Vacuum
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 348
-
Notes for contributors| 1971
- 349
-
Shock-wave structure in a gas of ideally elastic and rigid spherical molecules| 1971
- 349
-
Solution of Boltzman kinetic equation in the case of relaxation of a gas mixture| 1971
- 349
-
Method of approximation of the kinetic Boltzman equation| 1971
- 349
-
Numerical methods of solving the Boltzman equation| 1971
- 349
-
Numerical methods in the theory of rarefied gases| 1971
- 349
-
Method of direct numerical integration of Boltzman equation| 1971
- 349
-
Thermal transpiration—a continuum gasdynamics view| 1971
- 349
-
Models of rarefield gas interaction with a solid surface| 1971
- 350
-
Flow of a rarefied plasma around a body| 1971
- 350
-
Flow round an angle of a flat supersonic two-phase stream in the absence of phase transitions| 1971
- 350
-
Perturbation of the Maxwell distribution in chemically reacting gaseous mixtures| 1971
- 350
-
Kinetic examination of barodiffusion distribution of gases and isotopes| 1971
- 350
-
Some space-uniform gas movements| 1971
- 350
-
Non-stationary temperature field of double layer anisotropic outlet| 1971
- 350
-
Free-molecular flow of gas in a rectangular canal of finite dimensions| 1971
- 350
-
Flow round an angle of a flat supersonic stream of humid vapour in thermodynanic equilibrium| 1971
- 350
-
The method of characteristics for calculation of supersonic axially symmetrical streams of an imperfect gas| 1971
- 350
-
Transport phenomena in reacting gaseous mixtures| 1971
- 350
-
Investigations of vapour streams from nozzles| 1971
- 350
-
Similarity of molecular transport processes in rarefied gases| 1971
- 350
-
Solution of relaxation problems in the Boltzman equation by the method of integral iterations| 1971
- 350
-
Approximation of the general formulae for gyro and synchrotron radiation in a vacuum and isotropic plasma| 1971
- 351
-
Studies on radiative emission of ruby crystals under photon and electron excitation| 1971
- 351
-
Voids in nickel after electron irradiation| 1971
- 351
-
Molecular beam scattering from single crystal surfaces under ultrahigh vacuum conditions| 1971
- 351
-
Adsorption and desorption of atomic hydrogen on polycrystalline iron| 1971
- 351
-
Thermal desorption of carbon monoxide from metals| 1971
- 351
-
Formation of positive ions by bombardment of adsorbed gas layers on metals by keV electrons| 1971
- 351
-
Channelling patterns based on low-energy ions| 1971
- 351
-
Neon slow particle luminescence arising from bombardment of a carbon film with a fast neon ion beam| 1971
- 351
-
Backscattering of 1 MeV He+ on SiC| 1971
- 352
-
Investigation of the relationship between electronic characteristics and catalytic properties of semiconductors on irradiation| 1971
- 352
-
Photocatalytic effect on semiconductors| 1971
- 352
-
Electronic mechanisms of catalytic and chemisorption processes occuring under the action of ionizing radiation| 1971
- 352
-
Relation between the electronic and catalytic properties of semiconducting oxide catalysts| 1971
- 352
-
Adsorption luminescence on solids| 1971
- 352
-
Charge transfer and surface oxidation-reduction processes in chemisorption and catalysis| 1971
- 352
-
Influence of electron beam heating on germanium structure| 1971
- 352
-
Hydrogen activation by means of copper catalyst in carrier gas at 79°K| 1971
- 353
-
Electron phenomena in chemisorption process of free atoms and radicals on semiconducting adsorbents| 1971
- 353
-
Adsorption and catalysis under irradiation| 1971
- 353
-
The role of electronic and ionic defects in oxidation catalysis| 1971
- 353
-
Electronic processes on solid surfaces and reactivity of chemisorbed molecules| 1971
- 353
-
Different forms of chemisorption on semiconductors| 1971
- 353
-
Mechanisms of doping of nickel oxide and their relation to solid surface structure| 1971
- 353
-
Photoadsorption and photodesorption of oxygen and related photocatalysis on inorganic semiconductors| 1971
- 354
-
Atom probe FIM studies of vanadium, rhenium and a copperberyllium alloy| 1971
- 354
-
Photoadsorption processes on semiconductors and their connection with electron theory of chemisorption| 1971
- 354
-
Adsorption of carbon monoxide and dioxide on the germanium surface| 1971
- 354
-
Oxygen adsorption on thin gold films on tungsten| 1971
- 354
-
Investigation of the oxidation of epitaxial lead sulphide films by means of LEED| 1971
- 354
-
Adsorption of beryllium on tungsten| 1971
- 354
-
Interaction of slow electrons with oxygen adsorbed on the (110) face of silicon| 1971
- 354
-
Investigation of gas phase composition during the process of electrical-discharge doping| 1971
- 355
-
Rectifier effect in arc discharges at low pressure in electrode systems with hollow cold cathode. I| 1971
- 355
-
Production of a current-less plasma in the resonance radiation diffusion process in a gas mixture containing an easily ionizable component| 1971
- 355
-
Energy distribution of electrons in the positive column of helium discharge| 1971
- 355
-
Investigation of plasma parameters created by a fast electron beam in a magnetic field| 1971
- 355
-
Low-voltage arc in a caesium-argon mixture at low caesium pressures| 1971
- 355
-
Variation of planar blocking with the position of emitting atoms| 1971
- 355
-
Ion trajectory calculation in Penning discharge space| 1971
- 355
-
Investigation of the threshold of secondary-emission resonance discharge in the 2.8 GHz range| 1971
- 355
-
Dynamics of arc discharge and gas ambient in high-current rectifiers with hollow cold cathode. II| 1971
- 355
-
Excitation of ion-acoustic oscillations and their influence on transfer processes in low-temperature caesium plasma| 1971
- 355
-
Investigation of negative hydrogen ion formation in a plasma with double electric layer| 1971
- 355
-
Recombination coefficient measurement in a plasma obtained by caesium vapour illumination by ultraviolet radiation| 1971
- 356
-
Application of modern kinetic theory of decomposition of solids to the mechanism of activation of impregnated cathodes by nuclear radiation| 1971
- 356
-
Investigation of properties of silver alloy secondary emitters in receiving tubes with oxide cathodes| 1971
- 356
-
Equipment for oil-free vacuum generation with pressure-dependent process control| 1971
- 356
-
Energy distribution of exo-electrons in the dark at low temperature| 1971
- 356
-
Action of decomposing plasma on the high-voltage electrodes of ion devices| 1971
- 356
-
Utilization of silicon multiplying elements in photoelectron devices| 1971
- 356
-
Choice and utilization of optimum pumping systems for some groups of electro-vacuum devices| 1971
- 356
-
Adsorption and electron emission of yttrium films on tungsten, molybdenum, tantalum, niobium and rhenium| 1971
- 356
-
Interaction of mercury droplets with a steel electrode surface immersed in plasma| 1971
- 356
-
Investigation of ion bombardment of cathodes in amplitrons| 1971
- 356
-
Potential control in triotrons and indutrons| 1971
- 356
-
Two-photon photoelectric effect of a CsSb cathode, produced by high intensity picosecond laser pulses| 1971
- 357
-
Investigation by means of an optical method of the vapour stream flowing from an ejector nozzle into vacuum| 1971
- 357
-
Turbomolecular high-vacuum pumps and aggregates| 1971
- 357
-
Distribution of degrees of compression on stages of water vapour ejector pump| 1971
- 357
-
Investigation of gettering rate of non-evaporated porous getters| 1971
- 357
-
Pressure bursts in high-vacuum systems| 1971
- 357
-
Radial turbomolecular pump| 1971
- 357
-
Obtaining ultrahigh vacuum with the aid of a system of oil diffusion pumps| 1971
- 357
-
Helium condensation pump with pumping speed for hydrogen of 40,000 1/sec and ultimate pressure lower than 10−9 torr| 1971
- 357
-
Oil-free pumping systems| 1971
- 358
-
Ion-sorption pump-gauge| 1971
- 358
-
Cold sealing of planar glass discs to superorthicon envelopes with the aid of indium and resin gaskets| 1971
- 358
-
Utilization of viscous flow to reduce the residual pressure of adsorption pumps| 1971
- 358
-
Unification of rotary motion feedthroughs for ultrahigh vacuum evaporation systems| 1971
- 358
-
Ionization chamber of a mass-spectrometer ion source| 1971
- 358
-
Micro X-ray spectral investigation of Ti- and Ti-Ag to A-995 ceramic seals| 1971
- 358
-
Gas microvolumetric apparatus for continuous measurement and recording of small quantities of gas| 1971
- 358
-
Calculation of calibration curves for Pirani gauges| 1971
- 358
-
On the problem of enhanced hydrogen content in systems with electric-discharge pumps| 1971
- 358
-
Influence of boundary refraction in mass spectrometer analyzers on the ion trajectories| 1971
- 359
-
Right-angle mounted cold trap| 1971
- 359
-
High-reflectivity mirrors for use at 10.6 μm| 1971
- 359
-
Calculation of evaporated film thickness distribution on nonplanar surfaces for variable angle vapour incidence| 1971
- 359
-
Diffusion and permeation of He, Ne, Ar, Kr and D2 through silicon oxide thin films| 1971
- 359
-
Preparation and properties of polycrystalline CdSxTe1−x films| 1971
- 359
-
Flatness and surface roughness of some common thin film substrate materials| 1971
- 359
-
Experience with application of Meissner freezing traps in high vacuum evaporators| 1971
- 359
-
Method of measurement of the inleakage rate in unstable vacuum vessels| 1971
- 359
-
An inexpensive automatic liquid nitrogen level control system using an integrated circuit| 1971
- 359
-
Monte Carlo simulation of the nucleation of thin films| 1971
- 359
-
A simple He3-He4 dilution refrigerator| 1971
- 359
-
Atmospheric pressure leak detector| 1971
- 360
-
Film composition and evaporation behaviour of 80Ni/20Cr alloy| 1971
- 360
-
Recent developments in ion-sputtering| 1971
- 360
-
Intrinsic mechanical stress in evaporated thin films of nickelchromium alloy| 1971
- 360
-
Epitaxial growth behaviour of Ge on Si (111) surfaces| 1971
- 360
-
Preparation, semiconducting properties and some applications of thin vapour-deposited films of some II-V compounds| 1971
- 360
-
Comparison of sputtering and evaporation| 1971
- 360
-
Evaporation source with electron-bombardment heating for various applications| 1971
- 360
-
Special applications of evaporators with horizontally positioned cylindrical bell jars| 1971
- 360
-
Electron-beam vacuum evaporation| 1971
- 360
-
Induction heated evaporation source| 1971
- 360
-
Some problems of evaporation in ultrahigh vacuum| 1971
- 360
-
Some operational properties of a new high vacuum evaporation apparatus B55.2| 1971
- 361
-
Obtaining heteroepitaxial layers of Ge and Si with scanning electron beam heating| 1971
- 361
-
Subthreshold irradiation effects in silicon epitaxial films| 1971
- 361
-
Germanium epitaxy from molecular beams in vacuum| 1971
- 361
-
Space-charge limited currents in polycrystalline stilbene films| 1971
- 361
-
Optical and photoelectric parameters of TlAsS2, TlSbS2 and TlBiS2 thin films| 1971
- 361
-
Preparation and growth conditions of silicon epitaxial films in vacuum| 1971
- 361
-
Growth characteristics of autoepitaxial films of silicon and germanium using a synthetic liquid phase film| 1971
- 361
-
Obtaining p-n junctions and nonrectifying contacts on gallium arsenide by the method of auto- and heteroepitaxy| 1971
- 361
-
Simple laboratory method of manufacture of thin-film field effect triodes of cadmium sulphide| 1971
- 361
-
Epitaxy of germanium from molecular beams in vacuum| 1971
- 361
-
The influence of carbon dioxide on the growth mechanism of silicon autoepitaxial films during vacuum deposition| 1971
- 361
-
Obtaining single crystal aluminium films on mica| 1971
- 361
-
Investigation of thin tellurium films| 1971
- 361
-
Influence of condensation technique on structure and properties of metals| 1971
- 361
-
Preparation and investigation of semiconducting films| 1971
- 361
-
Deposition of a metallic coating on semiconducting substrates in vacuum| 1971
- 361
-
Complex investigation of silicon nitride films deposited on silicon by pyrolysis in vacuum| 1971
- 362
-
Heteroepitaxy of germanium from solution in melt| 1971
- 362
-
Investigation of condensate distribution of films from a large number of identical evaporators| 1971
- 362
-
Investigation of high-voltage photovoltaic and piezoelectric effects in thin CdTe films and their dependence on film structure| 1971
- 362
-
Obtaining cubic boron nitride films by reactive sputtering| 1971
- 362
-
Investigation of the mechanism of germanium heteroepitaxy on GaAs during growth from a molecular beam in vacuum| 1971
- 362
-
Problem of mechanism in Si autoepitaxy with condensation from molecular beams in vacuum| 1971
- 362
-
Anomalous photovoltaic effect in ZnS thin films| 1971
- 362
-
Deposition of autoepitaxial silicon films from molecular beams in high vacuum with controlled gas composition| 1971
- 362
-
Thin-film position-sensitive photoelements with p-Cu2O-n-CdS| 1971
- 362
-
Influence of the ambient on the photovoltaic properties of epitaxial films of cadmium telluride| 1971
- 362
-
On the nature of the photovoltaic effect in thin polycrystalline CdTe films| 1971
- 362
-
Some problems of theory and technique in the preparation of epitaxial layers| 1971
- 362
-
Photoemission from thin barium films| 1971
- 362
-
Photoemission from thin aluminium films| 1971
- 363
-
Electron transport through thin films of alkali halides| 1971
- 363
-
Influence of water on evaporated ZnSe films| 1971
- 363
-
Some aspects of design of solid state image sensors| 1971
- 363
-
Influence of interfacial tunnel exchange on dielectric losses in thin amorphous insulating films| 1971
- 363
-
Change of conductivity in amorphous selenium films by electron bombardment (10 to 100 keV)| 1971
- 363
-
Recrystallization of cadmium sulphide films| 1971
- 363
-
The anomalous photovoltage in vacuum deposited films of Ga2Te3| 1971
- 363
-
On the differential impedance of Cu2S-CdS heterojunctions| 1971
- 363
-
Properties of photo-field-effect transistors| 1971
- 363
-
Study of the conditions of filamentary monocrystal destruction in high-voltage vacuum devices under the action of a strong electric field| 1971
- 364
-
Packing density and optical properties of electron beam tube screens| 1971
- 364
-
Semi-automatic machine for vacuum treatment of vidicons with finished photolayers| 1971
- 364
-
Chamber evacuation of electron devices with glass envelope| 1971
- 364
-
Kinetics of alkaline earth carbonate conversion on different cathode cores in the evacuation of receiver tubes on semi-automatic machines| 1971
- 364
-
Microdischarges of fast micron particles| 1971
- 364
-
Time characteristics of vacuum breakdown| 1971
- 364
-
Manufacturing technique for resonance lamps and absorption cells with optical pumping by He4 and He3 atoms| 1971
- 364
-
Attaining ultrahigh vacuum in sealed vacuum tubes by means of oil-free pumps with low pumping speed| 1971
- 364
-
Method of determining the evaporation from active layers on the electrodes of electro-vacuum devices| 1971
- 364
-
Vibrational noise of vacuum tubes under a complex form of acceleration| 1971
- 364
-
On reliability tests of long-life and reliable receiving tubes| 1971
- 365
-
The stem-less evacuation speed for electro-vacuum devices| 1971
- 365
-
Maintaining vacuum in devices with metal-ceramic envelope| 1971
- 365
-
Construction of vacuum chamber and resonance system of synchrocyclotron FTI AN SSSR.| 1971
- 365
-
Application of mixed evacuation schemes in oxide cathode processing| 1971
- 365
-
Arrangement for cataphoretic coating of wires with oxide| 1971
- 365
-
Plasma acceleration by means of an external magnetic field| 1971
- 365
-
Injector of fast hydrogen atoms. I. Magneto-optical system of injector| 1971
- 365
-
Utilization of magnetic-discharge pumps, type NORD, for evacuation of ultrahigh frequency devices| 1971
- 365
-
Some groups in the modernized vacuum system of the stellarator Uragan| 1971
- 365
-
Applications of vacuum techniques in nuclear technology| 1971
- 365
-
Some aspects of 2-metre liquid hydrogen bubble chamber construction| 1971
- 365
-
Vacuum system of stellarator Uragan| 1971
- 366
-
Electron beam investigations under ultrahigh vacuum conditions| 1971
- 366
-
The determination of surface structure by LEED—problems and prospects| 1971
- 366
-
Investigation of optical non-uniformities in molecular beams| 1971
- 366
-
Ionic conductivity of solid solutions of KI-KBr with Sr2+ impurity| 1971
- 366
-
A simple, continuously pumped field-ion microscope| 1971
- 366
-
Dissociation of metal oxides on surface bombardment by slow electrons| 1971
- 366
-
Simultaneous influence of donor and acceptor impurities no the thermoelectric properties of CdSb| 1971
- 366
-
Scattering chamber for physical investigations with electron beam| 1971
- 366
-
Micro-doping of silicon with the aid of electron beam heating| 1971
- 366
-
Changes in the energy spectrum of trapping centres in crystals of cadmium sulphide subjected to electron bombardment| 1971
- 366
-
Effect of pressure on electrical resistance of powder semi-conductors| 1971
- 366
-
State-of-the-art and applications of freeze-drying techniques| 1971
- 366
-
Electrical resistance of lanthanum and cerium| 1971
- 367
-
Some properties of tellurium tetrachloride in the liquid and vapour states| 1971
- 368
-
Author index of abstracts| 1971