Strained Ge and Ge1-xSnx Technology for Future CMOS Devices (Englisch)
Nationallizenz
- Neue Suche nach: Nakatsuka, Osamu
- Neue Suche nach: Takeuchi, Shotaro
- Neue Suche nach: Shimura, Yosuke
- Neue Suche nach: Sakai, Akira
- Neue Suche nach: Zaima, Shigeaki
In:
Key Engineering Materials
;
470
;
146-151
;
2011
- Aufsatz (Zeitschrift) / Elektronische Ressource
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Titel:Strained Ge and Ge1-xSnx Technology for Future CMOS Devices
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Beteiligte:
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Erschienen in:Key Engineering Materials ; 470 ; 146-151
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Verlag:
- Neue Suche nach: Trans Tech Publications
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Erscheinungsort:Stafa-Zurich, Switzerland
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Erscheinungsdatum:21.02.2011
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Format / Umfang:6 pages
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ISSN:
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DOI:
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Medientyp:Aufsatz (Zeitschrift)
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Format:Elektronische Ressource
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Sprache:Englisch
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Schlagwörter:
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Datenquelle:
Inhaltsverzeichnis – Band 470
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- 1
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High Mobility Ge-Based CMOS Device Technologies| 2011
- -3
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Preface, Sponsors and Committees| 2011
- 8
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SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator| 2011
- 14
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Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices| 2011
- 20
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Functional Device Applications of Nanosilicon| 2011
- 27
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Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs| 2011
- 33
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KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel| 2011
- 39
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Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures| 2011
- 43
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Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact| 2011
- 48
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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure| 2011
- 54
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Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions| 2011
- 60
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First-Principles Calculations of the Dielectric Constant for the GeO2 Films| 2011
- 66
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Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory| 2011
- 72
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Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors| 2011
- 79
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Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator| 2011
- 85
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Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering| 2011
- 92
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Resistive Memory Utilizing Ferritin Protein with Nano Particle| 2011
- 98
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Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation| 2011
- 104
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Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction| 2011
- 110
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Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface| 2011
- 117
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Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process| 2011
- 123
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Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation| 2011
- 129
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Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction| 2011
- 135
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Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures| 2011
- 140
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Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application| 2011
- 146
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Strained Ge and Ge1-xSnx Technology for Future CMOS Devices| 2011
- 152
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Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)| 2011
- 158
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Structural Change during the Formation of Directly Bonded Silicon Substrates| 2011
- 164
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Microscopic Structure of Directly Bonded Silicon Substrates| 2011
- 171
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Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains| 2011
- 175
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Si Nanodot Device Fabricated by Thermal Oxidation and their Applications| 2011
- 184
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Influences of Carrier Transport on Drain-Current Variability of MOSFETs| 2011
- 188
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Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers| 2011
- 194
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Analysis of Threshold Voltage Variations in Fin Field Effect Transistors| 2011
- 201
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Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs| 2011
- 207
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Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction| 2011
- 214
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Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs| 2011
- 218
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Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors| 2011
- 224
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Interconnect Design Challenges in Nano CMOS Circuit| 2011