Vacuum
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Table of contents
- 291
-
Rotational and translational accommodation coefficients of nitrogen on nickel, silver and goldRamesh, V / Marsden, DJ et al. | 1974
- 295
-
Small mass spectrometers applied to large power plantsSmalley, J / Bloomer, RN et al. | 1974
- 301
-
The design and operation of a new extractor gauge for UHV pressure measurementsPittaway, LG et al. | 1974
- 307
-
Vacuum deposition rate measurements on thin polymer filmsde Wilde, W / de Mey, G et al. | 1973
- 309
-
New vacuum gauges with process control facilityEdwards High Vacuum et al. | 1974
- 309
-
High-vacuum feedthrus in mini-sizesCeramaseal Inc et al. | 1974
- 309
-
New resistivity unit improves freeze-dryingEdwards High Vacuum et al. | 1974
- 310
-
Electro-ion pump: new modelsGranville-Phillips Co et al. | 1974
- 310
-
Complete new range of quality flow-meters| 1974
- 317
-
902. The influence of electron-beam treatment on penetration of additives of film contacts into silicon substrate| 1974
- 317
-
904. Variations in life time of charge carriers in high-resistivity silicon at bombardment by boron and phosphorus ions| 1974
- 317
-
907. Electrical conductivity of zinc oxide in atomic nitrogen| 1974
- 317
-
910. Mossbauer spectroscopy of 57Fe implanted into metals| 1974
- 317
-
901. Calculation of the coefficients of diffusion of atoms and ions of mercury, cadmium and zinc in argon| 1974
- 317
-
909. A new method for the determination of the penetration depth of electron in insulators| 1974
- 317
-
906. Electronic spectra of absorption and radiation of naphtalene and naphtylamine molecules absorped by zeolites and some amorphous adsorbents| 1974
- 317
-
908. To the problem of difference in composition of charged and neutral particles sputtered by argon ion beam from gallium arsenide| 1974
- 317
-
911. Xenon ion ranges in polycrystalline gold| 1974
- 317
-
903. Diffusion of impurities implanted into silicon by ion bombardment| 1974
- 317
-
905. Barium adsorption on single films of copper, silver and iron| 1974
- 318
-
919. Reflection of slow ion of alkali metals from solid surfaces,| 1974
- 318
-
923. Energy spectrum of electrons of kinetic emission at high energy of bombarding ions| 1974
- 318
-
917. Changes in properties of Si-SiO2 interface at medium energy ion bombardment| 1974
- 318
-
921. Some peculiarities of angular, space and energy distribution of ions scattered by single crystal| 1974
- 318
-
920. Scattering of alkali ions by surface of metallic and semiconducting poly- and single crystals| 1974
- 318
-
922. Angular and energy distribution of electrons scattered by poly- and single crystal molybdenum| 1974
- 318
-
925. Investigation of negative ion sputtering of some metals at their bombardment with cesium ions| 1974
- 318
-
915. Investigation of real structure of GaAs by electron microscopy methods| 1974
- 318
-
918. Basic achievements and problems of investigation of interaction of atomic particles with solid surfaces| 1974
- 318
-
912. Changes in structure of germanium and silicon at ion bombardment and subsequent annealing| 1974
- 318
-
926. Spectral investigation of aggregates of phtalocyanine molecules in absorbed state| 1974
- 318
-
913. Investigation of surface layer of silicon after etching in high-frequency gas-discharge plasma| 1974
- 318
-
914.Formation and removal of SiO2 films on silicon surface in glow discharge| 1974
- 318
-
924. The effect of ion bombardment on emissivity of surface| 1974
- 318
-
916. Induced polarization of adsorbed molecules in intensive light field| 1974
- 319
-
927. Correlation between absorption hands and implanted alkali ions in Lif| 1974
- 319
-
933. Gold adsorption on clean germaniun field emitters| 1974
- 319
-
932. Evaluation of the nature of the radiative emission processes from lattice defect centres in cadmium telluride together with their associated quenching mechanisms| 1974
- 319
-
935. On the point defect production in electron-irradiated molybdenumn| 1974
- 319
-
938. Determination of He-Ne laser parameter using an intra-cavity rotatable reflector| 1974
- 319
-
931. Photoconductivity from electronic surface states in prism surfaces of zinc oxide crystals| 1974
- 319
-
939. A semi-empirical approach to CO2 laser kinetics| 1974
- 319
-
950. Development of relief structures on Si surfaces by ion bombardment| 1974
- 319
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934. The catalytic effect on the surface of a p-n junction| 1974
- 319
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936. Conductivity and stimulated emission in CdS under intense electron beam excitation| 1974
- 319
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928. The influence of chemisorption of oxygen on the luminescence of CdS single crystals| 1974
- 319
-
929. Xenon-133 diffusion and tapping in single-crystal uranium dioxide| 1974
- 319
-
937. Formation and annealing of isolation regions in silicon through Si| 1974
- 320
-
941. Increased efficiencyt and new CW transitions in the helium-iodine laser system| 1974
- 320
-
947. A high-vacuum sorption pump| 1974
- 320
-
942. Orifice probe for plasma diagnostics: II, Multi-parameter analysis| 1974
- 320
-
946. The limiting condition for sparkover in gases forming unstable negative ions| 1974
- 320
-
948. A magnetic discharge evacuation system| 1974
- 320
-
940. Dissociation mechanism in pulsed and continuous CO2 lasers| 1974
- 320
-
944. Microwave radiometric investigation of the positive column instability is pulsed nitrogen discharges| 1974
- 320
-
949. Magnetic-discharge evacuation system| 1974
- 320
-
945. Microwave multiple-pulse breakdown in nitric oxide| 1974
- 320
-
943. Measurement of wall hang-up time for the linear pinched discharge| 1974
- 321
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951. A semiconducting vacuum gauge| 1974
- 321
-
Thin film studies by X-ray fluorescence| 1974
- 321
-
950. An inversion magnetron manometer| 1974
- 321
-
959. Investigation of the perfectness degree of autoepitaxial germanium films| 1974
- 321
-
957. Investigation of migration of silicon in the process of growth of epitaxial gallium arsenide films from vapour phase| 1974
- 321
-
960. Growth of autoepitaxial germanium films on substrates of rectangular shape| 1974
- 321
-
952. The structure of vacuum evaporated selenium layers| 1974
- 321
-
955. Dispersion and piezoelectri coupling of Rayleigh acoustic surface waves in a layered CdSe on Y-Z-LiNbO3 structure| 1974
- 321
-
953. Temperature coefficient of resistance of annealed and agglomerated silver films| 1974
- 321
-
956. Structure change and resistivity step of evaporated Ge films in dependence on the substrate temperature| 1974
- 321
-
958. Crystalline phases in Si3N4 films on silicon| 1974
- 322
-
961. Observation of transitions 5D3-7Fj in cathodoluminescence of thin films of TbF3, ZnS-TbF3 and ZnS:Tb3+| 1974
- 322
-
969. On microrelief on partial superposition of tellurium and bismuth thin films| 1974
- 322
-
962. Space distribution of charged particles in a vacuum chamber at electron beam evaporation of substances| 1974
- 322
-
970. Microscopical pores in film structures metal-dielectric| 1974
- 322
-
976. Determination of wettability of substrates by island vacuum condensates| 1974
- 322
-
966. The influence of structure on mechanical properties of copper vacuum condensates| 1974
- 322
-
968. Autoepitaxial growth of GaAs in the system Ga(CH3)3-AsH3-H2| 1974
- 322
-
The influence of substrate temperature on scintillation characteristics of thin film detectors based on CsI(Na) single crystals| 1974
- 322
-
964. A method for measurement of thickness of thin dielectric films during the process of their evaporation in vacuum| 1974
- 322
-
967. Epitaxy of Cd on muscovite| 1974
- 322
-
971. Photoresistor for point exposure measurement| 1974
- 322
-
974. Doping of epitaxial silicon films by phosphorus and arsenic in vacuum| 1974
- 322
-
963. Utilization of a beam of inert gas ions for local formation of metallic films| 1974
- 322
-
965. Mechanical instabilities in thim films caused by substrate surface microrelief changes induced by illumination| 1974
- 322
-
973. Silicon nitride films in manufacture of metallized photomasks| 1974
- 322
-
975. Relation between electro-physical properties and structure of size-quantized Insb films| 1974
- 323
-
986. Investigation of molecular composition of vapours and structure of condensate at evaporation of some arsenic chalcogenides by laser radiation| 1974
- 323
-
982. Thermodynamic approach to diffusion-controlled epitaxial silicon deposition in flow system of SiCl4 + H2 mixtures| 1974
- 323
-
978. The influence of space charge on electrical conductivity of Al-Si3N4-Al structures| 1974
- 323
-
990. Electron diffraction investigation of structure of amorphous films of germanium telluride and selenide| 1974
- 323
-
980. Regularities of formation of structure and properties of films prepared by vacuum evaporation of alloys based on copper| 1974
- 323
-
983. Crystallization of amorphous films of silicon nitride at ion bombardment with subsequent annealing| 1974
- 323
-
988. Measurement of Hall voltage in thin-film Ti + SiO cermets| 1974
- 323
-
981. On temperature and velocity of metallic particles emitted from an evaporation into vacuum| 1974
- 323
-
987. Heat-sensitive thin films prepared by evaporation of TiO2 in vacuum| 1974
- 323
-
984. Thermal emf in thin films of the BiSb system| 1974
- 323
-
991. The dosing device for explosion evaporation of thin films| 1974
- 323
-
979. Structure and some electro-physical properties of TISbS2 films.| 1974
- 323
-
985. Electron diffraction investigation of In2S3 films prepared by vacuum deposition| 1974
- 323
-
977. Character of spontaneous deformation in barium titanate vacuum condensates| 1974
- 323
-
989. The role of electronic processes in the mechanisms of evaporation and formation of composition of binary semiconductor compounds with ionic bond| 1974
- 324
-
993. An apparatus for determination of the deposition rate of vacuum coatings| 1974
- 324
-
995. Structural changes of amorphous germanium in the annealing process| 1974
- 324
-
1002. Regularities of structure formation of films at vacuum evaporation of some pure metals and fractionating copper alloys| 1974
- 324
-
1003. Electron diffraction study of the local atomic arrangement in amorphous iron and nickel films| 1974
- 324
-
992. Measurement of thickness of thin films used in electron microscopy| 1974
- 324
-
1000. Recovery of quartz resonators used for measurement of thickness and deposition rate of thin films| 1974
- 324
-
997. An ellipsometric methd for measurement of dispersion and thickness of transparent films on metallic substrates| 1974
- 324
-
1001. Investigation of micromorphology of autoepitaxial gallium arsenide, the dependence on substrate orientation| 1974
- 324
-
999. An analysis of electron-ion methods of preparation of clean films of metals| 1974
- 324
-
996. Effect of narrow stripe cutting of a thin ferromagnetic film on its easy axis orientation| 1974
- 324
-
994. Structure and electric properties of copper selenide thin films| 1974
- 324
-
998. Absorption of light in pyrargirite and its amorphous films| 1974
- 324
-
1004. Selfdetection of ac Josephson currents in thin-film superconducting bridges| 1974
- 325
-
1005. Switching phenomenon and memory effect in thin-film hetero-junction of polycrystalline selenium-silver selenide| 1974
- 325
-
1006. On disturbance by a current of superconductivity in thin narrow films| 1974
- 325
-
1014. On the problem of nonlinear characterisation of channel electron multipliers| 1974
- 325
-
1019. Shock tubes for investigation of nonstationary plasma flow at high magnetic Reynolds numbers| 1974
- 325
-
1007. On hall mobility of electrons in the space charge region of CdSe films| 1974
- 325
-
1011. Determination of density of electron current to anode of a vacuum diode with point cathode operated in the regime of burst emission| 1974
- 325
-
1010. He-Ne laser with a delay line with nonlinearly gas| 1974
- 325
-
1021. Infrared-optical transducer| 1974
- 325
-
1017. Investigation of polarization of radiation from a continuous wave argon laser immerse in transversal magnetic field| 1974
- 325
-
1013. On the mechanism of formation of whiskers on electrodes of electron devices| 1974
- 325
-
1015. To the problem of dependence of dark currents of vacuum insulation on residual pressure| 1974
- 325
-
1008. Peculiarities of design investigation of He-Cd-Se laser| 1974
- 325
-
1012. Some possibilities of gas-discharge switching devices with liquid metal electrodes| 1974
- 325
-
1009. Radiation of electromagnetic waves from plasma waveguides| 1974
- 325
-
1018. Investigation of materials for electrode walls of canal of open-cycle magnetohydrodynamic generator with temperature of surface of 1400 to 1850°C| 1974
- 325
-
1016. Frequency stabilizationof CO2 laser| 1974
- 325
-
1020. Pulsed CO2 laser with enhanced pressure and pre-ionization on| 1974
- 326
-
1026. Acceleration of ions by relativistic electron beam| 1974
- 326
-
1033. Cathode-ray excited luminescence and thermoluminescence of a synthetic calcite monocrystal| 1974
- 326
-
Field emission studied of clean and contaminated silver tips| 1974
- 326
-
1030. Ion implantation doping of compound semiconductors| 1974
- 326
-
1032. Effect of heat treatment on the 0.93, 1.0 and 1.25 eV luminescence bands in n-GaAs| 1974
- 326
-
1025. Ions bombarding cathode of pulsed plasma accelerator and their participation in generation of heat-flows| 1974
- 326
-
1024. Investigation of the ionization zone in two-lens accelerator with closed drift of electrons| 1974
- 326
-
1027. Piezoresistance in n-type silicon inversion layers at low temperatures| 1974
- 326
-
1029. Combined hopping and tunnelling mechanism of electro transport and doping effects in chloranil-trimethylamine charge-transfer complex| 1974
- 326
-
1034. Investigation of p-n junctions with and without oxide layer with the aid of electron mirror microscopy at shadow imaging| 1974
- 326
-
1022. Controlled discharger with magnetic field| 1974
- 326
-
1028. Investigation of the anisotropy of surface conductance in n-type germanium| 1974
- 326
-
1023. Energy characteristic of various modes of operation of pulsed coaxial plasma accelator| 1974
- 326
-
1035. Electron microscopical technique for investigation of structure of carbon, filaments| 1974
- 327
-
1036. Helium field ion microscope wityh ultrapure imaging gas| 1974
- 327
-
1043. New method for the determination of the composition and structure of an adsorbed film on any surface by high energy molecular beam| 1974
- 327
-
1040. Ion kinetic energy spectometry| 1974
- 327
-
1042. The influence of reactive gases on the ion bombardment-induced light emission from surfaces| 1974
- 327
-
1041. Composition and irradiation-temperature dependence of the uniaxial anisotropy energy of large-grain iron-nickel alloy thin films| 1974
- 327
-
1038. A device for cleaving single crystals in vacuum| 1974
- 327
-
1044. Surface phenomena at the time of the growth of canonical metallic points at high temperature| 1974
- 327
-
1039. Outgassing at electrical ageing of barium and strontium titanates| 1974
- 327
-
1037. Investigation of cathode luminescence of epitaxial p-n junctions in gallium phosphide with the aid of a scanning electron microscope| 1974
- 327
-
1045. The influence of inert gas pressure on phase stability of condensed zinc and cadmium sulphides| 1974
- 327
-
1046. Correlation between scattering of light and density of CdS single cyrstals at thermal treatment| 1974
- 328
-
1054. Interstitial superstructures of vanadium deuterides| 1974
- 328
-
1048. Investigation of interaction in the PbTe-Inte system| 1974
- 328
-
1049. Silicide formation at low temperatures by metal-SiO2 interaction| 1974
- 328
-
1055. The influence of boundaries on dislocation structure of profiled germanium single crystals| 1974
- 328
-
1059. Preparation and investigation of profiled germanium single crystals with large area of cross section| 1974
- 328
-
1053. Morphology of teragonal boron filaments| 1974
- 328
-
1050. The conduction band of cadmium arsenide| 1974
- 328
-
1058. Investigation of the process of group growth of germanium single crystals by the Stepanov method in rectangular thermal zone| 1974
- 328
-
1051. The influence of small amounts of nitrogen and carbon on the magnetic after-effect in neutron-irradiated iron. I. Low temperature relaxation| 1974
- 328
-
1057. Internal friction of alkali haloide whiskers| 1974
- 328
-
1047. Oxygen partial pressures of Mn-Zn ferrites| 1974
- 328
-
1056. Investigation of regularities of formation of dislocation structure in alkali haloide crystals of predetermined shape grown in solid cruclible by the Bridgman method| 1974
- 328
-
1060. Nature of phases and kinetics of reaction diffusion in mixture of nickel and aluminium powders| 1974
- 328
-
1061. Progress in single crystal growth of V3Si| 1974
- 328
-
1052. Studies of some point defects in YA103 and GdA105 single crystals| 1974
- 329
-
1076. Investigation of growth conditions and physical properties of single crystals of tungsten-rhenium alloys| 1974
- 329
-
1066. Internal friction of pure of tellurium single crystals| 1974
- 329
-
1071. High-temperature investigation of stationary and nonequilibrium electric conductivity of cadnium sulphide crystals| 1974
- 329
-
1063. Electric properties of Pb1−xSnxSe crystals grown from vapour phase| 1974
- 329
-
1074. The influence of cleanliness degree of dislocation structure of tungsten single crystals| 1974
- 329
-
1075. Investigation of structure and properties of oriented tungsten single crystals| 1974
- 329
-
1065. Elastic properties and tensile strength of germanium whiskers| 1974
- 329
-
1068. Kinetic properties of gadolinium at high temperatures| 1974
- 329
-
1077. Dislocations in molybdenum single crystals preprared by zonal melting| 1974
- 329
-
1067. Kinetic properties of scandium at high temperatures| 1974
- 329
-
1070. Internal friction and tensile strength of germanium whiskers| 1974
- 329
-
1072. Formation of zirconium dioxide in molybdenum alloy| 1974
- 329
-
1073. Thermal conditions and refining of metals at electron crucibleless zonal melting| 1974
- 329
-
1078. Investigation of structure and defects of molydbenum single crystals grown by electron-beam zonal melting| 1974
- 329
-
1079. Substructure of iron-nickel single crystals| 1974
- 329
-
1062. Photoconductivity and processes of trapping and recombination in CdGa2Se4 single crystals| 1974
- 329
-
1064. Formation of high-angle grain boundaries under the action of mechanical stresses| 1974
- 329
-
1069. X-ray diffraction investigations of structure of glassy As2Se3 and As2S3| 1974
- 330
-
1093. Alloy for cathode units| 1974
- 330
-
1091. X-ray photoelectrons spectra of solid copper compounds. Relation between presence of satellite peaks and state of copper oxidation.| 1974
- 330
-
1084. Investigation of oversaturation of solid solutions and temperature regime at quenching from liquid state| 1974
- 330
-
1085. Measurements of dislocation pinning and dislocation damping in cold-worked copper at 1 Hz| 1974
- 330
-
1087. Dislocation structures in dehydrogenated niobium| 1974
- 330
-
1080. On crystal growth at electron cruciblesless zonal melting| 1974
- 330
-
1081. The influence of high-temperature annealing on perfectness of structure of single crystals| 1974
- 330
-
1088. Utilization of the method of reduction melting in vacuum for determination of oxygen in rare earth elements| 1974
- 330
-
1095. Utilization of the adhesive VT-200 for low-temperature vacuum-tight seals| 1974
- 330
-
1086. The heat capacity of Ni3Fe experimental data from 300 to 1670°K| 1974
- 330
-
1090. Photoresponse measurements on ZuS polytypes| 1974
- 330
-
1082. Simultaneous growth of several single crystals of given shape and orientation| 1974
- 330
-
1083. Investigation of directed crystallization of Pb-Sn and Al-Cu alloys| 1974
- 330
-
1089. Investigation of defects in titanium dioxide by the method of depolarization thermostimulated currents| 1974
- 330
-
1092. Anisotropy of dislocation internal friction in copper whiskers| 1974
- 330
-
1094. Alloy for cathodes| 1974
- 331
-
1096. The influence of coating type on molybdenum on kinetics of wetting by melted glasses type ZS-5 and S48-3| 1974
- 331
-
1099. Investigation of the zone titanium-to-high alumina ceramics seals| 1974
- 331
-
1097. Investigation of some problem of interaction of alumina ceramics with metals at combination of metallization and sealing process| 1974
- 331
-
1098. The role of surface phenomena in the process of sealing ceramics to metals by sealing under pressure| 1974
- 331
-
1100. Mechanical characteristics of compressed non-matched glassto-metal seals and their dependence on contact pressure| 1974