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Vibrational modes and changing molecular conformation of perfluororubrene in thin films and solution
American Institute of Physics | 2015| -
Exciton size and binding energy limitations in one-dimensional organic materials
American Institute of Physics | 2015| -
Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice
NationallizenzAmerican Institute of Physics | 2000| -
Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers
NationallizenzAmerican Institute of Physics | 2002| -
Theoretical investigation of excited states of C3
NationallizenzAmerican Institute of Physics | 2004| -
Spin dynamics in ultrathin film structures with a network of misfit dislocations
NationallizenzAmerican Institute of Physics | 2004| -
Multilevel charge storage in silicon nanocrystal multilayers
NationallizenzAmerican Institute of Physics | 2005| -
Transferable tight-binding parametrization for the group-III nitrides
NationallizenzAmerican Institute of Physics | 2002| -
Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator
NationallizenzAmerican Institute of Physics | 2005| -
“Compliant” twist-bonded GaAs substrates: The potential role of pinholes
NationallizenzAmerican Institute of Physics | 1999| -
Cylindrical nanopores in NiO induced by swift heavy ions
NationallizenzAmerican Institute of Physics | 2005| -
Modulation of carrier density in ZnO nanowires without impurity doping
NationallizenzAmerican Institute of Physics | 2010| -
Ferroelectric epitaxial nanocrystals obtained by a self-patterning method
NationallizenzAmerican Institute of Physics | 2003| -
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach
NationallizenzAmerican Institute of Physics | 2002| -
GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding
NationallizenzAmerican Institute of Physics | 2003| -
Extremely faint high proper motion objects from SDSS stripe 82
American Institute of Physics | 2009| -
Summary Abstract: Evolution of hole shape in {100}, {110}, and {111} monocrystalline thin films of gold
American Institute of Physics | 1987| -
Low thermal power electron beam annealing of scanning tunneling microscope tips
NationallizenzAmerican Institute of Physics | 1997| -
S1←S0 transition of 2,3-benzofluorene at low temperatures in the gas phase
NationallizenzAmerican Institute of Physics | 2008| -
Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding
NationallizenzAmerican Institute of Physics | 2003| -
Carbonization‐induced SiC micropipe formation in crystalline Si
NationallizenzAmerican Institute of Physics | 1995| -
Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer
NationallizenzAmerican Institute of Physics | 2007| -
Optical properties of fully and partially fluorinated rubrene in films and solution
Freier ZugriffAmerican Institute of Physics | 2013| -
Carbon-induced undersaturation of silicon self-interstitials
NationallizenzAmerican Institute of Physics | 1998| -
The contribution of vacancies to carbon out-diffusion in silicon
NationallizenzAmerican Institute of Physics | 1999| -
Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer
NationallizenzAmerican Institute of Physics | 2009| -
Si nanocrystal based memories: Effect of the nanocrystal density
NationallizenzAmerican Institute of Physics | 2006| -
Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning
NationallizenzAmerican Institute of Physics | 2001| -
Resonant Raman spectra of diindenoperylene thin films
NationallizenzAmerican Institute of Physics | 2011| -
Nickel precipitation at nanocavities in separation by implantation of oxygen
American Institute of Physics | 2000| -
Enhanced photoluminescence from self-organized rubrene single crystal surface structures
NationallizenzAmerican Institute of Physics | 2010| -
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen
NationallizenzAmerican Institute of Physics | 1999| -
Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers
NationallizenzAmerican Institute of Physics | 2004| -
Local luminescence of ZnO nanowire-covered surface: A cathodoluminescence microscopy study
NationallizenzAmerican Institute of Physics | 2005| -
Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide
NationallizenzAmerican Institute of Physics | 1998| -
Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide
NationallizenzAmerican Institute of Physics | 2000| -
Low-temperature hydrophobic silicon wafer bonding
NationallizenzAmerican Institute of Physics | 2003| -
Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates
NationallizenzAmerican Institute of Physics | 2006| -
Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures
NationallizenzAmerican Institute of Physics | 2008| -
Microstructural evolution in H ion induced splitting of freestanding GaN
NationallizenzAmerican Institute of Physics | 2008| -
Absorption of Frenkel Excitons in PTCDA Thin Films, in PTCDA/Alq3 Multilayers and in Co‐deposited Films
American Institute of Physics | 2007| -
High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces
NationallizenzAmerican Institute of Physics | 2002| -
Formation of nanovoids in high-dose hydrogen implanted GaN
NationallizenzAmerican Institute of Physics | 2006| -
Bulk Inversion Asymmetry Spin‐splitting in L‐valley GaSb Quantum Wells
American Institute of Physics | 2005| -
A “smarter-cut” approach to low temperature silicon layer transfer
NationallizenzAmerican Institute of Physics | 1998| -
Dynamical masses for the nearest brown dwarf binary: ε Indi Ba, Bb
American Institute of Physics | 2009| -
Optical gain in monodispersed silicon nanocrystals
NationallizenzAmerican Institute of Physics | 2004| -
Birefringence in optical waveguides made by silicon nanocrystal superlattices
NationallizenzAmerican Institute of Physics | 2004|
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