Vacuum
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Table of contents
- 395
-
The new editorial management board| 1982
- 397
-
Editorial| 1982
- 399
-
Models of single crystal sputteringYurasova, VE / Eltekov, VA et al. | 1982
- 425
-
LEED intensity measurements by an improved Faraday cup collectorBechtold, HJ / Kreutz, EW / Sotnik, N et al. | 1981
- 433
-
Theoretical and experimental study of high fluence germanium implantation into silicon. Contribution of atomic mixingGras-Marti, A / Jimenez-Rodriguez, JJ / Peon-Fernandez, J et al. | 1982
- 439
-
5041. Contact charge-transfer lasers| 1982
- 439
-
5040. A nitrogen ion laser pumped by a rapid discharge| 1982
- 439
-
5039. An apparatus for measuring the adsorption of gases at high and low pressures| 1982
- 439
-
5034. Effect of turbulence on pressure probes| 1982
- 439
-
5038. Gauge calibration system based on piston manometer| 1982
- 439
-
5035. Viscosity measurements in the presence of electric fields| 1982
- 439
-
5036. Monte Carlo calculations for free molecular and near-free molecular flow through axially symmetric tubes| 1982
- 439
-
5037. The problem of the approximate calculation for molecular conductance| 1982
- 440
-
5043. A semi-empirical formula to describe the net emission coefficient of self-absorbed spectral lines for use in modelling high-pressure discharge lamps| 1982
- 440
-
5042. Ultrashort pulse generation by Nd3+: glass and Nd3+: YAG lasers| 1982
- 440
-
5046. Evaluation of ISABELLE full cell ultra-high vacuum system| 1982
- 440
-
5048. New series of air-cooled turbomolecular pumps for industry and research to be mounted in any position| 1982
- 440
-
5050. Theoretical investigation of the effect of the pump contour on the pumping speed of diffusion pumps| 1982
- 440
-
5044. Formation time and heating mechanism of arc cathode craters in vacuum| 1982
- 440
-
5051. A new development of refrigerators of high operational reliability for use in cryopumps| 1982
- 440
-
5047. A simple understanding of net outgassing rate as a function of pumping speed| 1982
- 440
-
5045. Performance of mechanical vacuum pumps in the molecular flow range| 1982
- 440
-
5049. Pumping of dry air and of saturated air-water vapour mixture with liquid ring vacuum pumps| 1982
- 441
-
5052. Application of cryopumps in industrial vacuum technology| 1982
- 441
-
5053. An approach to the non-linearity of an ionization vacuum gauge at the upper limit of the measured pressure| 1982
- 441
-
5054. Application of low temperature calorimetry for the measurement of impingement rate of gas molecules| 1982
- 441
-
5058. Developments of helium-leak-detection-techniques for UHVsystems of large accelerators and storage rings| 1982
- 441
-
5057. Cryostat for the production and acceleration of deuterium pellets for use in nuclear fusion plants| 1982
- 441
-
5061. Leak-detection in chemical plants with helium mass-spectrometer detectors| 1982
- 441
-
5055. Pyrolysis mass spectrometer for direct sampling of primary products of thermolysis reactions| 1982
- 441
-
5059. Detecting leaks in small parts| 1982
- 441
-
5056. Mass spectrometric analyser for individual aerosol particles| 1982
- 441
-
5060. Leak-detection in chemical plants| 1982
- 442
-
5062. The effect of the cold water pressure test on the leakage detection with test gases on a test heat exchanger| 1982
- 442
-
5065. A self-latching electromechanical shutter for use in vacuum evaporators| 1982
- 442
-
5070. Thermoelectric effect in ytterbium and samarium films| 1982
- 442
-
5064. Twin Knudsen cell for evaporation investigations| 1982
- 442
-
5066. Automatic shutter controller for molecular beam epitaxy| 1982
- 442
-
5071. Positive-ion emission from α-AGI films| 1982
- 442
-
5069. Electron transport studies in SiO2 films excited by a pulsed electron beam. (GB)| 1982
- 442
-
5067. Growth and thermal stability of single crystal metastable semiconducting (GaSb)1-x Gex films. (GB)| 1982
- 442
-
5063. A new simple universal leak-detector with air-cooled turbo-pump| 1982
- 442
-
5068. Morphology of thin superconducting Nb films| 1982
- 443
-
[bd5078. Thin film preparation by plasma and low pressure CVD in a horizontal reactor| 1982
- 443
-
5074. Gold-aluminium thin-film interactions and compound formation| 1982
- 443
-
5075. Effects of oxygen and chlorine on the interfacial crystallization of amorphous selenium films| 1982
- 443
-
5076. Reproductibility of vacuum deposited films of amorphous ZnTe| 1982
- 443
-
5080. Effect of atmospheric oxygen on evaporated chromium films| 1982
- 443
-
5079. Uniform evaporated coatings on rotating conical workholders| 1982
- 443
-
5073. Electrical transport properties of p-type Pb1—xCdxTe thin films| 1982
- 443
-
5072. Thermionic emission and atom vaporization of the Gd-B system| 1982
- 443
-
5077. Differences in nickel—aluminium films prepared by different evaporation methods| 1982
- 444
-
5087. Emission of electrons and positive ions upon fracture of oxide films| 1982
- 444
-
5082. Ion plating and ionization| 1982
- 444
-
5083. Thickness uniformity of evaporated layers in theory and practice| 1982
- 444
-
5088. Electron spectroscopy of ion beam and hydrocarbon plasma generated diamondlike carbon films| 1982
- 444
-
5089. Coating of preformed pieces with TiN by high rate sputtering| 1982
- 444
-
5084. Film thickness uniformity of sputter deposited layers-comparison between calculation and practical results| 1982
- 444
-
5085. On the properties of ion-beam sputtered CulnSe2 thin films| 1982
- 444
-
5081. Mechanical and tribological behaviour of ion plated soft metallic coatings| 1982
- 444
-
5086. Electrical properties of SiO2 and Si3N4 dielectric layers on InP| 1982
- 445
-
5096. Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms| 1982
- 445
-
5097. Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Au| 1982
- 445
-
5095. The dependence of deposition rate on power input for dc and rf magnetron sputtering| 1982
- 445
-
5098. Preferential sputtering and surface segregation in tungsten—molybdenum alloys| 1982
- 445
-
5094. Influence of bias sputtered glass on avalanche breakdown| 1982
- 445
-
5092. Differential sputtering and surface segregation: The role of enhanced diffusion| 1982
- 445
-
5091. Effects of argon pressure and substrate temperature on the structure and properties of sputtered copper films| 1982
- 445
-
5090. Reactive dc high-rate sputtering with the magnetron/plasmatron for industrial applications| 1982
- 445
-
5093. Properties of solar absorbing films produced by an in-line sputter coating plant| 1982
- 446
-
5105. Relations between the orientations of ion bombarded single crystals, resulting surface structures and sputtered spot patterns| 1982
- 446
-
5099. Surface recoil atoms in the angular distribution of sputtered gold under bombardment of monocrystals with ions| 1982
- 446
-
5106. Molecular beam levitator for sputter coating of microspheres| 1982
- 446
-
5100. Microstructure and properties of rf-sputtered amorphous hydrogenated silicon films| 1982
- 446
-
5102. A molecular dynamics simulation study of the influence of the ionatom potential function upon sputtering| 1982
- 446
-
5104. Asymmetric triangular grating profiles with 90 groove angles produced by ion-beam erosion| 1982
- 446
-
5101. The work function of sputter-formed Re-1% Pt| 1982
- 446
-
5103. Ion implantation and sputtering in the presence of reactive gases: Bombardment-induced incorporation of oxygen and related phenomena| 1982
- 447
-
5115. Impurity studies in fusion devices using laser-fluorescence spectroscopy| 1982
- 447
-
5116. Transition from diffusion-convection to shealth-convection of a cold Langmuir probe in a moving compressible plasma| 1982
- 447
-
5108. Magnetron sputtering of solar coatings inside tubes| 1982
- 447
-
5109. Thick zone plate fabrication using reactive sputter etching| 1982
- 447
-
5110. Oxygen plasma etching of thick polymer layers| 1982
- 447
-
5111. Simulation of ion-beam etched pattern profiles| 1982
- 447
-
5112. Strains and photovoltaic response in Ta-sputtered Si metal-insulator-semiconductor solar cells| 1982
- 447
-
5113. Stopping power measurements in the 20 150 KeV region using thick target backscattering: 1H and 4He on carbon, silicon and gold| 1982
- 447
-
5114. A Fabry Perot interferometer for plasma diagnostics| 1982
- 447
-
5107. The properties of films prepared by the rf sputtering of PTFE and plasma polymerization of some freons| 1982
- 448
-
5125. A hollow-cathode discharge as a cold uniform plasma source| 1982
- 448
-
5118. Flux-limited heat flow in a double plasma device| 1982
- 448
-
5121. High power heating in the ion cyclotron range of frequencies in the Wisconsin Tokapole II| 1982
- 448
-
5124. Diagnostics of high-pressure arc plasmas from laser-induced fluorescence| 1982
- 448
-
5117. Continuous slowing-down approximation range of 50 KeV 100 MeV electrons| 1982
- 448
-
5120. Spectroscopic observations of impurities in Tokapole II discharges| 1982
- 448
-
5122. An alpha particle range spectrometer using solid state nuclear track detectors| 1982
- 448
-
5127. O5 ions in a low pressure glow discharge of oxygen| 1982
- 448
-
5119. Numerical simulation of a system for ion temperature measurement by Thomson scattering in a tokamak| 1982
- 448
-
5123. Spectrum and energy levels of four-times-ionized niobium| 1982
- 448
-
5126. Hollow cathode startup using a microplasma discharge| 1982
- 449
-
5129. Double layer formation in a magnetized laboratory plasma| 1982
- 449
-
5132. Cross sections for the 16O(16O,8Beg,s)24Mg reaction and mechanisms of α-rearrangement reactions| 1982
- 449
-
5135. Dependence of the radiation spectra from channeled electrons on their energy| 1982
- 449
-
5130. Tst of an electronic distribution model with macroscopic measurements performed on a proton-beam-induced neon plasma containing nitrogen impurities| 1982
- 449
-
5131. Intermolecular potentials from proton spin-lattice relaxation time in H2 AR and H2-N2 gas mixtures| 1982
- 449
-
5133. The level structure of 142Pr deduced from the 141Pr(n,γ)142Pr reaction| 1982
- 449
-
5136. Radiation from high energy positrons in a potential of crystal planes| 1982
- 449
-
5128. Stationary striations in a glow discharge| 1982
- 449
-
5134. Levels in 149Nd studied with the (d,t) reaction| 1982
- 449
-
5137. Radiation and spin separation of high energy positrons channeled in bent crystals| 1982
- 449
-
5138. Total intensity of Kumakhov radiation of channeled positrons and electrons for high energy particles| 1982
- 450
-
5144. Effect of the turbulent atmosphere on the autocovariance function for a speckle field generated by a laser beam with random pointing error| 1982
- 450
-
5148. Compounds in the PdSi and PtSi system obtained by electron bombardment and post-thermal annealing| 1982
- 450
-
5139. Computer studies on radiation of axially-channeled electrons| 1982
- 450
-
5140. Effect of ion current in the collisionless theory of floating ac probe measurements| 1982
- 450
-
5143. Beam-intensity fluctuations in atmospheric turbulence| 1982
- 450
-
5146. Variance of intensity for a discrete-spectrum, polychromatic speckle field after propagation through the turbulent atmosphere| 1982
- 450
-
5141. Channeling analysis of MBE interfaces| 1982
- 450
-
5142. Developments and trends in vacuum metrology| 1982
- 450
-
5147. Ion beam oxidation| 1982
- 450
-
5145. Calculation and observation of thermal electrostatic noise in solar wind plasma| 1982
- 451
-
5150. A study of interfaces grown by molecular beam epitaxy| 1982
- 451
-
5157. Factors influencing the formation and growth of faulted loops in BF2+-implanted silicon| 1982
- 451
-
5158. Experimental and calculated depth distribution of damage and projected ranges of 20 keV 4He ions in nickel| 1982
- 451
-
5155. In-depth profiles of deep-trap concentration in Fe-implanted n-type silicon| 1982
- 451
-
5154. On the formation of binary compounds in system| 1982
- 451
-
5156. The reaction of fluorine atoms with silicon| 1982
- 451
-
5149. The role of plasma diffusion in heat dissipation during laser annealing| 1982
- 451
-
5151. Trapping of Sb by TaC and Cu precipitates in ion-implanted Fe| 1982
- 451
-
5152. Stoichiometric disturbances in ion implanted compound semiconductors| 1982
- 451
-
5153. Laser annealing to produce ferroelectric-phase PbTiO3 thin films| 1982
- 452
-
5159. Ion beam characterization of the GaAs-GaAs oxide interface for plasma and anodic oxides| 1982
- 452
-
5162. Possible oxygen chemisorption configurations on the Si(111) 2 × 1 surface| 1982
- 452
-
5160. Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the system| 1982
- 452
-
5168. Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations| 1982
- 452
-
5161. Interference enhanced Raman scattering study of the interfacial reaction of PD on a-Si:H| 1982
- 452
-
5163. Oxygen adsorption on the disordered silicon surface| 1982
- 452
-
5165. Effect of particle size on the chemisorption and decomposition of carbon monoxide by palladium and nickel clusters| 1982
- 452
-
5166. Radiation enhanced diffusion of bromine in sodium chloride crystal| 1982
- 452
-
5167. Effect of silicon dioxide surface-layer thickness on boron profiles for directly aligned implants into (100) silicon| 1982
- 452
-
Oxidation of silicon surfaces| 1982
- 453
-
5169. Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous silicon| 1982
- 453
-
5170. New ion implant technique for low-cost solar cell fabrication| 1982
- 453
-
5177. Diffusion of zinc in gallium arsenide: A new model| 1982
- 453
-
5176. The electrical properties of sulphur in silicon| 1982
- 453
-
5172. A strain monitor for ion implantation| 1982
- 453
-
5175. Fabrication of P+-N-N+ silicon solar cells by simultaneous diffusion of boron and phosphorus into silicon through silicon dioxide| 1982
- 453
-
5178. The influence of tin implantation on the oxidation of iron| 1982
- 453
-
5171. Modification of a surface oxide due to 4He ion bombardment| 1982
- 453
-
5173. Void formation and denudation in ion-irradiated nickel| 1982
- 453
-
5174. Selenium implantation in indium phosphide| 1982
- 454
-
5183. Recent European developments in MBE| 1982
- 454
-
5179. Directional reactive-ion-etching of InP with Cl2 containing gases| 1982
- 454
-
5187. Shallow PtSi-Si Schottky barrier contacts formed by a multilayer metallization technique| 1982
- 454
-
5188. Low-temperature redistribution and gettering of oxygen in silicon| 1982
- 454
-
5184. Growth of dislocation-free silicon films by molecular beam epitaxy (MBE)| 1982
- 454
-
5186. Improved properties of InxGa1 xAs layers grown by molecular-beam epitaxy on InP substrates| 1982
- 454
-
5181. Ion implantation and low-temperature epitaxial regrowth of GaAs| 1982
- 454
-
5180. Volatile metal oxide incorporation in layers of GaAs and Ga1-xAlxAs grown by molecular beam epitaxy| 1982
- 454
-
5182. Use of molecular beam epitaxy for the achievement of low resistance intercell contacts in multiband gap solar cells| 1982
- 454
-
5185. Molecular beam epitaxy of Ge-GaAs superlattices| 1982
- 455
-
5194. The effect of phosphorus ion implantation on molybdenum/silicon contacts| 1982
- 455
-
5189. Heteroepitaxial silicon growth on polycrystalline MoSi2| 1982
- 455
-
5196. Deep levels in electron irradiated edge-defined film-fed growth ribbon silicon| 1982
- 455
-
5192. Influence of ion radiation on surface reactivity| 1982
- 455
-
5193. Vapour phase epitaxy of CdxHg1-xTe using organumetallics| 1982
- 455
-
5197. Changes in the viscoelastic and electrical properties of polyethylene by the effect of gamma irradiation| 1982
- 455
-
5190. Radiation effects in crystalline SiO2: The role of aluminium| 1982
- 455
-
5191. Low-temperature annealing and hydrogenation of defects at the SiSiO2 interface| 1982
- 455
-
5195. Neutron transmutation doping of silicon and other semiconducting materials| 1982
- 456
-
5201. Ion beam characteristics of a gas-filled accelerator tube| 1982
- 456
-
5202. H− ion formation from a surface conversion type ion source| 1982
- 456
-
5203. Magnetic effects in high current ion beams| 1982
- 456
-
5206. Ion beam extraction from a plasma with aberration reduction by method of mutual exclusion| 1982
- 456
-
5205. Laser cooling of heavy-ion beams| 1982
- 456
-
5198. Theory of the spatial distribution of defects in radiation cascades in crystals. I. The cascade of moving atoms| 1982
- 456
-
5207. Faraday cup analysis of ion beams produced by a dense plasma focus| 1982
- 456
-
5199. Theory of the spatial distribution of defects in radiation cascades in crystals. II. The structure of the cascade region| 1982
- 456
-
5209. Mass transport in liquid gallium ion beam sources| 1982
- 456
-
5204. Molecular beam facility for studying mass spectrometer performance| 1982
- 456
-
5208. Influence of spherical and chromatic aberrations on the half-radius of an electron beam| 1982
- 456
-
5200. High density cascade effects| 1982
- 457
-
5218. Intrinsic and defect surface states on single-crystal metal oxides| 1982
- 457
-
5211. Geometrical effects on the beamlet optics of a two-stage ion accelerator| 1982
- 457
-
5210. A compact ion source with high brightness| 1982
- 457
-
5213. Chemical composition of the interface as determined by X-ray photoelectron spectroscopy| 1982
- 457
-
5215. New fluorescence detection system for X-ray absorption spectroscopy| 1982
- 457
-
5212. Some experimental facts that indicate the elimination of astigmatism in ion beams with separators using crossed electric and magnetic fields| 1982
- 457
-
5214. Silicide interface stoichiometry| 1982
- 457
-
5217. Surface and interface properties of Zn3P2 solar cells| 1982
- 457
-
5216. Angle-resolved electron spectrometer with multidetection| 1982
- 458
-
5220. Electron damage in ZnSe using transmission electron microscopy| 1982
- 458
-
5221. Secondary ion emission from binary alloy systems. Part I: O2+ bombardment| 1982
- 458
-
5224. Determination of the multiplier gain of a photomultiplier| 1982
- 458
-
5225. A goniometer head for an atom-probe field ion microscope| 1982
- 458
-
5222. Secondary ion emission from binary alloy systems. Part II: Ar+ bombardment with O2 absorption| 1982
- 458
-
5226. Transmission electron microscope study of ion beam annealing effects of ion-implanted and evaporated amorphous silicon| 1982
- 458
-
5227. Novel charged particle analyser for momentum determination in the multichanneling mode. II. Physical realization, performance tests, and sample spectra| 1982
- 458
-
5223. Grain boundary potential determination in polycrystalline silicon by the scanning light spot technique| 1982
- 458
-
5219. A study of secondary molecular ion formation in rare earth and rare earth oxides| 1982
- 458
-
5228. Ultrahigh vacuum multipurpose offset manipulator for surface and thin film reaction studies| 1982
- 459
-
5231. An extended X-ray absorption fine structure study of amorphous and crystalline germanium| 1982
- 459
-
5233. Low energy ion scattering (LEIS) and the compositional and structural analysis of solid surfaces. Part I| 1982
- 459
-
5232. Potentiometric nondestructive testing of surface-hardened materials| 1982
- 459
-
5236. Metal/silicon interface formation: The and systems| 1982
- 459
-
5229. Electron emission from molybdenum under ion bombardment| 1982
- 459
-
5235. Study of stability of MIS polycryslalline silicon solar cells by Auger electron spectroscopy| 1982
- 459
-
5230. Depth profile composition studies of thin film CdS:Cu2S solar cells using XPS and AES| 1982
- 459
-
5234. Trace detection in surface microanalysis| 1982
- 460
-
5244. Surface reconstruction and interface formation in Si and GaAs| 1982
- 460
-
5241. GaAs-oxide interface states: Gigantic photoionization via Augerlike process| 1982
- 460
-
5242. Surface topography and alignment of liquid crystals on rubbed oxide surfaces| 1982
- 460
-
5237. The surface energy of Si, GaAs, and GaP| 1982
- 460
-
5239. Ion channeling and Auger electron spectroscopy study of Sb-diffused Pb1 xSnxTe crystals| 1982
- 460
-
5240. Design of a molecular beam surface scattering apparatus for velocity and angular distribution measurements| 1982
- 460
-
5245. Atomic structure of GaP (110) and (111) faces| 1982
- 460
-
5238. A study of the SiAuAg interface by surface techniques| 1982
- 460
-
5243. An atom probe study of the anomalous field evaporation of alloys containing silicon| 1982
- 461
-
5248. LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110)| 1982
- 461
-
5252. A new theory of electronic surface states| 1982
- 461
-
5251. Effects of surface relaxation on the electronic structure of ZnO| 1982
- 461
-
5249. Atomic geometry of AlGaAs interfaces: GaAs (110)-p (1 × 1)-Al(θ), 0 ≤ θ ≤ 8.5 monolayers| 1982
- 461
-
5247. On the electronic structure of clean, 2 × 1 reconstructed silicon (001) surfaces| 1982
- 461
-
5250. Reconstructions of GaAs and AlAs surfaces as a function of metal m As ratio| 1982
- 461
-
5246. Angle-resolved and -integrated photoemission from a ZnSe (110) surface| 1982
- 462
-
5253. A study of surface potentials of GaAs using the Kelvin probe method and the variations of the photoemission threshold| 1982
- 463
-
Solar selective surfacesHill, R. et al. | 1982
- 465
-
Vacuum group committee report 1981/2Grossart, GS / Colligon, JS et al. | 1982
- 467
-
Announcement| 1982