Journal of vacuum science and technology / B
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1595
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Nanoscale etching of GaAs surfaces in electrolytic solutions by hole injection from a scanning tunneling microscope tipKaneshiro, C. et al. | 1997
- 1599
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Effect of etch holes on the mechanical properties of polysiliconSharpe Jr, William N. et al. | 1997
- 1604
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Modification of surface morphology and optoelectronic response in porous Si films by electrochemical methodsYang, Zhong-Hua et al. | 1997
- 1607
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Visible photoluminescence of Ge nanocrystallltes embedded in SiO2 thin filmsYue, Lanping et al. | 1997
- 1610
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Structure and phonon density of states in nanoclusters: Molecular dynamics study for AlSchommers, W. et al. | 1997
- 1613
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Thermal desorption of Si clusters from Si and Si-deposited Ta surfacesTanaka, Hideyuki et al. | 1997
- 1618
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Nanoscale organized assembly of nanoparticulate TiO2-stearate monolayers through the Langmuir-Blodgett methodLi, Lin Song et al. | 1997
- 1623
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Tensor low energy electron diffraction study for the structure of a Cr(001)-p-(1 x 1)-N surfaceRi, Chang-Seop et al. | 1997
- 1628
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Extraordinary growth of C60 on a GaAs(001) As-rich 2 x 4 surfaceSakurai, T. et al. | 1997
- 1633
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Precise force curves in air and liquid by magnetic force feedbackYamamoto, Shin-ichi et al. | 1997
- 1637
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Possible multistranded DNA induced by acid denaturation-renaturationLi, Jian Wei et al. | 1997
- 1641
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Scanning tunneling microscopy and low energy electron diffraction study of the formation of a (bent radical)3 x (bent radical)3 R30(degree) reconstruction on the hydrogen etched Si(111) 1 x 1 surfaceRogers, D. et al. | 1997
- 1647
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Frequency modulation detection high vacuum scanning force microscope with a self-oscillating piezoelectric cantileverChu, Jiaru et al. | 1997
- 1652
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Atomic force microscopy studies of Hg1-xCdxTe thin films grown by isothermal vapor phase epitaxyNardo, S.Di et al. | 1997
- 1657
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Ga focused-ion-beam shallow-implanted quantum wiresItoh, M. et al. | 1997
- 1661
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Improved cold electron emission characteristics of electroluminescent porous silicon diodesSheng, Xia et al. | 1997
- 1666
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Nanoprotrusion model for field emission from integrated microtipsPurcell, S.T. et al. | 1997
- 1678
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Electron emission from the pyramidal-shaped diamond after hydrogen and oxygen surface treatmentsYamada, T. et al. | 1997
- 1682
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Technique for fabricating self-aligned gates onto silicon field emitter arraysZhu, Chang-Chun et al. | 1997
- 1685
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Growth mechanism of planar-type GaAs nanowhiskersHaraguchi, K. et al. | 1997
- 1688
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Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristicsNamatsu, Hideo et al. | 1997
- 1697
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Cyclotron resonance in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1-xAs quantum well and InAs-GaAs superlattice channelsCury, L.A. et al. | 1997
- 1703
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High quality interfaces in GaAs-AlAs quantum wells determined from high resolution photoluminescenceReynolds, D.C. et al. | 1997
- 1707
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Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP-InPLaPierre, R.R. et al. | 1997
- 1715
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Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs-lnyAl1-yAs-lnP high electron mobility transistorsPeiro, F. et al. | 1997
- 1724
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Submicron air-bridge interconnection process for complex gate geometriesPersson, Magnus et al. | 1997
- 1728
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High rate CH4:H2 plasma etch processes for InPWhelan, Colin S. et al. | 1997
- 1733
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Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmasFeurprier, Y. et al. | 1997
- 1741
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Electron irradiance of conductive sidewalls: A determining factor for pattern-dependent chargingHwang, Gyeong S. et al. | 1997
- 1747
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Sidewall deposition film in platinum etching with Ar-halogen mixed gas plasmasShibano, Teruo et al. | 1997
- 1752
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Formation and mechanism of dimple-pit on Si substrate during WSIx-poly-Si gate stack etchPan, Paihung et al. | 1997
- 1758
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Integrated plasma-promoted chemical vapor deposition route to aluminum interconnect and plug technologies for emerging computer chip metallizationFaltermeier, Jonathan et al. | 1997
- 1767
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Accuracy of thin film stress measurements with c-Si microbeams fabricated by dry etchingBoutry, M. et al. | 1997
- 1773
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Study of Ohmic contact resistance to Ga(1-x)lnxAs-lnP composite channel InP high electron mobility transistors for X=35% to X= 81%Shealy, J.B. et al. | 1997
- 1775
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Reliable 0.28 mm metal contact technologyKim, J.S. et al. | 1997
- 1780
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Study of the copper reflow process using the GROFILMS simulatorFriedrich, L.J. et al. | 1997
- 1788
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Across-wafer nonuniformity of long throw sputter depositionMayo, A.A. et al. | 1997
- 1794
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Experimental evidence of two-dimensional-three-dimensional transition in the Stranski-Krastanow coherent growthBerti, M. et al. | 1997
- 1800
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Anomalous behavior of resistance in Al alloy interconnections stacked with Ti layers during electromigration testsKouno, T. et al. | 1997
- 1805
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Self-assembled monolayers exposed by metastable argon and metastable helium for neutral atom lithography and atomic beam imagingBard, A. et al. | 1997
- 1811
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Hybrid atomic force-scanning tunneling lithographyWilder, Kathryn et al. | 1997
- 1818
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Nanolithography by displacement of catalytic metal clusters using an atomic force microscope tipBrandow, S.L. et al. | 1997
- 1825
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Extension of krypton fluoride excimer laser lithography to the fabrication of 0.1 mm devicesOgawa, Tohru et al. | 1997
- 1833
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Distortion aberration in a symmetric magnetic doublet for an electron beam projection systemNakasuji, Mamoru et al. | 1997
- 1839
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On the link between electron shadowing and charging damageHwang, Gyeong S. et al. | 1997
- 1843
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Low temperature plasma enhanced chemical vapor deposition of fluorinated silicon oxide films as an interlayer dielectricSong, Juho et al. | 1997
- 1847
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Erratum: "Neutral shadowing in circular cylindrical trench holes" (J. Vac. Sci. Technol. B 14, 3492 (1996))Abraham-Shrauner, Barbara et al. | 1997
- 1848
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CUMULATIVE AUTHOR INDEX| 1997