IEEE Technology Policy and Ethics
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 363
-
A Novel In-Line ESICL-to-ESIW Transition for High-Performance Empty Substrate Integrated Microwave SystemsHerraiz, David / Esteban, Hector / Herraiz, Dario et al. | 2024
- 367
-
Broadband Partially Covered Microstrip-to-Waveguide Transition With Enhanced Radiation Suppression for Millimeter-Wave TransmissionHafeez-Ur-Rehman / Song, Ha Il / Park, Sean et al. | 2024
- 371
-
Low-Loss Horizontal Transition Between Rectangular Dielectric Waveguide and Microstrip Line at W-BandZhan, Hai-Bing / Li, Xiao-Chun / Sun, Chang-Sheng et al. | 2024
- 375
-
Waveguide-to-Microstrip Nonbinary Power DividersFantauzzi, Stefano / Valletti, Lorenzo / Bertolami, Sofia et al. | 2024
- 379
-
A Wideband DRWG Balun With Low Loss and Compact SizeShi, Xu / Xue, Ying / Yang, Yong-Jie et al. | 2024
- 383
-
A High-Power S-Band Waveguide Phase Shifter With Rotary RF ChokesCai, Jie / Wang, Jiaoyin / Ou, Meiling et al. | 2024
- 387
-
A Microstrip Linear-Phase BPF Using Dual-Band Negative Group Delay EqualizersZhang, Awei / Xu, Jinping / Liu, Zhiqiang et al. | 2024
- 391
-
23.8-GHz Acoustic Filter in Periodically Poled Piezoelectric Film Lithium Niobate With 1.52-dB IL and 19.4% FBWCho, Sinwoo / Barrera, Omar / Kramer, Jack et al. | 2024
- 395
-
Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHzAkso, Emre / Li, Weiyi / Clymore, Christopher et al. | 2024
- 399
-
InAlN/GaN MISHEMTs With 120 nm T-Shape Recessed Gates on Silicon With Excellent mm-Wave Noise PerformanceGao, Guangjie / Liu, Zhihong / Hao, Lu et al. | 2024
- 403
-
A Ku-Band Actively Coupled-Line True Time DelayDehmeshki, Diba / Tousi, Yahya et al. | 2024
- 407
-
A Ku-Band Fully Differential Current-Reuse Stacked Low-Noise Amplifier in 0.18-μm SiGe BiCMOS TechnologyThangarasu, Bharatha Kumar / Ma, Kaixue / Yeo, Kiat Seng et al. | 2024
- 411
-
A 4-to-6-GHz Cryogenic CMOS LNA With 4.4-K Average Noise Temperature in 22-nm FDSOIDas, Sayan / Raman, Sanjay / Bardin, Joseph C. et al. | 2024
- 415
-
A 2–20-GHz Ultrawideband High-Gain Low-Noise Amplifier With Enhanced StabilityWang, Lei / Cheng, Yu Jian et al. | 2024
- 419
-
A 2.8–3.8-GHz Reconfigurable GaAs Low-Noise Amplifier With Improved Blocker ToleranceWang, Jiashuai / Wen, Jie / Chi, Pei-Ling et al. | 2024
- 423
-
The Source Second-Harmonic-Manipulated Wideband Power Amplifier for a Series of Inverse Continuous ModesXuan, Xuefei / Cheng, Zhiqun / Hayes, Brendan et al. | 2024
- 427
-
Design and Analysis of a High Linearity Full Ka-Band Stacked-FET Power Amplifier Using 0.15-µm GaAs pHEMT ProcessHsieh, Yun-Che / Lin, Guan-Jhih / Tsai, Zuo-Min et al. | 2024
- 431
-
A 220-GHz Power Amplifier With 60-mW Pout and 23.5% PAE in 130-nm InP HBTGriffith, Zach / Urteaga, Miguel / Rowell, Petra et al. | 2024
- 435
-
A Ka-Band Frequency Doubler With a Broadband Matching Scheme for Efficiency OptimizationLu, Lin / Ma, Xujun / Feng, Jing et al. | 2024
- 439
-
Multi-Band Signal Generation Using Reconfigurable Harmonics in Coupled Oscillator LoopsMansha, Muhammad Waleed / Elmenshawi, Ahmed / Muralidharan, Sriram et al. | 2024
- 443
-
A 60–90 GHz Mixer-First Receiver With Adaptive Temperature-Compensation TechniqueYu, Yiming / Liu, Runyu / Zuo, Yujie et al. | 2024
- 447
-
Magneto-Dielectric Composites Characterization Using Resonant Sensor and Neural Network ModelingAlvarez-Botero, German / Lobato-Morales, Humberto / Hui, Katherine et al. | 2024
- 451
-
Connecting the Automotive Bands of Present and Future With a Tag for Inharmonic Radar at 76–81/134–141 GHzBraun, Tobias T. / Schopfel, Jan / Bredendiek, Christian et al. | 2024
- C1
-
Table of Contents| 2024
- C2
-
IEEE Microwave and Wireless Technology Letters publication| 2024
- C3
-
IEEE Microwave and Wireless Technology Letters Information for Authors| 2024