IEEE transactions on electron devices
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1333
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Table of Contents| 2024
- 1340
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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power ApplicationsMeneghini, Matteo / Ng, Geok Ing / Medjdoub, Farid et al. | 2024
- 1344
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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and PerspectivesBuffolo, M. / Favero, D. / Marcuzzi, A. et al. | 2024
- 1356
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A Future Outlook of Power Devices From the Viewpoint of Power Electronics TrendsSaito, Wataru et al. | 2024
- 1365
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GaN Power Integration Technology and Its Future ProspectsWei, Jin / Zheng, Zheyang / Tang, Gaofei et al. | 2024
- 1383
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High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal ApplicationsZhou, Yuwei / Mi, Minhan / Gong, Can et al. | 2024
- 1387
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Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTsTang, Xiaoqiang / Raffo, Antonio / Crupi, Giovanni et al. | 2024
- 1396
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Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and ReliabilityZanoni, Enrico / De Santi, Carlo / Gao, Zhan et al. | 2024
- 1408
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15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 WKawasaki, Seiya / Kumabe, Takeru / Deki, Manato et al. | 2024
- 1416
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Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion ProcessSarkar, Biplab / Wang, Jia / Watanabe, Hirotaka et al. | 2024
- 1421
-
Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold VoltagesWang, Pengfei / Mi, Minhan / An, Sirui et al. | 2024
- 1428
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AlN Thin-Film Vacuum Ultraviolet Photodetector With High Operating Temperature and High Rejection RatioZhang, Peixuan / Liu, Kewei / Zhu, Yongxue et al. | 2024
- 1433
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Investigation of Highly Efficient Dual-Band Photodetector Performance of Spin-on-Doping (SOD) Grown p-Type Phosphorus Doped ZnO (P:ZnO)/n-Ga2O3 Heterojunction DeviceMishra, Madhuri / Saha, Rajib / Saha, Archishman et al. | 2024
- 1441
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A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization EffectsRen, Kailin / Shi, Yang / Zou, Xiazhi et al. | 2024
- 1448
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Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTsChen, Yilin / Zhu, Qing / Zhang, Meng et al. | 2024
- 1455
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Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMTJiang, Xi / Jiang, Tao / Zhang, Shijie et al. | 2024
- 1464
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Surface Pretreatment by Low-Temperature O2 Gas Annealing for Performance Improvement in Pt/β-Ga2O3 Schottky Barrier DiodesHu, Haodong / Wang, Yibo / Jia, Xiaole et al. | 2024
- 1469
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Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device StabilityZhang, Haochen / Hu, Kunpeng / Sun, Yue et al. | 2024
- 1474
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p-Type Behavior of Carbon on n-Type GaN Schottky-Barrier Diodes Doped by Neutron Transmutation EffectsKim, Jeongwoo / Kwon, Jae W. et al. | 2024
- 1481
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Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN DevicesWang, Yifan / Porter, Matthew / Xiao, Ming et al. | 2024
- 1488
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Route Toward Commercially Manufacturable Vertical GaN DevicesGeens, Karen / Borga, M. / Khan, M. A. et al. | 2024
- 1494
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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure AnnealingStein, Shane R. / Khachariya, Dolar / Mecouch, Will et al. | 2024
- 1502
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P-Type NiO Junction Termination Extension Grown by Pulsed Laser Deposition in Vertical β-Ga2O3 Schottky Barrier DiodeHong, Yuehua / Zheng, Xuefeng / Zhang, Hao et al. | 2024
- 1508
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Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field PlateYu, Hengyu / Wang, Jun / Zhang, Jinyi et al. | 2024
- 1513
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Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and OpportunitiesZhou, Jingbo / Zhou, Xuanze / Liu, Qi et al. | 2024
- 1523
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660-V/1.99-mΩ.cm2 Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain LayersShen, Jingyu / Yang, Chao / Jing, Liang et al. | 2024
- 1529
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Unveiling Thermal Effects on Sn-Doped β-Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power ElectronicsYadav, Manoj K. / Mondal, Arnab / Sharma, Satinder K. et al. | 2024
- 1535
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Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor SwitchingDowling, Karen M. / Chatterjee, Bikramjit / Ghandiparsi, Soroush et al. | 2024
- 1541
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Optimization of Step-Etched Junction Termination Extensions for Vertical GaN DevicesBinder, Andrew T. / Steinfeldt, Jeffrey / Allerman, Andrew A. et al. | 2024
- 1546
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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction PerformanceYu, Yiren / Liu, Tao / Ma, Rongyao et al. | 2024
- 1553
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Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-InterfaceHenn, Mirjam / Huber, Christian / Scholten, Dick et al. | 2024
- 1561
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Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS CapacitorsZagni, Nicolo / Fregolent, Manuel / Verzellesi, Giovanni et al. | 2024
- 1567
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Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam EvaporationWang, Fei / Chen, Genqiang / Shao, Guoqing et al. | 2024
- 1572
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Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICsLiu, Li / Guo, Qing / Wang, Jue et al. | 2024
- 1580
-
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC PhototransistorHuang, Danyang / Zhao, Xiaolong / Li, Quan et al. | 2024
- 1587
-
p-IrOx/n-β-Ga2O3 Heterojunction Diodes With 1-kV Breakdown and Ultralow Leakage Current Below 0.1 μA/cm2Zheng, Ruitao / Feng, Wenyong / Liao, Chao et al. | 2024
- 1592
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High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination ExtensionCui, Jiawei / Wu, Yanlin / Yang, Junjie et al. | 2024
- 1598
-
Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging TechnologyJiang, Zhuolin / Deng, Hongru / Zhou, Xuanze et al. | 2024
- 1606
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Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge TerminationWen, Junpeng / Hao, Weibing / Han, Zhao et al. | 2024
- 1618
-
Fabricating and TCAD Optimization for a SiC Trench MOSFET With Tilted P-Shielding Implantation and Integrated TJBSYi, Bo / Li, Huan / Zhang, Bingke et al. | 2024
- 1626
-
Estimation of Zero-Field Activation Energy for Traps in Fe- and C-Doped GaN-Based HEMTsRaja, P. Vigneshwara / Painter, Vaidehi Vijay / Dupouy, Emmanuel et al. | 2024
- 1633
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Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-SiRoy Chaudhuri, Rajarshi / Joshi, Vipin / Malik, Rasik Rashid et al. | 2024
- 1641
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GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory ApplicationsFu, Kai / Luo, Shisong / Fu, Houqiang et al. | 2024
- 1646
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On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTsModolo, Nicola / De Santi, Carlo / Baratella, Giulio et al. | 2024
- 1654
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Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMTWang, Fangzhou / Chen, Wanjun / Wang, Yang et al. | 2024
- 1662
-
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias StressChen, Haonan / Yu, Kanghua / Ding, Jieqin et al. | 2024
- 1670
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Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTsDoring, Philipp / Krause, Sebastian / Friesicke, Christian et al. | 2024
- 1676
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Effect of Electron Irradiation and Defect Analysis of β-Ga2O3 Schottky Barrier DiodesZhang, Zhengliang / Wang, Tianqi / Xiao, Liyi et al. | 2024
- 1681
-
Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage StressWang, Dawei / Mudiyanselage, Dinusha Herath / He, Ziyi et al. | 2024
- 1687
-
Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact ModelBhat, Zarak / Ahsan, Sheikh Aamir et al. | 2024
- 1694
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Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current StressWang, Xiaoming / Chen, Wanjun / Sun, Ruize et al. | 2024
- 1702
-
Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETsLal, Shalini / Lu, Jing / Thibeault, Brian J. et al. | 2024
- 1710
-
Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN DevicesHe, Quanbo / Wang, Hengyu / Xiao, Ming et al. | 2024
- 1718
-
Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation ConditionsZeng, Qi / Yang, Zhichao / Wang, Xingfu et al. | 2024
- 1728
-
Parasitic Gate Capacitance Model for N-Stack Forksheet FETsSharma, Sanjay / Sahay, Shubham / Dey, Rik et al. | 2024
- 1737
-
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient OperationsGoda, Akira / Matsui, Chihiro / Takeuchi, Ken et al. | 2024
- 1745
-
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise AnalysisAsanovski, R. / Arimura, H. / de Marneffe, J.-F. et al. | 2024
- 1752
-
Modelling the 3-D Charge-Sharing in Field-Plate Power MOSFETs With Circular LayoutsDeng, Gaoqiang / Wang, Jun / Song, Xuanting et al. | 2024
- 1758
-
Interfacial-Layer-Free Ge0.95Si0.05 Nanosheet FeFETsHsieh, Wan-Hsuan / Chen, Yu-Rui / Liu, Yi-Chun et al. | 2024
- 1764
-
Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETsLiu, Jiangwei / Teraji, Tokuyuki / Da, Bo et al. | 2024
- 1769
-
Integrating First-Principles-Based Non-Fourier Thermal Analysis Into Nanoscale Device SimulationSheng, Yufei / Wang, Shuying / Hu, Yue et al. | 2024
- 1776
-
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and BeyondZhang, Xuexiang / Yao, Jiaxin / Luo, Yanna et al. | 2024
- 1784
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A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultrascaled Nanosheet FETsZhao, Yusi / Xu, Zhongshan / Ding, Rongzheng et al. | 2024
- 1792
-
The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to ACLee, Ya-Huan / Chang, Kai-Chun / Tai, Mao-Chou et al. | 2024
- 1798
-
Temperature Nonmonotonic Behavior of GaN HEMTs Kink Effect Caused by Trap-Assisted Impact IonizationDong, Qingyang / Bo, Chunyue / Yang, Shuoxiong et al. | 2024
- 1805
-
Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate LengthIslam, Ahmad E. / Sepelak, Nicholas P. / Miesle, Adam T. et al. | 2024
- 1812
-
A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTsBhat, Zarak / Ahsan, Sheikh Aamir et al. | 2024
- 1820
-
A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTH Transients in p-GaN Gate Power HEMTsSingh, Shivendra Kumar / Wu, Tian-Li / Chauhan, Yogesh Singh et al. | 2024
- 1827
-
BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory WindowZheng, Zijie / Jiao, Leming / Zhang, Dong et al. | 2024
- 1834
-
Reliability Improvement in Vertical NAND Flash Cells Using Adaptive Incremental Step Pulse Programming (A-ISPP) and Incremental Step Pulse Erasing (ISPE)Park, Sung-Ho / Yoo, Ho-Nam / Yang, Yeongheon et al. | 2024
- 1839
-
Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap LayersCho, Yun-Ju / Kwon, Young-Ha / Seong, Nak-Jin et al. | 2024
- 1845
-
Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2Jia, Xinpei / Chai, Junshuai / Duan, Jiahui et al. | 2024
- 1852
-
Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile AnalysisJo, Hyungjun / Kim, Jongwoo / Cho, Yonggyu et al. | 2024
- 1858
-
Silicon Neuron Device With Neuronal Oscillation Behavior Based on Light Pulse ModulationWang, Yang / Wu, Lindong / Ban, Chaoyi et al. | 2024
- 1865
-
Design Guidelines of Hafnia Ferroelectrics and Gate-Stack for Multilevel-Cell FeFETLee, Sangho / Kim, Giuk / Lee, Youngkyu et al. | 2024
- 1872
-
Quantum Conductance and Temperature Effects in Titanium Oxide-Based Memristive DevicesKoymen, Itir / De Carlo, Ivan / Fretto, Matteo et al. | 2024
- 1879
-
Efficient Implementation of Boolean Logic Functions Using Double Gate Charge-Trapping Memory for In-Memory ComputingAnsari, Md. Hasan Raza / El-Atab, Nazek et al. | 2024
- 1886
-
Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access MemoriesTalapatra, Abhishek / Weisheit, Martin / Muller, Johannes et al. | 2024
- 1893
-
Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance VariationLee, Jaehyun / Asenov, Plamen / Rhyner, Reto et al. | 2024
- 1900
-
Compact Modeling and Mitigation of Parasitics in Crosspoint Accelerators of Neural NetworksLepri, N. / Glukhov, A. / Mannocci, P. et al. | 2024
- 1907
-
Interfacial Layer Selection Methodology for Customized Ferroelectric MemoriesLee, Hyun Jae / Moon, Taehwan / Nam, Seunggeol et al. | 2024
- 1913
-
A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis DepositionHung, Hao-Chun / Chang, Hung-Chi / Chang, Fang-Yu et al. | 2024
- 1920
-
Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different TemperaturesAhn, In-Soo / Ju, Byeong-Kwon / Choi, Sung-Hwan et al. | 2024
- 1926
-
Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate InsulatorLee, Taeho / Oh, Saeroonter et al. | 2024
- 1932
-
Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film TransistorsWang, Jiayi / Zhang, Kuo / Li, Yuxuan et al. | 2024
- 1940
-
Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal DiodeAhn, Jaehyun / Jeong, Jaewook et al. | 2024
- 1946
-
Engineering a Solution-Processed In2O3 TFT With Improved Ambient Stability via MoO3 DopingLee, Jae-Yun / Tarsoly, Gergely / Wang, Xiao-Lin et al. | 2024
- 1951
-
Abnormal Positive Shift of Threshold Voltage in Praseodymium-Doped InZnO-TFTs Under Negative Bias Illumination Temperature StressHan, Yongqi / Chen, Yankai / Li, Min et al. | 2024
- 1957
-
Preparation of Large Grain Size Polysilicon Using Long-Pulse Green Laser Annealing for 3-D Integration TechnologyLiu, Jinbiao / Mao, Shujuan / Xu, Jing et al. | 2024
- 1963
-
High-Performance Fully Thermal ALD-Processed IGZO Thin Film TransistorsChen, Zihui / Yang, Jun / Ding, Xingwei et al. | 2024
- 1969
-
Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum BarrierLei, Lei / Zhu, Zihe / Wei, Jiangxiong et al. | 2024
- 1974
-
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs DegradationSu, Mengwei / Liu, Hongxia et al. | 2024
- 1980
-
Impact of Bonding Layer Voids Distribution Uniformity on the Thermal Performance of Light-Emitting DiodeYu, Binhai / Liu, Hesheng / Yuan, Yikai et al. | 2024
- 1987
-
Analytical Modeling of the Dependence of the Open-Circuit Voltage With Temperature in CMOS PhotodiodesFernandez-Peramo, Pablo / Lenero-Bardallo, Juan Antonio / Lopez-Martinez, Juan M. et al. | 2024
- 1994
-
Development of InGaAs/AlGaAsSb Geiger Mode Avalanche PhotodiodesTaylor-Mew, J. / Collins, X. / White, B. et al. | 2024
- 1999
-
Investigating the Performance and Reliability of Au-Sn Bonded Flip-Chip Micro-LEDsYin, Luqiao / Zhou, Haojie / Ji, Xiaoxiao et al. | 2024
- 2005
-
1-D Linear Photonic Crystals Enable Narrow-Band Perovskite Photodetectors by High-Throughput Optical ModelZhou, Zhisheng / Xue, Qifan / Yuan, Zhangyu et al. | 2024
- 2012
-
Degradation Mechanisms of Hydrogen-Terminated Diamond MISFETs Under Off-State Stress ConditionsChen, Zhihao / Yu, Xinxin / Mao, Shuman et al. | 2024
- 2018
-
Influence of Pinch Effect on the Lifetime of a 2MW Silicon Carbide Photoconductive Semiconductor SwitchSun, Qian / Guo, Hui / Zheng, Zhong et al. | 2024
- 2024
-
A New Anisotropic Driving Force Model for SiC Device SimulationsJin, Seonghoon / Lee, Kyungmin / Choi, Woosung et al. | 2024
- 2030
-
Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer DepositionLi, Hui-Hsuan / Lin, Kuan-Yu / Tsai, Yi-He et al. | 2024
- 2036
-
High-Performance HfO2/Al2O3 Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD PlatformMukhopadhyay, Partha / Fletcher, Ivan / Couvertier, Zuriel C. et al. | 2024
- 2043
-
Quantum-Dot-Based Thermometry Using 12-nm FinFET and Machine Learning ModelsSingh, Sujit Kumar / Sharma, Deepesh / Srinivasan, P. et al. | 2024
- 2051
-
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical AnalysisNicoletto, Marco / Caria, Alessandro / Rampazzo, Fabiana et al. | 2024
- 2058
-
A Dual-Junction Thermophotovoltaic System Based on Tamm Plasmon Thermal EmitterZhao, Hailong / Song, Jinlin / Jin, Lin et al. | 2024
- 2064
-
Performance Improvement of Integrated MEMS Temperature, Humidity, and Air Velocity Sensors for Application in Smart BuildingsIzhar / Zhao, Xu / Tavakkoli, Hadi et al. | 2024
- 2072
-
Bio-Potential Sensing System With Monolithically Integrated Electrode Array and Analog Front-Ends on a Flexible SubstrateShi, Runxiao / Liu, Xuchi / Lu, Lei et al. | 2024
- 2078
-
Investigation on the Impact of Sr on Emission Property of Scandate CathodesZhang, Ruoqi / Wang, Xiaoxia / Ren, Feng et al. | 2024
- 2084
-
Simulation of Short Pulse Photoemission in a Microdiode With Implications for Optimal Beam BrightnessArnason, Hakon Orn / Torfason, Kristinn / Manolescu, Andrei et al. | 2024
- 2092
-
A New Method to Stably Transport the SEB With a Large Aspect Ratio by PCM With a Higher Order Bias Magnetic FieldYin, Pengcheng / Cai, Jinchi / Xu, Jin et al. | 2024
- 2099
-
Experimental Research on a Split-Cathode-Fed Magnetron Driven by Long High-Voltage PulsesLiziakin, G. / Belozerov, O. / Leopold, J. G. et al. | 2024
- 2105
-
Multiphysics Characteristics of a 600 W Broadband Ka-Band Pseudo-Periodic Helix Traveling Wave TubeMa, Mingjing / Xie, Yang / Shen, Changsheng et al. | 2024
- 2111
-
Development of an E-Band CW Space TWT With Substantial Improvement in PerformanceLi, Zhiliang / Qu, Bo / Li, Mengyuan et al. | 2024
- 2116
-
Generation and Stable Transmission of Miniature Electron Beams for 0.65-THz Traveling Wave TubesWu, Hanbang / Zheng, Yuan / Dong, Yang et al. | 2024
- 2122
-
Improvement for an S-Band Broadband KlystronXu, Shouxi / Zhang, Jian / Ding, Yaogen et al. | 2024
- 2126
-
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWTLu, Chaoxuan / Jiang, Wei / Liu, Guo et al. | 2024
- 2133
-
A Terahertz-Band Rectangular TE10 to Circular TE01 Mode ConverterShu, Guoxiang / Xie, Xinlun / Ren, Junchen et al. | 2024
- 2140
-
High-Frequency MW-class Coaxial Gyrotron Cavities Operating at the Second Cyclotron HarmonicChelis, Ioannis G. / Avramidis, Konstantinos A. / Peponis, Dimitrios V. et al. | 2024
- 2147
-
A Magnetron Using an Additional External Reactive Load for Frequency Tuning: Theory Features and ExperimentQiu, Shuang / Wang, Nan-Nan / Churyumov, Gennadiy I. et al. | 2024
- 2153
-
Current Model for Organic Diodes at Different Temperatures: Comparison With Universal Curve EquationHe, Hongyu / Lin, Xinnan / Zhang, Shengdong et al. | 2024
- 2159
-
Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared PhotodetectorsDing, Haokun / Li, Shuo / Wu, Songsong et al. | 2024
- 2165
-
Enhancing Upconversion Efficiency of Organic Near Infrared Upconversion Devices Based on Inverted Phosphorescent OLEDs as Emitters by Introducing Connecting LayerLv, Wenli / Zheng, Haochen / Li, Xuan et al. | 2024
- 2171
-
Influences of Source/Drain Extension Region on Thermal Behavior of Stacked Nanosheet FETSrivastava, Shobhit / Panwar, Sourabh / Shashidhara, M. et al. | 2024
- 2177
-
Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic StudyM, Shashidhara / Srivatsava, Shobhit / Panwar, Sourabh et al. | 2024
- 2184
-
The Study of Hysteretic Characteristics of FeFETs for Neuromorphic Computing Using a Closed-Form Analytical ModelJiang, Chunsheng / Chen, Hongying / Pan, Liyang et al. | 2024
- 2192
-
Performance-Tunable MoS2 Homojunction Photodiode Based on Different Built-In Electric FieldZhu, Xiaokun / Niu, Wencheng / Fu, Houqiang et al. | 2024
- 2196
-
Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETsManiyar, Ashraf / Raj, Pushp / Srinivas, P S T N et al. | 2024
- 2203
-
Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate DielectricTao, Xinge / Jiang, Weichao / Liu, Lu et al. | 2024
- 2210
-
Physical Modeling of Resonant Tunneling in Ferroelectric Tunnel Junctions With Multiple Quantum Well Superlattice HeterostructuresChang, Pengying / Li, Jie / Guo, Yirong et al. | 2024
- 2217
-
Measurement of Microdisplacement by Spin Manipulated Magnetometer of Nitrogen Vacancy Centers With Magnetic Flux Concentration StructureLiu, Xin / Li, Zhonghao / Zhang, Hao et al. | 2024
- 2224
-
Cost-Efficient Solution to Overcome Latch-Up Path in 5 V-Tolerant I/O With Low-Voltage Biased NBL Isolation Ring in a 0.18-μm BCD TechnologyHsu, Chen-Wei / Ker, Ming-Dou et al. | 2024
- 2228
-
Demonstration of Threshold Switching in Undoped SiOx Layer for Oscillation NeuronsHong, Eunryeong / Kim, Hyun Wook / Choi, Hyeonsik et al. | 2024
- 2233
-
Decoupled Plasma Nitridation (DPN) and Postnitridation Annealing (PNA) Treatment for Metal Boundary Effect ReductionTian, Ming / Chen, Kun / Wang, Chen et al. | 2024
- 2238
-
Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect EngineeringJung, Laeyong / Oh, Seungyeol / Jang, Hojung et al. | 2024
- 2243
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