Vacuum
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 299
-
Outgassing of vacuum materials—IElsey, RJ et al. | 1975
- 307
-
Electrically renewable and controllable oxygen getterFouletier, J / Kleitz, M et al. | 1975
- 315
-
The solid state diffusion pumpCarter, G / Armour, DG / Funuki, UZ et al. | 1975
- 323
-
Modified vacuum capacitorRamachandran, S / Raut, VP et al. | 1975
- 325
-
Electrical conduction in thin metal filmsHolland, L et al. | 1975
- 326
-
Vacuum news| 1975
- 335
-
Secondary ion emission from metal under medium energy positive ion bombardment| 1975
- 335
-
Thermodiffusion relation in a mixture of caesium vapour with helium| 1975
- 335
-
Emission of plasma and transition radiation by traversal of alpha particles through solids| 1975
- 335
-
Study of the relaxation of metastable atoms of He and Ar on pyrex walls| 1975
- 335
-
Glow discharge influence on the rate coefficients of the N-atoms heterogeneous recombination| 1975
- 335
-
Cathode sputtering in pulse mode| 1975
- 335
-
On some integral relations in the kinetic theory of gases| 1975
- 335
-
The effect of ion bombardment on the interface states in MOS structures| 1975
- 335
-
The diffusion coefficient of metastable mercury atoms in argon| 1975
- 335
-
Experimental evidence of different emission modes on mercury film cathodes of pulsed high current arcs| 1975
- 335
-
On the theory of thermomagnetic effect in Knudsen gas| 1975
- 335
-
Emission of plasma radiation from thin silver film by the impact of high energy protons| 1975
- 336
-
Interaction of a gas discharge with an oxide cathode| 1975
- 336
-
Erosion and ionization in the cathode spot regions of vacuum arcs| 1975
- 336
-
Electrode material effect on vacuum arc movement in transverse magnetic fields| 1975
- 336
-
Interaction of plasma with a dielectric surface| 1975
- 336
-
Influence of ion temperature on the wall floating potential in collisionless electrical sheat| 1975
- 336
-
Numerical simulation of transient Joule heating of a Cathode protrusion by field emission| 1975
- 336
-
The influence of an ion wall current on the transmittance of a glass wall| 1975
- 336
-
Velocity distribution of ion flux from the cathode of a steady-state low-pressure mercury arc| 1975
- 336
-
On the formation and acceleration mechanisms of the arc cathode spot plasma jet| 1975
- 336
-
Effect of target structure on the energy distribution of secondary ion-electron emission| 1975
- 336
-
Identity of positive ions from break arcs| 1975
- 336
-
The expansion phase of the high current vacuum arc| 1975
- 336
-
Vacuum arcs subjected to axial magnetic fields| 1975
- 337
-
Ion diagnostics with rf probes in a warm magnetroplasma| 1975
- 337
-
Residual gas kinetics and water vapour chemisorption in a metal ion-getter pumped system| 1975
- 337
-
Negative-ion/molecule reactions in sulphur hexafluoride| 1975
- 337
-
Electrical conductance and radiation of argon plasma containing condensing natural coal ash| 1975
- 337
-
Orifice probe for plasma diagnostics: IV. Ion density determination| 1975
- 337
-
Nonlinear interference of ionization waves| 1975
- 337
-
Interactions of ions derived from break arcs with respect to contact activation| 1975
- 337
-
Output characteristics of the HeZn laser| 1975
- 337
-
Determination of transition probabilities through stimulated emission in rare gas ions| 1975
- 337
-
The application of Langmuir probes to the study of flowing after-glow plasmas| 1975
- 337
-
Application of controlled cathodic sputtering to a helium-cadmium laser| 1975
- 338
-
On calculation of efficiency of scattering of unstable charged particles in quadrupole mass spectrometers| 1975
- 338
-
Dynamic method of calibrating low-pressure manometers| 1975
- 338
-
An electric-discharge vacuum pump| 1975
- 338
-
Reliability of a capacitance manometer in the range 2 × 10−4–5 × 10−6 torr| 1975
- 338
-
On the influence of form of applied voltage on operation of quadrupole mass spectrometers| 1975
- 338
-
A two-rotor geared vacuum pump| 1975
- 338
-
A cryogenic sorption pump. (USSR)| 1975
- 338
-
Oil contamination with the SEM operated in the spot scanning mode| 1975
- 338
-
A sorption vacuum pump| 1975
- 338
-
An ionization manometer| 1975
- 339
-
Rotational Raman interferometric technique to measure gas temperatures| 1975
- 339
-
The origin of internal stress in low-voltage sputtered tungsten films| 1975
- 339
-
A vacuum trap| 1975
- 339
-
A series of very high-vacuum valves with electric heaters for nominal apertures of 10, 20, 30, 50, 100, 150 and 200 nm| 1975
- 339
-
Field effect conductance modulation in vacuum-evaporated amorphous silicon films| 1975
- 339
-
Study of electrode products emitted by vacuum arcs in form of molten metal particles| 1975
- 339
-
Safety device for a rough vacuum line| 1975
- 339
-
On some analytical characteristics of three-dimensional quadrupole mass spectrometer| 1975
- 339
-
Multiposition machine for carrying out high-temperature tests on various materials in vacuo| 1975
- 340
-
Detection of low-mass impurities in thin films using MeV heavy-ion elastic scattering and coincidence detection techniques| 1975
- 340
-
Apparatus for depositing coatings in vacuo| 1975
- 340
-
The influence of metallic electrodes on characteristics of MIM structure| 1975
- 340
-
Apparatus for monitoring film thickness in the course of vacuum deposition| 1975
- 340
-
Electron-microscopical investigation of crystallization of evaporated selenium films| 1975
- 340
-
Some electric and photoelectric properties of TlIn(S2 Se2| 1975
- 340
-
Device for depositing coatings in vacuo| 1975
- 340
-
Effect of Au nucleation centres and deposition rate on crystallinity and electronic properties of evaporated Te films| 1975
- 340
-
Investigation of surface states in the silicon-sluminum fluoride interface| 1975
- 340
-
Crystallization kinetics of amorphous selenium condensates| 1975
- 340
-
Apparatus for the deposition of coatings in vacuo| 1975
- 341
-
The nature of oxide sublayer between film and substrate at chromium deposition in vacuum| 1975
- 341
-
Utilization of the method of electron-microscopital moirré rotation for investigation of substructure of thin metallic films| 1975
- 341
-
On P, As and Al transport from silicon sources into films prepared by sublimation in vacuum| 1975
- 341
-
Insulation of film surface thermocouples| 1975
- 341
-
The influence of surface roughness on spin wave resonances in thin permalloy films| 1975
- 341
-
Measurement of thickness and conductivity of a thin film during the process of its evaporation| 1975
- 341
-
To the technology of preparation of superconducting niobium films| 1975
- 341
-
On fabrication and examination of single crystal insulating substrates for microelectronics| 1975
- 341
-
On structure of Cu2Se thin films| 1975
- 341
-
Selenium thin-film transistorsh with insulated gate| 1975
- 341
-
Some features of preparation of tin films| 1975
- 341
-
Growth and structure of condensed films of BaTiO3 and LiNbO3| 1975
- 341
-
Stacking fault structures in carbon-contaminated low-temperature epitaxial silicon| 1975
- 342
-
Investigation of radiation action on properties of Si and Ge films with anomalously high photo-voltage| 1975
- 342
-
Mass-spectrometric investigation of conditions of formation of amorphous films of semiconductors at condensation from vapour phase| 1975
- 342
-
Complex electron scattering effects in Cu2Se thin films| 1975
- 342
-
Investigation of deformation of surface of Se and Ge films by the method of proton backscattering| 1975
- 342
-
On formation of structure of films of some semiconductors at laser evaporation| 1975
- 342
-
Investigation of conditions of preparation of oriented films of alpha-Ag2Se| 1975
- 342
-
Conductivity of GaAs thin films obtained by sputtering| 1975
- 342
-
Formation of SiO2 films in oxygen flow with gaseous HCI impurity| 1975
- 342
-
A contactless method for measurement of the coefficient of heat transfer of thin films| 1975
- 342
-
Electric and photoelectric properties of Pb3O4 minium films| 1975
- 342
-
The influence of physico-technological conditions or preparation of thin films of TiaTe system phases in the region of less than 50 at % Te| 1975
- 342
-
Apparatus and methods for investigation of the process of vacuum evaporation and condensation| 1975
- 342
-
The amorphous structure of the GeSe system| 1975
- 343
-
On the influence of pre-pulse on the value of current drawn from a cathode of vacuum diode operated in the mode of explosive emission| 1975
- 343
-
Anode spot temperatures in vacuum arcs| 1975
- 343
-
One-sided ultrahigh-frequency nonresonance multipactor discharge| 1975
- 343
-
A simple locator for high energy beams| 1975
- 343
-
The theory of the production of intense ions beams in the relativistic diode| 1975
- 343
-
Investigation of the pre-ignition characteristics of a Knudsen diode with hot cathode| 1975
- 343
-
The modification of the refractive index of fluorite by heavy ion bombardment| 1975
- 343
-
On removing graphite dust from (electrical) parts| 1975
- 343
-
Experimental investigation of ion bombardment of cathodes in crossed electric and magnetic fields| 1975
- 343
-
Perveance and structure of electron beam in a diode with point cathode operated in the mode of explosive electron emission| 1975
- 343
-
Description and performance of a high resolution electron spectrometer| 1975
- 343
-
On volt-ampere characteristic of diodes operated in the mode of explosive electron emission| 1975
- 343
-
Pre-breakdown phenomena of a positive point to plane in air at low pressure| 1975
- 343
-
An experimental investigation of pulsed low-pressure secondary electron resonant discharge in hydrogen| 1975
- 344
-
Electrical implosion in vacuum of thin metal cylinders| 1975
- 344
-
Advances in the efficient generation of intense pulsed proton beams| 1975
- 344
-
Erratum| 1975