Materials Science Forum
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
-
Recent measurements and theory relating to impurity-induced LVMS in GaP and GaAsNewman, R. C. / Grosche, E. G. / Ashwin, M. J. et al. | 1997
- 11
-
Optically-induced defects in Si-H nanoparticlesCaldas, M. J. / Baierle, R. J. / Molinari, E. et al. | 1997
- 19
-
Defects and doping in III-V nitridesVan de Walle, C. G. / Neugebauer, J. et al. | 1997
- 27
-
A programme for the future?Stoneham, A. M. et al. | 1997
- 35
-
The hydrogen-saturated self-interstitial in silicon and germaniumBudde, M. / Nielsen, B. B. / Leary, P. et al. | 1997
- 41
-
Matrix-induced isotope shift of a vibrational mode of interstitial oxygen in germaniumPajot, B. / Artacho, E. / Khirunenko, L. I. et al. | 1997
- 47
-
Isotopic shifts of the rotational states of interstitial oxygen in germaniumAichele, N. / Gommel, U. / Lassmann, K. et al. | 1997
- 53
-
DLTS combined with perturbed angular correlation (PAC) or radioactive ^1^1^1In atoms in GeZistl, C. / Sielemann, R. / Haesslein, H. et al. | 1997
- 59
-
Microscopic study of the vacancy and self-interstitial in germanium by PACHaesslein, H. / Sielemann, R. / Zistl, C. et al. | 1997
- 65
-
Localization of nondegenerate electrons at random potential of charged impuritiesKagan, M. S. / Landsberg, E. G. / Zhdanova, N. G. et al. | 1997
- 71
-
Resonance acceptor states and THz generation in uniaxially strained p-GeAltukhov, I. V. / Chirkova, E. G. / Kagan, M. S. et al. | 1997
- 77
-
Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,AsItoh, K. M. / Kinoshita, T. / Walukiewicz, W. et al. | 1997
- 83
-
Defects in SiGeNylandsted Larsen, A. et al. | 1997
- 91
-
Acceptor states in boron doped SiGe quantum wellsSchmalz, K. / Kagan, M. S. / Altukhov, I. V. et al. | 1997
- 97
-
Substitutional carbon in Ge and Si~1~-~xGe~xHoffmann, L. / Bach, J. C. / Lundsgaard Hansen, J. et al. | 1997
- 103
-
Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-GeWauters, D. / Clauws, P. et al. | 1997
- 109
-
Optical investigation of Ge-rich Ge~1~-~xSi~x (0 x 0.1) alloysFranz, M. / Pressel, K. / Dombrowski, K. F. et al. | 1997
- 115
-
Electrical characterization of electron beam induced defects in epitaxially grown Si~1~-~xGe~xMamor, M. / Auret, F. D. / Goodman, S. A. et al. | 1997
- 121
-
Lattice defects in Si~1~-~xGe~x epitaxial diodes induced by 20-MeV alpha raysOhyama, H. / Vanhellemont, J. / Simoen, E. et al. | 1997
- 127
-
Positron annihilation study of electron-irradiated silicon-germanium bulk alloysKawasuso, A. / Okada, S. / Yonenaga, I. et al. | 1997
- 133
-
Electronic properties of defects introduced in n-and p-type Si~1~-~xGe~x during ion etchingGoodman, S. A. / Auret, F. D. / Mamor, M. et al. | 1997
- 139
-
The role of non-radiative defects in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxyBuyanova, I. A. / Chen, W. M. / Pozina, G. et al. | 1997
- 145
-
Gold-related levels in relaxed Si~1~-~xGe~x alloy layers: a study of the pinning effectMesli, A. / Kringhoej, P. / Nylandsted Larsen, A. et al. | 1997
- 151
-
Dislocation-related electronic states in strain-relaxed Si~1~-~xGe~x/Si epitaxial layers grown at low temperatureMooney, P. M. / Shum, K. et al. | 1997
- 159
-
Dislocation activities in bulk GeSi crystalsYonenaga, I. / Sumino, K. et al. | 1997
- 165
-
Schottky diodes on Si~1~-~x~-~yGe~xC~y alloys: measurement of band off-set by DLTSSerpentini, M. / Bremond, G. / Meyer, F. et al. | 1997
- 171
-
Molecular-dynamics simulations of microscopic defects in siliconEstreicher, S. K. / Fedders, P. A. et al. | 1997
- 179
-
Comparison of muonium (hydrogen) dynamics in germanium and siliconLichti, R. L. / Chow, K. H. / Cox, S. F. J. et al. | 1997
- 185
-
Hydrogenation and passivation of B in Si by boiling in water pressurized up to 10 atmOhmura, Y. / Abe, K. / Ohtaka, M. et al. | 1997
- 191
-
Low temperature hydrogen diffusion in silicon: influence of substrate quality and the surface damageSymko, M. I. / Sopori, B. L. / Reedy, R. et al. | 1997
- 197
-
Mechanism of ultrasonic enhanced hydrogenation in poly-Si thin filmsOstapenko, S. et al. | 1997
- 203
-
Hydrogen molecules in crystalline siliconKitajima, M. / Ishioka, K. / Nakamura, K. G. et al. | 1997
- 211
-
Thermal stability of hydrogen molecule in crystalline siliconFukata, N. / Murakami, K. / Ishioka, K. et al. | 1997
- 217
-
Emission and capture kinetics for a hydrogen-related negative-U center in silicon: evidence for metastable neutral charge stateMarkevich, V. P. / Murin, L. I. / Sekiguchi, T. et al. | 1997
- 223
-
IR studies of Si-H bond-bending vibrational modes in SiTokmoldin, S. Z. / Mukashev, B. N. et al. | 1997
- 229
-
Optical absorption due to hydrogen bound to interstitial Si in Si crystal grown in hydrogen atmosphereSuezawa, M. et al. | 1997
- 235
-
Trapping site of hydrogen molecule in crystalline siliconIshioka, K. / Nakamura, K. G. / Kitajima, M. et al. | 1997
- 241
-
Formation and structure of hydrogen molecules in crystalline SiLeitch, A. W. R. / Alex, V. / Weber, J. et al. | 1997
- 247
-
Structure and charge-state-dependent instability of a hydrogen-carbon complex in siliconKamiura, Y. / Ishiga, N. / Ohyama, S. et al. | 1997
- 253
-
The trapping of hydrogen at carbon defects in siliconMainwood, A. et al. | 1997
- 259
-
The M-line (760.8 meV) luminescence system associated with the carbon-hydrogen acceptor centre in siliconSafonov, A. N. / Lightowlers, E. C. et al. | 1997
- 265
-
Interstitial carbon-hydrogen defects in siliconLeary, P. / Oeberg, S. / Briddon, P. R. et al. | 1997
- 271
-
Low-temperature migration of hydrogen and interaction with oxygenBonde Nielsen, K. / Bech Nielsen, B. / Hansen, J. et al. | 1997
- 277
-
Anomalous shift of the 1075 cm^-^1 oxygen-hydrogen defect in siliconHourahine, B. / Jones, R. / Oeberg, S. et al. | 1997
- 283
-
Vibrational absorption from oxygen-hydrogen (O~i-H~2) complexes in hydrogenated CZ siliconPritchard, R. E. / Ashwin, M. J. / Newman, R. C. et al. | 1997
- 289
-
The I centre: a hydrogen related defect in siliconGower, J. E. / Davies, G. / Lightowlers, E. C. et al. | 1997
- 295
-
Theory of gold-hydrogen complexes in siliconResende, A. / Goss, J. / Briddon, P. R. et al. | 1997
- 301
-
Electrically active silver-hydrogen complexes in siliconYarykin, N. / Sachse, J.-U. / Weber, J. et al. | 1997
- 307
-
Palladium-hydrogen related complexes in siliconSachse, J.-U. / Weber, J. / Lemke, H. et al. | 1997
- 313
-
Effects of hydrogen plasma on dislocation motion in siliconYamashita, Y. / Jyobe, F. / Kamiura, Y. et al. | 1997
- 319
-
Hydrogenation of copper related deep states in n-type Si containing extended defectsKaniewski, J. / Kaniewska, M. / Ornoch, L. et al. | 1997
- 325
-
Hydrogenation of deep defect states in n-type Si containing extended defects and transition metal (Ni or Fe)Kaniewska, M. / Kaniewski, J. / Ornoch, L. et al. | 1997
- 331
-
Metastable defects and recombination in hydrogenated amorphous siliconMorgado, E. / Henriques, R. T. et al. | 1997
- 337
-
Tracing diffusion by Laplace deep-level spectroscopyBonde Nielsen, K. / Dobaczewski, L. et al. | 1997
- 341
-
Defects in as-grown silicon and their evolution during heat treatmentsVanhellemont, J. / Dornberger, E. / Esfandyari, J. et al. | 1997
- 347
-
An investigation of the possibility that oxygen diffusion in Czochralski silicon is catalyzed during clusteringMcQuaid, S. A. / Johnson, B. K. / Falster, R. et al. | 1997
- 355
-
Temperature-dependent widths of infrared and far-infrared absorption lines of oxygen in siliconYamada-Kaneta, H. et al. | 1997
- 361
-
The oxygen dimer in silicon: some experimental observationsHallberg, T. / Lindstroem, J. L. / Murin, L. I. et al. | 1997
- 367
-
Formation of oxygen dimers in silicon during electron-irradiation above 250 CLindstroem, J. L. / Hallberg, T. / Aaberg, D. et al. | 1997
- 373
-
High-field EPR spectroscopy of thermal donors in siliconDirksen, R. / Berg Rasmussen, F. / Gregorkiewicz, T. et al. | 1997
- 379
-
Shallow thermal donors in annealed CZ silicon and links to the NL10 EPR spectrum: the relevance of H, Al and N impuritiesNewman, R. C. / Ashwin, M. J. / Pritchard, R. E. et al. | 1997
- 385
-
Formation of ultra shallow donors in silicon by long-term-annealing at 470 CAaberg, D. / Hallberg, T. / Svensson, B. G. et al. | 1997
- 391
-
Local vibrational modes of weakly bound O-H complexes in SiNielsen, B. B. / Tanderup, K. / Budde, M. et al. | 1997
- 399
-
Phonon scattering in heat-treated CZ-siliconZeller, F. / Wurster, C. / Lassmann, K. et al. | 1997
- 405
-
Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopyDe Gryse, O. / Clauws, P. / Vanhellemont, J. et al. | 1997
- 411
-
Influence of the Li concentration on the photoluminescence spectra of neutron-irradiated silicon: passivation of radiation induced centersRodriguez, F. / Davies, G. / Lightowlers, E. C. et al. | 1997
- 417
-
Electric-dipole spin resonance of Be-doped siliconSchroth, H. / Lassmann, K. / Borgmann, C. et al. | 1997
- 423
-
Cadmium-related defects in silicon: electron-paramagnetic resonance identificationGehlhoff, W. / Naeser, A. / Lang, M. et al. | 1997
- 429
-
Iron in p-type silicon: A comprehensive modelZhao, S. / Smith, A. L. / Ahn, S. H. et al. | 1997
- 437
-
Moessbauer spectroscopy of Fe in silicon with the novel laser-ionized ^5^7mn^+ ion beam at ISOLDEWeyer, G. / Degroote, S. / Fanciulli, M. et al. | 1997
- 443
-
Recombination-enhanced Fe atom jump of Fe-acceptor pairs in SiTakahashi, T. / Suezawa, M. et al. | 1997
- 449
-
Precipitation of iron in FZ and CZ siliconHieslmair, H. / Istratov, A. A. / McHugo, S. A. et al. | 1997
- 455
-
The orthorhombic FeIn complex in siliconTidlund, P. / Kleverman, M. et al. | 1997
- 461
-
Copper in silicon: quantitative analysis of internal and proximity getteringMcHugo, S. A. / Heiser, T. / Hieslmair, H. et al. | 1997
- 467
-
A study of the copper-pair related centers in siliconIstratov, A. A. / Heiser, T. / Hieslmair, H. et al. | 1997
- 473
-
The photoluminescence of Pt-implanted siliconAlves, E. / Bollmann, J. / Deicher, M. et al. | 1997
- 479
-
The identification of the Si:Au and Si:Pt 1S~3~/~2(~8)+ phonon-assisted Fano resonanceKleverman, M. / Olajos, J. / Tidlund, P. et al. | 1997
- 485
-
Silver-related donor defect in siliconZhu, M.-X. / Davies, G. / Zafar Iqbal, M. et al. | 1997
- 491
-
Isolated substitutional silver and silver-induced defects in silicon: an electron paramagnetic resonance investigationHai, P. N. / Gregorkiewicz, T. / Ammerlaan, C. A. J. et al. | 1997
- 497
-
Pseudo or deep donor excitation spectra in siliconKleverman, M. et al. | 1997
- 503
-
Vacancies and interstitial atoms in electron-irradiated siliconZillgen, H. / Ehrhart, P. et al. | 1997
- 509
-
Vacancy aggregates in siliconHastings, J. L. / Estreicher, S. K. / Fedders, P. A. et al. | 1997
- 515
-
Identification of VH in silicon by EPRJohannesen, P. / Byberg, J. R. / Nielsen, B. B. et al. | 1997
- 521
-
Novel luminescent centres in cadmium doped siliconFrehill, C. A. / Henry, M. O. / McGlynn, E. et al. | 1997
- 527
-
Defect clusters in silicon: impact on the performance of large-area devicesSopori, B. L. et al. | 1997
- 535
-
Modeling of self-interstitial clusters and their formation mechanism in SiTakeda, S. / Arai, N. / Yamasaki, J. et al. | 1997
- 541
-
Self-interstitials in irradiated siliconMukashev, B. N. / Abdullin, K. A. / Gorelkinskii, Y. V. et al. | 1997
- 547
-
High resolution EELS study of extended defects in siliconKohno, H. / Arai, N. / Mabuchi, T. et al. | 1997
- 553
-
Electron irradiation effects in silicon thin foils under ultra-high vacuum environmentTakeda, S. / Koto, K. / Hirata, M. et al. | 1997
- 559
-
Application of spin dependent recombination for investigation of point defects in irradiated siliconAfanasjev, M. M. / Laiho, R. / Viasenko, L. S. et al. | 1997
- 565
-
Electrical and optical characterisation of defects induced in epitaxially grown n-Si during 1 keV noble gas ion bombardmentDeenapanray, P. N. K. / Auret, F. D. / Myburg, G. et al. | 1997
- 571
-
Fano resonance in a vibronic sideband in siliconGower, J. / Davies, G. / Lightowlers, E. C. et al. | 1997
- 575
-
Frenkel pairs and impurity-defect interactions in p-type silicon irradiated with fast electrons and gamma-rays at low temperaturesEmtsev, V. V. / Dedek, U. / Ehrhart, P. et al. | 1997
- 581
-
Impurity-vacancy complexes formed by electron irradiation of Czochralski siliconAvalos, V. / Dannefaer, S. et al. | 1997
- 587
-
Luminescence centers in high-energy ion-implanted siliconTerashima, K. / Ikarashi, T. / Watanabe, M. et al. | 1997
- 593
-
Performance degradation of microcrystalline silicon-based p-i-n detectors upon he^4 irradiationSchwarz, R. / Vieira, M. / Macarieo, F. et al. | 1997
- 599
-
Persistent excited conductivity induced by proton irradiation in a-Si:HAmekura, H. / Kishimoto, N. / Kono, K. et al. | 1997
- 605
-
Photoluminescence centers associated with noble-gas impurities in siliconEstreicher, S. K. / Weber, J. et al. | 1997
- 611
-
Implantation of reactive and unreactive ions in siliconBrucato, J. R. / Baratta, G. A. / Compagnini, G. et al. | 1997
- 617
-
Photoluminescence vibrational spectroscopy of defects containing the light impurities carbon and oxygen in siliconLightowlers, E. C. / Safonov, A. N. et al. | 1997
- 623
-
Raman scattering measurements in neutron-irradiated siliconCoeck, M. / Laermans, C. / Provoost, R. et al. | 1997
- 629
-
Recombination centers in electron irradiated Si and GaAsBourgoin, J. C. / Zazoui, M. / Zaidi, M. A. et al. | 1997
- 635
-
Study of a Li- and C-related center formed at high annealing temperatures in neutron-irradiated FZ silicon doped with LiRodriguez, F. / Davies, G. / Lightowlers, E. C. et al. | 1997
- 641
-
The influence of accumulated defects on the lateral spread of implanted ionsNakagawa, S. T. et al. | 1997
- 647
-
Structural change and relaxation processes of tetrahedral point defectsMohamed, E.-M. / Shinozuka, Y. et al. | 1997
- 653
-
The Jahn-Teller effect and the structure of monovacancies in Si, SiC and CZywietz, A. / Furthmueller, J. / Bechstedt, F. et al. | 1997
- 659
-
Transient lattice vibration induced by successive carrier captures at a deep-level defect and the effect on defect reactionsShinozuka, Y. / Karatsu, T. et al. | 1997
- 665
-
Characterisation of recombination centres in solar cells by DLTSMarkraft, T. et al. | 1997
- 671
-
Defect-engineering RAD-HARD detectors for the CERN LHCMacEvoy, B. / Gill, K. / Hall, G. et al. | 1997