Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Simulation and evaluation of nuclear reaction spectraVizkelethy, G. et al. | 1990
- 6
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SPACES: A PC implementation of the stochastic theory of energy loss for narrow-resonance depth profilingVickridge, Ion / Amsel, Georges et al. | 1990
- 12
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Analytic calculation for some useful depth profiles of the linear expansion coefficients used in spacesAmsel, Georges / Vickridge, lan et al. | 1990
- 16
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Calculation of energy loss spectra through very thin layers: Application to tandem accelerator gas strippersVickridge, Ian / Amsel, Georges et al. | 1990
- 20
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Deep range profiling by Rutherford backscattering and nuclear reaction analysisOberschachtsiek, P. / Schüle, V. / Günzler, R. et al. | 1990
- 26
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Fits of non-rutherford cross sections and their inclusion in the RUMP simulatorKnox, J.M. / McLeod, R.J. / Mayo, D.R. et al. | 1990
- 30
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Behaviour of the 12C(4He, 4He)12C elastic scattering cross section at Eα = 0.4–1.8 MeVTong, S.Y. / Lennard, W.N. / Alkemade, P.F.A. et al. | 1990
- 33
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Cross sections for the 32S(p, p′γ)32S nuclear reaction used for the profiling of sulphur on materials surfacesTsartsarakos, C. / Misaelides, P. / Katsanos, A. et al. | 1990
- 36
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Off-resonance and straggling measurements using the 1H(15N, αγ)12C reactionHjörvarsson, B. / Rydén, J. et al. | 1990
- 41
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Hydrogen in “anhydrous” mineralsRossman, George R. et al. | 1990
- 45
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Measurements of the accumulation of hydrogen at the silicon-silicon-dioxide interface using nuclear reaction analysisBriere, M.A. / Wulf, F. / Braunig, D. et al. | 1990
- 49
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A study of hydrogen atoms on solid surfaces by utilizing the doppler broadening of the 1H(15N, αγ)12C nuclear reactionFujimoto, Fuminori et al. | 1990
- 54
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Dynamic inventory of implanted deuterium in graphite at 116–223 KScherzer, B.M.U. / Wang, J. / Moller, W. et al. | 1990
- 57
-
Hydrogen in the first wall of nuclear fusion plasma devicesScherzer, B.M.U. et al. | 1990
- 62
-
External ion beam analysis of the TFTR bumper limitersWalsh, D.S. / Knox, J.M. / Doyle, B.L. et al. | 1990
- 66
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Deuterium distributions in cathodically charged type-304 stainless steel measured by the d(3He, p)α nuclear reactionLaursen, T. / Wolf, O.K. et al. | 1990
- 70
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Neutron depth profiling by coincidence spectrometryParikh, Nalin R. / Frey, Eric C. / Hofsäss, Hans C. et al. | 1990
- 75
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Selective activation analysis with ion-beam-tailored neutron spectra — A comparison between the reactions 7 Li(p, n)7Be and 9Be(p, n)9BWatterson, J.I.W. / Pillay, A.E. / Nailand, P. et al. | 1990
- 81
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Boron analysis of thin layers using prompt nuclear techniquesMoncoffre, N. / Millard, N. / Jaffrezic, H. et al. | 1990
- 86
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Residual carbon detection in ceramic substrates by a nuclear reaction techniqueChou, N.J. / Zabel, T.H. / Kim, J. et al. | 1990
- 91
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Absolute surface carbon coverage determination via the 12C(3He, p)14N reactionTong, S.Y. / Lennard, W.N. / Alkemade, P.F.A. et al. | 1990
- 95
-
Study of ionic movements during anodic oxidation of nitrogen-implanted aluminiumTerwagne, G. / Lucas, S. / Bodart, F. et al. | 1990
- 100
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Use of the 16O(3He, α)15O reaction for studying oxygen-containing thin filmsAbel, F. / Amsel, G. / d'Artemare, E. et al. | 1990
- 105
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Fast analysis of oxygen in fluoride glasses (ZBLAN) by charged-particle activation [16O(d, n)17F]Barthe, M.F. / Giovagnoli, A. / Blondiaux, G. et al. | 1990
- 107
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The determination of absolute oxygen coverage by nuclear reaction analysisMitchell, I.V. / Massoumi, G.R. / Lennard, W.N. et al. | 1990
- 110
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18O isotope studies on the redistribution of oxygen in noncontinuous buried layers formed by high-dose oxygen ion implantationChater, R.J. / Kilner, J.A. / Reeson, K.J. et al. | 1990
- 115
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A study of fluorine in tin oxide filmsZironi, E.P. / Rickards, J. / Maldonado, A. et al. | 1990
- 119
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Fluorine depth profiles as a relative dating method of chipped flintsWalter, P. / Menu, M. / Vickridge, I.C. et al. | 1990
- 123
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Ion beam analysis of edge effects in Al/M/Al stripesGuo, X.S. / Lanford, W.A. / Rodbell, K.P. et al. | 1990
- 126
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Thin-layer activation applied to erosive wearNeumann, W. / Stalder, C. et al. | 1990
- 130
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IBA applied to adsorption and coadsorption studies of H2 and C6H6 on Ni(111)Fallavier, M. / Benmansour, M. / Thomas, J.P. et al. | 1990
- 135
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Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and siliconDicello, J.F. / Schillaci, M.E. / Lon-Chang, Liu et al. | 1990
- 139
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On the ambiguity in the analysis of Rutherford backscattering spectraAlkemade, P.F.A. / Habraken, F.H.P.M. / Van Der Weg, W.F. et al. | 1990
- 143
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Heavy-ion backscattering spectrometry (HIBS) for high-sensitivity surface impurity detectionKnapp, J.A. / Doyle, B.L. et al. | 1990
- 147
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Analytical capabilities of ERDA in transmission geometryTirira, J. / Trocellier, P. / Frontier, J.P. et al. | 1990
- 151
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Depth profiling of light elements using elastic recoil coincidence spectroscopy (ERCS)Hofsäss, H.C. / Parikh, N.R. / Swanson, M.L. et al. | 1990
- 157
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A 2-dimensional RBS simulation program for studying the edges of multilayer integrated circuit componentsGuo, X.S. / Lanford, W.A. / Rodbell, K.P. et al. | 1990
- 160
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Criteria for validity of Rutherford scatter analysesButler, J.W. et al. | 1990
- 166
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An iterative computer analysis package for elastic recoil detection (ERD) experimentsOxorn, K. / Gujrathi, S.C. / Bultena, S. et al. | 1990
- 171
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Monte Carlo simulation of RBS spectra: Comparison to experimental and empirical resultsSteinbauer, Erich / Bauer, Peter / Biersack, Jochen et al. | 1990
- 176
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Scattering recoil coincidence spectrometry: A new experimental technique for profiling hydrogen isotopes in low-Z thin filmsForster, J.S. / Leslie, J.R. / Laursen, T. et al. | 1990
- 181
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The use of helium ion RBS for profiling epitaxial layers of CdxHg1−xTeAvery, A.J. / Diskett, D.J. / Lane, D.W. et al. | 1990
- 186
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ERDA of hydrogen and helium using an 8 MeV 16O beamQiu, Qi / Kurimoto, K. / Nakajima, M. et al. | 1990
- 190
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ERD measurement of the mean ranges and variances of 0.75–2.0 keV deuterium ions in Be, C and SiRoss, G.G. / Terreault, B. et al. | 1990
- 194
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Determination of hydrogen in leached UO2 and SYNROCMatzke, Hj. / Mea, G.Della / Freire, F.L. Jr. et al. | 1990
- 199
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Elastic recoil detection analysis of hydrogen adsorbed on solid surfacesOura, Kenjiro / Naitoh, Masamichi / Shoji, Fumiya et al. | 1990
- 203
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Theoretical and experimental study of low-energy 4He-induced 1H elastic recoil with application to hydrogen behavior in solidsTirira, J. / Trocellier, P. / Frontier, J.P. et al. | 1990
- 208
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Crystallographic polarity of ideomorphic faces on a cubic boron nitride single crystal determined by Rutherford backscattering spectroscopyKobayashi, T. / Mishima, O. / Iwaki, M. et al. | 1990
- 212
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Comparison between oxygen depth profiles in oxygen-implanted titanium measured by RBS and XPS combined with argon sputteringIwaki, Masaya / Okabe, Yoshio / Yabe, Katsumasa et al. | 1990
- 216
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RBS analysis of Si diffusion in photoresist during silylationMadakson, P. / Nunes, S. / Galligan, E. et al. | 1990
- 219
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RBS study on bombardment-induced redistribution of copper impurities in silicon using neon, oxygen and nitrogen ion beams at different impact anglesMenzel, N. / Wittmaack, K. et al. | 1990
- 223
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Determination of the infrared proportionality coefficient of the CHn stretching mode for a-C:H and a-SiC:H films using ERD methodsTanaka, M. / Iwata, Y. / Fujimoto, F. et al. | 1990
- 227
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Analysis of a high-Tc superconductor by high-energy elastic backscatteringShiming, Wu / Huansheng, Cheng / Chengteng, Zhang et al. | 1990
- 230
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The use of ion beam techniques to characterize lead diffusion in mineralsCherniak, D.J. / Lanford, W.A. / Ryerson, F.J. et al. | 1990
- 234
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IBA using a small tandem and a single-ended Van de GraaffArai, E. / Oguri, Y. / Ogawa, M. et al. | 1990
- 239
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Investigation of a molybdena crystal by RBSZhang, Jizhong / Tao, Kun / Yan, Xinshui et al. | 1990
- 242
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LPCVD of tungsten studied with in-situ RBSWillemsen, M.F.C. / Kuiper, A.E.T. et al. | 1990
- 247
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Advanced concepts for semiconductor nuclear radiation detectorsKemmer, J. et al. | 1990
- 252
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A low-background detection system using a BGO detector for sensitive hydrogen analysis with the 1H(15N, αγ)12C reactionKuhn, D. / Rauch, F. / Baumann, H. et al. | 1990
- 256
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Suppression of background radiation in BGO and NaI detectors used in nuclear reaction analysisHorn, K.M. / Lanford, W.A. et al. | 1990
- 260
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The detection of heavy ions with PIN diodesGujrathi, S.C. / Hetherington, D.W. / Hinrichsen, P.F. et al. | 1990
- 265
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A curved detection slit to improve ERD energy and depth resolutionBrice, D.K. / Doyle, B.L. et al. | 1990
- 270
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Pulse height defects for 16O, 35Cl and 81Br ions in silicon surface barrier detectorsCliche, L. / Gujrathi, S.C. / Hamel, L.A. et al. | 1990
- 275
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Heavy-ion energy resolution of SSB detectorsHinrichsen, P.F. / Hetherington, D.W. / Gujrathi, S.C. et al. | 1990
- 281
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On the calibration of low-energy ion acceleratorsLennard, W.N. / Tong, S.Y. / Massoumi, G.R. et al. | 1990
- 285
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Characterization of external 3He ion beams used for ex-vacuo nuclear reaction analysis of deuteriumLee, S.R. / Walsh, D.S. / Doyle, B.L. et al. | 1990
- 290
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Description of a sample holder for ion channeling near liquid-helium temperatureDaudin, B. / Dubus, M. / Viargues, F. et al. | 1990
- 293
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ARAMIS: An ambidextrous 2 MV accelerator for IBA and MeV implantationCottereau, E. / Camplan, J. / Chaumont, J. et al. | 1990
- 296
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The 2 MV tandem pelletron accelerator of the Louvre MuseumAmsel, G. / Menu, M. / Moulin, J. et al. | 1990
- 302
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RFQ ion acceleratorsSchempp, A. et al. | 1990
- 307
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PIXE analysis and imaging of papyrus documentsLövestam, N.E.Göran / Swietlicki, Erik et al. | 1990
- 311
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Colorants used in ancient Egyptian glassmaking: Specialized studies using PIXE spectrometrySwann, C.P. / McGovern, P.E. / Fleming, S.J. et al. | 1990
- 315
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Identification of pigments in some colours on miniatures from the medieval age and early RenaissanceMacArthur, J.D. / Carmine, P.Del / Lucarelli, F. et al. | 1990
- 322
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Below-surface analysis of inclusions with PIXE and PIGEMacArthur, J.D. / Ma, X.-P. / Palmer, G.R. et al. | 1990
- 327
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PIXE analysis to determine the trace-element concentrations in a series of galena (PbS) specimens from different localitiesReeson, Karen J. / Stanley, Chris J. / Jeynes, Chris et al. | 1990
- 333
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PIXE determination of silicon/aluminium ratios in zeolites and geological materialsPillay, A.E. / Peisach, M. / Carolissen, R. et al. | 1990
- 337
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PIXE and PIGE studies of ion diffusion through phospholipid bilayers containing cholesterolPalmer, G.R. / MacArthur, J.D. / Singer, M.A. et al. | 1990
- 341
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PIXE measurements of air particulate elemental composition in the urban area of Florence, ItalyDel Carmine, P. / Lucarelli, F. / Mandò, P.A. et al. | 1990
- 347
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PIXE analysis of GaAs and ZnSeReid, I. / Seiberling, L.E. / Van Rinsvelt, H.A. et al. | 1990
- 352
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PIXE-PIGE analysis of thin fly-ash samplesBoni, C. / Caridi, A. / Cereda, E. et al. | 1990
- 356
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PIXE: A tool for research and educationWilliams, Evan T. / Wu, Xiaowen / Alkins, Ricardo et al. | 1990
- 360
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Improvement of the energy resolution and the ratio of a crystal spectrometer combined with a position-sensitive proportional counter for PIXEHamanaka, H. / Okane, M. / Yamamoto, Y. et al. | 1990
- 364
-
Electronic excitation and charge exchange in low-energy He+ scattering from solid surfacesSouda, R. / Aizawa, T. / Oshima, C. et al. | 1990
- 369
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Inelastic scattering of D, He, and Li ions from KISouda, R. / Aizawa, T. / Oshima, C. et al. | 1990
- 374
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Computer simulation of reionization in ISSPierson, E. / Beuken, J.-M. / Bertrand, P. et al. | 1990
- 380
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Impact-collision ion scattering spectroscopy for direct surface structure analysisDaley, Richard S. / Williams, R.Stanley et al. | 1990
- 384
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The use of a calibration in low-energy ion scattering: Preferential sputtering and S segregation in CuPd alloysAckermans, P.A.J. / Krutzen, G.C.R. / Brongersma, H.H. et al. | 1990
- 390
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Charge exchange processes in low-energy He+ ion scattering from Si and Pd2Si surfacesVan Leerdam, G.C. / Lenssen, K.-M.H. / Brongersma, H.H. et al. | 1990
- 394
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Impact-collision ion-scattering spectrometry studies of the surfaceCornelison, D.M. / Chang, C.S. / Tsong, I.S.T. et al. | 1990
- 398
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Medium-energy ion scattering studies of the structure of some reconstructed metal surfacesGustafsson, Torgny / Fenter, Paul / Häberle, Patricio et al. | 1990
- 403
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A computer study of the energy loss spectrum of 100 keV H+ at a W(111) surfaceYamamura, Y. / Matsunami, N. / Kitoh, K. et al. | 1990
- 408
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Real-time monitoring of molecular-beam epitaxy processes with coaxial impact-collision ion scattering spectroscopy (CAICISS)Katayama, M. / Nomura, E. / Soejima, H. et al. | 1990
- 412
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High-resolution analysis of protons scattered from solid surfacesMatsunami, Noriaki / Kitoh, Kenshin / Kanasaki, Jun-ichi et al. | 1990
- 416
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Segregation at the clean and oxidized Pt0.5Ni0.5(111) surface studied by medium-energy ion scatteringDeckers, S. / Habraken, F.H.P.M. / Van der Weg, W.F. et al. | 1990
- 417
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Depth-dependent defect analysis in RBS/channelingSavin, W. / Feldman, L.C. et al. | 1990
- 420
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Regrowth of radiation-damaged layers in natural diamondLiu, B. / Sandhu, G.S. / Parikh, N.R. et al. | 1990
- 424
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Studies of surface atomic structure of Al(l00) by MeV ion scatteringHuan-Sheng, Cheng / Zhi-Xiang, Chui / Hong-Jie, Xu et al. | 1990
- 429
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Peak shape analysis for the determination of interface structure in reactive metallic bilayers: Pd on AlSmith, R.J. / Van der Gon, A.W.Denier / Van der Veen, J.F. et al. | 1990
- 434
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Ion channeling study of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) grown by MBEHashimoto, Shin / Xiao, Q.F. / Gibson, W.M. et al. | 1990
- 438
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Lattice site location of clustered boron atoms in siliconSmulders, P.J.M. / Boerma, D.O. / Nielsen, B.Bech et al. | 1990
- 442
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Ion channeling analysis of extended-defect annealing in silicon by rapid thermal processesCalcagno, L. / Coffa, S. / Spinella, C. et al. | 1990
- 446
-
Investigation of defects in GaAs by dechannelingWesch, W. / Gärtner, K. / Jordanov, A. et al. | 1990
- 450
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Lattice site location of Te in GaAsSmulders, P.J.M. / Boerma, D.O. / Shaanan, M. et al. | 1990
- 455
-
Structural analysis of an epitaxial layer of CdTe on GaAs by the multidirectional channeling techniqueWielunski, L.S. / Kwietniak, M.S. / Pain, G.N. et al. | 1990
- 459
-
Polarity determination of epitaxial structures of CdTe on GaAs by channeling techniquesWielunski, L.S. / Kwietniak, M.S. / Pain, G.N. et al. | 1990
- 464
-
Channeling lattice location of Se implanted into InP by RBS and PIXEXiao, Q.F. / Hashimoto, Shin / Gibson, W.M. et al. | 1990
- 467
-
RBS/channeling study on the annealing behavior of Cu thin films on Si(100) and (111) substratesNakahara, Takehiko / Ohkura, Shigeharu / Shoji, Fumiya et al. | 1990
- 471
-
Lattice location of B atoms in Ni0.75Al0.15Ti0.10 intermetallic compounds as observed by the channeling methodTanaka, Koki / Yagi, Eiichi / Masahashi, Naoya et al. | 1990
- 476
-
Oxygen depth-profile channeling of radiation-damaged high-Tc thin-film superconductorsTesmer, J.R. / Nastasi, M. et al. | 1990
- 480
-
Ion irradiation effect in a Bi-Sr-Ca-Cu-O oxide superconductorKobayashi, T. / Takekawa, S. / Shigematsu, K. et al. | 1990
- 483
-
Epitaxial growth analysis of YBaCuO thin films by ion backscattering and channeling spectrometryMeyer, O. / Geerk, J. / Li, Q. et al. | 1990
- 488
-
Room-temperature deposition and initial stages of cobalt silicide interface formation on A Si(111) √3 × √3 surfaceLuo, L. / Smith, G.A. / Hashimoto, Shin et al. | 1990
- 492
-
Temperature dependence of damage ranges in some metals after argon implantationFriedland, E. / Alberts, H.W. / Fletcher, M. et al. | 1990
- 495
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Combined RBS/channeling and PAC studies of hafnium-doped LiNbO3Rebouta, L. / Soares, J.C. / Da Silva, M.F. et al. | 1990
- 499
-
Analysis of proton channeling by lead fluorideBenenson, R.E. et al. | 1990
- 503
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Some practical considerations for ion microtomographyPontau, A.E. / Antolak, A.J. / Morse, D.H. et al. | 1990
- 508
-
The influence of accelerator parameters on the performance of submicron quadrupole probe-forming systemsGrime, G.W. / Watt, F. / Jamieson, D.N. et al. | 1990
- 513
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Micro- and milli-PIXE analysis at 40 MeV — Why, how and when?McKee, J.S.C. / Durocher, J.J.G. / Gallop, D. et al. | 1990
- 514
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Total analysis by IBABird, J.R. et al. | 1990
- 519
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Ion-beam mixing in micron-size widthsBenenson, R.E. / Berning, P. / Bakhru, H. et al. | 1990
- 523
-
RBS tomography of SOI structures using a MeV ion microprobeKinomura, A. / Takai, M. / Namba, S. et al. | 1990
- 527
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The application of synchrotron radiation to microprobe trace-element analysis of biological samplesGordon, B.M. / Hanson, A.L. / Jones, K.W. et al. | 1990
- 532
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Micro-PIXE analysis of impurity distributions in “trees” grown in high-voltage cablesHinrichsen, P.F. / Kajrys, G. / Houdayer, A. et al. | 1990
- 536
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Characterization of masklessly deposited metal lines by a micro-RBS probeKinomura, A. / Takai, M. / Namba, S. et al. | 1990
- 540
-
A 500 keV ion beam accelerator for microbeam formationAgawa, Y. / Uchiyama, T. / Hoshino, A. et al. | 1990
- 543
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A Tandetron-based microbeam systemSie, S.H. / Ryan, C.G. / Cousens, D.R. et al. | 1990
- 548
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Recent advances in the nuclear microprobe at the Lund institute of technologyPallon, Jan / Johansson, S.A.E. / Hult, M. et al. | 1990
- 553
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A microbeam line for medium-energy ion beamsTakai, M. / Matsuo, T. / Kinomura, A. et al. | 1990
- 557
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The microprobe at the Eindhoven University of TechnologyMutsaers, P.H.A. / Los, G. / Klein, S.S. et al. | 1990
- 561
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Some archaeologic applications of accelerator radiocarbon analysisDonahue, D.J. / Jull, A.J.T. / Linick, T.W. et al. | 1990
- 565
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AMS advances in the geosciences and heavy-element analysisRucklidge, J.C. / Wilson, G.C. / Kilius, L.R. et al. | 1990
- 570
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Tandetron accelerators as AMS instrumentsKieser, W.E. / Kilius, L.R. / Nadeau, M.-J. et al. | 1990
- 575
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Molecular-interference-free accelerator mass spectrometryMatteson, S. / Marble, D.K. / Hodges, L.S. et al. | 1990
- 580
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Analysis of carbon at trace level by ion sputtering and laser resonant postionizationGelin, P. / Barthe, M.F. / Debrun, J.L. et al. | 1990
- 582
-
Time-dependent angular distribution of sputtered particles from amorphous targetsYamamura, Yasunori et al. | 1990
- 586
-
Oxygen redistribution in silicon during zone melting recrystallizationMertens, P.W. / Vandervorst, W. / Leclair, J. et al. | 1990
- 592
-
Matrix effects in sims depth profiles of SiGe superlatticesJackman, J.A. / Dignard-Bailey, L. / Storey, R.S. et al. | 1990
- 597
-
IBA in the museum: Why AGLAEMenu, Michel et al. | 1990
- 604
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IBA in minerals research: Progress and prospectsSie, S.H. / Ryan, C.G. / Cousens, D.R. et al. | 1990
- 610
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The dedicated accelerator-based IBA facility AGLAE at the LouvreMenu, M. / Calligaro, T. / Salomon, J. et al. | 1990
- 615
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Detection of surface accumulation of dopants in rapid-thermally-annealed, shallow-implant siliconScanlon, P.J. / Ridgway, M.C. / Brongersma, H.H. et al. | 1990
- 618
-
Characterization of CVD-hydrogenated diamondlike thin films on silicon by EELS, RBS/channeling and nuclear reaction analysisBruley, J. / Madakson, P. / Liu, J.C. et al. | 1990
- 622
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Characterization of porous silicon by NRA, RBS and channelingOrtega, C. / Siejka, J. / Vizkelethy, G. et al. | 1990
- 627
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The analysis of semiconductor thin films with complementary Mössbauer scattering-RBS, channeling and nuclear reactionStedile, F.C. / Mosca, D.H. Jr. / Leite, C.V.Barros et al. | 1990
- 632
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An investigation of laser desorption of Au by PIXE and RBS techniques using a He beamHoudayer, A.J. / Bélanger, P. / Brissaud, I. et al. | 1990
- 637
-
Ion-induced Auger electron studies on Al(110)Wong, L. / Alkemade, P.F.A. / Lennard, W.N. et al. | 1990
- 641
-
Surface analysis by spectroscopy of Auger electrons induced by fast protons at grazing incidencePfandzelter, R. / Lee, J.W. et al. | 1990
- 646
-
Composition profiles due to bombardment-induced segregation in Cu-Ni samples as deduced by auger spectroscopyJiang, S.L. / Oliva, A. / Amoddeo, A. et al. | 1990
- 651
-
Ion bombardment effect on a Nb/Cu interface studied by RBS, NRS, SEM techniquesEl Bouanani, M. / Chevarier, A. / Chevarier, N. et al. | 1990
- 658
-
Formation of buried and surface CoSi2 layers by ion implantationWu, M.F. / Vantomme, A. / Pattyn, H. et al. | 1990
- 664
-
A study of electron beam evaporated SiO2, TiO2, and Al2O2 films using RBS, HFS, and SIMSBaumann, S.M. / Martner, C.C. / Martin, D.W. et al. | 1990
- 669
-
RBS, AES and XRD investigations of high-dose nitrogen-implanted Ti, Cr, Fe, Zr and Nb sheetsFujihana, Takanobu / Okabe, Yoshio / Takahashi, Katsuo et al. | 1990
- 673
-
Stopping power of light ions near the maximumBauer, Peter et al. | 1990
- 684
-
Heavy-ion energy lossSofield, C.J. et al. | 1990
- 689
-
Range parameters of heavy ions implanted into Be filmsGrande, P.L. / Behar, M. / Biersack, J.P. et al. | 1990
- 693
-
The wake potential and dynamic screening in a hydrogen systemGuo, X.S. et al. | 1990
- 698
-
Calculation of the stopping power changes due to the superconducting transition in high-Tc YBa2Cu3O7 superconductorsGuo, X.S. et al. | 1990
- 701
-
Computer simulation of ion beam mixingHan, S.H. / Kulcinski, G.L. / Conrad, J.R. et al. | 1990
- 707
-
Computer simulation of ionized cluster beam bombardment on a carbon substrateYamamura, Yasunori et al. | 1990
- 714
-
Single-event correlation between heavy ions and 252Cf fission fragmentsBrowning, John S. et al. | 1990
- 718
-
Overview of proton beam applications in therapySisterson, J.M. et al. | 1990
- 724
-
A portable system for microdosimetric intercomparisons by task group # 20 of the American Association of Physicists in Medicine (AAPM)Dicello, J.F. / Lyman, J.T. / McDonald, J.C. et al. | 1990
- 731
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Author index| 1990
- ii
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Editorial Board| 1990
- vii
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PrefaceScanlon, P.J. / Ziegler, J.F. et al. | 1990