APPLIED SURFACE SCIENCE
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Characterization of initial one monolayer growth of Ge on Si(1 0 0) and Si on Ge(1 0 0)Ikeda, Keiji et al. | 2001
- 6
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Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(0 0 1) substratesRahman, M.M. et al. | 2001
- 12
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Low-temperature silicon nitride for thin-film electronics on polyimide foil substratesGleskova, H. et al. | 2001
- 17
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Self-assembled monolayers in the context of epitaxial film growthDoudevski, Ivo et al. | 2001
- 27
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Ultra-thin epitaxial Al and Cu films on CaF2-Si(1 1 1)Shusterman, Y.V. et al. | 2001
- 33
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Decay of silicon mounds: scaling laws and description with continuum step parametersIchimiya, A. et al. | 2001
- 36
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Finite temperature simulation of ad-dimer diffusion between dimer row and trough on Si(001)Fu, Chu-Chun et al. | 2001
- 43
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Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxyTsukidate, Y. et al. | 2001
- 49
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Influence of the electrochemical potential on energy landscapes near step- and island-edges: Ag(100) and Ag(111)Haftel, Michael I. et al. | 2001
- 55
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Kinetic surface patterning in two-particle models of epitaxial growthPimpinelli, Alberto et al. | 2001
- 62
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Terrace-width distributions on vicinal surfaces: generalized Wigner surmise and extraction of step-step repulsionsEinstein, T.L. et al. | 2001
- 69
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Defect controlled diffusion in the epitaxial growth of germanium on Si(1 0 0)Berrie, Cindy L. et al. | 2001
- 77
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Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 x 7 substrateMasuda, Katsuyuki et al. | 2001
- 83
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Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electronsPronin, I.I. et al. | 2001
- 90
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Initial growth of titanium germanosilicide on Ge-Si(1 1 1)Yanagawa, T. et al. | 2001
- 96
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b-FeSi2-base MIS diodes fabricated by sputtering methodEhara, Takashi et al. | 2001
- 101
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Photoemission spectroscopy study of the charge accumulation at the K3Sb:Cs surfaceEttema, A.R.H.F. et al. | 2001
- 105
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Thermodynamic properties of alkali-chloride filmsKawano, H. et al. | 2001
- 111
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Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2Tarre, A. et al. | 2001
- 117
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The preparation of the Agx (As0.33S0.67)100-x amorphous films by optically-induced solid state reaction and the films propertiesWágner, T. et al. | 2001
- 123
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Breakdown of the bi-dimensional symmetry in bct Fe layers by epitaxy on Co(1120) surfaceValeri, S. et al. | 2001
- 129
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Electromigration of single-layer clustersPierre-Louis, O. et al. | 2001
- 134
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Dendrimer-mediated growth of very flat ultrathin Au filmsRar, A. et al. | 2001
- 140
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Kinetic surface structuring during homoepitaxy of GaAs (110): a model studyVidecoq, A. et al. | 2001
- 146
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Unusual growth phenomena of group III and group V elements on Si(1 1 1) and Ge(1 1 1) surfacesVitali, L. et al. | 2001
- 157
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Initial stages of porous Si formation on Si surfaces investigated by infrared spectroscopyKimura, Yasuo et al. | 2001
- 163
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Realization of ultrahigh-vacuum-compatible defect-free hydrogen terminated silicon surfaces with the use of a UHV contactless capacitance-voltage methodYoshida, Toshiyuki et al. | 2001
- 169
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CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopyWagner, V. et al. | 2001
- 175
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Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(1 0 0) and (1 1 1)Alperovich, V.L. et al. | 2001
- 181
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Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical processSato, Taketomo et al. | 2001
- 187
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Sb adsorption on Si(1 1 1)-In(4 x 1) surface phaseRao, B.V. et al. | 2001
- 195
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Correlated surface bands of the prototypical interface Sn-Si(1 1 1)-a-Charrier, A. et al. | 2001
- 201
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Nature of the (bent radical)3a to 3 x 3 reversible phase transition at low temperature in Sn-Ge (111)Le Lay, G. et al. | 2001
- 207
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Electronic structure of carbolite filmsIonov, A.M. et al. | 2001
- 212
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Theory of surface electromigration on heterogeneous metal surfacesRous, P.J. et al. | 2001
- 218
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Adsorption and decomposition of t-butylphosphine (TBP) on a GaP(0 0 1)-(2 x 1) surface studied by LEED, HREELS, and TPDFukuda, Y. et al. | 2001
- 223
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In situ Hall measurements of Si(1 1 1)-Cr, Si(1 1 1)-Fe and Si(1 1 1)Mg disordered systems at submonolayer coveragesGalkin, N.G. et al. | 2001
- 230
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Conductivity mechanisms in the ordered surface phases and two-dimensional monosilicides of Cr and Fe on Si(1 1 1)Galkin, N.G. et al. | 2001
- 237
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Surface electronic structure of the (bent radical)3 x (bent radical)3, (bent radical)39 x (bent radical)39 and 6 x 6 surfaces of Ag-Ge(111): observation of a metal to semiconductor transitionZhang, H.M. et al. | 2001
- 243
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Photoluminescence emission (1.3-1.4 (micro)m) from quantum dots heterostructures based on GaAsEgorov, V.A. et al. | 2001
- 249
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Photoemission study of Mg-PTCDA-Se-GaAs Schottky contactsPark, S. et al. | 2001
- 255
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Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductorsKasai, Seiya et al. | 2001
- 260
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Surface studies of single-crystalline refractory metal low-dimensional structuresBozhko, S.I. et al. | 2001
- 265
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Changes in electron-phonon coupling across a bulk phase transition in copolymer films of vinylidene fluoride (70%) with trifluoroethylene (30%)Borca, C.N. et al. | 2001
- 270
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Optical characterization of TiN-SiO2(1000 nm)-Si system by spectroscopic ellipsometry and reflectometryPostava, K. et al. | 2001
- 276
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Spectroellipsometric characterization of materials for multilayer coatingsPostava, K. et al. | 2001
- 281
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Interface magnetometry in a (Fe6°A-Ni24°A)10 multilayerCapelli, R. et al. | 2001
- 288
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Momentum dependence of the surface potential barrier for above-barrier electronsRead, M.N. et al. | 2001
- 294
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Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopyZhang, B.Y. et al. | 2001
- 299
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Transport, optical and thermoelectrical properties of Cr and Fe disilicides and their alloys on Si(1 1 1)Galkin, N.G. et al. | 2001
- 306
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LT-STM-STS observations on electrical field etched surfaces of YBa2Cu3O7 - d single crystalMurakami, Hironaru et al. | 2001
- 312
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Grain boundary diffusion in thin films under stress fieldsOstrovsky, Anatoly S. et al. | 2001
- 319
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An experimental study of poly(9,9-dioctyl-fluorene) and its interfaces with Al, LiF and CsFGreczynski, G. et al. | 2001
- 326
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Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus siliconKampen, T.U. et al. | 2001
- 332
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On the coexistence of different polymorphs in organic epitaxy: a and b phase of PTCDA on Ag(1 1 1)Krause, B. et al. | 2001
- 337
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Adsorbed organic monolayers on crystalline substrate: the example of 8CB on MoS2Lacaze, E. et al. | 2001
- 344
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Photoenhanced current in thin organic layersGodlewski, J. et al. | 2001
- 351
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ToF-SIMS study of organosilane self-assembly on aluminum surfacesHoussiau, L. et al. | 2001
- 357
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XPS measurements on l-cysteine and 1-octadecanethiol self-assembled films: a comparative studyCavalleri, O. et al. | 2001
- 363
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Crystallinity of PTCDA films on silicon derived via optical spectroscopic measurementsSalvan, G. et al. | 2001
- 369
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Optical and electroemission properties of thin films of supermolecular anthracene-based rotaxanesGadret, G. et al. | 2001
- 374
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In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam depositionEvans, D.A. et al. | 2001
- 379
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Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayerBollani, Monica et al. | 2001
- 386
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Ferroelectric behavior in solvent cast poly(vinylidene fluoride-hexafluoropropylene) copolymer filmsJayasuriya, Ambalangodage C. et al. | 2001
- 391
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Contact resonance imaging - a simple approach to improve the resolution of AFM for biological and polymeric materialsWadu-Mesthrige, Kapila et al. | 2001
- 399
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TOF-SIMS study of alkanethiol adsorption and ordering on goldHoussiau, L. et al. | 2001
- 407
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Electronic structures of TPD-metal interfaces studied by photoemission and Kelvin probe methodIto, Eisuke et al. | 2001
- 412
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Photoemission study of energy alignment at the metal-Alq3 interfacesYan, Li et al. | 2001
- 419
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Key issues for the growth of high quality (Al,Ga)N-GaN and GaN-(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxyBrandt, O. et al. | 2001
- 428
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The electrical properties of MIS capacitors with ALN gate dielectricsAdam, T. et al. | 2001
- 436
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Structure and optical properties of (0 0 1)GaAs surfaces nitrided in plasma-assisted NH3 gasShimaoka, G. et al. | 2001
- 442
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Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfacesBrillson, L.J. et al. | 2001
- 450
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Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2-Ar plasmasHsieh, J.T. et al. | 2001
- 456
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Characterization of the density, structure and chemical states of carbon nitride filmsXu, Wentao et al. | 2001
- 462
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Excimer laser doping techniques for II-VI semiconductorsHatanaka, Y. et al. | 2001
- 468
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The electrical and optical properties of thin film diamond implanted with siliconRoe, K.J. et al. | 2001
- 474
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Photoemission properties and surface structures of homoepitaxially grown CVD diamond(1 0 0) surfacesMurakami, H. et al. | 2001
- 480
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Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin filmsDimitrova, V.I. et al. | 2001
- 484
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Low temperature deposition of SiC thin films on polymer surface by plasma CVDAnma, H. et al. | 2001
- 490
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ScN-GaN heterojunctions: fabrication and characterizationPerjeru, F. et al. | 2001
- 495
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Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilaneYasui, Kanji et al. | 2001
- 499
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Structure and optical properties of ScN thin filmsBai, Xuewen et al. | 2001
- 505
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The electrical characteristics of silicon carbide alloyed with germaniumKatulka, G. et al. | 2001
- 512
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Investigation of metal contacts on ScNOrtiz-Libreros, M.I. et al. | 2001
- 517
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Properties of thin MgO films grown on single-crystalline CVD diamondLee, S.M. et al. | 2001
- 525
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Microstructural properties of amorphous carbon nitride films synthesised by dc magnetron sputteringFitzgerald, A.G. et al. | 2001
- 531
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Auger electron spectroscopy, ellipsometry and photoluminescence investigations of Zn1-XBeXSe alloysBukaluk, A. et al. | 2001
- 538
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Screen printed CdSxTe1-x films, structural and optical characterizationSantana-Aranda, M.A. et al. | 2001
- 543
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Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometryPostava, K. et al. | 2001
- 549
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XPS analysis of p-type Cu-doped CdS thin filmsAbe, Takashi et al. | 2001
- 555
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Optical characterization of chalcogenide thin filmsFranta, Daniel et al. | 2001
- 562
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Photoluminescence in cubic and hexagonal CdS filmsLozada-Morales, R. et al. | 2001
- 567
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The depth of depletion layer and the height of energy barrier on ZnO under hydrogenHan, Chong Soo et al. | 2001
- 574
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Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiNxOy films as a function of the growth temperature: a percolation approachFabreguette, F. et al. | 2001
- 579
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Surface films on HgCdTe and CdTe etched in ferricyanide solutionErné, B.H. et al. | 2001
- 585
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Characterization of the surface layer of GaAs nitrided by high-density plasmaYasui, Kanji et al. | 2001
- 591
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Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanesShinohara, Masanori et al. | 2001
- 597
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Mesoscopic phenomena in nano-porous alumina films: single nano-tunnel junctions connected to Ni-nanowires and carbon nanotubesHaruyama, Junji et al. | 2001
- 606
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Grazing incidence structural characterization of InAs quantum dots on GaAs(0 0 1)Zhang, K. et al. | 2001
- 613
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Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafersTabe, Michiharu et al. | 2001
- 619
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MBE growth of calcium and cadmium fluoride nanostructures on siliconSokolov, N.S. et al. | 2001
- 629
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Raman scattering study of Ge dot superlatticesMilekhin, A. et al. | 2001
- 636
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Nanofabrication using computer-assisted design and automated vector-scanning probe lithographyCruchon-Dupeyrat, S. et al. | 2001
- 643
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Growth of CdTe islands on ZnTe by hot-wall epitaxyKuwabara, H. et al. | 2001
- 649
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Characterization of AFM tips using nanograftingXu, Song et al. | 2001
- 656
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UHV aluminium oxide on silicon substrates: electron spectroscopies analysis and electrical measurementsGruzza, B. et al. | 2001
- 663
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Unoccupied states evolution with oxidation of ultrathin Mg, Zn and Cd layers on SrTiO3(100) surfacesMøller, P.J. et al. | 2001
- 670
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Absolute determination of the stoichiometry of ultra-thin oxide films as a function of thickness: antimony oxide on goldStefanov, K.G. et al. | 2001
- 674
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MoOx (x<=2) ultrathin film growth from reactions between metallic molybdenum and TiO2 surfacesBlondeau-Patissier, V. et al. | 2001
- 678
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Approaching the limit for quantitative SIMS measurement of ultra-thin nitrided SiO2 filmsNovak, Steven W. et al. | 2001
- 685
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Structural and in depth characterization of newly designed conducting-insulating TiNxOy-TiO2 multilayers obtained by one step LP-MOCVD growthFabreguette, F. et al. | 2001
- 691
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Rheed in-plane rocking curve analysis of biaxially-textured polycrystalline MgO films on amorphous substrates grown by ion beam-assisted depositionBrewer, R.T. et al. | 2001
- 697
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Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma sourceNakamura, Masatoshi et al. | 2001
- 703
-
An improved three-dimensional model for growth of oxide films induced by laser heatingJiménez Pérez, J.L. et al. | 2001
- 709
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One-dimensional analytical model for oxide thin film growth on Ti metal layers during laser heating in airJiménez Pérez, J.L. et al. | 2001
- 715
-
Silicon oxide in Si---Si bonded wafersHimcinschi, C. et al. | 2001
- 721
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Ga2O3 thin film for oxygen sensor at high temperatureOgita, M. et al. | 2001
- 726
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Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devicesMur, P. et al. | 2001
- 734
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Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysisGérard, I. et al. | 2001
- 740
-
Impedance spectroscopic analysis of forward biased metal oxide semiconductor tunnel diodes (MOSTD)Matsumura, M. et al. | 2001
- 746
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Development of a sub-picoampere scanning tunneling microscope for oxide surfacesUmbach, Christopher C. et al. | 2001
- 753
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Amorphous silicon crystallization and polysilicon thin film transistors on SiO2 passivated steel foil substratesWu, Ming et al. | 2001
- 759
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Composition-related effects of microstructure on the ferroelectric behavior of SBT thin filmsTejedor, P. et al. | 2001
- 764
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Combined photoelectron and metastable atom electron spectroscopy study of n-doped oligophenylene thin filmsKoch, N. et al. | 2001
- 769
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On the origin of resonance features in reflectance difference data of siliconHingerl, K. et al. | 2001
- 777
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Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopiesChiarotti, G. et al. | 2001
- 783
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Chemical mapping of patterned polymer photoresists by near-field infrared microscopyDragnea, Bogdan et al. | 2001
- 790
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Auger electron spectroscopy investigations of the effect of degradation of depth resolution and its influence on the interdiffusion data in thin film Au-Ag, Cu-Ag, Pd-Au and Pd-Cu multilayer structuresBukaluk, A. et al. | 2001
- 797
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Oxygen adsorption on a Fe-MgO(1 0 0) film: a surface magnetism investigationMoroni, R. et al. | 2001
- 803
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AUTHOR INDEX| 2001
- 813
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KEYWORD INDEX| 2001
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PrefaceBernasek, S. et al. | 2001