Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 3413
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Fabrication of gold nanostructures on a vicinal Si(111) 7×7 surface using ultrahigh vacuum scanning tunneling microscope and a gold‐coated tungsten tipFujita, Daisuke / Jiang, Qidu / Nejoh, Hitoshi et al. | 1996
- 3420
-
Characterization of large‐area arrays of nanoscale Si tips fabricated using thermal oxidation and wet etching of Si pillarsUmbach, C. C. / Weselak, B. W. / Blakely, J. M. et al. | 1996
- 3425
-
Silicon structures for in situ characterization of atomic force microscope probe geometryJarausch, K. F. / Stark, T. J. / Russell, and P. E. et al. | 1996
- 3431
-
Correlation of Raman and optical studies with atomic force microscopy in porous siliconFilios, Adam A. / Hefner, Susan S. / Tsu, Raphael et al. | 1996
- 3436
-
Use of multiple analytical techniques to confirm improved optical modeling of SnO2:F films by atomic force microscopy and spectroscopic ellipsometryRuzakowski Athey, P. / Urban, F. K. / Holloway, P. H. et al. | 1996
- 3445
-
Optimal filtering of scanning probe microscope images for wear analysis of smooth surfacesSchouterden, K. / Lairson, B. M. / Azarian, M. H. et al. | 1996
- 3452
-
Atomic structures of Ag2Te studied by scanning tunneling microscopyOhto, M. / Tanaka, K. et al. | 1996
- 3455
-
Emission measurements and simulation of silicon field‐emitter arrays with linear planar lensesTang, Cha‐Mei / Swyden, T. A. / Thomason, K. A. et al. | 1996
- 3460
-
Comparative study of the elastic properties of silicate glass films grown by plasma enhanced chemical vapor depositionCarlotti, G. / Doucet, L. / Dupeux, M. et al. | 1996
- 3465
-
Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formationFultz, W. W. / Neudeck, G. W. et al. | 1996
- 3470
-
Selective dry etching of oxide films for spacer applications in a high density plasmaAllen, Lynn R. / Yu‐Wang, Victoria / Sato, Masyuki et al. | 1996
- 3473
-
Polysilicon gate etching in high density plasmas. IV. Comparison of photoresist and oxide masked polysilicon etching‐thickness determination of gate oxide layers using x‐ray photoelectron spectroscopyBell, F. H. / Joubert, O. et al. | 1996
- 3483
-
Electron‐beam/ultraviolet hybrid exposure combined with novel bilayer resist system for a 0.15 μm T‐shaped gate fabrication processTakano, H. / Nakano, H. / Minami, H. et al. | 1996
- 3489
-
Ag2Te/As2S3: A high‐contrast, top‐surface imaging resist for 193 nm lithographyLavine, Jerome M. / Buliszak, Mark J. et al. | 1996
- 3492
-
Neutral shadowing in circular cylindrical trench holesAbraham‐Shrauner, Barbara / Chen, Wenjing et al. | 1996
- 3497
-
Process technology for monolithic high‐speed Schottky/resonant tunneling diode logic integrated circuitsLei, P.‐M. / Subramaniam, S. / Bernstein, G. H. et al. | 1996
- 3502
-
Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallizationOuellet, L. / Tremblay, Y. / Gagnon, G. et al. | 1996
- 3509
-
High stability heterojunction bipolar transistors with carbon‐doped base grown by atomic layer chemical beam epitaxyDriad, R. / Alexandre, F. / Juhel, M. et al. | 1996
- 3514
-
Electrical and microstructure analysis of ohmic contacts to p‐ and n‐type GaSb, grown by molecular beam epitaxyVogt, A. / Hartnagel, H. L. / Miehe, G. et al. | 1996
- 3520
-
Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlNVartuli, C. B. / Pearton, S. J. / Abernathy, C. R. et al. | 1996
- 3523
-
High temperature surface degradation of III–V nitridesVartuli, C. B. / Pearton, S. J. / Abernathy, C. R. et al. | 1996
- 3532
-
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor depositionAmbacher, O. / Brandt, M. S. / Dimitrov, R. et al. | 1996
- 3543
-
Thermally stable InGaP/GaAs Schottky contacts using low N content double layer WSiNShiojima, Kenji / Nishimura, Kazumi / Tokumitsu, Masami et al. | 1996
- 3550
-
Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires fabricated on (111)B facet by glancing‐angle molecular beam epitaxyTomita, N. / Tanaka, M. / Saeki, T. et al. | 1996
- 3555
-
Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high‐index substratesFreire, S. L. S. / Cury, L. A. / Matinaga, F. M. et al. | 1996
- 3559
-
Layer‐by‐layer removal of GaAs(110) by bromineCha, C. Y. / Weaver, J. H. et al. | 1996
- 3563
-
Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughnessParmeter, J. E. / Shul, R. J. / Howard, A. J. et al. | 1996
- 3575
-
Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopyInoue, Naohisa / Morimoto, Keizo / Araki, Tsutomi et al. | 1996
- 3582
-
Antimony doped GaAs: A model of dominant current transport mechanismValcheva, E. / Paskova, T. / Yakimova, R. et al. | 1996
- 3588
-
Misfit dislocations in strained InxGa1−xAs heterostructure on patterned GaAs (001) substrateZeng, W. / Jiang, S. S. / Ferrari, C. et al. | 1996
- 3593
-
Surface roughness‐induced artifacts in secondary ion mass spectrometry depth profiling and a simple technique to smooth the surfaceHerner, S. B. / Gila, B. P. / Jones, K. S. et al. | 1996
- 3596
-
Rh/n‐GaAs contacts with and without sulfur passivationEftekhari, G. et al. | 1996
- 3599
-
Hydrogen‐induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopyWatanabe, A. / Shimaya, H. / Naitoh, M. et al. | 1996
- 3603
-
Erratum: Selective wet etching of lattice‐matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid/hydrogen peroxide solution [J. Vac. Sci. Technol. B 14, 3400 (1996)]Fourre, Hervé / Diette, Frédéric / Cappy, Alain et al. | 1996
- 3604
-
Erratum: Surface reaction of trimethylgallium on GaAs [J. Vac. Sci. Technol. B 14, 136 (1996)]Nishizawa, Jun‐ichi / Sakuraba, Hiroshi / Kurabayashi, Toru et al. | 1996
- 3605
-
Erratum: Deep‐etch silicon mm‐waveguide structure for the relativistic acceleration of electrons [J. Vac. Sci. Technol. B 14, 2524 (1996)]Willke, T. L. / Feinerman, A. D. et al. | 1996
- 3620
-
Persistence pays off: Sir Charles Oatley and the scanning electron microscopeEverhart, T. E. et al. | 1996
- 3625
-
Application of scanning probe methods for electronic and magnetic device fabrication, characterization, and testingBorn, A. / Hahn, C. / Löhndorf, M. et al. | 1996
- 3632
-
Low‐energy ion damage in semiconductors: A progress reportHu, Evelyn L. / Chen, Ching‐Hui / Green, Debora L. et al. | 1996
- 3637
-
Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structuresLee, J. W. / Vartuli, C. B. / Abernathy, C. R. et al. | 1996
- 3641
-
Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowthPanepucci, R. / Reuter, E. / Fay, P. et al. | 1996
- 3646
-
Reduced nonradiative recombination in etched/regrown AlGaAs/GaAs structures fabricated by in situ processingKohmoto, S. / Nambu, Y. / Asakawa, K. et al. | 1996
- 3650
-
Etch‐mask of pyrolytic‐photoresist thin‐film for self‐aligned fabrication of smooth and deep faceted three‐dimensional microstructuresPorkolab, G. A. / Hsu, Shih‐Hsiang / Hryniewicz, John V. et al. | 1996
- 3654
-
Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structuresSparing, L. M. / Wang, P. D. / Xin, S. H. et al. | 1996
- 3658
-
Dry etching damage in III–V semiconductorsMurad, S. / Rahman, M. / Johnson, N. et al. | 1996
- 3663
-
Effects of etch‐induced damage on the electrical characteristics of in‐plane gated quantum wire transistorsKo, K. K. / Berg, E. W. / Pang, S. W. et al. | 1996
- 3668
-
Effects of O2 addition to SiCl4/SiF4 and the thickness of the capping layer on gate recess etching of GaAs‐pseudomorphic high electron mobility transistorsMurad, S. K. / Cameron, N. I. / Beaumont, S. P. et al. | 1996
- 3674
-
Investigation of improved regrown material on InP surfaces etched with methane/hydrogen/argonYu, D. G. / Chen, C.‐H. / Keller, B. P. et al. | 1996
- 3679
-
Reactive ion etch‐induced effects on 0.2 μm T‐gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistorsCheung, R. / Patrick, W. / Pfund, I. et al. | 1996
- 3684
-
Photoluminescence studies on radiation enhanced diffusion of dry‐etch damage in GaAs and InP materialsChen, Ching‐Hui / Yu, D. Ginger / Hu, Evelyn L. et al. | 1996
- 3688
-
Suppression of electron shading effect by a counter radio frequency bias in plasma etchingKamata, T. / Arimoto, H. et al. | 1996
- 3692
-
Fabrication of micromechanical switches for routing radio frequency signalsRandall, John N. / Goldsmith, Chuck / Denniston, David et al. | 1996
- 3697
-
Sharpening Si field emitter tips by dry etching and low temperature plasma oxidationRakhshandehroo, M. R. / Pang, S. W. et al. | 1996
- 3702
-
Realization of atomic layer etching of siliconAthavale, Satish D. / Economou, Demetre J. et al. | 1996
- 3706
-
Precision optical aspheres for extreme ultraviolet lithographyKania, D. R. / Gaines, D. P. / Sweeney, D. S. et al. | 1996
- 3709
-
Effects of compaction on 193 nm lithographic system performanceSchenker, Richard / Oldham, William et al. | 1996
- 3714
-
Merit functions for lithographic lens designProgler, Christopher J. / Byrne, Dale M. et al. | 1996
- 3719
-
Attenuated phase shift mask materials for 248 and 193 nm lithographySmith, B. W. / Butt, S. / Alam, Z. et al. | 1996
- 3724
-
Propagation effects of partial coherence in optical lithographySocha, R. J. / Neureuther, A. R. et al. | 1996
- 3730
-
General aspheric refractive micro‐optics fabricated by optical lithography using a high energy beam sensitive glass gray‐level maskDäschner, Walter / Long, Pin / Stein, Robert et al. | 1996
- 3734
-
Simulation of light propagation in optical linear and nonlinear resist layers by finite difference beam propagation and other methodsErdmann, A. / Henke, W. et al. | 1996
- 3738
-
Micro‐objective lens with compact secondary electron detector for miniature low voltage electron beam systemsLiu, W. / Ambe, T. / Pease, R. F. et al. | 1996
- 3742
-
Triangular‐variable‐shaped beams using the cell projection methodSomeda, Yasuhiro / Shoda, Yasunari / Saitou, Norio et al. | 1996
- 3747
-
Combined calculation of lens aberrations, space charge aberrations, and statistical Coulomb effects in charged particle optical columnsJiang, X. R. / Barth, J. E. / Kruit, P. et al. | 1996
- 3753
-
Optical design of a combined ion and electron beam system for nanotechnologyde Jager, P. W. H. / Kruit, P. et al. | 1996
- 3759
-
Fundamental limits to imaging resolution for focused ion beamsOrloff, Jon / Swanson, L. W. / Utlaut, M. et al. | 1996
- 3764
-
High emittance electron gun for projection lithographyDeVore, W. / Berger, S. D. et al. | 1996
- 3770
-
Ultralow voltage imagingHordon, L. S. / Monahan, K. M. et al. | 1996
- 3774
-
Electron‐beam microcolumns for lithography and related applicationsChang, T. H. P. / Thomson, M. G. R. / Kratschmer, E. et al. | 1996
- 3782
-
Semiconductor on glass photocathodes as high‐performance sources for parallel electron beam lithographySchneider, J. E. / Baum, A. W. / Winograd, G. I. et al. | 1996
- 3787
-
Titanium nitride coated tungsten cold field emission sourcesLo, W. K. / Parthasarathy, G. / Lo, C. W. et al. | 1996
- 3792
-
Experimental evaluation of a 20×20 mm footprint microcolumnKratschmer, E. / Kim, H. S. / Thomson, M. G. R. et al. | 1996
- 3797
-
Energy distributions of field emitted electrons from carbide tips and tungsten tips with diamondlike carbon coatingsYu, Ming L. / Kim, Ho‐Seob / Hussey, Brian W. et al. | 1996
- 3802
-
The electrostatic moving objective lens and optimized deflection systems for microcolumnsThomson, M. G. R. et al. | 1996
- 3808
-
Initial images with a partially micromachined scanning electron microscopeCrewe, D. A. / Ruffin, M. M. / Feinerman, A. D. et al. | 1996
- 3813
-
Multielectron beam blanking aperture array system SYNAPSE‐2000Yasuda, Hiroshi / Arai, Soichiro / Kai, Jun‐ichi et al. | 1996
- 3821
-
Characterization and application of a low‐profile metal–semiconductor–metal detector for low energy backscattered electronsMeier, G. D. / Fresser, H. S. / Prins, F. E. et al. | 1996
- 3825
-
Preliminary results from a prototype projection electron‐beam stepper‐scattering with angular limitation projection electron beam lithography proof‐of‐concept systemHarriott, L. R. / Berger, S. D. / Biddick, C. et al. | 1996
- 3829
-
High resolution electron beam lithography using ZEP‐520 and KRS resists at low voltageTanenbaum, D. M. / Lo, C. W. / Isaacson, M. et al. | 1996
- 3834
-
Electron beam induced damage of silicon germaniumPaul, Douglas J. / Ryan, Joseph M. / Pepper, Michael et al. | 1996
- 3839
-
Theory of beam‐induced substrate heatingGroves, T. R. et al. | 1996
- 3845
-
Electron scattering by electron‐beam mask with tapered aperture in cell projection lithographyYamashita, Hiroshi / Ema, Takahiro / Itoh, Katsuyuki et al. | 1996
- 3850
-
Modified mask methods for pattern accuracy enhancement in electron beam lithographySohda, Yasunari / Someda, Yasuhiro / Nakayama, Yoshinori et al. | 1996
- 3855
-
One step electron‐beam lithography for multipurpose diffractive optical elements with 200 nm resolutionDi Fabrizio, E. / Grella, L. / Baciocchi, M. et al. | 1996
- 3860
-
Three‐dimensional electron‐beam lithography using an all‐dry resist processBabin, S. / Koops, H. W. P. et al. | 1996
- 3864
-
Modeling of electron elastic and inelastic scatteringMarrian, C. R. K. / Perkins, F. K. / Park, D. et al. | 1996
- 3870
-
Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writingKasuga, Takashi / Konishi, Morikazu / Oda, Tatsuji et al. | 1996
- 3874
-
Region‐wise proximity effect correction for heterogeneous substrates in electron‐beam lithography: Shape modificationLee, Soo‐Young / Liu, Bin et al. | 1996
- 3880
-
Feature contrast in dose‐equalization schemes used for electron‐beam proximity controlPeckerar, Martin / Marrian, Christie / Perkins, F. Keith et al. | 1996
- 3887
-
Electron‐beam‐induced deposition of copper compound with low resistivityOchiai, Yukinori / Fujita, Jun‐ichi / Matsui, Shinji et al. | 1996
- 3892
-
Divot defect repair on a deep ultraviolet SiNx halftone maskNakamura, H. / Komano, H. / Sugihara, K. et al. | 1996
- 3896
-
A proximity ion beam lithography process for high density nanostructuresWolfe, John C. / Pendharkar, Sandeep V. / Ruchhoeft, Paul et al. | 1996
- 3900
-
Stencil mask temperature measurement and control during ion irradiationRiordon, James / Didenko, Lidia / Melngailis, John et al. | 1996
- 3903
-
Application of optical filters fabricated by masked ion beam lithographyMorgan, M. D. / Horne, W. E. / Sundaram, V. et al. | 1996
- 3907
-
High‐brightness ion source for ion projection lithographyGuharay, S. K. / Wang, W. / Dudnikov, V. G. et al. | 1996
- 3911
-
Energy spread in liquid metal ion sources at low currentsBeckman, J. C. / Chang, T. H. P. / Wagner, A. et al. | 1996
- 3916
-
Sub‐100 nm focused ion beam lithography using ladder silicone spin‐on glassSuzuki, Kohei / Yamashita, Motoji / Kawakami, Nobuyuki et al. | 1996
- 3920
-
Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) depositionLipp, S. / Frey, L. / Lehrer, C. et al. | 1996
- 3924
-
HPR 506 photoresist used as a positive tone ion resistBruenger, W. H. / Buchmann, L.‐M. / Torkler, M. et al. | 1996
- 3928
-
Development of focused ion‐beam machining techniques for Permalloy structuresThaus, D. M. / Stark, T. J. / Griffis, D. P. et al. | 1996
- 3933
-
Use of very low energy in situ focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growthSazio, P. J. A. / Thompson, J. H. / Jones, G. A. C. et al. | 1996
- 3938
-
Fabrication of laterally selected Si doped layer in GaAs using a low‐energy focused ion beam/molecular beam epitaxy combined systemYanagisawa, Junichi / Nakayama, Hiromasa / Wakaya, Fujio et al. | 1996
- 3942
-
Focused ion beam biased repair of conventional and phase shift masksCui, Zheng / Prewett, Philip D. / Watson, John G. et al. | 1996
- 3947
-
Development of ion sources for ion projection lithographyLee, Y. / Gough, R. A. / Kunkel, W. B. et al. | 1996
- 3951
-
Nanofabrication technology by gas cluster ion beamsMatsuo, Jiro / Toyoda, Noriaki / Yamada, Isao et al. | 1996
- 3955
-
Atmospheric metrology using the air turbulence compensated interferometerHenshaw, Philip D. / DeGloria, Donald P. et al. | 1996
- 3960
-
Absolute distance measurement interferometry for alignment systems for advanced lithography toolsDunn, Thomas J. / Lee, Teik‐Meng / Jain, Kanti et al. | 1996
- 3964
-
Initial results from an extreme ultraviolet interferometer operating with a compact laser plasma sourceRay‐Chaudhuri, A. K. / Krenz, K. D. / Nissen, R. P. et al. | 1996
- 3969
-
Simultaneous measurement of gap and superposition in a precision aligner for x‐ray nanolithographyMoon, E. E. / Everett, P. N. / Rhee, K. et al. | 1996
- 3974
-
Latent image formation: Nanoscale topography and calorimetric measurements in chemically amplified resistsOcola, L. E. / Fryer, D. / Nealey, P. et al. | 1996
- 3980
-
Minimizing alignment error induced by asymmetric resist coatingChen, Xun / Pease, R. F. W. et al. | 1996
- 3985
-
Patterning accuracy estimation during stage acceleration in the electron beam direct writing system EX‐8DHattori, K. / Magoshi, S. / Ando, A. et al. | 1996
- 3990
-
Characterization of resist profiles using water enhanced focused ion beam micromachiningStark, T. J. / Griffis, D. P. / Russell, P. E. et al. | 1996
- 3996
-
Investigations on the topology of structures milled and etched by focused ion beamsLipp, S. / Frey, L. / Lehrer, C. et al. | 1996
- 4000
-
Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography systemFields, C. H. / Oldham, W. G. / Ray‐Chaudhuri, A. K. et al. | 1996
- 4004
-
Atomic force microscopy for cross section inspection and metrologyWilder, Kathryn / Quate, Calvin F. / Singh, Bhanwar et al. | 1996
- 4009
-
Analysis of distortion in interferometric lithographyFerrera, Juan / Schattenburg, M. L. / Smith, Henry I. et al. | 1996
- 4014
-
Effects of electron‐beam parameters on critical‐dimension measurementsMizuno, Fumio / Satoh, Osamu et al. | 1996
- 4020
-
0.1μm complementary metal–oxide–semiconductors and beyondToriumi, Akira et al. | 1996
- 4024
-
Fabrication of back‐gated complementary metal‐oxide semiconductor devices using mixed and matched optical and x‐ray lithographiesYang, Isabel Y. / Antoniadis, Dimitri A. / Smith, Henry I. et al. | 1996
- 4029
-
A new high‐performance surface‐micromachined tunneling accelerometer fabricated using nanolithographyKubena, R. L. / Atkinson, G. M. / Robinson, W. P. et al. | 1996
- 4034
-
Metal based single electron transistors operating at several KelvinAltmeyer, S. / Hamidi, A. / Spangenberg, B. et al. | 1996
- 4038
-
Fabrication of lateral resonant tunneling devices with heterostructure barriersRandall, John N. / Broekaert, T. P. E. / Smith, B. D. et al. | 1996
- 4042
-
A triangle‐shaped nanoscale metal–oxide–semiconductor deviceGondermann, J. / Röwer, Th. / Hadam, B. et al. | 1996
- 4046
-
Charge detector realization for AlGaAs/GaAs quantum‐dot cellular automataBazán, G. / Orlov, A. O. / Snider, G. L. et al. | 1996
- 4051
-
A heavy ion implanted pocket 0.10 μm n‐type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron‐beam/deep ultraviolet) and specific gate passivation processBenistant, F. / Tedesco, S. / Guegan, G. et al. | 1996
- 4055
-
Fabrication and performance of thin amorphous Si subwavelength transmission grating for controlling vertical cavity surface emitting laser polarizationZhuang, Lei / Schablitsky, Steve / Shi, Rick C. et al. | 1996
- 4058
-
Fabrication and investigation of nanostructures and their application in new laser devicesGriesinger, U. A. / Kronmüller, S. / Geiger, M. et al. | 1996
- 4062
-
Fabrication of quantum nanostructures for the measurement of thermoelectric phenomenaHannan, M. / Grundbacher, R. / Adesida, I. et al. | 1996
- 4068
-
Fabrication of Si double barrier structureYuki, K. / Hirai, Y. / Morimoto, K. et al. | 1996
- 4072
-
Limit of resolution of a standing wave atom optical lensBehringer, R. E. / Natarajan, Vasant / Timp, G. et al. | 1996
- 4076
-
Fabrication of a refractive microlens integrated onto the monomode fiberBabin, S. / Weber, M. / Koops, H. W. P. et al. | 1996
- 4080
-
Controlling sidewall smoothness for micromachined Si mirrors and lensesJuan, W. H. / Pang, S. W. et al. | 1996
- 4085
-
High‐resolution silicon patterning with self‐assembled monolayer resistsLercel, M. J. / Whelan, C. S. / Craighead, H. G. et al. | 1996
- 4091
-
Fabrication of InP‐based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etchingYoutsey, C. / Adesida, I. / Soole, J. B. D. et al. | 1996
- 4096
-
Fabrication of subwavelength, binary, antireflection surface‐relief structures in the near infraredWendt, J. R. / Vawter, G. A. / Smith, R. E. et al. | 1996
- 4100
-
Combined method of electron‐beam lithography and ion implantation techniques for the fabrication of high‐temperature superconductor Josephson junctionsHollkott, J. / Hu, S. / Becker, C. et al. | 1996
- 4105
-
Conductive dots, wires, and supertips for field electron emitters produced by electron‐beam induced deposition on samples having increased temperatureKoops, H. W. P. / Schössler, C. / Kaya, A. et al. | 1996
- 4110
-
Lithographic band gap tuning in photonic band gap crystalsCheng, C. C. / Scherer, A. / Arbet‐Engels, V. et al. | 1996
- 4115
-
Reliable fabrication of sub‐40 nm period gratings using a nanolithography system with interferometric dynamic focus controlCumming, D. R. S. / Thomas, S. / Beaumont, S. P. et al. | 1996
- 4119
-
Dry etching of horizontal distributed Bragg reflector mirrors for waveguide lasersThomas, S. / Pang, S. W. et al. | 1996
- 4124
-
Mold‐assisted nanolithography: A process for reliable pattern replicationHaisma, Jan / Verheijen, Martin / van den Heuvel, Kees et al. | 1996
- 4129
-
Nanoimprint lithographyChou, Stephen Y. / Krauss, Peter R. / Renstrom, Preston J. et al. | 1996
- 4134
-
Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processesOgino, T. / Hibino, H. / Prabhakaran, K. et al. | 1996
- 4140
-
Nanoscale patterning of an organosilane monolayer on the basis of tip‐induced electrochemistry in atomic force microscopySugimura, Hiroyuki / Okiguchi, Keiko / Nakagiri, Nobuyuki et al. | 1996
- 4144
-
The nanoscilloscope: Combined topography and AC field probing with a micromachined tipvan der Weide, D. W. / Neuzil, P. et al. | 1996
- 4148
-
Three dimensional electron optical modeling of scanning tunneling microscope lithography in resistsDobisz, E. A. / Koops, H. W. P. / Perkins, F. K. et al. | 1996
- 4153
-
Silicon metal‐oxide‐semiconductor field‐effect transistor with gate structures defined by scanned probe lithographyHagedorn, M. S. / Litfin, D. D. / Price, G. M. et al. | 1996
- 4157
-
How practical is 193 nm lithography?Rothschild, M. / Burns, J. A. / Cann, S. G. et al. | 1996
- 4162
-
Can synthetic aperture techniques be applied to optical lithography?Fukuda, Hiroshi / von Bunau, Rudolf M. et al. | 1996
- 4167
-
Large‐area achromatic interferometric lithography for 100 nm period gratings and gridsSavas, T. A. / Schattenburg, M. L. / Carter, J. M. et al. | 1996
- 4171
-
Experimental and simulated estimation of new super resolution techniqueKamon, Kazuya / Matsui, Yasuji et al. | 1996
- 4175
-
Characterization and correction of optical proximity effects in deep‐ultraviolet lithography using behavior modelingYen, Anthony / Tritchkov, Alexander / Stirniman, John P. et al. | 1996
- 4179
-
Application of optical lithography for high aspect ratio microstructuresLoechel, B. / Demmeler, R. / Rothe, M. et al. | 1996
- 4184
-
Calorimetric measurements of optical materials for 193 nm lithographyGrenville, A. / Uttaro, R. / Sedlacek, J. H. C. et al. | 1996
- 4188
-
Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithographyNguyen, K. B. / Cardinale, G. F. / Tichenor, D. A. et al. | 1996
- 4193
-
Study on elliptical polarization illumination effects for microlithographyJeon, Seong‐Ho / Cho, Bae‐Doo / Lee, Kyeong‐Woon et al. | 1996
- 4199
-
Passivate SiNx halftone phase shifting mask for deep ultraviolet exposureIto, S. / Iwamatsu, T. / Sato, H. et al. | 1996
- 4203
-
Prospect and challenges of ArF excimer laser lithography processes and materialsOhfuji, T. / Ogawa, T. / Kuhara, K. et al. | 1996
- 4207
-
Plasma‐deposited silylation resist for 193 nm lithographyHorn, Mark W. / Maxwell, Brian E. / Goodman, Russell B. et al. | 1996
- 4212
-
ArF surface modification resist process with enhanced water sorption abilityMatsuo, Takahiro / Endo, Masayuki / Shirai, Masamitsu et al. | 1996
- 4216
-
Acid‐diffusion suppression in chemical amplification resists by controlling acid‐diffusion channels in base matrix polymersYoshimura, Toshiyuki / Shiraishi, Hiroshi / Terasawa, Tsuneo et al. | 1996
- 4221
-
Diagnostics of patterning mechanisms in chemically amplified resists from bake dependencies of imagesZuniga, Marco A. / Neureuther, Andrew R. et al. | 1996
- 4226
-
A study of acid diffusion in chemically amplified deep ultraviolet resistItani, Toshiro / Yoshino, Hiroshi / Hashimoto, Shuichi et al. | 1996
- 4229
-
A multilayer inorganic antireflective system for use in 248 nm deep ultraviolet lithographyCirelli, R. A. / Weber, G. R. / Kornblit, A. et al. | 1996
- 4234
-
Effect of gaseous permeability of overcoat layer on KrF chemically amplified positive resistsKishimura, S. / Sakai, J. / Tsujita, K. et al. | 1996
- 4239
-
Resist application effects on chemically amplified resist responseDentinger, Paul M. / Nelson, Carla M. / Rhyner, Steven J. et al. | 1996
- 4246
-
Impact of reduced resist thickness on deep ultraviolet lithographyAzuma, T. / Ohiwa, T. / Okumura, K. et al. | 1996
- 4252
-
Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parametersGlezos, N. / Patsis, G. P. / Raptis, I. et al. | 1996
- 4257
-
Negative resist corner rounding. Envelope volume modelingHagouel, Paul Isaac L. / Neureuther, Andrew R. / Zenk, Andrew M. et al. | 1996
- 4262
-
Electron‐beam induced etching of resist with water vapor as the etching mediumKohlmann‐von Platen, K. T. / Bruenger, W. H. et al. | 1996
- 4267
-
Correlation of UVIIHS resist chemistry to dissolution rate measurementsThackeray, J. / Fedynyshyn, T. H. / Kang, D. et al. | 1996
- 4272
-
Nanometer‐scale resolution of calixarene negative resist in electron beam lithographyFujita, J. / Ohnishi, Y. / Ochiai, Y. et al. | 1996
- 4277
-
Measurement of the backscatter coefficient using resist response curves for 20–100 keV electron beam lithography on SiWatson, G. Patrick / Fu, Diana / Berger, Steven D. et al. | 1996
- 4283
-
High voltage electron beam nanolithography on WO3Carcenac, F. / Vieu, C. / Haghiri‐Gosnet, A. M. et al. | 1996
- 4288
-
Extendibility of x‐ray lithography to ⩽130 nm ground rules in complex integrated circuit patternsHector, Scott / Chu, William / Thompson, Matthew et al. | 1996
- 4294
-
Extendibility of synchrotron radiation lithography to the sub‐100 nm regionDeguchi, Kimiyoshi / Miyoshi, Kazunori / Oda, Masatoshi et al. | 1996
- 4298
-
Replication of near 0.1 μm hole patterns by using x‐ray lithographyKikuchi, Yukiko / Kihara, Naoko / Sugihara, Shinji et al. | 1996
- 4303
-
Overlay accuracy of Canon synchrotron radiation stepper XFPA for 0.15 μm processSaitoh, K. / Ohsawa, H. / Sentoku, K. et al. | 1996
- 4308
-
Predicting in‐plane distortion from electron‐beam lithography on x‐ray mask membranesLaird, D. L. / Engelstad, R. L. / Puisto, D. M. et al. | 1996
- 4314
-
Trench isolation at 300 nm active pitch using x‐ray lithographyPerera, Asanga H. / Thompson, M. / Hector, S. et al. | 1996
- 4318
-
A proposal for maskless, zone‐plate‐array nanolithographySmith, Henry I. et al. | 1996
- 4323
-
Optimization of the refractory x‐ray mask fabrication sequenceCummings, K. D. / Dauksher, W. J. / Johnson, W. A. et al. | 1996
- 4328
-
Defect‐free x‐ray masks for 0.2‐μm large‐scale integrated circuitsOkada, I. / Saitoh, Y. / Sekimoto, M. et al. | 1996
- 4332
-
X‐ray mask distortion correction technology using pattern displacement simulatorUchiyama, S. / Oda, M. / Matsuda, T. et al. | 1996
- 4336
-
X‐ray induced mask contamination and particulate monitoring in x‐ray steppersCapasso, C. / Pomerene, A. / Chu, W. et al. | 1996
- 4341
-
Multiple‐pass writing optimization for proximity x‐ray mask‐making using electron‐beam lithographyPuisto, Denise M. / Lawliss, Mark S. / Rocque, Janet M. et al. | 1996
- 4345
-
Fabrication of x‐ray lithography masks with optical lithographyLaTulipe, D. / Maldonado, J. R. / Mitchell, P. et al. | 1996
- 4350
-
Dynamic motion of mask membrane in x‐ray stepperUchida, Norio / Kikuiri, Nobutaka / Nishida, Jun et al. | 1996
- 4354
-
Image placement errors in x‐ray masks induced by changes in resist stress during electron‐beam writingAcosta, R. E. / Puisto, Denise et al. | 1996
- 4359
-
Fabrication of x‐ray masks for giga‐bit DRAM by using a SiC membrane and W–Ti absorberMarumoto, Kenji / Yabe, Hideki / Aya, Sunao et al. | 1996
- 4363
-
Sputtered TaX film properties for x‐ray mask absorbersYoshihara, Takuya / Kotsuji, Setsu / Suzuki, Katsumi et al. | 1996
- 4366
-
X‐ray mask fabrication technology for 0.1 μm very large scale integrated circuitsOda, M. / Uchiyama, S. / Watanabe, T. et al. | 1996