Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling (English)
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IEEE transactions on electron devices
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58
, 2
; 279-288
;
2011
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ISSN:
- Article (Journal) / Print
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Title:Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling
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Published in:IEEE transactions on electron devices ; 58, 2 ; 279-288
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- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2011
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 58, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 279
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Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical ModelingChunbo Zhang, / Leijun Li, et al. | 2011
- 279
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Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical ModelingZhang, C et al. | 2011
- 288
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A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage NodeSeongjae Cho, / Won Bo Shim, / Yoon Kim, / Jang-Gn Yun, / Jong Duk Lee, / Hyungcheol Shin, / Jong-Ho Lee, / Byung-Gook Park, et al. | 2011
- 296
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Asymmetric Drain Spacer Extension (ADSE) FinFETs for Low-Power and Robust SRAMsGoel, A / Gupta, S K / Roy, K et al. | 2011
- 309
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An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic BipolarChatterjee, A / Shrivastava, M / Gossner, H / Pendharkar, S / Brewer, F / Duvvury, C et al. | 2011
- 318
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An Insight Into ESD Behavior of Nanometer-Scale Drain Extended NMOS (DeNMOS) Devices: Part II (Two-Dimensional Study-Biasing & Comparison With NMOS)Chatterjee, A / Shrivastava, M / Gossner, H / Pendharkar, S / Brewer, F / Duvvury, C et al. | 2011
- 327
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Monte Carlo Simulation of Leakage Currents in Formula Not Shown CapacitorsJegert, G. / Kersch, A. / Weinreich, W. / Lugli, P. et al. | 2011
- 327
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Monte Carlo Simulation of Leakage Currents in TiN/ZrO2/TiN CapacitorsJegert, G et al. | 2011
- 327
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Monte Carlo Simulation of Leakage Currents in $ \hbox{TiN/ZrO}_{2}/\hbox{TiN}$ CapacitorsJegert, G / Kersch, A / Weinreich, W / Lugli, P et al. | 2011
- 335
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Transistor Mismatch Properties in Deep-Submicrometer CMOS TechnologiesXiaobin Yuan, / Shimizu, T / Mahalingam, U / Brown, J S / Habib, K Z / Tekleab, D G / Tai-Chi Su, / Satadru, S / Olsen, C M / Hyunwoo Lee, et al. | 2011
- 343
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DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit ConditionsLiquan Wang, / Figueiredo, J M L / Ironside, C N / Wasige, E et al. | 2011
- 348
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A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part I: TheoryHuszka, Zoltán / Céli, D / Seebacher, E et al. | 2011
- 357
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A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part II: Implementation, Parameter Extraction and VerificationHuszka, Z / Céli, Didier / Seebacher, E et al. | 2011
- 364
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Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETsTsunomura, T / Nishida, A / Hiramoto, T et al. | 2011
- 370
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Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory ApplicationsMinghua Tang, / Xiaolei Xu, / Zhi Ye, / Sugiyama, Y / Ishiwara, H et al. | 2011
- 376
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Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memoriesde Sousa, J S / Peibst, R / Erenburg, M / Bugiel, E / Farias, G A / Leburton, Jean-Pierre / Hofmann, K R et al. | 2011
- 384
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On the High-Field Transport and Uniaxial Stress Effect in Ge PFETsKobayashi, M / Mitard, J / Irisawa, T / Hoffmann, T / Meuris, M / Saraswat, K / Nishi, Y / Heyns, M et al. | 2011
- 392
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A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage VariationsPanagopoulos, G / Roy, K et al. | 2011
- 404
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Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect TransistorSaurabh, S / Kumar, M J et al. | 2011
- 411
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Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLPPogany, D / Johnsson, D / Bychikhin, S / Esmark, K / Rodin, P / Stecher, M / Gornik, E / Gossner, H et al. | 2011
- 419
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Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold OperationVitale, S A / Kedzierski, J / Healey, P / Wyatt, P W / Keast, C L et al. | 2011
- 427
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Analysis of Transconductance Formula Not Shown in Schottky-Barrier MOSFETsChoi, S. J. / Choi, C. J. / Kim, J. Y. / Jang, M. / Choi, Y. K. et al. | 2011
- 427
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Analysis of Transconductanpe (gm) in Schottky-Barrier MOSFETsChoi, S-J et al. | 2011
- 427
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Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETsSung-Jin Choi, / Chel-Jong Choi, / Jee-Yeon Kim, / Moongyu Jang, / Yang-Kyu Choi, et al. | 2011
- 433
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Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETsIoannidis, E G / Tsormpatzoglou, A / Tassis, D H / Dimitriadis, C A / Ghibaudo, G / Jomaah, J et al. | 2011
- 441
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Evaluating the Aluminum-Alloyed p+-Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, R et al. | 2011
- 441
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Evaluating the Aluminum-Alloyed Formula Not Shown -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, R. / Gundel, P. / Krause, J. / Ruhle, K. / Heinz, F. D. / Rauer, M. / Schmiga, C. / Schubert, M. C. / Warta, W. / Biro, D. et al. | 2011
- 441
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Evaluating the Aluminum-Alloyed $\hbox{p}^{+}$ -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy MeasurementsWoehl, Robert / Gundel, Paul / Krause, Jonas / Rühle, Karola / Heinz, Friedemann D / Rauer, Michael / Schmiga, Christian / Schubert, Martin C / Warta, Wilhelm / Biro, Daniel et al. | 2011
- 448
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A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETsXiaoxu Cheng, / Yan Wang, et al. | 2011
- 448
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Compound Semiconductor Devices A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETsCheng, X et al. | 2011
- 455
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Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)Mochizuki, K / Yokoyama, N et al. | 2011
- 460
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Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTsMaojun Wang, / Chen, K J et al. | 2011
- 466
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Electrothermal Access Resistance Model for GaN-Based HEMTsThorsell, M / Andersson, K / Hjelmgren, H / Rorsman, N et al. | 2011
- 473
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Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTsZhi Hong Liu, / Geok Ing Ng, / Arulkumaran, S / Ye Kyaw Thu Maung, / Khoon Leng Teo, / Siew Chuen Foo, / Sahmuganathan, V et al. | 2011
- 480
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Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film TransistorsYe Wang, / Xiao Wei Sun, / Goh, G K L / Demir, H V / Hong Yu Yu, et al. | 2011
- 480
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Thin Film Devices Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film TransistorsWang, Y et al. | 2011
- 486
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Optoelectronics, Display, and Imaging InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 µmOng, D S G et al. | 2011
- 486
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InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 Formula Not ShownOng, D. S. / Ng, J. S. / Goh, Y. L. / Tan, C. H. / Zhang, S. / David, J. P. et al. | 2011
- 486
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InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 $\mu\hbox{m}$Ong, D S G / Jo Shien Ng, / Yu Ling Goh, / Chee Hing Tan, / Shiyong Zhang, / David, J P R et al. | 2011
- 490
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Vertically Mounted InGaN-on-Sapphire Light-Emitting DiodesZhu, L / Ma, Z T / Lai, P T / Choi, H W et al. | 2011
- 495
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Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe TechniqueJin-Wei Shi, / Huang, H.-W / Kuo, F.-M / Lai, W.-C / Ming-Lun Lee, / Jinn-Kong Sheu, et al. | 2011
- 501
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Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and Formula Not Shown Heterojunction DetectorsItsuno, A. M. / Phillips, J. D. / Velicu, S. et al. | 2011
- 501
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Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and p-n Heterojunction DetectorsItsuno, A M et al. | 2011
- 501
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Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and $p\hbox{-}n$ Heterojunction DetectorsItsuno, A M / Phillips, J D / Velicu, S et al. | 2011
- 508
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Solid-State Power and High Voltage Devices Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor SwitchJames, C et al. | 2011
- 508
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Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor SwitchJames, C / Hettler, C / Dickens, J et al. | 2011
- 512
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Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum ComputingHon Tat Hui, / Mirzaei, Hamidreza et al. | 2011
- 512
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Solid-State Device Phenomena Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum ComputingHui, H T et al. | 2011
- 517
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Experimental Analysis of Partial-SET State Stability in Phase-Change MemoriesBraga, S / Cabrini, A / Torelli, G et al. | 2011
- 523
-
Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect TransistorsChuan-Jia Xing, / Wen-Yan Yin, / Lei-Tao Liu, / Jun Huang, et al. | 2011
- 530
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Stochastic Analysis and Design Guidelines for CNFETs in Gigascale Integrated SystemsZarkesh-Ha, P / Shahi, A A M et al. | 2011
- 540
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CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and AnalysisYidong Liu, / Jiann-Shiun Yuan, et al. | 2011
- 547
-
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\hbox{SiO}_{2}$-Based Solid ElectrolyteJie Jiang, / Jia Sun, / Aixia Lu, / Qing Wan, et al. | 2011
- 547
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Molecular and Organic Devices Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO2-Based Solid ElectrolyteJiang, J et al. | 2011
- 547
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Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by Formula Not Shown -Based Solid ElectrolyteJiang, J. / Sun, J. / Lu, A. / Wan, Q. et al. | 2011
- 553
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Oscillation Frequency of a Reflex-Triode Virtual Cathode OscillatorRoy, A / Sharma, A / Mitra, S / Menon, R / Sharma, V / Nagesh, K V / Chakravarthy, D P et al. | 2011
- 553
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Vaccum Electron Devices Oscillation Frequency of a Reflex-Triode Virtual Cathode OscillatorRoy, A et al. | 2011
- 562
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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated Formula Not Shown Gate-Oxide n-MOS DevicesLee, T. / Banerjee, S. K. et al. | 2011
- 562
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BRIEFS Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated HfO2 Gate-Oxide n-MOS DevicesLee, T et al. | 2011
- 562
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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS DevicesTackhwi Lee, / Banerjee, S K et al. | 2011
- 567
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A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped ChargesTe-Kuang Chiang, et al. | 2011
- 572
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Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film ResistorsBoulais, E / Fantoni, J / Chateauneuf, A / Savaria, Y / Meunier, M et al. | 2011
- 576
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Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge StructuresLiu, H G / Chang, H D / Sun, B et al. | 2011
- 579
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Materials processing and reliability of 3D interconnects| 2011
- 579
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ANNOUNCEMENTS Call for Papers — Special Issue of IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Materials, Processing and Reliability of 3D Interconnects| 2011
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