Microelectronics journal
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Table of contents
- 313
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Editorial| 1999
- 315
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Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned d-doped backgatesLeadbeater, M.L. et al. | 1999
- 315
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Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned -doped backgatesLeadbeater, M. L. / Burke, T. M. / Linfield, E. H. et al. | 1999
- 319
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Effect of the substrate orientation on the self-organisation of (InGa)As-GaAs quantum dotsHenini, M. et al. | 1999
- 323
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(N11)A GaAs: a preferable platform for high quality GaAs/A1GaAs structuresShtrikman, H. / Harlem, Y. / Soibel, A. et al. | 1999
- 323
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(N11)A GaAs: A preferable platform for high quality GaAs-AlGaAs structuresShtrikman, H. et al. | 1999
- 329
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Formation of II-VI nanostructures on vicinal surfacesMariette, H. et al. | 1999
- 335
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Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behaviorVaitkus, J. et al. | 1999
- 341
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Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etchingSchuler, H. et al. | 1999
- 341
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Size and shape modification of self assembled InAs quantum dots and stacked layers by in-sku etchingSchuler, H. / Eberl, K. et al. | 1999
- 347
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Initial stages of lnP/GaP (100) and (111)~A~.~B grown by metal organic chemical vapor depositionBorgi, K. / Hassen, F. / Maaref, H. et al. | 1999
- 347
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Initial stages of InP-GaP (100) and (111)A,B grown by metal organic chemical vapor depositionBorgi, K. et al. | 1999
- 353
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Giant piezoelectric effect in GaN self-assembled quantum dotsWidmann, F. et al. | 1999
- 357
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Optical study of germanium nanostructures grown on a Si(118) vicinal substrateBremond, G. et al. | 1999
- 363
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Optical investigation of the relaxation process in InGaAs-GaAs single strained quantum wells grown on (001) and (111)B GaAs substratesSánchez, J.J. et al. | 1999
- 367
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Time-resolved photoluminescence study of InGaAs-GaAs quantum wells on (111)B GaAs substratesTsai, F.Y. et al. | 1999
- 373
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Influence of substrate misorientation on the optical and structural properties of InGaAs-GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxySánchez, J.J. et al. | 1999
- 373
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Influence of substrate nfisorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxySanchez, J. J. / Gutierrez, M. / Gonzalez, D. et al. | 1999
- 379
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Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/A1GaAs and InGaAs/ InA1As heterostructures grown by molecular beam epitaxyHiyamizu, S. / Shimomura, S. / Kitada, T. et al. | 1999
- 379
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Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs-AlGaAs and InGaAs- InAlAs heterostructures grown by molecular beam epitaxyHiyamizu, S. et al. | 1999
- 387
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AlAs oxidation process in GaAs/A1GaAs/AIAs heterostructures grown by molecular beam epitaxy on GaAs (nl1)A substratesVaccaro, P. O. / Koizumi, K. / Fujita, K. et al. | 1999
- 387
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AlAs oxidation process in GaAs-AlGaAs-AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substratesVaccaro, P.O. et al. | 1999
- 393
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A scanning tunneling microscopy study of the GaAs(112) surfacesGeelhaar, L. et al. | 1999
- 397
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Selective molecular beam epitaxy growth of quantum wire-dot coupled structures with novel high index facets for InGaAs single electron transistor arraysFujikura, H. et al. | 1999
- 403
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Light emission and the quantum efficiency of lateral p-n junctions on patterned GaAs (100) substratesKoo, B.J. et al. | 1999
- 409
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Multipenod piezoelectric-barrier all-optical light modulatorOrtiz, V. / Mula, G. / Pelekanos, N. T. et al. | 1999
- 409
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Multiperiod piezoelectric-barrier all-optical light modulatorOrtiz, V. et al. | 1999
- 413
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Piezoelectric InGaAs-GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescenceRomero, M.J. et al. | 1999
- 419
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Optical and morphological properties of In(Ga)As-GaAs quantum dots grown on novel index surfacesSanguinetti, S. et al. | 1999
- 427
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Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs-GaAs multiple quantum well pin photodiodesRomero, M.J. et al. | 1999
- 433
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Optical transitions of Al0.35Ga0.65As-GaAs asymmetric double quantum wells grown on GaAs(n11)A (n <= 4) substratesFeng, J.M. et al. | 1999
- 433
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Optical transitions of Al~0~.~3~5Ga~0~.~6~5As/GaAs asymmetric double quantum wells grown on GaAs(nl1)A (n equal to 4) substratesFeng, J. M. / Tateuchi, M. / Asai, K. et al. | 1999
- 439
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Piezoelectric field deternfination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrentIzpura, J. I. / Sanchez, J. J. / Sanchez-Rojas, J. L. et al. | 1999
- 439
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Piezoelectric field determination in strained InGaAs quantum wells grown on (111)B GaAs substrates by differential photocurrentIzpura, J.I. et al. | 1999
- 445
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Cathodoluminescence investigations of vertically stacked, sub-mm arrays of sidewall quantum wires on patterned GaAs (311)A substratesJahn, U. et al. | 1999
- 445
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Cathodoluminescence investigations of vertically stacked, sub-m arrays of sidewall quantum wires on patterned GaAs (311)A substratesJahn, U. / Noetzel, R. / Fricke, J. et al. | 1999
- 449
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Comparative study of the GaAs (113), (115), (001), (115), (113), and (110) surfaces by atomic force microscopy, low energy electron diffraction and reflectance anisotropy spectroscopyPristovsek, M. et al. | 1999
- 455
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Metalorganic vapor phase epitaxy growth and properties of GaAs-AlGaAs and InGaAs-GaAs quantum well structures on (111)A GaAs substratesCho, S. et al. | 1999
- 455
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Metalorganic vapor phase epitaxy growth and properties of GaAs/A1GaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substratesCho, S. / Sanz-Hervas, A. / Kim, J. et al. | 1999
- 461
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Self-ordered nanostructures grown by organometallic chemical vapor deposition on V-grooved substrates: Experiments and Monte-Carlo simulationsLelarge, F. et al. | 1999
- 467
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New relaxation mechanisms in InGaAs-GaAs (111) multiple quantum wellGutiérrez, M. et al. | 1999
- 471
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Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (nOhachi, T. et al. | 1999
- 471
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Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular bealn epitaxial grown GaAs (nlI)A (n = 1-4) substratesOhachi, T. / Feng, J. M. / Asai, K. et al. | 1999
- 477
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Morphological instabilities during homoepitaxv on vicinal GaAs(110) surfacesTejedor, P. / Smilauer, P. / Joyce, B. A. et al. | 1999
- 477
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Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfacesTejedor, P. et al. | 1999
- 483
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PatentsALERT| 1999