Vacuum
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Table of contents
- 519
-
Technology and application of thin silicide films in semiconductor devices and integrated microcircuitsKoeshko, V.M. / Belitsky, V.F. / Dolquij, N.A. et al. | 1991
- 525
-
Low energy ion beam annealing of amorphised layers in SiZeroval, B. / Carter, G. et al. | 1991
- 533
-
Depth profiles of boron in IPI amorphous silicon films with (p, alpha) resonance reactionChanggeng, L. / Zhihao, Z. / Yonggiang, W. et al. | 1991
- 537
-
Angular distribution and escape probability of sputtered atomsPerez-Martin, A.M.C. / Jimenez-Rodriugez, J.J. et al. | 1991
- 543
-
Effect of nitrogen ion bombardment on copper-gold interfaceBhattacharyya, V.P. / Prabhawalkar, P.D. et al. | 1991
- 555
-
Calculation of capture coefficients for a cylindrical cryopumpLee, J.W. / Lee, Y.K. et al. | 1991
- 561
-
7134. Vacuum system design and fabrication of electron storage rings| 1991
- 561
-
7132. Room temperature pumping characteristics for gas mixtures of a ZrAl nonevaporable getter| 1991
- 561
-
7130. High throughout tandem turbonuclear pump for extreme high vacuum| 1991
- 561
-
7131. Two-stage vacuum pumps for high working pressures and high water vapor tolerances| 1991
- 561
-
7133. Vacuum pumping for inertial-confinement-fusion reactors| 1991
- 562
-
7136. Leak detection in 10−13 torr aluminum vacuum systems| 1991
- 562
-
7138. Improved technique for measuring the vapor pressure of vacuum-compatible fluids| 1991
- 562
-
7140. Electron-stimulated desorption of fluorine from barium fluoride films deposited on silicon substrates| 1991
- 562
-
7139. Sensitivity variation of Bayard-Alpert gauges with and without closed grids from 10−4 to 1 Pa| 1991
- 562
-
7141. Low outgassing and anticorrosive metal surface treatment for uhv equipment| 1991
- 562
-
7137. Residual gas analysis: past, present and future| 1991
- 562
-
7142. The adsorption and decomposition of ethylene on Pt(210), (1×1)Pt(110) and (2×1)Pt(110)| 1991
- 562
-
7135. Fast partial and total pressure measurements during tokamak discharges| 1991
- 563
-
7143. Thermal desorption from coexisting phases: H/Mo (100)| 1991
- 563
-
7146. Oxygen adsorption on the surface of CdSe(x)Te(1−x) thin films| 1991
- 563
-
7149. Real-time monitoring of low-temperature hydrogen plasma pasivation of GaAs| 1991
- 563
-
7144. Photon-stimulated desorption yields from stainless steel and copper-plated beam tubes with various pretreatments| 1991
- 563
-
7145. Growth and morphology kinetics of adsorbate structures on silicon| 1991
- 563
-
7148. The formation of water aerosols during pump-down of vacuum process tools| 1991
- 563
-
7147. Surface electronic structure of clean and hydrogen chemisorbed Ge(100)2×1 studied by angle-resolved photoemission| 1991
- 563
-
7150. Chemical cleaning of aluminum alloy surfaces for use as vacuum material in synchrotron light sources| 1991
- 564
-
7157. Physical vapor deposition equipment evaluation and characterization using statistical methods| 1991
- 564
-
7152. Factors affecting cryopump base pressure| 1991
- 564
-
7156. Laser-induced vaporization of metal as a Riemann problem| 1991
- 564
-
7153. Vacuum vessel system design for the compact ignition tokamak| 1991
- 564
-
7155. Tin selenide films grown by hot wall epitaxy| 1991
- 564
-
7154. Optical absorption of as-deposited indium selenide thin films| 1991
- 564
-
7151. Development of an aluminum alloy valve for an extremely high vacuum system| 1991
- 565
-
7162. Possibilities and limitations of the films thickness determination method based on white light interference| 1991
- 565
-
7166. Modelling and ellipsometry of the nucleation and growth of zinc sulphide films in ultra high vacuum| 1991
- 565
-
7158. The effects of cluster size-dependent aggregation on thin film formation| 1991
- 565
-
7163. Island growth and coarsening in thin films—conservative and nonconservative systems| 1991
- 565
-
7165. Indium tin oxide films by sequential evaporation| 1991
- 565
-
7159. A further study of the state of residual stress in TiN films made by physical vapor deposition methods| 1991
- 565
-
7160. Microstructures and magnetic properties of Co/Cu layered films prepared by evaporation| 1991
- 565
-
7161. Internal stress of vapour-deposited aluminum films: effect of O2 and water vapour present during film deposition| 1991
- 565
-
7164. Thin film deposition by excimer laser evaporation| 1991
- 565
-
7167. Cathodic are evaporation of graphite with controlled cathode spot position| 1991
- 566
-
7170. Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique| 1991
- 566
-
7172. Considerations on the design of a dc sputtering system concerning its application to Ta and Si deposition| 1991
- 566
-
7173. Mechanical and electrical properties of rf sputtered LaB6 thin films on glass substrates| 1991
- 566
-
7168. Nucleation and growth of crystallites in amorphous antimony layers on as-deposited ultrathin sublayers of metal: copper, silver, gold, tin and lead| 1991
- 566
-
7169. Trnasport properties of flash-evaporated (Bi1−xSbx)2Te3 films I: optimization of films properties| 1991
- 566
-
7171. Characterization of Ta thin films obtained by dc sputtering| 1991
- 567
-
7177. Superconducting thin films of n-type copper oxide prepared by rf magnetron sputtering| 1991
- 567
-
7178. Large-area industrial vacuum coating in the 1990s| 1991
- 567
-
7182. Properties of W-N and Mo-N films prepared by reactive sputtering| 1991
- 567
-
7179. A comparison of SiO2 planarization layers by hallow cathode enhanced direct current reactive magnetron sputtering and radio frequency magnetron sputtering| 1991
- 567
-
7176. Computer experiments of initial growth kinetics of vacuum-deposited thin films| 1991
- 567
-
7175. Preparation of AIN films by planar magnetron sputtering system with facing two targets| 1991
- 567
-
7180. Beam parameter effects on magnetic properties of sputtered amorphous Fe40Ni40B15Si5 and Fe40Co40B15Si5 films| 1991
- 567
-
7174. Sputtered magnetic films for rigid disk production| 1991
- 567
-
7181. Characterization of sputter-deposited ZrBxOy films| 1991
- 568
-
7191. Media noise in periodic multilayered magnetic films with perpendicular anisotropy| 1991
- 568
-
7188. High-rate sputter deposition of SiO2 and TiO2 films for optical applications| 1991
- 568
-
7189. Evaluation of the stopping depth of nonradiative recombination centers in Al0.5Ga0.5As by Ar+ ion beam sputtering by photoluminescence measurements| 1991
- 568
-
7185. Simulation and measurement of density variation in Mo films sputter deposited over oxide steps| 1991
- 568
-
7187. rf diode sputtering| 1991
- 568
-
7184. Characterization of radio frequency deposited thin carbon films| 1991
- 568
-
7186. Dielectric properties of rf-sputtered Y2O3 thin films| 1991
- 568
-
7183. Low resistivity indium-tin oxide transparent conductive films. I. Effect of introducing H2O gas or H2 gas during direct current magnetron sputtering| 1991
- 568
-
7190. Surface-defect formation in graphite targets during magnetron sputtering| 1991
- 569
-
7197. NiAl2O3 selective cermet coatings for photothermal conversion up to 500°C| 1991
- 569
-
7194. Film thickness distribution control with off-axis circular magnetron sources onto rotating substrate holders: comparison of computer simulation with pratical results| 1991
- 569
-
7195. Particulates in aluminum sputtering discharges| 1991
- 569
-
7192. Velocity dependence of ionization probability of Be, Cu, Ag, W, Pb and Sn atoms sputtered by 5.5 ke V Ar+ ions| 1991
- 569
-
7196. Composition and morphology of MoSe2 thin films| 1991
- 569
-
7199. dc reactive magnetron sputering of silicon in hydrogen at low substanstrate temperatures| 1991
- 569
-
7198. Characteristic features of laser-produced plasmas for thin film deposition| 1991
- 569
-
7193. Tribological performance and deformation of sputter-deposited MoS2 solid lubricant films during sliding wear and indentation contact| 1991
- 570
-
7205. Stress measurements of Pt/Ti/InP and Pt/Ti/SiO2/InP systems: insitu measurements through sintering and after rapid thermal processing| 1991
- 570
-
7204. Adhesion enhancement of Ni films on polymide using ion processing. III: Si intermediate layers and 84Kr+ implantation| 1991
- 570
-
7200. Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films| 1991
- 570
-
7202. Adhesion enhancement of Ni fims on plyimide using ion processing. I. 28Si+ implantation| 1991
- 570
-
7201. Effects of substituted elements into the Cr layer on a CoNiCr/Cr sputtered hard disk| 1991
- 570
-
7203. Adhesion enhancement of Ni films on polymide using ion processing. II. 84Kr+ implantation| 1991
- 571
-
7209. Ion-assisting magnetron sources: principles and uses| 1991
- 571
-
7211. Deposition of Cu film on SiO2 using a partially ionized beam| 1991
- 571
-
7213. The role of ion-assisted deposition in the formation of diamond-like carbon films| 1991
- 571
-
7207. Thin film preparations by low energy ion beams| 1991
- 571
-
7206. Patterning with the use of ion-assisted selective deposition| 1991
- 571
-
7210. Microstructural variations in aluminum oxide coatings deposited using a dual beam ion system| 1991
- 571
-
7208. Transport processes in plasma assisted deposition of superconducting thin films| 1991
- 571
-
7212. Formation of silicon-based heterostructures in multichamber integrated-processing thin-film deposition systems| 1991
- 572
-
7217. Plasma deposited silicon nitride encapsulant for rapid thermal annealing of Si-implanted GaAs| 1991
- 572
-
7220. Nitridation induced on metal surface by Ar+ -ion impact under N2 atmosphere| 1991
- 572
-
7221. Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystallization silicon gate structure by heat treatment in a hydrogen-containing atmosphere| 1991
- 572
-
7215. The dissociation of transition metal oxides under exposure to low energy ions| 1991
- 572
-
7219. Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating method| 1991
- 572
-
7216. Oxidation kinetics of plasma-enhanced chemical deposition silicon nitride films deposited SiH4/NH3/NF3/N2 mixtures| 1991
- 572
-
7214. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition| 1991
- 572
-
7218. The deposition of diamond films by filament techniques| 1991
- 573
-
7222. Texture formation in polycrstalline diamond films| 1991
- 573
-
7226. Optical studies of gold-carbon plasma deposition| 1991
- 573
-
7225. Polymer-like and hard amorphous hydrogenated carbon films prepared in an inductively coupled rf glow discharge| 1991
- 573
-
7223. The effects of rapid thermal annealing on the properties of plasma enhanced chemically vapor-deposited silicon nitride| 1991
- 573
-
7224. Growth and characterization of tin oxide films prepared by chemical vapour deposition| 1991
- 573
-
7227. Nitridation of SiO2 thin films at low ammonia pressure: composition and electrical properties| 1991
- 573
-
7229. Properties of aluminium oxide films prepared by plasma-enhanced metal-organic chemical vapour deposition| 1991
- 573
-
7228. Amorphous silicon nitride thin films deposited using dc discharge and post-discharge devices| 1991
- 574
-
7231. Deposition of diamond-like films by electron cyclotron resonance microwave plasmas| 1991
- 574
-
7234. Electrostatic beam blanking systems| 1991
- 574
-
7232. Structure and property correlation of plasma source ion implanted layers in Monel K-500 alloy| 1991
- 574
-
7235. Ion-surface interaction system (ISIA) for the study of redeposited materials: an application of decelerated ion beams with quartz-crystal microbalances| 1991
- 574
-
7233. Experimental study of the response of a liquid metal field ion source to short hV-extraction pulses| 1991
- 574
-
7230. Deposition and properties of germanium-carbon alloy films produced from tetraethylgermanium in an rf discharge| 1991
- 574
-
7236. A design of large ion gun employing liquid metal ion source| 1991
- 575
-
7243. Witness plate electron beam diagnostic for electron cyclotron maser research| 1991
- 575
-
7239. Behavior of Ar plasmas formed in a mirror field electron cyclotron resonance microwave ion source| 1991
- 575
-
7237. Effect of primary electron distribution on ion species yield in an ion source| 1991
- 575
-
7241. Potential applications of an electron cyclotron resonance multicusp plasma source| 1991
- 575
-
7242. Improved pulsed laser vaporization source for production of intense beams of neutral and ionized clusters| 1991
- 575
-
7240. Study of the ionized cluster beam technique| 1991
- 575
-
7244. Experimental evaluation of an electron-beam wobbling method with a compact storage ring| 1991
- 575
-
7238. Method for determination of neutral atomic oxygen flux| 1991
- 576
-
7252. Deep levels in undoped bulk InP after rapid thermal annealing| 1991
- 576
-
7253. Radiation damage annealing models in glass detectors| 1991
- 576
-
7246. Identification and purification of multicharged silicon beams| 1991
- 576
-
7251. Gold implantation in n-type silicon: enthropy factor and diffusion studies| 1991
- 576
-
7254. One-step surface implantation and reaction by laser irradiation of multistructures deposited on Si and Ge samples| 1991
- 576
-
7245. A low cost ion beam profile| 1991
- 576
-
7249. Surface regrowth of implantation damaged Ge(111)| 1991
- 576
-
7248. Silicon-on-insulator: materials aspects and technological applications| 1991
- 576
-
7250. Changes in hydrophobic properties of glass surfaces by ion implantation| 1991
- 576
-
7247. Ion production from LiF-coated field emitter tips| 1991
- 577
-
7255. Electrical characteristics of SnO2-based thick film resistors loaded with SnCl2| 1991
- 577
-
7257. Vacancy-type defects in Si+-implanted GaAs and its effects on electrical activation by rapid thermal annealing| 1991
- 577
-
7256. Representation of ion implantation profiles by Pearson frequency distribution curves| 1991
- 577
-
7261. A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF+2| 1991
- 577
-
7260. The influence of low copper doping concentrations on the recrystallization process in and the electrical properties of germanium in Ge:Cu thin film transistors| 1991
- 577
-
7259. Temperature and energy dependence of ion-beam synthesis of epitaxial Si/CoSi2/Si heterstructures| 1991
- 577
-
7262. Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology| 1991
- 577
-
7258. WSiN/SiO2, capped annealing for Si-implanted GaAs| 1991
- 578
-
7267. Helium implantation effects in hard hydrogenated carbon layers| 1991
- 578
-
7263. A study of Si implanted with oxygen using spectroscopic ellipsometry| 1991
- 578
-
7269. Direct observation of cascade defects by in-situ heavy ion/electron microscope interface| 1991
- 578
-
7264. Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepetaxial structure research: a review| 1991
- 578
-
7265. Oxygen enhancement induced by ionic implantation in scandium dipthalocyanine thin films| 1991
- 578
-
7266. Epitaxy of silver films deposited onto NaCl(100) substrates during ion bombardment| 1991
- 578
-
7268. Ion irradiation damage in noncrystalline FeCo thin films| 1991
- 578
-
7270. Computer simulation of high energy displacement cascades| 1991
- 579
-
7274. Wear resistance of ion-implanted, chemically vapor-deposited nickel die inserts| 1991
- 579
-
7273. Temperature dependence of 4He/3He exchange in Ni| 1991
- 579
-
7278. Structural and magnetic characteristics of Eu/Mn and Eu/Yb superlattices prepared by the MBE technique| 1991
- 579
-
7272. Microstructural evolution in metals during helium and proton irradiations| 1991
- 579
-
7271. Damage production and annealing in ion-irradiated fcc metals| 1991
- 579
-
7275. Development of multispecimen holder for ion irradiation experiments| 1991
- 579
-
7277. Deposition cluster and cluster tool equipment trends in Japan| 1991
- 579
-
7276. Point defect defect trapping in ion implanted Al(Cu)| 1991
- 580
-
7281. Atomic layer growth of GaAs by molecular beam epitaxy using desorption of excess Ga atoms| 1991
- 580
-
7280. GaAs MBE growth under Ga-rich conditions studied by RHEED intensity oscillations| 1991
- 580
-
7286. Molecular-beam study of gas-surface chemistry in the ion-assisted etching of silicon with atomic and molecular hydrogen and chlorine| 1991
- 580
-
7284. Delta doping III–V compound semiconductors: fundamental and device applications| 1991
- 580
-
7279. Observation of electromigration effect upon Si-MBE growth on Si(001) surface| 1991
- 580
-
7285. Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4| 1991
- 580
-
7283. Epitaxial growth metals: from monolayer to superlattice| 1991
- 580
-
7282. Preparation of zinc sulphoselenide alloys using MBE| 1991
- 581
-
7292. Molecular beam epitaxial growth of GaAs on silicon on sapphire incorporating a low temperature buffer| 1991
- 581
-
7293. Molecular beam epitaxial growth of high-quality GaAs on Si using a high-temperature in situ annealing process| 1991
- 581
-
7289. Study of isoelectronic In doping in molecular beam epitaxy grown GaAs thyristors| 1991
- 581
-
7290. Growth of high quality AlGaAs/GaAs heterostructures by gas source molecular-beam epitaxy| 1991
- 581
-
7291. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy| 1991
- 581
-
7295. Molecular beam epitaxy growth of ZnSe using a cracked selenium source| 1991
- 581
-
7288. Construction and operation of an ultrahigh vacuum chemical vapor deposition epitaxial reactor for growth of GexSi1−x| 1991
- 581
-
7294. A two-zone molecular-beam epitaxy furnace for evaporation of II–VI materials| 1991
- 581
-
7287. Growth of boron nitride films by gas molecular-beam epitaxy| 1991
- 582
-
7300. Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxy| 1991
- 582
-
7296. Description and applications of graded-thickness growth technique for molecular-beam epitaxy| 1991
- 582
-
7298. Elimination of gallium-source related oval defects in molecular-beam epitaxy of GaAs| 1991
- 582
-
7299. Growth of InxGa1-xAs on patterned GaAs (100) substrates| 1991
- 582
-
7301. Effects of etching with mixture of HCl gas and H2 on the GaAs surface cleaning in molecular-beam epitaxy| 1991
- 582
-
7297. Evaluation of a new high capacity, all-tantalum molecular-beam epitaxy arsenic craker furnace| 1991
- 583
-
7306. A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxy| 1991
- 583
-
7302. Transport properties of InAsxSb1-x(0 ⩽ x ⩽ 0.55) on InP grown by molecular-beam epitaxy| 1991
- 583
-
7309. Thickness dependent migration of Au films| 1991
- 583
-
7308. Lanthanum silicide formation in thin LaSi multilayer films| 1991
- 583
-
7305. Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers| 1991
- 583
-
7310. Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2| 1991
- 583
-
7303. In situ, near epitaxial Al/AlxGa1−xAs Schottky barriers formed by molecular beam epitaxy| 1991
- 583
-
7311. Electronic and atomic structure of a Co silicide-Si contact system| 1991
- 583
-
7304. Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxy| 1991
- 583
-
7307. Interface compound formation in Ni/In thin film couples| 1991
- 584
-
7313. Temperature-dependent effects during Ag deposition on Cu(110)| 1991
- 584
-
7314. A comparison of the reaction of titanium with amorphous and monocrystaline silicon| 1991
- 584
-
7317. Recrystalline and grain growth phenomena in polycrystalline Si/CoSi2 thin-film couples| 1991
- 584
-
7315. A process-related study of the Al/MoSi2Al double-level metallization system| 1991
- 584
-
7312. Growth of CoSi2 on Si(001): structure, defects, and resistivity| 1991
- 584
-
7316. On the phase formation during ion-beam mixing| 1991
- 585
-
7322. Interdiffusion and resistivity of Cu/Au, Cu/Co, Co/Au, and Cu/Co/Au thin films at 25-550°C| 1991
- 585
-
7324. Interfacial reactions in AgZn thin film couples| 1991
- 585
-
7319. formation of continous CoSi2 layers by high Co dose implantation into Si(100)| 1991
- 585
-
7321. Structure and magnetic properties of Co/Al multilayered films| 1991
- 585
-
7325. Oxygen impurity effects on the formation of thin titanium silicide films by rapid thermal annealing| 1991
- 585
-
7323. Experimental verification of temperature calculations in multilayers used for Co2 laser recrystallization of silicon-on-insulator films| 1991
- 585
-
7318. Influence of elastic stress on the growth kinetics of planar thin-film binary diffusion couples| 1991
- 585
-
7320. Epitaxial relations between in situ superconducting YBa2Cu3O7−x thin films and BaTiO3/MgAl2O4/Si substrates| 1991
- 586
-
7333. Isotopic study of oxygen diffusion in silicon dioxide thin films| 1991
- 586
-
7326. Reaction between Cu and PtSi with Cr, Ti, W, and C barrier layers| 1991
- 586
-
7327. Effect of laser-irradiation on structural and electrical properties of CdS thin films| 1991
- 586
-
7331. The influence of oxygen on cobalt silicide formation| 1991
- 586
-
7332. Phase formation sequence for the reaction of multilayer thin films of Nb/Al| 1991
- 586
-
7329. Effect of third-element additions on properties of Co-Cr-based films| 1991
- 586
-
7328. Solid phase reaction of molybdenum-nickel alloy thin films with silicon| 1991
- 586
-
7330. Formation and structure of epitaxial ruthenium silicides on (111) Si| 1991
- 587
-
7335. Interdiffusion and reaction in (CrSi)/Al and (CrSiO)/Al thin film systems| 1991
- 587
-
7340. Evaluation of dry etch processes with thermal waves| 1991
- 587
-
7337. Interfacial reaction of Ta- and Si-rich tantalum silicides with Si substrate| 1991
- 587
-
7341. Pattern marking on synthetic diamond film by Penning discharge sputtering| 1991
- 587
-
7342. Influence of the surface electron processes on the kinetics of silicon etching by flourine atoms| 1991
- 587
-
7338. Growth mechanism and morphology of semiconducting FeSi2 films| 1991
- 587
-
7334. Thermal conductivity and diffusivity of a thin film SiO2Si3N4 sandwich system| 1991
- 587
-
7339. Improvement of oxide quality by rapid thermal annealing| 1991
- 587
-
7336. Study of CoCr films for perpendicular magnetic recording using nuclear magnetic resonance| 1991
- 588
-
7348. Reactive-ion-etch profile evolution determined by a Monte Carlo microtopography model| 1991
- 588
-
7352. Polymer diffusion as a probe of damage in ion or plasma etching| 1991
- 588
-
7349. Etching procedures of GaAs: cathodoluminescence study of the induced damages and of the recovering techniques| 1991
- 588
-
7351. Interplay of erosion and redeposition processes in seed cone formation| 1991
- 588
-
7344. Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections| 1991
- 588
-
7350. Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges| 1991
- 588
-
7345. The importance of free radical recombination reactions in CF4/O2 plasma etching of silicon| 1991
- 588
-
7346. Plasma-material interactions| 1991
- 588
-
7343. Evidence of SiOx suboxides at Ar ion etched silica surfaces| 1991
- 588
-
7347. Reactive ion etching of silicon using bromine containing plasmas| 1991
- 589
-
7355. A model for simultaneous reactive sputtering, etching, and chemical vapor deposition| 1991
- 589
-
7359. The contracted positive column in electronegative gases| 1991
- 589
-
7358. Local concentration of two-dimensionally perturbed ion-acoustic pulses| 1991
- 589
-
7357. Ion temperature effect on the propagation of ion acoustic solitary waves in a relativistic magnetoplasma| 1991
- 589
-
7353. Native oxide removal during chlorine reactive ion etching of silicon in an rf diode reactor| 1991
- 589
-
7360. A fundamental plasma based model for energy transfer in laser material processing| 1991
- 589
-
7361. Electrical potentials in rf discharges| 1991
- 589
-
7354. Near-surface damage and contamination of silicon following electron cyclotron resonance etching| 1991
- 589
-
7356. Monte Carlo simulation of energy dissipation in electron beam lithography including secondary electron generation| 1991
- 590
-
7370. Electron swarm experiments in fluids-signal waveform analysis| 1991
- 590
-
7364. Present status of the European Community's fusion materials programme| 1991
- 590
-
7363. Control of plasma parameters and electric fields in a microwave-rf hybrid plasma| 1991
- 590
-
7365. Electron and ion transport in magnetron plasmas| 1991
- 590
-
7369. Spectroscopic investigation of energetic atoms in a dc hydrogen glow discharge| 1991
- 590
-
7367. An experimental system for symmetric capacitive rf discharge studies| 1991
- 590
-
7362. Experimental search for ‘cold fusion’ in the deuterium-titanium system| 1991
- 590
-
7366. Thermal equilibrium in a diverted plasma| 1991
- 590
-
7368. Design and use of a gridded probe in a low-pressure rf argon discharge| 1991
- 591
-
7375. Study of ErAs/GaAs strained-layer structures using optical absorption and ion channeling| 1991
- 591
-
7373. Anomalous ion channeling in InGaAs/GaAs strained heterojunction| 1991
- 591
-
7379. External proton beam analysis of organic and inorganic art objects| 1991
- 591
-
7372. Helium-ion damage and nanowire fabrication in GaAs/AlGaAs heterostructures| 1991
- 591
-
7374. Range profile of 50–400 keV mercury ions in cobalt films| 1991
- 591
-
7380. Comparison of ion range distributions obtained by different Monte Carlo codes with different electronic stopping powers| 1991
- 591
-
7371. Depth profile analysis of two element mixtures by Rutherford backscattering spectrometry| 1991
- 591
-
7376. Investigation of the dependence of the secondary processes in channeling on the location of impurity atoms in the near surface layers of single crystals| 1991
- 591
-
7377. Stopping power and energy-loss straggling of slow protons in a strongly coupled degenerate electron gas| 1991
- 591
-
7378. High sensitivity analysis and profiling of oxygen and nitrogen by a (d, pγ)-coincidence technique| 1991
- 592
-
7382. A time-of-fight mass filter for ion and cluster ion photodissociation studies| 1991
- 592
-
7385. Energy and mass-resolved detection of neutral and ion species using modulated-pole quadrupole mass spectroscopy| 1991
- 592
-
7387. An investigation of the roughening of silicon(100) surfaces in Cl2/CCl4 reactive ion etching plasmas by in situ ellipsometry and quadropole mass spectrometry: the role of CCl4| 1991
- 592
-
7381. On the use of H+ and Ar+ ions for high spatial resolution depth profiling| 1991
- 592
-
7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300| 1991
- 592
-
7386. SSIMS study of CO2 adsorption and reactions on clean and oxygen covered Ni(110)| 1991
- 592
-
7383. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using a Cameca IMS-3f| 1991
- 593
-
7388. Anticipated performance of achromatic quadrupole focusing systems when used with liquid metal ions sources| 1991
- 593
-
7390. Time-of-flight mass spectroscopy of ionized cluster beam in film deposition conditions| 1991
- 593
-
7389. Secondary ion desorption from organic films with 6Li ions at energies 0.4–4 MeV/A| 1991
- 593
-
7395. Diffuse intensities in LEED| 1991
- 593
-
7397. In situ low-energy ion scattering analysis of InP surface during molecular-beam epitaxy| 1991
- 593
-
7392. Wavelength effects in the ultraviolet-laser ablation of polycarbonate and poly(α-methylstyrene) examined by time-of-flight mass spectroscopy| 1991
- 593
-
7394. The scattering of low-energy atomic and molecular ions from solid surfaces| 1991
- 593
-
7391. Effect of low energy argon ion irradiation on the secondary electron emission spectrum of highly oriented pyrolytic graphite| 1991
- 593
-
7396. Determination of the surface Debye temperature with LEIS| 1991
- 593
-
7393. Atomic nature of ‘5 × 1’ reconstructed Si(110) as revealed by chemical titration with N2O and O2: AES and LEED results| 1991
- 594
-
7398. Segregation of Ca ions at the MgO(001) surface studied by neutral beam incidence ion scattering spectroscopy| 1991
- 594
-
7401. AES, XPS and SIMs characterization of YBa2Cu3O7 superconducting high Tc thin films| 1991
- 594
-
7399. Epitaxial growth of metals studied with thermal energy atom scattering| 1991
- 594
-
7404. An Auger electron spectroscopy study of the oxidation and mechanical degradation of Ta thin film protected overlayers at microelectronic solid/ liquid interfaces| 1991
- 594
-
7403. Characterization of AuGeNi ohmic contacts on n-GaAs using electrical meaurements, Auger electron spectroscopy and X-ray diffractometry| 1991
- 594
-
7400. Pt and Au films grown on Pd(110): dependence of (1×2) and (1×3) reconstruction on deposition temperature and film thickness| 1991
- 594
-
7402. Growth of ultrathin Au and Ag films on a modified Ru surface| 1991
- 595
-
7410. STM on polycrystalline thin films| 1991
- 595
-
7411. Study of metallic adhesion using scanning tunneling microscopy| 1991
- 595
-
7413. A novel ultralight vacuum scanning tuneling microscope for surface science studies| 1991
- 595
-
7408. Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: the effect of crystalline texture| 1991
- 595
-
7406. Chemisorption of NO on Pd single crystal studied by UPS, AES and XPS| 1991
- 595
-
7409. Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy| 1991
- 595
-
7405. Electron trapping characterization by Auger electron spectroscopy in silicon oxynitride thin film| 1991
- 595
-
7407. Auger electron spectroscopy and X-ray diffraction studies of Ti-Si layers synthesised by ion implantation| 1991
- 595
-
7412. A scanning tunneling microscope with a wide sampling range| 1991
- 596
-
7417. A versatile scanning tunneling microscope for use in air| 1991
- 596
-
7423. X-ray reflectivity study of SiO2 on Si| 1991
- 596
-
7422. Spin-resolved core and valence electron photoemission from nonepitaxially grown Pb layers on Pt(111)| 1991
- 596
-
7415. A scanning tunneling microscopy study of the surface morphology of supported gold particles| 1991
- 596
-
7416. A transmission electron microscopy study of low-temperature reaction at the Co-Si interface| 1991
- 596
-
7418. Obeservation of gold thin film growth with reflection electron microscopy| 1991
- 596
-
7414. Low energy electron microscopy of surface process| 1991
- 596
-
7420. Spatial coherence of anisotropic and astigmatic sources in interference electron microscopy and holography| 1991
- 596
-
7421. Application of a semi-emperical sputtering model to secondary electron emission| 1991
- 596
-
7419. Performance limits for the scanning tunneling microscope| 1991
- 597
-
7425. X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP| 1991
- 597
-
7424. Pure and mixed titanium, niobium and vanadium oxides as sputtered thick and thin films: crystallographic properties and phase transitions between 300 and 1800 K. I: X-ray diffraction investigations of thick films| 1991
- 601
-
Apparatus for coating continuous webs| 1991
- 601
-
Evacuation apparatus| 1991
- 601
-
Production of sponge metal from sponge metal fines| 1991
- 602
-
Bearing equipment for vacuum devices| 1991
- 602
-
Method for producing a corrosion-resistant coating on the surface of lacquered workpieces| 1991
- 602
-
Device for characterizing semiconductor samples by photoluminescence with high spatial resolution and at low temperature| 1991
- 602
-
Cryostat including heater to heat a target| 1991
- 603
-
Ion bombardment of insulator surfaces| 1991
- 603
-
Method of producing lubricated bearings| 1991
- 603
-
Countergravity casting apparatus and method| 1991
- 603
-
Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method| 1991
- 604
-
Apparatus and evaporator for metallizing foils| 1991
- 604
-
Method for forming a thin film| 1991
- 604
-
Automatic exchanger of an electron beam irradiator for window foil| 1991