Journal of vacuum science and technology / B
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 3219
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Optimizing the reactive ion etching of p-InGaP with CH4- H2 by a two-level fractional factorial design processChan, R.H. et al. | 1996
- 3226
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Reactive ion etching of GaSb and GaAlSb using SiCl4Ou, S.S. et al. | 1996
- 3230
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Chemical dry etching mechanisms of GaAs surface by HCl and Cl2Senga, Takehito et al. | 1996
- 3239
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Method for the determination of the angular dependence during dry etchingHedlund, C. et al. | 1996
- 3244
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Low resistance (~1 x 10-6 O cm2) Au-Ge-Pd Ohmic contact to n-Al0.5In0.5PHao, P.H. et al. | 1996
- 3248
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0.1 mm AlGaAs-lnGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metalTanabe, M. et al. | 1996
- 3252
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Interfacial reactions and ohmic contact formation in the Ni-Al-6H SiC systemMarinova, Ts et al. | 1996
- 3257
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Low resistivity Al-RE (RE=La, Pr, and Nd) alloy thin films with high thermal stability for thin-film-transistor interconnectsTakayama, Shinji et al. | 1996
- 3263
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Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallizationMin, Kyung-Hoon et al. | 1996
- 3270
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Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applicationsNichols, C.A. et al. | 1996
- 3276
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High selectivity plasma etching of silicon dioxide with a dual frequency 27-2 MHz capacitive radio frequency dischargeTsai, W. et al. | 1996
- 3283
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Plasma etching process development using in situ optical emission and ellipsometryLee, J.T.C. et al. | 1996
- 3291
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Effects of etch products and surface oxidation on profile evolution during electron cyclotron resonance plasma etching of poly-SiTuda, Mutumi et al. | 1996
- 3299
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Effect of silicon substrate microroughness on gate oxide qualityHegde, Rama I. et al. | 1996
- 3305
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Characterization of silicon nitride films formed by synchrotron radiation-excited chemical vapor depositionKyuragi, Hakaru et al. | 1996
- 3316
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A new theory for silicon oxidationPeng, Kuang-Yao et al. | 1996
- 3321
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Long term reproducibility of secondary ion mass spectroscopy measurements in siliconChu, Paul K. et al. | 1996
- 3327
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Study of the function of fluorine anions in development-free vapor photolithographyLu, Jianping et al. | 1996
- 3332
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Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabricationGogolides, Evangelos et al. | 1996
- 3339
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Interferometric lithography of sub-micrometer sparse hole arrays for field-emission display applicationsChen, Xiaolan et al. | 1996
- 3350
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Photo-Hall studies of modulation-doped field-effect transistors with short-period superlattice channels rather than alloy channelsMoreira, M.V.B. et al. | 1996
- 3357
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Emission current saturation of the p-type silicon gated field emitter arrayHirano, Takayuki et al. | 1996
- 3361
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High resolution patterning of thin magnetic films to produce ultrasmall magnetic elementsKhamsehpour, B. et al. | 1996
- 3367
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In situ observation of the tip shape of AuGe liquid alloy ion sources using a high voltage transmission electron microscopeDriesel, W. et al. | 1996
- 3381
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High speed layer by layer patterning of phthalocyanine Langmuir-Blodgett films by the atomic force microscopeBourgoin, J.P. et al. | 1996
- 3386
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Improved properties of "pure" Langmuir films of tetra(cumylphenoxy) phthalocyaninesXu, L. et al. | 1996
- 3391
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Ultrafine pattern x-ray mask fabricated using the sidewall methodXia, A.D. et al. | 1996
- 3393
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Comment on "Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy" (J. Vac. Sci. Technol. B 13, 1095 (1995))Takata, Keiji et al. | 1996
- 3395
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Anisotropy in resistivity of MoNx films at 4.2 KKominami, Shin'ya et al. | 1996
- 3400
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Selective wet etching of lattice-matched InGaAs-InAlAs on InP and metamorphic InGaAs-InAlAs on GaAs using succinic acid-hydrogen peroxide solutionFourre, Hervé et al. | 1996
- 3403
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Erratum: Magnetic behavior of FexNi(1-x) and CoxNi(1-x) pseudomorphic films (J. Vac. Sci. Technol. B 14, 3189 (1996))Wu, S.Z. et al. | 1996
- 3404
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CUMULATIVE AUTHOR INDEX| 1996