IEEE transactions on electron devices
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1617
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Table of Contents| 2022
- 1622
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Foreword Special Issue on Spintronics-Devices and CircuitsKaushik, Brajesh Kumar / Aggarwal, Sanjeev / Bandyopadhyay, Supriyo et al. | 2022
- 1629
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Perpendicular Anisotropy Controlled by Seed and Capping Layers of Heusler-Alloy FilmsFrost, William / Samiepour, Marjan / Hirohata, Atsufumi et al. | 2022
- 1634
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Enhanced Electronic and Magnetic Properties of N2O Gas Adsorbed Mn-Doped MoSe2 MonolayerMishra, Neha / Pandey, Bramha P. / Kumar, Brijesh et al. | 2022
- 1642
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Optimal Spin Polarization for Spin–Orbit-Torque Memory and OscillatorFu, Zhenxiao / Shukla, Amit Kumar / Mu, Zhiqiang et al. | 2022
- 1650
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Design of Reconfigurable Spin-Wave Nanochannels Based on Strain-Mediated Multiferroic Heterostructures and Logic Device ApplicationsWang, Fan / Zhu, Mingmin / Qiu, Yang et al. | 2022
- 1658
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Voltage-Controlled Energy-Efficient Domain Wall Synapses With Stochastic Distribution of Quantized Weights in the Presence of Thermal Noise and Edge RoughnessMisba, Walid Al / Kaisar, Tahmid / Bhattacharya, Dhritiman et al. | 2022
- 1667
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Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-FlopsCho, Karam / Liu, Xiangkai / Chen, Zhihong et al. | 2022
- 1677
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Novel Nonvolatile Lookup Table Design Based on Voltage-Controlled Spin Orbit Torque MemoryLiu, Xiao / Deng, Erya / Zhang, He et al. | 2022
- 1683
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A Novel Auto-Write-Stopping Circuit for SHE + STT-MTJ/CMOS Hybrid ALUBarla, Prashanth / Joshi, Vinod Kumar / Bhat, Somashekara et al. | 2022
- 1691
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A 3-Bit Flash Spin-Orbit Torque (SOT)-Analog-to-Digital Converter (ADC)Ghanatian, Hamdam / Farkhani, Hooman / Rezaeiyan, Yasser et al. | 2022
- 1698
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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS MemoryYang, Zhi / He, Kuiqing / Zhang, Zeqing et al. | 2022
- 1706
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Effects of Temperature and Structural Geometries on a Skyrmion Logic GateTang, Chunli / Alahmed, Laith / Xu, Jihao et al. | 2022
- 1713
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Ferrimagnetic Synapse Devices for Fast and Energy-Efficient On-Chip Learning on Crossbar-Array-Based Neural Networks (A Device-Circuit-System Costudy)Sahu, Upasana / Sisodia, Naven / Muduli, Pranaba Kishor et al. | 2022
- 1721
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Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural NetworkCai, Hao / Bian, Zhongjian / Fan, Zhonghua et al. | 2022
- 1727
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Spin-Orbit Torque Neuromorphic Fabrics for Low-Leakage Reconfigurable In-Memory ComputationLiu, Mingshuo / Borulkar, Payal / Hossain, Mousam et al. | 2022
- 1736
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Energy-Efficient Advanced Data Encryption System Using Spin-Based Computing-in-Memory ArchitectureNisar, Arshid / Dhull, Seema / Shreya, Sonal et al. | 2022
- 1743
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Long Short-Term Memory Implementation Exploiting Passive RRAM Crossbar ArrayNikam, Honey / Satyam, Siddharth / Sahay, Shubham et al. | 2022
- 1752
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Level Scaling and Pulse Regulating to Mitigate the Impact of the Cycle-to-Cycle Variation in Memristor-Based Edge AI SystemFu, Jingyan / Liao, Zhiheng / Wang, Jinhui et al. | 2022
- 1763
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Bipolar Static Induction Transistor With Insulated GateColalongo, Luigi / Richelli, Anna et al. | 2022
- 1769
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Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device ArchitectureLiang, Jie / Sun, Chen / Xu, Haiwen et al. | 2022
- 1776
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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL TreatmentLee, Meng-Chien / Chung, Nien-Ju / Lin, Hung-Ru et al. | 2022
- 1781
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Solution for Model Parameter Optimization and Prediction of Next-Generation Device DC CharacteristicsGil, Gwangnae / Park, Seyoung / Woo, Sola et al. | 2022
- 1786
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Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility TransistorsHarrysson Rodrigues, Isabel / Vorobiev, Andrei et al. | 2022
- 1792
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Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma TreatmentLi, Xiaobo / Lin, Feng / Wu, Junye et al. | 2022
- 1798
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Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN StructuresNela, Luca / Erine, Catherine / Zadeh, Amirmohammad Miran et al. | 2022
- 1805
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Ferroelectricity of Hf0.5Zr0.5O₂ Thin Films Free From the Influence of Electrodes by Using Al₂O₃ Capping LayersWan, Jiaxian / Chen, Xue / Ji, Liwei et al. | 2022
- 1811
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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)Huang, Wei-Chen / Chen, Po-Hsun / Chang, Ting-Chang et al. | 2022
- 1816
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Improving Machine Learning Attack Resiliency via Conductance Balancing in Memristive Strong PUFsLarimian, S. / Mahmoodi, M. R. / Strukov, D. B. et al. | 2022
- 1823
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Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around TransistorsWu, Yi-Ting / Ding, Fei / Chiang, Meng-Hsueh et al. | 2022
- 1830
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Implementation of Neuronal Intrinsic Plasticity by Oscillatory Device in Spiking Neural NetworkWu, Lindong / Wang, Zongwei / Bao, Lin et al. | 2022
- 1835
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RRAM Compact Modeling Using Physics and Machine Learning HybridizationLin, Albert S. / Liu, Po-Ning / Pratik, Sparsh et al. | 2022
- 1842
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Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic CharacteristicsPaul, A. D. / Biswas, S. / Dalal, A. et al. | 2022
- 1849
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Boolean Logic Function Realized by Phase-Change Blade Type Random Access MemoryLian, Xiaojuan / Wang, Lei et al. | 2022
- 1858
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High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser AnnealingXu, Meng / Hu, Sunjie / Peng, Cong et al. | 2022
- 1864
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Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling EffectLee, Jungwoo / Hong, Yong-Hoo / Jung, Eun Kyo et al. | 2022
- 1870
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A Differential Ring Oscillator With Tail Current Source Control Scheme Using N-Type Oxide TFTsLi, Hui / Deng, Sunbin / Xu, Yuming et al. | 2022
- 1876
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Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well StructuresXue, Gaomin / Zou, Zhixiang / Lin, Liang et al. | 2022
- 1883
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Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load InvertersLee, Jae-Yun / Tarsoly, Gergely / Shan, Fei et al. | 2022
- 1889
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An Efficient White-Light Photodetector Based on 2D-SnS2 NanosheetsYadav, Sanjeev Mani / Pandey, Amritanshu et al. | 2022
- 1894
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Ultrasensitive Self-Powered Deep-Ultraviolet Photodetector Based on In Situ Epitaxial Ga₂O₃/Bi₂Se₃ HeterojunctionZhao, Bowen / Li, Kuangkuang / Liu, Qing et al. | 2022
- 1900
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Bulk Electron Accumulation LDMOS With Extended Superjunction GateChen, Weizhong / Qin, Haifeng / Zhang, Hongsheng et al. | 2022
- 1906
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The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOSMishra, Aakanksha / Shrivastava, Mayank / Gupta, Ankur et al. | 2022
- 1912
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High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n DiodesSadek, Mansura / Han, Sang-Woo / Song, Jianan et al. | 2022
- 1918
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3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal StructureGuo, Hui / Bai, Haineng / Zhang, Zi-Hui et al. | 2022
- 1924
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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical RealizationBaker, G. W. C. / Gammon, P. M. / Renz, A. B. et al. | 2022
- 1931
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Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination ExtensionsYates, Luke / Gunning, Brendan P. / Crawford, Mary H. et al. | 2022
- 1938
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1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge TerminationLiu, Xinke / Lin, Feng / Li, Jian et al. | 2022
- 1945
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Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °CWang, Yibo / Han, Genquan / Xu, Wenhui et al. | 2022
- 1950
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Interfacial Permittivity Characterization of Heterogeneous Dielectric Bi-LayersMousavi Karimi, Zeinab / Davis, Jeffrey A. et al. | 2022
- 1956
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Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and SolutionHemanjaneyulu, Kuruva / Meersha, Adil / Kumar, Jeevesh et al. | 2022
- 1964
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Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALDXu, Renren / Yao, Jiaxin / Xu, Gaobo et al. | 2022
- 1972
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An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling OxideLin, Kuan-Wun / Chen, Kung-Chu / Hwu, Jenn-Gwo et al. | 2022
- 1979
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A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility ModelDhillon, Prabjot / Wong, Hiu Yung et al. | 2022
- 1984
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Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film TransistorsYang, Yuyang / Zhang, Meng / Lu, Lei et al. | 2022
- 1989
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Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating SubstratesTakahashi, Katsuya / Tanaka, Hajime / Kaneko, Mitsuaki et al. | 2022
- 1995
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Calculation of Minority Carriers’ Lifetime in HgCdTe Structures by Using the Method Based on Mutual Correlation Between the Concentration of Electrical ParticlesJozwikowski, K. / Jozwikowska, A. / Markowska, O. et al. | 2022
- 2002
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High Performance Flexible Transistors With Polyelectrolyte/Polymer Bilayer DielectricRahi, Sachin / Raghuwanshi, Vivek / Saxena, Pulkit et al. | 2022
- 2009
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Development of Laser-Micromachined 4H-SiC MEMS Piezoresistive Pressure Sensors for Corrosive EnvironmentsWang, Lukang / Zhao, You / Yang, Yu et al. | 2022
- 2015
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Development of Microfluidic System Enabling High-Throughput Characterization of Multiple Biophysical Parameters of Single CellsWang, Ke / Liu, Yan / Chen, Deyong et al. | 2022
- 2023
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A Resonant Differential Pressure Microsensor With Stress Isolation and Au-Au Bonding in PackagingCheng, Chao / Yao, Jiahui / Lu, Yulan et al. | 2022
- 2030
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Multilayer Microstructured High-Sensitive Ultrawide-Range Flexible Pressure Sensor With Modulus GradientLu, Xiaozhou / Meng, Xiangyu / Shi, Yaoguang et al. | 2022
- 2038
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Influence of Source/Drain Catalytic Metal and Fabrication Method on OTFT-Based Hydrogen SensorLi, Bochang / Lai, P. T. / Tang, W. M. et al. | 2022
- 2043
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Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric ReflectorMumtaz, Sohail / Uhm, Hansup / Lim, Jun Sup et al. | 2022
- 2051
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Analysis of the Dual Side-Coupled RF Cavities for the HPM Devices—An Equivalent Circuit ApproachDubey, Garima / Rao, V. Sivavenkateswara / Mahto, Manpuran et al. | 2022
- 2058
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Design of a 330-GHz Frequency-Tunable Gyrotron With a Prebunched CircuitGao, Zi-Chao / Du, Chao-Hai / Li, Fan-Hong et al. | 2022
- 2066
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Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETsKumar, Jeevesh / Meersha, Adil / Variar, Harsha B. et al. | 2022
- 2074
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Role of Nitrogen in Ferroelectricity of HfxZr1-xO2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal StructureHsieh, Dong-Ru / Lee, Chia-Chin / Chao, Tien-Sheng et al. | 2022
- 2080
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An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping ModeKuk, Song-Hyeon / Han, Seung-Min / Kim, Bong Ho et al. | 2022
- 2088
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Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and BeyondKim, Soyoun / Lee, Kitae / Kim, Sihyun et al. | 2022
- 2094
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BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight UpdateAabrar, Khandker Akif / Kirtania, Sharadindu Gopal / Liang, Fu-Xiang et al. | 2022
- 2101
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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF ApplicationsChang, Shu-Wei / Lu, Tsung-Han / Yang, Cong-Yi et al. | 2022
- 2108
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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM ArraysFrancois, T. / Coignus, J. / Makosiej, A. et al. | 2022
- 2115
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Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness ScatteringSumita, Kei / Chen, Chia-Tsong / Toprasertpong, Kasidit et al. | 2022
- 2122
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THzArabhavi, Akshay M. / Ciabattini, Filippo / Hamzeloui, Sara et al. | 2022
- 2130
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Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry EtchingHuang, Bo-Wei / Tsai, Chung-En / Liu, Yi-Chun et al. | 2022
- 2137
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A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike SortingShi, Yuhan / Ananthakrishnan, Akshay / Oh, Sangheon et al. | 2022
- 2145
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Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric MemoryXu, Yannan / Yang, Yang / Zhao, Shengjie et al. | 2022
- 2151
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TiOx/Ti/TiOx Tri-Layer Film-Based Waveguide Bolometric Detector for On-Chip Si Photonic SensorShim, Joonsup / Lim, Jinha / Geum, Dae-Myeong et al. | 2022
- 2159
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Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate OperationCapua, Luca / Sprunger, Yann / Elettro, H. et al. | 2022
- 2166
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Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si SubstratesWang, Haibo / Chen, Yue / Zhang, Gong et al. | 2022
- 2173
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Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device PerformanceSang, Pengpeng / Wang, Qianwen / Wei, Wei et al. | 2022
- 2180
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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTsWu, Wei-Min / Ker, Ming-Dou / Chen, Shih-Hung et al. | 2022
- 2188
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Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm DiameterShao, Yanjie / Pala, Marco / Esseni, David et al. | 2022
- 2196
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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic StackingDuan, Xinlv / Huang, Kailiang / Feng, Junxiao et al. | 2022
- 2203
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Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETsWang, Yibo / Gong, Hehe / Jia, Xiaole et al. | 2022
- 2210
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A New Charge-Based Analytical Model for the Gate Current in GaN HEMTsYadav, Rohit / Dutta, Aloke K. et al. | 2022
- 2214
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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical StressLee, Kookjin / Kaczer, Ben / Kruv, Anastasiia et al. | 2022
- 2218
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Improved Synaptic Characteristics of Oxide-Based Electrochemical Random Access Memory at Elevated Temperatures Using Integrated Micro-HeaterLee, Jongwon / Nikam, Revannath Dnyandeo / Kwak, Myonghoon et al. | 2022
- 2222
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Dielectrics for 2D electronics| 2022
- 2224
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From Mega to nano: Beyond one Century of Vacuum Electronics| 2022
- 2226
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TechRxiv: Share Your Preprint Research with the World!| 2022
- 2227
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IEEE Open Access Publishing| 2022
- 2228
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Introducing IEEE Collabratec| 2022
- C1
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Front Cover| 2022
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2022
- C3
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IEEE Transactions on Electron Devices information for authors| 2022