Applied surface science
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
-
AES and XPS measurements: reducing the uncertainty and improving the accuracySeah, M. P. et al. | 1993
- 9
-
Approaching the limits of high resolution depth profilingHofmann, S. et al. | 1993
- 20
-
Diffraction effects in Auger quantitative analysis on III-V compoundsValeri, S. / Di Bona, A. / Nava, E. et al. | 1993
- 24
-
A fast method for the simulation of XPS and AES spectraAlkemade, P. F. A. / Werner, K. / Radelaar, S. et al. | 1993
- 29
-
The escape probability of Auger and photoelectrons from solidsWerner, W. S. M. / Tilinin, I. S. et al. | 1993
- 35
-
Magnesium K X-ray line structure revisitedKlauber, C. et al. | 1993
- 40
-
Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ionsLinnarsson, M. K. / Svensson, B. G. / Andersson, T. G. et al. | 1993
- 44
-
Comparative SIMS and SNMS analyses of amorphous semiconductor thin filmsGnaser, H. / Bock, W. / Oechsner, H. et al. | 1993
- 49
-
XPS and SIMS/SNMS measurements on thin metal oxide layersAlbers, T. / Neumann, M. / Lipinsky, D. et al. | 1993
- 53
-
MeV ion channeling study of SiN~x/Si interfaces formed by various deposition methodsMoon, J. / Ito, T. / Hiraki, A. et al. | 1993
- 58
-
Elastic recoil detection of light elements (C, N, O) with high energy (10-15 MeV) He beamsVan IIzendoorn, L. J. / Rijken, H. A. / Klein, S. S. et al. | 1993
- 63
-
Depth-resolved chemical analysis of environmental microparticles by secondary mass spectrometryGoschnick, J. / Fichtner, M. / Lipp, M. et al. | 1993
- 68
-
Method for sputter rate determination in sputter depth profilingLopez, F. / Garcia-Cuenca, M. V. / Asensi, J. M. et al. | 1993
- 73
-
Problems in the deconvolution of SIMS depth profiles using delta-doped test structuresZalm, P. C. / De Kruif, R. C. M. et al. | 1993
- 79
-
Quantitative surface analysis of Nb~xTa~1~-~x alloys by low-energy ion scatteringVan den Oetelaar, L. C. A. / Jacobs, J.-P. / Mietus, M. J. et al. | 1993
- 85
-
AES analysis of barium fluoride thin filmsKashin, G. N. / Makhnjuk, V. I. / Rumjantseva, S. M. et al. | 1993
- 89
-
Quantitative analysis of Al~xGa~1~-~xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPSOlivier, J. / Padeletti, G. / Ingo, G. M. et al. | 1993
- 94
-
Structural and compositional characterization of laser ablated CeO~2 thin filmsSanchez, F. / Varela, M. / Ferrater, C. et al. | 1993
- 99
-
Influence of synchrotron radiation on corrosion at the water-metal boundaryMomose, T. / Hirayama, H. / Ishimaru, H. et al. | 1993
- 103
-
Correlation between the tribological bahaviour of graphite and its mechanical properties versus the interplan distanceZaidi, H. / Robert, F. / Paulmier, D. et al. | 1993
- 109
-
Studies of the degradation of metal-adhesive interfaces with surface analysis techniquesArnott, D. R. / Wilson, A. R. / Rider, A. N. et al. | 1993
- 114
-
Surface segregation of NiZrO'Connor, D. J. / Kang, H. J. / Pigram, P. et al. | 1993
- 118
-
Surface segregation of antimony in Fe-Si steel for grain oriented sheetsJenko, M. / Vodopivec, F. / Pracek, B. et al. | 1993
- 123
-
Desorbed gas flow rate and surface composition of metal alloysCalcatelli, A. / Plassa, M. / Bergoglio, M. et al. | 1993
- 127
-
XPS of organized molecular assembly/copper interfaces: HS(CH~2)~1~1OH/CuJung, D. R. / King, D. E. / Czanderna, A. W. et al. | 1993
- 133
-
Microfabrication for Si wafers by FAB etchingNishimura, T. / Suzuki, H. / Satake, T. et al. | 1993
- 137
-
Depletion effects in surface segregation of sulfur from polycrystalline high-purity -ironEisl, M. M. / Reichl, B. M. / Stoeri, H. et al. | 1993
- 142
-
Thermionic contrast of polycrystalline refractory metals and its dependence upon the experimental conditions employed during thermal positive-ionic and electronic emissionsKawano, H. / Ohgami, K. / Funato, K. et al. | 1993
- 147
-
Surface characterization of Cu-Ti systems: an IR studyBoccuzzi, F. / Baricco, M. / Guglielminotti, E. et al. | 1993
- 153
-
Sample temperature and introduced gas pressure dependences of the thermal positive and negative ion emissions from thick layers of potassium fluorideKawano, H. / Kenpo, T. / Kitani, H. et al. | 1993
- 158
-
A new method to determine the accumulation rate and mean adsorption lifetime of alkali-halide molecules impinging on a metal surface heated for thermal positive ionizationKawano, H. / Kutsuna, Y. / Ohgami, K. et al. | 1993
- 163
-
Influence of sulfur on surface carbon monolayer formation and graphite growth on nickelAngermann, H.-H. / Hoerz, G. et al. | 1993
- 169
-
AES studies of active intrachannel surface in microchannel platesPracek, B. / Kern, M. et al. | 1993
- 172
-
Investigation of contact surfaces in model reed switches filled with selected gasesMurko-Jezovsek, M. / Mozetic, M. / Pracek, B. et al. | 1993
- 176
-
Tribological behaviour of graphite/graphite and graphite/copper couples in sliding electrical contact: influence of the contact electric field on the surface passivationHounkponou, E. / Nery, H. / Paulmier, D. et al. | 1993
- 180
-
Stability of lubricating properties of graphite by orientation of the crystallites in the presence of water vapourZaidi, H. / Nery, H. / Paulmier, D. et al. | 1993
- 186
-
Changes induced in the secondary electron emission properties of tantalum nitride by Ar^+ bombardment and oxygen exposurePrieto, P. / Galan, L. / Sanz, J. M. et al. | 1993
- 191
-
Quantitative XPS analysis of the oxidation state of cerium in Pt-CeO~2/Al~2O~3 catalystsBak, K. / Hilaire, L. et al. | 1993
- 196
-
A Rutherford backscattering study of interfacial reactions of nickel and cobalt oxides with aluminium oxideBolt, P. H. / Lobner, S. F. / Van den Bout, T. P. et al. | 1993
- 200
-
Structural and morphological modifications of sintering microcrystalline TiO~2: an XRD, HRTEM and FTIR studyCerrato, G. / Marchese, L. / Morterra, C. et al. | 1993
- 206
-
FT-IR study on the adsorption of benzoic acid and its derivatives on transition-metal oxidesKoutstaal, C. A. / Ponec, V. et al. | 1993
- 211
-
XPS characterization of Ni and Mo oxides before and after "in situ" treatmentsBianchi, C. L. / Cattania, M. G. / Villa, P. et al. | 1993
- 217
-
Influence of water concentration on the composition of SiO~2 anodic filmsNajmi, O. / Montero, I. / Galan, L. et al. | 1993
- 222
-
XPS studies on SiO~x thin filmsAlfonsetti, R. / Lozzi, L. / Passacantando, M. et al. | 1993
- 226
-
Surface characterization of ZrO~2-SiO~2 systems prepared by a sol-gel methodNavio, J. A. / Macias, M. / Colon, G. et al. | 1993
- 230
-
XPS studies of SiO~2-TiO~2 powders prepared by sol-gel processIngo, G. M. / Dire, S. / Babonneau, F. et al. | 1993
- 235
-
Combined use of XPS, XAES and SIMS for the characterization of fracture surfaces of CeO~2-Y~2O~3-ZrO~2 coatingsIngo, G. M. et al. | 1993
- 240
-
Comparison of in-situ low-pressure oxidation of pure iron at room temperature in O~2 and in O~2/H~2O mixtures using XPSStambouli, V. / Palacio, C. / Mathieu, H. J. et al. | 1993
- 245
-
Influence of the support on the metal dispersion in Rh/CeO~2 catalystsSoria, J. / Martinez-Arias, A. / Coronado, J. M. et al. | 1993
- 250
-
Recent instrumental developments in surface and thin-film analysis by electron and mass spectrometric techniquesOechsner, H. et al. | 1993
- 261
-
Recent advances in data analysis for electron spectroscopyGaarenstroom, S. W. et al. | 1993
- 266
-
Backscattering limitations to spatial resolution in the Auger microprobeOlson, R. R. / LaVanier, L. A. / Narum, D. H. et al. | 1993
- 273
-
Non-destructive imaging of defects in MBE-grown film with a scanning X-ray diffraction microscopeUchida, F. / Suzuki, Y. et al. | 1993
- 278
-
Mask-less writing of microstructures with the PISAMVaeterlein, P. / Weiss, M. / Wuestenhagen, V. et al. | 1993
- 283
-
Simultaneous energy and angle resolved ion scattering spectroscopy; first resultsBergmans, R. H. / Kruseman, A. C. / Severijns, C. A. et al. | 1993
- 287
-
Fast atom beam bombardment secondary ion mass spectrometry: FAB-SIMSHayashi, H. / Satake, T. / Kaneko, K. et al. | 1993
- 291
-
Wien-filtered Cs^+ beam for SIMS: source descriptionTeodoro, O. M. N. D. / Catarino, M. I. S. / Moutinho, A. M. C. et al. | 1993
- 295
-
Plasma-induced thermoluminescence - a new method of investigating supramolecular architectures and temperature transitions in polymers and other solid surfacesKalachev, A. A. / Lobanov, S. Y. / Lebedeva, T. L. et al. | 1993
- 299
-
Auger oxygen KLL lineshapes in silicon oxides: pattern recognition analysisZemek, J. / Vystrcil, T. / Lesiak-Orlowska, B. et al. | 1993
- 303
-
Surface concentrations of segregating ternary alloys during sputteringDu Plessis, J. et al. | 1993
- 308
-
Electron-stimulated desorption of Kr^2^+ from the surface of solid KrHoshino, A. / Hirayama, T. / Arakawa, I. et al. | 1993
- 313
-
The desorption of transition metals from the Si(100) surfaceGoebel, U. / Bensch, W. / Schloegl, R. et al. | 1993
- 318
-
Optical reflectivity studies of radiation-induced trace disorder in siliconIwanowski, R. J. / Kowalski, B. J. / Bak-Misiuk, J. et al. | 1993
- 322
-
Ion angle dependence in the preferential sputtering of InPMalherbe, J. B. et al. | 1993
- 327
-
Mean energy and depth of penetration of electrons backscattered by solid targetsDapor, M. et al. | 1993
- 332
-
Energetic "self-extracted" H^- ions in a Ba surface conversion sourceHeeren, R. M. A. / De Graaf, M. J. / Ciric, D. et al. | 1993
- 337
-
The use of surface and thin film science in the development of advanced gas sensorsSemancik, S. / Cavicchi, R. E. et al. | 1993
- 347
-
Post-deposition annealing of RF-sputtered zinc-oxide filmsBekman, H. H. P. T. / Benoist, K. W. / Joppe, J. L. et al. | 1993
- 351
-
Atomic beam detection with sintered metal oxidesFujimori, Y. / Kume, S. / Usami, S. et al. | 1993
- 355
-
Negative electron affinity multi-alkali photocathodesGuo, T. / Gao, H. et al. | 1993
- 359
-
Sh and Bi implanted SnO~2 thin films: photoemission studies and application as gas sensorsDale, R. S. / Rastomjee, C. S. / Potter, F. H. et al. | 1993
- 363
-
XPS analysis of the interface of ceramic thin films for humidity sensorsMattogno, G. / Righini, G. / Montesperelli, G. et al. | 1993
- 367
-
LEED and DLEED holography?Heinz, K. / Doell, R. / Wagner, M. et al. | 1993
- 378
-
Structure of Cu on Ir(111): a case study in photoelectron holography and quantitative photoelectron diffractionTonner, B. P. / Zhang, J. / Han, Z.-L. et al. | 1993
- 386
-
Ballistic electron emission microscopy of metal/semiconductor interfaces and heterojunctionsWilliams, R. H. et al. | 1993
- 391
-
Ballistic electron emission microscopy of Schottky diodes on RF-plasma-treated siliconQuattropani, L. / Solt, K. / Niedermann, P. et al. | 1993
- 396
-
Viewing LEED patterns as electron hologramsHu, P. / King, D. A. et al. | 1993
- 402
-
STM and ESCA studies of palladium particles deposited on a HOPG surfaceSartre, A. / Phaner, M. / Porte, L. et al. | 1993
- 407
-
Diamond tips and nanometer-scale mechanical polishingChang, Z. / Ma, Z. / Shen, J. et al. | 1993
- 413
-
STM study of fractal scaling in evaporated gold filmsVazquez, L. / Salvarezza, R. C. / Herrasti, P. et al. | 1993
- 419
-
Mechanism of ternary silicide formation in a Ti-W-Si systemUmezawa, T. / Suzuki, H. et al. | 1993
- 422
-
Electrical characteristics of silver/silicon contactsWeitering, H. H. / Sullivan, J. P. / Carolissen, R. J. et al. | 1993
- 428
-
Structure and concentration analysis of Cu/Si(111) at room temperature with medium energy ion scatteringYasue, T. / Park, C. / Koshikawa, T. et al. | 1993
- 433
-
A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfacesAnyele, H. T. / Cafolla, A. A. / Matthai, C. C. et al. | 1993
- 438
-
Effects of deep centers at Pt/Si interfaces and hydrogenationHsu, C. C. / Ding, S. A. / Lu, L. W. et al. | 1993
- 442
-
The effect of silicon ion beam mixing on the barrier height of Sb/n-Si Schottky contactsMalherbe, J. B. / Weimer, K. P. / Friedland, E. et al. | 1993
- 447
-
On the formation of erbium silicide in a-Si/Er/a-Si/c-Si structuresIjdiyaou, Y. / Azizan, M. / Ameziane, E. L. et al. | 1993
- 452
-
Surface conductivity of Si(111)7 x 7 with submonolayer Pb-coveragesSuurmeijer, E. P. T. M. / Benedictus, R. / Van der Stadt, A. et al. | 1993
- 456
-
l -> (l - 1) AgM~4~,~5 XAS investigation at the Ag/Si(111)2 x 1 interfaceSancrotti, M. / Duo, L. / Cosso, R. et al. | 1993
- 461
-
Effect of crystallographic orientation of Si substrates on SPE NiSi~2 formationYamauchi, S. / Hirai, M. / Kusaka, M. et al. | 1993
- 466
-
Solid phase reaction and epitaxy of Gd-silicide films on Si substratesMolnar, G. / Petoe, G. / Zsoldos, E. et al. | 1993
- 470
-
Schottky barriers on layered semiconductors: a comparison between van der Waals and non van der Waals facesKlein, A. / Lehmann, J. / Pettenkofer, C. et al. | 1993
- 475
-
Influence of the oxygen incorporation on the stability of Al/TiN/Si structuresJimenez, C. / Fernandez, M. / Albella, J. M. et al. | 1993
- 479
-
Oxidation of tantalum silicide thin films in an RF oxygen plasmaGomez-San Roman, R. / Perez-Casero, R. / Perriere, J. et al. | 1993
- 483
-
Reactively sputtered ZrN~x barrier films between Au and SiO~2: surface and interface analysisPopovic, N. / Milic, M. / Nenadovic, T. et al. | 1993
- 488
-
Case studies of metal-III-V compound interactionsLau, S. S. et al. | 1993
- 496
-
Combined analysis of overlayer/S/GaAs interfaces with photoemission spectroscopy and X-ray standing waveOshima, M. / Scimeca, T. / Sugiyama, M. et al. | 1993
- 502
-
Electronic properties of cleaved (110) and MBE-grown (100) InAs surfaces, clean and covered with an ultra-thin Ag adlayerLe Lay, G. / Aristov, V. Y. / Kanski, J. et al. | 1993
- 507
-
Electrical in situ characterisation of metal/gallium phosphide (110) Schottky contactsVon der Emde, M. / Zahn, D. R. T. / Schultz, C. et al. | 1993
- 511
-
Ruthenium and ruthenium-based contacts to GaAsMyburg, G. / Barnard, W. O. / Meyer, W. E. et al. | 1993
- 515
-
Alternative ohmic contact systems to n-InPBarnard, W. O. / Myburg, G. / Auret, F. D. et al. | 1993
- 520
-
Si/ErSi~1~.~7 interfaces and Si reepitaxy on the ErSi~1~.~7/Si structureNguyen Tan, T. A. / Veuillen, J.-Y. / Kennou, S. et al. | 1993
- 526
-
Growth and characterisation of InSb/In~1~-~xAl~xSb strained-layer superlattices by magnetron sputter epitaxyWebb, J. B. / Lockwood, D. J. / Northcott, D. et al. | 1993
- 531
-
Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formationYamada, M. / Ide, Y. / Tone, K. et al. | 1993
- 536
-
Effect of ionization and acceleration of As-source beam on low-temperature epitaxial growth of GaAs on exact (100) SiYun, S. J. / Kim, K. / Yoo, M. C. et al. | 1993
- 542
-
Heteroepitaxial growth and ESR evaluation of 3C-SiCNagasawa, H. / Yamaguchi, Y. / Izumi, T. et al. | 1993
- 546
-
Silicide epilayers: recent developments and prospects for a Si-compatible technologyDerrien, J. / Chevrier, J. / Le Thanh, V. et al. | 1993
- 559
-
Epitaxial phase transitions in the iron/silicon systemVon Kaenel, H. / Onda, N. / Sirringhaus, H. et al. | 1993
- 564
-
Formation of ironsilicide on Si(001)Konuma, K. / Vrijmoeth, J. / Zagwijn, P. M. et al. | 1993
- 569
-
Optical properties of chromium and iron disilicide layersHenrion, W. / Lange, H. / Jahne, E. et al. | 1993
- 573
-
Si-rich p(2 X 2) surface reconstruction of epitaxial fluorite-type iron silicide layers on Si(111)Kafader, U. / Wetzel, P. / Pirri, C. et al. | 1993
- 578
-
Structural phase transition during heteroepitaxial growth of iron silicides on Si(111)Alvarez, J. / Vazquez de Parga, A. L. / Hinarejos, J. J. et al. | 1993
- 583
-
Optical, electrical and structural properties of polycrystalline iron-pyrite (FeS~2) layers deposited by reactive DC magnetron sputteringLichtenberger, D. / Ellmer, K. / Schieck, R. et al. | 1993
- 588
-
Physical properties of Cu-doped FeS~2 pyrite thin filmsFerrer, I. J. / De las Heras, C. / Sanchez, C. et al. | 1993
- 593
-
Crystallization of coevaporated -FeSi~2 thin filmsPowalla, M. / Herz, K. et al. | 1993
- 598
-
Study of the epitaxy of -FeSi~2 by codeposition of Fe and Si on Si(111)Wallart, X. / Nys, J. P. / Dehaese, O. et al. | 1993
- 603
-
Lithographic technologies for future ULSIOkazaki, S. et al. | 1993
- 613
-
In situ XPS analysis of the tungsten/sublayer interface after SF~6 based reactive ion etchingCouchman, N. / Pacifico, C. / Turban, G. et al. | 1993
- 619
-
Poly-gate structures manufactured in a cluster toolHendriks, M. / De Blank, R. / Lindow, E. et al. | 1993
- 624
-
Study on determining factors of low contact resistivity in transition metal-silicon systemsZaima, S. / Yamauchi, T. / Koide, Y. et al. | 1993
- 629
-
Quantification of Si~3N~4 LPCVD inhibition on oxide surfacesKwakman, L. F. T. / Lindow, E. J. / Granneman, E. H. A. et al. | 1993
- 634
-
Chip yield for FETs fabricated on low-surface-defect GaAs wafers grown by a new MBE systemKato, S. / Shigeta, J. / Miyata, T. et al. | 1993
- 634
-
Chip yield for FETs fabricated on low-surface-defect GaAs wafers grown by an new MBE systemKato, S. / Shigeta, J. / Miyata, T. et al. | 1993
- 639
-
Electromigration in vacuum evaporated Cu filmsPark, C. W. / Vook, R. W. et al. | 1993
- 644
-
Detection of residual impurities after the alkali metal enhanced oxidation of Si(100) surfaces by SIMS and Hall effect measurementsPirug, G. / Mueller, O. / Bonzel, H. P. et al. | 1993
- 650
-
Thin film solar cell materialsBauer, G. H. et al. | 1993
- 660
-
Structural and electrical properties of highly conductive c-Si(P) layersConte, G. / Addonizio, M. L. / Nobile, G. et al. | 1993
- 664
-
Investigation on electronic density of states in a-Si~xC~1~-~x:H filmsDemichelis, F. / Pirri, C. F. / Tresso, E. et al. | 1993
- 669
-
Optical properties in RF sputtered CuIn~xGa~1~-~xSe~2 thin filmsYamaguchi, T. / Matsufusa, J. / Yoshida, A. et al. | 1993
- 675
-
p-Type c-SiC prepared by ECR PECVD using tetramethylsilane gasKatsuno, M. / Futagi, T. / Ohta, Y. et al. | 1993
- 680
-
Diffusion and effusion analysis of hydrogen in undoped hydrogenated amorphous silicon thin filmsLopez, F. / Andujar, J. L. / Morenza, J. L. et al. | 1993
- 686
-
Microstructural properties of DC magnetron sputtered a-Si:H and a-Si~1~-~xC~x:HGracin, D. / Ivanda, M. / Lugomer, S. et al. | 1993
- 691
-
Effect of low temperature annealing on the surface state of a-Si:H filmsIshikawa, K. / Okada, K. / Akimoto, M. et al. | 1993
- 695
-
Optical, vibrational and compositional study of amorphous silicon oxynitride thin films grown by an RF plasma using N~2O + SiH~4 gas mixturesCampmany, J. / Andujar, J. L. / Canillas, A. et al. | 1993
- 701
-
MOCVD growth of non-epitaxial and epitaxial ZnS thin filmsFang, J. / Holloway, P. H. / Yu, J. E. et al. | 1993
- 707
-
Reactive magnetron sputtering of Al doped ZnO films: dependence of optical, electrical, compositional and structural properties on deposition conditionsEllmer, K. / Kudella, F. / Mientus, R. et al. | 1993
- 712
-
Growth of silicon microcrystals in thin surface layers of quartz glass with vacuum ultraviolet laser processingKurosawa, K. / Sasaki, W. / Takigawa, Y. et al. | 1993
- 716
-
A new modular multichamber plasma enhanced chemical vapor deposition systemMadan, A. / Rava, P. / Schropp, R. E. I. et al. | 1993
- 722
-
Interfacial processes in the Pd/a-Ge:H systemEdelman, F. / Cytermann, C. / Brener, R. et al. | 1993
- 727
-
On the crystallization of amorphous germanium filmsEdelman, F. / Komem, Y. / Bendayan, M. et al. | 1993
- 731
-
WS~2 thin films prepared by sulphurizationJaeger-Waldau, A. / Lux-Steiner, M. C. / Jaeger-Waldau, G. et al. | 1993
- 737
-
Work functions of thin LaB~6 filmsYutani, A. / Kobayashi, A. / Kinbara, A. et al. | 1993
- 742
-
LaB~x thin films prepared by magnetron sputteringKinbara, A. / Nakano, T. / Kobayashi, A. et al. | 1993
- 746
-
Undoped and fluorine-doped spray deposited SnO~2 films: growth and characterizationTiburcio-Silver, A. / Maldonado, A. / Escobosa, A. et al. | 1993
- 751
-
Preparation of fine powders for electronic materials by freeze-dryingTachiwaki, T. / Suzuki, M. / Okajima, H. et al. | 1993
- 755
-
ZnTe growth by photo-assisted metalorganic vapor phase epitaxy at atmospheric pressureIkejiri, M. / Nakayama, H. / Nishio, M. et al. | 1993
- 759
-
Thin film synthesis of tungsten nitride by the CVD methodNagai, M. / Kishida, K. et al. | 1993
- 763
-
Conformal deposition on a deep-trenched substrate by MOCVDKusakabe, Y. / Ohnishi, H. / Takahama, T. et al. | 1993
- 768
-
Structural characterization of a-SiC:H by thermal desorption spectroscopyMaass, F. / Bertomeu, J. / Asensi, J. M. et al. | 1993
- 772
-
Effect of annealing on the composition of PECVD borosilicate and borophosphosilicate glassesOsorio, S. P. A. / Montero, I. / Perriere, J. et al. | 1993