Vacuum
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Table of contents
- 149
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The use of an oscillating vane gauge to determine gas composition of binary gas mixturesDyksterhuis, FH et al. | 1978
- 155
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Energy spectra of secondary ions and secondary ion emission (SIE) mechanismsTsipinyuk, BA / Veksler, VI et al. | 1979
- 169
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The influence of virtual leaks on the pressure in high and ultra-high vacuum systemsEdwards, D Jr et al. | 1979
- 173
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Thickness monitoring of optical thin filmsThutupalli, GKM et al. | 1978
- 175
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1. Surface temperature of glass substrate heated through GaShigeta, J et al. | 1978
- 177
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2. Ultra-high vacuum and cryogenic feedthrough with 48 pinsIshimaru, H et al. | 1978
- 179
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3. Radiant heating using paraboloidal reflectorsThutupalli, GKM et al. | 1980
- 181
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Activities in vacuum science and technology in the USSR and in Eastern EuropeYarwood, J et al. | 1980
- 185
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3866. Chemisorbed phases of O2 on TiO2 and SrTiO3.. (USA)| 1980
- 185
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3867. ir study of molecules adsorbed on metal surfaces by surface electromagnetic wave spectroscopy. (USA)| 1980
- 185
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3868. Oxidation of tin: an ESCA study.(USA)| 1980
- 185
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3872. Kinetics of thermal desorption and thermal conversion of adsorbates: AES studies. (USA)| 1980
- 185
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3869. LEED structure analysis of a p((2 × 2) chemisorbed layer of CO on Ti(0001). (USA)| 1980
- 185
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3871. Chlorine adsorption on silver surfaces. (USA)| 1980
- 185
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3870. Oxygen uptake on epitaxial PbTe(111) surfaces. (USA)| 1980
- 186
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3879. Problems with turbomolecular pumps in magnetic fields. (USA)| 1980
- 186
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3875. A theory for the cathode mechanism in low-current vacuum arcs, with application to the calculation of erosion rate. (USA)| 1980
- 186
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3878. Properties and use of perfluoro polyethers for vacuum applications. (USA)| 1980
- 186
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3876. Erosion products from the cathode spot region of a copper vacuum arc. (USA)| 1980
- 186
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3877. Suction of solvent vapours with oil-immersed positive displacement pumps operating at an elevated working temperature. (Germany)| 1980
- 186
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3880. Performance of a cryopump—ion pump system. (USA)| 1980
- 186
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3873. Secondary emission from multialkali photocathodes. (USA)| 1980
- 186
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3874. Ionization processes in the positive column of the low-pressure HgAr discharge. (USA)| 1980
- 187
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3883. Precision molecular flow measurement and control for single and multigas systems. (USA)| 1980
- 187
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3890. Debye-like dielectric dispersion properties of evaporated silicon oxide films at very low frequencies. (GB)| 1980
- 187
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3882. Differentially pumped 6 in. metal sealed gate valve. (USA)| 1980
- 187
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3888. Interface states at the GaGaAs interface. (USA)| 1980
- 187
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3887. Glow discharge processing vs bakeout for aluminum storage ring vacuum chambers. (USA)| 1980
- 187
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3885. Fast hydrogen gas injection system for plasma physics experiments. (USA)| 1980
- 187
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3884. Versatile electrical feedthrough for probe measurements o. (USA). (USA)| 1980
- 187
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3886. Fast valve for gas injection into vacuum. (USA)| 1980
- 187
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3881. Simple vacuum gauge using TaN thin films in the pressure range of 105 to 103 Pa. (USA) Pa. (USA)| 1980
- 187
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3889. dc-bias-dependent dielectric dispersion properties of evaporated silicon oxide films. (GB)| 1980
- 188
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3891. Diatomic-complex donor and acceptor model for Ge-doped vapour-grown GaAs. (USA)| 1980
- 188
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3893. Resistivity and microstructure of polycrystalline Au films deposited by rf bias-diode and triode sputtering. (USA)| 1980
- 188
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3899. TFTR vacuum system. (USA)| 1980
- 188
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3896. Diagnostic methods for sputtering plasmas. (USA)| 1980
- 188
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3895. Magnetron sputtering: basic physics and application to cylindrical magnetrons. (USA)| 1980
- 188
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3892. Compact electron-beam source for formation of neutral beams of very low vapour pressure materials. (USA)| 1980
- 188
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3894. Planar magnetron sputtering. (USA)| 1980
- 188
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3897. Plasma diagnostics with electric probes. (USA)| 1980
- 188
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3898. Mass spectrometric solutions to manufacturing problems in the semiconductor industry. (USA)| 1980
- 189
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3905. Analysis of the imaging accuracy in reactive ion etching. (USA)| 1980
- 189
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3907. Investigation of oxide growth in nickel thin films. (Germany)| 1980
- 189
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3900. Turbomolecular pump vacuum system for the Princeton Large Torus. (USA)| 1980
- 189
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3904. Mass spectrometric study of plasma etching. (USA)| 1980
- 189
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3903. Mechanical properties on ion-beam-textured surgical implant alloys. (USA)| 1980
- 189
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3901. Cryosorption pumping of deuterium by MS-5A at temperatures above 4.2 K for fusion reactor applications. (USA)| 1980
- 189
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3906. Profile control by reactive sputter etching. (USA)| 1980
- 189
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3902. Behaviour of sorb-ac wafer pumps in plasma machines. (USA)| 1980
- 190
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3910. Computer controlled ESCA for nondestructive surface characterization utilizing a TV-type position sensitive detector. (USA)| 1980
- 190
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3911. Electrical properties of lead-zirconate-lead-titanate ferroelectric thin films and their composition analysis by Auger electron spectroscopy. (USA)| 1980
- 190
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3914. High resolution Auger sputter profiling study of the effect of phosphorus pileup on the SiSiO2 interface morphology. (USA)| 1980
- 190
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3915. Atomic and electronic structure of semiconductor surfaces. (USA)| 1980
- 190
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3908. Description of a polarized source of He radiation for surface studies. (USA)| 1980
- 190
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3909. Determining the angles of incidence in a LEED experiment. (USA)| 1980
- 190
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3912. Observation of phosphorus pile-up at the SiO2Si interface. (USA)| 1980
- 190
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3913. Electron-solid interactions: their nature and consequences. (USA)| 1980
- 191
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3921. Auger electron spectroscopy studies of I-III-VI2 chalcopyrite compounds. (USA)| 1980
- 191
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3916. Auger and photoelectron study of codeposited sulphur and oxygen layers on silver (111). (USA)| 1980
- 191
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3919. AES and XPS of silicon nitride films of varying refractive indices. (USA)| 1980
- 191
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3920. Solid-state reaction of Ti and sapphire. (USA)| 1980
- 191
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3917. Elastic and inelastic contributions to secondary electron yield structure. (USA)| 1980
- 191
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3918. Combination analysis of metal oxides using ESCA, AES and SIMS. (USA)| 1980
- 193
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3924. Ion nitriding of steels. (USA)| 1980
- 193
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3925. Quasisimultaneous SIMS, AES and XPS investigations of the oxidation of Mo, Ti and Co in the monolayer range. (USA)| 1980
- 193
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3922. Trapping of deuterium implanted into stainless steel at low temperature. (USA)| 1980
- 193
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3928. Purposeful modification by gas adsorption of atomically clean iron surfaces at room temperature and characterization by 21.2 eV photoemission. (USA)| 1980
- 193
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3927. Electronic orbitals of Se bonded to Ni(100). (USA)| 1980
- 193
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3923. Effect of primary ion energy and surface chemistry on the secondary ion yields in low-energy SIMS experiments. (USA)| 1980
- 193
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3929. Determination of adsorbate bond geometry using photoemission. (USA)| 1980
- 193
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3926. Surface resonances and the oxidation of single-crystal aluminum (USA)| 1980
- 194
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3935. Multistep ionization in the positive column of low-pressure NaNe and Ne discharges. (USA)| 1980
- 194
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3934. Flux and fluence dependence of implantation disorder in GaAs substrates. (USA)| 1980
- 194
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3933. Identification of surface radicals by vibration spectroscopy. Reactions of C2HH2,, C2HH4 and H2 on Pt (111). (USA)| 1980
- 194
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3936. Influence of environment on oxide-cathode emission. (Germany)| 1980
- 194
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3931. Molecular-beam apparatus for the study of gas—surface interactions. (USA)| 1980
- 194
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3937. Back-diffusion of electrons in argon in the presence of an electric field. (GB)| 1980
- 194
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3930. Precursor adsorption of O2 on tin and the activation energy for chemisorption. (USA)| 1980
- 194
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3932. A study of the sorption of CO on W and Ni single-crystal surfaces by ion scattering. (USA)| 1980
- 195
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3940. Uhv facility for metal—semiconductor thin-film studies. (USA)| 1980
- 195
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3941. Effects of accumulated film layers on the accuracy of quartz film thickness monitors. (USA)| 1980
- 195
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3943. Thickness dependence of an amorphous overlayer Ge film on the electrical conductivity of ultra-thin Pt films. (USA)| 1980
- 195
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3945. Thin-film NiCr resistor. (USA)| 1980
- 195
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3938. Work functions and structures of alkaline-earth thin films. (USA)| 1980
- 195
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3946. Synthesis and physical properties of superconducting compound films formed by the electron-beam codeposition of the elements. (USA)| 1980
- 195
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3939. Electron trapping in SiO2 due to electron-beam deposition of aluminum. (USA)| 1980
- 195
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3944. Reflectance and structure of evaporated chromium and molybdenum films. (USA)| 1980
- 195
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3942. Electron spectroscopic study of oxygen-plasma-treated polymer surfaces. (USA)| 1980
- 196
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3948. Thickness dependence of structural and electrical properties of Cds films for solar cells. (USA)| 1980
- 196
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3947. Multisource deposition rate control using a mass spectrometer as a sensing element. (USA)| 1980
- 196
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3952. Measurement of plasma discharge characteristics for sputtering applications. (USA)| 1980
- 196
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3951. Optical properties of selectively absorbing metal/insulator composite films. (USA)| 1980
- 196
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3949. Electrochromism in WO3 films with BaO additions. (USA)| 1980
- 196
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3950. Absorption coefficient measurements for vacuum-deposited Cu-ternary thin films. (USA)| 1980
- 196
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3953. Rate and pressure dependence of contaminants in vacuum-deposited aluminum films. (USA)| 1980
- 196
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3954. Correlation between the defect structure and electrical properties of deformed Si surfaces. (USA)| 1980
- 197
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3956. Structural analysis of rf and dc sputtered Nb3GGe thin films containing oxygen. (USA)| 1980
- 197
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3961. Large-scale sputtering of indium-tin oxide. (USA)| 1980
- 197
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3959. Friction and wear results from WC + Co coatings by — dc biased rf sputtering in a helium atmosphere. (USA)| 1980
- 197
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3960. Hydrogen evolution from plasma-deposited amorphous silicon films. (USA)| 1980
- 197
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3955. Improvement of the diffusion barrier properties of rf-sputtered molybdenum. (USA)| 1980
- 197
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3963. Reduction of contamination in triode sputtering systems. (USA)| 1980
- 197
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3957. Niobium nitride thin film SQUID's biased at 20 MHz and 9.2 GHz. (USA)| 1980
- 197
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3958. Structural and compositional characterization of sputter deposited WC + Co films. (USA)| 1980
- 197
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3962. Technology of ion beam sources used in sputtering. (USA)| 1980
- 198
-
3968. Dual laser interferometer for plasma density measurements on large tokamaks. (USA)| 1980
- 198
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3971. Flow rate effects in plasma etching. (USA)| 1980
- 198
-
3972. Reactive ion etching of aluminum and aluminum alloys in an rf plasma containing halogen species. (USA)| 1980
- 198
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3969. Self-magnetic insulation in vacuum for coaxial geometry. (USA)| 1980
- 198
-
3966. Use of a Hall accelerator in the production of negative hydrogen ions in cesium vapour. (USA)| 1980
- 198
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3965. The characterization of a laser-produced negative hydrogen ion plasma. (USA)| 1980
- 198
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3967. High-frequency Stark effect on optically excited atoms of a plasma in the static magnetic field. (USA)| 1980
- 198
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3970. Ion exchange currents in vacuum accelerator tubes. (GB)| 1980
- 198
-
3964. Selective resputtering-induced anisotropy in amorphous films. (USA)| 1980
- 199
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3976. The nitrogen pressure in a vacuum system. (USA)| 1980
- 199
-
3975. Advances in cleaning metal and glass surfaces to micron-level cleanliness. (USA)| 1980
- 199
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3973. Low-temperature interdiffusion in titanium-permalloy thin-film diffusion couples. (USA)| 1980
- 199
-
3974. Thirty cm ion milling source. (USA)| 1980
- 199
-
3979. Some performance tests of a micro-area AES. (USA)| 1980
- 199
-
3981. Energy distributions of sputtered copper neutrals and ions. (USA)| 1980
- 199
-
3980. Application of a double-pass CMA to ion scattering from some actinide materials. (USA)| 1980
- 199
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3977. Enhanced etching of ion-implanted silicon nitride in buffered hydrofluoric acid. (USA)| 1980
- 199
-
3978. Auger study of surface carbon and oxygen on thorium following ion bombardment. (USA)| 1980
- 200
-
3985. Temperature effects in polarized low-energy electron scattering from solids and liquids. (USA)| 1980
- 200
-
3986. LEED analysis of a Cu(110) surface. (USA)| 1980
- 200
-
3989. Some effects of anisotropic vibrations in LEED. (USA)| 1980
- 200
-
3983. Determination of quantitative sputter rates of iron oxide by Auger electron spectroscopy (AES) and ellipsometry. (USA)| 1980
- 200
-
3987. LEED—Auger study of the (110) surface of a 1% SiFe single crystal. (USA)| 1980
- 200
-
3991. X-ray photoelectron spectroscopy with X-ray photons of higher energy. (USA)| 1980
- 200
-
3990. V Au Auger spectra from W(100). (USA)| 1980
- 200
-
3982. Combined low-energy ion scattering and X-ray photoelectron spectroscopy study of Ta2OO5 bombarded by 500–3000 eV He ions. (USA)| 1980
- 200
-
3984. Surface photovoltage experiments on SrTiO3 electrodes. (USA)| 1980
- 200
-
3988. Surface structure and orbital symmetries of (110) surface states of GaAs. (USA)| 1980
- 201
-
3993. Molecular beam epitaxy of GaAs and simultaneous characterization by RHEED, SIMS and AES techniques. (Germany)| 1980
- 201
-
3995. Spreading of Pd layers on W(110) and vicinal planes by surface diffusion. (Germany)| 1980
- 201
-
3994. A multi-crystal u cleava cleavage device for crystal-surface studies in ultra-high vacuum. (Germany)| 1980
- 201
-
3996. Surface segregation of Sn during MBE of n--type GaAs established by SIMS and AES. (USA)| 1980
- 201
-
3992. Surface photovoltage spectroscopy of defects and impurities in trigonal selenium. (USA)| 1980
- 207
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ReportYarwood, J et al. | 1980