Publisher's note (Englisch)
In:
Journal of electrostatics
;
31
, 2-3
; 365
;
1993
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Publisher's note
-
Erschienen in:Journal of electrostatics ; 31, 2-3 ; 365
-
Erscheinungsort:Amsterdam
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Erscheinungsdatum:1993
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ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 33.16 / 53.37 / 53.37 / 33.16
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 535/3435
-
Schlagwörter:
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Klassifikation:
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Datenquelle:
Inhaltsverzeichnis – Band 31, Ausgabe 2-3
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Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 79
-
A newly observed high frequency effect on the ESD protection utilized in a gigahertz NMOS technologyWeston, H.T. / Lee, V.W. / Stanik, T.D. et al. | 1993
- 91
-
Latent damage and parametric drift in electrostatically damaged MOS transistorsTunnicliffe, M.J. / Dwyer, V.M. / Campbell, D.S. et al. | 1993
- 111
-
ESD protection in a 3.3 V sub-micron silicided CMOS technologyKrakauer, David et al. | 1993
- 131
-
Annealing of ESD-induced damage in power MOSFETsZupac, D. / Pote, D. / Schrimpf, R.D. / Galloway, K.F. et al. | 1993
- 145
-
An investigation of BiCMOS ESD protection circuit elements and applications in submicron technologiesAmerasekera, Ajith / Chatterjee, Amitava et al. | 1993
- 161
-
Electrical overstress (EOS) power profiles: A guidline to qualify EOS hardness of semiconductor devicesDiiaz, C. et al. | 1993
- 161
-
Electrical overstress (EOS) power profiles: A guideline to qualify EOS hardness of semiconductor devicesDíaz, Carlos / Kang, Sung-Mo / Duvvury, Charvaka / Wagner, Larry et al. | 1993
- 177
-
On clip ESD protection using SCR pairsCroft, G.D. et al. | 1993
- 177
-
On chip ESD protection using SCR pairsCroft, Gregg D. et al. | 1993
- 199
-
From lightning to charged-device model electrostatic dischargesLin, Don L. / Welsher, Terry L. et al. | 1993
- 215
-
Techniques and methodologies for making system level ESD response measurements for troubleshooting or design verificationSmith, Douglas C. et al. | 1993
- 237
-
Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitryVoldman, Steven H. / Gross, Vaughn P. / Hargrove, Michael J. / Never, James M. / Slinkman, James A. / P.O'Boyle, Martin / Scott, Tom S. / Delecki, Joseph J. et al. | 1993
- 237
-
Shallow trench isolation double-diode electrostatic discharge circuit and interaction with DRAM output circuitryVoldman, S.H. et al. | 1993
- 263
-
Fieldemitter-based ESD-protection circuits for high-frequency devices and IC'sBock, K. / Hartnagel, H.-L. et al. | 1993
- 281
-
Experimental study of unprotected MOS structures under EOS/ESD conditionsGreason, W.D. / Chum, K. et al. | 1993
- 301
-
A successful HBM ESD protection circuit for micron and sub-micron level CMOSCarbajal, Bernard G. III / Cline, Roger A. / Andersen, Bernhard H. et al. | 1993
- 313
-
Integrated circuit metal in the charged device model: bootstrap heating, melt damage, and scaling lawsMaloney, Timothy J. et al. | 1993
- 323
-
ESD induced gate oxide damage during wafer fabrication processKim, Sang U. et al. | 1993
- 339
-
The resistence phase of an air discharge and the formation of fast risetime ESD pulsesHyatt, H.M. et al. | 1993
- 339
-
The resistive phase of an air discharge and the formation of fast risetime ESD pulsesHyatt, Hugh M. et al. | 1993
- 357
-
Calender| 1993
- 357
-
Calendar| 1993
- 359
-
Author index volume 31| 1993
- 361
-
Contents volume 31| 1993
- 363
-
Subject index volume 31| 1993
- 364
-
Panel of referees| 1993
- 365
-
Publisher's note| 1993
- 365
-
Submission of manuscripts by diskette| 1993
- i
-
PrefaceDr. Greason, William D. / Eng, P. et al. | 1993