Vacuum
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Table of contents
- 489
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Helium cryopumping for fusion applications| 1989
- 489
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Theoretical studies of the modern turbomolecular pump| 1989
- 489
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Performance of the SRS vacuum system| 1989
- 489
-
A new hybrid molecular pump with large throughput| 1989
- 489
-
Performance of the titanium sublimation trap in relatively poor vacuum systems| 1989
- 490
-
Glow discharge techniques for conditioning high-vacuum systems| 1989
- 490
-
The influence of N2, partial pressure and substrate bias on electron density and temperature in a dc sputtering diode| 1989
- 490
-
Leak detection on the DIII-D tokamak using helium entrainment techniques| 1989
- 490
-
Thin-film thermocouple gauge| 1989
- 490
-
A lidar system for measuring atmospheric pressure and temperature profiles| 1989
- 490
-
A flowmeter to determine complex volumes and small volumes of glass tubes used in vacuum gauge calibrations| 1989
- 490
-
Automatic measurement of high pressures| 1989
- 490
-
Measurement of charge-to-mass ratio (Q/m) distribution of an ionized cluster beam by a special type of quadrupole mass analyzer| 1989
- 490
-
Vacuum vessel heating system for the advanced toroidal facility| 1989
- 491
-
Very high-vacuum heat treatment facility| 1989
- 491
-
Novel high-pressure isolation cell capable of reaching 120 atm mounted in an ultrahigh-vacuum chamber| 1989
- 491
-
Scrubbing characteristics of CCl4 and C2F6 with a titanium sublimation trap| 1989
- 491
-
Chemical cleaning of metal surfaces in vacuum systems by exposure to reactive gases| 1989
- 491
-
Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime| 1989
- 491
-
American vacuum society recommended practices for pumping hazardous gases| 1989
- 491
-
Gases released by surface flashover of insulators| 1989
- 491
-
Channel electron multiplier compatibility with Viton and Apiezon-L vacuum grease| 1989
- 491
-
Adsorption and reaction of oxygen on Cu(110) in O2/H2 and O2/CO gas mixtures| 1989
- 491
-
Calculation of desorption energy distribution applied to temperature programmed H2O desorption from silicate glass surface| 1989
- 492
-
Control of ion bombardment energy in the low-temperature deposition of highly transparent and conducting In2O3 and ZnO thin films by activated reactive evaporation| 1989
- 492
-
Repeated deposition studies of the occurrence of large scale coalescence effect of electric field on the ageing of island silver films| 1989
- 492
-
Fabrication of ultrathin unsupported foils| 1989
- 492
-
The initial nucleation and growth of gold on sodium chloride for substrate temperatures between 123 and 448 K| 1989
- 492
-
Correlation of process and system parameters with structure and properties of physically vapour-deposited hard coatings| 1989
- 492
-
Films of rare earth oxides formed by electron beam evaporation| 1989
- 492
-
Effects of oxygen partial pressure on the properties of reactively evaporated thin films of indium oxide| 1989
- 492
-
Preparation and characterization of some tin oxide films| 1989
- 492
-
Growth and characterization of indium telluride thin films| 1989
- 493
-
Deposition of SixC1−x: films by reactive r.f. sputtering| 1989
- 493
-
Synthesis and properties of thin film polymorphs of molybdenum trioxide| 1989
- 493
-
Measurements of vapour stream density with the electron emission method| 1989
- 493
-
Columnar structure of obliquely deposited iron films prepared at low substrate temperatures| 1989
- 493
-
Diffusion in InP using evaporated Zn3P2 film with transient annealing| 1989
- 493
-
The influence of substrate temperature on the optical properties of ion-assisted reactively evaporated vanadium oxide thin films| 1989
- 493
-
Characterization of phosphate crystal nucleation and growth on coldrolled steel| 1989
- 493
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Instrinsic stress and structural properties of mixed composition thin films| 1989
- 493
-
Optical response of switching SmS in thin films prepared by reactive evaporation| 1989
- 494
-
Fundamental aspects of the electronic structure, materials properties and lubrication performance of sputtered MoS2 films| 1989
- 494
-
A comparison of tungsten film deposition techniques for very large scale integration technology| 1989
- 494
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Relationship between substrate bias and microstructure in magnetron-sputtered AlCu films| 1989
- 494
-
IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputtering| 1989
- 494
-
A statistical study of the combined effects of substrate temperature, bias, annealing and a Cr3Si2 undercoating on the tribological properties r.f. sputtered MoS2 coatings| 1989
- 494
-
Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition| 1989
- 494
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A measurement of the distribution of argon in sputter-deposited very large scale integration metallization| 1989
- 495
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Planarization of aluminum alloy film during high rate sputtering| 1989
- 495
-
WNx: Properties and applications| 1989
- 495
-
Effects of substrate bias on the resistivity and microstructure of molybdenum and molybdenum silicide films| 1989
- 495
-
Characterization of r.f. sputtered zirconia coatings| 1989
- 495
-
Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuits| 1989
- 495
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The effects of processing parameters on the microstructure and properties of sputter-deposited TiW thin film diffusion barriers| 1989
- 495
-
Rf oscillations in dc planar sputtering magnetrons| 1989
- 495
-
Hard molybdenum coatings prepared by cathodic magnetron sputtering| 1989
- 496
-
Influence of the pumping speed on the hysteresis effect in the reactive sputtering of thin films| 1989
- 496
-
An optimized in situ argon sputter cleaning process for device quality low-temperature (T ⩽ 800°C) epitaxial silicon: bipolar transistor and pn junction characterization| 1989
- 496
-
The bombarding-angle dependence of sputtering yields under various surface conditions| 1989
- 496
-
Performance of a planar magnetron sputtering apparatus with complex targets| 1989
- 496
-
Incorporation of argon in titanium silicon multilayer structures during sputter deposition| 1989
- 496
-
Sputtering yield and radiation damage by neutral beam bombardment| 1989
- 496
-
In situ ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H| 1989
- 497
-
Preparation and properties of the dc reactively sputtered tungsten oxide films| 1989
- 497
-
Glow discharge characteriztics when magnetron sputtering copper in different plasma atmospheres operated at low input power| 1989
- 497
-
A quasi-direct-current sputtering technique for the deposition of dielectrics at enhanced rates| 1989
- 497
-
Characterization of MoSe2 thin films| 1989
- 497
-
Energy flux onto an RF magnetron surface| 1989
- 497
-
Predicting thin-film stoichiometry in reactive sputtering| 1989
- 497
-
Angular distributions of sputtered atoms from ion-bombarded surfaces| 1989
- 497
-
The preparation and characterization of titanium boride films| 1989
- 498
-
Anomalous deposition rate dependence of hydrogenated amorphous silicon on substrate temperature| 1989
- 498
-
Resistivity changes and phase evolution in W-N films deposited in NeN2 and ArN2 discharges| 1989
- 498
-
The tribological properties of MoS2 coatings in vacuum, low relative humidity, and high relative humidity environments| 1989
- 498
-
Fabrication and structure of Mo/Ta superlattices| 1989
- 498
-
Influence of surface roughness on electron emission and sputtering in charged beam-surface interactions| 1989
- 498
-
Radial current distribution at a planar magnetron cathode| 1989
- 498
-
Selectively thermalized sputtering for the deposition of magnetic films with special anisotropies| 1989
- 498
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Electrochromic properties of sputtered nickel-oxide films| 1989
- 499
-
Structure, internal stresses, adhesion and wear resistance of sputtered alumina coatings| 1989
- 499
-
Wear resistance of metastable NiB alloys produced by chemical vapor deposition| 1989
- 499
-
Properties and performance of chemical vapour-deposited TiC-coated ball-bearing components| 1989
- 499
-
Dc and rf magnetron sputter deposition of NbN films with simultaneous control of the nitrogen consumption| 1989
- 499
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High temperature microhardness of hard coatings produced by physical and chemical vapor deposition| 1989
- 499
-
Young's modulus of TiN, TiC, ZrN and HfN| 1989
- 499
-
Reactive synthesis of well-oriented zinc-oxide films by means of the facing targets sputtering method| 1989
- 499
-
A study of crack initiation and propagation in Ni Cr thermally sprayed coatings using acoustic emission techniques| 1989
- 499
-
Adhesion and structure of TiN arc coatings| 1989
- 500
-
Evaluation of adhesion strength of thin hard coatings| 1989
- 500
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Failure mode analysis of coated tools| 1989
- 500
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The influence of the TiN deposition temperature on the critical load and hardness of hardened steels| 1989
- 500
-
The interrelationship between internal stress, processing parameters and microstructure of physically vapour deposited and thermally sprayed coatings| 1989
- 500
-
Adhesion measurements of chemically vapor deposited and physically vapor deposited hard coatings on WCCo substrates| 1989
- 500
-
Thin film characterization using a mechanical properties microprobe| 1989
- 500
-
The relationship between hardness and scratch adhesion| 1989
- 500
-
The effect of nitrogen content on the critical normal force in scratc testing of TiN films| 1989
- 501
-
The structure-mechanical property relationship of amorphous silicon monoxide thin films| 1989
- 501
-
Adhesion testing by the scratch test method: the influence of intrinsic and extrinsic parameters on the critical load| 1989
- 501
-
Plasma-processed Ag/P4Se10(80° deposited) films as a negative resist| 1989
- 501
-
Ultramicrohardness measurements of coated samples| 1989
- 501
-
Preparation of titanium nitride films by reactive ion plating and the influence of discharge current density on the film properties| 1989
- 501
-
Intrinsic stress in AIN prepared by dual-ion-beam sputtering| 1989
- 501
-
Adhesion of physically vapor-deposited titanium coatings to beryllium substrates| 1989
- 501
-
The mechanical properties of thin films: a review| 1989
- 502
-
Ion-assisted deposition of lanthanum fluoride thin films| 1989
- 502
-
Recent trends in LPCVD and PECVD| 1989
- 502
-
Plasma deposition of SiO2 gate insulators for a-Si thin-film transistors| 1989
- 502
-
Optical properties of spray-deposited tin oxide films| 1989
- 502
-
On the existence of point defects in physical vapor deposited films of TiN, ZrN, and HfN| 1989
- 502
-
Ion-beam-induced desorption of Arn+ ion clusters| 1989
- 502
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Sodium diffusion in plasma-deposited amorphous oxygen-doped silicon nitride (a-SiON: H films)| 1989
- 502
-
Mechanical property and structure relationships in hard coatings for cutting tools| 1989
- 502
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Contamination effects in glow discharge deposition systems| 1989
- 503
-
Deposition and characterization of ternary nitrides| 1989
- 503
-
Investigation of plasma-grown planar alumina films for use in the modeling of bulk alumina| 1989
- 503
-
Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on prefered orientation| 1989
- 503
-
TiN coatings on M2 steel produced by plasma-assisted chemical vapor deposition| 1989
- 503
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Effects of process parameters on the ionization in triode ion plating| 1989
- 503
-
TixAl1−xN films deposited plating with an arc evaporator| 1989
- 503
-
From diamond-like carbon to diamond coatings| 1989
- 503
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Structure and composition of ZrN and (Ti,Al)N coatings| 1989
- 504
-
Electron beam direct writing technology: system and process| 1989
- 504
-
Ceramic coatings produced by means of a gas tunnel-type plasma jet| 1989
- 504
-
Production of atomic or molecular nitrogen ion beams using a multicusp and a microwave ion source| 1989
- 504
-
Cathodic arc plasma deposition of TiC and TiCxN1−x| 1989
- 504
-
Preparation and properties of cubic boron nitride coatings| 1989
- 504
-
Focused ion beam technology| 1989
- 504
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Structure, properties and applications of TiN coatings produced by sputter ion plating| 1989
- 504
-
Characterization of reactive broad beam radio-frequency ion source| 1989
- 504
-
Characterization of plasma-deposited silicon nitride coating used for integrated circuit encapsulation| 1989
- 505
-
Investigation of a radial transmission line transformer for high-gradient particle accelerators| 1989
- 505
-
Deceleration ion optical system for sputtering measurements between 50 and 500 eV as function of angle of incidence| 1989
- 505
-
A study of the liquid Pr-ion source| 1989
- 505
-
Magnetic deflection analysis of supersonic metastable atom beams| 1989
- 505
-
Small multicusp H- source| 1989
- 505
-
The heavy-ion microprobe at GSI—used for single ion micro-mechanics| 1989
- 505
-
Focused MeV beam line for microanalysis at Osaka| 1989
- 505
-
Ion source for production of metastable He+ ions| 1989
- 505
-
Low-energy broad area electron beam for etching microelectronic materials| 1989
- 506
-
Enhanced elimination of implantation damage upon exceeding the solid solubility| 1989
- 506
-
A comparison between Sb and As implantation for the formation of highly conducting shallow silicon layers| 1989
- 506
-
Annealing of Sb+-ion-implanted Si| 1989
- 506
-
A model for damage release in ion-implanted silicon| 1989
- 506
-
Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon| 1989
- 506
-
Plasma source ion-implantation technique for surface modification of materials| 1989
- 506
-
Calibration of a Fenn-type nozzle beam source| 1989
- 506
-
Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted silicon| 1989
- 506
-
1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantation| 1989
- 507
-
Implant-dose mapping using infrared transmission| 1989
- 507
-
Build-up and annealing of damage produced by low-energy argon ions at Si(111) surface| 1989
- 507
-
Ion implantation in glasses and concomitant effects| 1989
- 507
-
Silicon amorphization during heavy ion implantation—Part II| 1989
- 507
-
Observation of a dose-rate dependence in the production of point defects in quartz| 1989
- 507
-
Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistors| 1989
- 507
-
Depletion of carbon in UHMW PE due to 340 keV D+ implantation| 1989
- 507
-
Residual defects in silicon after As+ ion implantation at self-annealing regimes| 1989
- 507
-
Transient enhanced diffusion of ion-implanted boron in Si during rapid thermal annealing| 1989
- 508
-
Phosphorus-divacanct complexes in irradiated silicon| 1989
- 508
-
Range calculations at high ion energy—Part I| 1989
- 508
-
Damage calculations at high ion energy—Part II| 1989
- 508
-
Low temperature annealing of He+ implanted optical waveguides in LiNbO3| 1989
- 508
-
The model of nucleation of vacancy clusters in the cascade range in the stage of the thermal spike| 1989
- 508
-
Electrical properties of Be+ ion-implanted Alx Ga1−xAs p-n junctions| 1989
- 508
-
Si-ion implantation in GaAs and AlxGa1−xAs| 1989
- 508
-
Planar optical waveguides fabricated in LiNbO3 by multiple He+ implantations| 1989
- 508
-
The influence of electric field on the formation of radiation damage in silicon| 1989
- 508
-
Universal relations between range and damage profile parameters| 1989
- 509
-
Implanted boron depth profiles in the AZ111 photoresist| 1989
- 509
-
Spherical targets impinged by intense ion beams| 1989
- 509
-
Chemical modifications in irradiated polymers| 1989
- 509
-
Generation of divacancies in silicon irradiated by 2-MeV electrons: depth and dose dependence| 1989
- 509
-
Field microscopy of 180–230 keV Xe+ ion damage in tungsten| 1989
- 509
-
The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon| 1989
- 509
-
Reverse sequence of formation of titanium nitrides by nitrogen implantation| 1989
- 509
-
Behaviour of implanted helium in boron carbide in the temperature range 750 to 1720°C| 1989
- 510
-
Magnetoreflectivity study of excitons in molecular-beam epitaxially grown Zn1−xFexSe crystals| 1989
- 510
-
Subharmonic responses of ion-implanted arrays reflecting magnetostatic forward volume waves| 1989
- 510
-
Radiation damage and annealing in graphite implanted with H2+ and Mo+| 1989
- 510
-
Silicon epitaxial growth for advanced device structures| 1989
- 510
-
GaAs on Si technology| 1989
- 510
-
Phase stability of CuNiFe alloys under ion irradiation| 1989
- 510
-
Gallium arsenide on silicon: a review| 1989
- 510
-
Microstructural change of Al on H implantation| 1989
- 510
-
SEM and EMPA analysis of impurities related to GaAs substrates and MBE grown GaAs layers| 1989
- 511
-
Growth of GaAs, AlGaAs, and InGaAs on (111) B GaAs by molecular-beam epitaxy| 1989
- 511
-
Vacuum annealing studies of thin TiC layers on steels| 1989
- 511
-
New achievements in Hg1−xCdxTe grown by molecular-beam epitaxy| 1989
- 511
-
Molecular-beam and deposition of high-Tc superconductors| 1989
- 511
-
Study of molecular-beam epitaxy GaAs1−xSbx (x < 0.76) grown on GaAs (100)| 1989
- 511
-
Molecular-beam epitaxial growth mechanisms on the GaAs(100) surface| 1989
- 511
-
Molecular-beam epitaxial growth and exciton lifetime studies of lattice-matched and coherently strained quantum wells| 1989
- 512
-
Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrate| 1989
- 512
-
Epitaxial growth of LiNbO3LiTaO3 thin films on Al2O3| 1989
- 512
-
Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs| 1989
- 512
-
Antimony passivation of molecular-beam epitaxially grown GaAs surfaces| 1989
- 512
-
Ion bombardment effect on Si homoepitaxial growth from ion molecular beams| 1989
- 512
-
Growth of thin-film niobium and niobium oxide layers by molecular-beam epitaxy| 1989
- 512
-
Diffusion of B and As from polycrystalline silicon during rapid optical annealing| 1989
- 512
-
Chemically bonded diamondlike films from ion-beam deposition| 1989
- 512
-
Dose rate dependence and time constant of the ion-beam-induced crystallization mechanism in silicon| 1989
- 513
-
Raman spectra of AlxIn1−xAs grown molecular-beam epitaxy| 1989
- 513
-
Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy| 1989
- 513
-
Abrasive wear resistance of ion-deposited hard-carbon films as a function of deposition energy| 1989
- 513
-
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750°C) epitaxial deposition. II. Epitaxial quality| 1989
- 513
-
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750°C) epitaxial silicon deposition. I. Process considerations| 1989
- 513
-
Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy| 1989
- 513
-
Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy| 1989
- 513
-
Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy| 1989
- 513
-
Analysis of molecular-beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling| 1989
- 514
-
Structural characterization of GaAs/ZnSe interfaces| 1989
- 514
-
Pt4Si9 formation by hot substrate ion beam mixing| 1989
- 514
-
Ion beam mixing effects in Ag precipitates embedded in MgO crystals| 1989
- 514
-
Studies of Co/Ga1−xAlx interfaces fabricated in ultrahigh vacuum| 1989
- 514
-
Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I. Ti on Si| 1989
- 514
-
Growth and luminescence spectroscopy of a CuCl quantum well structure| 1989
- 514
-
Thermal behavior and range distribution of 209Bi implanted into the AI/V bilayer structure| 1989
- 514
-
Rapid thermal annealing of InP using GaAs and InP proximity caps| 1989
- 514
-
Ion beam mixing of metal-sapphire interfaces| 1989
- 515
-
Investigation of thin-film Ni/single-crystal SiC interface reaction| 1989
- 515
-
Oxygen behavior during titanium silicide formation by rapid thermal annealing| 1989
- 515
-
Composition, microstructure, and properties of crystalline molybdenum silicide thin films produced by annealing of amorphous Mo/Si multilayers| 1989
- 515
-
Crystallization of amorphous silicon during thin-film gold reaction| 1989
- 515
-
A correlation between the enthalpy of mixing and the internal strain energy in the III–V alloy semiconductor system| 1989
- 515
-
Orientation control of the silicon film on insulator by laser recrystallization| 1989
- 515
-
Growth and structure aluminum films on (001) silicon carbide| 1989
- 515
-
The microstructure and electrical properties of contacts formed in the Ni/Al/Si system due to rapid processing| 1989
- 516
-
Stresses in sputtered TiSi multilayers and polycrystalline silicide films| 1989
- 516
-
Advanced layer material constitution| 1989
- 516
-
Interfacial reactions in bimetallic AgSn thin film couples| 1989
- 516
-
Wafer back metallization for semiconductor packaging| 1989
- 516
-
Metastable phases and thermodynamic equilibrium| 1989
- 516
-
Optical properties of the thermal oxide-GaAs rough interface| 1989
- 516
-
The intercalation and exfoliation of tungsten disulfide| 1989
- 516
-
Transport in refractory metals and their interaction with SiO2: coparison of tungsten and molybdenum| 1989
- 517
-
Interfacial reactions of platinum thin films on (111) and (001) germanium| 1989
- 517
-
Silicon-silicon dioxide interface: an infrared study| 1989
- 517
-
Formation of PtSi in the presence of W and Al| 1989
- 517
-
RH4Si5 formation in the multilayer geometry: explosive reaction versus nucleation-controlled kinetics| 1989
- 517
-
Wavelength- and thickness-independent optical coatings for integrated circuit metallization layers| 1989
- 517
-
Thermal nitridation of silicon dioxide films| 1989
- 517
-
Helium microprobe analysis of nickel silicide diodes| 1989
- 517
-
Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriers| 1989
- 517
-
Thermally and ion-induced reaction between Si and binary metallic alloys| 1989
- 518
-
Diffusions of Sb, Ga, Ge, and (As) in TiSi2| 1989
- 518
-
Study of the initial aluminide phase growth in Al/Pt couples| 1989
- 518
-
Behaviour of the oxide film in MOS devices| 1989
- 518
-
A study of the oxidation of selected metal silicides| 1989
- 518
-
Silicon trench etch in a hex reactor| 1989
- 518
-
Highly selective etching of Si3N4 over SiO2 employing a downstream type reactor| 1989
- 518
-
A study of the leakage mechanisms of silicided n+/p junctions| 1989
- 518
-
Tungsten and tungsten silicide etching in halogenated plasmas| 1989
- 518
-
High-selectivity, silicon dioxide dry etching process| 1989
- 519
-
Physical characterisation of dry etching plasmas used in semiconductor fabrication| 1989
- 519
-
Lithographic properties of amorphous WO3 films exposed to photons, electrons, and hydrogen plasma| 1989
- 519
-
Radiation damage of gallium arsenide induced by reactive ion etching| 1989
- 519
-
Effect of oxygen on fluorine-based remote plasma etching of silicon and silicon dioxide| 1989
- 519
-
An RIE process for GaAs using Cl2| 1989
- 519
-
Characterization of ion beam etching induced defects in GaAs| 1989
- 519
-
Magnetically enhanced reactive ion etching of silicon in bromine plasmas| 1989
- 519
-
Pattern transfer by dry etching through stencil masks| 1989
- 519
-
Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnet| 1989
- 519
-
Laser diagnostic techniques for reactive ion etching: plasma understanding to process control| 1989
- 520
-
Further improvements in end point detection using a wide angle ion beam souce| 1989
- 520
-
Etching of tungsten with XeF2: an x-ray photoelectron spectroscopy study| 1989
- 520
-
Progress in deep-etch synchrotron radiation lithography| 1989
- 520
-
The physical basis for numerical fluid simulations in laser fusion| 1989
- 520
-
A Schottky barrier study of beam incidence in argon ion beam etching| 1989
- 520
-
Operational limits and confinement in JET| 1989
- 520
-
Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He| 1989
- 520
-
The status of fusion research| 1989
- 520
-
Invariance principles and plasma confinement| 1989
- 521
-
Observation of laser-induced collisional energy transfer in xenon-argon mixtures| 1989
- 521
-
Effect of object potentials on the wake of a flowing plasma| 1989
- 521
-
Imaging of tritium implanted into graphite| 1989
- 521
-
Heating and confinement of a stellarator plasma—a review of theory and experiments (1980–1985)| 1989
- 521
-
Wall ion current in high-current vacuum arcs| 1989
- 521
-
Design and performance of a high repetition rate TEA CO2 laser| 1989
- 521
-
Collision-induced absorption in the fundamental band of nitrogen gas| 1989
- 521
-
Ultraviolet copper-ion laser with enhanced operation period due to UHV technology| 1989
- 522
-
Asymmetric double Langmuir probe: small signal application| 1989
- 522
-
Electron beam time-of-flight plasma potential diagnostic| 1989
- 522
-
The Giotto implanted ion spectrometer (IIS): principles of the electronic operation and data collection| 1989
- 522
-
Variational and transport properties of high-pressure arc plasmas| 1989
- 522
-
Mass-sensitive ion energy analyzer for multispecies plasmas| 1989
- 522
-
Thomson parabola ion energy analyzer with a coincident and jitterfree applied electric field ramp| 1989
- 522
-
Interpretation of Langmuir, heat-flux, deposition, trapping and gridded energy analyser probe data for impure plasmas| 1989
- 522
-
Molecular beam stabilized CO2 laser| 1989
- 522
-
Ionization-drift turbulence in rf magnetron plasmas| 1989
- 523
-
Measurement of channeling radiation using a 45 MeV betatron| 1989
- 523
-
Remarks on channeling radiation| 1989
- 523
-
Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channeling| 1989
- 523
-
Lattice sites of Yb in Si-A planar channeling study| 1989
- 523
-
Dechanneling at an interface of finite width| 1989
- 523
-
Nuclear reaction analysis of shallow B and BF2 implants in Si| 1989
- 523
-
Interatomic potential in solids and its applications to range calculations| 1989
- 523
-
A theory of interaction between fast ions and solids| 1989
- 523
-
The effects of surface topography in nuclear microprobe Rutherford backscattering analysis| 1989
- 523
-
Basic mechanisms for the lattice-site occupation of metallic elements implanted into aluminium| 1989
- 524
-
Secondary ion mass spectrometry depth profiling of Mo/SiO2/Si structural samples| 1989
- 524
-
Titanium gettering in silicon: investigation by deep level transient spectroscopy and secondary ion mass spectroscopy| 1989
- 524
-
Lattice vacancies in TiN and HfN films: a study by positron annihilation| 1989
- 524
-
Mass spectometry during molecular-beam epitaxy: an alternative to reflection high-energy electron diffraction| 1989
- 524
-
Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling| 1989
- 524
-
A novel mass-spectrometric sampling technique for lifetime studies of gas lasers| 1989
- 524
-
Mass analyzed secondary ion microscopy| 1989
- 524
-
Background reduction for heavy element accelerator mass spectrometry| 1989
- 525
-
Auger electron spectroscopy and Rutherford backscattering spectroscopy studies of TiN and TiC coatings prepared by the activated reactive evaporation process| 1989
- 525
-
Monte Carlo investigations of the ion microprobe| 1989
- 525
-
Elastic scattering and charge exchange in He+ ion scattering from alkali metal overlayers| 1989
- 525
-
LEED method to study surface atom vibrations| 1989
- 525
-
Raman scattering as a technique of measuring film thickness: interference effects in thin growing films| 1989
- 525
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Three-dimensional computer simulation of ion beam scattering by an electrostatic reflector| 1989
- 525
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Reflection high-energy electron diffraction oscillations during growth of metallic overlayers on ideal and nonideal metallic substrates| 1989
- 525
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Electron spin resonance investigation of ion beam modified amorphous hydrogenated (diamondlike) carbon| 1989
- 525
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The interface formation and thermal stability of Ag overlayers grown on cubic SiC(100)| 1989
- 525
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An efficient algorithm for the simulation of hyperthermal energy ion scattering| 1989
- 525
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A simulation of keV electron scatterings in a charged-up specimen| 1989
- 526
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Reliable and versatile scanning tunneling microscope| 1989
- 526
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Transmission electron microscopy of gold-silicon interactions on the backside of silicon wafers| 1989
- 526
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Atomic force microscopy and scanning tunneling microscopy with a combination atomic force microscope/scanning tunneling microscope| 1989
- 526
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Surface and interface characterization of heat-treated (Ti,Al)N coatings on high speed steel substrates| 1989
- 526
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Electron microscopy of electron damage in tantalum carbide| 1989
- 526
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Electronic device for the analysis of electron diffraction patterns| 1989
- 526
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The surface topography of pyrolitic carbons and of gold thin films by scanning tunneling microscopy:grain boundaries and surface defects| 1989
- 526
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Simple line-sampling apparatus for line frequency stroboscopic observation of periodic phenomena using scanning electron microscopy| 1989
- 526
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Scanning tunneling microscope for low temperature, high magnetic field, and spatially resolved spectroscopy| 1989
- 527
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Low energy electron diffraction analysis of the Si(111)7x7 structure| 1989
- 527
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Crystal growth of Ge studied by reflection high-energy electron diffraction and photoemission| 1989
- 527
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Theory of the local tunneling spectrum of a variating adsorbate| 1989
- 527
-
Detection of atomic surface structure on NbSe2 and NbSe3, at 77 and 4.2 K using scanning tunneling microscopy| 1989
- 527
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Transmission electron microscopy for the determination of the microstructure of thin films and interfaces| 1989
- 527
-
Scanning tunneling microscopy of cubic silicon carbide surfaces| 1989
- 527
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Cross-sectional transmission electron microscopy chracterization of the interface between plasma-sprayed TiC and Inconel| 1989
- 527
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Imaging and characterization of film coating using scanning acoustic microscopy| 1989
- 527
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Theory of scanning tunneling spectroscopy| 1989
- 527
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Studies of superconductors using a low-temperature, high-field scanning tunneling microscope| 1989
- 528
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Structural investigation of helium ion-beam-irradiated glassy carbon| 1989
- 528
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Scanning low energy electron loss microscopy (SLEELM): metals on semiconductors| 1989
- 528
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Transmission electron microscopy of elastic relaxation effects in Si-Ge strained layer superlattice structures| 1989
- 528
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Transmission electron microscopy studies of brown and golden titanium nitride thin films as diffusion barriers in very large scale integrated circuits| 1989
- 528
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energy-loss image formation in scanning transmission ion microscopy| 1989
- 528
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Defining the fractal nature of thin-film top surfaces from microdensitometer analysis of electron micrographs of surface replicas| 1989
- 528
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Microstructure of Fe implanted yttria stabilized zirconia studied by Mössbauer spectroscopy and TEM| 1989
- 528
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Fracture testing of silicon microelements in situ in a scanning electron microscope| 1989
- 529
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Characterization of microcrystallinity in hydrogenated silicon thin films| 1989
- 529
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Multilayer PIXE analysis| 1989
- 529
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Characterization of epitaxial films by grazing-incidence X-ray diffraction| 1989
- 529
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Electron stimulated desorption from GaAs(100) surface| 1989
- 529
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An electron spectroscopy study of the growth and thermally activated diffusion of nickel thin films on Al(111) and Al2O3/Al(111)| 1989
- 529
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Large grain size CdTe films grown on glass substrates| 1989
- 529
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Ultrahigh-vacuum system for surface studies using high-energy ion scattering and X-ray photoemission spectroscopy| 1989
- 529
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Experimental comparison of micro-PIXE with other methods utilized for biomineralization studies| 1989