Journal of Materials Science: Materials in Electronics
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Hydrothermal preparation and properties of nanocrystalline ZnS:MnRen, Zhouyun / Yang, Hua / Shen, Lianchun et al. | 2007
- 1
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DRIP-XII Conference 2007Zeimer, Ute / Tomm, Jens W. / Brozel, Mike R. et al. | 2008
- 4
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Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline siliconRamspeck, K. / Bothe, K. / Schmidt, J. et al. | 2008
- 5
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Electrical properties of some Y2O3 and/or Fe2O3-containing lithium silicate glasses and glass-ceramicsGomaa, Mohamed M. / Darwish, Hussein / Salman, Saad M. et al. | 2007
- 9
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Infrared light emission from porous siliconJia, Guobin / Seifert, Winfried / Arguirov, Tzanimir et al. | 2008
- 14
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Lithium-drifted, silicon radiation detectors for harsh radiation environmentsGrant, J. / Buttar, C. / Brozel, M. et al. | 2008
- 17
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Field emission properties of carbon nanotube pastes examined using design of experimentsDarsono, Nono / Kwon, Sung-Wook / Yoon, Dang-Hyok et al. | 2007
- 19
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Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurementsYamada-Kaneta, Hiroshi / Goto, Terutaka / Nemoto, Yuichi et al. | 2008
- 24
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On the characterisation of grown-in defects in Czochralski-grown Si and GeVanhellemont, J. / Steenbergen, J. / Holsteyns, F. et al. | 2008
- 25
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Stability of impurity–vacancy pairs in germanium carbideChroneos, Alexander et al. | 2007
- 29
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Dielectric and piezoelectric properties of Bi0.5Na0.5TiO3–BaNb2O6 lead-free piezoelectric ceramicsZhou, Changrong / Liu, Xinyu et al. | 2007
- 32
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Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski siliconWang, Weiyan / Yang, Deren / Yu, Xuegong et al. | 2008
- 33
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Encapsulation of silver particles using co-axial jettingSamarasinghe, S. R. / Balasubramanian, K. / Edirisinghe, M. J. et al. | 2007
- 36
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Radially non-uniform interaction of nitrogen with silicon wafersAkhmetov, V. / Kissinger, G. / Fischer, A. et al. | 2008
- 39
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The effect of glass addition on the dielectric properties of barium strontium titanatePriya Rani, B. R. / Sebastian, M. T. et al. | 2007
- 41
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Gettering of iron in silicon by boron implantationHaarahiltunen, A. / Talvitie, H. / Savin, H. et al. | 2008
- 45
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Characterization of poly(vinylidene fluoride-trifluoroethylene) 50/50 copolymer films as a gate dielectricWi, Soojin / Senthilkumar, N. / Rhee, Shi-Woo et al. | 2007
- 46
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Microstructure of a-plane ( Formula Not Shown ) GaN ELOG stripe patterns with different in-plane orientationWernicke, T. / Zeimer, U. / Herms, M. et al. | 2008
- 46
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Microstructure of a-plane ( $$2\bar{1}\bar{1}0$$ ) GaN ELOG stripe patterns with different in-plane orientationWernicke, Tim / Zeimer, Ute / Herms, Martin et al. | 2008
- 51
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Preparation and characterization of Co–Fe–B thin films produced by electroless depositionDadvand, N. / Jarjoura, G. / Kipouros, G. J. et al. | 2007
- 51
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Anisotropic strain on phonons in a-plane GaN layers studied by Raman scatteringIrmer, G. / Brumme, T. / Herms, M. et al. | 2008
- 58
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Cathodoluminescence study of GaN-based film structuresJiang, D. S. / Jahn, U. / Chen, J. et al. | 2008
- 61
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Characterization of Sn-doped BST thin films on LaNiO3–coated Si substrateHu, Wencheng / Yang, Chuanren / Liu, Xiaobo et al. | 2007
- 64
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Irradiation effects on AlGaN HFET devices and GaN layersGnanapragasam, Sonia / Richter, Eberhard / Brunner, Frank et al. | 2008
- 67
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Activation kinetics of the As acceptor in HgCdTeShaw, D. / Capper, P. et al. | 2007
- 68
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Study of in-depth strain variation in ion-irradiated GaNHerms, Martin / Zeimer, Ute / Sonia, Gnanapragasam et al. | 2007
- 73
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Band offset diagnostics of advanced dielectricsEdelman, Piotr / Wilson, Marshall / D’Amico, John et al. | 2008
- 75
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Electrical properties and interfacial reaction of BGA package with underfillNoh, Bo-In / Jung, Seung-Boo et al. | 2007
- 79
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Interpretation of lifetime and defect spectroscopy measurements by generalized rate equationsHahn, T. / Schmerler, S. / Hahn, S. et al. | 2008
- 81
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Effect of zinc additions on structure and properties of Sn–Ag eutectic lead-free solder alloyKamal, Mustafa / Gouda, El Said et al. | 2007
- 83
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Photoelastic strain measurement in GaP (100) wafers under external stressesFukuzawa, M. / Yamada, M. et al. | 2008
- 85
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Influences of particle size upon room temperature structure of BaTiO3 thin films on p-Si substratesMin, Ki-Deuk / Lee, Jongwon / Lee, Taek Yeong et al. | 2007
- 87
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Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodesRenaud, Cédric / Josse, Yves / Lee, Chih-Wen et al. | 2008
- 91
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Zero and negative temperature coefficients of resistivity of rapidly solidified Bi–Sn alloys using melt-spinning techniqueKamal, Mustafa / El-Ashram, Tarek et al. | 2007
- 92
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Effect of electrical operation on the defect states in organic semiconductorsNguyen, Thien Phap / Renaud, Cédric / Huang, Chun Hao et al. | 2008
- 96
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Defects in nanostructures with ripened InAs/GaAs quantum dotsNasi, L. / Bocchi, C. / Germini, F. et al. | 2008
- 101
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Thermal instability of electron traps in InAs/GaAs quantum dot structuresKaniewska, M. / Engström, O. / Kaczmarczyk, M. et al. | 2008
- 107
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Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field methodFrigeri, C. / Attolini, G. / Bosi, M. et al. | 2008
- 111
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Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructuresWosinski, Tadeusz / Figielski, Tadeusz / Morawski, Andrzej et al. | 2008
- 115
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Point defects in SiGe alloys: structural guessing based on electronic transition analysisMesli, A. / Kruszewski, P. / Dobaczewski, L. et al. | 2007
- 122
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Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopyOgura, Atsushi / Kakemura, Yasuto / Kosemura, Daisuke et al. | 2008
- 127
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Ultra high-speed characterization of multicrystalline Si wafers by photoluminescence imaging with HF immersionSugimoto, H. / Tajima, M. et al. | 2008
- 132
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Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafersInoue, M. / Sugimoto, H. / Tajima, M. et al. | 2008
- 135
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Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imagingSchulz, Kristian / Geiler, Hans D. / Herden, Marc et al. | 2008
- 140
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Study of the degradation of AlGaAs-based high-power laser bars: V defectsMartín-Martín, A. / Avella, M. / Pommiès, M. et al. | 2007
- 145
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Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studiesBull, Stephen / Tomm, Jens W. / Larkins, Eric C. et al. | 2008
- 150
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Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectancePierścińska, Dorota / Kozlowska, Anna / Pierściński, Kamil et al. | 2008
- 155
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Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damageBou Sanayeh, Marwan / Brick, Peter / Schmid, Wolfgang et al. | 2007
- 160
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Degradation model analysis of laser diodesHäusler, K. / Zeimer, U. / Sumpf, B. et al. | 2008
- 165
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Spatial variations of carrier and defect concentration in VGF GaAs:SiBaeumler, Martina / Börner, Frank / Kretzer, Ulrich et al. | 2007
- 171
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Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence studyAvella, Manuel / Jiménez, Juan / Pommereau, Frédéric et al. | 2008
- 176
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SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodesKirste, Lutz / Köhler, Klaus / Maier, Manfred et al. | 2007
- 182
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The evolution of the ion implantation damage in device processingPolignano, M. L. / Mica, I. / Bontempo, V. et al. | 2008
- 189
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Characterization of strained Si wafers by X-ray diffraction techniquesShimura, Takayoshi / Kawamura, Kohta / Asakawa, Masahiro et al. | 2008
- 194
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Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopyMontgomery, Paul / Anstotz, Freddy / Johnson, Gyasi et al. | 2007
- 199
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In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si filmsJenichen, B. / Kaganer, V. M. / Braun, W. et al. | 2007
- 203
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Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopyBittkau, K. / Carius, R. / Bielawny, A. et al. | 2008
- 208
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The origin and reduction of dislocations in Gallium NitrideOliver, R. A. / Kappers, M. J. / McAleese, C. et al. | 2008
- 215
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Initial process effects on the surface morphology and structural property of the AlN epilayersChen, Xiaohong / Li, Shuping / Kang, Junyong et al. | 2008
- 219
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Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial filmChen, Bin / Chen, Jun / Sekiguchi, Takashi et al. | 2008
- 224
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High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiCKamiński, Paweł / Kozłowski, Roman / Miczuga, Marcin et al. | 2008
- 229
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Electronic structures of ZnO(0001)-Zn and (000−1)-O polar surfacesZhou, Changjie / Kang, Junyong et al. | 2008
- 234
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Evaluation of photoelectrical properties of Bi doped CdTe crystalsKadys, A. / Jarasiunas, K. / Saucedo, E. et al. | 2008
- 239
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Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methodsFrantskevich, A. V. / Saad, A. M. / Mazanik, A. V. et al. | 2008
- 243
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Dislocation-related photoluminescence from processed SiMisiuk, Andrzej / Zhuravlev, Konstantin S. / Jung, Wojciech et al. | 2007
- 248
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Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap statesAbdi, M. A. / Djeffal, F. / Arar, D. et al. | 2007
- 254
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Structure properties of carbon implanted silicon layersNussupov, K. Kh. / Beisenkhanov, N. B. / Valitova, I. V. et al. | 2008
- 263
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Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealingChow, Lee / Gonzalez, J. C. / Barco, E. et al. | 2007
- 269
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White beam topography of 300 mm Si wafersDanilewsky, A. N. / Wittge, J. / Rack, A. et al. | 2007
- 273
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Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenationZinchuk, O. / Saad, A. / Drozdov, N. et al. | 2008
- 277
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SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealingYakimov, E. B. / Privezentsev, V. V. et al. | 2008
- 281
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Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopyTokuda, Yutaka / Seo, Takeshi et al. | 2008
- 285
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Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter depositionClaudio, Gianfranco / Calnan, Sonya / Bass, Kevin et al. | 2007
- 289
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Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatmentsFrigeri, C. / Serényi, M. / Csik, A. et al. | 2007
- 294
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Raman scattering characterization of Ge-composition in bulk Si1−x Ge x with compositional variationIslam, M. R. / Yamada, M. et al. | 2007
- 299
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New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devicesAdachi, Masahiro / Hashimoto, Yutaka / Kanzaki, Katsuhisa et al. | 2008
- 303
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Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFrigeri, C. / Attolini, G. / Bosi, M. et al. | 2008
- 307
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Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaNDierre, B. / Yuan, X. L. / Yao, Y. Z. et al. | 2008
- 311
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Correlation between the free carrier lifetime and total amount of deep centers in ZnO single crystalsGavryushin, Vladimir / Kadys, Arunas / Aleksiejunas, Ramunas et al. | 2007
- 316
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWsSabooni, Mahmood / Esmaeili, Morteza / Haratizadeh, Hamid et al. | 2008
- 319
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Cathodoluminescent investigations of In x Ga1−x N layersDomracheva, Yana V. / Jmerik, Valentin N. / Popova, Tatiana B. et al. | 2008
- 324
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EBIC imaging using scanning transmission electron microscopy: experiment and analysisTanaka, Shigeyasu / Tanaka, Hiroki / Kawasaki, Tadahiro et al. | 2008
- 328
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Explanation of positive and negative PICTS peaks in SI-GaAsSchmerler, S. / Hahn, T. / Hahn, S. et al. | 2008
- 333
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Study of Schottky diodes made on Mn doped p-type InPZdansky, Karel / Kozak, Halyna / Sopko, Bruno et al. | 2007
- 338
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Influence of doping on the reliability of AlGaInP LEDsAltieri-Weimar, Paola / Jaeger, Arndt / Lutz, Thomas et al. | 2008
- 342
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Analysis of dislocation cell patterns in as-grown compound materials (GaAs, CaF2)Juda, Uta / Frank-Rotsch, Christiane / Rudolph, Peter et al. | 2008
- 347
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Statistical methods of determining the QD dimensions based on atomic force microscopy measurementsPiotrowski, T. / Kaczmarczyk, M. et al. | 2008
- 351
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Omega-Scan: an X-ray tool for the characterization of crystal propertiesBerger, Hans / Bradaczek, Hans-Arthur / Bradaczek, Hans et al. | 2007
- 356
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Application of computational intelligence to analysis of PITS spectral images for defect centres in semi-insulating materialsJankowski, Stanisław / Kamiński, Pawel / Będkowski, Janusz et al. | 2008
- 362
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Local cathodoluminescent study of the multilayers semiconductors nanostructuresZamoryanskaya, Maria V. / Konnikov, Samuil G. et al. | 2008
- 366
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The effects of oxygen vacancies on the electronic properties of V2O5−xLi, Zhi-Yang / Wu, Qi-Hui et al. | 2007
- 371
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Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay techniqueSaad, A. / Odrinski, A. / Tivanov, M. et al. | 2008
- 375
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Point defect structure in CdTe and ZnTe thin filmsKosyak, V. V. / Kolesnyk, M. M. / Opanasyuk, A. S. et al. | 2008
- 382
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Influence of plasma treatments on the microstructure and electrophysical properties of SnO x thin films synthesized by magnetron sputtering and sol–gel techniqueMukhamedshina, D. M. / Mit’, K. A. / Beisenkhanov, N. B. et al. | 2008