Applied surface science
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Photoemission studies of barrier heights in metal-semiconductor interfaces and heterojunctionsHorn, K. et al. | 2000
- 12
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Photoemission investigation of MBE-grown HgSe/CdSe heterostructuresEich, D. / Hubner, D. / Ortner, K. et al. | 2000
- 17
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Tracing the valence band maximum during epitaxial growth of HfS2 on WSe2Kreis, C. / Traving, M. / Adelung, R. et al. | 2000
- 23
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Polarization fields in nitride nanostructures: 10 points to think aboutBernardini, F. / Fiorentini, V. et al. | 2000
- 30
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Electric field effects in ZnSe/BeTe superlatticesWagner, V. / Becker, M. / Weber, M. et al. | 2000
- 35
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Absorption and emission spectra of InAs/Ga1-xInxSb/AlSb nanostructures for infrared applicationsKitchin, M. R. / Shaw, M. J. / Corbin, E. et al. | 2000
- 40
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Spin-polarized electron transport and emission from strained superlatticesAmbrajei, A. N. / Clendenin, J. E. / Egorov, A. Y. et al. | 2000
- 45
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Electron correlation effects at semiconductor interfaces: a comparison of the Si(111)-3x3 and the Sn/Ge(111)-3x3 reconstructionsPerez, R. / Ortega, J. / Flores, F. et al. | 2000
- 51
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Si-TiO2 interface evolution at prolonged annealing in low vacuum or N2O ambientErkov, V. G. / Devyatova, S. F. / Molodstova, E. L. et al. | 2000
- 57
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Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite latticesKolesnikov, A. V. / Vasilenko, A. P. / Trukhanov, E. M. et al. | 2000
- 61
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Low-energy argon ion beam treatment of a-Si:H/Si structurePincik, E. / Jergel, M. / Gmucova, K. et al. | 2000
- 67
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On light-related electrical properties of porous silicon/crystalline silicon structurePincik, E. / Bartos, J. / Jergel, M. et al. | 2000
- 72
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Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfacesPincik, E. / Jergel, M. / Kucera, M. et al. | 2000
- 77
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Optical properties of as grown and ion implanted (Ar+,N2+,a) GaAs nipi doping superlatticesKunert, H. W. / Malherbe, J. B. / Brink, D. J. et al. | 2000
- 82
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Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometerKolesnikov, A. V. / Vasilenko, A. P. / Trukhanov, E. M. et al. | 2000
- 87
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Hexagonal InN/sapphire heterostructures: interplay of interface and layer propertiesMamutin, V. V. / Shubina, T. V. / Vekshin, V. A. et al. | 2000
- 92
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Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InPHasegawa, H. / Sato, T. / Kasai, S. et al. | 2000
- 97
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Formation, geometric and electronic properties of microrelief Au-GaAs interfacesDmitruk, N. L. / Mamykin, S. V. / Rengevych, O. V. et al. | 2000
- 103
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Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currentsReuter, K. / de Andres, P. L. / Garcia-Vidal, F. J. et al. | 2000
- 108
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Ballistic-electron emission microscopy and internal photoemission in Au/Si-structures - a comparisonBlauarmel, A. / Brauer, M. / Hoffmann, V. et al. | 2000
- 113
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Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111)3x3/30 LEED patternGalkin, N. G. / Konchenko, A. V. / Goroshko, D. L. et al. | 2000
- 119
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Interfacial reaction of erbium on homoepitaxial diamond (100) filmsSaby, C. / Nguyen Tan, T. A. / Pruvost, F. et al. | 2000
- 125
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Formation of the Co/Si(111)7x7 interface: AES- and EELS-studyPlusnin, N. I. / Milenin, A. P. / Prihod'ko, D. P. et al. | 2000
- 130
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Relaxation processes in Au-TiB2/GaAs structures under short-term thermal annealingKryshtab, T. G. / Lytvyn, O. S. / Lytvyn, P. M. et al. | 2000
- 137
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Structure of Fe layers grown on InAs(100)Teodorescu, C. M. / Chevrier, F. / Richter, C. et al. | 2000
- 143
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Study of Fe deposition upon a layered compound: GaSeZerrouki, M. / Lacharme, J. P. / Ghamnia, M. et al. | 2000
- 149
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Initial processes of a Ni adatom on the Si(001) surface: a first-principles studyHigai, S. i. / Ohno, T. et al. | 2000
- 154
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Structure and magnetic properties of electrodeposited Co films onto Si(100)Cerisier, M. / Attenborough, K. / Celis, J. P. et al. | 2000
- 160
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Thin Ag film formation onto Si/SiO2 substrateIida, S. / Okui, T. / Tai, T. et al. | 2000
- 165
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Reconstructions of GaN and InGaN surfacesFeenstra, R. M. / Chen, H. / Ramachandran, V. et al. | 2000
- 173
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The morphology of high-index GaAs surfacesJacobi, K. / Geelhaar, L. / Marquez, J. et al. | 2000
- 179
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(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signaturesSchmidt, W. G. / Bernholc, J. / Bechstedt, F. et al. | 2000
- 185
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Raman spectroscopy of surface phonons on Sb-terminated Si(001)Hinrichs, K. / Power, J. R. / Esser, N. et al. | 2000
- 190
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Atomic structure and composition of the P-rich InP(001) surfacesVogt, P. / Frisch, A. M. / Hannappel, T. et al. | 2000
- 196
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X-ray standing wave study of wet-etch sulphur-treated InP(100) surfacesMcGovern, I. T. / Koebbel, A. / Leslie, A. et al. | 2000
- 201
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Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001)Preobrajenski, A. B. / Chasse, T. et al. | 2000
- 209
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Surface structure and local bonding on the Si(111)-Ce surfaceGoshtasbi Rad, M. / Gothelid, M. / Hirschauer, B. et al. | 2000
- 214
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Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysisDe Padova, P. / Larciprete, R. / Quaresima, C. et al. | 2000
- 220
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Scanning tunneling microscopy evidence of background contamination-induced 2x1 ordering of the b-SiC(100) c(4x2) surfaceDouillard, L. / Fauchoux, O. / Aristov, V. et al. | 2000
- 224
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Angle Resolved Photoemission Spectroscopy of the InP(001) surfaceFrisch, A. M. / Vogt, P. / Visbeck, S. et al. | 2000
- 231
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Photoemission study of Gd atoms on CdTe(100) surfaceGuziewicz, E. / Szamota-Sadowska, K. / Kowalski, B. J. et al. | 2000
- 237
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Oxide formation on the CdTe(111)A (1x1) surfaceKowalski, B. J. / Or&lz.shtsls / owski, B. A. et al. | 2000
- 242
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Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxyYang, J. / Yasuda, H. / Wang, S. et al. | 2000
- 247
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Surface morphology of MnAs overlayers grown by MBE on GaAs(111)B substratesSadowski, J. / Kanski, J. / Ilver, L. et al. | 2000
- 253
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Atomic hydrogen cleaning, nitriding and annealing InSb (100)Haworth, L. / Lu, J. / Westwood, D. I. et al. | 2000
- 259
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Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAsZsebok, O. / Thordson, J. V. / Ilver, L. et al. | 2000
- 263
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Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfacesAristov, V. Y. / Zhilin, V. M. / Grupp, C. et al. | 2000
- 268
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Si surface band-gap shift on top of buried Ge quantum dotsKlemenc, M. / Meyer, T. / von Kanel, H. et al. | 2000
- 273
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Simulation of excitonic spectra in electric field to characterize the quality of low dimensional structuresLazarenkova, O. L. / Pikhtin, A. N. et al. | 2000
- 278
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Excitons as a probe of interface morphology in Cd(Zn)Se/ZnSe heterostructuresToropov, A. A. / Shubina, T. V. / Sorokin, S. V. et al. | 2000
- 284
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Characterization of surface nanostructures by STM light emission: individual GaAs/AlGaAs quantum wellsUshioda, S. / Tsuruoka, T. / Ohizumi, Y. et al. | 2000
- 290
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Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross-sectional Atomic Force MicroscopyLelarge, F. / Priester, C. / Constantin, C. et al. | 2000
- 295
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STM study of the charged defects on the Ge(111)-c(2x8) surface and the effect of density of states on defect-induced perturbationLee, G. / Mai, H. / Chizhov, I. et al. | 2000
- 300
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Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wellsRebane, Y. T. / Shreter, Y. G. / Wang, W. N. et al. | 2000
- 304
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Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ion implanted AlxGa1-xAs/GaAs quantum wellsKunert, H. W. et al. | 2000
- 309
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Direct observation of interface effects of thin AlAs(100) layers buried in GaAsAgui, A. / Sathe, C. / Guo, J. H. et al. | 2000
- 313
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Electronic structure of ultrathin AlAs(100) layers buried in GaAsMankefors, S. et al. | 2000
- 317
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Nanocrystals at MBE-grown GaN/GaAs(001) interfacesZsebok, O. / Thordson, J. V. / Ilver, L. et al. | 2000
- 322
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Formation of self-organized CdSe quantum dots on ZnSe(100) surfaces by molecular beam epitaxyMaehashi, K. / Yasui, N. / Murase, Y. et al. | 2000
- 326
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Strained InAs nanostructures self-organised on high-index InP(113)BBrault, J. / Gendry, M. / Grenet, G. et al. | 2000
- 332
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Formation and stability of II-VI self-assembled quantum dots revealed by in situ atomic force microscopyKratzert, P. R. / Rabe, M. / Henneberger, F. et al. | 2000
- 336
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Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wellsAdib, A. B. / de Sousa, J. S. / Farias, G. A. et al. | 2000
- 341
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Spatial distribution of Cd in CdSe/ZnSe superlattices studied by X-ray diffractionKyutt, R. N. / Toropov, A. A. / Shubina, T. V. et al. | 2000
- 346
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The peculiarity of ultra cold neutrons scattering on the superlattice of non-equilibrium magnetization in ferromagnetic semiconductorsSemchuk, O. Y. et al. | 2000
- 349
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Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous siliconKorsunskaya, N. E. / Kaganovich, E. B. / Khomenkova, L. Y. et al. | 2000
- 354
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Organic semiconductor interfaces: electronic structure and transport propertiesHill, I. G. / Milliron, D. / Schwartz, J. et al. | 2000
- 363
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Substrate influence on the ordering of organic submonolayers: a comparative study of PTCDA on Ag(110) and Ag(111) using HREELSTautz, F. S. / Sloboshanin, S. / Shklover, V. et al. | 2000
- 370
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First-principle analysis of the dissociative adsorption of formic acid on rutile TiO2(110)Kackell, P. / Terakura, K. et al. | 2000
- 376
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The interface formation of PTCDA on Se-modified GaAs(100) surfacesPark, S. / Querner, T. / Kampen, T. U. et al. | 2000
- 380
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An experimental study of poly(9,9-dioctyl-fluorene) and its interface with Li and LiF.Greczynski, G. / Fahlman, M. / Salaneck, W. R. et al. | 2000
- 387
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Optical characterisation of PTCDA films grown on passivated semiconductor substratesKampen, T. U. / Salvan, G. / Friedrich, M. et al. | 2000
- 392
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The status and promise of compliant substrate technologyBrown, A. S. / Doolittle, W. A. et al. | 2000
- 399
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Initial stage of the Bi surfactant-mediated growth of Ge on Si(111): a structural studySchmidt, T. / Falta, J. / Materlik, G. et al. | 2000
- 406
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Patterned growth on high-index GaAs (311)A substratesNotzel, R. / Ploog, K. H. et al. | 2000
- 413
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Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surfaceYasuda, H. / Matsukura, F. / Ohno, Y. et al. | 2000
- 418
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Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)Haworth, L. / Lu, J. / Westwood, D. I. et al. | 2000
- 423
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Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBEZsebok, O. / Thordson, J. V. / Zhao, Q. X. et al. | 2000
- 428
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Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)Peto, G. / Horvath, Z. E. / Kanski, J. et al. | 2000
- 433
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Diffusion of Ga on the GaAs (113) surface in the [110] direction during MOVPE growthPristovsek, M. / Menhal, H. / Zettler, J. T. et al. | 2000
- 437
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Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfacesRudolph, R. / Pettenkofer, C. / Klein, A. et al. | 2000
- 442
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Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse stepsCordier, Y. / Ferre, D. / Chauveau, J. M. et al. | 2000
- 446
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Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substratesWallart, X. / Mollot, F. et al. | 2000
- 451
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Formation energy of threefold coordinated oxygen in SiO2 systemsPasquarello, A. et al. | 2000
- 455
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Atomic structure of SiO2 at SiO2/Si interfacesHirose, K. / Nohira, H. / Sakano, K. et al. | 2000
- 460
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Detection of interface states correlated with SiO2/Si(111) interface structuresWatanabe, N. / Teramoto, Y. / Omura, A. et al. | 2000
- 465
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The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on siliconLu, H. C. / Gusev, E. / Yasuda, N. et al. | 2000
- 469
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Strong exciton energy blue shift in annealed Si/SiO2 single quantum wellsde Sousa, J. S. / Wang, H. / Farias, G. A. et al. | 2000
- 475
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Defect structure relaxation process in the Si-SiO2 systemKropman, D. / Abru, U. / Karner, T. et al. | 2000
- 480
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The Auger transistor based on the Al-SiO2-n-Si heterostructureOstroumova, E. V. / Rogachev, A. A. et al. | 2000
- 485
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Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfacesNiimi, H. / Yang, H. / Lucovsky, G. et al. | 2000
- 492
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Influence of tetraethylammonium bromide on phase inhomogeneity of disperse vanadium dioxide particles in matrix of polyethylene glycolTurov, V. V. / Gorbik, P. P. / Ogenko, V. M. et al. | 2000
- 497
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Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfacesLucovsky, G. / Phillips, J. C. et al. | 2000
- 504
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Characterisation of the BaTiO3/p-Si interface and applicationsEvangelou, E. K. / Konofaos, N. / Craven, M. R. et al. | 2000
- 508
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Fermi level-dependent defect formation at Cu(In,Ga)Se2 interfacesKlein, A. / Fritsche, J. / Jaegermann, W. et al. | 2000
- 513
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Charge redistribution at GaN-Ga2O3 interfaces: a microscopic mechanism for low defect density interfaces in remote-plasma-processed MOS devices prepared on polar GaN facesTherrien, R. / Lucovsky, G. / Davis, R. et al. | 2000
- 520
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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contactsDmitruk, N. L. / Ermolovich, I. B. / Konakova, R. V. et al. | 2000
- 526
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In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layerTakahashi, H. / Hasegawa, H. et al. | 2000
- 532
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p-n Junction formed in structures with macro-porous siliconGrigoras, K. / Jasutis, V. / Pacebutas, V. et al. | 2000