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Contacting self-ordered molecular wires by nanostencil lithography
American Institute of Physics | 2010| -
Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition
American Institute of Physics | 1986| -
Nonlinear optical spectroscopy of Si–heterostructure interfaces
American Institute of Physics | 1996| -
Evaluation of the ion bombardment energy on silicon dioxide films deposited from plasmas on Si and unstrained substrates
American Institute of Physics | 2002| -
Electrical characteristics of Ar‐ion sputter induced defects in epitaxially grown n‐GaAs
American Institute of Physics | 1992| -
Invited Article: Comparison of hyperspectral coherent Raman scattering microscopies for biomedical applications
Freier ZugriffAmerican Institute of Physics | 2018| -
Stable tungsten disilicide contacts for surface and thin film resistivity measurements
American Institute of Physics | 2009| -
Influence of carbon on the electrical properties of Schottky diodes
American Institute of Physics | 1998| -
Ultra-high vacuum deposition and characterization of silicon nitride thin films
American Institute of Physics | 2012| -
Invited Article: A rigid coherent anti-Stokes Raman scattering endoscope with high resolution and a large field of view
Freier ZugriffAmerican Institute of Physics | 2018| -
Friction force microscopy on clean surfaces of NaCl, NaF, and AgBr
American Institute of Physics | 1994| -
Electromigration in passivated Cu interconnects studied by transmission x-ray microscopy
American Institute of Physics | 2002| -
Growth of carbon doping using by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications
American Institute of Physics | 1999| -
Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers
American Institute of Physics | 2005| -
Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfaces
American Institute of Physics | 1993| -
Atomic resolution on the surface of LiF(100) by atomic force microscopy
American Institute of Physics | 1991| -
Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures
American Institute of Physics | 2004| -
Optical second harmonic generation: A probe of atomic structure and bonding at Si–SiO2 interfaces, and other chemically modified Si surfaces
American Institute of Physics | 1994| -
Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes
American Institute of Physics | 2010|
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