Journal of vacuum science and technology / B
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Table of contents
- 899
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Photoyield recovery of activated negative electron affinity GaAs photoemitters without additional alkali depositionMulhollan, G. A. / Bierman, J. C. et al. | 2010
- 903
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Integrated high-inductance three-dimensional toroidal inductorsYu, Lin / Weon, Dae-Hee / Kim, Jeong-Il et al. | 2010
- 908
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InAIN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substratesWu, M et al. | 2010
- 908
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InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substratesWu, M. / Leach, J. H. / Ni, X. et al. | 2010
- 912
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TiN thin film resistors for monolithic microwave integrated circuitsMalmros, Anna / Südow, Mattias / Andersson, Kristoffer et al. | 2010
- 916
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Planarization of high aspect ratio diode pillar arrays for blanket electrical contactsVoss, L. F. / Shao, Q. / Reinhardt, C. E. et al. | 2010
- 921
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Micro- and nanopatterned polymethylmethacrylate layers on plastic poly(ethylene terephthalate) substrates by modified roller-reversal imprint processCheng, Chiao-Yang / Hong, Franklin Chau-Nan / Huang, Chun-Yuan et al. | 2010
- 926
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Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsingPetit-Etienne, Camille / Darnon, Maxime / Vallier, Laurent et al. | 2010
- 935
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High-resolution transmission-electron microscope characterization of onionlike carbon transformed from nanodiamondZou, Q. / Wang, M. Z. / Li, Y. G. et al. | 2010
- 940
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Direct-write electron beam lithography in silicon dioxide at low energyBeaumont, Arnaud / Dubuc, Christian / Beauvais, Jacques et al. | 2010
- 946
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Modeling of precursor coverage in ion-beam induced etching and verification with experiments using onEbm, Christoph / Hobler, Gerhard / Waid, Simon et al. | 2010
- 952
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Mechanistic study of ultralow -compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modificationKuo, Ming-Shu / Pal, A. R. / Oehrlein, G. S. et al. | 2010
- 952
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Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Process performance and influence on ULK material modificationKuo, Ming-Shu et al. | 2010
- 961
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Mechanistic study of ultralow -compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow etching processesKuo, Ming-Shu / Pal, A. R. / Oehrlein, G. S. et al. | 2010
- 968
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Degradation behavior of release layers for nanoimprint lithography formed on atomically flat Si(111) terracesKuwabara, Kosuke / Miyauchi, Akihiro / Sugimura, Hiroyuki et al. | 2010
- 973
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Line-width dependency on electromigration performance for long and short copper interconnectsCheng, Yi-Lung / Chang, We-Yuan / Wang, Ying-Lang et al. | 2010
- 978
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Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuitsLwin, Ma Han Thu / Tun, Thet Naing / Kim, Hui Hui et al. | 2010
- 985
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Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistorsDimitrakopoulos, Christos / Lin, Yu-Ming / Grill, Alfred et al. | 2010
- 993
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Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistryWeilnboeck, F. / Bruce, R. L. / Engelmann, S. et al. | 2010
- 1005
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Device characteristics of HfON charge-trap layer nonvolatile memoryLee, Tackhwi / Banerjee, Sanjay K. et al. | 2010
- 1011
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GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxidePolyakov, A. Y. / Markov, A. V. / Duhnovsky, M. P. et al. | 2010
- 1016
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Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillarsGhosh, N. / Kang, W. P. / Davidson, J. L. et al. | 2010
- 1020
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Modified postannealing of the Ge condensation process for better-strained Si material and devicesLiu, Xuyan / Ma, Xiaobo / Du, Xiaofeng et al. | 2010
- 1026
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Ex situ tunnel junction process technique characterized by Coulomb blockade thermometryPrunnila, M. / Meschke, M. / Gunnarsson, D. et al. | 2010
- 1030
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Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometryHung, Yung-Jr / Lee, San-Liang / Pan, Yen-Ting et al. | 2010
- 1039
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-plane GaN hydride vapor phase epitaxy on -plane GaN templates with and without use of TiN intermediate layersPolyakov, A. Y. / Markov, A. V. / Mezhennyi, M. V. et al. | 2010
- 1044
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Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistorsChang, Chih-Yang / Anderson, Travis / Hite, Jennifer et al. | 2010
- 1048
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Spatial coherence in electron-beam patterningPerera, Ginusha M. / Stein, Gila E. / Liddle, J. Alexander et al. | 2010
- 1056
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Effects of nanoscale Ni, Al, and Ni–Al interlayers on nucleation and growth of diamond on SiLi, Y. S. / Tang, Y. / Yang, Q. et al. | 2010
- 1060
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Electron emission from silicon tip arrays controlled by junction minority carrier injectionYoung, Robert M. / Nathanson, Harvey C. / Howell, Robert S. et al. | 2010
- 1066
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Brief Reports and Comments Investigation of the behavior of serum and plasma in a microfluidics systemCaroline Henderson, J et al. | 2010
- 1066
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Investigation of the behavior of serum and plasma in a microfluidics systemHenderson, J. Caroline / Yacopucci, Michele / Chun, ChangJu et al. | 2010
- 1070
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Comparative study on the nonperiodic and periodic gratings for scanning probe microscopy drift measurementsNiu, Dun / Li, Jiawen / Chen, Yuhang et al. | 2010
- 1073
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CUMULATIVE AUTHOR INDEX| 2010
- L39
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Fabrication of antireflection-structured surface using vertical nanowires as an initial structureNagato, Keisuke / Moritani, Hiroki / Hamaguchi, Tetsuya et al. | 2010
- L43
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Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substratesKhanna, R. / Douglas, E. A. / Norton, D. P. et al. | 2010
- L47
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Proton irradiation effects on AlN/GaN high electron mobility transistorsLo, C. F. / Chang, C. Y. / Chu, B. H. et al. | 2010
- L52
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Radioisotope-powered ion gauge with super high stability, long life, and large sensitivity range from ultrahigh vacuum to high pressureLu, Yuerui / Lal, Amit et al. | 2010
- L55
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Stabilization of a tungsten cold field emitterKasuya, Keigo / Katagiri, Souichi / Ohshima, Takashi et al. | 2010
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Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates L43Khanna, R et al. | 2010
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Stabilization of a tungsten <310> cold field emitterKasuya, Keigo et al. | 2010
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Letters Fabrication of antireflection-structured surface using vertical nanowires as an initial structureNagato, Keisuke et al. | 2010
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Proton irradiation effects on AIN/GaN high electron mobility transistors L47Lo, C F et al. | 2010