Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 2585
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Directional and ionized physical vapor deposition for microelectronics applicationsRossnagel, S. M. et al. | 1998
- 2609
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Si/SiGe field-effect transistors*König, U. / Glück, M. / Höck, G. et al. | 1998
- 2615
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Photo- and electroluminescence characterization of erbium doped SiGeNeufeld, E. / Sticht, A. / Brunner, K. et al. | 1998
- 2619
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Voltage-tunable near-infrared photodetector: Versatile component for optical communication systemsMasini, G. / Colace, L. / Assanto, G. et al. | 1998
- 2623
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Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applicationsZaima, Shigeaki / Yasuda, Yukio et al. | 1998
- 2629
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SiGe/Si heterostructures produced by double-energy and and and ion implantationsXia, Zheng / Ristolainen, Eero O. / Holloway, Paul H. et al. | 1998
- 2633
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Role of Te on the morphology of InAs self-assembled islandsSáfar, G. A. M. / Rodrigues, W. N. / Moreira, M. V. B. et al. | 1998
- 2639
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Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor applicationCohen, G. M. / Zisman, P. / Bahir, G. et al. | 1998
- 2644
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Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substratesKuze, N. / Goto, H. / Matsui, M. et al. | 1998
- 2650
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Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAsLongo, M. / Lovergine, N. / Mancini, A. M. et al. | 1998
- 2656
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Passivation of the GaAs(100) surface with a vapor-deposited GaS filmCao, Xian-an / Hu, Hai-tian / Ding, Xun-min et al. | 1998
- 2660
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Operational experience with a valved antimony cracker source for use in molecular beam epitaxyHall, E. / Naone, R. / English, J. E. et al. | 1998
- 2665
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Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridationLosurdo, M. / Capezzuto, P. / Bruno, G. et al. | 1998
- 2672
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Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric studyRiesz, Ferenc / Dobos, L. / Karányi, J. et al. | 1998
- 2675
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Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applicationsHue, X. / Boudart, B. / Crosnier, Y. et al. | 1998
- 2680
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Investigation of citric acid-hydrogen peroxide etched GaAs and surfaces by spectroscopic ellipsometrySnyder, P. G. / Cho, S.-J. et al. | 1998
- 2686
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Epitaxial silicon grown on /Si(111) structure by molecular beam epitaxyJones, J. T. / Croke, E. T. / Garland, C. M. et al. | 1998
- 2690
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New plasma chemistries for dry etching of InGaAlP alloys: andHong, J. / Cho, H. / Maeda, T. et al. | 1998
- 2695
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Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits usingMitra, A. / Nordquist, C. D. / Jackson, T. N. et al. | 1998
- 2699
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High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formationWesterheim, A. C. / Jones, R. D. / Mager, P. J. et al. | 1998
- 2707
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Neural optimal etch time controller for reactive ion etchingLimanond, Suttipan / Si, Jennie / Tseng, Yuan-Ling et al. | 1998
- 2712
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Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidationChen, Cheng-Rong / Hu, Shu-Fen / Chen, Po-ching et al. | 1998
- 2720
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Elimination of gate oxide damage during electron cyclotron resonance plasma etching of the tungsten polycide gate structure (WSi/poly-Si)Chen, Rui / Koretsky, Milo D. et al. | 1998
- 2725
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Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistorLee, Jong-Lam / Kim, Yi-Tae et al. | 1998
- 2729
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Integration of chemical vapor deposition titanium nitride for 0.25 μm contacts and viasWesterheim, A. C. / Bulger, J. M. / Whelan, C. S. et al. | 1998
- 2734
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Development of texture in interconnect thin film stacksKnorr, D. B. / Merchant, S. M. / Biberger, M. A. et al. | 1998
- 2745
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Electromigration properties of copper-zirconium alloy interconnectsIgarashi, Yasushi / Ito, Toshio et al. | 1998
- 2751
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Effect of partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu/Ti/TiN/Ti metallizationYoshida, Tomoyuki / Hashimoto, Shoji / Mitsushima, Yasuichi et al. | 1998
- 2759
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Dielectric-assisted trilayer lift-off process for improved metal definitionRyan, R. W. / Kopf, R. F. / Hamm, R. A. et al. | 1998
- 2763
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Feasibility of gate patterning by using a hard mask on 0.25 μm technology and belowLee, H. C. / Creusen, M. / Vanhaelemeersch, S. et al. | 1998
- 2767
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Application of dual-functional bilayer resists to focused ion beam nanolithographyHashimoto, Masahiro / Koreeda, Toshishige / Koshida, Nobuyoshi et al. | 1998
- 2772
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Fabrication of x-ray mask from a diamond membrane and its evaluationNoguchi, H. / Kubota, Y. / Okada, I. et al. | 1998
- 2776
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Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditionsWittmaack, K. et al. | 1998
- 2786
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Optimum annealing conditions for boron implanted SiGe epilayersJiang, R. L. / Liu, W. P. / Jiang, N. et al. | 1998
- 2789
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Development of a stainless steel tube resistant to corrosive gas for use in semiconductor manufacturingOhmi, T. / Yoshida, M. / Matudaira, Y. et al. | 1998
- 2796
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Scanning force microscopy characterization of individual carbon nanotubes on electrode arraysMuster, J. / Burghard, M. / Roth, S. et al. | 1998
- 2802
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Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous siliconLützen, J. / Kamal, A. H. M. / Kozicki, M. N. et al. | 1998
- 2806
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Nanometer scale selective etching of Si(111) surface using silicon nitride islandsHa, Jeong Sook / Park, Kang-Ho / Yun, Wan Soo et al. | 1998
- 2811
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Incremental-growth model for the deposition of spatially modulated thin film nanostructuresHodgkinson, Ian / Wu, Qi Hong / McPhun, Adrian et al. | 1998
- 2817
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Nanometer fabrication using selective thermal desorption of induced by focused electron beams and electron beam interference fringesFujita, S. / Maruno, S. / Watanabe, H. et al. | 1998
- 2822
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Fabrication of silicon and metal nanowires and dots using mechanical atomic force lithographyHu, S. / Hamidi, A. / Altmeyer, S. et al. | 1998
- 2825
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Oscillating contrast in room-temperature scanning tunneling microscope images of localized charges in III–V semiconductor cleavage surfacesDomke, C. / Heinrich, M. / Ebert, Ph. et al. | 1998
- 2833
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Investigation of the modification mechanism induced by a scanning tunneling microscope onBertsche, G. / Clauss, W. / Prins, F. E. et al. | 1998
- 2837
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Scanning tunneling microscope tip as a positionable contact: Probing a Josephson-junction array at subkelvin temperaturesWildöer, J. W. G. / van Oudenaarden, A. / Harmans, C. J. P. M. et al. | 1998
- 2841
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Stretch and align virus in nanometer scale on an atomically flat surfaceHu, J. / Zhang, Z.-H. / Ouyang, Z.-Q. et al. | 1998
- 2844
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Analysis of KOH etching of (100) silicon on insulator for the fabrication of nanoscale tipsYun, M. H / Burrows, V. A. / Kozicki, M. N. et al. | 1998
- 2849
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Dry etching of Si field emitters and high aspect ratio resonators using an inductively coupled plasma sourceRakhshandehroo, M. R. / Weigold, J. W. / Tian, W.-C. et al. | 1998
- 2855
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Surface conditioning of active molybdenum field emission cathode arrays with and heliumChalamala, Babu R. / Wallace, Robert M. / Gnade, Bruce E. et al. | 1998
- 2859
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Effect of on the electron emission characteristics of active molybdenum field emission cathode arraysChalamala, Babu R. / Wallace, Robert M. / Gnade, Bruce E. et al. | 1998
- 2866
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Poisoning of Spindt-type molybdenum field emitter arrays byChalamala, Babu R. / Wallace, Robert M. / Gnade, Bruce E. et al. | 1998
- 2871
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Emission characteristics of a conical field emission gunYamamoto, Youiti / Miyokawa, Toshiaki et al. | 1998
- 2876
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Direct current circuit simulation model for a field emission triodeLu, Chih-Wen / Lee, Chung Len et al. | 1998
- 2881
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Simulation study on performance of field emitter arrayWei, Lei / Baoping, Wang / Hanchun, Yin et al. | 1998
- 2887
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Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallizationChen, Xiaomeng / Frisch, Harry L. / Kaloyeros, Alain E. et al. | 1998
- 2891
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Photolithographic patterning of phosphor screens by electrophoretic deposition for field emission display applicationKang, Sang Won / Yoo, Jae Soo / Lee, Jong Duk et al. | 1998
- 2894
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Positive sample bias effect in scanning tunneling microscope imaging of low coverage alkali metal atoms on Si(111)7×7 surfaceEitle, J. / Gorelik, D. / Aloni, S. et al. | 1998
- 2898
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Combined method of focused ion beam milling and ion implantation techniques for the fabrication of high temperature superconductor Josephson junctionsChen, C.-H. / Jin, I. / Pai, S. P. et al. | 1998
- 2902
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Reflow of copper in an oxygen ambientLee, Seung-Yun / Kim, Dong-Won / Rha, Sa-Kyun et al. | 1998
- 2906
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Erratum: “Hole transport investigation in unstrained and strained SiGe” [J. Vac. Sci. Technol. B 16, 1667 (1998)]Bufler, F. M. / Graf, P. / Meinerzhagen, B. et al. | 1998