Semiconductor Science and Technology
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 285
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PAPERS - Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriersGuzmán, A. et al. | 2001
- 285
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Voltage-tunable two-colour quantum well infrared detector with Al-graded triangular confinement barriersA Guzmán / J L Sánchez-Rojas / J M G Tijero et al. | 2001
- 289
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Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystalsJ A García / P Fernández / A Remón et al. | 2001
- 289
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PAPERS - Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystalsGarcia, J.A. et al. | 2001
- 293
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A new method to monitor composition or cut-off wavelength variations in HgCdTe photodiode arrays using current-voltage characteristicsR K Bhan / S K Koul / V Gopal et al. | 2001
- 293
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PAPERS - A new method to monitor composition or cut-off wavelength variations in HgCdTe photodiode arrays using current-voltage characteristicsBhan, R.K. et al. | 2001
- 300
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PAPERS - Cyclotron resonance quantum Hall effect detectorAndreev, B.A. et al. | 2001
- 300
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Cyclotron resonance quantum Hall effect detectorB A Andreev / I V Erofeeva / V I Gavrilenko et al. | 2001
- 304
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PAPERS - Interface roughness effects in Gaussian superlatticesBanfi, F. et al. | 2001
- 304
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Interface roughness effects in Gaussian superlatticesFrancesco Banfi / Vittorio Bellani / Ignacio Gómez et al. | 2001
- 310
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PAPERS - The influence of a concave corner on the characteristics of deep-sub-micrometre grooved-gate PMOSFETsRen, H. et al. | 2001
- 310
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The influence of a concave corner on the characteristics of deep-sub-micrometre grooved-gate PMOSFETsHongxia Ren / Yue Hao et al. | 2001
- 315
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Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETsA Sleiman / A Di Carlo / L Tocca et al. | 2001
- 315
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PAPERS - Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETsSleiman, A. et al. | 2001
- 320
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Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTeV F Radantsev / A M Yafyasov / V B Bogevolnov et al. | 2001
- 320
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PAPERS - Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTeRadantsev, V.F. et al. | 2001
- 331
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Device model for quantum dot infrared photodetectors and their dark-current characteristicsV Ryzhii / I Khmyrova / V Pipa et al. | 2001
- 331
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PAPERS - Device model for quantum dot infrared photodetectors and their dark-current characteristicsRyzhii, V. et al. | 2001
- 339
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Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)Wei-Chou Wang / Hsi-Jen Pan / Kun-Wei Lin et al. | 2001
- 339
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Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)Wang, W.C. / Pan, H.J. / Lin, K.W. et al. | 2001
- 339
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PAPERS - Characteristics of d-doped InP-InGaAlAs heterojunction bipolar transistors (HBTs)Wang, W.-C. et al. | 2001
- 345
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Raman microspectroscopy analysis of pressure-induced metallization in scratching of siliconYury Gogotsi / Guohui Zhou / Sang-Song Ku et al. | 2001
- 345
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PAPERS - Raman microspectroscopy analysis of pressure-induced metallization in scratching of siliconGogotsi, Y. et al. | 2001
- 353
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PAPERS - Electrical and magnetotransport in AlxIn1-xAsySb1-y-GaSb multilayersLukic-Zrnic, R. et al. | 2001
- 353
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Electrical and magnetotransport in AlxIn1-xAsySb1-y/GaSb multilayersR Lukic-Zrnic / D W Stokes / C L Littler et al. | 2001
- 358
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GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxyN Grandjean / J Massies / I Grzegory et al. | 2001
- 358
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PAPERS - GaN-AlGaN quantum wells for UV emission: Heteroepitaxy versus homoepitaxyGrandjean, N. et al. | 2001
- 362
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PAPERS - Thermal-annealing-induced effects in chemically deposited cobalt sulphide thin filmsEze, F.C. et al. | 2001
- 362
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Thermal-annealing-induced effects in chemically deposited cobalt sulphide thin filmsF C Eze et al. | 2001
- 367
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PAPERS - Determination of the structure of IIIa-ZnIn2S4 using convergent-beam electron diffraction and single-crystal x-ray diffractionLopez-Rivera, S.A. et al. | 2001
- 367
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Determination of the structure of IIIa-ZnIn2S4 using convergent-beam electron diffraction and single-crystal x-ray diffractionS A Lopez-Rivera / A J Mora / D Acosta Najarro et al. | 2001
- 372
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Excess dark currents in HgCdTe p+-n junction diodesV Gopal / S K Singh / R M Mehra et al. | 2001
- 372
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PAPERS - Excess dark currents in HgCdTe p+-n junction diodesGopal, V. et al. | 2001
- 377
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Luminescence study of the disorder in polycrystalline InP thin filmsG Perna / V Capozzi / V Augelli et al. | 2001
- 377
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PAPERS - Luminescence study of the disorder in polycrystalline InP thin filmsPerna, G. et al. | 2001
- 386
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Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETsR Fletcher / V M Pudalov / A D B Radcliffe et al. | 2001
- 386
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PAPERS - Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETsFletcher, R. et al. | 2001
- 394
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PAPERS - Characteristics of information recording on chalcogenide glassy semiconductorsTsendin, K.D. et al. | 2001
- 394
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Characteristics of information recording on chalcogenide glassy semiconductorsK D Tsendin / E A Lebedev / Young-Ho Kim et al. | 2001
- 397
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Modification of the Si amorphization process by in situ ultrasonic treatment during ion implantationB Romanyuk / V Melnik / Ya Olikh et al. | 2001
- 397
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PAPERS - Modification of the Si amorphization process by in situ ultrasonic treatment during ion implantationRomanyuk, B. et al. | 2001
- 402
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PAPERS - Relationship between classical and quantum lifetimes in AlGaN-GaN heterostructuresHarris, J.J. et al. | 2001
- 402
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Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructuresJ J Harris / K J Lee / T Wang et al. | 2001
- 406
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Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wellsM Vehse / P Michler / J Gutowski et al. | 2001
- 406
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PAPERS - Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wellsVehse, M. et al. | 2001
- 413
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MBE growth of (In)GaAsN on GaAs using a constricted DC plasma sourceA E Zhukov / R Zhao / P Specht et al. | 2001
- 413
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PAPERS - MBE growth of (In)GaAsN on GaAs using a constricted DC plasma sourceZhukov, A.E. et al. | 2001
- L21
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Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperatureE Dupont / M Gao / M Buchanan et al. | 2001
- L24
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Optical microscope imaging of semiconductor quantum wellsHyejin Kim / Jaehoon Kim / Heonsu Jeon et al. | 2001
- L28
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Proton implantation for isolation of n-type GaAs layers at different substrate temperaturesS Ahmed / R Gwilliam / B J Sealy et al. | 2001
- R41
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Structural and vibrational properties of carbon impurities in crystalline siliconXiao Yan Zhu / Seung Mi Lee / Jae Yon Kim et al. | 2001
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LETTERS TO THE EDITOR - Optimization of p-doping in GaAs photon-recycling light-emitting diodes operated at low temperatureDupont, E. et al. | 2001
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LETTERS TO THE EDITOR - Proton implantation for isolation of n-type GaAs layers at different substrate temperaturesAhmed, S. et al. | 2001
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LETTERS TO THE EDITOR - Optical microscope imaging of semiconductor quantum wellsKim, H. et al. | 2001
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TOPICAL REVIEW - Structural and vibrational properties of carbon impurities in crystalline siliconZhu, X.Y. et al. | 2001