Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Table of contents
- 2191
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Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processesLe Gouil, A. / Pargon, E. / Cunge, G. et al. | 2006
- 2198
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Synthesis and optical properties of ZnO–ZnS core-shell nanotube arraysLiao, Hung-Chou / Kuo, Pai-Chia / Lin, Chin-Ching et al. | 2006
- 2202
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Amber -based light-emitting diodes directly grown on substratesOdnoblyudov, V. A. / Tu, C. W. et al. | 2006
- 2205
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Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applicationsPark, Jae-Wan / Park, Jong-Wan / Jung, Kyooho et al. | 2006
- 2209
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Converging lithography by combination of electrostatic layer-by-layer self-assembly and photolithography: Top-down meets bottom-upHah, Jung Hwan / Mayya, Subramanya / Hata, Mitsuhiro et al. | 2006
- 2214
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Study of metal gate deposition by magnetron sputteringYe, Mengqi / Liu, Zhendong / Ding, Peijun et al. | 2006
- 2220
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Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin filmsJagannathan, Hemanth / Deal, Michael / Nishi, Yoshio et al. | 2006
- 2225
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Three-dimensional SU-8 structures by reversal UV imprintHu, W. / Yang, B. / Peng, C. et al. | 2006
- 2230
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Nanochemistry, nanostructure, and electrical properties of film deposited by atomic layer deposition and plasma-enhanced atomic layer depositionGu, Diefeng / Li, Jing / Dey, Sandwip K. et al. | 2006
- 2236
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Multiparameter characterization of cluster ion beamsNicolaescu, D. / Takaoka, G. H. / Ishikawa, J. et al. | 2006
- 2246
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Laser ablation of via holes in GaN and high electron mobility transistor structuresAnderson, Travis / Ren, Fan / Pearton, Stephen J. et al. | 2006
- 2250
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Thickness and Fourier transform infrared peak instability in silicon dioxide thin films deposited using electron-gun depositionCornell, T. / Nightingale, J. R. / Pathak, S. et al. | 2006
- 2256
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Neutron irradiation effects inPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. et al. | 2006
- 2262
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Etching characteristics of TiN used as hard mask in dielectric etch processDarnon, M. / Chevolleau, T. / Eon, D. et al. | 2006
- 2271
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Comparison of microcantilever Hg sensing behavior with thermal higher order modes for as-deposited sputtered and thermally evaporated Au filmsKadam, Ashwini R. / Nordin, Gregory P. / George, Michael A. et al. | 2006
- 2276
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Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactantsMaeng, W. J. / Park, Sang-Joon / Kim, H. et al. | 2006
- 2282
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Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both - and -type field effect transistorsChen, Bae-Horng / Lin, Horng-Chih / Huang, Tiao-Yuan et al. | 2006
- 2291
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Nanoscale structure fabrication of multiple quantum wells by reactive ion etching with chlorine-based gases toward photonic crystalsGozu, Shin-ichiro / Akahane, Kouichi / Yamamoto, Naokatsu et al. | 2006
- 2295
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Back-gated milliampere-class field emission device based on carbon nanosheetsTyler, T. / Shenderova, O. / Ray, M. et al. | 2006
- 2302
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high electron mobility transistors on /poly-SiC substratesAnderson, T. J. / Ren, F. / Voss, L. et al. | 2006
- 2306
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Comparison of different methods to contact to nanowiresLangford, R. M. / Wang, T.-X. / Thornton, M. et al. | 2006
- 2312
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Characterization of in situ diffusion of silver in Ge–Te amorphous films for programmable metallization cell memory applicationsLee, Soo-Jin / Yoon, Soon-Gil / Choi, Kyu-Jeong et al. | 2006
- 2317
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Thermal stability study on nanoscale polysilicide resistorsChen, Yen-Ming / Wang, Ying-Lang / Hwang, Gwo-Jen et al. | 2006
- 2322
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Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin filmLee, Sung Bo / Moon, Jaehyun / Chung, Choong-Heui et al. | 2006
- 2326
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Swing effects in alternating phase shift mask lithography: Implications of low illuminationSingh, Navab / Sun, H. Q. / Foo, W. H. et al. | 2006
- 2331
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Substrate temperature effects on photoresist deformation and self-aligned contact hole etching performancesKim, Myeong-Cheol / Bai, Keun-Hee / Kang, Chang-Jin et al. | 2006
- 2337
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Novel electron-beam-induced reaction of a sulfonium salt in the solid stateEnomoto, Kazuyuki / Moon, Seongyun / Maekawa, Yasunari et al. | 2006
- 2350
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Inductively coupled plasma etching of amorphous and mask layers grown by atomic layer depositionDekker, J. / Kolari, K. / Puurunen, R. L. et al. | 2006
- 2356
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Technique for thermal isolation of antenna-coupled infrared microbolometersa)Middleton, C. F. / Boreman, G. D. et al. | 2006
- 2360
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Investigation of surface roughening of low- films during etching using fluorocarbon plasma beamsYin, Yunpeng / Rasgon, Stacy / Sawin, Herbert H. et al. | 2006
- 2372
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Modeling atomic layer chemical vapor deposition on blanket wafer, via, and trench structures usingStout, Phillip J. / Adams, Vance / Ventzek, Peter L. G. et al. | 2006
- 2381
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Optimization of a inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructuresGuilet, S. / Bouchoule, S. / Jany, C. et al. | 2006
- 2388
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Low resistance, unannealed, Ohmic contacts to -type a)Champlain, James G. / Magno, Richard / Boos, J. Brad et al. | 2006
- 2391
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Plasma doping implant depth profile calculation based on ion energy distribution measurementsa)Godet, L. / Fang, Z. / Radovanov, S. et al. | 2006
- 2398
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Novel nanoscale thermal property imaging technique: The method. I. Principle and the signal measurementRoh, Hee Hwan / Lee, Joon Sik / Kim, Dong Lib et al. | 2006
- 2405
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Novel nanoscale thermal property imaging technique: The method. II. Demonstration and comparisonRoh, Hee Hwan / Lee, Joon Sik / Kim, Dong Lib et al. | 2006
- 2412
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Patchwork field emission properties of lanthanum monosulfide thin filmsSemet, V. / Cahay, M. / Binh, Vu Thien et al. | 2006
- 2417
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Formation and process optimization of scanning resistive probeShin, Hyunjung / Kim, Chanhyung / Lee, Bongki et al. | 2006
- 2424
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Surface roughness exacerbated performance degradation in silicon nanowire transistorsBasu, D. / Gilbert, M. J. / Banerjee, S. K. et al. | 2006
- 2429
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Exciton determination of strain parameters in quantum wellsKasturiarachchi, T. / Brown, F. / Dai, N. et al. | 2006
- 2432
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Atomistic modeling of dopant implantation, diffusion, and activationPelaz, L. / Aboy, M. / Lopez, P. et al. | 2006
- 2437
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Application of x-ray metrology in the characterization of metal gate thin filmsHung, P. Y. / Alshareef, Husam / Lafford, Tamzin et al. | 2006
- 2442
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Mechanism of germanium plasma nitridationSugawara, Takuya / Sreenivasan, Raghavasimhan / McIntyre, Paul C. et al. | 2006
- 2449
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Physical and electrical properties of plasma nitrided germanium oxynitrideSugawara, Takuya / Sreenivasan, Raghavasimhan / McIntyre, Paul C. et al. | 2006
- 2457
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Front and back side Auger electron spectroscopy depth profile analysis to verify an interfacial reaction at the interfaceGondran, Carolyn F. H. / Johnson, Charlene / Choi, Kisik et al. | 2006
- 2460
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Back side exposure of variable size through silicon viasRowbotham, T. / Patel, J. / Lam, T. et al. | 2006
- 2467
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Copper in organic acid based cleaning solutionsPernel, C. / Farkas, J. / Louis, D. et al. | 2006
- 2472
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Influence of crystallographic orientation on dry etch properties of TiNDictus, D. / Shamiryan, D. / Paraschiv, V. et al. | 2006
- L23
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Zinc tin oxide thin-film transistors via reactive sputtering using a metal targetHong, David / Chiang, Hai Q. / Wager, John F. et al. | 2006