On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS Transistors (Englisch)
- Neue Suche nach: Luck, A.
- Neue Suche nach: Jung, S.
- Neue Suche nach: Brederlow, R.
- Neue Suche nach: Thewes, R.
- Neue Suche nach: Goser, K.
- Neue Suche nach: Weber, W.
- Neue Suche nach: Luck, A.
- Neue Suche nach: Jung, S.
- Neue Suche nach: Brederlow, R.
- Neue Suche nach: Thewes, R.
- Neue Suche nach: Goser, K.
- Neue Suche nach: Weber, W.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
;
47
;
1231-1240
;
2000
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ISSN:
- Aufsatz (Zeitschrift) / Print
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Titel:On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS Transistors
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Beteiligte:Luck, A. ( Autor:in ) / Jung, S. ( Autor:in ) / Brederlow, R. ( Autor:in ) / Thewes, R. ( Autor:in ) / Goser, K. ( Autor:in ) / Weber, W. ( Autor:in )
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Erschienen in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 47 ; 1231-1240
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Verlag:
- Neue Suche nach: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Erscheinungsdatum:01.01.2000
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Format / Umfang:10 pages
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ISSN:
-
Medientyp:Aufsatz (Zeitschrift)
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Format:Print
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Sprache:Englisch
- Neue Suche nach: 621.3 / 621
- Weitere Informationen zu Dewey Decimal Classification
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Klassifikation:
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Datenquelle:
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PAPERS - Device Phenomena - Estimation of the Effects of Remote Charge Scattering on Electron Mobility of n-MOSFET's with Ultrathin Gate OxidesYang, N. et al. | 2000
- 448
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PAPERS - Device Phenomena - Characterization and Simulation of GaSb Device-Related PropertiesStollwerck, G. et al. | 2000
- 448
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Characterization and Simulation of GaSb Device-Related PropertiesStollwerck, G. / Sulima, O. V. / Bett, A. W. et al. | 2000
- 458
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PAPERS - Device Phenomena - High-Temperature Characteristics of High-Quality SiC MIS Capacitors with O-N-O Gate DielectricWang, X.W. et al. | 2000
- 458
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High-Temperature Characteristics of High-Quality SiC MIS Capacitors with O/N/O Gate DielectricWang, X. W. / Luo, Z. J. / Ma, T. P. et al. | 2000
- 464
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A p-Channel MOS Synapse Transistor with Self-Convergent Memory WritesDiorio, C. et al. | 2000
- 464
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PAPERS - Device Phenomena - A p-Channel MOS Synapse Transistor with Self-Convergent Memory WritesDiorio, C. et al. | 2000
- 473
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PAPERS - Device Phenomena - Latent Damage Investigation on Lateral Nonuniform Charge Generation and Stress-Induced Leakage Current in Silicon Dioxide Subjected to High-Field Current Impulse StressingChim, W.-K. et al. | 2000
- 473
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Latent Damage Investigation on Lateral Nonuniform Charge Generation and Stress-Induced Leakage Current in Silicon Dioxide Subjected to High-Field Current Impulse StressingChim, W. K. / Lim, P. S. et al. | 2000
- 482
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The 2.45 GHz 36 W CW Si Recessed Gate Type SIT with High Gain and High Voltage OperationNishizawa, J. / Motoya, K. / Itoh, A. et al. | 2000
- 482
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PAPERS - Solid-State Power and High Voltage - The 2.45 GHz 36 W CW Si Recessed Gate Type SIT with High Gain and High Voltage OperationNishizawa, J. et al. | 2000
- 488
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Lower Limit of Method for the Extraction of Ionization Coefficients from the Electrical Characteristics of Heterojunction Bipolar TransistorsShamir, N. / Ritter, D. et al. | 2000
- 488
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BRIEFS - Lower Limit of Method for the Extraction of Ionization Coefficients from the Electrical Characteristics of Heterojunction Bipolar TransistorsShamir, N. et al. | 2000
- 493
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Comparison Between Wurtzite Phase and Zincblende Phase GaN MESFET's Using a Full Band Monte Carlo SimulationFarahmand, M. / Brennan, K. F. et al. | 2000
- 493
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PAPERS - Compound Semiconductor Devices - Comparison Between Wurtzite Phase and Zincblende Phase GaN MESFET's Using a Full Band Monte Carlo SimulationFarahmand, M. et al. | 2000
- 498
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PAPERS - Compound Semiconductor Devices - Mechanism for Recoverable Power Drift in PHEMT'sLeoni III, R.E. et al. | 2000
- 498
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Mechanism for Recoverable Power Drift in PHEMT'sLeoni, R. E. / Bao, J. / Bu, J. / Du, X. / Shirokov, M. S. / Hwang, J. C. et al. | 2000
- 507
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Epitaxially-Grown GaN Junction Field Effect TransistorsZhang, L. / Lester, L. F. / Baca, A. G. / Shul, R. J. / Chang, P. C. / Willison, C. G. / Mishra, U. K. / Denbaars, S. P. / Zolper, J. C. et al. | 2000
- 507
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PAPERS - Compound Semiconductor Devices - Epitaxially-Grown GaN Junction Field Effect TransistorsZhang, L. et al. | 2000
- 512
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Very slow charge trapping and release in ion implanted GaAs (MESFETs)Chiu, C.H. / Boroumand, F.A. / Swanson, J.G. et al. | 2000
- 512
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PAPERS - Compound Semiconductor Devices - Very Slow Charge Trapping and Release in Ion Implanted GaAsChiu, C.-H. et al. | 2000
- 512
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Very Slow Charge Trapping and Release in Ion Implanted GaAsChiu, C. H. / Boroumand, F. A. / Swanson, J. G. et al. | 2000
- 517
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PAPERS - Compound Semiconductor Devices - Suppression of Gate Leakage Current in n-AlGaAs-GaAs Power HEMT'sNagayama, A. et al. | 2000
- 517
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Suppression of Gate Leakage Current in n-AlGaAs/GaAs Power HEMT'sNagayama, A. / Yamauchi, S. / Hariu, T. et al. | 2000
- 523
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Models of Boron Redistribution During Thermal Oxidation with General Oxidation RateSuzuki, K. / Miyashita, T. et al. | 2000
- 523
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PAPERS - Materials Processing and Packaging - Models of Boron Redistribution During Thermal Oxidation with General Oxidation RateSuzuki, K. et al. | 2000
- 529
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Numerical simulation of neutron radiation effects in avalanche photodiodesOsborne, M.D. / Hobson, P.R. / Watts, S.J. et al. | 2000
- 529
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PAPERS - Optoelectronics, Displays, Imaging - Numerical Simulation of Neutron Radiation Effects in Avalanche PhotodiodesOsborne, M.D. et al. | 2000
- 537
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PAPERS - Optoelectronics, Displays, Imaging - Low-Frequency Noise in Single Growth Planar Separate Absorption, Grading, Charge, and Multiplication Avalanche PhotodiodesAn, S. et al. | 2000
- 537
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Low-Frequency Noise in Single Growth Planar Separate Absorption, Grading, Charge, and Multiplication Avalanche PhotodiodesAn, S. / Deen, M. J. et al. | 2000
- 544
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PAPERS - Optoelectronics, Displays, Imaging - Theoretical Analysis of the Detectivity in N-p and P-n GaSb-GaInAsSb Infrared PhotodetectorsTian, Y. et al. | 2000
- 544
-
Theoretical Analysis of the Detectivity in N-p and P-n GaSb/GaInAsSb Infrared PhotodetectorsTian, Y. / Zhang, B. / Zhou, T. / Jiang, H. / Jin, Y. et al. | 2000
- 553
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High-Selectivity Single-Chip Spectrometer in Silicon for Operation at Visible Part of the SpectrumCorreia, J. H. / Bartek, M. / Wolffenbuttel, R. F. et al. | 2000
- 553
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PAPERS - Sensors and Actuators - High-Selectivity Single-Chip Spectrometer in Silicon for Operation at Visible Part of the SpectrumCorreia, J.H. et al. | 2000
- 560
-
PAPERS - Silicon Devices - Physical Modeling of Spiral Inductors on SiliconYue, C.P. et al. | 2000
- 560
-
Physical Modeling of Spiral Inductors on SiliconYue, C. P. / Wong, S. S. et al. | 2000
- 569
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Ultra-Thin Elevated Channel Poly-Si TFT Technology for Fully-Integrated AMLCD System on GlassZhang, S. / Zhu, C. / Sin, J. K. / Li, J. N. / Mok, P. K. et al. | 2000
- 569
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PAPERS - Silicon Devices - Ultra-Thin Elevated Channel Poly-Si TFT Technology for Fully-Integrated AMLCD System on GlassZhang, S. et al. | 2000
- 576
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Interfacial Electronic Traps in Surface Controlled TransistorsCai, J. / Sah, C. T. et al. | 2000
- 576
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PAPERS - Silicon Devices - Interfacial Electronic Traps in Surface Controlled TransistorsCai, J. et al. | 2000
- 584
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Fabrication and Performance of Selective HSG Storage Cells for 256 Mb and 1 Gb DRAM ApplicationsBanerjee, A. / Wise, R. L. / Plumton, D. L. / Bevan, M. / Pas, M. F. / Crenshaw, D. L. / Aoyama, S. / Mansoori, M. M. et al. | 2000
- 584
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PAPERS - Silicon Devices - Fabrication and Performance of Selective HSG Storage Cells for 256 Mb and 1 Gb DRAM ApplicationsBanerjee, A. et al. | 2000
- 593
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The Behavior of Narrow-Width SOI MOSFET's with MESA IsolationWang, H. / Chan, M. / Wang, Y. / Ko, P. K. et al. | 2000
- 593
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PAPERS - Silicon Devices - The Behavior of Narrow-Width SOI MOSFET's with MESA IsolationWang, H. et al. | 2000
- 601
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PAPERS - Solid-State Device Phenomena - Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate DielectricsVogel, E.M. et al. | 2000
- 601
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Limitations of Conductance to the Measurement of the Interface State Density of MOS Capacitors with Tunneling Gate DielectricsVogel, E. M. / Henson, W. K. / Richter, C. A. et al. | 2000
- 609
-
A Probe Detector for Defectivity Assessment in p-n JunctionsZanchi, A. / Zappa, F. / Ghioni, M. et al. | 2000
- 609
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PAPERS - Solid-State Device Phenomena - A Probe Detector for Defectivity Assessment in p-n JunctionsZanchi, A. et al. | 2000
- 617
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Two-Dimensional Analysis of Substrate-Trap Effects on Turn-On Characteristics in GaAs MESFET'sHorio, K. / Wakabayashi, A. / Yamada, T. et al. | 2000
- 617
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PAPERS - Solid-State Device Phenomena - Two-Dimensional Analysis of Substrate-Trap Effects on Turn-On Characteristics in GaAs MESFET'sHorio, K. et al. | 2000
- 625
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Dead-Space-Based Theory Correctly Predicts Excess Noise Factor for Thin GaAs and AlGaAs Avalanche PhotodiodesSaleh, M. A. / Hayat, M. M. / Saleh, B. E. / Teich, M. C. et al. | 2000
- 625
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PAPERS - Solid-State Device Phenomena - Dead-Space-Based Theory Correctly Predicts Excess Noise Factor for Thin GaAs and AlGaAs Avalanche PhotodiodesSaleh, M.A. et al. | 2000
- 634
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Analysis of a Large-Orbit Gyrotron in a Coaxial Waveguide Under Assistant Background FieldsMuralidhar, Y. / Jain, P. K. / Basu, B. N. et al. | 2000
- 634
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PAPERS - Vacuum Electron Devices - Analysis of a Large-Orbit Gyrotron in a Coaxial Waveguide Under Assistant Background FieldsMuralidhar, Y. et al. | 2000
- 643
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An Experimental Study of the Effect of Quantization on the Effective Electrical Oxide Thickness in MOS Electron and Hole Accumulation Layers in Heavily Doped SiChindalore, G. / Shih, W. K. / Jallepalli, S. / Hareland, S. A. / Tasch, A. F. / Maziar, C. M. et al. | 2000
- 643
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BRIEFS - An Experimental Study of the Effect of Quantization on the Effective Electrical Oxide Thickness in MOS Electron and Hole Accumulation Layers in Heavily Doped SiChindalore, G. et al. | 2000
- 646
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BRIEFS - A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Submicron MOSFET'sÇelik-Butler, Z. et al. | 2000
- 646
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A Method for Locating the Position of Oxide Traps Responsible for Random Telegraph Signals in Submicron MOSFET'sCelik-Butler, Z. / Vasina, P. / Amarasinghe, N. V. et al. | 2000
- 648
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A Channel Resistance Derivative Method for Effective Channel Length Extraction in LDD MOSFET'sNiu, G. / Cressler, J. D. / Mathew, S. J. / Subbanna, S. et al. | 2000
- 648
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BRIEFS - A Channel Resistance Derivative Method for Effective Channel Length Extraction in LDD MOSFET'sNiu, G. et al. | 2000
- 650
-
Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 KeV X-Ray IrradiationLing, C. H. / Ang, C. H. / Ang, D. S. et al. | 2000
- 650
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BRIEFS - Characterization of Leakage Current in Thin Gate Oxide Subjected to 10 KeV X-Ray IrradiationLing, C.H. et al. | 2000
- 653
-
Enhanced Corrugated QWIP Performance Using Dielectric CoverageDas, N. C. / Choi, K. K. et al. | 2000
- 653
-
BRIEFS - Enhanced Corrugated QWIP Performance Using Dielectric CoverageDas, N.C. et al. | 2000
- 655
-
BRIEFS - Shallow Source-Drain Extension Effects on External Resistance in Sub-0.1 mm MOSFET'sChoi, C.-H. et al. | 2000
- 655
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Shallow Source/Drain Extension Effects on External Resistance in Sub-0.1 mum MOSFET'sChoi, C. H. / Goo, J. S. / Yu, Z. / Dutton, R. W. et al. | 2000
- 662
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PAPERS - Compound Semiconductor Devices - Base Transit Time in Abrupt GaN-InGaN-GaN HBT'sChiu, S.-Y. et al. | 2000
- 662
-
Base Transit Time in Abrupt GaN/InGaN/GaN HBT'sChiu, S. Y. / Anwar, A. F. / Wu, S. et al. | 2000
- 667
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A Simple Yet Comprehensive Unified Physical Model of the Donor Layer Electrons in Delta-Doped and Uniformly Doped HEMT'sKarmalkar, S. / Rao, R. R. et al. | 2000
- 667
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PAPERS - Compound Semiconductor Devices - A Simple Yet Comprehensive Unified Physical Model of the Donor Layer Electrons in Delta-Doped and Uniformly Doped HEMT'sKarmalkar, S. et al. | 2000
- 677
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PAPERS - Compound Semiconductor Devices - Relation Between Low-Frequency Noise and Long-Term Reliability of Single AlGaAs-GaAs Power HBT'sMohammadi, S. et al. | 2000
- 677
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Relation Between Low-Frequency Noise and Long-Term Reliability of Single AlGaAs/GaAs Power HBT'sMohammadi, S. / Pavlidis, D. / Bayraktaroglu, B. et al. | 2000
- 687
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High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiCSchmid, U. / Sheppard, S. T. / Wondrak, W. et al. | 2000
- 687
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PAPERS - Compound Semiconductor Devices - High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6H-SiCSchmid, U. et al. | 2000
- 692
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PAPERS - Compound Semiconductor Devices - High Voltage GaN Schottky RectifiersDang, G.T. et al. | 2000
- 692
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High Voltage GaN Schottky RectifiersDang, G. T. / Zhang, A. P. / Ren, F. / Cao, X. A. / Pearton, S. J. / Cho, H. / Han, J. / Chyi, J. I. / Lee, C. M. / Chuo, C. C. et al. | 2000
- 697
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PAPERS - Sensors and Actuators - Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in OxygenGirgis, E. et al. | 2000
- 697
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Tunnel Magnetoresistance Devices Processed by Oxidation in Air and UV Assisted Oxidation in OxygenGirgis, E. / Schelten, J. / Gruenberg, P. / Rottlaender, P. / Kohlstedt, H. et al. | 2000
- 702
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PAPERS - Sensors and Actuators - A High-Speed Capacitive Humidity Sensor with On-Chip Thermal ResetKang, U. et al. | 2000
- 702
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A High-Speed Capacitive Humidity Sensor with On-Chip Thermal ResetKang, U. / Wise, K. D. et al. | 2000
- 711
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Double Sided Minority Carrier Collection in Silicon Solar CellsVan Kerschaver, E. / Zechner, C. / Dicker, J. et al. | 2000
- 711
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PAPERS - Silicon Devices - Double Sided Minority Carrier Collection in Silicon Solar CellsKerschaver, E.Van et al. | 2000
- 718
-
Explaining the dependences of the hole and electron mobilities in Si inversion layersPirovano, A. / Lacaita, A.L. / Zandler, G. / Oberhuber, R. et al. | 2000
- 718
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Explaning the Dependences of the Hole and Electron Mobilities in Si Inversion LayersPirovano, A. / Lacaita, A. L. / Zandler, G. / Oberhuber, R. et al. | 2000
- 718
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PAPERS - Silicon Devices - Explaining the Dependences of the Hole and Electron Mobilities in Si Inversion LayersPirovano, A. et al. | 2000
- 725
-
A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench IsolationLin, S. C. / Kuo, J. B. / Huang, K. T. / Sun, S. W. et al. | 2000
- 725
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PAPERS - Silicon Devices - A Closed-Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron VLSI CMOS Devices Using Shallow Trench IsolationLin, S.-C. et al. | 2000
- 734
-
A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS MeasurementsKolding, T. E. et al. | 2000
- 734
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PAPERS - Silicon Devices - A Four-Step Method for De-Embedding Gigahertz On-Wafer CMOS MeasurementsKolding, T.E. et al. | 2000
- 741
-
PAPERS - Silicon Devices - Dielectric Breakdown Mechanism of Thin-SiO2 Studied by the Post-Breakdown Resistance StatisticsSatake, H. et al. | 2000
- 741
-
Dielectric Breakdown Mechanism of Thin-SiO~2 Studied by the Post-Breakdown Resistance StatisticsSatake, H. / Toriumi, A. et al. | 2000
- 746
-
PAPERS - Silicon Devices - Effect of Physical Stress on the Degredation of Thin SiO2 Films Under Electrical StressYang, T.-C. et al. | 2000
- 746
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Effect of Physical Stress on the Degredation of Thin SiO~2 Films Under Electrical StressYang, T. C. / Saraswat, K. C. et al. | 2000
- 746
-
Effect of physical stress on the degradation of thin SiO2 films under electrical stressYang, T.C. / Saraswat, K.C. et al. | 2000
- 756
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New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance FluctuationsMizuno, T. et al. | 2000
- 756
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PAPERS - Silicon Devices - New Channel Engineering for Sub-100 nm MOS Devices Considering Both Carrier Velocity Overshoot and Statistical Performance FluctuationsMizuno, T. et al. | 2000
- 762
-
PAPERS - Silicon Devices - Characterization of Shallow Silicided Junctions for Sub-Quarter Micron ULSJ Technology -- Extraction of Silicidation Induced Schottky Contact AreaLee, H.-D. et al. | 2000
- 762
-
Characterization of Shallow Silicided Junctions for Sub-Quarter Micron ULSI Technology-Extraction of Silicidation Induced Schottky Contact AreaLee, H. D. et al. | 2000
- 768
-
A Physical Thermal Noise Model for SOI MOSFETJin, W. / Chan, P. C. / Lau, J. et al. | 2000
- 768
-
PAPERS - Silicon Devices - A Physical Thermal Noise Model for SOI MOSFETJin, W. et al. | 2000
- 774
-
Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Cells of Dynamic Random-Access MemoriesYamaguchi, K. et al. | 2000
- 774
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PAPERS - Silicon Devices - Theoretical Study of Deep-Trap-Assisted Anomalous Currents in Worst-Bit Cells of Dynamic Random-Access MemoriesYamaguchi, K. et al. | 2000
- 781
-
FRAM Cell Design with High Immunity to Fatigue and Imprint for 0.5 mum 3 1T1C Mbit FRAMTanaka, S. / Ogiwara, R. / Itoh, Y. / Miyakawa, T. / Takeuchi, Y. / Doumae, S. / Takenaka, H. / Kamata, H. et al. | 2000
- 781
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PAPERS - Silicon Devices - FRAM Cell Design with High Immunity to Fatigue and Imprint for 0.5 mm 3 V ITIC 1 Mbit FRAMTanaka, S. et al. | 2000
- 789
-
PAPERS - Silicon Devices - Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Distributions in MOSFET'sMahapatra, S. et al. | 2000
- 789
-
Device Scaling Effects on Hot-Carrier Induced Interface and Oxide-Trapped Charge Distributions in MOSFET'sMahapatra, S. / Parikh, C. D. / Rao, V. R. / Viswanathan, C. R. / Vasi, J. et al. | 2000
- 797
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PAPERS - Silicon Devices - An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT'sTang, Y.T. et al. | 2000
- 797
-
An Electrical Method for Measuring the Difference in Bandgap across the Neutral Base in SiGe HBT'sTang, Y. T. / Hamel, J. S. et al. | 2000
- 805
-
Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate OxideAsenov, A. / Saini, S. et al. | 2000
- 805
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PAPERS - Silicon Devices - Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate OxideAsenov, A. et al. | 2000
- 813
-
PAPERS - Silicon Devices - Design Optimization of High-Performance Low-Temperature 0.18 mm MOSFET's with Low-Impurity-Density Channels at Supply Voltage Below 1 VXu, J. et al. | 2000
- 813
-
Design Optimization of High-Performance Low-Temperature 0.18 mum MOSFET's with Low-Impurity-Density Channels at Supply Voltage Below 1 VXu, J. / Cheng, M. C. et al. | 2000
- 822
-
PAPERS - Silicon Devices - Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation StructuresOishi, T. et al. | 2000
- 822
-
Isolation Edge Effect Depending on Gate Length of MOSFET's with Various Isolation StructuresOishi, T. / Shiozawa, K. / Furukawa, A. / Abe, Y. / Tokuda, Y. et al. | 2000
- 828
-
Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming TechniqueEsseni, D. / Villa, C. / Tassan, S. / Ricco, B. et al. | 2000
- 828
-
PAPERS - Silicon Devices - Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming TechniqueEsseni, D. et al. | 2000
- 835
-
Gate Length Scalability of n-MOSFET's Down to 30 nm: Comparison Between LDD and Non-LDD StructuresMurakami, E. / Yoshimura, T. / Goto, Y. / Kimura, S. et al. | 2000
- 835
-
PAPERS - Silicon Devices - Gate Length Scalability of n-MOSFET's Down to 30 nm: Comparison Between LDD and Non-LDD StructuresMurakami, E. et al. | 2000
- 841
-
PAPERS - Silicon Devices - New Self-Adjusted Dynamic Source Multilevel P-Channel Flash MemoryLin, R.-L. et al. | 2000
- 841
-
New Self-Adjusted Dynamic Source Multilevel P-Channel Flash MemoryLin, R. L. / Chang, T. / Wang, A. C. / Hsu, C. C. et al. | 2000
- 848
-
High-Performance Deep Submicron CMOS Technologies with Polycrystalline-SiGe GatesPonomarev, Y. V. / Stolk, P. A. / Salm, C. / Schmitz, J. / Woerlee, P. H. et al. | 2000
- 848
-
PAPERS - Silicon Devices - High-Performance Deep Submicron CMOS Technologies with Polycrystalline-SiGe GatesPonomarev, Y.V. et al. | 2000
- 856
-
PAPERS - Silicon Devices - Transistor Characteristics of 14-nm-Gate-Length EJ-MOSFET'sKawaura, H. et al. | 2000
- 856
-
Transistor Characteristics of 14-nm-Gate-Length EJ-MOSFET'sKawaura, H. / Sakamoto, T. / Baba, T. / Ochiai, Y. / Fujita, J. / Sone, J. et al. | 2000
- 861
-
A New Substrate Current Model for Submicron MOSFET'sKolhatkar, J. S. / Dutta, A. K. et al. | 2000
- 861
-
PAPERS - Silicon Devices - A New Substrate Current Model for Submicron MOSFET'sKolhatkar, J.S. et al. | 2000
- 864
-
RF Potential of a 0.18-mum CMOS Logic Device TechnologyBurghartz, J. N. / Hargrove, M. / Webster, C. S. / Groves, R. A. / Keene, M. / Jenkins, K. A. / Logan, R. / Nowak, E. et al. | 2000
- 864
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PAPERS - Silicon Devices - RF Potential of a 0.18-mm CMOS Logic Device TechnologyBurghartz, J.N. et al. | 2000
- 871
-
Universal Impurity Ionization Parameters in MIS C-V Freeze-Out Characteristics and Direct Extraction of Surface Doping ConcentrationBouillon, P. / Gwoziecki, R. / Skotnicki, T. / Alieu, J. / Gentil, P. et al. | 2000
- 871
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PAPERS - Solid-State Device Phenomena - Universal Impurity Ionization Parameters in MIS C-V Freeze-Out Characteristics and Direct Extraction of Surface Doping ConcentrationBouillon, P. et al. | 2000
- 878
-
Surface Geometric Effects on Tunneling RatesEncinosa, M. et al. | 2000
- 878
-
PAPERS - Solid-State Device Phenomena - Surface Geometric Effects on Tunneling RatesEncinosa, M. et al. | 2000
- 883
-
PAPERS - Solid-State Device Phenomena - Temperature Dependent Minority Electron Mobilities in Strained Si1-xGex (0.2 <= x <= 0.4) LayersRieh, J.-S. et al. | 2000
- 883
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Temperature Dependent Minority Electron Mobilities in Strained Si~1~-~xGe~x (0.2Rieh, J. S. / Bhattacharya, P. K. / Croke, E. T. et al. | 2000
- 891
-
BRIEFS - Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of Lcff and of Rsd of LDD MOSFET'sAhmed, K. et al. | 2000
- 891
-
Limitations of the Modified Shift-and-Ratio Technique for Extraction of the Bias Dependence of L~e~f~f and R~s~d of LDD MOSFET'sAhmed, K. / Osburn, C. / Wortman, J. / Hauser, J. et al. | 2000
- 893
-
A Three Terminal Varactor for RF IC's in Standard CMOS TechnologySvelto, F. / Manzini, S. / Castello, R. et al. | 2000
- 893
-
BRIEFS - A Three Terminal Varactor for RF IC's in Standard CMOS TechnologySvelto, F. et al. | 2000
- 895
-
Novel AlInAsSb/InGaAs Heterostructure for Double-Barrier Resonant Tunneling DiodeSu, Y. K. / Chang, J. R. / Lu, Y. T. / Lin, C. L. / Wu, K. M. et al. | 2000
- 895
-
BRIEFS - Novel AlInAsSb-InGaAs Heterostructure for Double-Barrier Resonant Tunneling DiodeSu, Y.-K. et al. | 2000
- 897
-
Theory of the Single Contact Electron Beam Induced Current EffectOng, V. K. / Lau, K. T. / Ma, J. G. et al. | 2000
- 897
-
BRIEFS - Theory of the Single Contact Electron Beam Induced Current EffectOng, V.K.S. et al. | 2000
- 900
-
CORRESPONDENCE - Comments on "A Numerical Analysis of the Storage Times of Dynamic Random-Access Memory Cells Incorporating Ultrathin Dielectrics"Yu, Y.S. et al. | 2000
- 900
-
Comments on "A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics"Yun Seop Yu, / Sung Woo Hwang, / Du-Heon Song, / Kyeong Ho Lee, et al. | 2000
- 903
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ANNOUNCEMENTS - Call for Papers -- International Semiconductor Conference, October 2000| 2000
- 904
-
ANNOUNCEMENTS - 12th International Conference on Indium Phosphide and Related Materials, May 2000| 2000
- 905
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PAPERS - Compound Semiconductor Devices - An Analytic Model for Estimating the Length of the Velocity Saturated Region in GaAs MESFET'sLeifso, C. et al. | 2000
- 905
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An Analytic Model for Estimating the Length of the Velocity Saturated Region in GaAs MESFET'sLeifso, C. / Haslett, J. W. et al. | 2000
- 910
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PAPERS - Compound Semiconductor Devices - Avalanche Noise Characteristics of Thin GaAs Structures with Distributed Carrier GenerationLi, K.F. et al. | 2000
- 910
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Avalanche Noise Characteristics of Thin GaAs Structures with Distributed Carrier GenerationLi, K. F. / Ong, D. S. / David, J. P. / Tozer, R. C. / Rees, G. J. / Plimmer, S. A. / Chang, K. Y. / Roberts, J. S. et al. | 2000
- 915
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PAPERS - Compound Semiconductor Devices - Numerical Modeling of Energy Balance Equations in Quantum Well AlxGa1-xAs-GaAs p-i-n PhotodiodesFardi, H.Z. et al. | 2000
- 915
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Numerical Modeling of Energy Balance Equations in Quantum Well Al~xGa~1~-~x As/GaAs p-i-n PhotodiodesFardi, H. Z. / Winston, D. W. / Hayes, R. E. / Hanna, M. C. et al. | 2000
- 922
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PAPERS - Compound Semiconductor Devices - A Physical Model for the Kink Effect in InAlAs-InGaAs HEMT'sSomerville, M.H. et al. | 2000
- 922
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A Physical Model for the Kink Effect in InAlAs/InGaAs HEMT'sSomerville, M. H. / Ernst, A. / del Alamo, J. A. et al. | 2000
- 931
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PAPERS - Optoelectronics, Displays, Imaging - Combined Optical-Electric Simulation of CCD Cell Structures by Means of the Finite-Difference Time-Domain MethodKörner, T.O. et al. | 2000
- 931
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Combined Optical/Electric Simulation of CCD Cell Structures by Means of the Finite-Difference Time-Domain MethodKorner, T. O. / Gull, R. et al. | 2000
- 939
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An a-SiGe:H Phototransistor Integrated with a Pd Film on Glass Substrate for Hydrogen MonitoringHsieh, W. T. / Fang, Y. K. / Lee, W. J. / Wu, K. H. / Ho, J. J. / Chen, K. H. / Huang, S. Y. et al. | 2000
- 939
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PAPERS - Optoelectronics, Displays, Imaging - An a-SiGe:H Phototransistor Integrated with a Pd Film on Glass Substrate for Hydrogen MonitoringHsieh, W.T. et al. | 2000
- 944
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Design and Characterization of Superlattice Infrared Photodetector Operating at Low Bias VoltageHsu, M. C. / Hsu, Y. F. / Lin, S. Y. / Kuan, C. H. et al. | 2000
- 944
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PAPERS - Optoelectronics, Displays, Imaging - Design and Characterization of Superlattice Infrared Photodetector Operating at Low Bias VoltageHsu, M.C. et al. | 2000
- 949
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PAPERS - Optoelectronics, Displays, Imaging - Analysis and Reduction of Signal Readout Circuitry Temporal Noise in CMOS Image Sensors for Low-Light LevelsDegerli, Y. et al. | 2000
- 949
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Analysis and Reduction of Signal Readout Circuitry Temporal Noise in CMOS Image Sensors for Low-Light LevelsDegerli, Y. / Lavernhe, F. / Magnan, P. / Farre, J. A. et al. | 2000
- 963
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640 x 486 Long-Wavelength Two-Color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraGunapala, S. D. / Bandara, S. V. / Singh, A. / Liu, J. K. / Rafol, S. B. / Luong, E. M. / Mumolo, J. M. / Tran, N. Q. / Ting, D. Z. / Vincent, J. D. et al. | 2000
- 963
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PAPERS - Optoelectronics, Displays, Imaging - 640 x 486 Long-Wavelength Two-Color GaAs-AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array CameraGunapala, S.D. et al. | 2000
- 972
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Magnetic Field Measurements with a Novel Surface Micromachined Magnetic-Field SensorEmmerich, H. / Schofthaler, M. et al. | 2000
- 972
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PAPERS - Sensors and Actuators - Magnetic Field Measurements with a Novel Surface Micromachined Magnetic-Field SensorEmmerich, H. et al. | 2000
- 978
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Impact of CdTe/CdZnTe Substrate Resistivity on Performance Degradation of Long-Wavelength n^+-on-p HgCdTe Infrared PhotodiodesDhar, V. / Garg, A. K. / Bhan, R. K. et al. | 2000
- 978
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PAPERS - Sensors and Actuators - Impact of CdTe-CdZnTe Substrate Resistivity on Performance Degradation of Long-Wavelength n+-on-p HgCdTe Infrared PhotodiodesDhar, V. et al. | 2000
- 987
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PAPERS - Silicon Devices - Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation TechnologiesRohatgi, A. et al. | 2000
- 987
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Comprehensive Study of Rapid, Low-Cost Silicon Surface Passivation TechnologiesRohatgi, A. / Doshi, P. / Moschner, J. / Lauinger, T. / Aberle, A. / Ruby, D. S. et al. | 2000
- 994
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The Effect of Co Incorporation on Electrical Characteristics of n^+/p Shallow Junction Formed by Dopant Implantation into CoSi~2 and AnnealPark, J. S. / Sohn, D. K. / Bae, J. U. / Han, C. H. / Park, J. W. et al. | 2000
- 994
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PAPERS - Silicon Devices - The Effect of Co Incorporation on Electrical Characteristics of n+-p Shallow Junction Formed by Dopant Implantation into CoSi2 and AnnealPark, J.-S. et al. | 2000
- 999
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PAPERS - Silicon Devices - Impact of Electron and Hole Inversion-Layer Capacitance on Low Voltage Operation of Scaled n- and p-MOSFET'sTakagi, S. et al. | 2000
- 999
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Impact of Electron and Hole Inversion-Layer Capacitance on Low Voltage Operation of Scaled n- and p-MOSFET'sTakagi, S. / Takayanagi, M. / Toriumi, A. et al. | 2000
- 1006
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An Analytical Model for Breakdown Voltage of Surface Implanted SOI RESURF LDMOSChung, S. K. et al. | 2000
- 1006
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PAPERS - Silicon Devices - An Analytical Model for Breakdown Voltage of Surface Implanted SOI RESURF LDMOSChung, S.-K. et al. | 2000
- 1010
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A New Quantum Effect Model for Practical Device SimulationShigyo, N. / Tanimoto, H. et al. | 2000
- 1010
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PAPERS - Silicon Devices - A New Quantum Effect Model for Practical Device SimulationShigyo, N. et al. | 2000
- 1013
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Hot-Carrier Degradation Behavior of Thin-Film SOI nMOSFET with Isolation Scheme and Buried Oxide ThicknessLee, J. W. / Kim, H. K. / Lee, W. H. / Oh, M. R. / Koh, Y. H. et al. | 2000
- 1013
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PAPERS - Silicon Devices - Hot-Carrier Degradation Behavior of Thin-Film SOI nMOSFET with Isolation Scheme and Buried Oxide ThicknessLee, J.-W. et al. | 2000
- 1018
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PAPERS - Silicon Devices - A Review of the Pseudo-MOS Transistor in SOI Wafers: Operation, Parameter Extraction, and ApplicationsCristoloveanu, S. et al. | 2000
- 1018
-
A Review of the Pseudo-MOS Transistor in SOI Wafers: Operation, Parameter Extraction, and ApplicationsCristoloveanu, S. / Munteanu, D. / Liu, M. S. et al. | 2000
- 1028
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High Performance Damascene Metal Gate MOSFET's for 0.1 mum RegimeYagishita, A. / Saito, T. / Nakajima, K. / Inumiya, S. / Akasaka, Y. / Ozawa, Y. / Hieda, K. / Tsunashima, Y. / Suguro, K. / Arikado, T. et al. | 2000
- 1028
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PAPERS - Silicon Devices - High Performance Damascene Metal Gate MOSFET's for 0.1 mm RegimeYagishita, A. et al. | 2000
- 1035
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A Strategy for Modeling of Variations due to Grain Size in Polycrystalline Thin-Film TransistorsWang, A. W. / Saraswat, K. C. et al. | 2000
- 1035
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PAPERS - Silicon Devices - A Strategy for Modeling of Variations due to Grain Size in Polycrystalline Thin-Film TransistorsWang, A.W. et al. | 2000
- 1044
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A Better Insight into the Performance of Silicon BJT's Featuring Highly Nonuniform Collector Doping ProfilesPalestri, P. / Fiegna, C. / Selmi, L. / Peter, M. S. / Hurkx, G. A. / Slotboom, J. W. / Sangiorgi, E. et al. | 2000
- 1044
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PAPERS - Silicon Devices - A Better Insight into the Performance of Silicon BJT's Featuring Highly Nonuniform Collector Doping ProfilesPalestri, P. et al. | 2000
- 1052
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Coupled Drift-Diffusion/Quantum Transmitting Boundary Method Simulations of Thin Oxide Devices with Specific Application to a Silicon Based Tunnel Switch DiodeDaniel, E. S. / Cartoixa, X. / Frensley, W. R. / Ting, D. Z. / McGill, T. C. et al. | 2000
- 1052
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PAPERS - Silicon Devices - Coupled Drift-Diffusion-Quantum Transmitting Boundary Method Simulations of Thin Oxide Devices with Specific Application to a Silicon Based Tunnel Switch DiodeDaniel, E.S. et al. | 2000
- 1061
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PAPERS - Silicon Devices - Characterization of the MIC-MILC Interface and Its Effects on the Performance of MILC Thin-Film TransistorsWong, M. et al. | 2000
- 1061
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Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film TransistorsWong, M. / Jin, Z. / Bhat, G. A. / Wong, P. / Kwok, H. S. et al. | 2000
- 1068
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RF Performance Degradation in nMOS Transistors due to Hot Carrier EffectsPark, J. T. / Lee, B. J. / Kim, D. W. / Yu, C. G. / Yu, H. K. et al. | 2000
- 1068
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PAPERS - Silicon Devices - RF Performance Degradation in nMOS Transistors due to Hot Carrier EffectsPark, J.-T. et al. | 2000
- 1073
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PAPERS - Silicon Devices - On-Chip Characterization of Interconnect Parameters and Time Delay in 0.18 mm CMOS Technology for ULSI Circuit ApplicationsLee, H.-D. et al. | 2000
- 1073
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On-Chip Characterization of Interconnect Parameters and Time Delay in 0.18 mum CMOS Technology for ULSI Circuit ApplicationsLee, H. D. / Kim, D. M. / Jang, M. J. et al. | 2000
- 1080
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PAPERS - Solid-State Device Phenomena - The Merits and Limitations of Local Impact Ionization TheoryPlimmer, S.A. et al. | 2000
- 1080
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The Merits and Limitations of Local Impact Ionization TheoryPlimmer, S. A. / David, J. P. / Ong, D. S. et al. | 2000
- 1089
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PAPERS - Solid-State Device Phenomena - Avalanche Multiplication in AlxGa1-xAs (xPlimmer, S.A. et al. | 2000
- 1089
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Avalanche Multiplication in Al~xGa~1~-~xAs (x = 0 to 0.60)Plimmer, S. A. / David, J. P. / Grey, R. / Rees, G. J. et al. | 2000
- 1098
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PAPERS - Solid-State Device Phenomena - Theoretical and Experimental Characterization of Self-Heating in Silicon Integrated Devices Operating at Low TemperaturesHidalga, F.J.De la et al. | 2000
- 1098
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Theoretical and Experimental Characterization of Self-Heating in Silicon Integrated Devices Operating at Low TemperaturesDe la Hidalga, F. J. / Deen, M. J. / Gutierrez, E. A. et al. | 2000
- 1107
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PAPERS - Solid-State Device Phenomena - Temperature Dependence and Electrical Properties of Dominant Low-Frequency Noise Source in SiGe HBTBruce, S. et al. | 2000
- 1107
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Temperature Dependence and Electrical Properties of Dominant Low-Frequency Noise Source in SiGe HBTBruce, S. / Vandamme, L. K. / Rydberg, A. et al. | 2000
- 1113
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Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE Fowler-Nordheim DiodeBender, J. P. / Wager, J. F. et al. | 2000
- 1113
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BRIEFS - Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE Fowler-Nordheim DiodeBender, J.P. et al. | 2000
- 1115
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BRIEFS - Fabrication of Strained and Double Heterojunction InxGa1-xP-In0.2Ga0.8As High Electron Mobility Transistors Grown by Solid-Source Molecular Beam EpitaxyYoon, S.F. et al. | 2000
- 1115
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Fabrication of Strained and Double Heterojunction In~xGa~1~-~xP/In~0~.~2Ga~0~.~8As High Electron Mobility Transistors Grown by Solid-Source Molecular Beam EpitaxyYoon, S. F. / Gay, B. P. / Zheng, H. Q. / Kam, H. T. / Degenhardt, J. et al. | 2000
- 1118
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BRIEFS - On the Behavior of p-n Junction Solar Cells Made in Fine-Grained Silicon LayersBeaucarne, G. et al. | 2000
- 1118
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On the behaviour of p-n junction solar cells made in fine-grained silicon layersBeaucarne, G. / Poortmans, J. / Caymax, M. / Nijs, J. / Mertens, R. et al. | 2000
- 1118
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On the Behavior of p-n Junction Solar Cells Made in Fine-Grained Silicon LayersBeaucarne, G. / Poortmans, J. / Caymax, M. / Nijs, J. / Mertens, R. et al. | 2000
- 1120
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BRIEFS - On the Origin of the Dispersion of Erased Threshold Voltages in Flash EEPROM Memory CellsEsseni, D. et al. | 2000
- 1120
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On the Origin of the Dispersion of Erased Threshold Voltages in Flash EEPROM Memory CellsEsseni, D. / Ricco, B. et al. | 2000
- 1124
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ANNOUNCEMENTS - Call for Papers -- 2000 IEEE International SOI Conference| 2000
- 1125
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Avalanche Multiplication in InP/InGaAs Double Heterojunction Bipolar Transistors with Composite CollectorWang, H. / Ng, G.-I. et al. | 2000
- 1125
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PAPERS - Compound Semiconductor Devices - Avalanche Multiplication in InP-InGaAs Double Heterojunction Bipolar Transistors with Composite CollectorWang, H. et al. | 2000
- 1134
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PAPERS - Compound Semiconductor Devices - A Planar Gate Double Beryllium Implanted GaAs Power MESFET for Low Voltage Digital Wireless Communication ApplicationChang, E.Y. et al. | 2000
- 1134
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A Planar Gate Double Beryllium Implanted GaAs Power MESFET for Low Voltage Digital Wireless Communication ApplicationChang, E. Y. / Fuh, C.-S. / Meng, C.-C. / Wang, K. B. / Chen, S. H. et al. | 2000
- 1139
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Stepping Toward Standard Methods of Small-Signal Parameter Extraction for HBT'sSotoodeh, M. / Sozzi, L. / Vinay, A. / Khalid, A. H. / Hu, Z. / Rezazadeh, A. A. / Menozzi, R. et al. | 2000
- 1139
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PAPERS - Compound Semiconductor Devices - Stepping Toward Standard Methods of Small-Signal Parameter Extraction for HBT'sSotoodeh, M. et al. | 2000
- 1152
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Integrated GaAs Schottky Mixers by Spin-on-Dielectric Wafer BondingMarazita, S. M. / Bishop, W. L. / Hesler, J. L. / Hui, K. / Bowen, W. E. / Crowe, T. W. et al. | 2000
- 1152
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PAPERS - Materials Processing and Packaging - Integrated GaAs Schottky Mixers by Spin-on-Dielectric Wafer BondingMarazita, S.M. et al. | 2000
- 1158
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PAPERS - Optoelectronics, Displays, Imaging - Optimization Procedure for the Design of Ultrafast, Highly Efficient and Selective Resonant Cavity Enhanced Schottky PhotodiodesJervase, J.A. et al. | 2000
- 1158
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Optimization Procedure for the Design of Ultrafast, Highly Efficient and Selective Resonant Cavity Enhanced Schottky PhotodiodesJervase, J. A. / Bourdoucen, H. et al. | 2000
- 1166
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PAPERS - Silicon Devices - Novel Source-Controlled Self-Verified Programming for Multilevel EEPROM'sLin, F.R.-L. et al. | 2000
- 1166
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Novel Source-Controlled Self-Verified Programming for Multilevel EEPROM'sLin, F. R.-L. / Lin, S.-Y. / Lee, M.-L. / Boe, C.-H. / Yeh, C.-P. / Wu, P.-H. / Ni, J. / King, Y.-C. / Hsu, C. C.-H. et al. | 2000
- 1175
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PAPERS - Silicon Devices - CMOS Shallow-Trench-Isolation to 50-nm Channel WidthsVanDerVoorn, P. et al. | 2000
- 1175
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CMOS Shallow-Trench-Isolation to 50-nm Channel WidthsVanDerVoorn, P. / Gan, D. / Krusius, J. P. et al. | 2000
- 1183
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PAPERS - Silicon Devices - Reliability of Ultrathin Silicon Dioxide Under Combined Substrate Hot-Electron and Constant Voltage Tunneling StressVogel, E.M. et al. | 2000
- 1183
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Reliability of Ultrathin Silicon Dioxide Under Combined Substrate Hot-Electron and Constant Voltage Tunneling StressVogel, E. M. / Suehle, J. S. / Edelstein, M. D. / Wang, B. / Chen, Y. / Bernstein, J. B. et al. | 2000
- 1192
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PAPERS - Silicon Devices - Physical Noise Modeling of SOI MOSFET's with Analysis of the Lorentzian Component in the Low-Frequency Noise SpectrumWorkman, G.O. et al. | 2000
- 1192
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Physical Noise Modeling of SOI MOSFET's with Analysis of the Lorentzian Component in the Low-Frequency Noise SpectrumWorkman, G. O. / Fossum, J. G. et al. | 2000
- 1202
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Short Channel MOSFET Model Using a Universal Channel Depletion Width ParameterSuzuki, K. et al. | 2000
- 1202
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PAPERS - Silicon Devices - Short Channel MOSFET Model Using a Universal Channel Depletion Width ParameterSuzuki, K. et al. | 2000
- 1209
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Novel Self-Limiting High-Speed Program Scheme of P-Channel DINOR Flash Memory with N-Channel Select TransistorsOhnakado, T. / Satoh, S. et al. | 2000
- 1209
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PAPERS - Silicon Devices - Novel Self-Limiting High-Speed Program Scheme of P-Channel DINOR Flash Memory with N-Channel Select TransistorsOhnakado, T. et al. | 2000
- 1214
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On the Reverse Short Channel Effect in Deep Submicron Heterojunction MOSFET's and Its Impact on the Current-Voltage BehaviorCollaert, N. / Verheyen, P. / De Meyer, K. et al. | 2000
- 1214
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PAPERS - Silicon Devices - On the Reverse Short Channel Effect in Deep Submicron Heterojunction MOSFET's and Its Impact on the Current-Voltage BehaviorCollaert, N. et al. | 2000
- 1221
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PAPERS - Silicon Devices - Approach to Electrochemical C-V Profiling in Semiconductor with Sub-Debye-Length ResolutionShashkin, V.I. et al. | 2000
- 1221
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Approach to Electrochemical C-V Profiling in Semiconductor with Sub-Debye-Length ResolutionShashkin, V. I. / Karetnikova, I. R. / Murel, A. / Nefedov, I. / Shereshevskii, I. A. et al. | 2000
- 1225
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Analysis of the Relationship Between Defect Site Generation and Dielectric Breakdown Utilizing A-Mode Stress Induced Leakage CurrentOkada, K. et al. | 2000
- 1225
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PAPERS - Silicon Devices - Analysis of the Relationship Between Defect Site Generation and Dielectric Breakdown Utilizing A-Mode Stress Induced Leakage CurrentOkada, K. et al. | 2000
- 1231
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PAPERS - Silicon Devices - On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS TransistorsLuck, A. et al. | 2000
- 1231
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On the Design Robustness of Threshold Logic Gates Using Multi-Input Floating Gate MOS TransistorsLuck, A. / Jung, S. / Brederlow, R. / Thewes, R. / Goser, K. / Weber, W. et al. | 2000
- 1241
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PAPERS - Silicon Devices - Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection-Monte Carlo TechniqueWinstead, B. et al. | 2000
- 1241
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Simulation of Schottky Barrier MOSFET's with a Coupled Quantum Injection/Monte Carlo TechniqueWinstead, B. / Ravaioli, U. et al. | 2000
- 1247
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PAPERS - Solid-State Device Phenomena - Monte Carlo Study of Sub-0.1 mm Si0.97C0.03-Si MODFET: Electron Transport and Device PerformanceDollfus, P. et al. | 2000
- 1247
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Monte Carlo Study of Sub-0.1 mum Si~0~.~9~7C~0~.~0~3/Si MODFET: Electron Transport and Device PerformanceDollfus, P. / Galdin, S. / Hesto, P. / Velazquez, J. E. et al. | 2000
- 1251
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PAPERS - Solid-State Device Phenomena - Electrical-Thermal Properties of Nonplanar Polyoxides and the Consequent Effects for EEPROM Cell OperationMattausch, H.J. et al. | 2000
- 1251
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Electrical/Thermal Properties of Nonplanar Polyoxides and the Consequent Effects for EEPROM Cell OperationMattausch, H. J. / Baumgartner, H. / Allinger, R. / Kerber, M. / Braun, H. et al. | 2000
- 1258
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Modeling of SILC Based on Electron and Hole Tunneling-Part I: Transient EffectsIelmini, D. / Spinelli, A. S. / Rigamonti, M. A. / Lacaita, A. L. et al. | 2000
- 1258
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PAPERS - Solid-State Device Phenomena - Modeling of SILC Based on Electron and Hole Tunneling -- Part I: Transient EffectsIelmini, D. et al. | 2000
- 1258
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Modeling of SILC based on electron and hole tunneling. I. Transient effectsIelmini, D. / Spinelli, A.S. / Rigamonti, M.A. / Lacaita, A.L. et al. | 2000
- 1266
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Modeling of SILC Based on Electron and Hole Tunneling-Part II: Steady-StateIelmini, D. / Spinelli, A. S. / Rigamonti, M. A. / Lacaita, A. L. et al. | 2000
- 1266
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PAPERS - Solid-State Device Phenomena - Modeling of SILC Based on Electron and Hole Tunneling -- Part II: Steady-StateIelmini, D. et al. | 2000
- 1266
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Modeling of SILC based on electron and hole tunneling. II. Steady-stateIelmini, D. / Spinelli, A.S. / Rigamonti, M.A. / Lacaita, A.L. et al. | 2000
- 1273
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PAPERS - Solid-State Device Phenomena - A New Approach for Computing the Bandwidth Statistics of Avalanche PhotodiodesHayat, M.M. et al. | 2000
- 1273
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A New Approach for Computing the Bandwidth Statistics of Avalanche PhotodiodesHayat, M. M. / Dong, G. et al. | 2000
- 1280
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A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped RegionsChen, X. B. / Wang, X. / Sin, J. K. O. et al. | 2000
- 1280
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PAPERS - Solid-State Power and High Voltage - A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped RegionsChen, X.B. et al. | 2000
- 1286
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PAPERS - Vacuum Electron Devices - Theory of Long-Term Gain Growth in Traveling Wave TubesGoebel, D.M. et al. | 2000
- 1286
-
Theory of Long-Term Gain Growth in Traveling Wave TubesGoebel, D. M. et al. | 2000
- 1293
-
Monte Carlo Simulations for Tilted-Channel Electron MultipliersChoi, Y. S. / Kim, J. M. et al. | 2000
- 1293
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PAPERS - Vacuum Electron Devices - Monte Carlo Simulations for Tilted-Channel Electron MultipliersChoi, Y.S. et al. | 2000
- 1297
-
BRIEFS - Fast Tunneling Programming of Nonvolatile MemoriesVersari, R. et al. | 2000
- 1297
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Fast Tunneling Programming of Nonvolatile MemoriesVersari, R. / Pieracci, A. / Morigi, D. / Ricco, B. et al. | 2000
- 1300
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A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V ModelingLim, K. Y. / Zhou, X. et al. | 2000
- 1300
-
BRIEFS - A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V ModelingLim, K.Y. et al. | 2000
- 1303
-
BRIEFS - Simplified Method to Investigate Quantum Mechanical Effects in MOS Structure Inversion LayerMa, Y. et al. | 2000
- 1303
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Simplified Method to Investigate Quantum Mechanical Effects in MOS Structure Inversion LayerMa, Y. / Liu, L. / Yu, Z. / Li, Z. et al. | 2000
- 1306
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ANNOUNCEMENTS - Call for Papers -- IEEE International Electron Devices Meeting, December 2000| 2000
- 1307
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ANNOUNCEMENTS - Call for Papers -- IEEE International Integrated Reliability Workshop, October 2000| 2000
- 1308
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ANNOUNCEMENTS - Call for Papers -- 13th International Symposium on Power Semiconductor Devices and IC's, June 2001| 2000
- 1309
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SPECIAL SECTION ON 1999 EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE - Editorial -- Expanded Papers from the 1999 European Solid-State Device Research ConferenceJindal, R.P. et al. | 2000
- 1309
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Expanded Papers from the 1999 European Solid-State Device Research ConferenceJindal, R. P. et al. | 2000
- 1310
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PAPERS - Compound Semiconductor Devices - Theory and Small Signal Analysis for a New Bipolar Injection Transit Time Device (BIPOLITT)Chen, L. et al. | 2000
- 1310
-
Theory and Small Signal Analysis for a New Bipolar Injection Transit Time Device (BIPOLITT)Chen, L. / Pan, D.-S. et al. | 2000
- 1315
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Modeling of Current Gain's Temperature Dependence in Heterostructure-Emitter Bipolar TransistorsYang, E. S. / Hsu, C. C. / Lo, H. B. / Yang, Y.-F. et al. | 2000
- 1315
-
PAPERS - Compound Semiconductor Devices - Modeling of Current Gain's Temperature Dependence in Heterostructure-Emitter Bipolar TransistorsYang, E.S. et al. | 2000
- 1320
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GaN N- and P-Type Schottky Diodes: Effect of Dry Etch DamageCao, X. A. / Pearton, S. J. / Dang, G. T. / Zhang, A. P. / Ren, F. / Van Hove, J. M. et al. | 2000
- 1320
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PAPERS - Materials Processing and Packaging - GaN N- and P-Type Schottky Diodes: Effect of Dry Etch DamageCao, X.A. et al. | 2000
- 1325
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PAPERS - Optoelectronics, Displays, Imaging - Comparison of Hole and Electron Intersubband Absorption Strengths for Quantum Well Infrared PhotodetectorsPan, J.L. et al. | 2000
- 1325
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Comparison of Hole and Electron Intersubband Absorption Strengths for Quantum Well Infrared PhotodetectorsPan, J. L. / Fonstad, C. G. et al. | 2000
- 1330
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PAPERS - Optoelectronics, Displays, Imaging - The Red Shift of ZnSSe Metal-Semiconductor-Metal Light Emitting Diodes with High Injection CurrentsSu, Y.K. et al. | 2000
- 1330
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The Red Shift of ZnSSe Metal-Semiconductor-Metal Light Emitting Diodes with High Injection CurrentsSu, Y. K. / Chen, W. R. / Chang, S. J. / Juang, F. S. / Lan, W. H. / Lin, A. C. H. / Chang, H. et al. | 2000
- 1334
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Dynamic Performance of UV Photodetectors Based on Polycrystalline DiamondSalvatori, S. / Rossi, M. C. / Galluzzi, F. et al. | 2000
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PAPERS - Optoelectronics, Displays, Imaging - Dynamic Performance of UV Photodetectors Based on Polycrystalline DiamondSalvatori, S. et al. | 2000
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PAPERS - Reliability - Stress Induced Leakage Current Analysis via Quantum Yield ExperimentsGhetti, A. et al. | 2000
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Stress Induced Leakage Current Analysis via Quantum Yield ExperimentsGhetti, A. / Alam, M. / Bude, J. / Monroe, D. / Sangiorgi, E. / Vaidya, H. et al. | 2000
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PAPERS - Reliability - Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm RegimeAhmed, K. et al. | 2000
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Comparative Physical and Electrical Metrology of Ultrathin Oxides in the 6 to 1.5 nm RegimeAhmed, K. / Ibok, E. / Bains, G. / Chi, D. / Ogle, B. / Wortman, J. J. / Hauser, J. R. et al. | 2000
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PAPERS - Silicon Devices - Plasma-Induced Charging Damage in Ultrathin (3-nm) Gate OxidesChen, C.-C. et al. | 2000
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Plasma-Induced Charging Damage in Ultrathin (3-nm) Gate OxidesChen, C.-C. / Lin, H.-C. / Chang, C.-Y. / Liang, M.-S. / Chien, C.-H. / Hsien, S.-K. / Huang, T.-Y. / Chao, T.-S. et al. | 2000
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PAPERS - Silicon Devices - The Performance and Reliability of PMOSFET's with Ultrathin Silicon Nitride-Oxide Stacked Gate Dielectrics with Nitrided Si-SiO2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal AnnealingWu, Y. et al. | 2000
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The Performance and Reliability of PMOSFET's with Ultrathin Silicon Nitride/Oxide Stacked Gate Dielectrics with Nitrided Si-SiO~2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal AnnealingWu, Y. / Lucovsky, G. / Lee, Y.-M. et al. | 2000
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PAPERS - Silicon Devices - Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale IntegrationSekine, K. et al. | 2000
- 1370
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Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale IntegrationSekine, K. / Saito, Y. / Hirayama, M. / Ohmi, T. et al. | 2000
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Performance of the Floating Gate/Body Tied NMOSFET Photodetector on SOI SubstrateZhang, W. / Chan, M. / Ko, P. K. et al. | 2000
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PAPERS - Silicon Devices - Performance of the Floating Gate-Body Tied NMOSFET Photodetector on SOI SubstrateZhang, W. et al. | 2000
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PAPERS - Silicon Devices - Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via Capacitance of the Source-Drain Gated DiodeChiang, C.Y.T. et al. | 2000
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Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via Capacitance of the Source/Drain Gated DiodeChiang, C. Y. T. / Yeow, Y. T. / Ghodsi, R. et al. | 2000