Vacuum
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Table of contents
- 491
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1046. Vacuum electronics| 1971
- 491
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1045. Heat- and mass transport phenomena at low temperatures| 1971
- 491
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1043. Design and construction of vacuum systems| 1971
- 491
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1049. Electric field influence on adsorbed silicon atoms| 1971
- 491
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1047. Investigation of the anomalous Senftleben electric effect| 1971
- 491
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1050. Tertiary Bragg scattering in the specular electron reflectivity for the clean, oxygen, and sodium covered nickel (001) surface.| 1971
- 491
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1042. High and ultrahigh vacuum technique in the Industrial Electronics Institute| 1971
- 491
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1048. Method of making a non-sputtering gas absorber| 1971
- 491
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1044. Optical electronics and vacuum technique| 1971
- 492
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1063. Field emission from high-ohmic n-type silicon| 1971
- 492
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1053. Adsorption of oxygen on nickel powders for cathodes of transmitter tubes| 1971
- 492
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1059. Excitation of atoms in slow ion-atom collisions 18. Gaseous Electronics| 1971
- 492
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1064. Cathodes used in the guns of linear accelerators| 1971
- 492
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1052. Surface oxidation phenomena on the faces of germanium single crystals. 4. On the mechanism of the oxidation process| 1971
- 492
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1055. The negative resistance region in the V-A characteristics of Al-Al2O3-Au systems| 1971
- 492
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1057. Evidence for F-band in the electron emission spectrum of MgF2| 1971
- 492
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1060. Ionization constants in the Penning process| 1971
- 492
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1051. Adsorption of gases at low pressures on X-type zeolites| 1971
- 492
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1054. Energy distribution in field emission from krypton covered tungsten| 1971
- 492
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1056. Optically stimulated electron emission from LiF with thermal bleaching| 1971
- 492
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1058. Slowing down of an intense electron beam in a dense plasma 18. Gaseous Electronics| 1971
- 492
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1061. Experimental investigation of efficient retardation of an ion beam in a plasma at ion-acoustic instability| 1971
- 492
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1062. Schlieren method and its application to plasma diagnostics| 1971
- 493
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1075. Experimental investigation of ultrahigh frequency electromagnetic wave radiation from a beam-plasma in strong magnetic field| 1971
- 493
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1074. Ionization waves in nitrogen| 1971
- 493
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1070. Non-stationary thermionic emission from semiconducting cathodes in weak electric fields| 1971
- 493
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1071. Mechanism of the thermionic emission in the ion-radical model of an oxide cathode| 1971
- 493
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1067. Field emission studies on ZnO (0001) and (0001)| 1971
- 493
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1068. The performance of chamber anodes as mechanical suppressors of secondary electron emission| 1971
- 493
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1076. Heating of the cold cathode of an electric arc| 1971
- 493
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1072. Determination of work function of the alloys NiSr, NiBa and NiSrBa| 1971
- 493
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1066. Photoemission studies of V3Si and Cr3Si| 1971
- 493
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1073. Investigation of the defect structure of a real crystal surface by the thermionic emission method| 1971
- 493
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1065. Experimental evidences of the angular dependence of electron excitation in photoemission.| 1971
- 493
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1069. The relationship between oxide structure and the secondary emission properties of emitters| 1971
- 494
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1080. The cathode-plasma interaction of low-pressure arc discharges with oxide cathodes| 1971
- 494
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1079. A laser beam method for the examination of cathode spaces| 1971
- 494
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1083. Ultrahigh vacuum apparatus for evaporation of semiconductors and metals by electron beam| 1971
- 494
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1084. Design problems of vacuum systems in equipment for ion sputtering of materials| 1971
- 494
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1085. Automated pumping system and control of apparatus for vacuum deposition of thin films| 1971
- 494
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1081. Mass-spectrometric investigation of the degassing of polycrystalline tantalum carbide cathodes| 1971
- 494
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1087. Orbitron getter-ion pump| 1971
- 494
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1077. Low-pressure high-frequency discharge in combined high-frequency and static magnetic field close to electron cyclotron resonance| 1971
- 494
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1078. Dependence of cathode properties on neon doping and discharge current| 1971
- 494
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1082. Cathodic sputtering of MgO and AgMg alloy by residual gas ions| 1971
- 494
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1086. A molecular vacuum pump| 1971
- 495
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1089. Evaluation of equipment for ion-plasma sputtering by electrical discharge pumps| 1971
- 495
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1095. Calibration of vacuum gauges| 1971
- 495
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1090. A vacuum gauge| 1971
- 495
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1097. Performance of a modified buried collector gauge| 1971
- 495
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1096. Prism mass spectrometer with energy focusing| 1971
- 495
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1088. Magnetic discharge pumps with cathodes of porous titanium| 1971
- 495
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1092. Semiconductor electrometer amplifiers| 1971
- 495
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1094. Chromatograph coupling to mass spectrometer| 1971
- 495
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1093. Three-dimensional quadrupole mass spectrometer with ion storage| 1971
- 495
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1091. An ionization gauge with plane electrode system and emission current modulation| 1971
- 496
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1103. A vacuum seal| 1971
- 496
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1109. A valve system for vacuum installations| 1971
- 496
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1101. A vacuum seal| 1971
- 496
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1108. Design of elements with annular ceramic-to-metal seals| 1971
- 496
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1104. Motion feedthrough| 1971
- 496
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1107. Design of non-compressed metal-to-ceramic seals with defined resistance against temperature variations| 1971
- 496
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1105. An automatic vacuum tap| 1971
- 496
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1098. Trap| 1971
- 496
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1100. Insertion piece for sealing off vacuum apparatus| 1971
- 496
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1106. Large-size high-vacuum joints| 1971
- 496
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1099. A fine-displacement mechanism| 1971
- 496
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1102. A vacuum plug tag| 1971
- 497
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1116. Miniature equipment for liquid nitrogen manufacture| 1971
- 497
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1118. Apparatus for vacuum-depositing coatings| 1971
- 497
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1112. Two constructions of load lock arrangements for industrial high vacuum evaporators| 1971
- 497
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1110. Method of admitting hydrogen to a vacuum system| 1971
- 497
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1111. High-speed gas valve| 1971
- 497
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1114. A priming vacuum trap| 1971
- 497
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1115. Nitrogen-free crystals for liquid helium with high-vacuum insulation| 1971
- 497
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1119. Device for the vacuum-evaporation of metals| 1971
- 497
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1117. Method of measuring and regulating temperature| 1971
- 497
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1120. Classification of photoemission films| 1971
- 497
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1113. Introduction of water vapour into vacuum systems and the adsorption by the walls| 1971
- 497
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1121. Nucleation of epitaxial films by gas-transport technique| 1971
- 498
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1137. Growth of selenium single crystal films| 1971
- 498
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1124. Properties of silicon nitride thin films prepared by cathodic sputtering| 1971
- 498
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1130. Some factors of the temperature dependence of the resistance of thin bismuth films| 1971
- 498
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1131. Effect of thickness of supercritical permalloy films on their domain structure| 1971
- 498
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1135. Determination of hardness of thin films deposited in vacuum| 1971
- 498
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1125. Design of shutter windows in multi-chambers lines with container transport of substrates| 1971
- 498
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1122. Methods for checking defect structure of silicon dioxide films on silicon plates| 1971
- 498
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1123. Investigation of porosity of silicon films obtained by thermal oxidations of silicon| 1971
- 498
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1128. Point defect annealing in uniaxial permalloy thin films irradiated with 2 MeV electrons| 1971
- 498
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1136. Recystallization of thin films of semiconducting compounds typeAIIBVI deposited in vacuum| 1971
- 498
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1129. Reflection and adsorption spectra of GaAsxSb1−x solid solutions| 1971
- 498
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1133. Non-destructive determination of film thickness on silicon substrate| 1971
- 498
-
1132. Epitaxial growth of LiF layers on ionic crystals| 1971
- 498
-
1126. Trap distribution in a copper phthalocyanine thin film from SCLC-measurements| 1971
- 498
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1127. In-situ-observations of the sputtering process in electron microscope| 1971
- 498
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1134. Arrangement for checking of thichness of films, deposited by vacuum evaporation, by means of the reflection coefficient| 1971
- 499
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1151. Some problems of performance in the film deposition by evaporation and condensation in vacuum| 1971
- 499
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1144. The effect of antimony in magneto-optic thin films on manganese bismuth base. I. Film preparation and studies on the formation process| 1971
- 499
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1150. On the maximum evaporation rate from metal surfaces| 1971
- 499
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1141. Reflection high energy electron diffraction patterns of twinned fcc films| 1971
- 499
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1145. Deposition of high-ohmic films in a three-electrode system| 1971
- 499
-
1147. Investigations of processes of manufacture and application of dielectric films on the basis of aluminim nitride in MIS transistors| 1971
- 499
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1146. Measuring and analytical methods for ferromagnetic films| 1971
- 499
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1143. The effect of antimony in magneto-optic films on manganese bismuth base. II. Measurement of some magnetic and magneto-optic properties| 1971
- 499
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1148. Complex investigation of silicon nitride films deposited on silicon by pyrolysis in vacuum| 1971
- 499
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1149. Evaluation of molecular weight of thin layer polymerized in the gas phase| 1971
- 499
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1140. TSEE spectra of different produced SiO2 films| 1971
- 499
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1152. Utilization of thin silicon polymer films in the manufacture of cryoton circuiits| 1971
- 499
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V A Tolomasov et al, kristalogr, 15 (6), 1970, 1233–1238 (in Russian).| 1971
- 499
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1138. Molecular composition of vapours in silicon epitaxial processes| 1971
- 499
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1142. Nucleation, growth and texture of luminescent thin films of cadmium tungstate prepared by vacuum evaporation| 1971
- 500
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1153. Basic requirements for manufacturing thin-film elements by ion sputtering| 1971
- 500
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1157. Low TCR Kanthal resistive films for hybrids IC's| 1971
- 500
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1161. Development of secondary electron UHF discharge| 1971
- 500
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1156. Isothermal effusion for vacuum deposition of solid solutions| 1971
- 500
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1162. Long life anode materials for power pulsed electron devices| 1971
- 500
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1159. Problems of development of emission electronics in the USSR| 1971
- 500
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1154. Solid solution effects in thin aluminium films| 1971
- 500
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1164. Experimental investigation of the Knudsen mode of operation of a thermionic energy converter| 1971
- 500
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1163. Caesium diode with ion and electron generation on anode| 1971
- 500
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1160. Electrodes for high-current switches| 1971
- 500
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1155. Composition gradients in NiFe alloys films produced by vapour deposition from a tungsten boat| 1971
- 500
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1158. Method of preparing indirectly-heated cathodes| 1971
- 501
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1169. Large metal-ceramic group for high-power transmitting tubes| 1971
- 501
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1172. Test methods in receiver tube manufacture| 1971
- 501
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1179. Dependence of transport coefficients on plasma parameters in the Tohamak installation| 1971
- 501
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1167. Conditions for tangential secondary electron ultrahigh frequency discharge formation| 1971
- 501
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1168. Vacuum-discharge initiation by a micro-particle| 1971
- 501
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1177. Photoelectron multiplier for recording coherent radiation| 1971
- 501
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1175. Operation of a thermionic converter with elongated cathode| 1971
- 501
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1166. Experimental investigation of the arc regime of a thermionic energy converter at low caesium pressures| 1971
- 501
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1170. Residual gases in vacuum tube with cold cathodes| 1971
- 501
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1165. Some features of caesium discharge plasma caused by near electrode phenomena| 1971
- 501
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1171. Electrical strenght of pulsed modulator tetrodes with copper chamber anodes| 1971
- 501
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1176. Low-voltage arc in a thermionic converter at low caesium pressure| 1971
- 501
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1173. Calculation of thermal regime of some components of electro-vacuum devices| 1971
- 501
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1174. Features of construction and technology of envelope manufacture for electro-vacuum devices with high mechanical stability| 1971
- 501
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1178. Miniature channel photoelectron multipliers| 1971
- 502
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1180. Helium negative ion source for a change exchange electrostatic accelerator| 1971
- 502
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1186. Method of measuring the rigidity of the tubular cores of heated electronic-valve cathodes| 1971
- 502
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1189. Method of preparing electronic devices| 1971
- 502
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1183. Utilization of thin organic layers in nuclear physics experiments| 1971
- 502
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1181. A source of polarized negative deuterium ions for a charge exchange electrostatic accelerator| 1971
- 502
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1190. Effects of surface disorder, various surface structures of chemisorbed gases and carbon on helium atomic beam scattering from the (100) surface of platinum| 1971
- 502
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1192. Chemisorptive luminescence: oxygen on Si (111) surfaces| 1971
- 502
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1187. Cathode| 1971
- 502
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1182. Arrangement for continuous pumping of gas through a proportional counter at various pressures| 1971
- 502
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1191. New method for the detection of atomic oxygen beams| 1971
- 502
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1184. Field electron gun for linear electron accelator| 1971
- 502
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1185. A long-lived radio-frequency ion source of low consumption for pressurized accelarators| 1971
- 502
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1188. A cathode for electrical-vacuum devices| 1971
- 503
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1207. Thermochemistry of liquid metal-gas crucible reactions in vacuum| 1971
- 503
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1196. Anomalous angular characteristics of the shadows on bismuth proton micrographs| 1971
- 503
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1202. Nickel alloys with calcium and reduced carbon content for oxide cathode cores| 1971
- 503
-
1200. Theory for the energy distribution of secondary electrons| 1971
- 503
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1201. A vacuum-melting installation| 1971
- 503
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1208. Degassing kinetics of molten metals in vacuum| 1971
- 503
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1193. Magnetic properties of CeB6, PrB6, EuB6 and GdB6| 1971
- 503
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1194. Modification of the mass spectrometer type MI-1305 for operation as a chromatograph detector| 1971
- 503
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1204. Preparation of LiF crystals for ultraviolet optics| 1971
- 503
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1197. Interaction of slow electrons with adsorbed organic molecules| 1971
- 503
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1199. High-frequency source of ions of heavy elements| 1971
- 503
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1203. Size checking of LiF crystals grown in vacuum by the Kiropulos method| 1971
- 503
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1198. Layer titanium hydride injector| 1971
- 503
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1195. Channelling effects in blocking phenomena| 1971
- 503
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1205. The relation between the grain and subgrain size in nickel| 1971
- 503
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1206. Electrodynamic levitation of solid particles| 1971
- 504
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1211. Vacuum heat treating using plasma EB| 1971
- 504
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1212. Vapour deposition by liquid phase sputtering| 1971
- 504
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1218. Purification of vanadium by vacuum melting| 1971
- 504
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1210. Computer simulation in metals research| 1971
- 504
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1216. Formation of superconducting Nb3Al and Nb3AlGe films| 1971
- 504
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1209. Kinetics and thermodynamics in continuous electron-beam evaporation of binary alloys| 1971
- 504
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1215. Vapour generation and deposition of zinc at high rates| 1971
- 504
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1214. Metallurgical characteristics of titanium-alloy foil prepared by electron-beam evaporation| 1971
- 504
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1213. Superconducting transition temperatures of vapour-deposited niobium nitride| 1971
- 504
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1217. Theory and practice of electroslag melting| 1971
- 505
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1225. Quench atomization of iron-base alloys into metal powders| 1971
- 505
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1229. Vacuum stream degassing of molten aluminium| 1971
- 505
-
1223. Creep-rupture properties of C-129Y in vacuum| 1971
- 505
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1219. Application of static metallic adhesion data to friction| 1971
- 505
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1222. Electron-beam float zone and vacuum purification of vanadium| 1971
- 505
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1224. An investigation of heat flow in undirectional solidification of vacuum-cast airfoils| 1971
- 505
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1226. Refining and decarburizing steel-degassing process in the melting practice of alloys steels| 1971
- 505
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1220. Behaviour of refractory metal surfaces in ultrahigh vacuum as observed by LEED and Auger electron spectroscopy| 1971
- 505
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1228. Vacuum-carbon deoxidation of iron melts in a 70 per cent alumina brick crucible| 1971
- 505
-
1221. Gas-metal reactions of refractory metals at high temperature in high vacuum| 1971
- 505
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1227. Deoxidation of stainless steel by carbon in laboratory-scale vacuum induction melting| 1971
- 506
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1234. A vacuum sealing grease| 1971
- 506
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1231. Design and operation of a one-chamber vacuum furnace for dewax, presinter, and sinter of cemented carbide| 1971
- 506
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1236. Method of obtaining low and very low partial oxygen pressures| 1971
- 506
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1238. Outgassing of nuclear rocket fuel elements| 1971
- 506
-
1232. Rheological properties of electro-vacuum glass S 88-1| 1971
- 506
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1233. Glass stable with respect to caesium vapour at temperatures up to 650°C| 1971
- 506
-
1235. Theoretical investigation of the relationship between size of elements of glass- and ceramic-to-metal seals and the magnitude of isothermal stresses| 1971
- 506
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1237. Investigation of the temperature dependence of the outgassing rates of molybdenum and yttrium with different degrees of cleanliness in ultrahigh vacuum| 1971
- 506
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1230. Removal of hydrogen by pouring molten steel in vacuum| 1971
- 507
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Author index of abstracts| 1971