PHYSICA E
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substratesSheng, Weidong / Hawrylak, Pawel et al. | 2006
- 5
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Few-electron quantum dot fabricated with layered scanning force microscope lithographySigrist, M. / Gustavsson, S. / Ihn, T. et al. | 2006
- 9
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Formation and evolution of multimodal size distributions of InAs/GaAs quantum dotsPohl, U.W. / Pötschke, K. / Schliwa, A. et al. | 2006
- 14
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Tuning the cross-gap transition energy of a quantum dot by uniaxial stressSeidl, S. / Högele, A. / Kroner, M. et al. | 2006
- 17
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Controlling anisotropy of GaSb(As)/GaAs quantum dots by self-assembled molecular beam epitaxyJiang, Chao / Sakaki, Hiroyuki et al. | 2006
- 21
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Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substratesAtkinson, P. / Ward, M.B. / Bremner, S.P. et al. | 2006
- 25
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Structure of InAs/GaAs quantum dots grown with Sb surfactantTimm, R. / Eisele, H. / Lenz, A. et al. | 2006
- 29
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Micro-photoluminescence spectroscopy of hierarchically self-assembled quantum dotsRastelli, A. / Kiravittaya, S. / Wang, L. et al. | 2006
- 33
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Formation of ZnO nanodot arrays along the step edges on R-face sapphire by metalorganic chemical vapor depositionKametani, Keisuke / Imamoto, Hiroshi / Fujita, Shizuo et al. | 2006
- 37
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Impurity effects in the optical absorption of quantum ringsDias da Silva, Luis G.G.V. / Ulloa, Sergio E. / Shahbazyan, Tigran V. et al. | 2006
- 41
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Atomic-scale structure and formation of self-assembled In(Ga)As quantum ringsOffermans, P. / Koenraad, P.M. / Wolter, J.H. et al. | 2006
- 46
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Excitonic transitions in semiconductor concentric quantum double ringsKuroda, T. / Mano, T. / Ochiai, T. et al. | 2006
- 49
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Possible generation of electric multipole radiation from solid state quantum ringsKondo, Naoki / Kobayashi, Shigeki / Sakaki, Hiroyuki et al. | 2006
- 53
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on submicron rings and their application for coherent nanoelectronic devicesCarillo, Franco et al. | 2006
- 53
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on submicron rings and their application for coherent nanoelectronic devicesCarillo, Franco / Biasiol, Giorgio / Frustaglia, Diego et al. | 2006
- 53
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Formula Not Shown on Formula Not Shown submicron rings and their application for coherent nanoelectronic devicesCarillo, F. / Biasiol, G. / Frustaglia, D. et al. | 2006
- 57
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Magnetotunneling spectroscopy of ring-shaped (InGa)As quantum dots: Evidence of excited states with 2pz characterWalker, D. / Pulizzi, F. / Patanè, A. et al. | 2006
- 61
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Voltage-controlled linewidth of excitonic transitions in a single self-assembled quantum dotKroner, M. / Högele, A. / Seidl, S. et al. | 2006
- 65
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Temperature-dependent photoluminescence of vertically stacked self-assembled CdSe quantum dots in ZnSeLiu, X. / Dobrowolska, M. / Furdyna, J.K. et al. | 2006
- 69
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On the various impact of chemical composition and elastic strain in SiGe nanoscale islands to the diffuse X-ray scatteringHanke, M. / Boeck, T. et al. | 2006
- 73
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Influence of a lateral electric field on the optical properties of InAs quantum dotsReuter, D. / Stavarache, V. / Wieck, A.D. et al. | 2006
- 77
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Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layersOshima, Ryuji / Hashimoto, Takayuki / Shigekawa, Hidemi et al. | 2006
- 81
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1.5μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substratesAkahane, Kouichi / Yamamoto, Naokatsu / Gozu, Shin-ichiro et al. | 2006
- 81
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1.5mm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substratesAkahane, K. / Yamamoto, N. / Gozu, S. i. et al. | 2006
- 85
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Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a heterostructureMendoza-Alvarez, J.G. / Pires, M.P. / Landi, S.M. et al. | 2006
- 85
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Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a heterostructureMendoza-Alvarez, J.G. et al. | 2006
- 85
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Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a Formula Not Shown heterostructureMendoza-Alvarez, J. G. / Pires, M. P. / Landi, S. M. et al. | 2006
- 89
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Dependence of photoluminescence of CdSe/ZnS on excitation wavelengthOzasa, Kazunari / Nemoto, Shigeyuki / Maeda, Mizuo et al. | 2006
- 93
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Theoretical predictions of the electronic and optical properties of single and coupled (In,Ga)As/GaAs quantum dotsNarvaez, Gustavo A. / He, Lixin / Bester, Gabriel et al. | 2006
- 97
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Inversion of the exciton fine structure splitting in quantum dotsYoung, R.J. / Stevenson, R.M. / Shields, A.J. et al. | 2006
- 101
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Quantum-dot size dependence of exciton fine-structure splittingSeguin, R. / Schliwa, A. / Rodt, S. et al. | 2006
- 104
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Spectroscopic ellipsometry of layer by layer deposited colloidal HgTe nanocrystals exhibiting quantum confinementRinnerbauer, Veronika / Kovalenko, Maksym / Lavchiev, Ventsislav et al. | 2006
- 108
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Structural and optical analysis of size-controlled InAs quantum dashesKümmell, T. / Sauerwald, A. / Somers, A. et al. | 2006
- 111
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Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dotsSarkar, D. / van der Meulen, H.P. / Calleja, J.M. et al. | 2006
- 115
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Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communicationSong, J.D. / Choi, W.J. / Lee, J.I. et al. | 2006
- 119
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Two-photon absorption from single InGaN/GaN quantum dotsJarjour, Anas F. / Green, Alex M. / Parker, Tim J. et al. | 2006
- 123
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Deformation potentials and photo-response of strained PbSe quantum wells and quantum dotsSimma, M. / Lugovyy, D. / Fromherz, T. et al. | 2006
- 127
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Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavityAlon-Braitbart, S. / Poem, E. / Fradkin, L. et al. | 2006
- 131
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Magnetooptical investigations of single self assembled In0.3Ga0.7As quantum dotsMensing, T. / Reitzenstein, S. / Löffler, A. et al. | 2006
- 135
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Cancellation of fine-structure splitting in quantum dots by a magnetic fieldStevenson, R.M. / Young, R.J. / See, P. et al. | 2006
- 139
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Photoreflectance study of InAs quantum dots on GaAs(n11) substratesRojas-Ramírez, J.S. / Pulzara-Mora, A. / Cruz-Hernández, E. et al. | 2006
- 144
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Triggered single-photon emission and cross-correlation properties in InAlAs quantum dotKumano, Hidekazu / Kimura, Satoshi / Endo, Michiaki et al. | 2006
- 148
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Quantum confined Stark effect in single self-assembled GaN/AlN quantum dotsNakaoka, T. / Kako, S. / Arakawa, Y. et al. | 2005
- 152
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Magneto-optical single dot spectroscopy of GaSb/GaAs type II quantum dotsSato, Tomohiko / Nakaoka, Toshihiko / Kudo, Makoto et al. | 2005
- 155
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Raman properties of silicon nanoparticlesMeier, Cedrik / Lüttjohann, Stephan / Kravets, Vasyl G. et al. | 2006
- 159
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Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance–voltage spectroscopyKailuweit, P. / Reuter, D. / Wieck, A.D. et al. | 2006
- 163
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Carrier capture and relaxation through a continuum background in InAs quantum dotsBogaart, E.W. / Haverkort, J.E.M. / Mano, T. et al. | 2006
- 167
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Scanning a metallic tip close to a quantum point contactPioda, A. / Brunner, D. / Kicin, S. et al. | 2006
- 171
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Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dotsGeller, M. / Stock, E. / Sellin, R.L. et al. | 2006
- 175
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Redistribution of photogenerated carriers in neutral and charged InAs quantum dot systemsTorii, Kousuke / Ohmori, Masato / Kawazu, Takuya et al. | 2006
- 179
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Carrier dynamics in strain-induced InGaAsP/InP quantum dotsKoskenvaara, H. / Riikonen, J. / Sormunen, J. et al. | 2006
- 183
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Single InAs/GaAs quantum dots: Photocurrent and cross-sectional AFM analysisFasching, G. / Schrey, F.F. / Roch, T. et al. | 2006
- 187
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Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodesJung, M. / Hirakawa, K. / Ishida, S. et al. | 2006
- 191
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Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxyKoike, Kazuto / Takada, Gen-you / Fujimoto, Kazuya et al. | 2006
- 195
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Dynamics of long-living excitons in tunable potential landscapesGärtner, Andreas / Schuh, Dieter / Kotthaus, Jörg P. et al. | 2006
- 199
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Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wellsKotera, N. / Tanaka, K. et al. | 2006
- 203
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Optically detected cyclotron resonance in a high mobility 2D electron gasMoreau, S. / Byszewski, M. / Sadowski, M.L. et al. | 2006
- 207
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Simulations of germanium epitaxial growth on the silicon (100) surface incorporating intermixingAkis, R. / Ferry, D.K. et al. | 2006
- 211
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Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescenceLin, K.I. / Chen, K.C. / Wang, T.S. et al. | 2006
- 215
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Metal–insulator-transition studied by single-electron tunnelingKönemann, Jens / Haug, R.J. et al. | 2006
- 218
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Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)Teubert, J. / Klar, P.J. / Heimbrodt, W. et al. | 2006
- 222
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Excitation transfer between extended band states and N-related localized states in with x up to 1%Niebling, T. et al. | 2006
- 222
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Excitation transfer between extended band states and N-related localized states in Formula Not Shown with x up to 1%Niebling, T. / Lapp, T. / Kampmann, J. et al. | 2006
- 222
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Excitation transfer between extended band states and N-related localized states in with x up to 1%Niebling, T. / Lapp, T. / Kampmann, J. et al. | 2006
- 226
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Landau levels in a novel two-dimensional electron system interacting with charged quantum dotsKawazu, Takuya / Torii, Kousuke / Sakaki, Hiroyuki et al. | 2006
- 230
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Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition xGozu, Shin-ichiro / Akahane, Kouichi / Yamamoto, Naokatsu et al. | 2006
- 230
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Change in band configuration of quantum wells from type-II to type-I by increasing Sb composition xGozu, Shin-ichiro et al. | 2006
- 230
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Change in band configuration of Formula Not Shown quantum wells from type-II to type-I by increasing Sb composition xGozu, S. i. / Akahane, K. / Yamamoto, N. et al. | 2006
- 234
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Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sourcesSong, J.D. / Choi, W.J. / Lee, J.I. et al. | 2006
- 237
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Novel magneto-oscillatory behavior of confined electrons at a twin boundary in ZnSe and at an interface in GaAs/AlGaAs heterostructuresHattori, R. / Fujii, K. / Ohyama, T. et al. | 2006
- 241
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TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidenceSchardt, M. / Winkler, A. / Rurimo, G. et al. | 2006
- 245
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Buffer design for nitrogen polarity GaN on sapphire by RF-MBE and application to the nanostructure formation using KOH etchingKatayama, Ryuji et al. | 2006
- 245
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Buffer design for nitrogen polarity GaN on sapphire Formula Not Shown by RF-MBE and application to the nanostructure formation using KOH etchingKatayama, R. / Onabe, K. et al. | 2006
- 245
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Buffer design for nitrogen polarity GaN on sapphire by RF-MBE and application to the nanostructure formation using KOH etchingKatayama, Ryuji / Onabe, Kentaro et al. | 2006
- 249
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Influence of N cluster states on band dispersion in GaInNAs quantum wellsHealy, S.B. / Lindsay, A. / O’Reilly, E.P. et al. | 2006
- 254
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Formula Not Shown -Factor tuning of 2D electrons in double-gated Si/SiGe quantum wellsGruber, D. / Pachinger, D. / Malissa, H. et al. | 2006
- 254
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-Factor tuning of 2D electrons in double-gated Si-SiGe quantum wellsGruber, D. et al. | 2006
- 254
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-Factor tuning of 2D electrons in double-gated Si/SiGe quantum wellsGruber, D. / Pachinger, D. / Malissa, H. et al. | 2006
- 258
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Carbon-doped high-mobility hole gases on (001) and (110) GaAsGerl, C. / Schmult, S. / Wurstbauer, U. et al. | 2006
- 262
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Radiative coupling of intersubband transitions in GaAs/AlGaAs multiple quantum wellsShih, T. / Reimann, K. / Woerner, M. et al. | 2006
- 266
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Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressuresHakkarainen, T. / Pavelescu, E.-M. / Likonen, J. et al. | 2006
- 270
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The Tersoff potential for phonons in GaAsPowell, Dave / Migliorato, Max A. / Cullis, Anthony G. et al. | 2006
- 273
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Quantum Monte Carlo simulation of exciton–exciton scattering in a GaAs/AlGaAs quantum wellShumway, J. et al. | 2006
- 277
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Resonant Raman scattering by N-related local modes in AlGaAs/InGaAsN multiquantum wellsLazić, S. / Calleja, J.M. / Hey, R. et al. | 2006
- 281
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Two sub-band conductivity of Si quantum wellPrunnila, Mika / Ahopelto, Jouni et al. | 2006
- 285
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Effect of inter-miniband tunneling on current resonances due to the formation of stochastic conduction networks in superlatticesHardwick, D.P.A. / Naylor, S.L. / Bujkiewicz, S. et al. | 2006
- 289
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Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectorsHaugan, H.J. / Szmulowicz, F. / Brown, G.J. et al. | 2006
- 293
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Correlation between subband population and threshold current densities in GaAs/(Al,Ga)As quantum-cascade structures/lasers with different barrier heightsSchrottke, L. / Lu, S.L. / Hey, R. et al. | 2006
- 297
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Resonant tunneling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution functionMityagin, Yury A. / Murzin, Vladimir N. / Telenkov, Maxim P. et al. | 2006
- 301
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Transport in a shunted surface superlattice with a perpendicular magnetic fieldFeil, T. / Tranitz, H.-P. / Gerl, C. et al. | 2006
- 305
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Magneto-oscillation of mid-gap photoluminescence in AlAs:Yb/GaAs superlatticesSato, Koichi / Takamasu, Tadashi / Kido, Giyuu et al. | 2006
- 309
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Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substratesMomose, H. / Okai, H. / Deguchi, H. et al. | 2006
- 313
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Resonator fabrication for cavity enhanced, tunable Si/Ge quantum cascade detectorsGrydlik, M. / Rauter, P. / Fromherz, T. et al. | 2006
- 316
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Microcavity THz quantum cascade laserFasching, G. / Benz, A. / Zobl, R. et al. | 2006
- 320
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Carrier dynamics and dispersive terahertz Bloch gain in semiconductor superlatticesHirakawa, K. / Sekine, N. et al. | 2006
- 325
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Loss and gain in Bloch oscillating super-superlattices: THz Stark ladder spectroscopyRobrish, Peter / Xu, Jing / Kobayashi, Shigeki et al. | 2006
- 329
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Strong Fermi-edge singularity in ultra-high-quality AlGaAs/GaAs quantum wiresWang, X.-L. / Ogura, M. / Guillet, T. et al. | 2006
- 333
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Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structuresGuzenko, V.A. / Schäpers, Th. / Indlekofer, K.M. et al. | 2006
- 337
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Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted Formula Not Shown channel with corrugated interfacesAkiyama, Y. / Kawazu, T. / Ishida, S. et al. | 2006
- 337
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Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted channel with corrugated interfacesAkiyama, Y. / Kawazu, T. / Ishida, S. et al. | 2006
- 337
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Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted channel with corrugated interfacesAkiyama, Y. et al. | 2006
- 341
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Nature of the band gap of silicon and germanium nanowiresHarris, Clive / O’Reilly, E.P. et al. | 2006
- 346
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1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxyShimomura, S. / Toritsuka, T. / Uenishi, A. et al. | 2006
- 346
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1.3mm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxyShimomura, S. / Toritsuka, T. / Uenishi, A. et al. | 2006
- 350
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Hartree–Fock versus quantum Monte Carlo study of persistent current in a one-dimensional ring with single scattererVagner, Pavel / Moško, Martin / Németh, Radoslav et al. | 2006
- 354
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Spin relaxation and antiferromagnetic coupling in semiconductor quantum dotsTackeuchi, A. / Kuroda, T. / Yamaguchi, K. et al. | 2006
- 359
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Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wiresKim, Jin Woo / Kim, Nammee / Won Kang, Tae et al. | 2006
- 363
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Exchange-enhanced spin-splitting in a two-dimensional electron gas in the presence of the Rashba spin–orbit interactionYang, C.H. / Xu, W. / Zeng, Z. et al. | 2006
- 367
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Enhancement of spin polarization in asymmetrically coupled CdSe and CdZnMnSe quantum dots in ZnSe matrixLee, S. / Dobrowolska, M. / Furdyna, J.K. et al. | 2006
- 371
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Epitaxial Heusler alloy Formula Not Shown films on GaAs(001) substratesHerfort, J. / Jenichen, B. / Kaganer, V. et al. | 2006
- 371
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Epitaxial Heusler alloy films on GaAs(001) substratesHerfort, J. / Jenichen, B. / Kaganer, V. et al. | 2006
- 371
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Epitaxial Heusler alloy films on GaAs(001) substratesHerfort, J. et al. | 2006
- 375
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Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structuresSankowski, P. / Kacman, P. / Majewski, J. et al. | 2006
- 379
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Spin configurations in strained magnetic superlattices grown by molecular beam epitaxyLechner, R.T. et al. | 2006
- 379
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Spin configurations in strained magnetic superlattices grown by molecular beam epitaxyLechner, R.T. / Springholz, G. / Schülli, T.U. et al. | 2006
- 379
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Spin configurations in strained magnetic Formula Not Shown superlattices grown by molecular beam epitaxyLechner, R. T. / Springholz, G. / Schulli, T. U. et al. | 2006
- 383
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Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junctionUemura, Tetsuya / Miura, Ryotaro / Yamazuki, Takashi et al. | 2006
- 387
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Contactless electroreflectance studies of the band filling effect inLee, C.S. et al. | 2006
- 387
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Contactless electroreflectance studies of the band filling effect in Formula Not ShownLee, C. S. / Chang, C. C. / Chang, Y. H. et al. | 2006
- 387
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Contactless electroreflectance studies of the band filling effect inLee, C.S. / Chang, C.C. / Chang, Y.H. et al. | 2006
- 391
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Rashba interaction as an external Yang–Mills field applied to one-dimensional systemLiu, Chao-xing / Zhu, Zhen-Gang / Zhu, Bang-fen et al. | 2006
- 395
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Few-electron spin and charge configurations in circular and rectangular vertical quantum dot mesas in a magnetic field: Experiment and full three-dimensional self-consistent simulationsAusting, D.G. / Yu, G. / Melnikov, D.V. et al. | 2006
- 399
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Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dotsMaksimov, O. / Zhou, X. / Tamargo, M.C. et al. | 2006
- 403
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Doping profile vs spin-resolved subband structure and spontaneous magnetization of selectively Mn-doped DMS narrow quantum wellsKim, Hye-Jung / Yi, Kyung-Soo et al. | 2006
- 407
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Paramagnetism of interacting few-electron quantum dot with single magnetic impurityCheng, Shun-Jen et al. | 2006
- 412
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Spin injection and accumulation in inhomogeneous semiconductorsCsontos, Dan / Ulloa, Sergio E. et al. | 2006
- 416
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Spin polarized tunneling in III–V-based heterostructures with a ferromagnetic MnAs thin film and GaAs:MnAs nanoclustersHai, Pham Nam / Yokoyama, Masafumi / Ohya, Shinobu et al. | 2006
- 419
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Positive magnetoresistance in the variable range hopping regime in CdSeEl kaaouachi, Abdelhamid / Abdia, Rachid / Nafidi, Abdelhakim et al. | 2006
- 422
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Ferromagnetic Ge(Mn) nanostructuresAhlers, S. / Bougeard, D. / Riedl, H. et al. | 2006
- 426
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Interplay between polarization anisotropy and longitudinal spin relaxation in semiconductor quantum dotsFavero, I. / Berthelot, A. / Cassabois, G. et al. | 2006
- 430
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Transition metal-doped quantum dots: Optical detection and manipulation of spin statesBhattacharjee, A.K. / Pérez-Conde, J. et al. | 2006
- 434
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Electrical spin injection from ZnMnSe into InGaAs-based quantum structuresLöffler, W. / Tröndle, D. / Kalt, H. et al. | 2006
- 438
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Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junctionKohda, M. / Ohno, Y. / Matsukura, F. et al. | 2006
- 442
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Spin and negative differential conductance in the transport through a quantum dot in a magnetic fieldRogge, M.C. / Cavaliere, F. / Sassetti, M. et al. | 2006
- 446
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Spin transport and manipulation by mobile potential dots in GaAs quantum wellsStotz, J.A.H. / Hey, R. / Santos, P.V. et al. | 2006
- 450
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Effects of an elastic scatterer on the DC spin current generation in a Rashba-type quantum channelWang, L.Y. / Tang, C.S. / Chu, C.S. et al. | 2006
- 454
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Relaxation dynamics of ferromagnetic domains in (Cd,Mn)Te quantum wellsKossacki, P. / Ferrand, D. / Goryca, M. et al. | 2006
- 458
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Beyond the Rashba modelGvozdić, D.M. / Ekenberg, U. et al. | 2006
- 462
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Spin-polarization induced by Rashba spin–orbit coupling in three-terminal devicesYamamoto, M. / Dittmer, K. / Kramer, B. et al. | 2006
- 466
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Generation and manipulation of nonclassical light using photonic crystalsVuckovic, Jelena / Englund, Dirk / Fattal, David et al. | 2006
- 471
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Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavitiesSęk, G. / Hofmann, C. / Reithmaier, J.P. et al. | 2006
- 476
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Propagation and scattering of light in opal heterojunctionsRomanov, Sergei G. / Egen, Marc / Zentel, Rudolf et al. | 2006
- 480
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Indistinguishable single photons from a single InAs quantum dot in a photonic crystal slab cavityLaurent, Stéphane / Varoutsis, Spyros / Le Gratiet, Luc et al. | 2006
- 484
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Nonlinear tuning of 3D photonic band-gap structures for single-photon on demand sourcesFlorescu, Marian / Scheel, Stefan / Lee, Hwang et al. | 2006
- 488
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Emission properties of a single-emitter laser in photonic crystalsFlorescu, Lucia / John, Sajeev / Quang, Tran et al. | 2006
- 492
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Polaritonic polarization effects in a semiconductor microcavitySanvitto, D. / Krizhanovskii, D.N. / Ceccarelli, S et al. | 2006
- 496
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Acoustically tunable photonic structures based on microcavity polaritonsde Lima, M.M. Jr. / Hey, R. / Camacho, J. et al. | 2006
- 500
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Polarisation control and emission enhancement of a quantum dot in ultra-high finesse microcavity pillarsTimpson, J.A. / Sanvitto, D. / Daraei, A. et al. | 2006
- 504
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Optical characterisation of InAs/InP quantum dot photonic cavity membranesFrédérick, S. / Dalacu, D. / Aers, G.C. et al. | 2006
- 508
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Optical beam-induced current in planar two-dimensional n–p–n devicesWerner, C. / Reuter, D. / Wieck, A.D. et al. | 2006
- 512
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A piezoresistive cantilever integrating an InAs-based semiconductor–superconductor junctionOkamoto, Hajime / Akazaki, Tatsushi / Ueki, Mineo et al. | 2006
- 516
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Optical communications waveband lasing from Sb-based quantum dot vertical-cavity laserYamamoto, Naokatsu / Akahane, Kouichi / Gozu, Shin-Ichirou et al. | 2006
- 520
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Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layersSawano, K. / Satoh, H. / Nakagawa, K. et al. | 2006
- 524
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Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structureNam, H.D. / Doyennette, L. / Song, J.D. et al. | 2006
- 528
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Charge pumping in driven electron ratchetsMüller, Thorsten / Lorke, Axel / Reuter, Dirk et al. | 2006
- 532
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Gate bias controlled NDR in an in-plane-gate quantum dot transistorSon, S.H. / Choi, Y.S. / Hwang, S.W. et al. | 2006
- 536
-
Nonlocal versus local rectification in multiply connected electron waveguide structuresKnop, Michael / Wieser, Ulrich / Kunze, Ulrich et al. | 2006
- 539
-
Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junctionPoenariu, S.A. / Wieser, U. / Kunze, U. et al. | 2006
- 543
-
Two-photon-absorption-assisted Tera Hertz optical gain modulation in quantum-dot optical amplifiersJu, H. / Uskov, A.V. / Li, Z. et al. | 2006
- 547
-
Self-aligned doping profiles in nanoscale silicon structuresAhopelto, Jouni / Prunnila, Mika / Pursula, Eeva et al. | 2006
- 550
-
Current–voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum ringsNoda, T. / Koguchi, N. et al. | 2006
- 554
-
A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3μm based on ordering in InGaAsPKrämer, Stefan / Neumann, S. / Prost, W. et al. | 2006
- 554
-
A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3mm based on ordering in InGaAsPKramer, S. / Neumann, S. / Prost, W. et al. | 2006
- 558
-
Influence of polarization field on the lasing properties of III-nitride quantum wellsDialynas, G.E. / Deligeorgis, G. / Zervos, M. et al. | 2006
- 562
-
Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistorsWang, Z. / Reimann, K. / Woerner, M. et al. | 2006
- 566
-
Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substratesWu, Kun-Ta / Chang, P.H. / Lien, S.T. et al. | 2006
- 569
-
Electronic excitations of double-walled armchair carbon nanotubesHo, Y.H. / Ho, G.W. / Li, T.S. et al. | 2006
- 573
-
Temperature-dependent electronic excitations in a 2D graphite layerHo, J.H. / Chiu, C.W. / Lu, C.L. et al. | 2006
- 577
-
Dielectric screening for carbon nanotubes in a gating electric fieldChen, S.C. / Shyu, F.L. / Lue, C.S. et al. | 2006
- 581
-
Electronic properties of armchair carbon nanotube arrayWu, S.J. / Ho, Y.H. / Chang, C.P. et al. | 2006
- 585
-
Low-energy electronic properties of multilayer graphite in an electric fieldLu, C.L. / Chang, C.P. / Ho, J.H. et al. | 2006
- 589
-
Probing high quality pentacene monolayers by optical methodsHe, Rui / Tassi, Nancy G. / Blanchet, Graciela B. et al. | 2006
- 592
-
A small polaron hopping model for multiphonon-assisted transport along DNA molecules, in the presence of disorderTriberis, Georgios / Simserides, Constantinos / Karavolas, Vasileios et al. | 2006
- 596
-
Modelling space-charge limited transport in discotic liquid crystalsLever, L. / Bushby, R.J. / Kelsall, R.W. et al. | 2006
- 600
-
Index of Authors and Papers| 2006
- 610
-
Subject Index| 2006
- v
-
Proceedings of the 12th International Conference on Modulated Semiconductor Structures| 2006
- viii
-
Conference Organization| 2006
- xi
-
Contents page| 2006
- xxi
-
List of Authors| 2006
-
PrefaceHu, Evelyn L. et al. | 2006