Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling (Englisch)
- Neue Suche nach: Zhang, C
- Neue Suche nach: Zhang, C
- Neue Suche nach: Li, L
In:
IEEE transactions on electron devices
;
58
, 2
; 279-288
;
2011
-
ISSN:
- Aufsatz (Zeitschrift) / Print
-
Titel:Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling
-
Beteiligte:
-
Erschienen in:IEEE transactions on electron devices ; 58, 2 ; 279-288
-
Verlag:
- Neue Suche nach: IEEE
-
Erscheinungsort:New York, NY
-
Erscheinungsdatum:2011
-
ISSN:
-
ZDBID:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Print
-
Sprache:Englisch
- Neue Suche nach: 53.50 / 53.00 / 52.50 / 54.20
- Weitere Informationen zu Basisklassifikation
- Neue Suche nach: 770/5670
-
Schlagwörter:
-
Klassifikation:
-
Datenquelle:
Inhaltsverzeichnis – Band 58, Ausgabe 2
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 279
-
Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical ModelingChunbo Zhang, / Leijun Li, et al. | 2011
- 279
-
Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical ModelingZhang, C et al. | 2011
- 288
-
A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage NodeSeongjae Cho, / Won Bo Shim, / Yoon Kim, / Jang-Gn Yun, / Jong Duk Lee, / Hyungcheol Shin, / Jong-Ho Lee, / Byung-Gook Park, et al. | 2011
- 296
-
Asymmetric Drain Spacer Extension (ADSE) FinFETs for Low-Power and Robust SRAMsGoel, A / Gupta, S K / Roy, K et al. | 2011
- 309
-
An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic BipolarChatterjee, A / Shrivastava, M / Gossner, H / Pendharkar, S / Brewer, F / Duvvury, C et al. | 2011
- 318
-
An Insight Into ESD Behavior of Nanometer-Scale Drain Extended NMOS (DeNMOS) Devices: Part II (Two-Dimensional Study-Biasing & Comparison With NMOS)Chatterjee, A / Shrivastava, M / Gossner, H / Pendharkar, S / Brewer, F / Duvvury, C et al. | 2011
- 327
-
Monte Carlo Simulation of Leakage Currents in Formula Not Shown CapacitorsJegert, G. / Kersch, A. / Weinreich, W. / Lugli, P. et al. | 2011
- 327
-
Monte Carlo Simulation of Leakage Currents in TiN/ZrO2/TiN CapacitorsJegert, G et al. | 2011
- 327
-
Monte Carlo Simulation of Leakage Currents in $ \hbox{TiN/ZrO}_{2}/\hbox{TiN}$ CapacitorsJegert, G / Kersch, A / Weinreich, W / Lugli, P et al. | 2011
- 335
-
Transistor Mismatch Properties in Deep-Submicrometer CMOS TechnologiesXiaobin Yuan, / Shimizu, T / Mahalingam, U / Brown, J S / Habib, K Z / Tekleab, D G / Tai-Chi Su, / Satadru, S / Olsen, C M / Hyunwoo Lee, et al. | 2011
- 343
-
DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit ConditionsLiquan Wang, / Figueiredo, J M L / Ironside, C N / Wasige, E et al. | 2011
- 348
-
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part I: TheoryHuszka, Zoltán / Céli, D / Seebacher, E et al. | 2011
- 357
-
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part II: Implementation, Parameter Extraction and VerificationHuszka, Z / Céli, Didier / Seebacher, E et al. | 2011
- 364
-
Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETsTsunomura, T / Nishida, A / Hiramoto, T et al. | 2011
- 370
-
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory ApplicationsMinghua Tang, / Xiaolei Xu, / Zhi Ye, / Sugiyama, Y / Ishiwara, H et al. | 2011
- 376
-
Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memoriesde Sousa, J S / Peibst, R / Erenburg, M / Bugiel, E / Farias, G A / Leburton, Jean-Pierre / Hofmann, K R et al. | 2011
- 384
-
On the High-Field Transport and Uniaxial Stress Effect in Ge PFETsKobayashi, M / Mitard, J / Irisawa, T / Hoffmann, T / Meuris, M / Saraswat, K / Nishi, Y / Heyns, M et al. | 2011
- 392
-
A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage VariationsPanagopoulos, G / Roy, K et al. | 2011
- 404
-
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect TransistorSaurabh, S / Kumar, M J et al. | 2011
- 411
-
Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLPPogany, D / Johnsson, D / Bychikhin, S / Esmark, K / Rodin, P / Stecher, M / Gornik, E / Gossner, H et al. | 2011
- 419
-
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold OperationVitale, S A / Kedzierski, J / Healey, P / Wyatt, P W / Keast, C L et al. | 2011
- 427
-
Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETsSung-Jin Choi, / Chel-Jong Choi, / Jee-Yeon Kim, / Moongyu Jang, / Yang-Kyu Choi, et al. | 2011
- 427
-
Analysis of Transconductanpe (gm) in Schottky-Barrier MOSFETsChoi, S-J et al. | 2011
- 427
-
Analysis of Transconductance Formula Not Shown in Schottky-Barrier MOSFETsChoi, S. J. / Choi, C. J. / Kim, J. Y. / Jang, M. / Choi, Y. K. et al. | 2011
- 433
-
Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETsIoannidis, E G / Tsormpatzoglou, A / Tassis, D H / Dimitriadis, C A / Ghibaudo, G / Jomaah, J et al. | 2011
- 441
-
Evaluating the Aluminum-Alloyed p+-Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, R et al. | 2011
- 441
-
Evaluating the Aluminum-Alloyed Formula Not Shown -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, R. / Gundel, P. / Krause, J. / Ruhle, K. / Heinz, F. D. / Rauer, M. / Schmiga, C. / Schubert, M. C. / Warta, W. / Biro, D. et al. | 2011
- 441
-
Evaluating the Aluminum-Alloyed $\hbox{p}^{+}$ -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, Robert / Gundel, Paul / Krause, Jonas / Rühle, Karola / Heinz, Friedemann D / Rauer, Michael / Schmiga, Christian / Schubert, Martin C / Warta, Wilhelm / Biro, Daniel et al. | 2011
- 448
-
A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETsXiaoxu Cheng, / Yan Wang, et al. | 2011
- 448
-
Compound Semiconductor Devices A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETsCheng, X et al. | 2011
- 455
-
Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)Mochizuki, K / Yokoyama, N et al. | 2011
- 460
-
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTsMaojun Wang, / Chen, K J et al. | 2011
- 466
-
Electrothermal Access Resistance Model for GaN-Based HEMTsThorsell, M / Andersson, K / Hjelmgren, H / Rorsman, N et al. | 2011
- 473
-
Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTsZhi Hong Liu, / Geok Ing Ng, / Arulkumaran, S / Ye Kyaw Thu Maung, / Khoon Leng Teo, / Siew Chuen Foo, / Sahmuganathan, V et al. | 2011
- 480
-
Thin Film Devices Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film TransistorsWang, Y et al. | 2011
- 480
-
Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film TransistorsYe Wang, / Xiao Wei Sun, / Goh, G K L / Demir, H V / Hong Yu Yu, et al. | 2011
- 486
-
Optoelectronics, Display, and Imaging InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 µmOng, D S G et al. | 2011
- 486
-
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 Formula Not ShownOng, D. S. / Ng, J. S. / Goh, Y. L. / Tan, C. H. / Zhang, S. / David, J. P. et al. | 2011
- 486
-
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 $\mu\hbox{m}$Ong, D S G / Jo Shien Ng, / Yu Ling Goh, / Chee Hing Tan, / Shiyong Zhang, / David, J P R et al. | 2011
- 490
-
Vertically Mounted InGaN-on-Sapphire Light-Emitting DiodesZhu, L / Ma, Z T / Lai, P T / Choi, H W et al. | 2011
- 495
-
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe TechniqueJin-Wei Shi, / Huang, H.-W / Kuo, F.-M / Lai, W.-C / Ming-Lun Lee, / Jinn-Kong Sheu, et al. | 2011
- 501
-
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and Formula Not Shown Heterojunction DetectorsItsuno, A. M. / Phillips, J. D. / Velicu, S. et al. | 2011
- 501
-
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and p-n Heterojunction DetectorsItsuno, A M et al. | 2011
- 501
-
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and $p\hbox{-}n$ Heterojunction DetectorsItsuno, A M / Phillips, J D / Velicu, S et al. | 2011
- 508
-
Solid-State Power and High Voltage Devices Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor SwitchJames, C et al. | 2011
- 508
-
Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor SwitchJames, C / Hettler, C / Dickens, J et al. | 2011
- 512
-
Solid-State Device Phenomena Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum ComputingHui, H T et al. | 2011
- 512
-
Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum ComputingHon Tat Hui, / Mirzaei, Hamidreza et al. | 2011
- 517
-
Experimental Analysis of Partial-SET State Stability in Phase-Change MemoriesBraga, S / Cabrini, A / Torelli, G et al. | 2011
- 523
-
Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect TransistorsChuan-Jia Xing, / Wen-Yan Yin, / Lei-Tao Liu, / Jun Huang, et al. | 2011
- 530
-
Stochastic Analysis and Design Guidelines for CNFETs in Gigascale Integrated SystemsZarkesh-Ha, P / Shahi, A A M et al. | 2011
- 540
-
CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and AnalysisYidong Liu, / Jiann-Shiun Yuan, et al. | 2011
- 547
-
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\hbox{SiO}_{2}$-Based Solid ElectrolyteJie Jiang, / Jia Sun, / Aixia Lu, / Qing Wan, et al. | 2011
- 547
-
Molecular and Organic Devices Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO2-Based Solid ElectrolyteJiang, J et al. | 2011
- 547
-
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by Formula Not Shown -Based Solid ElectrolyteJiang, J. / Sun, J. / Lu, A. / Wan, Q. et al. | 2011
- 553
-
Oscillation Frequency of a Reflex-Triode Virtual Cathode OscillatorRoy, A / Sharma, A / Mitra, S / Menon, R / Sharma, V / Nagesh, K V / Chakravarthy, D P et al. | 2011
- 553
-
Vaccum Electron Devices Oscillation Frequency of a Reflex-Triode Virtual Cathode OscillatorRoy, A et al. | 2011
- 562
-
BRIEFS Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated HfO2 Gate-Oxide n-MOS DevicesLee, T et al. | 2011
- 562
-
Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated Formula Not Shown Gate-Oxide n-MOS DevicesLee, T. / Banerjee, S. K. et al. | 2011
- 562
-
Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS DevicesTackhwi Lee, / Banerjee, S K et al. | 2011
- 567
-
A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped ChargesTe-Kuang Chiang, et al. | 2011
- 572
-
Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film ResistorsBoulais, E / Fantoni, J / Chateauneuf, A / Savaria, Y / Meunier, M et al. | 2011
- 576
-
Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge StructuresLiu, H G / Chang, H D / Sun, B et al. | 2011
- 579
-
Materials processing and reliability of 3D interconnects| 2011
- 579
-
ANNOUNCEMENTS Call for Papers — Special Issue of IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Materials, Processing and Reliability of 3D Interconnects| 2011
- C1
-
Table of contents| 2011
- C2
-
IEEE Transactions on Electron Devices publication information| 2011
- C3
-
IEEE Transactions on Electron Devices information for authors| 2011
-
Blank page| 2011