Vacuum
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Table of contents
- 274
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Some applications of triode sputtering to integrated circuits John H Hall| 1967
- 291
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Editorial| 1967
- 292
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Classification system| 1967
- 293
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891. Adsorption and desorption of hydrogen by evaporated molybdenum films at low temperatures| 1967
- 293
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890. The application of diffusion theory to inert gas motion in ion-bombarded solids. Diffusion theory for discrete media (part 3)| 1967
- 293
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886. Low pressure physical adsorption and electron microscope study of the surface of annealed pyrolytic graphite| 1967
- 293
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887. Environmental effects on the diffusion of Ta182 in bcc titanium| 1967
- 293
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885. Kinetic theory of motion of a gas between two parallel planes at all Knudsen numbers| 1967
- 293
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894. Solubility and diffusion of H2 and D2 in palladium alloys| 1967
- 293
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893. Role of chemisorption in simple catalytic reactions| 1967
- 293
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884. Molecular flow in the transition region. Validity of the diffusion equation. Part 2. Experimental| 1967
- 293
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888. Investigation of adsorption and electron emission of caesium layers on tungsten single crystal| 1967
- 293
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889. Lithium adsorption on tungsten single crystal faces coated by sorbed film of oxygen| 1967
- 293
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892. Calorimetric studies of the chemisorption and desorption of hydrogen on nickel films under ultrahigh vacuum conditions| 1967
- 294
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906. Spectroscopic investigation of gas discharges in argon ion optical quantum generators| 1967
- 294
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895. Diffusion of hydrogen through palladium| 1967
- 294
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900. Cold cathode Penning discharge at low pressure| 1967
- 294
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Lithium adsorption on tungsten single crystal faces coated by sorbed film of oxygen| 1967
- 294
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897. Annular plasmas produced by rotating magnetic fields| 1967
- 294
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896. Diffusive processes in a solid during tempering| 1967
- 294
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898. Arc discharge at low pressures in a magnetic field| 1967
- 294
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904. On the existence of minimal work functions of film cathodes| 1967
- 294
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902. On the measurement of energy distribution of electrons in the presence of plasma noise| 1967
- 294
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907. Gas purifier for plasma generator and mass-spectrometric analysis of trace impurities| 1967
- 294
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Investigation of adsorption and electron emission of caesium layers on tungsten single crystal| 1967
- 294
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899. Emission properties of plasma produced in a vacuum spark. Part 2. Electron beams| 1967
- 294
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901. Reflex discharge in a weak magnetic field| 1967
- 294
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905. Reflex discharges at low pressure| 1967
- 294
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903. Field emission of electrons from metals with non-metallic films| 1967
- 295
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915. Starting sputter-ion pumps and the outgassing of wet metal surfaces| 1967
- 295
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916. A new getter system for opaque vacuum tubes, using samarium or thulium| 1967
- 295
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917. Mechanical booster pump| 1967
- 295
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912. By-products emitted from sputter-ion pumps| 1967
- 295
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913. Study of the efficiency of a getter-ion pump| 1967
- 295
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914. A new type of diffusion pump boiler for ultrahigh vacuum use| 1967
- 295
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918. High vacuum pumping system| 1967
- 295
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910. Low pressure apparatus| 1967
- 295
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908. The application of a selective pumping techniques to upgrade vacuum chambers| 1967
- 295
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909. Ion chamber| 1967
- 295
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911. Continuous linear vacuum system| 1967
- 295
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919. Rotary vacuum pump| 1967
- 296
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921. Vacuum pump| 1967
- 296
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922. Pressure gauge with external collector for ultrahigh vacuum| 1967
- 296
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926. Total and partial pressure measurements in the range between 2 × 10−10 and 10−12 torr| 1967
- 296
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920. Trump| 1967
- 296
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931. Pressure measuring apparatus| 1967
- 296
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923. Magnetron gauge with hot cathode| 1967
- 296
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928. Low pressure measurement with thermistors| 1967
- 296
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927. Bayard-Alpert gauge with LaB6 cathodes and emission stabilizer| 1967
- 296
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930. Ion gauge or pump| 1967
- 296
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Cold cathode Penning discharge at low pressure| 1967
- 296
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925. Dimensioning of getter-ion pumps of rotational symmetry| 1967
- 296
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929. A hot-cathode magnetron ionization gauge with photo-current suppresor| 1967
- 296
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924. Possibilities and limitations of measurement at very low pressures| 1967
- 297
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937. Cryogenic irradiation testing| 1967
- 297
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940. Methods and apparatus for leak detection and location| 1967
- 297
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935. Cryogenic devices using the continuous flow principle| 1967
- 297
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Microwelding of vacuum deposited thin films| 1967
- 297
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943. Epitaxial growth of silicon by vacuum deposition| 1967
- 297
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934. A liquid He cooled trap for ultrahigh vacuum systems| 1967
- 297
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939. Precision temperature control| 1967
- 297
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942. Electron beam gun| 1967
- 297
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Adsorption and desorption of hydrogen by evaporated molybdenum films at low temperatures| 1967
- 297
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933. Vacuum-tight hose fastening| 1967
- 297
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945. Stress in vacuum deposited films of silver| 1967
- 297
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932. The force cycle of vacuum gasket seals| 1967
- 297
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936. Control of temperature and liquid height in cryostats below 4.2°K| 1967
- 297
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941. An improved electron bombardment evaporation source for powdered materials| 1967
- 297
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944. Vapour growth of SiO2 and TiO2 films| 1967
- 297
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938. A cryopump for use in low temperature control| 1967
- 298
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949. Determination of thickness of nickel thin films by means of an electron microscope| 1967
- 298
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947. Electron diffraction investigation of vacuum deposited manganese films| 1967
- 298
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957. Metastable evaporated thin films of CuAg and CuAu alloys. Parts 1 and 2| 1967
- 298
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958. A summary of thin film deposition techniques| 1967
- 298
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950. System for the automatic control of complex vacuum evaporation techniques| 1967
- 298
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953. Oriented growth of semiconductors. 111. Growth of gallium arsenide on germanium| 1967
- 298
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946. Evaporation of Mn, Cu and tin from molten iron under vacuum| 1967
- 298
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952. The effect of uniaxial elastic stresses on the remagnetization of thin permalloy layers| 1967
- 298
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956. Growth of thin gold films on rocksalt from 80 to 475°K| 1967
- 298
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960. High vacuum systems for thin film applications| 1967
- 298
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955. Yield and angular distribution of caesium-sputtered molybdenum| 1967
- 298
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948. Vacuum depositing thin films of iron in a sealed system at very low pressures| 1967
- 298
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954. Oriented growth of semiconductors. IV. Vacuum deposition of epitaxial indium antimonide| 1967
- 298
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959. Theory and practice of RF sputtering| 1967
- 298
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951. Properties of mercury telluride thin films| 1967
- 299
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961. Sputtering processes and film deposition| 1967
- 299
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972. The electrical properties of vacuum and chemically deposited thin and thick resistive films| 1967
- 299
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973. Growth “pyramids” in epitaxial gallium arsenide| 1967
- 299
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964. Structural characteristics of thin metal films produced by condensation in vacuum| 1967
- 299
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966. Structural effect in thin films observed by electron microscopy of the film cross-section| 1967
- 299
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963. Investigation of the structure of metal films by electron diffraction and electron-microscope techniques| 1967
- 299
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962. Advances in sputtering equipment technology| 1967
- 299
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970. Problems encountered in the preparation of thin films by cathodic sputtering at pressure below 10−3 torr| 1967
- 299
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965.Epitaxial conditions of evaporation-deposited Ag films| 1967
- 299
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968. Thin film deposition by decomposition of metallic alciholates in the plasma of a glow discharge| 1967
- 299
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969. Nickel/chromium resistors produced under vacuum| 1967
- 299
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967. Continuously operating evaporation system for reflectors| 1967
- 299
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971. Optical transmission data for thin aluminium films| 1967
- 300
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976. Sputter-deposition procedure| 1967
- 300
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978. Superconductive metallic film production| 1967
- 300
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979. Vapour deposition of a dielectric material| 1967
- 300
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982. Vacuum envelopes for ultrahigh vacuum systems| 1967
- 300
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975. Thin film sputtering equipment| 1967
- 300
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974. Vapour phase growth of gallium arsenide| 1967
- 300
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985. Quick-acting seal| 1967
- 300
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984. High voltage vacuum circuit breaker| 1967
- 300
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983. Elastic seals| 1967
- 300
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980. Thin film analysis apparatus| 1967
- 300
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Melting of nickel at reduced pressure to produce cathodes for electron tubes| 1967
- 300
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986. Vacuum problems of the CERN Intersecting Storage Rings| 1967
- 300
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977. Cathodic sputtering equipment| 1967
- 300
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981. Time characteristics of vacuum disc switches| 1967
- 301
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988. Compensation of beam dispersion in magnetic deflection systems| 1967
- 301
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990. Critical magnetic field for the motion of a charge in some classes of electro-statical fields| 1967
- 301
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992. Electron beam lens| 1967
- 301
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993. Materials compatibility in vacuum environment| 1967
- 301
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997. Techniques for improved performance of a rotary vacuum evaporator| 1967
- 301
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Development of an apparatus for the doping of silicon by activated phosphorus ions| 1967
- 301
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989. Divergence of an electron-ion beam| 1967
- 301
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987. Multicharged heavy ion source| 1967
- 301
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995. Vacuum technology and space simulation| 1967
- 301
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1000. A constant stress vacuum creep-testing apparatus| 1967
- 301
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991. Ion detector| 1967
- 301
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994. Space mechanics—rigid body rotation| 1967
- 301
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996. Space test chamber which exceeds all test requirements| 1967
- 301
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998. Vapour pressure of different metals in the pressure range of 50–4000 torr| 1967
- 301
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999. Ultrahigh vacuum effects on the mechanical behaviour of molybdenum| 1967
- 302
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1015. Calculation of the course of degassing of metal melts| 1967
- 302
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1007. Properties of vacuum remelted high speed steels| 1967
- 302
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1009. Recent developments in crystal pulling from the crucible| 1967
- 302
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1003. High vacuum annealing| 1967
- 302
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1010. Development of an apparatus for the doping of silicon by activated phosphorous ions| 1967
- 302
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1001. Deoxidation at low pressures| 1967
- 302
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1002. Considerations in the use of vacuum in steel making| 1967
- 302
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1004. Grain refinement of cast steel by vacuum melting| 1967
- 302
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1011. Degassing installation by the DHHU process| 1967
- 302
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1016. Studies of the influence of vacuum treatment on the quality of some CrNiMo type alloy steels| 1967
- 302
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1005. The evaporation of liquid iron alloys under vacuum| 1967
- 302
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1006. Methods of degassing aluminium melts and possibilities of control| 1967
- 302
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1013. Applications ov vacuum techniques in metallurgical extraction| 1967
- 302
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1014. Study of beryllium fusion under vacuum| 1967
- 302
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1008. Carbon-oxygen reaction during vacuum degassing of steel melts| 1967
- 302
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1012. Production of 35NCD16 steel by remelting under vacuum| 1967
- 303
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1026. Entrainment in the flash zone of a vacuum distillation column| 1967
- 303
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1027. Capacity of packed columns in vacuum distillation| 1967
- 303
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1024. Degassing chamber| 1967
- 303
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1028. Advances in the technology of molecular distillation| 1967
- 303
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1025. Vacuum distillation and crystal growth of alkali halides| 1967
- 303
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1019. DH unit operation in a basic openhearth shop| 1967
- 303
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1022. Steel degassing equipment| 1967
- 303
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1018. The effect of alloying elements on oxygen and nitrogen contents of steel after vacuum-arc furnace remelting| 1967
- 303
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1030. Chemionization in N and O mixtures| 1967
- 303
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1017. Melting of nickel at reduced pressure to produce cathodes for electron tubes| 1967
- 303
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1020. Induction melting for precision-investment casting| 1967
- 303
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1029. Theory of the dissociative recombination and associative ionization of hydrogen| 1967
- 303
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1023. Metal degassing vacuum tank| 1967
- 303
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1021. Carbon/oxygen reaction in molten nickel and Ni-10 per cent chromium in a vacuum induction furnace| 1967
- 303
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1031. Isotope effects on metastable transitions: C3 H8 D8 and C3| 1967
- 304
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1033. Collision-induced dissociation of D2+ ions by argon and nitrogen| 1967
- 304
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1038. Selection of brazing alloys| 1967
- 304
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1035. Gaseous diffusion: the systems HeKr, ArKr and KrXe| 1967
- 304
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1040. Beryllium oxide-metal seals and their application to semiconductors| 1967
- 304
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1032. Electron attachment and detachment. II. Mixtures of O2 and CO2 and of O2 and H2O| 1967
- 304
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1034. Nondissociative electron capture in complex molecules and negative ion lifetimes| 1967
- 304
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1039. Vacuum welding procedure| 1967
- 304
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1036. Microwelding of vacuum deposited thin films| 1967
- 304
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1042. The surface potential of semiconductors in ultrahigh vacuum and controlled atmosphere| 1967
- 304
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1041. Metal-ceramic joints| 1967
- 304
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1037. Vacuum brazing—from aluminium alloys up through the refractory metals| 1967
- 305
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1044. The mechanism of ion bombardment induced release of gas from tungsten| 1967
- 305
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1043. Evaporation rate and vapour pressure of copper| 1967
- 306
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Author index of abstracts| 1967
- ii
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Index to advertisers| 1967