Amorphous and quasicrystalline AlMn and AlFe phase synthesis by ion beam mixing and related transport properties (Englisch)
Nationallizenz
- Neue Suche nach: Plenet, J.C.
- Neue Suche nach: Perez, A.
- Neue Suche nach: Rivory, J.
- Neue Suche nach: Laborde, O.
- Neue Suche nach: Plenet, J.C.
- Neue Suche nach: Perez, A.
- Neue Suche nach: Rivory, J.
- Neue Suche nach: Laborde, O.
In:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
;
80-81
;
379-385
;
1993
-
ISSN:
- Aufsatz (Zeitschrift) / Elektronische Ressource
-
Titel:Amorphous and quasicrystalline AlMn and AlFe phase synthesis by ion beam mixing and related transport properties
-
Beteiligte:Plenet, J.C. ( Autor:in ) / Perez, A. ( Autor:in ) / Rivory, J. ( Autor:in ) / Laborde, O. ( Autor:in )
-
Erschienen in:
-
Verlag:
-
Erscheinungsdatum:01.01.1993
-
Format / Umfang:7 pages
-
ISSN:
-
DOI:
-
Medientyp:Aufsatz (Zeitschrift)
-
Format:Elektronische Ressource
-
Sprache:Englisch
-
Datenquelle:
Inhaltsverzeichnis – Band 80-81
Zeige alle Jahrgänge und Ausgaben
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
- 3
-
Influence of ionization processes on radiation defect formationAscheron, C. / Biersack, J.P. / Goppelt-Langer, P. / Erxmeyer, J. et al. | 1993
- 7
-
Solid effect on the electronic stopping and application to range estimationNakagawa, S.T. et al. | 1993
- 12
-
The effect of high charge states on the stopping and ranges of ions in solidsBiersack, J.P. et al. | 1993
- 16
-
Numerical evaluation of the electronic stopping power for heavy ions in solidsYou-Nian Wang / Teng-Cai Ma et al. | 1993
- 20
-
Chemical bond effects on the low-energy electronic stopping power of Li and He ions on saturated alcohols, ethers and aminesSoullard, J. / Cruz, S.A. / Cabrera-Trujillo, R. et al. | 1993
- 24
-
Double scattering in elastic recoil spectraRepplinger, F. / Stoquert, J.P. / Siffert, P. et al. | 1993
- 28
-
Computer simulation of channeling implantation at high and medium energiesPosselt, M. et al. | 1993
- 33
-
Energy loss and equilibrium charge distribution of nitrogen ions transmitted through thin silicon crystalsBentini, G.G. / Bianconi, M. / Nipoti, R. et al. | 1993
- 37
-
Energy loss and straggling of MeV 4He ions in a Si/Sb multilayer targetNiemann, D. / Oberschachtsiek, P. / Kalbitzer, S. / Zeindl, H.P. et al. | 1993
- 41
-
Electronic stopping of hydrogen ions in graphite and amorphous carbonNečas, Vladimír / Käferböck, Wolfgang / Rössler, Wolfgang / Bauer, Peter et al. | 1993
- 45
-
Kinetic approach to multiple scattering of heavy ions in the channeling regimeMuralev, V.A. et al. | 1993
- 49
-
Shell effects observed in exit charge state distribution of 1–30 keV atomic projectiles transiting ultrathin carbon foilsFunsten, H.O. / Barraclough, B.L. / McComas, D.J. et al. | 1993
- 49
-
Shell effects observed in exit charge state distributions of 1-30 keV atomic projectiles transiting ultrathin carbon foilsFunsten, H. O. / Barraclough, B. L. / McComas, D. J. et al. | 1993
- 53
-
Range parameters of Au and Cs implanted into BN and SiC filmsFichtner, P.F.P. / Herberts, M.R. / Grande, P.L. / Behar, M. / Fink, D. / Zawislak, F.C. et al. | 1993
- 58
-
Channeling effects in high energy ion implantation: Si(N)Berti, M. / Brusatin, G. / Carnera, A. / Gasparotto, A. / Fabbri, R. et al. | 1993
- 62
-
Range measurement of boron isotopes in silicon from 600 keV to 2 MeVGoppelt, P. / Biersack, J.P. / Gebauer, B. / Fink, D. / Bohne, W. / Wilpert, M. / Wilpert, Th. et al. | 1993
- 65
-
Electronic stopping effects in Fe60Co40 films irradiated with high energy ionsRivière, J.P. / Dinhut, J.F. / Paumier, E. / Dural, J. et al. | 1993
- 73
-
Collision cascades in Zr3FeHowe, L.M. / Rainville, M.H. / Phillips, D. / Plattner, H. / Bonnett, J.D. et al. | 1993
- 80
-
Valence and conduction band electronic distributions in ion beam prepared samplesBelin, Esther / Traverse, Agnès / Sonder, Albert et al. | 1993
- 86
-
Radiation-induced disordering and defect production in Cu3Au and Ni3Al studied by molecular dynamics simulationde la Rubia, T.Diaz / Caro, A. / Spaczer, M. / Janaway, G.A. / Guinan, M.W. / Victoria, M. et al. | 1993
- 91
-
An ion beam mixing model for compound formation: the case of Pd/SiDesimoni, Judith / Traverse, Agnès et al. | 1993
- 94
-
Simulation of ion sputtering of rotating amorphous or polycrystalline solidsWege, S. / Bautsch, M. / Rübesame, D. / Niedrig, H. / Wittich, T. et al. | 1993
- 98
-
On the efficiency of deposited energy density for ion beam mixing processes with ions implanted during and after thin metal film depositionTashlykov, I.S. / Belyi, I.M. / Bobrovich, O.G. / Kalbitzer, S. / Meyer, O. / Wolf, G.K. / Enders, B. et al. | 1993
- 102
-
Instability of homogeneous distribution of radiation defects in metals in the case of heavily fluctuating defect productionDevyatko, Yu.N. / Makletsov, A.A. / Tronin, V.N. et al. | 1993
- 106
-
Defect distributions in MeV ion bombarded siliconHallén, Anders / Svensson, Bengt G. et al. | 1993
- 110
-
Fluence dependent concentration of low-energy Ga implanted in SiGnaser, H. / Steltmann, J. / Oechsner, H. et al. | 1993
- 115
-
Self-organizing processes in metals by low-energy ion beamsTereshko, I.V. / Khodyrev, V.I. / Tereshko, V.M. / Lipsky, E.A. / Goncharenya, A.V. / Ofori-Sey, S. et al. | 1993
- 120
-
Ion-beam induced atomic transport at the Sb/Ni interfaceShi, F. / Weber, Th. / Bolse, W. / Lieb, K.P. et al. | 1993
- 124
-
Ion monitoring of ion beam dynamic mixing processChayahara, Akiyoshi / Kiuchi, Masato / Mokuno, Yoshiaki / Horino, Yuji / Kanenaga, Fujii / Satou, Mamoru et al. | 1993
- 128
-
Damage profiles in MgO single crystals after krypton implantationFriedland, E. et al. | 1993
- 132
-
Giant radiation damage produced by the impact of heavy molecular onto silicon single crystalCerofolini, G. F. / Bertoni, S. / Meda, L. / Balboni, R. et al. | 1993
- 132
-
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystalCerofolini, G.F. / Bertoni, S. / Meda, L. / Balboni, R. / Corni, F. / Frabboni, S. / Ottaviani, G. / Tonini, R. / Foglio Para, A. et al. | 1993
- 137
-
A refined model of the interface mixing in local thermal spikesBolse, Wolfgang et al. | 1993
- 142
-
Investigation of thin films by high-energy ERDAGoppelt, P. / Biersack, J.P. / Gebauer, B. / Fink, D. / Bohne, W. / Wilpert, M. / Wilpert, Th. et al. | 1993
- 146
-
Time and energy dependent recoil distributions in mixturesWayne Brasure, L. / Prinja, Anil K. et al. | 1993
- 151
-
The ultimate depth resolution in SIMS profiling: low-energy ion beam mixing of AuPt interfaceLikonen, J. / Hautala, M. / Koponen, I. et al. | 1993
- 159
-
Atomic transport in ion mixed Pd/Co bilayerChae, K.H. / Jang, H.G. / Song, J.H. / Woo, J.J. / Choi, B.S. / Jeong, K. / Whang, C.N. et al. | 1993
- 163
-
Ion beam mixing of isotopic silver bilayers by 200 keV germaniumKing, B.V. / Jeynes, C. / Webb, R.P. / Kilner, J.A. et al. | 1993
- 163
-
Ion beam mixing isotopic silver bilayers by 200 keV germaniumKing, B. V. / Jeynes, C. / Webb, R. P. / Kilner, J. A. et al. | 1993
- 167
-
Ion beam mixing of ceramic/metal interfacesCorts, T. / Traverse, A. / Bolse, W. et al. | 1993
- 172
-
Computer simulation of point-defect distributions generated by ion implantationJaraíz, M. / Arias, J. / Rubio, J.E. / Bailón, L.A. / Barbolla, J. et al. | 1993
- 176
-
Lattice location and annealing studies of heavy ion implanted diamondHofsäss, H. / Restle, M. / Wahl, U. / Recknagel, E. et al. | 1993
- 180
-
Lattice location of Er in GaAs and Al0.5Ga0.5As layers grown by MBE on (100) GaAs substratesAlves, E. / da Silva, M.F. / Evans, K.R. / Jones, C.R. / Melo, A.A. / Soares, J.C. et al. | 1993
- 184
-
Mercury implanted into aluminium: temperature and concentration dependence of the substitutional componentKhubeis, I. / Meyer, O. et al. | 1993
- 188
-
Lattice location and migration of lead in ironJagielski, Jacek / Turos, Andrzej et al. | 1993
- 192
-
Lattice site occupation of iodine implanted into aluminiumHauser, T. / Gerber, R. / Xiong, G.C. / Strehlau, B. / Meyer, O. et al. | 1993
- 196
-
Lattice location of implanted fluorine in diamondSmallman, C.G. / Fearick, R.W. / Derry, T.E. et al. | 1993
- 201
-
β-NMR of 12B in Si: a low-dose implantation studyFischer, B. / Seelinger, W. / Frank, H.-P. / Diehl, E. / Ergezinger, K.-H. / Ittermann, B. / Mai, F. / Marbach, K. / Weissenmayer, S. / Welker, G. et al. | 1993
- 207
-
Recent advances in ion beam modification of metalsSmidt, F.A. / Hubler, G.K. et al. | 1993
- 217
-
Microscopic characteristics and electrochemical properties of carbon-implanted steels in a non-aqueous acetic acid mediumUeda, Yasuhiko / Sekiguchi, Atsushi / Yuasa, Makoto / Sekine, Isao / Fujihana, Takanobu / Takahashi, Katsuo / Iwaki, Masaya et al. | 1993
- 221
-
Effect of Mg segregation at grain boundaries on corrosion behavior of intermetallic compound Ni3Al(B)Liu Xianghuai / Jian Binyao / Wang Xi / Yang Genqing / Zou Shichang / Sun Jian / Schroer, A. / Ensinger, W. / Wolf, G.K. / Kalbitzer, S. et al. | 1993
- 225
-
Wear resistance of boron nitride coated metalAndoh, Yasunori / Nishiyama, Satoshi / Sakai, Shigeki / Ogata, Kiyoshi / Fujimoto, Fuminori et al. | 1993
- 229
-
Study of surface modification of WCCo alloy by nitrogen implantationShi, W.D. / Wen, X.Y. / Liu, J.H. / Ren, C.S. / Long, Z.H. / Zhang, G.B. / Gong, Z.X. / Wang, Y.N. / Zhang, T. et al. | 1993
- 233
-
Improvement in wear characteristics of steel tools by metal ion implantationRück, D.M. / Boos, D. / Brown, I.G. et al. | 1993
- 237
-
Metallurgical study on hardness distribution by high energy ion implantation taking notice of solid-solubilityHigeta, K. / Yoshida, Y. / Sato, M. / Motonami, Y. / Kumagai, M. / Saito, H. / Satou, M. et al. | 1993
- 242
-
Pulsed ion sources for surface modification of materialsKorenev, S. et al. | 1993
- 246
-
Improvement of rolling contact fatigue life of ion implanted M50 steelTorp, B. / Nielsen, B.R. / Dodd, A. / Kinder, J. / Rangel, C.M. / DaSilva, M.F. / Courage, B. et al. | 1993
- 250
-
Characteristics of the nitrogen ion implanted intermetallic compound TiAlXi, Wang / Yunjie, Yang / Xianghuai, Liu / Shichang, Zou / Tanaguchi, Shigeji / Takahashi, Katsuo / Iwaki, Masaya et al. | 1993
- 254
-
Effects of implantation treatments on micromechanical properties of M2 steelAlonso, F. / Viviente, J.L. / Oñate, J.I. / Torp, B. / Nielsen, B.R. et al. | 1993
- 258
-
Depth profiles of C, N and O on carbon coated steel surfaces made by IBADKolitsch, A. / Hentschel, E. / Richter, E. et al. | 1993
- 262
-
A comparison of plasma immersion ion implantation with conventional ion implantationKenny, M.J. / Wielunski, L.S. / Tendys, J. / Collins, G.A. et al. | 1993
- 267
-
The pitting corrosion behavior of aluminum ion implanted with titaniumYao, X.Y. / Kumai, C.S. / Devine, T.M. / Fojas, P.B. / Ivanov, I.C. / Yu, K.-M. / Brown, I.G. et al. | 1993
- 271
-
Improvement of physical and chemical properties of steel implanted with Cr+, Ti+, Si+ ionsTashlykov, I.S. / Belyi, I.M. / Bobrovich, O.G. / Tuljev, V.V. / Shadruchin, M.G. / Kolotyrkin, V.I. / Tomashpolskii, M.Yu. / Kulikauskas, V.S. et al. | 1993
- 275
-
Electrochemical absorption of hydrogen into N+, O+ and Ar+ implanted palladium electrodesTakahashi, Katsuo / Ueshima, Masato / Iwaki, Masaya et al. | 1993
- 279
-
Electrochemical behavior of titanium implanted with nickel and tantalum ionsSugizaki, Y. / Yasunaga, T. / Saton, H. et al. | 1993
- 285
-
Aqueous corrosion of ion beam mixed Ta films on 13% chromium steelHuang, N.K. et al. | 1993
- 289
-
High temperature oxidation of ion implanted 2011 aluminum alloyChu, J.W. / Dytlewski, N. / Evans, P.J. / Sood, D.K. et al. | 1993
- 289
-
High temperature oxidation of ion implanted 2011 aluminium alloyChu, J. W. / Dytlewski, N. / Evans, P. J. / Sood, D. K. et al. | 1993
- 294
-
Ion implantation of Raney copper catalystsDurbach, S. / Mellor, J. / Coville, N.J. / Derry, T.E. et al. | 1993
- 297
-
The effects of Ti implantation on corrosion and adhesion of TiN coated stainless steelBaba, K. / Nagata, S. / Hatada, R. / Daikoku, T. / Hasaka, M. et al. | 1993
- 303
-
Phase formation in iron after high-fluence ion implantationRauschenbach, Bernd et al. | 1993
- 309
-
CEMS study of 57Fe implantation in nickelMarest, G. / Parellada, J. / Principi, G. / Tosello, C. et al. | 1993
- 313
-
Modification of the thermal behavior of iron-carbonitrides induced by Kr bombardment on nitrogen-implanted low carbon steelFoerster, C.E. / Amaral, L. / Moncoffre, N. / Behar, M. et al. | 1993
- 317
-
Evolution of lead precipitates in ion implanted aluminiumBourdelle, K.K. / Johansen, A. / Schmidt, B. / Andersen, H.H. / Johnson, E. / Sarholt-Kristensen, L. / Steenstrup, S. / Yu, L. et al. | 1993
- 323
-
Investigation of buried AlN layers formed by nitrogen implantation into AlLin, C. / Kilner, J.A. / Chater, R.J. / Li, J. / Nejim, A. / Zhang, J.P. / Hemment, P.L.F. et al. | 1993
- 323
-
Investigation of buried AIN layers formed by nitrogen implantation into AlLin, C. / Li, Y. / Kilner, J. A. / Chater, R. J. et al. | 1993
- 327
-
Enhanced stability of nitrides in α-Fe co-implanted with Cr + N or Al + NKopcewicz, M. / Jagielski, J. / Turos, A. / Gawlik, G. et al. | 1993
- 332
-
Formation of metastable carbide and fractal structure in Co thin films by carbon ion implantationLiu, B.X. / Tao, K. et al. | 1993
- 336
-
Characteristics of tool steel implanted with multi-energy B+ and single-energy N2 + ionsOhtani, S. / Mizutani, Y. / Takagi, T. et al. | 1993
- 340
-
Microstructure and tribology of nitrogen implanted molybdenum and tungstenPalmetshofer, L. / Rödhamner, P. et al. | 1993
- 344
-
Introduction of nitrogen into metals by high intensity pulsed ion beamsPiekoszewski, J. / Langner, J. / Białoskórski, J. / Kozłowska, B. / Pochrybniak, C. / Werner, Z. / Kopcewicz, M. / Waliś, L. / Ciurapiński, A. et al. | 1993
- 348
-
High dose implantation of aluminium into ironReuther, H. / Nikolov, O. / Kruijer, S. / Brand, R.A. / Keune, W. et al. | 1993
- 352
-
An investigation of phase formation by high dose silicon ion implantation into nickelRao, Z. / Williams, J.S. / Pogany, A.P. / Sood, D.K. et al. | 1993
- 357
-
Aggregation of iron implants in silverMarest, G. / Jaffrezic, H. / Stanek, J. / Bińczycka, H. et al. | 1993
- 363
-
The prediction of phases in ion beam mixed multilayersBaumvol, I.J.R. et al. | 1993
- 370
-
Amorphization of metallic alloys by ion bombardmentZiemann, P. / Miehle, W. / Plewnia, A. et al. | 1993
- 379
-
Amorphous and quasicrystalline AlMn and AlFe phase synthesis by ion beam mixing and related transport propertiesPlenet, J.C. / Perez, A. / Rivory, J. / Laborde, O. et al. | 1993
- 386
-
In situ TEM study of ion induced amorphization at low temperature in Al3TiJaouen, C. / Denanot, M.F. / Rivière, J.P. / Ruault, M.O. / Salomé, M. et al. | 1993
- 390
-
On the phase formation during ion beam mixing of Al-TiKyllesbech Larsen, K. / Skovmand, S. / Karpe, N. / Bøttiger, J. / Bormann, R. et al. | 1993
- 394
-
Ion beam mixing of TiC/Fe bilayersGesan, P. / Delafond, J. / Cahoreau, M. / Eymery, J.P. / Garem, H. et al. | 1993
- 398
-
The effect of pre- and postimplantation of carbon on the phase formation and surface mechanical properties of an ion beam mixed Fe-Ti multilayered systemHirvonen, J.-P. / Nastasi, M. / Jervis, T.R. / Zocco, T.G. et al. | 1993
- 404
-
X-ray diffraction study of residual stress modification in Cu/W superlattices irradiated by light and heavy ionsBadawi, K.F. / Goudeau, Ph. / Pacaud, J. / Jaouen, C. / Delafond, J. / Naudon, A. / Gladyszewski, G. et al. | 1993
- 408
-
β phase formation and dissolution under ion irradiation in Cu/Pd thin filmsQuan, Z. / Naundorf, V. / Macht, M.-P. / Wollenberger, H. et al. | 1993
- 412
-
Diffusion-induced grain boundary migration during ion beam mixing Au/Cu bilayersAlexander, D. E. / Baldo, P. M. / Rehn, L. E. et al. | 1993
- 412
-
Diffusion-induced grain boundary migration during ion beam mixing of Au/Cu bilayersAlexander, Dale E. / Baldo, P.M. / Rehn, L.E. et al. | 1993
- 417
-
Mixing effect of Fe/Ni multilayers of overall Fe65Ni35 compositionTosello, C. / Ferrari, F. / Brand, R. / Keune, W. / Marest, G. / El Khakani, M.A. / Parellada, J. / Principi, G. / Lo Russo, S. / Rigato, V. et al. | 1993
- 421
-
Construction of free energy diagram and phase formation by ion mixing in the NiNb systemBai, H.Y. / Zhang, Z.J. / Liu, B.X. et al. | 1993
- 424
-
Amorphization of In/Au-bilayers by low temperature ion beam mixingMiehle, W. / Plewnia, A. / Ziemann, P. et al. | 1993
- 428
-
Effect of ion beam irradiation in amorphous ferromagnetic alloysMatsumoto, N. / Bang, Lu / Maeta, H. / Jakubovics, J.P. / Haruna, K. / Ono, F. et al. | 1993
- 432
-
Surface composition changes of CuBe alloys under Ar+ ion bombardment studied by Auger electron spectroscopyShopov, A.V. / Vichev, R.G. / Karpuzov, D.S. et al. | 1993
- 436
-
Ion beam mixing of Fe/Al multilayers: a CEMS studyAlexandre, J.L. / Vasconcellos, M.A.Z. / Hübler, R. / Teixeira, S.R. / Baumvol, I.J.R. et al. | 1993
- 445
-
A comparison of IBAD films for wear and corrosion protection with other PVD coatingsEnsinger, W. / Schröer, A. / Wolf, G.K. et al. | 1993
- 455
-
RBS and channeling study of the correlation between ion beam mixing and amorphization in a binary metal systemBenkoulal, T. / Jagielski, J. / Thomé, L. / Vassent, B. / Kopcewicz, M. et al. | 1993
- 459
-
Low energy 15N and 14N implantation in chromium analysed by NRA and RBSRose, M. / Baumann, H. / Markwitz, A. / Bethge, K. et al. | 1993
- 463
-
Properties of carbon nitride thin films prepared by ion and vapor depositionChubaci, J.F.D. / Sakai, T. / Yamamoto, T. / Ogata, K. / Ebe, A. / Fujimoto, F. et al. | 1993
- 467
-
Corrosion stability of TiN prepared by ion implantation and PVDHeide, N. / Schultze, J.W. et al. | 1993
- 472
-
Hydride formation in zirconium and titanium as a result of low energy ion bombardmentJackman, J.A. / Carpenter, G.J.C. / McCaffrey, J. et al. | 1993
- 476
-
Defect formation and defect-impurity interaction in the hexagonal transition metals Re and LuKoch, H. / Vianden, R. et al. | 1993
- 480
-
Behavior of nitrogen implanted into Zr at high fluenceMiyagawa, Soji / Ikeyama, Masami / Saitoh, Kazuo / Nakao, Setsuo / Sakai, Yasuo / Miyagawa, Yoshiko et al. | 1993
- 485
-
High dose carbon implantation in nickelZhang, Z.H. / Chow, L. / Tao, Y.K. / Paschke, K.D. / Chu, W.K. et al. | 1993
- 491
-
Phase transformations in Mo under simultaneous implantation of metal and gas ionsTyumentscv, A.N. / Pinzhin, Yu.P. / Korotaev, A.D. / Behert, A.E. / Savchenko, A.O. / Kolobov, Yu.R. / Bugaev, S.P. / Schanin, P.M. / Yushkov, Y.Yu. et al. | 1993
- 496
-
Evolution of profiles of implanted nitrogen in metal bilayersBourdelle, K.K. / Boerma, D.O. et al. | 1993
- 501
-
High dose implantation of yttrium and barium ions into copper: the use of a sacrificial carbon layer for enhanced retentionClapham, L. / Whitton, J.L. / Rück, D. et al. | 1993
- 507
-
MeV implantation into semiconductorsWilliams, J.S. / Elliman, R.G. / Ridgway, M.C. / Jagadish, C. / Ellingboe, S.L. / Goldberg, R. / Petravic, M. / Wong, W.C. / Dezhang, Z. / Nygren, E. et al. | 1993
- 514
-
Mechanisms of amorphization in ion implanted crystalline siliconCampisano, S.U. / Coffa, S. / Raineri, V. / Priolo, F. / Rimini, E. et al. | 1993
- 519
-
Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with PbAlberts, H.W. / Gaigher, H.L. / Bredell, L.J. et al. | 1993
- 523
-
The displacement damage produced in Si by 590 MeV protonsAlurralde, M. / Paschoud, F. / Victoria, M. / Gavillet, D. et al. | 1993
- 528
-
Annealing of defects created in silicon by MeV ion implantationSealy, L. / Barklie, R.C. / Brown, W.L. / Jacobson, D.C. et al. | 1993
- 532
-
Ion implantaion damage and annealing in GaSbCallec, R. / Poudoulec, A. / Salvi, M. / L'Haridon, H. et al. | 1993
- 532
-
Ion implantation damage and annealing in GaSbCallec, R. / Poudoulec, A. / Salvi, M. / L'Haridon, H. / Favennec, P.N. / Gauneau, M. et al. | 1993
- 538
-
Dose rate dependence of the ion-beam-induced epitaxial crystallization in siliconHeera, V. / Kögler, R. / Skorupa, W. / Grötzschel, R. et al. | 1993
- 543
-
Swelling of GaSb at low energies (1.3–14.5 keV)Gauneau, M. / Chaplain, R. / Rupert, A. / Toudic, Y. / Riviere, D. / Callec, R. et al. | 1993
- 548
-
The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contactsJároli, Erika / Gyulai, J. / Pécz, B. / Veresegyházy, R. / Radnóczi, G. / Barna, P.B. et al. | 1993
- 552
-
Strain distribution in As+ and Sb+ ion implanted and annealed 〈100〉 SiHorvath, Z.E. / Peto, G. / Zsoldos, Eva / Gyulai, J. et al. | 1993
- 552
-
Strain distribution in As^+ and Sb^+ ion implanted and annealed <100> SiHorvath, Z. E. / Peto, G. / Zsoldos, E. / Gyulai, J. et al. | 1993
- 556
-
Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon?Kögler, R. / Heera, V. / Skorupa, W. / Glaser, E. / Bachmann, T. / Rück, D. et al. | 1993
- 559
-
Dynamics of void formation during implantation of Si under self-annealing conditions and their influence on dopant distributionLullu, G. / Merli, P.G. / Migliori, A. / Brusatin, G. / Drigo, A.V. et al. | 1993
- 564
-
In situ detection of rearrangement processes during electron beam annealing of ion implanted InPMaurer, C. / Kallweit, R. / Baumann, H. / Bethge, K. / Krimmel, E.F. et al. | 1993
- 569
-
Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffractionPesek, A. / Kastler, P. / Lischka, K. / Palmetshofer, L. et al. | 1993
- 573
-
Defect levels in silicon bombarded with light ionsReisinger, J. / Palmetshofer, I. et al. | 1993
- 578
-
Pulsed UV laser irradiation effect for Sn+-implanted GaAsShibata, H. / Makita, Y. / Ikeda, T. / Hasegawa, M. / Yamada, A. / Niki, S. / Iida, T. / Uekusa, S. et al. | 1993
- 583
-
Generation rate of point defects in silicon irradiated by MeV ionsSvensson, B.G. / Jagadish, C. / Williams, J.S. et al. | 1993
- 587
-
Near-surface defects formed by MeV ion implantation into siliconSayama, H. / Kinomura, A. / Yuba, Y. / Takai, M. et al. | 1993
- 591
-
Annealing behavior of damage in Si-implanted InP studied by piezoelectric detection of photoacoustic signalYoshinaga, Hiroshi / Kawai, Jun / Agui, Takaaki / Uehara, Fumiya / Matsumori, Tokue et al. | 1993
- 596
-
The kinetics of self ion amorphization of siliconGoldberg, R.D. / Elliman, R.G. / Williams, J.S. et al. | 1993
- 603
-
Conductivity changes and impurity-defect interactions in ion-implanted amorphous siliconCoffa, S. / Priolo, F. / Poate, J.M. / Glarum, S.H. et al. | 1993
- 607
-
Photon assisted implantation (PAI)Biró, L.P. / Gyulai, J. / Ryssel, H. / Frey, L. / Kormány, T. / Tuan, N.M. / Horváth, Z.E. et al. | 1993
- 612
-
Analysis of the SiO2 defects originated by phosphorus implantation in MOS structuresBota, S.A. / Montserrat, J. / Pérez-Rodríguez, A. / Morante, J.R. et al. | 1993
- 616
-
Optical investigation of implantation damage in GaAs/AlGaAs quantum wellsKieslich, A. / Straka, J. / Forchel, A. / Stoffel, N.G. et al. | 1993
- 620
-
Paramagnetic defects in silicon irradiated with 40 MeV As ionsDvurechenskii, A.V. / Karanovich, A.A. / Rybin, A.V. / Grötzschel, R. et al. | 1993
- 624
-
X-ray diffraction analysis of damage accumulation due to the nuclear energy loss of 50 keV and 1–2.2 MeV B ions implanted in siliconFabbri, R. / Lulli, G. / Nipoti, R. / Servidori, M. et al. | 1993
- 628
-
TEM study of Si+, Ge+ and C+ implanted siliconKikuchi, Yoshio / Kase, Masataka / Kimura, Mami / Yoshida, Masamichi et al. | 1993
- 632
-
Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantationYamamura, Shin'ichi / Kimura, Tadamasa / Yugo, Shigemi / Saito, Riichiro / Murata, Michio / Kamiya, Takeshi et al. | 1993
- 636
-
Disorder in high-dose, high-energy O- and Si-implanted SiEllingboe, S.L. / Ridgway, M.C. et al. | 1993
- 640
-
Gold and platinum accumulation on buried defects in siliconRohr, P. / Grob, J.I. / Siffert, P. et al. | 1993
- 644
-
Incorporation of In into Si preamorphized with Si, Ge and SnVianden, R. / Gwilliam, R. / Sealy, B. et al. | 1993
- 647
-
Damage distribution in GaAs implanted at elevated temperatureKalitzova, M. / Karpuzov, D. / Pashov, N. / Vitali, G. / Rossi, M. / Scholz, R. et al. | 1993
- 653
-
Optical doping of silicon with erbium by ion implantationPolman, A. / Custer, J.S. / Snoeks, E. / van den Hoven, G.N. et al. | 1993
- 659
-
High energy implantation of 10B and 11B into (100) silicon in channel and in random directionBogen, S. / Gong, L. / Frey, L. / Ryssel, H. et al. | 1993
- 663
-
Radiation defects passivation by neutron irradiation of hydrogen-implanted siliconBolotov, V.V. / Emeksuzyan, V.M. / Plotnikov, G.L. / Vologdin, E.N. et al. | 1993
- 667
-
Negative differential resistance in proton-beam modified siliconBolotov, V.V. / Emeksuzyan, V.M. / Plotnikov, G.L. / Vologdin, E.N. et al. | 1993
- 670
-
The activation energy of electrical conduction of ion beam mixed Sb/n-Si Schottky contactsMalherbe, J.B. / Weimer, K.P. / Friedland, E. / Bredell, L.J. et al. | 1993
- 674
-
Codoping effects of As and Xe on ion-beam-induced epitaxial crystallization of SiHasegawa, Masataka / Kobayashi, Naoto / Hayashi, Nobuyuki et al. | 1993
- 679
-
An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealingJäger, H.U. et al. | 1993
- 683
-
Ion implantation of zirconium and hafnium in InP and GaAsKnecht, A. / Kuttler, M. / Scheffler, H. / Wolf, T. / Bimberg, D. / Kräutle, H. et al. | 1993
- 687
-
Formation and characterization of shallow junctions by through-film ion implantation in GaAsShen, H.L. / Xu, H.L. / Xia, G.Q. / Zou, S.C. / Zhou, Z.Y. / Jiang, B.Y. / Liu, X.H. et al. | 1993
- 691
-
Properties of Mn+-implanted GaAsNiki, S. / Makita, Y. / Yamada, A. / Iida, T. / Obara, A. / Tanoue, H. / Kitahara, T. / Aoki, K. / Katsuwada, N. et al. | 1993
- 697
-
Ion implanted arsenic in siliconLarsen, Arne Nylandsted / Christensen, Birgit / Christensen, Peter H. / Shiryaev, Sergey Yu. et al. | 1993
- 702
-
Structural characterization of nitrogen ion implantation into silicon for sensor technologyRomano-Rodriguez, A. / El-Hassani, A. / Samitier, J. / Perez-Rodriguez, A. et al. | 1993
- 702
-
Structural characterisation of nitrogen ion implantation into silicon for sensor technologyRomano-Rodríguez, A. / El-Hassani, A. / Samitier, J. / Pérez-Rodríguez, A. / Martínez, S. / Morante, J.R. / Esteve, J. / Montserrat, J. et al. | 1993
- 706
-
Structural and optical characterization of implanted and annealed semi-insulating GaAsTrudeau, Yves B. / Arès, R. / Kajrys, G.E. / Gagnon, G. / Brebner, J.L. / Jouanne, M. et al. | 1993
- 711
-
Defect production, annealing and electrical activation in Si+ implanted InPWendler, E. / Müller, P. / Bachmann, T. / Wesch, W. et al. | 1993
- 716
-
High energy ion implantation in GaAsWesch, W. / Wendler, E. et al. | 1993
- 721
-
Low temperature recrystallization of ion implanted InPMüller, P. / Wesch, W. / Solovyev, V.S. / Gaiduk, P.I. / Wendler, E. / Komarov, F.F. / Götz, G. et al. | 1993
- 729
-
Implantation induced changes in quantum well structuresKalish, R. / Feldman, L.C. / Jacobson, D.C. / Weir, B.E. / Merz, J.L. / Kramer, L.-Y. / Doughty, K. / Stone, S. / Lau, K.-K. et al. | 1993
- 734
-
Intermixing of MeV ion-implanted and annealed AlGaAs/GaAs superlatticesTamura, M. / Hashimoto, A. / Saito, T. et al. | 1993
- 742
-
Ion bombardment of SiO2/Si and Si measured by in situ X-ray reflectivityChason, E. / Mayer, T.M. / McIlroy, D. / Matzke, C.M. et al. | 1993
- 747
-
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wellsBradley, I.V. / Gillin, W.P. / Homewood, K.P. / Grey, R. et al. | 1993
- 751
-
Regrowth and strain recovery of Sb implanted Si1−xGex strained layersAtzmon, Z. / Eizenberg, M. / Zolotoyabko, E. / Hong, Stella Q. / Mayer, J.W. / Schäffler, F. et al. | 1993
- 755
-
Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°CDesimoni, J. / Behar, M. / Bernas, H. / Lin, X.W. / Liliental-Weber, Z. / Washburn, J. et al. | 1993
- 759
-
Influence of impurities on ion beam induced TiSi2 formationDehm, C. / Raum, B. / Kasko, I. / Ryssel, H. et al. | 1993
- 764
-
Ion beam synthesis of buried CrSi2 layersDudda, Chr. / Mantl, S. / Dieker, Ch. / Dolle, M. / Lüth, H. et al. | 1993
- 768
-
The fabrication of epitaxial GexSi1−x layers by ion implantationElliman, R.G. / Wong, W.C. et al. | 1993
- 773
-
Ion implantation and annealing of Fe for semi-insulating layers formation in InPGasparotto, A. / Carnera, A. / Arzenton, G. / Tromby, M. / Pellegrino, S. / Vidimari, F. / Caldironi, M. et al. | 1993
- 777
-
Formation of relaxed Si1−xGex layers on SIMOX by high-dose 74Ge ion implantationHolländer, B. / Mantl, S. / Michelsen, W. / Mesters, S. et al. | 1993
- 781
-
A comparison of shallow and deep iron silicide layers fabricated by ion beam synthesisHunt, T.D. / Reeson, K.J. / Gwilliam, R.M. / Homewood, K.P. / Wilson, R.J. / Sealy, B.J. / Meekison, C.D. / Booker, G.R. / Oberschachtsiek, P. et al. | 1993
- 786
-
Effect of ion-beam mixing temperature on cobalt silicide formationKasko, I. / Dehm, C. / Frey, L. / Ryssel, H. et al. | 1993
- 790
-
Low-energy ion-beam-induced epitaxial crystallization of GaAsKobayashi, Naoto / Hasegawa, Masataka / Hayashi, Nobuyuki et al. | 1993
- 795
-
On the ion beam synthesis of GaAsSb alloysKozanecki, A. / Groetzschel, R. et al. | 1993
- 798
-
X-ray and channeling analysis of ion implanted gallium arsenideKozanecki, A. / Scaly, B.J. / Gwilliam, R. / Kidd, P. et al. | 1993
- 802
-
High-dose implantations of Al into Si(111) and Si(100)Daley, Richard S. / Musket, Ronald G. et al. | 1993
- 807
-
High-energy high-dose Ni irradiation of SOI structuresLindner, J.K.N. / Kersten, P. / te Kaat, E.H. / Henke, S. et al. | 1993
- 813
-
Thin buried oxide in implanted siliconMeda, L. / Bertoni, S. / Cerofolini, G.F. / Spaggiari, C. et al. | 1993
- 818
-
Epitaxial metal island formation on Si(111) by cluster deposition from a beamJonk, P. / Hector, R. / Wittenberg, F. / Meiwes-Broer, K.H. et al. | 1993
- 822
-
Direct formation of device worthy thin film SIMOX structures by low energy oxygen implantationNejim, A. / Li, Y. / Marsh, C.D. / Hemment, P.L.F. / Chater, R.J. / Kilner, J.A. / Booker, G.R. et al. | 1993
- 827
-
Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wiresPrins, F.E. / Lehr, G. / Burkard, M. / Schweizer, H. / Smith, G.W. et al. | 1993
- 831
-
Growth and electrical properties of ion implanted FeSi2 on (111)SiRadermacher, K. / Mantl, S. / Gerthsen, D. / Dieker, Ch. / Lüth, H. et al. | 1993
- 835
-
MeV In-ion implantation for electrical isolation of p+-InPRidgway, M.C. / Elliman, R.G. / Hauser, N. et al. | 1993
- 838
-
Buried oxide layers formed by oxygen implantation on screened oxide silicon wafers: structural analysisSamitier, J. / Martinez, S. / Pérez-Rodríguez, A. / Garrido, B. / Morante, J.R. / Papon, A.M. / Margail, J. et al. | 1993
- 842
-
Residual stress during local SIMOX process: Raman measurement and simulationSeidl, A. / Takai, M. / Sayama, H. / Haramura, K. et al. | 1993
- 846
-
High-dose mixed Ga/As and Ga/P ion implantations in silicon single crystalsShiryaev, S.Yu. / Nylandsted Larsen, A. et al. | 1993
- 851
-
Segregation of dopants in ion beam synthesised CoSi2 layersReeson, Karen J. / Hunt, Tim D. / Gwilliam, Russell M. / Sealy, Brian J. / Douglas Meekison, C. / Roger Booker, G. et al. | 1993
- 857
-
Concentration profiles of high dose MeV oxygen implanted siliconTouhouche, K. / Jackman, J. / Yelon, A. et al. | 1993
- 862
-
Precipitation kinetics in silicon during ion beam synthesis of buried silicide layersTrinkaus, H. / Mantl, S. et al. | 1993
- 867
-
Ion beam synthesis of ternary (Fe1−xCox)SiWieser, E. / Panknin, D. / Skorupa, W. / Querner, G. / Henrion, W. / Albrecht, J. et al. | 1993
- 867
-
Ion beam synthesis of ternary (Fe~1~-~xCo~x)Si~2Wieser, E. / Panknin, D. / Skorupa, W. / Querner, G. et al. | 1993
- 872
-
Production and in-situ analysis of microscale oxide structures in silicon by oxygen implantationWittmaack, K. et al. | 1993
- 877
-
Effect of the incidence geometry on the ion induced Ni-silicides surface compositional modificationsVerucchi, R. / Scorzoni, C. / Valeri, S. et al. | 1993
- 881
-
Interface structure during ion-beam-induced epitaxial crystallization of siliconCuster, J.S. / Battaglia, A. / Saggio, M. / Priolo, F. et al. | 1993
- 889
-
Ion implantation effects in silicon carbideMcHargue, Carl J. / Williams, J.M. et al. | 1993
- 895
-
Ion beam synthesis of buried metallic and semiconducting silicidesMantl, S. et al. | 1993
- 901
-
Lattice damage in ion implanted silicon-germanium alloysHaynes, T.E. / Holland, O.W. et al. | 1993
- 906
-
Ion beam synthesis of CoSi2 in Si1−xGex alloy layers with different Ge concentrationsLauwers, A. / Maex, K. / Vanhellemont, J. / Caymax, M. / Poortmans, J. / Van Rossum, M. et al. | 1993
- 910
-
Ion implantation of isoelectronic impurities into InPYamada, A. / Makita, Y. / Mayer, K.M. / Iida, T. / Yoshinaga, H. / Kimura, S. / Niki, S. / Shibata, H. / Uekusa, S. / Matsumori, T. et al. | 1993
- 915
-
Influence of Al and P doping on optical and electrical properties of ion beam synthesized SiCBattaglia, A. / Derst, G. / Kalbitzer, S. et al. | 1993
- 919
-
Ion implantation and rapid thermal annealing of AuCdxHg1−xTe structuresGerasimenko, N.N. / Nesterov, A.A. / Vasil'ev, V.V. et al. | 1993
- 924
-
Redistribution of magnesium in InAs during post-implantation annealingGerasimenko, N.N. / Myasnikov, A.M. / Obodnikov, V.I. / Safronov, L.N. et al. | 1993
- 927
-
Ion implantation doping of polycrystalline SiC thin films prepared by PECVDKrötz, G. / Hellmich, W. / Müller, G. / Derst, G. / Kalbitzer, S. et al. | 1993
- 931
-
Composition changes in Ar+ and e−-bombarded SiC: an attempt to distinguish ballistic and chemically guided effectsMiotello, Antonio / Calliari, Lucia / Kelly, Roger / Laidani, Nadhira / Bonelli, Marco / Guzman, Luis et al. | 1993
- 938
-
Disorder creation and annealing in Hg implanted CdTeTraverse, A. / Leo, G. / Alves, J.G. / Almeida, P.M. / Da Silva, M.F. / Soares, J.C. et al. | 1993
- 943
-
Polytype transitions in ion implanted silicon carbidePezoldt, J. / Kalnin, A.A. / Moskwina, D.R. / Savelyey, W.D. et al. | 1993
- 949
-
Thermal stability of Si/CoSi2 multiple layer systemsSchippel, S. / Witzmann, A. / Lindner, J.K.N. et al. | 1993
- 957
-
The contribution of ion-beam techniques to the physics and technology of amorphous semiconductorsMüller, Gerhard et al. | 1993
- 966
-
Environments of ion-implanted dopants in amorphous silicon at various stages of annealingGreaves, G.N. / Dent, A.J. / Dobson, B.R. / Kalbitzer, S. / Müller, G. et al. | 1993
- 973
-
In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a “microscope” for thermodynamic processes in nucleationShin, Jung H. / Atwater, Harry A. et al. | 1993
- 978
-
Properties of fully implanted amorphous SixC1−x: H alloysCompagnini, G. / Calcagno, L. / Foti, G. et al. | 1993
- 982
-
Structural relaxation in amorphous silicon prepared by ion implantationHiroyama, Yuichi / Motooka, Teruaki / Tokuyama, Takashi / Wei, Long / Tanigawa, Shoichiro et al. | 1993
- 986
-
Recrystallization of In and P implanted InPKringhøj, P. / Shiryaev, S.Yu. et al. | 1993
- 990
-
Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealingKuznetsov, A.Yu. / Khodos, I.I. / Mordkovich, V.N. / Vyatkin, A.F. / Chichenin, N.G. et al. | 1993
- 994
-
Ion-beam-induced epitaxy in B-implanted silicon preamorphized with Ge ionsKuriyama, K. / Takahashi, Hiromi / Shimoyama, K. / Hayashi, N. / Hasegawa, M. / Kobayashi, N. et al. | 1993
- 998
-
Theory of diffusion processes in implanted siliconAntoncilk, E. et al. | 1993
- 1002
-
Studies of reactive ion etching using Colutron hot filament dc plasma ion sourcesBello, I. / Chang, W.H. / Feng, X.H. / Lau, W.M. et al. | 1993
- 1006
-
Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channelingHayashi, N. / Suzuki, R. / Watanabe, H. / Sakamoto, I. / Kobayashi, N. / Mikado, T. / Yamazaki, T. / Kuriyama, K. et al. | 1993
- 1010
-
Dry and wet etching properties of thermally grown silicon dioxide layer after N+ ion implantation and annealingKudo, Kazuhiro / Kuniyoshi, Shigekazu / Tanaka, Kuniaki et al. | 1993
- 1014
-
X-ray diffraction, Rutherford backscattering and channeling measurements on Pb inclusions in SiMilants, K. / Hendrickx, P. / Pattyn, H. et al. | 1993
- 1021
-
The multi-aspects of ion beam modification of insulatorsDavenas, J. / Thevenard, P. et al. | 1993
- 1028
-
Transport phenomena in implanted electroactive polymersMoliton, André / Moreau, Christian / Moliton, Jean-Pierre / Froyer, Gérard et al. | 1993
- 1036
-
Ion implantation effects in Al2O3: hydration and optical absorptionArnold, George W. et al. | 1993
- 1040
-
Defect generation and healing in SiC powder subjected to Ar implantationHeuberger, M. / Telle, R. / Petzow, G. et al. | 1993
- 1045
-
Heat-induced versus particle-beam-induced chemistry in polyimideMarletta, Giovanni / Iacona, Fabio et al. | 1993
- 1050
-
Improvement of surface properties of polymers by ion implantationÖchsner, R. / Kluge, A. / Zechel-Malonn, S. / Gong, L. / Ryssel, H. et al. | 1993
- 1055
-
Chemical and energy deposition effects of keV ions on the adhesion of Cu films onto polymersTegen, N. / Wartusch, J. / Merkel, K.-H. et al. | 1993
- 1059
-
RBS study of oxidation processes in polypropylene and polyethylene implanted with fluorine ionsHnatowicz, V. / Havránek, V. / Kvítek, J. / Peřina, V. / Švorčík, V. / Rybka, V. et al. | 1993
- 1063
-
Infrared analysis of the irradiation effects in aromatic polyimide filmsXu, D. / Xu, X.L. / Du, G.D. / Wang, R. / Zou, S.C. / Liu, X.H. et al. | 1993
- 1067
-
Surface modification of polystyrene for improving wettability by ion implantationSuzuki, Yoshiaki / Kusakabe, Masahiro / Iwaki, Masaya et al. | 1993
- 1072
-
Electrical and optical investigations of carbon clusters formed in organic films by ion implantationIizuka, Masaaki / Kuniyoshi, Shigekazu / Kudo, Kazuhiro / Tanaka, Kuniaki et al. | 1993
- 1076
-
Modification of conducting polymers by low energy reactive ion beams and their chemical effectsJung, K.G. / Schultze, J.W. / Buchal, Ch. et al. | 1993
- 1080
-
Characterization of Ag- and W-implanted polyimide filmsIwaki, Masaya / Yabe, Katsumasa / Fukuda, Atsushi / Watanabe, Hiroshi / Itoh, Akira / Takeda, Masafumi et al. | 1993
- 1085
-
On the influence of low energy tantalum ion implantation on indentation fracture and hardness of α-alumina single crystalsEnsinger, W. / Nowak, R. et al. | 1993
- 1091
-
TEM-microstructural investigations of ion beam modified ceramics with respect to their macroscopic propertiesFischer, W. / Wolf, G.K. / Ruoff, H. / Katerbau, K.-H. et al. | 1993
- 1097
-
Ion implantation and ion beam assisted deposition onto cemented tungsten carbide and syalonGuzman, L. / Scotoni, I. / Miotello, A. / Elena, M. / Kothari, D.C. et al. | 1993
- 1101
-
Microstructural characterization of zirconia films produced by the dual ion beam deposition techniqueHuang, N.K. / Colligon, J.S. / Kheyrandish, H. / Tang, Y.S. et al. | 1993
- 1104
-
Ion beam induced epitaxial crystallization of sapphireZhou, W. / Sood, D.K. / Elliman, R.G. / Ridgway, M.C. et al. | 1993
- 1109
-
Ion irradiation-induced nano-scale polycrystallization of intermetallic and ceramic materialsWang, L.M. / Birtcher, R.C. / Ewing, R.C. et al. | 1993
- 1114
-
High energy heavy ion irradiation effects in α-Al2O3Canut, B. / Ramos, S.M.M. / Thevenard, P. / Moncoffre, N. / Benyagoub, A. / Marest, G. / Meftah, A. / Toulemonde, M. / Studer, F. et al. | 1993
- 1119
-
Ion beam modification of aromatic polymersShukushima, Satoshi / Nishikawa, Shinya / Matsumoto, Yasuyo / Hibino, Yutaka et al. | 1993
- 1123
-
Electrical conductivity in niobium implanted TiO2 rutileRamos, S.M.M. / Canut, B. / Brenier, R. / Gea, L. / Romana, L. / Brunel, M. / Thevenard, P. et al. | 1993
- 1128
-
Ion beam irradiation effect on solubility of spin-on glass to methanolYanagisawa, Junichi / Koh, Young-Bum / Gamo, Kenji et al. | 1993
- 1135
-
Waveguides and waveguide lasers fabricated by ion implantationChandler, P.J. / Townsend, P.D. et al. | 1993
- 1143
-
Processing high-T c superconductors with GeV heavy ionsMarwick, A.D. / Civale, L. / Krusin-Elbaum, L. / Wheeler, R. / Thompson, J.R. / Worthington, T.K. / Kirk, M.A. / Sun, Y.R. / Kerchner, H.R. / Holtzberg, F. et al. | 1993
- 1150
-
Ion implanted optical waveguides in KNbO3 for efficient blue light second harmonic generationFleuster, M. / Buchal, Ch. / Fluck, D. / Günter, P. et al. | 1993
- 1154
-
Composition changes in bombarded oxides and carbides: the distinction between ballistic, chemically guided, and chemically random behaviorKelly, Roger / Bertóti, Imre / Miotello, Antonio et al. | 1993
- 1164
-
Irradiation experiments on HTSC thin filmsKroener, T. / Linker, G. / Meyer, O. / Strehlau, B. / Massing, S. et al. | 1993
- 1168
-
XPS studies on the charge states of Cr and Cu atoms implanted into α-Al2O3 and MgO single crystalsFutagami, T. / Aoki, Y. / Yoda, O. / Nagai, S. / Rück, D.M. et al. | 1993
- 1171
-
Modification of the optical spectra of glass by metal ion implantationYao, X.Y. / Fojas, P.B. / Brown, I.G. / Rubin, M.D. et al. | 1993
- 1174
-
Quantitative investigations of the removal of glass material by low energy ion beams with the use of optical interferometryWeiser, M. et al. | 1993
- 1178
-
Hydrogen assisted crystallisation of strontium titanateSimpson, T.W. / Mitchell, I.V. et al. | 1993
- 1182
-
Ion-implanted optical waveguides in zinc tungstateRodman, M.J. / Chandler, P.J. / Townsend, P.D. et al. | 1993
- 1185
-
Incorporation of Nd implanted in strontiumtitanate studied with photoluminescenceTenner, M.G. / Kessener, Y.A.R.R. / Overwijk, M.H.F. et al. | 1993
- 1189
-
Zirconium implantation into oxygen implanted ironTakahashi, Jun / Terashima, Keiichi / Iwaki, Masaya et al. | 1993
- 1192
-
Substrate effects in silver-implanted glassesMazzoldi, P. / Tramontin, L. / Boscolo-Boscoletto, A. / Battaglin, G. et al. | 1993