Physica B: Condensed Matter
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
-
The fascinating dynamics of defects in siliconEstreicher, S.K. et al. | 2002
- 8
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Thermal double donors in Si and GeJones, R. et al. | 2002
- 13
-
Misfortune, challenge, and success: defects in processed semiconductor devicesCerva, H. et al. | 2002
- 18
-
Optical study of GaN:Mn co-doped with Mg grown by metal organic vapor phase epitaxyKorotkov, R.Y. et al. | 2002
- 22
-
Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T. et al. | 2002
- 26
-
Investigation of the defect structure of GaN heavily doped with oxygenKorotkov, R.Y. et al. | 2002
- 30
-
Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxyKorotkov, R.Y. et al. | 2002
- 34
-
Photoluminescence properties of Er doped GaNPrzybylinska, H. et al. | 2002
- 38
-
Compensation mechanism in MOCVD and MBE grown GaN:MgAlves, H. et al. | 2002
- 42
-
Green and red emission in Ca implanted GaN samplesMonteiro, T. et al. | 2002
- 47
-
Study of dopant activation in bulk GaN:MgPiotrzkowski, R. et al. | 2002
- 51
-
Magnetic resonance studies of defects in GaN with reduced dislocation densitiesGlaser, E.R. et al. | 2002
- 58
-
Radiation-induced defects in n-type GaN and InNEmtsev, V.V. et al. | 2002
- 62
-
A radiation-produced defect in GaN displaying hyperfine structure with three Ga atomsWatkins, G.D. et al. | 2002
- 66
-
Electron paramagnetic resonance of GaN detected by recombination afterglowRogulis, U. et al. | 2002
- 69
-
Defect-related noise in AlN and AlGaN alloysGoennenwein, S.T.B. et al. | 2002
- 73
-
Positively charged muonium centers in aluminum and gallium nitridesLichti, R.L. et al. | 2002
- 77
-
Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trappingSaarinen, K. et al. | 2002
- 81
-
Influence of defects in low-energy nitrogen ion beam assisted gallium nitride thin film depositionGerlach, J.W. et al. | 2002
- 85
-
ODEPR and yellow luminescence intensity in GaN under high pressureMichael, K. et al. | 2002
- 89
-
Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxyZhang, Wei et al. | 2002
- 93
-
Characterization of AlxGa1-xN layers grown by molecular beam epitaxyKim, Hyonju et al. | 2002
- 98
-
AFM study of lattice matched and strained InGaAsN layers on GaAsPark, Yeonjoon et al. | 2002
- 102
-
In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayersGodlewski, M. et al. | 2002
- 106
-
Strain relaxation in GaNxP1-x alloy: effect on optical propertiesBuyanova, I.A. et al. | 2002
- 110
-
Positron annihilation in AlN and GaNArutyunov, N.Yu et al. | 2002
- 114
-
Distribution of the lateral correlation length in GaN epitaxial layersKozlowski, J. et al. | 2002
- 117
-
The role of oxygen and hydrogen in GaNClerjaud, B. et al. | 2002
- 122
-
Hydrogen vibrational lines in HVPE GaNWeinstein, M.G. et al. | 2002
- 126
-
Properties of carbon as an acceptor in cubic GaNKöhler, U. et al. | 2002
- 130
-
Electrically active defects in AlGaN alloys grown by metalorganic chemical vapor depositionSeghier, D. et al. | 2002
- 134
-
Electronic levels of isolated and oxygen-perturbed hydrogen in silicon and migration of hydrogenNielsen, K.Bonde et al. | 2002
- 139
-
Piezospectroscopic analysis of the hydrogen-carbon complexes in siliconAndersen, O. et al. | 2002
- 143
-
Formation mechanism of hydrogen-induced (111) platelets in siliconKim, Yong-Sung et al. | 2002
- 147
-
Vibrational properties of H-related defects in siliconPruneda, J.M. et al. | 2002
- 151
-
Structural properties of hydrogen-induced platelets in silicon: a Raman scattering studyLavrov, E.V. et al. | 2002
- 155
-
Quadruplevoids in amorphous Si:HKrüger, Thomas et al. | 2002
- 159
-
New hydrogen-related radiation-induced deep-level center in boron-doped siliconYarykin, N. et al. | 2002
- 163
-
Fermi-level dependence of formation of hydrogen molecules in crystalline siliconIshioka, K. et al. | 2002
- 167
-
Defects agglomeration in the vicinity of hydrogen-related vacancy-type complexes in proton-implanted siliconTokmoldin, S.Zh et al. | 2002
- 171
-
Multivacancies trapping hydrogen moleculesMori, T. et al. | 2002
- 174
-
Defect-related photoinduced absorption in amorphous siliconMorgado, E. et al. | 2002
- 178
-
Hydrogen-induced formation of defects nanoclusters in crystalline siliconAbdullin, Kh A. et al. | 2002
- 181
-
Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealingMudryi, A.V. et al. | 2002
- 185
-
Hydrogen enhanced thermal donor formation in p-type Czochralski silicon: application to low temperature active defect-engineeringUlyashin, A.G. et al. | 2002
- 190
-
On defects created in 45keV H--implanted n-type Cz Si: a fluence dependence and isochronal annealing studyDeenapanray, Prakash N.K. et al. | 2002
- 193
-
DLTS study of defects in hydrogen plasma treated p-type siliconWu, L. et al. | 2002
- 197
-
Evidence for H2* trapped by carbon impurities in siliconHourahine, B. et al. | 2002
- 202
-
The strange behavior of interstitial H2 molecules Si and GaAsEstreicher, S.K. et al. | 2002
- 206
-
Raman scattering study of vacancy-hydrogen related defects in siliconLavrov, E.V. et al. | 2002
- 210
-
On the nature of hydrogen-related centers in p-type irradiated siliconFeklisova, O. et al. | 2002
- 213
-
Simulation of hydrogen penetration in silicon under wet chemical etchingFeklisova, O. et al. | 2002
- 216
-
Complexes of point defects and impurities in electron-irradiated CZ-Si doped with hydrogenNakanishi, A. et al. | 2002
- 220
-
Temperature dependences of line widths and peak positions of optical absorption peaks due to localized vibration of hydrogen SiSuezawa, M. et al. | 2002
- 224
-
Complexes of point defects and hydrogen generated by electron-irradiation of hydrogenated Si at low temperaturesSuezawa, M. et al. | 2002
- 228
-
Observation of two coupled defect levels on the hydrogen-passivated Si (100) surfaceReddy, A.J. et al. | 2002
- 232
-
Terahertz emission from silicon doped by shallow impuritiesHübers, H.-W. et al. | 2002
- 236
-
Mobility of interstitial B in Si analyzed by a stochastic reorientation modelIttermann, B. et al. | 2002
- 240
-
Stress-induced splitting of the electronic level related to a platinum-hydrogen complex in siliconFukuda, K. et al. | 2002
- 244
-
Valence force field analysis on nitrogen in siliconHarada, H. et al. | 2002
- 248
-
Spectroscopic characterization of implanted boron in microcrystalline silicon by b-NMRMai, F. et al. | 2002
- 253
-
Magnetic resonance and FTIR studies of shallow donor centers in hydrogenated Cz-siliconLanghanki, B. et al. | 2002
- 257
-
P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputteringOhmura, Y. et al. | 2002
- 261
-
Dopant boron concentration dependence on electron irradiation enhanced defects in Czochralski siliconTamano, T. et al. | 2002
- 265
-
Interstitial carbon reactions in n-Si induced by high-energy proton irradiationKono, K. et al. | 2002
- 268
-
On the correlation character between the structure perfection and electroluminescent properties of terbium doped silicon monoxide filmsKhomchenko, V.S. et al. | 2002
- 272
-
The control mechanism of the impurity agglomeration triggered by ion impactsNakagawa, S.T. et al. | 2002
- 276
-
Optical absorption peaks observed in electron-irradiated n-type SiSuezawa, M. et al. | 2002
- 280
-
Essential difference in concentration profile of Au in Si after annealing above or below 850(degree)CMorooka, Masami et al. | 2002
- 284
-
Interaction between self-interstitials and the oxygen dimer in siliconLindström, J.L. et al. | 2002
- 290
-
Isotopic effects on vibrational modes of thermal double donors in Si and GeMurin, L.I. et al. | 2002
- 294
-
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEMDe Gryse, O. et al. | 2002
- 298
-
Effect of oxygen on exciton transitions in siliconSafonov, A.N. et al. | 2002
- 301
-
Disturbance of oxygen by isovalent impurity atoms in siliconKhirunenko, L.I. et al. | 2002
- 305
-
Over-coordinated oxygen in the interstitial carbon-oxygen complexCoutinho, J. et al. | 2002
- 309
-
Expanded model for anharmonic vibrational excitation of oxygen in siliconYamada-Kaneta, H. et al. | 2002
- 313
-
The effect of high temperature-high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski siliconLondos, C.A. et al. | 2002
- 317
-
Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogenMisiuk, A. et al. | 2002
- 321
-
Incorporation of oxygen or di-hydrogen in silicon monovacancy: spin-resonance study of defect excited stateMchedlidze, T. et al. | 2002
- 325
-
Thermal donors and radiation-induced defect states in transmutation doped gamma-irradiated siliconBudzulyak, S.I. et al. | 2002
- 329
-
Ab initio study of atomic oxygen adsorption on the Si(111)7x7 surfaceCaldas, M.J. et al. | 2002
- 333
-
Defects and their influence on the luminescence of rare-earth ions implanted in single crystal SiSobolev, N.A. et al. | 2002
- 337
-
Time-resolved investigation of the mid-infrared-induced enhancement of Er3+ emission in SiForcales, M. et al. | 2002
- 340
-
Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline siliconVinh, N.Q. et al. | 2002
- 344
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Erbium in SiOx environment: ways to improve the 1.54(micro)m emissionKocher, G. et al. | 2002
- 348
-
Excitation of Si:Er with sub-band-gap energiesKlik, M.A.J. et al. | 2002
- 350
-
Shallow donors in silicon coimplanted with rare-earth ions and oxygenEmtsev, V.V. et al. | 2002
- 354
-
Site-selective excitation of Er3+ ions in oxygen-rich siliconKozanecki, A. et al. | 2002
- 357
-
Erbium excitation across the bulk of silicon wafer: an effect of p-n junction at Si-Si:Er interfaceVinh, N.Q. et al. | 2002
- 361
-
Electrically active centers in light emitting Si:Er-Si structures grown by the sublimation MBE methodShmagin, V.B. et al. | 2002
- 365
-
Light emission from erbium doped nanostructures embedded in silicon microcavitiesBagraev, N.T. et al. | 2002
- 369
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Erbium in Si and GaN: extended versus point defectsCitrin, P.H. et al. | 2002
- 374
-
Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin filmsLosurdo, M. et al. | 2002
- 378
-
Determination of the atomic configuration of Er-O complexes in silicon by the super-cell FLAPW methodHashimoto, M. et al. | 2002
- 382
-
Study of Er-related defects in a-Si:H(Er)-c-n-Si heterostructures by thermally activated current spectroscopyVovk, Ja et al. | 2002
- 387
-
Spectroscopic characterisation of the erbium impurity in crystalline semiconductorsAmmerlaan, C.A.J. et al. | 2002
- 391
-
Ultra-fast diffusion mechanism of the late 3d transition metal impurities in siliconKamon, Y. et al. | 2002
- 396
-
Nitrogen effect on gold diffusion in Cz SiParakhonsky, A.L. et al. | 2002
- 400
-
New electron spin resonance spectra from iron-vacancy pair in silicon: II. Hyperfine interactions and isotopic effectMchedlidze, T. et al. | 2002
- 404
-
Evolution of copper-hydrogen-related defects in siliconKnack, S. et al. | 2002
- 408
-
Electronic and atomic structure of transition-metal-hydrogen complexes in siliconHuy, P.T. et al. | 2002
- 414
-
Time-resolved photoluminescence study of Si:AgVinh, N.Q. et al. | 2002
- 418
-
Detection of diffusional jumps of interstitial Fe in silicon by Mössbauer spectroscopyGunnlaugsson, H.P. et al. | 2002
- 421
-
New electron spin resonance spectra from iron-vacancy pair in silicon: I. Defect with two values for the spinMchedlidze, T. et al. | 2002
- 424
-
Theoretical study of pressure-induced negative effective U of a tungsten atom in crystalline siliconKitagawa, I. et al. | 2002
- 427
-
Precipitation-enhanced diffusion of nickel in dislocation-free silicon studied by in-diffusion and annealing processesTanaka, Shuji et al. | 2002
- 431
-
Diffusion of 195Au in amorphous Si3N4 and Si4N3Voss, T. et al. | 2002
- 434
-
Properties of Cr in hydrogenated SiSato, Y. et al. | 2002
- 438
-
Optical absorption spectra of platinum-related defects in siliconFukata, N. et al. | 2002
- 442
-
Identification of getter defects in high-energy self-implanted silicon at Rp-2Krause-Rehberg, R. et al. | 2002
- 446
-
Nanoindentation pop-in effect in semiconductorsLeipner, H.S. et al. | 2002
- 450
-
Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending methodWang, G. et al. | 2002
- 454
-
Self-interstitial clusters in siliconEberlein, T.A.G. et al. | 2002
- 458
-
Self-interstitial-oxygen related defects in low-temperature irradiated SiKhirunenko, L.I. et al. | 2002
- 462
-
Divacancies in proton irradiated silicon: characterization and annealing mechanismsPoirier, R. et al. | 2002
- 465
-
Do we know the energy levels of radiation defects in silicon?Makarenko, L.F. et al. | 2002
- 470
-
Dopant interaction with a dislocation in silicon: local and non-local effectsAntonelli, Alex et al. | 2002
- 474
-
Modeling the subsurface region of Cz-Si wafers with properly fabricated bulk FZ-Si samplesMchedlidze, T. et al. | 2002
- 477
-
High-energy proton radiation induced defects in tin-doped n-type siliconSimoen, E. et al. | 2002
- 481
-
Interface strain in thermal Si-SiO2 analysed by frequency-dependent electron spin resonancePierreux, Dieter et al. | 2002
- 485
-
C-V and G-V characterization of defects in ultrathin SiO2 thermally grown on RF plasma-hydrogenated siliconAlexandrova, S. et al. | 2002
- 489
-
Electrically active centers in partial dislocations in semiconductorsJusto, Joaao F. et al. | 2002
- 493
-
Kinetic Monte Carlo study of dislocation motion in silicon: soliton model and hydrogen enhanced glideScarle, S. et al. | 2002
- 497
-
Do we really need configuration interaction theory to understand the negative vacancy in silicon?Gerstmann, U. et al. | 2002
- 502
-
Equilibrium concentration of vacancies under the anisotropic stress field around and impurityTanahashi, K. et al. | 2002
- 506
-
Mechanisms of capture- and recombination-enhanced defect reactions in semiconductorsShinozuka, Yuzo et al. | 2002
- 510
-
Dynamics of Si self-interstitial clustering using the fast-diffusing I3 clusterGharaibeh, M. et al. | 2002
- 513
-
Defect reactions associated with the dissociation of the phosphorus-vacancy pair in siliconMarkevich, V.P. et al. | 2002
- 517
-
Enhanced oxygen dimer and thermal donor formation in irradiated germanium studied by local vibrational mode spectroscopyVanmeerbeek, P. et al. | 2002
- 521
-
Correlated to random transition of ionized impurity distribution in n-type Ge:(As, Ga)Kato, Jiro et al. | 2002
- 525
-
Ion-implantation and diffusion behaviour of boron in germaniumUppal, Suresh et al. | 2002
- 529
-
Vacancies and self-interstitials in germanium: a picture derived from radioactive probesSielemann, R. et al. | 2002
- 535
-
The interstitial boron and the boron-germanium complex in silicon-germanium crystalsHattendorf, J. et al. | 2002
- 539
-
Interstitial oxygen in GeSi alloysYonenaga, I. et al. | 2002
- 542
-
Self-diffusion of 71Ge in Si-GeStrohm, A. et al. | 2002
- 546
-
Low temperature muonium behaviour in Cz-Si and Cz-Si0.91Ge0.09King, P.J.C. et al. | 2002
- 550
-
Interaction of divacancies with Ge atoms in Si1-xGexKhirunenko, L. et al. | 2002
- 554
-
High resolution minority carrier transient spectroscopy of defects in Si and Si-SiGe quantum wellsEvans-Freeman, J.H. et al. | 2002
- 558
-
Alloy fluctuations in Si1-xGex crystalsKocher, G. et al. | 2002
- 561
-
The new assignment of hyperfine parameters for deep defects in diamondGerstmann, U. et al. | 2002
- 565
-
Transition metals in diamond: Do chemical trends arise from ab initio calculations?Johnston, Karl et al. | 2002
- 569
-
Annealing of monovacancies in electron and g-irradiated diamondsDannefaer, S. et al. | 2002
- 573
-
Defect-induced graphitisation in diamond implanted with light ionsGippius, A.A. et al. | 2002
- 577
-
Modelling electron energy-loss spectra of dislocations in silicon and diamondFall, C.J. et al. | 2002
- 581
-
The variation of optical absorption of CVD diamond as a function of temperaturePiccirillo, Clara et al. | 2002
- 585
-
Photoelectrical properties of the 1.682-eV and 3H centres in diamondIakoubovskii, Konstantin et al. | 2002
- 589
-
Photo-EPR studies on the AB3 and AB4 nickel-related defects in diamondPereira, R.N. et al. | 2002
- 593
-
Electrically detected magnetic resonance studies of phosphorus doped diamondGraf, T. et al. | 2002
- 598
-
High-temperature high-pressure annealing of diamond - Small-angle X-ray scattering and optical studyShiryaev, A.A. et al. | 2002
- 604
-
Volume expansion and stress tensors for self-interstitial aggregates in diamondGoss, J.P. et al. | 2002
- 608
-
Modeling fluorescence of single nitrogen-vacancy defect centers in diamondNizovtsev, A.P. et al. | 2002
- 612
-
Irradiation effects in semiconducting diamondsKristianpoller, N. et al. | 2002
- 616
-
Nickel related defects in diamond: the 2.51eV bandNazaré, M.H. et al. | 2002
- 621
-
Positively charged carbon vacancy in 6H-SiC: EPR studyBratus, V.Ya et al. | 2002
- 625
-
The annealing product of the silicon vacancy in 6H-SiCLingner, Th et al. | 2002
- 629
-
Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopyRedmann, F. et al. | 2002
- 633
-
Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbideWeidner, M. et al. | 2002
- 637
-
Calculation of hyperfine parameters of positively charged carbon vacancy in SiCPetrenko, T.T. et al. | 2002
- 641
-
DLTS study of defects in 6H- and 4H-SiC created by proton irradiationDavydov, D.V. et al. | 2002
- 645
-
Interstitial-based vacancy annealing in 4H-SiCRauls, E. et al. | 2002
- 649
-
The ground state of silicon vacancies in 6H-SiC and 15R-SiCLingner, Th et al. | 2002
- 652
-
Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ionsOhshima, Takeshi et al. | 2002
- 656
-
Interstitials in SiC: a model for the DII centerMattausch, Alexander et al. | 2002
- 660
-
Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilationKawasuso, A. et al. | 2002
- 664
-
Vacancy type defects in Al implanted 4H-SiC studied by positron annihilation spectroscopySlotte, J. et al. | 2002
- 668
-
Negatively charged vacancy defects in 6H-SiC after low-energy proton implantation and annealingBarthe, M.-F. et al. | 2002
- 671
-
Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiCKonovalov, V.V. et al. | 2002
- 675
-
Defects in 4H silicon carbideBergman, J.P. et al. | 2002
- 680
-
Neutral and negatively charged silicon vacancies in neutron irradiated SiC: a high-field electron paramagnetic resonance studyBaranov, P.G. et al. | 2002
- 684
-
Detection of defects in SiC crystalline films by Raman scatteringNakashima, S. et al. | 2002
- 687
-
Electrical and optical properties of erbium-related centers in 6H silicon carbideKlettke, O. et al. | 2002
- 691
-
Contactless studies of semi-insulating 4H-SiCCarlos, W.E. et al. | 2002
- 695
-
Influence of annealing temperature upon deep levels in 6H SiCPerjeru, F. et al. | 2002
- 698
-
EPR and photoluminescence studies of semi-insulating 4H-SiC samplesKalabukhova, E.N. et al. | 2002
- 702
-
Defect correlated emmission and electrical properties of 4H- and 6H-SiC epitaxial layers doped by nuclear transmutation doping (NTD)Heissenstein, H. et al. | 2002
- 706
-
Characterization of deep centers in bulk n-type 4H-SiCFang, Z.-Q. et al. | 2002
- 710
-
Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbideFung, S. et al. | 2002
- 714
-
Luminescence characterization of titanium related defects in 6H-SiCSuleimanov, Yu M. et al. | 2002
- 718
-
Beryllium implantation induced deep levels in 6H-silicon carbideChen, X.D. et al. | 2002
- 722
-
Passivation of p-type dopants in 4H-SiC by hydrogenAradi, B. et al. | 2002
- 726
-
First-principles studies of Ti impurities in SiCBarbosa, K.O. et al. | 2002
- 730
-
Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPRIrmscher, K. et al. | 2002
- 734
-
Diffusion of boron in silicon carbideRüschenschmidt, K. et al. | 2002
- 738
-
Identification of arsenic antisite defects with EL2 by nanospectroscopic studies of individual centersHida, Akira et al. | 2002
- 742
-
Study of As self-diffusion in GaAs using sulfur as a tracerEngler, N. et al. | 2002
- 745
-
On the microscopic structure of the EL6 defect in GaAsSteinegger, Th et al. | 2002
- 749
-
Magneto-optical and ODEPR investigations of native defects in substrate-free LT-MBE grown GaAsTkach, I. et al. | 2002
- 753
-
On the problem of the EL2 structure in semi-insulating GaAs: high-frequency ODEPR-ODENDOR measurements in W-bandTkach, I. et al. | 2002
- 757
-
Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructuresYastrubchak, O. et al. | 2002
- 761
-
Passivation of growth defects in GaAs-AlGaAs multiple quantum well structures by CF4 plasmaShamirzaev, T.S. et al. | 2002
- 765
-
Exciton localization dynamics due to intrinsic interface defects within growth island terraces of all-binary GaAs-AlAs quantum wellsFujiwara, K. et al. | 2002
- 769
-
Metastable irradiation induced defects in Be doped Al0.5Ga0.5As MBE layersSzatkowski, J. et al. | 2002
- 772
-
Raman probing of the wave function of collective excitations in the presence of disorderPusep, Yu A. et al. | 2002
- 776
-
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour depositionDeenapanray, P.N.K. et al. | 2002
- 780
-
Acceptor-hydrogen complexes in semiconductors under pressureMccluskey, M.D. et al. | 2002
- 784
-
Donor-acceptor recombination in d-doped type II GaAs-AlAs superlatticesGulyaev, D.V. et al. | 2002
- 788
-
The DX--centre formation at high electric fields in planar-doped GaAs:SiAsche, M. et al. | 2002
- 792
-
Study of vacancy-type defects after Cu diffusion in GaAsBondarenko, V. et al. | 2002
- 796
-
Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxyFujiwara, Y. et al. | 2002
- 800
-
Investigation of Cu-related deep levels in semi-insulating GaAs by PICTSZychowitz, G. et al. | 2002
- 804
-
The effect of Si site-switching in GaAs on electrical properties and potential fluctuationSvavarsson, H.G. et al. | 2002
- 808
-
Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs:BeSpecht, P. et al. | 2002
- 812
-
Native point defects in non-stoichiometric GaAs doped with berylliumGebauer, J. et al. | 2002
- 816
-
Rhodium-related deep levels in n-type MOCVD GaAsZafar Iqbal, M. et al. | 2002
- 820
-
Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin filmsBak-Misiuk, J. et al. | 2002
- 823
-
Carbon incorporation during growth of GaAs at low temperaturesHerfort, J. et al. | 2002
- 827
-
Study of depth distribution of metastable hydrogen-related defects in n-type GaAsSoltanovich, O.A. et al. | 2002
- 831
-
Zinc diffusion enhanced Ga diffusion in GaAs isotope heterostructuresBracht, H. et al. | 2002
- 835
-
Vibrational modes of a hydrogen-impurity centre in LEC-GaAsUlrici, W. et al. | 2002
- 839
-
Nitrogen solubility and N-induced defect complexes in epitaxial GaAs:NZhang, S.B. et al. | 2002
- 843
-
Plasmon-like oscillations of the electrons localized by the DX centers in doped AlxGa1-xAsPusep, Yu A. et al. | 2002
- 846
-
Defect engineering in III-V ternary alloys: effects of strain and local charge on the formation of substitutional and interstitial native defectsBonapasta, A.Amore et al. | 2002
- 850
-
Interplay of nitrogen and hydrogen in InxGa1-xAs1-yNy-GaAs heterostructuresPolimeni, A. et al. | 2002
- 854
-
Mechanism of zinc diffusion in gallium antimonideNicols, S.P. et al. | 2002
- 858
-
Carbon-doped MOCVD InP is semi-insulating up to 700(degree)CNewman, R.C. et al. | 2002
- 862
-
Motional properties of positive muonium in gallium III-V compoundsLichti, R.L. et al. | 2002
- 866
-
Substitutional incorporation of arsenic from GaAs substrates into MOVPE grown InSbBi thin filmsWagener, M.C. et al. | 2002
- 870
-
Deep-level defects in MBE-grown Ga(As,N) layersKrispin, P. et al. | 2002
- 874
-
Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantationJasinski, J. et al. | 2002
- 877
-
Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRAAlt, H.Ch et al. | 2002
- 881
-
Partly filled impurity band formation in compensated InP:MnMikhrin, S.B. et al. | 2002
- 884
-
Optically induced Auger recombination of Yb3+ in p-type InPKlik, M.A.J. et al. | 2002
- 888
-
Dopant interactions and Mg segregation in (AlxGa1-x)0.5In0.5P heterostructuresGrillot, P.N. et al. | 2002
- 891
-
Luminescence properties of Er,O-codoped GaAs-GaInP double heterostructures grown by organometallic vapor phase epitaxyKoizumi, A. et al. | 2002
- 895
-
Diffusion of zinc in gallium phosphide under defect-free phosphorus-rich conditionsPöpping, J. et al. | 2002
- 899
-
Defect analysis and engineering in ZnOVan de Walle, Chris G. et al. | 2002
- 904
-
Electronic structure and ferromagnetism of transition-metal-impurity-doped zinc oxideSato, K. et al. | 2002
- 908
-
Magnetic resonance experiments on the green emission in undoped ZnO crystalsLeiter, F. et al. | 2002
- 912
-
First-principles study of the compensation mechanism in N-doped ZnOLee, Eun-Cheol et al. | 2002
- 916
-
Control of valence states for ZnS by triple-codoping methodYamamoto, Tetsuya et al. | 2002
- 920
-
Probing the shallow-donor muonium wave function in ZnO and CdS via transferred hyperfine interactionsLord, J.S. et al. | 2002
- 924
-
Investigation of the defect structure in Cd1-xZnxTe by positron lifetime spectroscopyMartyniuk, M. et al. | 2002
- 928
-
Influence of the molecular spin-orbit interaction on the orbital triplet levels 4T1 and 4T2 of Mn2+ in ZnSParrot, R. et al. | 2002
- 932
-
High temperature electrical conductivity of undoped ZnSLott, K. et al. | 2002
- 935
-
Mechanism of laser damage of transparent semiconductorsGnatyuk, V.A. et al. | 2002
- 939
-
Stability of chlorine-based complex defects in group II-VI semiconductorsValdna, V. et al. | 2002
- 942
-
Excitation mechanism of blue anti-Stokes and 2.4(micro)m infrared emission in ZnSe:CrIvanov, V.Yu et al. | 2002
- 945
-
Donor-acceptor pair transitions in ZnO substrate materialThonke, K. et al. | 2002
- 949
-
Optical properties and surface morphology of Li-doped ZnO thin films deposited on different substrates by DC magnetron sputtering methodMohamed, Galal A. et al. | 2002
- 954
-
Metastable defect characterization in Cd0.9Mn0.1Te:InPlaczek-Popko, E. et al. | 2002
- 958
-
Vacancies in CdTe: experiment and theoryLany, S. et al. | 2002
- 963
-
The strange diffusivity of Ag atoms in CdTeWolf, H. et al. | 2002
- 967
-
Investigation of lattice defects by means of their drift under electric fieldKorsunska, N.E. et al. | 2002
- 971
-
Laser shock wave stimulated defects in p-CdTe crystalsBaidullaeva, A. et al. | 2002
- 976
-
Magnetic resonance studies of ZnOCarlos, W.E. et al. | 2002
- 980
-
Defect identification by means of electric field gradient calculationLany, S. et al. | 2002
- 985
-
Photoluminescence studies in ZnO samplesBoemare, C. et al. | 2002
- 989
-
Defect reactions of implanted Li in ZnSe observed by b-NMRKroll, F. et al. | 2002
- 993
-
Control of the electric and magnetic properties of ZnO filmsTabata, H. et al. | 2002
- 999
-
Modulation of deep level structures in SiO2 upon nitrogen incorporationJeong, Sukmin et al. | 2002
- 1003
-
Non-linear 2-mm waveband EPR spectroscopy of spin-charge excitations in organic semiconductorsKrinichnyi, V.I. et al. | 2002
- 1007
-
Effects of codoping using Na and O on Cu-S divacancy in p-type CuInS2Yamamoto, Tetsuya et al. | 2002
- 1011
-
Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation lifetimeShpotyuk, O.I. et al. | 2002
- 1015
-
Energy levels of native defects in zinc germanium diphosphideGehlhoff, W. et al. | 2002
- 1020
-
NMR investigation of CdF2:GaHilger, D. et al. | 2002
- 1023
-
Scattering of charge carriers in semiconductors: models and their criteriaMikhnovich, V.V. et al. | 2002
- 1027
-
Mg-H and Be-H complexes in c-BNPinho, N.M.C. et al. | 2002
- 1031
-
Influence of substitution of P by As on exciton and biexciton states in Zn(P1-xAsx)2 crystalsYeshchenko, O.A. et al. | 2002
- 1035
-
DX center gratings in real-time holographyKazanskii, S.A. et al. | 2002
- 1038
-
Dielectric response of semiconducting and photochromic CdF2 on microwavesKazanskii, S.A. et al. | 2002
- 1042
-
Stacking faults and excitons in AgIMochizuki, S. et al. | 2002
- 1046
-
Valence-change- and defect-induced white luminescence of Eu2O3Mochizuki, S. et al. | 2002
- 1050
-
Defects in heteroepitaxial CeO2-YSZ-Si(001) films by precise X-ray rocking curve distribution fitnessChen, Chun-Hua et al. | 2002
- 1054
-
Influence of semiconductor film structural imperfection on the physicochemical interaction rate in As2S3-Cu systemSopinskyy, M.V. et al. | 2002
- 1057
-
Native defects and rare-earth impurities interaction in IV-VI crystalsZayachuk, D. et al. | 2002
- 1061
-
Quantum chemical modeling of chlorine-doped defects in a-SeZyubin, A.S. et al. | 2002
- 1065
-
Photoluminescence of vacuum-deposited CuGaS2 thin filmsBotha, J.R. et al. | 2002
- 1069
-
Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputteringHe, Y.B. et al. | 2002
- 1074
-
Characterization of RF reactively sputtered Cu-In-S thin filmsHe, Y.B. et al. | 2002
- 1078
-
EDMR of MEH-PPV LEDsSilva, G.B. et al. | 2002
- 1081
-
The role of structural properties and defects for the performance of Cu-chalcopyrite-based thin-film solar cellsSchock, Hans Werner et al. | 2002
- 1086
-
Positive and negative magnetoresistance in the system silver-seleniumBeck, Gesa et al. | 2002
- 1090
-
Benefits of microscopy with super resolutionKisielowski, C. et al. | 2002
- 1097
-
Role of metal impurities in the growth of chains of crystalline-silicon nanospheresKohno, H. et al. | 2002
- 1100
-
An electron spin resonance study of Si1-xGex alloy nanocrystals embedded in SiO2 matrices-effects of P dopingToshikiyo, Kimiaki et al. | 2002
- 1104
-
Single impurity centers embedded in self-assembled silicon microcavitiesBagraev, N.T. et al. | 2002
- 1108
-
Defect related photoluminescence in Si wiresTorchynska, T. et al. | 2002
- 1113
-
The influence of Coulomb effects on the electron emission and capture in InGaAs-GaAs self-assembled quantum dotsSobolev, M.M. et al. | 2002
- 1117
-
Electronic transport through N quantum dots under DC biasShangguan, W.Z. et al. | 2002
- 1121
-
Excitation of Tm3+ by the energy transfer from Si nanocrystalsWatanabe, Kei et al. | 2002
- 1125
-
Formation energy of vacancy in silicon determined by a new quenching methodFukata, N. et al. | 2002
- 1129
-
Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructuresYassievich, I.N. et al. | 2002
- 1133
-
Defect diagnostics in multicrystalline silicon using scanning techniquesTarasov, I. et al. | 2002
- 1137
-
Resonance ultrasonic diagnostics of defects in full-size silicon wafersBelyaev, A. et al. | 2002
- 1141
-
A new approach to analysis of mosaic structure peculiarities of gallium nitride epilayersKolmakov, A.G. et al. | 2002
- 1145
-
The strain field around a single point defect in semiconductors spatially resolved by electric field modulation scanning tunneling spectro-microscopyHida, Akira et al. | 2002
- 1150
-
Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSeYonenaga, I. et al. | 2002
- 1153
-
Capacitance X-ray absorption fine structure measurement using scanning probe A new method for local structure analysis of surface defectsIshii, Masashi et al. | 2002
- 1157
-
Positron lifetime beam for defect studies in thin epitaxial semiconductor structuresLaakso, A. et al. | 2002
- 1161
-
Measurement of diffusion lengths in quaternary semiconducting thin layers by spectrum imagingWalther, T. et al. | 2002
- 1165
-
Trapped carrier electroluminescence (TraCE)-A novel method for correlating electrical and optical measurementsCarlsson, F.H.C. et al. | 2002
- 1169
-
Defects related to DRAM leakage current studied by electrically detected magnetic resonanceUmeda, T. et al. | 2002
- 1173
-
Process-induced defects in nitrogen doped Czochralski silicon in diode processesLu, J. et al. | 2002
- 1177
-
n-Channel conductance spectroscopy of deep defects in low temperature grown GaAsSteen, C. et al. | 2002
- 1181
-
Deep-level transient spectroscopy analysis of proton-irradiated n+-p InGaP solar cellsDharmarasu, N. et al. | 2002
- 1185
-
Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiationOhyama, H. et al. | 2002
- 1189
-
Defect characterization by DLTS of AlGaN UV Schottky photodetectorsLegodi, M.J. et al. | 2002
- 1193
-
Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodesHori, A. et al. | 2002
- 1197
-
Production and properties of p-n junctions in reactively sputtered ZnOTüzemen, S. et al. | 2002
- 1201
-
Defects in scintillators based on ZnS-ZnSe solid solutionsChristich, O.A. et al. | 2002
- 1205
-
Interface defects in integrated hybrid semiconductors by wafer bondingKopperschmidt, P. et al. | 2002
- 1209
-
Effect of proton irradiation on the characteristics of GaAs Schottky barrier diodesSumathi, R.R. et al. | 2002
- 1213
-
Studies on the application of CVD diamonds as active detectors of ionising radiationMarczewska, B. et al. | 2002
- 1217
-
Radiation defects in STI silicon diodes and their effects on device performanceHayama, K. et al. | 2002
- 1222
-
Fabrication of periodic nanohole multilayer structure on silicon surface toward photonic crystalOhno, Y. et al. | 2002
- 1226
-
Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiationOhyama, H. et al. | 2002
- 1230
-
List of Contributors| 2002
- 1237
-
Subject Index| 2002