Materials Science Forum
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Table of contents
- 1293
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Decay kinetics of growth-induced alignment of the first neighbor shell of C~A~s in Al~xGa~1~-~xAsZhou, J. A. / Song, C. Y. / Zheng, J.-F. et al. | 1997
- 1299
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Plausible evidence of existence of deep acceptors in Si -doped AlGaAsTakarabe, K. / Okada, N. / Ohmura, K. et al. | 1997
- 1303
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Magneto-optical and magnetic resonance investigations of intrinsic defects in electron-irradiated n-type Al~xGa~1~-~xAsWietzke, K. H. / Pinheiro, M. V. B. / Koschnick, F. K. et al. | 1997
- 1309
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Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonanceWimbauer, T. / Brandt, M. S. / Bayerl, M. W. et al. | 1997
- 1315
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ODMR investigations of Ge acceptors in p-type Al~0~.~4Ga~0~.~6AsPinheiro, M. V. B. / Krambrock, K. / Chaves, A. S. et al. | 1997
- 1321
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Inverted charge states of anion and cation-site vacancies in zinc blende semiconductors: theoryChadi, D. J. et al. | 1997
- 1329
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Degradation in II-VI laser diodesNakano, K. / Ishibashi, A. et al. | 1997
- 1335
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Defect characterization of II-VI compound semiconductors using positron lifetime spectroscopyTessaro, G. / Mascher, P. et al. | 1997
- 1341
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Defect structures in heavily In-doped II-VI semiconductorsOstheimer, V. / Filz, T. / Hamann, J. et al. | 1997
- 1347
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The role of cation vacancy in compensation of II-VI compounds by fast diffusors - example of Cu in CdSDesnica, U. V. / Desnica-Frankovic, I. D. / Magerle, R. et al. | 1997
- 1353
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Experimental evidence for the two-electron nature of In-related DX states in CdTeSkierbiszewski, C. / Wisniewski, P. / Wilamowski, Z. et al. | 1997
- 1359
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Nature of dislocation-related deep level defects in CdSIstratov, A. A. / Vyvenko, O. F. et al. | 1997
- 1365
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NMR study of carrier states and trapping complexes in the transparent conductor ZnO:M~I~I~IWarren, W. W. / Roberts, N. / Wang, R.-P. et al. | 1997
- 1371
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Cathodoluminescence study on the hydrogenation of ZnO luminescenceSekiguchi, T. / Ohashi, N. / Terada, Y. et al. | 1997
- 1377
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Observation of Frenkel pairs on both sublattices of electron irradiated ZnSeZillgen, H. / Ehrhart, P. et al. | 1997
- 1383
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Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBESeghier, D. / Hauksson, I. S. / Gislason, H. P. et al. | 1997
- 1389
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Donor doping of ZnSe: lattice location and annealing behavior of implanted boronIttermann, B. / Welker, G. / Kroll, F. et al. | 1997
- 1395
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Determination of the lattice site of nitrogen after implantation into ZnSeMarbach, K. / Ittermann, B. / Fuellgrabe, M. et al. | 1997
- 1401
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Charge transfer at Ti ions in ZnTeSelber, H. R. / Peka, P. / Schulz, H.-J. et al. | 1997
- 1407
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Bistable centers in CdMnTeSe:In and CdMnTe:Ga crystals studied by light-induced gratingsKoziarska-Glinka, B. / Ponder, M. / Suchocki, A. et al. | 1997
- 1413
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Deep Levels in Cd~0~.~9~9Mn~0~.~0~1Te: GaSzatkowski, J. / Placzek-Popko, E. / Sieranski, K. et al. | 1997
- 1419
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Vacancy-Type Defects in Electron and Proton Irradiated II-VI CompoundsBrunner, S. / Puff, W. / Mascher, P. et al. | 1997
- 1425
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UV Enhanced and Solar Blind Photodetectors Based on Large-Band-Gap MaterialsMalik, A. / Martins, R. et al. | 1997
- 1431
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Lattice Relaxation of in Donors in CdF~2Suchocki, A. / Rauluszkiewicz, J. / Langer, J. M. et al. | 1997
- 1437
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Shallow Electron Centres in Cdf~2:m^3^+ and Silver HalidesFu, C.-R. / Song, K. S. et al. | 1997
- 1443
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EPR Investigation of Metastable Donor States in CdF~2:In, GaWilamowski, Z. / Dmochowski, J. / Jantsch, W. et al. | 1997
- 1449
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Photoinduced Magnetism in Cdf~2 With Bistable Donors: The Clue for the Negative U?Langer, J. M. / Suchocki, A. / Szymczak, R. et al. | 1997
- 1455
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Evidence of Metastable Deep Acceptors in AgGaS~2 From Time-Resolved EmissionChoi, I.-H. / Yu, P. Y. et al. | 1997
- 1461
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A Positron Lifetime Study of Lattice Defects in Chalcopyrite SemiconductorsSherif Al-Kotb, M. / Puff, W. / Bischof, G. et al. | 1997
- 1467
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Magnetooptical characterization of CuIn(Ga)Se~2Meyer, B. K. / Wagner, M. / Dirnstorfer, I. et al. | 1997
- 1473
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Defects Spectroscopy in -Ga~2O~3Meyer, B. K. / Leib, U. / Hofstaetter, A. et al. | 1997
- 1479
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Bistability of Oxygen Vacancy in Silicon DioxideOshiyama, A. et al. | 1997
- 1485
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Energy Transfer Processes At Erbium Ions in SiliconMichel, J. / Palm, J. / Chen, T. et al. | 1997
- 1491
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Energy Transfer Rate Between Erbium 4f Shell and Si HostTaguchi, A. / Takahei, K. / Matsuoka, M. et al. | 1997
- 1497
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Photoluminescence Study of Erbium in Silicon With a Free-Electron LaserTsimperidis, I. / Gregorkiewicz, T. / Bekman, H. H. P. T. et al. | 1997
- 1503
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Direct Evidence for Stability of Tetrahedral Interstitial Er IN Si Up to 900CWahl, U. / Correia, J. G. / Langouche, G. et al. | 1997
- 1509
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Photo- and Electroluminescence of Erbium-Doped SiliconLanzerstorfer, S. / Stepikhova, M. / Hartung, J. et al. | 1997
- 1515
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Donor Centers in Er-Implanted SiliconEmtsev, V. V. / Andreev, B. A. / Poloskin, D. S. et al. | 1997
- 1521
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Structural Defects and Photoluminescence in Dislocation-Rich Erbium-Doped SiliconVdovin, V. I. / Sobolev, N. A. / Emel'yanov, E. M. et al. | 1997
- 1527
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Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting StructuresSobolev, N. A. / Emel'yanov, A. M. / Nikolaev, Y. A. et al. | 1997
- 1533
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High Temperature Luminescence Due to Er in Porous SiStepikhova, M. / Jantsch, W. / Kocher, G. et al. | 1997
- 1539
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Electron Paramagnetic Resonance of Erbium in Bulk Silicon Carbide CrystalsBaranov, P. G. / Ilyin, I. V. / Mokhov, E. N. et al. | 1997
- 1545
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1.54 mm photoluminescence in Er and Er+o implanted 6H SiCKozanecki, A. / Jantsch, W. / Lanzerstorfer, S. et al. | 1997
- 1551
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Erbium related defects in gallium arsenidePeaker, A. R. / Coppinger, F. / Efeoglu, H. et al. | 1997
- 1559
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Electron spin resonance of Er-oxygen complexes in GaAsIshiyama, T. / Katayama, E. / Takahei, K. et al. | 1997
- 1565
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Er centers in GaAs studied by optical spectroscopy under hydrostatic pressureHogg, R. A. / Taguchi, A. / Takahei, K. et al. | 1997
- 1571
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EXAFS measurement on local structure around erbium atoms doped in GaAs with oxygen co-dopingTabuchi, M. / Ofuchi, H. / Kubo, T. et al. | 1997
- 1577
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Luminescence and annealing studies of Er-implanted GaN with and without oxygen co-dopingSilkowski, E. / Yeo, Y. K. / Hengehold, R. L. et al. | 1997
- 1583
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Er-luminescence in MBE-grown AlGaAsGusev, O. B. / Lindmark, E. K. / Prineas, J. P. et al. | 1997
- 1589
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Crystal-field transitions of Nd^3^+ and Er^3^+ in perovskite-type crystalsDietrich, M. / Thurian, P. / Loa, I. et al. | 1997
- 1595
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Excitation and de-excitation of erbium ions in semiconductor matricesYassievich, I. N. / Bresler, M. S. / Gusev, O. B. et al. | 1997
- 1601
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Mechanism of generation of f-f radiation in semiconductor heterostructuresZegrya, G. G. / Masterov, V. F. et al. | 1997
- 1607
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Infrared induced emission from silicon quantum wiresBagraev, N. T. / Chaikina, E. I. / Gehlhoff, W. et al. | 1997
- 1613
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Acceptor states in boron doped SiGe quantum wellsSchmalz, K. / Kagan, M. S. / Altukhov, I. V. et al. | 1997
- 1619
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Coulomb interaction between carriers localized in InAs/GaAs quantum dots and on point defectsSobolev, M. M. / Kovsh, A. R. / Ustinov, V. M. et al. | 1997
- 1625
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Influence of erbium doping on structure and optical properties of the InGaAs/GaAs superlatticesGerchikov, L. G. / Masterov, V. F. / Stepanova, T. R. et al. | 1997
- 1631
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Defect formation during laser induced intermixing of GaAs/AlGaAs multiple-quantum-well structuresKy, N. H. et al. | 1997
- 1637
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Localized epitaxy for vertical cavity surface emitting laser applicationsErdtmann, M. / Kim, S. / Razeghi, M. et al. | 1997
- 1643
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The long wavelength luminescence observation from the self-organized InGaAs quantum dots grown on (100) GaAs substrate by metalorganic chemical vapor depositionKim, S. / Erdtmann, M. / Razeghi, M. et al. | 1997
- 1653
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Deep hole traps in Be-doped Al~0~.~5 Ga~0~.~5 As MBE layersSzatkowski, J. / Placzek-Popko, E. / Sieranski, K. et al. | 1997
- 1659
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Nanotubes and pinholes in GaN and their formation mechanismLiliental-Weber, Z. / Chen, Y. / Ruminov, S. et al. | 1997
- 1665
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Defect-related recombination processes in low-dimensional structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAsGodlewski, M. / Hommel, D. / Wojtowicz, T. et al. | 1997
- 1671
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Study of hole traps in p-type ZnSe and ZnSSe epilayers by DLTS and admittance spectroscopyHauksson, I. S. / Seghier, D. / Gislason, H. P. et al. | 1997
- 1677
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Auger-type nonradiative recombination processes in bulk and in quantum well structures of II-VI semiconductors containing transition metal ionsGodlewski, M. / Surma, M. / Zakrzewski, A. J. et al. | 1997
- 1683
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Spin-dependent processes in self-assembly impurity quantum wiresBagraev, N. T. / Gehlhoff, W. / Klyachkin, L. E. et al. | 1997
- 1689
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Comparison between as-grown and annealed quantum dots morphologyFerrer, J. C. / Peiro, F. / Cornet, A. et al. | 1997
- 1695
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EPR Studies of Magnetic SuperlatticesWilamowski, Z. / Springholz, G. / Jantsch, W. et al. | 1997
- 1701
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Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum StructuresBresler, M. S. / Ber, B. Y. / Gusev, O. B. et al. | 1997
- 1707
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Ground and Excited States of D^- Centres in Semiconductor Quantum DotsSzafran, B. / Adamowski, J. / Stebel, B. et al. | 1997
- 1713
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Electron Spin Resonance Features of the P~b~1 Interface Defect in Thermal (100)Si/SiO~2Stesmans, A. / Afanas'ev, V. V. et al. | 1997
- 1719
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Silicon Surface Defects: The Roles of Passivation and Surface ContaminationReddy, A. J. / Burr, T. A. / Chan, J. K. et al. | 1997
- 1725
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Heat-treatment Induced Modifications of Porous SiliconDannefaer, S. / Wiebe, C. / Kerr, D. et al. | 1997
- 1731
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Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and Its Application to Defect and Interface CharacterizationTajima, M. / Ibuka, S. / Warashina, M. et al. | 1997
- 1737
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Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth ModesKrispin, P. / Hey, R. / Kostial, H. et al. | 1997
- 1743
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TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-PreparationPreis, H. / Frey, T. / Reisinger, T. et al. | 1997
- 1749
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Defect Formation and Electronic Transport at AlGaN/GaN InterfacesHsu, L. / Walukiewicz, W. / Haller, E. E. et al. | 1997
- 1755
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Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN / Al~2O~3(0001) Studied by TEMKaiser, S. / Preis, H. / Ambacher, O. et al. | 1997
- 1761
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Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in SiliconKaczor, P. / Dobaczewski, L. / Gregorkiewicz, T. et al. | 1997
- 1767
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Diffusion and Precipitation of Oxygen in Silicon doped with GermaniumKhirunenko, L. I. / Shakhovtsov, V. I. / Shumov, V. V. et al. | 1997
- 1773
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The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in SiliconKhirunenko, L. I. / Pomozov, Y. V. / Shakhovtsov, V. I. et al. | 1997
- 1777
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EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in SiliconGorelkinskii, Y. V. / Mukashev, B. N. / Abdullin, K. A. et al. | 1997
- 1783
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Segregation of Gold at Dislocations Confirmed by Gold Diffusion Into Highly Dislocated SiliconBracht, H. / Rodriguez Schachtrup, A. / Yonenaga, I. et al. | 1997
- 1789
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Annealing of Low-temperature Substitutional Gold in Silicon: Ring-diffusion of Substitutional Gold in SiliconMorooka, M. et al. | 1997
- 1795
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Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline SiliconMcHugo, S. A. / Thompson, A. C. / Imaizumi, M. et al. | 1997
- 1801
-
Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device TechnologySobolev, N. A. et al. | 1997
- 1807
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Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InPFrigeri, C. / Carnera, A. / Fraboni, B. et al. | 1997
- 1813
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Lithium Induced Vacancy Formation and Its Effect on the Diffusivity of Lithium in Gallium ArsenideGislason, H. P. / Leosson, K. / Svavarsson, H. et al. | 1997
- 1821
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Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAsOhno, T. / Sasaki, T. / Taguchi, A. et al. | 1997
- 1827
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Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAsLeosson, K. / Gislason, H. P. et al. | 1997
- 1833
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Low Temperature Impurity Diffusion into Large-Band-Gap SemiconductorsBagraev, N. T. / Gippius, A. A. / Klyachkin, L. E. et al. | 1997
- 1839
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Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well StructuresNguyen Hong Ky et al. | 1997