Vacuum
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Table of contents
- 280
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Institute of physics announcement| 1972
- 281
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Editor's note| 1972
- 282
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Classification system| 1972
- 283
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Study of water vapour adsorbed on a glass surface| 1972
- 283
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The angular distribution of electrons emitted from thin film MIM structures at various temperatures| 1972
- 283
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Investigation of gas discharges produced by laser beam interactions, using the method of pulse holography| 1972
- 283
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Investigation of the mechanism of carbon monoxide oxidation on chromium oxide catalysts with and without molybdenum oxide doping, I| 1972
- 283
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Electric breakdown in the gap between plasma and positive electrode| 1972
- 283
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Energy distribution of thermally stimulated electrons, emitted from KClAg| 1972
- 283
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Ionization processes and charge exchange of ions in cathode spot of an arc discharge in vacuum| 1972
- 283
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Investigation of the mechanism of carbon monoxide oxidation on chromium oxide catalysts with and without molybdenum oxide doping, II| 1972
- 283
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A possible manifestation of Auger processes in thermally stimulated electron emission| 1972
- 283
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Low-voltage arc in caesium vapour at low pressures| 1972
- 283
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Dependence of the scintillation time of the slow component in xenon on pressure| 1972
- 283
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Application of pressed nickel matrix oxide cathodes to obtain intense electron beams| 1972
- 284
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The coefficient of cathodic sputtering in discharges with oscillating electrons| 1972
- 284
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Electrical conductivity, thermal electromotive force and thermionic emission of BaO and SrO single crystals| 1972
- 284
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Statistical model of non-uniform cathode| 1972
- 284
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The dependence of the electron distribution function on the discharge current in Ne and NeHe discharge| 1972
- 284
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Velocity of gas flow and stabilization of a high-frequency discharge| 1972
- 284
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Thermionic emission of tungsten alloys with zirconium, niobium and tantalum, alloyed by the electric-spark method| 1972
- 284
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Properties of the film thermionic emitter Ir (111)—C| 1972
- 284
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Variations of spectral intensities by metastable nitrogen molecules in glow discharges excited in N2 and Ar+N2| 1972
- 284
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Thickness dependence of the quantum and attenuation length of photoelectrons in thin indium films| 1972
- 284
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High-vacuum sorption aggregate for radiochemical investigations| 1972
- 284
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Photoelectron emission from tetrazene. Influence of state of surface and illumination| 1972
- 284
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Ultrahigh vacuum arrangement| 1972
- 284
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Work function of alloy single crystals in the system molybdenumniobium| 1972
- 285
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Mass spectrometers| 1972
- 285
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Differential mercury gauge with acoustic indicating arrangement| 1972
- 285
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Vacuum mass spectrometric investigation of motion feedthroughs in vacuum| 1972
- 285
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Ultrahigh vacuum valve with indium gasket| 1972
- 285
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Precision manipulator for ultrahigh vacuum instruments| 1972
- 285
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Influence of desorption ion currents from the anode on ionization gauge indications at very low pressures| 1972
- 285
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Stabilizer of the heater current for the filament of a mass spectrometer ion source| 1972
- 285
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Admission valve| 1972
- 285
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Coordinator table for accurate displacement in vacuum| 1972
- 285
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Mass spectrometer for precision isotopic analysis of hydrogen| 1972
- 285
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Stability of readings of thermoelectric vacuum gauges at temperature variations| 1972
- 285
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Torsion bellows| 1972
- 285
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Performance characteristics of the pump type N-5S with iron oxide sorption trap| 1972
- 285
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Experimental determination of the error in a compression gauge caused by the pumping action of mercury vapour| 1972
- 286
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Domain wall width in NiFe films—dependence on film thickness and applied field| 1972
- 286
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The influence of fast electrons on the formation of structure in film-deposits during cathodic sputtering in gas discharge| 1972
- 286
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Possible causes of non-appearance of leaks at leak detection| 1972
- 286
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Automatic control of low pressure| 1972
- 286
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Film substrate heater for deposition of thin films in vacuum| 1972
- 286
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Optical cryostat with controlled cooling in the range 5–260°K| 1972
- 286
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Thermoplastic recording of information by interaction of a medium-energy electron beam with a polymer thin film| 1972
- 286
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Experimental operation of a chromatograph-mass spectrometer type MX 1307 M with oil vapour pumping system| 1972
- 286
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Liquid nitrogen level regulator| 1972
- 286
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Cryostat for investigation of absorption of ultrasound in solids at temperatures down to 0.32°K| 1972
- 286
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Application of miniature electrical discharge pumps for leak detection in sealed electrovacuum devices| 1972
- 286
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Preparation and some electrical properties of InP thin films| 1972
- 287
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Preparation and structure investigation of epitaxial nickel films| 1972
- 287
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Preparation of silicon nitride films and investigation of their properties| 1972
- 287
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Preparation of epitaxial films of nickel| 1972
- 287
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Electron-microscopical observation of early stages in the growth of autoepitaxial silicon films by hydrogen reduction of silicon tetrachloride| 1972
- 287
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Arrangement for deposition of metallic films and their annealing at 80 to 800°K| 1972
- 287
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Apparatus for preparation of silicon epitaxial films by vacuum sublimation| 1972
- 287
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Low-energy electron diffraction study of CdS epitaxial growth on GaP| 1972
- 287
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Magnetic discharge arrangement for deposition of films| 1972
- 287
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Apparatus for evaporation of magnetic films with electron beam heating| 1972
- 287
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Properties of cadmium selenide films used in thin-film field-effect transistors| 1972
- 287
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Thermodynamic analysis of the gas-transport process in the system SiI for the case of silicon film growth in an open system| 1972
- 287
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Peculiarities of structure and microporosity of metallic films condensed in vacuum| 1972
- 287
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Investigation of structure and some properties of TlBiS2 films| 1972
- 288
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Crucible-less electron-beam evaporator| 1972
- 288
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Electron-beam deposition source| 1972
- 288
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Single crystal CdSe films| 1972
- 288
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Influence of crystallization temperature on degree of doping of gallium arsenide films and the impurity distribution| 1972
- 288
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X-ray fluorescence method of determining composition and thickness of two-component films| 1972
- 288
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Condensation of metals from an ionized beam| 1972
- 288
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Preparation of single crystal gold films on GaAs| 1972
- 288
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Preparation of condensed films of chalcogenides of metals of IV group| 1972
- 288
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Dependence of resistance of non-rectifying contacts to GaAs on frequency and current density| 1972
- 288
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Electrical and photoelectric characteristics of pSi - nCdS heterojunctions| 1972
- 288
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Silica film preparation by chemical vapour deposition| 1972
- 288
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Peculiarities in the growth of single crystal CdSe films on sapphire, fluorite and mica| 1972
- 289
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Preparation of aluminium oxide films by the pyrolytic method| 1972
- 289
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The hexagonal modification of CdTe in condensed films| 1972
- 289
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Vacuum arrangement for deposition of coatings by sputtering| 1972
- 289
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Investigation of structure of films of the system Sb2Se3Bi2S3| 1972
- 289
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Continuous precision thickness measurements by quartz osillators.| 1972
- 289
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Influence of conditions of chemical deposition of germanium films on the density of dislocations| 1972
- 289
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Preparation of molybdenum oxide films by reactive sputtering| 1972
- 289
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Adhesion and electrical insulation of alumina films, electron beam evaporated onto a steel substrate| 1972
- 289
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Preparation and investigation of structure of copper epitaxial films| 1972
- 289
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Aluminium oxide films prepared by electron-beam method| 1972
- 289
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Preparation of dense SiO2 films by low-temperature decomposition of tetraethoxysilane| 1972
- 289
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Complexometric method for determination of thickness in vacuum deposited thin metallic films| 1972
- 290
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Films produced by evaporation of antimony trisulphide in Ar gas| 1972
- 290
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The problem of reducing anode poisoning in electron-beam devices| 1972
- 290
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High-voltage multi-section vacuum insulator of semiconducting glass ceramics| 1972
- 290
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Protection of mirrors and windows of discharge tubes against products of electrode decomposition| 1972
- 290
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Influence of atmosphere during welding of travelling wave tube bodies on the composition of residual gas| 1972
- 290
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A possible mechanism of anomalously high shot noise in receiving tubes| 1972
- 290
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Photoelectron multipliers in radiation fields| 1972
- 290
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Investigation on the optimization of an evaporation arrangement for producing uniform films for rf circuits| 1972
- 290
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New material for hermetization of the leadthroughs of electron-beam devices| 1972
- 290
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Vacuum discharger| 1972
- 290
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The range of switched voltages of vacuum discharge tubes| 1972
- 290
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Relationship between multi-electron noise in vacuum high-voltage photoelectron devices and pressure and composition of residual gases| 1972
- 291
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Characteristics of assemblies for charged particle detection with electron multipliers| 1972
- 291
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Experimental determination of the density of currents to electrodes in high-current vacuum discharges| 1972
- 291
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Electric strength of accelerator tubes| 1972
- 291
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Scattering of ions by crystals of semiconductors| 1972
- 291
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Scattering of alkali metal ions on single crystals| 1972
- 291
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Miniature tube for acceleration of electrons| 1972
- 291
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Miniature low-background counters for measurement 37Ar and 39Ar| 1972
- 291
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Investigation of interaction of ions with surface of polycrystals by the statistical method| 1972
- 291
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Negative ion sputtering of Cu and Ag during bombardment by positive Cs+ ions| 1972
- 291
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Investigation of ion reflection from polar faces of cadmium sulphide| 1972
- 291
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Microtron for the radiation physics of semiconductors| 1972
- 291
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Automated vacuum pneumatic transporter| 1972
- 291
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Influence of electrode conditioning on the electrical strength of vacuum gap| 1972
- 291
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Electrical insulation in electrostatic analyzers| 1972
- 292
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Time-of-flight analyzer for measurement of energy and mass spectra of particles| 1972
- 292
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Measurement of the time characteristics of semiconductor electron current amplifiers| 1972
- 292
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Growth of defect clusters in thin nickel foils during electron irradiation. I| 1972
- 292
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Determination of the form of field ion tips| 1972
- 292
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Amplification of brightness of field ion patterns by electron-optical converter| 1972
- 292
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A vacuum device for the URS-50 IM diffractometer for the investigation of thin films| 1972
- 292
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Irradiation damage in nickel and iron in a high-voltage electron microscope and threshold energy determination| 1972
- 292
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Investigation of some conditions of formation of high-current electron beams| 1972
- 292
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High-voltage electrongraph UEG-150| 1972
- 292
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Experiments on recuperation of electron beam energy| 1972
- 292
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Some peculiarities of power electron-beam guns with plasma cathodes| 1972
- 292
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Electron transport through mica| 1972
- 292
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Torsion oscillator with long period and relaxation time| 1972
- 292
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Anomalously high collection of copper ions implanted in aluminium| 1972
- 292
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Disorder in implanted semiconductors: energy dependence and penetration depth| 1972
- 292
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Electron-reflection microscopy observation of the ferroelectric domains of Ca2Sr(C2H5CO2)6| 1972
- 293
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Ion mass-spectrometric microscope| 1972
- 293
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Ion-molecule reactions of ethane at low electron energy| 1972
- 293
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Formation of H− ions by charge exchange of 1.5–10 keV protons in thick streams of Li, Na, K and Mg vapours| 1972
- 293
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Preparation of thin metallic foils for electron microscopy by ion bombardment in vacuum| 1972
- 293
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Angular dependence of electron impact excitation cross sections of O2| 1972
- 293
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Metallic hydride targets for the production of neutrons. Operation and preparation| 1972
- 293
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Optimum geometry of discharge chamber of ion source| 1972
- 293
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Application of vacuum spark relays in pulse generators for laser starting| 1972
- 293
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Electron microscope EM-150| 1972
- 293
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Transistorized high-frequency generator for monopole mass spectrometer| 1972
- 293
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Studies of electron impact excitation, negative ion formation, and negative ion-molecule reactions in boron trifluoride and boron trichloride| 1972
- 293
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Path separation type, non-magnetic mass spectrometer| 1972
- 293
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Ion source of mass spectrometer MI-1305 for investigations at high temperatures| 1972
- 294
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Determination of gases in ferrous alloys containing silicon| 1972
- 294
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Structure of a material based on silicon carbide alloyed with titanium| 1972
- 294
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Influence of air pressure on erosion of anode and cathode arcs| 1972
- 294
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Investigation of stability of solid solutions in the system ZrO2Ln2O3| 1972
- 294
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Oxidation rate of WSe2| 1972
- 294
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Application of diffusion welding in vacuum of hard alloy to steel in the fabrication of stamped components| 1972
- 294
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Stability of oxide-carbides in the system ZrCZrO2| 1972
- 294
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Investigation of the induction period of crystallization of quartz glass| 1972
- 294
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Determination of absolute concentration of zinc atoms in gaseous phase by an atomic absorption method| 1972
- 294
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Application of activated magnesium in the quantitative micro-determination of hydrogen in organic materials| 1972
- 294
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Effect of mass spectrometer background on the reproducibility of isotopic analysis of nitrogen and oxygen| 1972
- 294
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Experimental arrangements for high-temperature investigations of the interaction kinetics of construction materials with gases at low pressures| 1972
- 294
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Form of the crystallization front in crucible-less zone melting| 1972
- 294
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Thermal transformations of acid sodium tripolyphosphate Na4HP3O10.H2O| 1972
- 294
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Equipment for ion implantation| 1972
- 295
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Study of the pyrolysis of methane in a glow discharge| 1972
- 295
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Investigation of dissociation in solid solutions InSb-GaSb| 1972
- 295
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Dissociation energy of TiO and TiO2 gaseous molecules| 1972
- 295
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Vacuum-tight argon-arc welding of nickel with X18N10T steel in production of tubular hydrogen filters| 1972
- 295
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Thermal dependence of dissociation and thermodynamic parameters of CuP2| 1972
- 295
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Diffusion bonding of hard alloys with application of ion beam heating| 1972
- 295
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Brazing of a titanium honeycomb| 1972
- 295
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The effects of different fusion modes on the kinetics of purification by distillation| 1972
- 295
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Vapour pressure of GeS2 and GeSe2| 1972
- 295
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Molecular composition of arsenic vapour| 1972
- 295
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Interaction and vapour composition in the system As-I| 1972
- 296
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Author index of abstracts| 1972