Erscheinungsjahr
Medientyp
Format
Lizenz
Sprache
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Silicon Devices - Effect of the Gap Size on the SSI Efficiency of Split-Gate Memory Cells
Online Contents | 2006| -
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation
Online Contents | 2005| -
Reproducing capacitive cyclic voltammetric curves by simulation: When are simplified geometries appropriate?
Freier ZugriffBASE | 2022|Beteiligte: Palestri, P -
Silicon Devices - A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
Online Contents | 2003| -
LETTERS - Silicon Alloys and Thin Film - Monte Carlo Simulation of Impact Ionization in SiGe HBTs
Online Contents | 2001| -
Theory of the motion at the band crossing points in bulk semiconductor crystals and in inversion layers (11 pages)
British Library Online Contents | 2009| -
General model and equivalent circuit for the chemical noise spectrum associated to surface charge fluctuation in potentiometric sensors
Freier ZugriffBASE | 2020|Beteiligte: Palestri, P. -
Non-local microscopic view of signal propagation times in BJTs biased up to high currents
Online Contents | 2001| -
Modeling, simulation and design of the vertical Graphene Base Transistor
British Library Online Contents | 2013| -
Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices (14 pages)
British Library Online Contents | 2005| -
Full Band and Approximated Solutions of the Schrodinger Equation in Silicon Inversion Layers
British Library Conference Proceedings | 2004| -
Fullband Quantization Analysis Reveals a Third Valley in (001) Silicon Inversion Layers
British Library Online Contents | 2005| -
Accurate Nonlocal Impact Ionization Models for Conventional and Staircase Avalanche Photodiodes Derived by Full Band Monte Carlo Transport Simulations
Freier ZugriffBASE | 2022|Beteiligte: Palestri, P. -
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs
British Library Online Contents | 2010| -
Impact of carrier heating on backscattering in inversion layers
NationallizenzAmerican Institute of Physics | 2011| -
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)
British Library Online Contents | 2015| -
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal-oxide-semiconductor transistors (13 pages)
British Library Online Contents | 2014| -
Non-local microscopic view of signal propagation times in BJTs biased up to high currents
British Library Online Contents | 2001| -
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs
British Library Online Contents | 2007| -
Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects
Freier ZugriffIEEE | 2024| -
An Improved Semi-Classical Model to Investigate Tunnel-FET Performance
British Library Conference Proceedings | 2013| -
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III-V channel materials
British Library Online Contents | 2013|
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