Materials science in semiconductor processing
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Table of contents
- 133
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Correlation of DC and AC electrical properties of Al/p-Si structure by I–V–T and C(G/ω)–V–T measurementsÖzdemir, Orhan / Tatar, Beyhan / Yılmazer, Deneb et al. | 2009
- 142
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Ultrasound-assisted synthesis of ZnO semiconductor nanostructuresAzizian-Kalandaragh, Yashar / Khodayari, Ali / Behboudnia, M et al. | 2009
- 146
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Optical properties of SixGe1−x single crystals grown by liquid phase diffusionDerin, Hüseyin / Kantarlı, Kayhan / Yıldız, Mehmet et al. | 2009
- 151
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Stability of Cu/Ir/Si trilayer structure to moderate annealingLeu, L.C. / Norton, D.P. / Anderson, T.J. et al. | 2009
- 156
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A study of two-step growth and properties of In0.82Ga0.18As on InPZhang, Tiemin / Miao, Guoqing / Jin, Yixin et al. | 2009
- 161
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N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperatureMa, Xiaobo / Liu, Weili / Chen, Chao et al. | 2009
- 168
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Phase transformation of anatase–rutile crystals in doped and undoped TiO2 particles obtained by the oxidation of polycrystalline sulfideNahar, Mst. Shamsun / Zhang, Jing / Hasegawa, Kiyoshi et al. | 2009
- 175
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Study of minority carrier injection phenomenon on Schottky and plasma deposited p–n junction diodesÖzdemir, Orhan / Sel, Kıvanç et al. | 2009
- 185
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Iron precipitation in as-received Czochralski silicon during low temperature annealingZeng, Yuheng / Yang, Deren / Xi, Zhenqiang et al. | 2009
- 189
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Influence of migration anisotropy on the growth mechanismYu, Jianguo / Mao, Huibing / Jing, Weiping et al. | 2009
- 193
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Space charge limited currents and traps distribution in Ag–As–Te thin films glassesMahmoud Saad, Hussein / El-Sayed, Sobhia / Ahmed Amin, Gamal et al. | 2009
- 198
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Elastic, electronic and optical properties of the filled tetrahedral semiconductor α-LiCdAsBouhemadou, A. et al. | 2009