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Volume 15,
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Volume 15,
Issue 3
Volume 15,
Issue 2
Volume 15,
Issue 1
Volume 14,
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Volume 14,
Issue 8
Volume 14,
Issue 7
Volume 14,
Issue 6
Volume 14,
Issue 5
Volume 14,
Issue 4
Volume 14,
Issue 3
Volume 14,
Issue 2
Volume 14,
Issue 1
Volume 13,
Issue 12
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Volume 13,
Issue 8
Volume 13,
Issue 7
Volume 13,
Issue 6
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Volume 13,
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Volume 13,
Issue 3
Volume 13,
Issue 2
Volume 13,
Issue 1
Volume 12,
Issue 12
Volume 12,
Issue 11
Volume 12,
Issue 10
Volume 12,
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Volume 12,
Issue 8
Volume 12,
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Volume 12,
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Volume 12,
Issue 3
Volume 12,
Issue 2
Volume 12,
Issue 1
Volume 11,
Issue 12
Volume 11,
Issue 11
Volume 11,
Issue 10
Volume 11,
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Volume 11,
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Volume 11,
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Volume 11,
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Volume 11,
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Volume 11,
Issue 4
Volume 11,
Issue 3
Volume 11,
Issue 2
Volume 11,
Issue 1
Volume 10,
Issue 6
Volume 10,
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Volume 10,
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Volume 10,
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Volume 10,
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Volume 10,
Issue 1
>
Table of contents
279
Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling
Chunbo Zhang,
/ Leijun Li,
et al.
| 2011
279
Silicon and Column IV Semiconductor Devices Characterization and Design of Through-Silicon Via Arrays in Three-Dimensional ICs Based on Thermomechanical Modeling
Zhang, C
et al.
| 2011
288
A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node
Seongjae Cho,
/ Won Bo Shim,
/ Yoon Kim,
et al.
| 2011
296
Asymmetric Drain Spacer Extension (ADSE) FinFETs for Low-Power and Robust SRAMs
Goel, A
/ Gupta, S K
/ Roy, K
et al.
| 2011
309
An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar
Chatterjee, A
/ Shrivastava, M
/ Gossner, H
et al.
| 2011
318
An Insight Into ESD Behavior of Nanometer-Scale Drain Extended NMOS (DeNMOS) Devices: Part II (Two-Dimensional Study-Biasing & Comparison With NMOS)
Chatterjee, A
/ Shrivastava, M
/ Gossner, H
et al.
| 2011
327
Monte Carlo Simulation of Leakage Currents in Formula Not Shown Capacitors
Jegert, G.
/ Kersch, A.
/ Weinreich, W.
et al.
| 2011
327
Monte Carlo Simulation of Leakage Currents in $ \hbox{TiN/ZrO}_{2}/\hbox{TiN}$ Capacitors
Jegert, G
/ Kersch, A
/ Weinreich, W
et al.
| 2011
327
Monte Carlo Simulation of Leakage Currents in TiN/ZrO2/TiN Capacitors
Jegert, G
et al.
| 2011
335
Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies
Xiaobin Yuan,
/ Shimizu, T
/ Mahalingam, U
et al.
| 2011
343
DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit Conditions
Liquan Wang,
/ Figueiredo, J M L
/ Ironside, C N
et al.
| 2011
348
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part I: Theory
Huszka, Zoltán
/ Céli, D
/ Seebacher, E
et al.
| 2011
357
A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part II: Implementation, Parameter Extraction and Verification
Huszka, Z
/ Céli, Didier
/ Seebacher, E
et al.
| 2011
364
Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETs
Tsunomura, T
/ Nishida, A
/ Hiramoto, T
et al.
| 2011
370
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications
Minghua Tang,
/ Xiaolei Xu,
/ Zhi Ye,
et al.
| 2011
376
Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories
de Sousa, J S
/ Peibst, R
/ Erenburg, M
et al.
| 2011
384
On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs
Kobayashi, M
/ Mitard, J
/ Irisawa, T
et al.
| 2011
392
A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage Variations
Panagopoulos, G
/ Roy, K
et al.
| 2011
404
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
Saurabh, S
/ Kumar, M J
et al.
| 2011
411
Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP
Pogany, D
/ Johnsson, D
/ Bychikhin, S
et al.
| 2011
419
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
Vitale, S A
/ Kedzierski, J
/ Healey, P
et al.
| 2011
427
Analysis of Transconductance Formula Not Shown in Schottky-Barrier MOSFETs
Choi, S. J.
/ Choi, C. J.
/ Kim, J. Y.
et al.
| 2011
427
Analysis of Transconductanpe (gm) in Schottky-Barrier MOSFETs
Choi, S-J
et al.
| 2011
427
Analysis of Transconductance $(g_{m})$ in Schottky-Barrier MOSFETs
Sung-Jin Choi,
/ Chel-Jong Choi,
/ Jee-Yeon Kim,
et al.
| 2011
433
Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs
Ioannidis, E G
/ Tsormpatzoglou, A
/ Tassis, D H
et al.
| 2011
441
Evaluating the Aluminum-Alloyed p+-Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy Measurements
Woehl, R
et al.
| 2011
441
Evaluating the Aluminum-Alloyed Formula Not Shown -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy Measurements
Woehl, R.
/ Gundel, P.
/ Krause, J.
et al.
| 2011
441
Evaluating the Aluminum-Alloyed $\hbox{p}^{+}$ -Layer of Silicon Solar Cells by Emitter Saturation Current Density and Optical Microspectroscopy Measurements
Woehl, Robert
/ Gundel, Paul
/ Krause, Jonas
et al.
| 2011
448
A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs
Xiaoxu Cheng,
/ Yan Wang,
et al.
| 2011
448
Compound Semiconductor Devices A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs
Cheng, X
et al.
| 2011
455
Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)
Mochizuki, K
/ Yokoyama, N
et al.
| 2011
460
Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
Maojun Wang,
/ Chen, K J
et al.
| 2011
466
Electrothermal Access Resistance Model for GaN-Based HEMTs
Thorsell, M
/ Andersson, K
/ Hjelmgren, H
et al.
| 2011
473
Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs
Zhi Hong Liu,
/ Geok Ing Ng,
/ Arulkumaran, S
et al.
| 2011
480
Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors
Ye Wang,
/ Xiao Wei Sun,
/ Goh, G K L
et al.
| 2011
480
Thin Film Devices Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors
Wang, Y
et al.
| 2011
486
Optoelectronics, Display, and Imaging InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 µm
Ong, D S G
et al.
| 2011
486
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 $\mu\hbox{m}$
Ong, D S G
/ Jo Shien Ng,
/ Yu Ling Goh,
et al.
| 2011
486
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 Formula Not Shown
Ong, D. S.
/ Ng, J. S.
/ Goh, Y. L.
et al.
| 2011
490
Vertically Mounted InGaN-on-Sapphire Light-Emitting Diodes
Zhu, L
/ Ma, Z T
/ Lai, P T
et al.
| 2011
495
Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique
Jin-Wei Shi,
/ Huang, H.-W
/ Kuo, F.-M
et al.
| 2011
501
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and Formula Not Shown Heterojunction Detectors
Itsuno, A. M.
/ Phillips, J. D.
/ Velicu, S.
et al.
| 2011
501
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and p-n Heterojunction Detectors
Itsuno, A M
et al.
| 2011
501
Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and $p\hbox{-}n$ Heterojunction Detectors
Itsuno, A M
/ Phillips, J D
/ Velicu, S
et al.
| 2011
508
Solid-State Power and High Voltage Devices Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor Switch
James, C
et al.
| 2011
508
Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor Switch
James, C
/ Hettler, C
/ Dickens, J
et al.
| 2011
512
Solid-State Device Phenomena Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum Computing
Hui, H T
et al.
| 2011
512
Theoretical Calculation of the Magnetic Resonance Frequency of the Electron Spin Embedded Inside a Silicon Host for Solid-State Quantum Computing
Hon Tat Hui,
/ Mirzaei, Hamidreza
et al.
| 2011
517
Experimental Analysis of Partial-SET State Stability in Phase-Change Memories
Braga, S
/ Cabrini, A
/ Torelli, G
et al.
| 2011
523
Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect Transistors
Chuan-Jia Xing,
/ Wen-Yan Yin,
/ Lei-Tao Liu,
et al.
| 2011
530
Stochastic Analysis and Design Guidelines for CNFETs in Gigascale Integrated Systems
Zarkesh-Ha, P
/ Shahi, A A M
et al.
| 2011
540
CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and Analysis
Yidong Liu,
/ Jiann-Shiun Yuan,
et al.
| 2011
547
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\hbox{SiO}_{2}$-Based Solid Electrolyte
Jie Jiang,
/ Jia Sun,
/ Aixia Lu,
et al.
| 2011
547
Molecular and Organic Devices Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by SiO2-Based Solid Electrolyte
Jiang, J
et al.
| 2011
547
Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by Formula Not Shown -Based Solid Electrolyte
Jiang, J.
/ Sun, J.
/ Lu, A.
et al.
| 2011
553
Oscillation Frequency of a Reflex-Triode Virtual Cathode Oscillator
Roy, A
/ Sharma, A
/ Mitra, S
et al.
| 2011
553
Vaccum Electron Devices Oscillation Frequency of a Reflex-Triode Virtual Cathode Oscillator
Roy, A
et al.
| 2011
562
Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated Formula Not Shown Gate-Oxide n-MOS Devices
Lee, T.
/ Banerjee, S. K.
et al.
| 2011
562
BRIEFS Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated HfO2 Gate-Oxide n-MOS Devices
Lee, T
et al.
| 2011
562
Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated $\hbox{HfO}_{2}$ Gate-Oxide n-MOS Devices
Tackhwi Lee,
/ Banerjee, S K
et al.
| 2011
567
A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges
Te-Kuang Chiang,
et al.
| 2011
572
Laser-Induced Resistance Fine Tuning of Integrated Polysilicon Thin-Film Resistors
Boulais, E
/ Fantoni, J
/ Chateauneuf, A
et al.
| 2011
576
Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
Liu, H G
/ Chang, H D
/ Sun, B
et al.
| 2011
579
Materials processing and reliability of 3D interconnects
| 2011
579
ANNOUNCEMENTS Call for Papers — Special Issue of IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Materials, Processing and Reliability of 3D Interconnects
| 2011
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Table of contents
| 2011
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IEEE Transactions on Electron Devices publication information
| 2011
C3
IEEE Transactions on Electron Devices information for authors
| 2011
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| 2011