Vacuum
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Table of contents
- 419
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Digital deposition controller| 1971
- 419
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Sputtering unit| 1971
- 420
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Vacuum cooling plant| 1971
- 420
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Sputtering system and substrates| 1971
- 420
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Automated planetary evaporator| 1971
- 420
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Vacuum furnace| 1971
- 421
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Preservation plant for Canterbury| 1971
- 421
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Marshall furnaces| 1971
- 422
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Manipulator agreement| 1971
- 422
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Conference on laser interactions with matter| 1971
- 422
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Applications of Auger spectroscopy| 1971
- 422
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Wentgate appointment| 1971
- 422
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Summary of Edwards vapour diffusion pumps| 1971
- 422
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The Institute of Physics| 1971
- 422
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Conference on ultrahigh vacuum| 1971
- 423
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R & D manager for Varian| 1971
- 425
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Conferences and symposia| 1971
- 427
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News from the vacuum societies| 1971
- 427
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881. Influence of accommodation coefficient on the mean time of flight of molecules through a tube, with linear increase of temperature along its length| 1971
- 431
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888. Calculation of partial molar quantities in real gaseous systems| 1971
- 431
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882. Diffusion of Ar, Kr, and Xe in CaF2 investigated on U-doped single crystals of CaF2 after neutron irradiation| 1971
- 431
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884. Sorption characteristics of SPN porous nonevaporated getters| 1971
- 431
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885. Adsorption of oxygen and water vapour on chemically treated germanium single crystal surfaces. 2. Measurement of water vapour adsorption by tritium indication| 1971
- 431
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887. Adsorption of oxygen and water vapour on chemically treated germanium single crystal surfaces. 1. Methods| 1971
- 431
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883. Application of differential analysis by infrared spectrometer for the study of methanol adsorption on Ag-SiO2| 1971
- 431
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886. Role of the sample holder in the thermal investigation of processes accompanied by CO decomposition| 1971
- 432
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901. Thermally stimulated exo-electron emission as a method for analyzing the spatial trap distribution in insulating layers| 1971
- 432
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891. Work function determination for molybdenum, tantalum and rhenium by the contact potential difference method| 1971
- 432
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902. Influence of H2+ and D2+ ion excitation on cross section of their dissociation on collision with atoms and molecules in the energy range of 0.1 to 2 keV| 1971
- 432
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894. Influence of ion bombardment on the thermionic properties of a palladium-barium alloy| 1971
- 432
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893. Influence of high electric fields on the thermionic emission from semiconducting cathodes| 1971
- 432
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897. Time resolved measurements of the energy distribution of electrons in unstable plasma. II. Measurement in the ionization waves| 1971
- 432
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900. Field emission study of selenium and tellurium thin films on a tungsten surface| 1971
- 432
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904. Work function of Re-Zr alloys| 1971
- 432
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889. On the isochoric change of state of a liquid-vapour system| 1971
- 432
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895. Approximation of the apparent secondary emission coefficient in a broad range of target potential variations| 1971
- 432
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896. Time resolved measurements of the electron energy distribution in unstable plasma. I. Measurement technique| 1971
- 432
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903. Characteristics of electric current oscillations in a caesium diode| 1971
- 432
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898. Low-current helium discharge at low pressures| 1971
- 432
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890. Technical and economic efficiency of thermionic cathode| 1971
- 432
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892. Investigation of noise effects in a glow discharge in crossed electric and magnetic fields| 1971
- 432
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899. Ionization waves in inert gas discharges| 1971
- 433
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905. Work function of the Mo-Re alloy system| 1971
- 433
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911. Review of liquid ring vacuum pump and compressor constructions| 1971
- 433
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906. Investigation of diffusion and thermionic properties of the W-Re system| 1971
- 433
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908. Influence of ion bombardment on thermionic emission of Re-Th alloy| 1971
- 433
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909. All-metal ultrahigh vacuum aggregate| 1971
- 433
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914. Back-migration of oil vapour from a diffusion pump into the pumped volume| 1971
- 433
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912. Nomograms for design of water vapour ejector pump stages| 1971
- 433
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913. State-of-the-art and trends in the application of working fluids for obtaining ultrahigh vacuum with the aid of oil vapour pumps| 1971
- 433
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907. Investigation of optimum operation conditions of thermionic cathodes at high current densities| 1971
- 433
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910. Vacuum lock systems with intermediate pumping| 1971
- 434
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921. An ion source for mass spectrometer type MI-1305| 1971
- 434
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920. Mass analyzer AMN-1 on metallic flange| 1971
- 434
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924. Supply unit for a radiometer gauge| 1971
- 434
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926. Calibration of thermal-conductivity gauges for water vapour| 1971
- 434
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919. Two-stage cryogenic pump for obtaining ultrahigh vacuum| 1971
- 434
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917. Dependence of parameters of liquid ring vacuum pumps and compressors on the quantity of supplied liquid| 1971
- 434
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922. Modern vacuum gauges| 1971
- 434
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915. Determination of gas leakage through ring gaps of liquid ring vacuum pumps| 1971
- 434
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925. Storage quadrupole gas mixture analyzer| 1971
- 434
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923. Improvement of VIT-1A vacuum gauge| 1971
- 434
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918. Influence of technological and assembly factors on the basic operating parameters of ejector vacuum-pump stages| 1971
- 434
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927. Mechano-electronic transducers (mechanotrons) and their utilization| 1971
- 434
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916. Numerical determination of hydraulic losses in liquid ring vacuum pumps| 1971
- 435
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932. Matching of S49-2 glass-to-29NK Kovar alloy seals at low temperatures| 1971
- 435
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933. The Dewar vessel for liquid helium| 1971
- 435
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936. Methods and instruments for modern leak detection| 1971
- 435
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930. Farvitron signal decay| 1971
- 435
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928. Control digital manometer| 1971
- 435
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935. Cryostat for liquid helium with high-vacuum insulation and without nitrogen| 1971
- 435
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931. Arrangement for motion transfer in vacuum| 1971
- 435
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934. Calculation of the helium evaporation rate in nitrogen-free cryostats with high-vacuum insulation| 1971
- 435
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929. Determination of ratio of D/H on mass spectrometer type MI-1305 with modulated accelerating voltage| 1971
- 435
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937. Aspects of an ultrahigh vacuum furnace at temperature of 800°C| 1971
- 435
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938. Influence of condensation rate on structure of cadmium selenide polycrystalline films| 1971
- 436
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940. Growth of single crystal selenium films| 1971
- 436
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952. Intrinsic mechanical stress in evaporated thin metallic films (gold, nickel-chromium on mica)| 1971
- 436
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950. Structure and some physical properties of iron-gadolinium films| 1971
- 436
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944. Ferro-antiferromagnetic coupling between a NiFe thin film and NiO single crystal substrate| 1971
- 436
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951. Epitaxial films of oxidized gadolinium| 1971
- 436
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939. Obtaining dielectric films in low-voltage Penning discharge and their investigation| 1971
- 436
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941. Obtaining epitaxial single crystal copper films with thickness of 5000 to 8000 Å and making more precise their orientation with the aid of the channelling effects| 1971
- 436
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945. The annealing behaviour of evaporated Ni/Cr films| 1971
- 436
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953. Electrical resistance and structure of films of tungsten, molybdenum and chromium obtained by laser evaporation| 1971
- 436
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948. Phase composition of gadolinium and terbium films| 1971
- 436
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942. Manufacturing narrow superconducting bridges| 1971
- 436
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946. On some parameters of high vacuum and their role in physics of thin film coatings| 1971
- 436
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949. High-temperature ageing of Ni-Cr layers| 1971
- 436
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954. Vacuum apparatus, type VUTP-2, for deposition of thin film optical coatings| 1971
- 436
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943. On the relation between certain dynamic and static properties of thin magnetic films| 1971
- 436
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947. Structure of CdSb films prepared by pressing of the melt in vacuum| 1971
- 437
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962. Obtaining thin films by the method of electric explosion in vacuum| 1971
- 437
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960. Utilization of chromium vacuum metallization of glass substrates in the fabrication of photomasks| 1971
- 437
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961. Structure and formation of thin tantalum films obtained by electron bombardment| 1971
- 437
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965. Preparation and some properties of TlGaSe2 thin films| 1971
- 437
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956. Substrate influence on structure of tantalum vacuum condensates| 1971
- 437
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955. On the problem of obtaining thin magnetic films on rotating substrates| 1971
- 437
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967. Non-rectifying contacts to gallium arsenide obtained by the method of ion implantation| 1971
- 437
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958. Evaporated contacts to silicon carbide| 1971
- 437
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959. Investigation of the masking properties of silicon nitride films on diffusion of some additives in silicon| 1971
- 437
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957. Preparation and some properties of germanium monoselenide thin films| 1971
- 437
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963. Heteroepitaxy of metals and semiconductors| 1971
- 437
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964. Study of the adsorption edge in deposited wurtzite and sphalerite CdSe thin films| 1971
- 437
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966. Temperature regulator for a vacuum thermal evaporation apparatus| 1971
- 438
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975. Investigation of transient processes in the low-voltage arc of a thermionic converter with caesium vapour| 1971
- 438
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970. Investigation of deposits on electrodes and envelopes of pulsed lamps| 1971
- 438
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973. Utilization of alloys based on the Ni-Re system as oxide cathode core material for ultrahigh frequency titanium-ceramic triodes| 1971
- 438
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971. Preliminary investigation of a three-electrode caesium thermionic converter| 1971
- 438
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977. Electrically conducting metal-ceramics for cathode heaters by current passage| 1971
- 438
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969. Electrochemical treatment of electro-vacuum devices with different combinations of metals| 1971
- 438
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982. Investigation of CO2 laser with germanium Brewster windows| 1971
- 438
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978. Sintering of the alundum coatings of electro-vacuum device heaters| 1971
- 438
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972. Arrangement for opening of devices with getters in vacuum ambient| 1971
- 438
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979. Some results of investigation of the accuracy of cathodes in receiving tubes| 1971
- 438
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983. Cryostat for Ge/Li/-detector| 1971
- 438
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968. Obtaining n-type silicon epitaxial layers by vacuum sublimation| 1971
- 438
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980. Efficiency of the metal diffusion seal in the stem-less pumping of electro-vacuum devices| 1971
- 438
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976. Electrically conducting metal-ceramics for cathode heaters heated by external source| 1971
- 438
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974. Experimental investigation of pre-discharge Knudsen regimes in caesium diode operation| 1971
- 438
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981. Hermetization of copper ampoules by galvanic method| 1971
- 439
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991. Vacuum monochromator with differential pumping MV-4| 1971
- 439
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985. Chamber for nuclear activation investigations| 1971
- 439
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987. Origin of image streaks in a field ion microscope| 1971
- 439
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986. Universal ultrahigh vacuum crystal holder| 1971
- 439
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995. Point microphotometer for measurement of diffracted beam intensities in low energy electron diffraction| 1971
- 439
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988. Investigation of hydrocarbon layer formation in a mirror electron microscope| 1971
- 439
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989. The dosage of the swelling in electron irradiated nickel| 1971
- 439
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990. Development of the surface topography on polycrystalline metals by ion bombardment investigated by scanning electron microscopy| 1971
- 439
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993. Determination of the relation of spectral emissivities at high temperatures| 1971
- 439
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992. A cryostat for measuring electric and thermoelectric properties in the range 2.5 to 300°K| 1971
- 439
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994. Apparatus for low energy electron diffraction at low temperatures| 1971
- 439
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984. High-current pulsed electron accelerator| 1971
- 440
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1002. A nitrogen cryostat for neutron spectroscopy measurements in the 80 to 300°K temperature range| 1971
- 440
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1004. Deconvolution of ionization efficiency data as a means of determining fragmentation mechanisms in the mass spectrometer| 1971
- 440
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1008. Growing thin single crystals of metals| 1971
- 440
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1009. Lasers in spectrometry| 1971
- 440
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1001. Experimental vidicon sensitive to X-rays| 1971
- 440
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1007. Investigation of kinetics of sintering by hot pressing of niobium carbide in the homogeneity region| 1971
- 440
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998. Cleaning of replicas from organic residues| 1971
- 440
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1000. Demountable vacuum systems for investigation of electron-optical systems| 1971
- 440
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1003. Molecular beam kinetics: Reactions of H and D atoms with diatomic alkali molecules| 1971
- 440
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999. Demountable micro-focusing X-ray tube with magnetic focusing of electron beam| 1971
- 440
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1006. Gaseous phosphorus compounds. IV. Thermodynamic study of gallium monophosphide with a mass spectrometer and dissociation energy of aluminium diphosphide| 1971
- 440
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996. Improved transistor circuit for tip etching| 1971
- 440
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997. Preparation of ultrahigh frequency Gunn diodes of GaAs single crystals| 1971
- 440
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1005. Excitation of the CO fourth positive band system by electron impact on carbon monoxide and carbon dioxide| 1971
- 441
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1014. Cryostat and evaporator for spectral investigations of low volatile compound vapours by the method of insulation in matrix| 1971
- 441
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1023. Alloys of the Ni-Re system for oxide cathodes of electro-vacuum devices| 1971
- 441
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1021. Phase diagram of triple system W-Re-Ir| 1971
- 441
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1016. Investigation of the influence of thermal treatment on structure and properties of MR-47VP alloy| 1971
- 441
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1010. Edge emission in GaSe and GaS| 1971
- 441
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1022. Some thermo-physical properties of Mo-Re alloys| 1971
- 441
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1017. Vacuum carbidization of transition metals of IV and V groups of the periodic system of elements| 1971
- 441
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1015. Investigation of the melting process of tungsten-rhenium alloy| 1971
- 441
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1012. Low-temperature resistivity of Bi and its alloys| 1971
- 441
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1020. Physico-chemical interaction and properties of alloys of nickel with elements of III A group| 1971
- 441
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1013. Apparatus for investigation of plastic deformation in vacuum| 1971
- 441
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1011. Some advances in vapour ejector vacuum pump application in installations for vacuum treatment of steel outside ovens| 1971
- 441
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1025. Influence of rhenium content in an alloy with tungsten on technological and utilization properties of oxide cathode heaters| 1971
- 441
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1018. Separation of hydrogen-nitrogen mixture by dynamic adsorption on activated carbon| 1971
- 441
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1019. Rhenium and its alloys with tungsten for electro-vacuum devices| 1971
- 441
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1024. Application of VR-27VP alloy in manufacture of cathode cores of electron tubes with short heating time| 1971
- 442
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1033. Activated solder for passive metal-to-ceramic seals| 1971
- 442
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1031. Influence of dimensions of elements of metal-ceramic groups on their thermo-mechanical strength| 1971
- 442
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1037. Investigation of the behaviour of compressed seals at enhanced temperatures| 1971
- 442
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1026. Utilization of Mo-Re alloy in electro-vacuum devices| 1971
- 442
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1030. Electron beam welding equipments of Manfred von Ardenne Institute| 1971
- 442
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1035. Investigation of the brazing process for graphite materials with formation of carbide interface| 1971
- 442
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1034. Investigation of contact interaction of sulphide ceramics with metals and development of their sealing technique| 1971
- 442
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1027. Properties and application of vacuum-tight ceramic material Saphirit| 1971
- 442
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1038. Electrolytic phenomena on the glass-metal boundary| 1971
- 442
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1041. Ultrasonic cleaning of components and groups of vacuum pumps in freon 30| 1971
- 442
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1028. Gas-discharge cleaning of glass components of vidicons| 1971
- 442
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1029. Soldering of beryllium with soft solder| 1971
- 442
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1036. Determination of the thermal expansion coefficient difference of two samples on the Shevenar dilatometer| 1971
- 442
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1040. Partial pressures of residual gases in long-life travelling wave tubes| 1971
- 442
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1039. Determination of stress and cohesion forces of glass with metal in compressed non-matched seals| 1971
- 442
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1032. Possibility of using cobalt and palladium as solder for active ceramic-to-metal seals| 1971
- 443
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Author index of abstracts| 1971