IEEE transactions on electron devices
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 6101
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Thank You to Our Reviewers and Editors!Fay, Patrick et al. | 2023
- 6103
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Power-Line-Triggered ESD Protection SCR for 0–20 GHz Applications in CMOS TechnologyChang, Chun-Rong / Lin, Chun-Yu et al. | 2023
- 6110
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Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETsDuan, Yongxin / Chen, Zhihao / Gao, Nana et al. | 2023
- 6118
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Vertically Stacked Nanosheet Number Optimization Strategy for Complementary FET (CFET) Scaling Beyond 2 nmLi, Shixin / Luo, Yanna / Xu, Haoqing et al. | 2023
- 6125
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Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP HeterointerfaceQiao, Lesheng / He, Gang / Jiang, Shanshan et al. | 2023
- 6132
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Investigation of Electrothermal Characteristics in Silicon Forksheet FETs for Sub-3-nm NodeLim, Jaewan / Jeong, Jinsu / Lee, Junjong et al. | 2023
- 6138
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An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron InjectionChen, Weizhong / Shen, Wenliang / Li, Cheng et al. | 2023
- 6144
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Device Design Direction of CSTBT for Low Loss and EMI NoiseNishi, Koichi / Konishi, Kazuya / Tadakuma, Toshiya et al. | 2023
- 6151
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Novel Scheme of Inner Spacer Length Optimization for Sub-3-nm Node Silicon n/p Nanosheet Field-Effect TransistorsLee, Sanguk / Jeong, Jinsu / Lee, Seunghwan et al. | 2023
- 6157
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Impact of Aspect Ratio and Interface Trap Charge on the Performances of Junctionless MOSFET-Based Adiabatic Logic CircuitGanguli, Tanushree / Chanda, Manash / Sarkar, Angsuman et al. | 2023
- 6163
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Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS IntegrationZhao, Fei / Li, Yan / Li, Yongliang et al. | 2023
- 6169
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Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETsLi, Xianghui / Tang, Chengkang / Gu, Yi et al. | 2023
- 6175
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Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs—Part IRoy Chaudhuri, Rajarshi / Gupta, Amratansh / Joshi, Vipin et al. | 2023
- 6183
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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part IIChaudhuri, Rajarshi Roy / Gupta, Amratansh / Joshi, Vipin et al. | 2023
- 6190
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Step Graded Floating Island Embedded Drift Design Engineering for High-Performance Vertical Power DevicesJamal, Rashid / Gupta, Partha Sarathi / Rahaman, Hafizur et al. | 2023
- 6196
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The ESD Behavior of D-Mode GaN MIS-HEMTLiu, Chao / Shi, Yijun / He, Zhiyuan et al. | 2023
- 6204
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Assessment of T-Gate and Π-Gate HEMT Through Cellular Monte Carlo SimulationsAcharjee, Joy / Singh, Ramji / Merill, Ky et al. | 2023
- 6211
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Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier DiodesMalik, Rasik Rashid / Joshi, Vipin / Chaudhuri, Rajarshi Roy et al. | 2023
- 6217
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Numerical Analysis of Impact Ionization Effects on Hard Switching in AlGaN/GaN HEMTsOnodera, Hiraku / Kabemura, Toshiaki / Horio, Kazushige et al. | 2023
- 6225
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Scattering by Stress-Induced Composition Modulation Around Edge Dislocations in GaN-Based HeterostructuresLi, Qun / Li, Yao / Zhang, Yachao et al. | 2023
- 6231
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Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTsWang, Yan / Zheng, Wenhao / Mao, Shuman et al. | 2023
- 6237
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Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface PropertiesKo, Kyul / Ahn, Dae-Hwan / Suh, Hoyoung et al. | 2023
- 6244
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Highly Robust GaN Power Amplifier at Millimeter-Wave Frequencies Using Sputtered Iridium Gate MMIC TechnologyTsao, Yi-Fan / Chiu, Ping-Hsun / Chevtchenko, Serguei et al. | 2023
- 6250
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Scalable Large Signal Modeling for GaAs Schottky Diode Including Edge Effects and DC/AC DispersionZhang, Ao / Gao, Jianjun et al. | 2023
- 6256
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Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel EffectGao, Zhan / De Santi, Carlo / Rampazzo, Fabiana et al. | 2023
- 6262
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Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact ModelingWu, Ming-Hung / Cho, Chen-Yi / Huang, Hsin-Hui et al. | 2023
- 6268
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Two-Transistor Metal–Ferroelectric–Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part II: ExperimentWu, Ming-Hung / Cho, Chen-Yi / Huang, Hsin-Hui et al. | 2023
- 6273
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3-D Stackable Offset-Via Antifuse by Cu BEOL Process in Advanced CMOS TechnologiesYeh, Li-Yu / Chang, Ya-Lin / Chih, Yue-Der et al. | 2023
- 6279
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Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory ComputingVasilopoulos, Athanasios / Buchel, Julian / Kersting, Benedikt et al. | 2023
- 6286
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BEOL FeFET SPICE-Compatible Model for Benchmarking 3-D Monolithic In-Memory TCAM ComputationKumar, Shubham / Prakash, Om / Chauhan, Yogesh Singh et al. | 2023
- 6293
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Voltage-Gated Domain Wall Magnetic Tunnel Junction for Neuromorphic Computing ApplicationsLone, Aijaz H. / Li, Hanrui / El-Atab, Nazek et al. | 2023
- 6301
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Implementation of BCM Learning Rule Based on Room Temperature Derived α-IGZO Synaptic TransistorsZhu, Minmin / He, Gang / Fu, Can et al. | 2023
- 6307
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Multifrequency Retention Model of HfO2-Based FRAMKondratyuk, Ekaterina / Mikheev, Vitalii / Chouprik, Anastasia et al. | 2023
- 6313
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Bidirectional Precharge and Negative Bias Scheme for Program Disturbance Suppression in 3-D NAND Flash MemoryNam, Kihoon / Park, Chanyang / Kim, Donghyun et al. | 2023
- 6318
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Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access MemoryMondal, Debashis / Singh, Arun / Bhatt, Shubham et al. | 2023
- 6324
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Size-Scaling Effect on Domain Switching Time and Coercive Field of TiN/Hf0.5Zr0.5O2/TiN Thin-Film CapacitorsZhang, Wen Di / Jiang, An Quan et al. | 2023
- 6329
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An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO2-/Si3N4-Based GAA-MOSFET for SRAM ApplicationBhol, Krutideepa / Jena, Biswajit / Nanda, Umakanta et al. | 2023
- 6336
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All-Spin Artificial Neural Network Based on Spin–Orbit Torque-Induced Magnetization SwitchingCao, Zhen / Zhang, Shuai / Hou, Jincheng et al. | 2023
- 6341
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Logic-in-Memory Approach Realizing Memristor-Based MultiplexersZhang, Chengyu / Ma, Yinghao / Song, Yujie et al. | 2023
- 6347
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Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT StabilityYang, Hae Lin / Kim, Yoon-Seo / Hwang, Taewon et al. | 2023
- 6354
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Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten DopingZhao, Han-Lin / Shan, Fei / Wang, Xiao-Lin et al. | 2023
- 6359
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AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate ContactCatania, Federica / Saeedzadeh Khaanghah, Niloofar / Corsino, Dianne et al. | 2023
- 6364
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Interpretation of Hopping Transport Based on Pentacene Thin-Film TransistorsZhang, Peng / Jacques, Emmanuel / Rogel, Regis et al. | 2023
- 6369
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Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-Film TransistorsHe, Song / Li, Haoxin / Xu, Guangwei et al. | 2023
- 6375
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Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film TransistorsZhang, Xinnan / Xu, Lei / Liang, Ruyu et al. | 2023
- 6381
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Degradation of InSnZnO Thin-Film Transistors Under Negative Bias StressJiang, Zhendong / Zhang, Meng / Deng, Sunbing et al. | 2023
- 6387
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Highly Stable Flexible Thin-Film Transistors in Harsh Environments by Superhydrophobic PassivationsChen, Yayi / Zhong, Wei / Chen, Rongsheng et al. | 2023
- 6393
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Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial StructurePan, Kui / Zhang, Kaixin / Deng, Liying et al. | 2023
- 6399
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Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic IntegrationLiu, Yang / Yuan, Lei / Sun, Chenyue et al. | 2023
- 6406
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Highly Sensitive Photovoltaic-Type DUV Detector Based on SnO₂ Quantum DotsKan, Hao / Lin, Zhuogeng / Wang, Zhao et al. | 2023
- 6410
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Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-ElectrodeJia, Tong / Wang, Bing / Zhang, Gai et al. | 2023
- 6415
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Thermally Induced Current Bifurcation and Drastically Collapse of Output Optical Power in VCSEL ArraysJin, Dongyue / Zhou, Yuxin / Guan, Baolu et al. | 2023
- 6421
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Thermal Management of High-Power Vertical-Cavity Surface-Emitting Laser ArraysYuan, Chongxian / Li, Yang / Wang, Yongli et al. | 2023
- 6427
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Determining 2-D Optical Characteristics- Dependent Surface Temperature of Organic Light-Emitting DiodeLiu, Guanhong / Chen, Huanting / Lin, Shuo et al. | 2023
- 6435
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High-Performance, Flexible Perovskite Photodetector Based on CsPbBr3 NanonetZhou, Hai / Wang, Rui / Zhang, Xuhui et al. | 2023
- 6439
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Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS JunctionChaudhuri, Sandeep K. / Nag, Ritwik / Ahmad, Iftikhar et al. | 2023
- 6446
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Ultrahigh Sensitive Phototransistor Based on MoSe2/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband PhotodetectionLi, Haiying / Cai, Xinwei / Wang, Jianyuan et al. | 2023
- 6452
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A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved PerformanceKong, Moufu / Yu, Ning / Zhang, Bingke et al. | 2023
- 6459
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Analysis of Single Event Response and Hardening Methods in 1.2 kV SiC Power MOSFET With Multicell and Termination StructureLu, Jiang / Song, Wenjun / Liu, Tao et al. | 2023
- 6465
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Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-SiJoshi, Vipin / Roy Chaudhuri, Rajarshi / Dutta Gupta, Sayak et al. | 2023
- 6473
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Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current StressMa, Dezhi / He, Zhiyuan / Chen, Yuan et al. | 2023
- 6480
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Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFETXiao, Yiping / Liu, Chaoming / Zhang, Yanqing et al. | 2023
- 6486
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Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT With a Self-Adapted Parasitic ThyristorDai, Kaiwei / Wei, Jie / Wang, Junnan et al. | 2023
- 6492
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An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit PerformanceSun, Ruizhe / Deng, Xiaochuan / Li, Xu et al. | 2023
- 6498
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Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors—Part I: Experimental MethodsMukherjee, C. / Rezgui, H. / Wang, Y. et al. | 2023
- 6505
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Nanoscale Thermal Transport in Vertical Gate- All-Around Junctionless Nanowire Transistors— Part II: Multiphysics SimulationRezgui, H. / Mukherjee, C. / Wang, Y. et al. | 2023
- 6512
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Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress ConditionVici, Andrea / Degraeve, Robin / Franco, Jacopo et al. | 2023
- 6520
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An Energy-Efficient Solid-State Organic Device Array for Neuromorphic ComputingHu, Lan Shen / Fattori, Marco / Schilp, Winston et al. | 2023
- 6526
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Plantar Pressure Monitoring System Based on a Flexible Pressure Sensor Array for Human Walking Feature RecognitionZhang, Peng / Wang, Xiaofei / Li, Yuxia et al. | 2023
- 6534
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On-Chip Fully Integrated Thermoelectric Devices Designed on Standard CMOS ProcessSugiura, Takaya / Watanabe, Yuta / Yamamura, Kenta et al. | 2023
- 6540
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Linear and Saturated Behaviors of Gyrotron Oscillator With a Misaligned Electron BeamChen, Xianfei / Xiao, Houxiu / Huang, Yu et al. | 2023
- 6548
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Design and Experimental Study of Double Periodic Permanent Magnetic Focusing SystemZhang, Xiaoqing / Feng, Jinjun / Du, Yinghua et al. | 2023
- 6553
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Tailoring Beam Shape Using a Coplanar Quadrupole Focusing Structure in Carbon Nanotube Cold Cathode Electron GunWang, Lizhou / Zhang, Yu / Hong, Tianzeng et al. | 2023
- 6558
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Development of Higher Efficiency MW-Power 230-GHz Gyrotron With Nonadiabatic Electron GunGlyavin, M. Yu. / Goldenberg, A. L. / Krupin, D. S. et al. | 2023
- 6563
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Multiphysics Field Effects of Eddy Currents in Gyrotron With Pulsed MagnetWang, Zengwen / Zhang, Shaozhe / Xiao, Houxiu et al. | 2023
- 6571
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Compact, Stable, Repetitive GW-Level S-Band Multibeam Relativistic Klystron Amplifier Operating Over a Longer Period in a Lower Magnetic FieldSun, Limin / Huang, Hua / Lu, Chaozheng et al. | 2023
- 6579
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Small-Signal Theory of the Gyrotron Amplifier With a Zigzag Quasi-Optical SystemNovak, Ekaterina M. / Samsonov, Sergey V. / Savilov, Andrei V. et al. | 2023
- 6587
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Design of MW-Class Coaxial Gyrotron Cavities With Mode-Converting Corrugation Operating at the Second Cyclotron HarmonicPeponis, Dimitrios V. / Avramidis, Konstantinos A. / Chelis, Ioannis G. et al. | 2023
- 6594
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Planar-Integrated PPM Focusing System Design for W-Band Multibeam Folded Waveguide TWTsJi, Huanli / Yang, Jinsheng / Sun, Ran et al. | 2023
- 6600
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Fatigue of NbOx-Based Locally Active Memristors—Part I: Experimental CharacteristicsDing, Yanting / Li, Yu / Jia, Shujing et al. | 2023
- 6606
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Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and ModelingLi, Yu / Ding, Yanting / Zhang, Xumeng et al. | 2023
- 6613
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Ferroelectric FET-Based Time-Mode Multiply-Accumulate Accelerator: Design and AnalysisRafiq, Musaib / Kaur, Tanveer / Gaidhane, Amol et al. | 2023
- 6622
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Unveiling the Interfacial Behavior of Au Contacted MoS2 Atomristor and the Role of Point DefectsShah, Asif A. / Kumar, Jeevesh / Dar, Aadil Bashir et al. | 2023
- 6630
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Co3O4/ZnO/CNTs Photoelectrochemical Sensor for Sensitive and Selective LA DetectionTao, Bairui / Yang, Wenbo / Miao, Fengjuan et al. | 2023
- 6637
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Performance Analysis and Read Voltage Optimization of E-Beam Evaporated Amorphous SnO2-Based Cross-Cell Resistive Switching DeviceSingh, Chandra Prakash / Singh, Vivek Pratap / Ranjan, Harsh et al. | 2023
- 6644
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Design of 3-D Interface in Synaptic Transistors With Attojoule Power by Electrospinning Aligned Nanofibers for Neuromorphic ComputingWen, Sheng-Kai / Chen, Liang-Hao / Li, Jun et al. | 2023
- 6651
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Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer DepositionZhang, Jie / Lin, Zehao / Zhang, Zhuocheng et al. | 2023
- 6658
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Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack SolutionsFranco, J. / Arimura, H. / de Marneffe, J.-F. et al. | 2023
- 6665
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Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical UnderstandingZhang, Dong / Wu, Jixuan / Kong, Qiwen et al. | 2023
- 6673
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Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated Into Eight Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost IONChen, Wei-Jen / Liu, Yi-Chun / Chen, Yun-Wen et al. | 2023
- 6680
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Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel TransistorsWu, Wen-Chia / Hung, Terry Y. T. / Sathaiya, D. Mahaveer et al. | 2023
- 6687
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A Simulation Study of Bipolar I-MOS for ESD ProtectionLahgere, Avinash / Gupta, Dhruv Shikhar et al. | 2023
- 6691
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Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDsChen, Jiawei / Liu, Junbo / Zou, Wensong et al. | 2023
- 6695
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An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash MemoryAhn, Sangmin / Jo, Hyungjun / Kim, Sungju et al. | 2023
- 6699
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Experimental Robust Spontaneous Synchronizations in Coupled NbOx Oscillation Neurons for Unconventional ComputingKim, Hyun Wook / Kang, Seung-Youl / Moon, Jaehyun et al. | 2023
- 6703
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Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers| 2023
- 6704
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TechRxiv: Share Your Preprint Research with the World!| 2023
- C1
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Table of Contents| 2023
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2023
- C3
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IEEE Transactions on Electron Devices Information for Authors| 2023