The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
<
Volume 269,
Issue 24
Volume 269,
Issue 23
Volume 269,
Issue 22
Volume 269,
Issue 21
Volume 269,
Issue 20
Volume 269,
Issue 19
Volume 269,
Issue 18
Volume 269,
Issue 17
Volume 269,
Issue 16
Volume 269,
Issue 15
Volume 269,
Issue 14
Volume 269,
Issue 13
Volume 269,
Issue 12
Volume 269,
Issue 11
Volume 269,
Issue 10
Volume 269,
Issue 9
Volume 269,
Issue 8
Volume 269,
Issue 7
Volume 269,
Issue 6
Volume 269,
Issue 5
Volume 269,
Issue 4
Volume 269,
Issue 3
Volume 269,
Issue 2
Volume 269,
Issue 1
Volume 268,
Issue 24
Volume 268,
Issue 23
Volume 268,
Issue 22
Volume 268,
Issue 21
Volume 268,
Issue 20
Volume 268,
Issue 19
Volume 268,
Issue 18
Volume 268,
Issue 17
Volume 268,
Issue 16
Volume 268,
Issue 15
Volume 268,
Issue 14
Volume 268,
Issue 13
Volume 268,
Issue 12
Volume 268,
Issue 11
Volume 268,
Issue 10
Volume 268,
Issue 9
Volume 268,
Issue 8
Volume 268,
Issue 7
Volume 268,
Issue 6
Volume 268,
Issue 5
Volume 268,
Issue 4
Volume 268,
Issue 3
Volume 268,
Issue 2
Volume 268,
Issue 1
Volume 267,
Issue 24
Volume 267,
Issue 23
Volume 267,
Issue 22
Volume 267,
Issue 21
Volume 267,
Issue 20
Volume 267,
Issue 19
Volume 267,
Issue 18
Volume 267,
Issue 17
Volume 267,
Issue 16
Volume 267,
Issue 15
Volume 267,
Issue 14
Volume 267,
Issue 13
Volume 267,
Issue 12
Volume 267,
Issue 11
Volume 267,
Issue 10
Volume 267,
Issue 9
Volume 267,
Issue 8
Volume 267,
Issue 7
Volume 267,
Issue 6
Volume 267,
Issue 5
Volume 267,
Issue 4
Volume 267,
Issue 3
Volume 267,
Issue 2
Volume 267,
Issue 1
Volume 266,
Issue 24
Volume 266,
Issue 23
Volume 266,
Issue 22
Volume 266,
Issue 21
Volume 266,
Issue 20
Volume 266,
Issue 19
Volume 266,
Issue 18
Volume 266,
Issue 17
Volume 266,
Issue 16
Volume 266,
Issue 15
Volume 266,
Issue 14
Volume 266,
Issue 13
Volume 266,
Issue 12
Volume 266,
Issue 11
Volume 266,
Issue 10
Volume 266,
Issue 9
Volume 266,
Issue 8
Volume 266,
Issue 7
Volume 266,
Issue 6
Volume 266,
Issue 5
Volume 266,
Issue 4
Volume 266,
Issue 3
Volume 266,
Issue 2
Volume 266,
Issue 1
Volume 265,
Issue 2
Volume 265,
Issue 1
Volume 264,
Issue 2
Volume 264,
Issue 1
Volume 263,
Issue 2
Volume 263,
Issue 1
Volume 262,
Issue 2
Volume 262,
Issue 1
Volume 261,
Issue 2
Volume 261,
Issue 1
Volume 260,
Issue 2
Volume 260,
Issue 1
Volume 259,
Issue 2
Volume 259,
Issue 1
Volume 258,
Issue 2
Volume 258,
Issue 1
Volume 257,
Issue 2
Volume 257,
Issue 1
Volume 256,
Issue 2
Volume 256,
Issue 1
Volume 255,
Issue 2
Volume 255,
Issue 1
Volume 254,
Issue 2
Volume 254,
Issue 1
Volume 253,
Issue 2
Volume 253,
Issue 1
Volume 252,
Issue 2
Volume 252,
Issue 1
Volume 251,
Issue 2
Volume 251,
Issue 1
Volume 250,
Issue 2
Volume 250,
Issue 1
Volume 249,
Issue 2
Volume 249,
Issue 1
Volume 248,
Issue 2
Volume 248,
Issue 1
Volume 247,
Issue 2
Volume 247,
Issue 1
Volume 246,
Issue 2
Volume 246,
Issue 1
Volume 245,
Issue 2
Volume 245,
Issue 1
Volume 244,
Issue 2
Volume 244,
Issue 1
Volume 243,
Issue 2
Volume 243,
Issue 1
Volume 242,
Issue 2
Volume 242,
Issue 1
Volume 241,
Issue 4
Volume 241,
Issue 1
Volume 240,
Issue 4
Volume 240,
Issue 3
Volume 240,
Issue 2
Volume 240,
Issue 1
Volume 239,
Issue 4
Volume 239,
Issue 3
Volume 239,
Issue 2
Volume 239,
Issue 1
Volume 238,
Issue 4
Volume 238,
Issue 1
Volume 237,
Issue 4
Volume 237,
Issue 3
Volume 237,
Issue 2
Volume 237,
Issue 1
Volume 236,
Issue 4
Volume 236,
Issue 1
Volume 235,
Issue 4
Volume 235,
Issue 1
Volume 234,
Issue 4
Volume 234,
Issue 3
Volume 234,
Issue 2
Volume 234,
Issue 1
Volume 233,
Issue 4
Volume 233,
Issue 1
Volume 232,
Issue 4
Volume 232,
Issue 1
Volume 231,
Issue 4
Volume 231,
Issue 1
Volume 230,
Issue 4
Volume 230,
Issue 1
Volume 229,
Issue 4
Volume 229,
Issue 3
Volume 229,
Issue 2
Volume 229,
Issue 1
Volume 228,
Issue 4
Volume 228,
Issue 1
Volume 227,
Issue 4
Volume 227,
Issue 3
Volume 227,
Issue 2
Volume 227,
Issue 1
Volume 226,
Issue 4
Volume 226,
Issue 3
Volume 226,
Issue 2
Volume 226,
Issue 1
Volume 225,
Issue 4
Volume 225,
Issue 3
Volume 225,
Issue 2
Volume 225,
Issue 1
Volume 222,
Issue 4
Volume 222,
Issue 3
Volume 222,
Issue 2
Volume 222,
Issue 1
Volume 217,
Issue 4
Volume 217,
Issue 3
Volume 217,
Issue 2
Volume 217,
Issue 1
Volume 215,
Issue 4
Volume 215,
Issue 3
Volume 215,
Issue 2
Volume 215,
Issue 1
Volume 211,
Issue 4
Volume 211,
Issue 3
Volume 211,
Issue 2
Volume 211,
Issue 1
Volume 210,
Issue 1
Volume 207,
Issue 4
Volume 207,
Issue 3
Volume 207,
Issue 2
Volume 207,
Issue 1
Volume 206,
Issue 1
Volume 205,
Issue 1
Volume 204,
Issue 1
Volume 203,
Issue 1
Volume 202,
Issue 1
Volume 201,
Issue 4
Volume 201,
Issue 3
Volume 201,
Issue 2
Volume 201,
Issue 1
Volume 199,
Issue 1
Volume 198,
Issue 4
Volume 198,
Issue 3
Volume 198,
Issue 2
Volume 198,
Issue 1
Volume 197,
Issue 4
Volume 197,
Issue 3
Volume 197,
Issue 2
Volume 197,
Issue 1
Volume 196,
Issue 4
Volume 196,
Issue 3
Volume 196,
Issue 2
Volume 196,
Issue 1
Volume 195,
Issue 4
Volume 195,
Issue 3
Volume 195,
Issue 2
Volume 195,
Issue 1
Volume 194,
Issue 4
Volume 194,
Issue 3
Volume 194,
Issue 2
Volume 194,
Issue 1
Volume 193,
Issue 4
Volume 193,
Issue 1
Volume 192,
Issue 4
Volume 192,
Issue 3
Volume 192,
Issue 2
Volume 192,
Issue 1
Volume 191,
Issue 4
Volume 191,
Issue 1
Volume 190,
Issue 4
Volume 190,
Issue 1
Volume 189,
Issue 4
Volume 189,
Issue 1
Volume 188,
Issue 4
Volume 188,
Issue 1
Volume 187,
Issue 4
Volume 187,
Issue 3
Volume 187,
Issue 2
Volume 187,
Issue 1
Volume 186,
Issue 4
Volume 186,
Issue 1
Volume 185,
Issue 4
Volume 185,
Issue 1
Volume 184,
Issue 4
Volume 184,
Issue 3
Volume 184,
Issue 2
Volume 184,
Issue 1
Volume 183,
Issue 4
Volume 183,
Issue 3
Volume 183,
Issue 2
Volume 183,
Issue 1
Volume 182,
Issue 4
Volume 182,
Issue 1
Volume 181,
Issue 4
Volume 181,
Issue 1
Volume 180,
Issue 4
Volume 180,
Issue 1
Volume 179,
Issue 4
Volume 179,
Issue 3
Volume 179,
Issue 2
Volume 179,
Issue 1
Volume 178,
Issue 4
Volume 178,
Issue 1
Volume 175,
Issue 1
Volume 174,
Issue 4
Volume 174,
Issue 3
Volume 174,
Issue 2
Volume 174,
Issue 1
Volume 173,
Issue 4
Volume 173,
Issue 3
Volume 173,
Issue 2
Volume 173,
Issue 1
Volume 172,
Issue 4
Volume 172,
Issue 1
Volume 171,
Issue 4
Volume 171,
Issue 3
Volume 171,
Issue 2
Volume 171,
Issue 1
Volume 170,
Issue 4
Volume 170,
Issue 3
Volume 170,
Issue 2
Volume 170,
Issue 1
Volume 169,
Issue 4
Volume 169,
Issue 1
Volume 168,
Issue 4
Volume 168,
Issue 3
Volume 168,
Issue 2
Volume 168,
Issue 1
Volume 164,
Issue 1
Volume 161,
Issue 1
Volume 160,
Issue 4
Volume 160,
Issue 3
Volume 160,
Issue 2
Volume 160,
Issue 1
Volume 159,
Issue 4
Volume 159,
Issue 3
Volume 159,
Issue 2
Volume 159,
Issue 1
Volume 158,
Issue 4
Volume 158,
Issue 1
Volume 157,
Issue 4
Volume 157,
Issue 1
Volume 156,
Issue 4
Volume 156,
Issue 1
Volume 155,
Issue 4
Volume 155,
Issue 3
Volume 155,
Issue 2
Volume 155,
Issue 1
Volume 154,
Issue 4
Volume 154,
Issue 1
Volume 153,
Issue 4
Volume 153,
Issue 1
Volume 152,
Issue 4
Volume 152,
Issue 3
Volume 152,
Issue 2
Volume 152,
Issue 1
Volume 151,
Issue 4
Volume 151,
Issue 1
Volume 150,
Issue 4
Volume 150,
Issue 1
Volume 149,
Issue 4
Volume 149,
Issue 3
Volume 149,
Issue 2
Volume 149,
Issue 1
Volume 148,
Issue 4
Volume 148,
Issue 1
Volume 147,
Issue 4
Volume 147,
Issue 1
Volume 146,
Issue 4
Volume 146,
Issue 1
Volume 145,
Issue 4
Volume 145,
Issue 3
Volume 145,
Issue 2
Volume 145,
Issue 1
Volume 144,
Issue 4
Volume 144,
Issue 1
Volume 143,
Issue 4
Volume 143,
Issue 3
Volume 143,
Issue 2
Volume 143,
Issue 1
Volume 142,
Issue 4
Volume 142,
Issue 3
Volume 142,
Issue 2
Volume 142,
Issue 1
Volume 141,
Issue 4
Volume 141,
Issue 1
Volume 140,
Issue 4
Volume 140,
Issue 3
Volume 140,
Issue 2
Volume 140,
Issue 1
Volume 139,
Issue 4
Volume 139,
Issue 1
Volume 138,
Issue 4
Volume 138,
Issue 1
Volume 136,
Issue 4
Volume 136,
Issue 1
Volume 135,
Issue 4
Volume 135,
Issue 1
Volume 134,
Issue 4
Volume 134,
Issue 3
Volume 134,
Issue 2
Volume 134,
Issue 1
Volume 133,
Issue 4
Volume 133,
Issue 1
Volume 132,
Issue 4
Volume 132,
Issue 3
Volume 132,
Issue 2
Volume 132,
Issue 1
Volume 131,
Issue 4
Volume 131,
Issue 1
Volume 130,
Issue 4
Volume 130,
Issue 1
Volume 129,
Issue 4
Volume 129,
Issue 3
Volume 129,
Issue 2
Volume 129,
Issue 1
Volume 128,
Issue complete
Volume 127,
Issue complete
Volume 126,
Issue 4
Volume 126,
Issue 1
Volume 125,
Issue 4
Volume 125,
Issue 1
Volume 124,
Issue 4
Volume 124,
Issue 3
Volume 124,
Issue 2
Volume 124,
Issue 1
Volume 123,
Issue 4
Volume 123,
Issue 1
Volume 122,
Issue 4
Volume 122,
Issue 3
Volume 122,
Issue 2
Volume 122,
Issue 1
Volume 121,
Issue 4
Volume 121,
Issue 1
Volume 120,
Issue 4
Volume 120,
Issue 1
Volume 119,
Issue 4
Volume 119,
Issue 3
Volume 119,
Issue 2
Volume 119,
Issue 1
Volume 118,
Issue 4
Volume 118,
Issue 1
Volume 117,
Issue 4
Volume 117,
Issue 3
Volume 117,
Issue 2
Volume 117,
Issue 1
Volume 116,
Issue 4
Volume 116,
Issue 1
Volume 115,
Issue 4
Volume 115,
Issue 1
Volume 114,
Issue 4
Volume 114,
Issue 3
Volume 114,
Issue 2
Volume 114,
Issue 1
Volume 113,
Issue 4
Volume 113,
Issue 1
Volume 112,
Issue 4
Volume 112,
Issue 1
Volume 111,
Issue 4
Volume 111,
Issue 3
Volume 111,
Issue 2
Volume 111,
Issue 1
Volume 110,
Issue com
Volume 109,
Issue com
Volume 108,
Issue 4
Volume 108,
Issue 3
Volume 108,
Issue 2
Volume 108,
Issue 1
Volume 107,
Issue 4
Volume 107,
Issue 1
Volume 106,
Issue 4
Volume 106,
Issue 1
Volume 105,
Issue 4
Volume 105,
Issue 1
Volume 104,
Issue 4
Volume 104,
Issue 1
Volume 103,
Issue 4
Volume 103,
Issue 3
Volume 103,
Issue 2
Volume 103,
Issue 1
Volume 102,
Issue 4
Volume 102,
Issue 1
Volume 101,
Issue 4
Volume 101,
Issue 3
Volume 101,
Issue 2
Volume 101,
Issue 1
Volume 100,
Issue 4
Volume 100,
Issue 3
Volume 100,
Issue 2
Volume 100,
Issue 1
Volume 99,
Issue 4
Volume 99,
Issue 1
Volume 98,
Issue 4
Volume 98,
Issue 1
Volume 97,
Issue 4
Volume 97,
Issue 1
Volume 96,
Issue 4
Volume 96,
Issue 3
Volume 96,
Issue 2
Volume 96,
Issue 1
Volume 95,
Issue 4
Volume 95,
Issue 3
Volume 95,
Issue 2
Volume 95,
Issue 1
Volume 94,
Issue 4
Volume 94,
Issue 3
Volume 94,
Issue 2
Volume 94,
Issue 1
Volume 93,
Issue 4
Volume 93,
Issue 3
Volume 93,
Issue 2
Volume 93,
Issue 1
Volume 92,
Issue 4
Volume 92,
Issue 1
Volume 91,
Issue 4
Volume 91,
Issue 1
Volume 90,
Issue 4
Volume 90,
Issue 1
Volume 89,
Issue 4
Volume 89,
Issue 1
Volume 88,
Issue 4
Volume 88,
Issue 3
Volume 88,
Issue 2
Volume 88,
Issue 1
Volume 87,
Issue 4
Volume 87,
Issue 1
Volume 86,
Issue 4
Volume 86,
Issue 3
Volume 86,
Issue 2
Volume 86,
Issue 1
Volume 85,
Issue 4
Volume 85,
Issue 1
Volume 84,
Issue 4
Volume 84,
Issue 3
Volume 84,
Issue 2
Volume 84,
Issue 1
Volume 83,
Issue 4
Volume 83,
Issue 3
Volume 83,
Issue 2
Volume 83,
Issue 1
Volume 82,
Issue 4
Volume 82,
Issue 3
Volume 82,
Issue 2
Volume 82,
Issue 1
Volume 81,
Issue 2
Volume 81,
Issue 1
Volume 80,
Issue 2
Volume 80,
Issue 1
Volume 79,
Issue 4
Volume 79,
Issue 1
Volume 78,
Issue 4
Volume 78,
Issue 1
Volume 77,
Issue 4
Volume 77,
Issue 1
Volume 76,
Issue 4
Volume 76,
Issue 1
Volume 75,
Issue 4
Volume 75,
Issue 1
Volume 74,
Issue 4
Volume 74,
Issue 3
Volume 74,
Issue 2
Volume 74,
Issue 1
Volume 73,
Issue 4
Volume 73,
Issue 3
Volume 73,
Issue 2
Volume 73,
Issue 1
Volume 72,
Issue 4
Volume 72,
Issue 3
Volume 72,
Issue 2
Volume 72,
Issue 1
Volume 71,
Issue 4
Volume 71,
Issue 3
Volume 71,
Issue 2
Volume 71,
Issue 1
Volume 70,
Issue 4
Volume 70,
Issue 1
Volume 69,
Issue 4
Volume 69,
Issue 3
Volume 69,
Issue 2
Volume 69,
Issue 1
Volume 68,
Issue 4
Volume 68,
Issue 1
Volume 67,
Issue 4
Volume 67,
Issue 1
Volume 66,
Issue 4
Volume 66,
Issue 3
Volume 66,
Issue 2
Volume 66,
Issue 1
Volume 65,
Issue 4
Volume 65,
Issue 1
Volume 64,
Issue 4
Volume 64,
Issue 1
Volume 63,
Issue 4
Volume 63,
Issue 3
Volume 63,
Issue 2
Volume 63,
Issue 1
Volume 62,
Issue 4
Volume 62,
Issue 3
Volume 62,
Issue 2
Volume 62,
Issue 1
Volume 61,
Issue 4
Volume 61,
Issue 3
Volume 61,
Issue 2
Volume 61,
Issue 1
Volume 58,
Issue 4
Volume 58,
Issue 3
Volume 58,
Issue 2
Volume 58,
Issue 1
Volume 55,
Issue 4
Volume 55,
Issue 1
Volume 54,
Issue 4
Volume 54,
Issue 3
Volume 54,
Issue 1
Volume 53,
Issue 4
Volume 53,
Issue 3
Volume 53,
Issue 2
Volume 53,
Issue 1
Volume 52,
Issue 4
Volume 52,
Issue 3
Volume 52,
Issue 2
Volume 52,
Issue 1
Volume 51,
Issue 4
Volume 51,
Issue 3
Volume 51,
Issue 2
Volume 51,
Issue 1
Volume 50,
Issue 4
Volume 50,
Issue 1
Volume 49,
Issue 4
Volume 49,
Issue 1
Volume 48,
Issue 4
Volume 48,
Issue 1
Volume 47,
Issue 4
Volume 47,
Issue 3
Volume 47,
Issue 2
Volume 47,
Issue 1
Volume 46,
Issue 4
Volume 46,
Issue 1
Volume 45,
Issue 4
Volume 45,
Issue 1
Volume 44,
Issue 4
Volume 44,
Issue 3
Volume 44,
Issue 2
Volume 44,
Issue 1
Volume 43,
Issue 4
Volume 43,
Issue 3
Volume 43,
Issue 2
Volume 43,
Issue 1
Volume 42,
Issue 4
Volume 42,
Issue 3
Volume 42,
Issue 2
Volume 42,
Issue 1
Volume 39,
Issue 4
Volume 39,
Issue 1
Volume 36,
Issue 4
Volume 36,
Issue 3
Volume 36,
Issue 2
Volume 36,
Issue 1
Volume 35,
Issue 4
Volume 35,
Issue 3
Volume 35,
Issue 2
Volume 35,
Issue 1
Volume 34,
Issue 4
Volume 34,
Issue 3
Volume 34,
Issue 2
Volume 34,
Issue 1
Volume 33,
Issue 4
Volume 33,
Issue 1
Volume 32,
Issue 4
Volume 32,
Issue 1
Volume 31,
Issue 4
Volume 31,
Issue 3
Volume 31,
Issue 2
Volume 31,
Issue 1
Volume 30,
Issue 4
Volume 30,
Issue 3
Volume 30,
Issue 2
Volume 30,
Issue 1
Volume 29,
Issue 4
Volume 29,
Issue 3
Volume 29,
Issue 2
Volume 29,
Issue 1
Volume 28,
Issue 4
Volume 28,
Issue 3
Volume 28,
Issue 2
Volume 28,
Issue 1
Volume 27,
Issue 4
Volume 27,
Issue 3
Volume 27,
Issue 2
Volume 27,
Issue 1
Volume 26,
Issue 4
Volume 26,
Issue 3
Volume 26,
Issue 1
Volume 25,
Issue 1
Volume 24,
Issue 1
Volume 23,
Issue 4
Volume 23,
Issue 3
Volume 23,
Issue 2
Volume 23,
Issue 1
Volume 22,
Issue 4
Volume 22,
Issue 3
Volume 22,
Issue 1
Volume 21,
Issue 4
Volume 21,
Issue 1
Volume 18,
Issue 6
Volume 18,
Issue 1
Volume 17,
Issue 6
Volume 17,
Issue 5
Volume 17,
Issue 4
Volume 17,
Issue 3
Volume 17,
Issue 2
Volume 17,
Issue 1
Volume 16,
Issue 6
Volume 16,
Issue 5
Volume 16,
Issue 4
Volume 16,
Issue 1
Volume 15,
Issue 6
Volume 15,
Issue 1
Volume 14,
Issue 6
Volume 14,
Issue 4
Volume 14,
Issue 3
Volume 14,
Issue 2
Volume 14,
Issue 1
Volume 13,
Issue 3
Volume 13,
Issue 1
Volume 12,
Issue 4
Volume 12,
Issue 3
Volume 12,
Issue 2
Volume 12,
Issue 1
Volume 9,
Issue 4
Volume 9,
Issue 3
Volume 9,
Issue 2
Volume 9,
Issue 1
Volume 6,
Issue 3
Volume 6,
Issue 2
Volume 6,
Issue 1
Volume 5,
Issue 3
Volume 5,
Issue 2
Volume 5,
Issue 1
Volume 4,
Issue 3
Volume 4,
Issue 2
Volume 4,
Issue 1
Volume 3,
Issue 3
Volume 3,
Issue 1
Volume 2,
Issue 3
Volume 2,
Issue 1
Volume 1,
Issue 3
Volume 1,
Issue 2
Volume 1,
Issue 1
>
Table of contents
1
Ultra-shallow junction by laser annealing: Integration issues and modelling
La Magna, Antonino
/ Alippi, Paola
/ Deretzis, Ioannis
et al.
| 2006
9
An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing
Giubertoni, D.
/ Pepponi, G.
/ Bersani, M.
et al.
| 2006
13
Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon
Florakis, A.
/ Tsoukalas, D.
/ Zergioti, I.
et al.
| 2006
18
Optical strain measurement in ultrathin sSOI wafer
Munguía, J.
/ Chouaib, H.
/ de la Torre, J.
et al.
| 2006
22
HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1−xGex
Phen, M.S.
/ Craciun, V.
/ Jones, K.S.
et al.
| 2006
27
Strain relaxation in thin SiGe epilayers doped with carbon
Valakh, M.Ya.
/ Dzhagan, V.M.
/ Lytvyn, O.S.
et al.
| 2006
31
Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
Wang, D.
/ Ii, S.
/ Ikeda, K.
et al.
| 2006
37
CV characteristics of polycrystalline sige films with low GE concentration
Teixeira, Ricardo Cotrin
/ Doi, Ioshiaki
/ Diniz, José Alexandre
et al.
| 2006
41
Physical insight into ultra-shallow junction formation through atomistic modeling
Pelaz, L.
/ Aboy, M.
/ Lopez, P.
et al.
| 2006
46
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
Di Marino, M.
/ Napolitani, E.
/ Mastromatteo, M.
et al.
| 2006
50
Mechanism of de-activation and clustering of B in Si at extremely high concentration
Romano, L.
/ Piro, A.M.
/ Privitera, V.
et al.
| 2006
55
Lattice strain of B–B pairs formed by He irradiation in crystalline Si1−xBx/Si
Bisognin, G.
/ De Salvador, D.
/ Napolitani, E.
et al.
| 2006
59
The effect of thermal treatments on the local geometry around indium in In and In+C high dose implanted Si
d’Acapito, F.
/ Shimizu, Y.
/ Scalese, S.
et al.
| 2006
63
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
Martin-Bragado, Ignacio
/ Tian, S.
/ Johnson, M.
et al.
| 2006
68
Defects evolution and dopant activation anomalies in ion implanted silicon
Cristiano, F.
/ Lamrani, Y.
/ Severac, F.
et al.
| 2006
80
Transformation of {113} defects into dislocation loops mediated by the {111} rod-like defects
Boninelli, S.
/ Cherkashin, N.
/ Claverie, A.
et al.
| 2006
85
Annealing studies of cluster defects in ion-implanted silicon using high resolution DLTS
Gad, M.A.
/ Evans-Freeman, J.H.
et al.
| 2006
90
Experimental measurement of in-depth secondary defects distribution produced by helium implantation in silicon
Daliento, S.
/ Mele, L.
/ Spirito, P.
et al.
| 2006
94
Point defect engineering in preamorphized silicon enriched with fluorine
Impellizzeri, G.
/ Mirabella, S.
/ Priolo, F.
et al.
| 2006
100
Effect of fluorine on boron diffusion under interstitial injection from the surface
Kham, M.N.
/ El Mubarek, H.A.W.
/ Bonar, J.M.
et al.
| 2006
105
Advanced dopant and self-diffusion studies in silicon
Bracht, Hartmut
et al.
| 2006
113
Nitrogen in silicon: Transport and mechanical properties
Murphy, J.D.
/ Alpass, C.R.
/ Giannattasio, A.
et al.
| 2006
118
Modeling of hydrogen diffusion in silicon crystals
Saad, Anis
/ Velichko, O.I.
/ Shaman, Yu.P.
et al.
| 2006
122
The effect of arsenic fluence on the boron diffusion in the polysilicon on monosilicon during rapid thermal annealing
Merabet, A.
/ Marcon, J.
et al.
| 2006
126
Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
Ulyashin, A.G.
/ Christensen, J.S.
/ Svensson, B.G.
et al.
| 2006
130
Positron annihilation spectroscopy of vacancy complexes in SiGe
Slotte, J.
et al.
| 2006
136
Beyond SRP: Quantitative carrier profiling with M4PP
Clarysse, T.
/ Vandervorst, W.
/ Lin, R.
et al.
| 2006
141
Scanning spreading resistance microscopy of shallow doping profiles in silicon
Suchodolskis, A.
/ Hallén, A.
/ Gran, J.
et al.
| 2006
145
Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates
Cherkashin, N.
/ Hÿtch, M.J.
/ Snoeck, E.
et al.
| 2006
149
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED
Spessot, A.
/ Frabboni, S.
/ Balboni, R.
et al.
| 2006
154
Defects and impurities in SiGe: The effect of alloying
Mesli, A.
/ Kolkovsky, Vl.
/ Dobaczewski, L.
et al.
| 2006
162
Low-temperature radiation controlled diffusion of palladium and platinum in silicon for advanced lifetime control
Vobecký, J.
/ Hazdra, P.
et al.
| 2006
167
Fe and Cu in Si: Lattice sites and trapping at implantation-related defects
Wahl, U.
/ Correia, J.G.
/ Rita, E.
et al.
| 2006
172
The As2V complex in silicon: Band-gap levels, migration and annealing
Nielsen, H. Kortegaard
/ Mesli, A.
/ Dobaczewski, L.
et al.
| 2006
176
Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon
Nordmark, Heidi
/ Ulyashin, Alexander
/ Walmsley, John C.
et al.
| 2006
182
Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry
Villeneuve, C.
/ Paillard, V.
/ Bourdelle, K.K.
et al.
| 2006
187
Thermal donor formation in silicon enhanced by high-energy helium irradiation
Hazdra, P.
/ Komarnitskyy, V.
et al.
| 2006
192
Dielectric function of disorder in high-fluence helium-implanted silicon
Petrik, P.
/ Fried, M.
/ Lohner, T.
et al.
| 2006
196
Vibrational lifetimes of light impurities in silicon
Estreicher, S.K.
/ West, D.
et al.
| 2006
200
Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon
Kohli, K.K.
/ Davies, Gordon
/ Vinh, N.Q.
et al.
| 2006
205
Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si
Misiuk, A.
/ Londos, C.A.
/ Bak-Misiuk, J.
et al.
| 2006
210
Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies
Murin, L.I.
/ Lindström, J.L.
/ Davies, G.
et al.
| 2006
214
Effect of high pressure annealing on electrical properties of nitrogen and germanium doped silicon
Jung, W.
/ Misiuk, A.
/ Yang, D.
et al.
| 2006
217
Deep level generation in nitrogen-doped float-zoned silicon
Voronkova, G.I.
/ Batunina, A.V.
/ Moiraghi, L.
et al.
| 2006
222
Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide
Assaf, H.
/ Ntsoenzok, E.
/ Barthe, M.-F.
et al.
| 2006
227
Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?
Otto, G.
/ Hobler, G.
/ Pongratz, P.
et al.
| 2006
232
Observation of steplike sheet resistance increase of shallow doped bare silicon during initial contact to air
Kalkofen, Bodo
/ Burte, Edmund P.
et al.
| 2006
236
X-ray studies of ultra-thin Si wafers for mirror application
Sass, J.
/ Mazur, K.
/ Surma, B.
et al.
| 2006
241
Carbon surface diffusion and SiC nanocluster self-ordering
Pezoldt, J.
/ Trushin, Yu.V.
/ Kharlamov, V.S.
et al.
| 2006
246
Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs
Hayama, K.
/ Takakura, K.
/ Ohyama, H.
et al.
| 2006
250
2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device
Belaïd, M.A.
/ Ketata, K.
/ Gares, M.
et al.
| 2006
255
Hydrogen dilution effect on microstructure of Si thin film grown by catalyzer enhanced chemical vapor deposition
Kim, Han-Ki
et al.
| 2006
260
Grooving of grain boundaries in multicrystalline silicon: Effect on solar cell performance
Dimassi, W.
/ Bouaïcha, M.
/ Nouri, H.
et al.
| 2006
264
Combination of gettering and etching in multicrystalline silicon used in solar cells processing
Dimassi, W.
/ Bouaïcha, M.
/ Nouri, H.
et al.
| 2006
269
A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealing
Hassan, Moustafa M.
/ Ghannam, Moustafa Y.
/ Poortmans, Jef
et al.
| 2006
274
TEM study of PtSi contact layers for low Schottky barrier MOSFETs
Łaszcz, A.
/ Kątcki, J.
/ Ratajczak, J.
et al.
| 2006
278
Metal and organic contamination effects on the characteristics of thin oxides thermally grown on silicon based wafers
Borionetti, G.
/ Geranzani, P.
/ Orizio, R.
et al.
| 2006
CO2
Editorial board
| 2006
ix
Contents
| 2006
v
Title page
| 2006
vii
Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion
Napolitani, Enrico
/ Kuznetsov, Andrej
/ Skorupa, Wolfgang
et al.
| 2006