The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
<
Volume 432,
Issue pb
Volume 432,
Issue pa
Volume 427,
Issue pb
Volume 427,
Issue pa
Volume 424,
Issue 3
Volume 424,
Issue 2
Volume 424,
Issue 1
Volume 421,
Issue b
Volume 421,
Issue a
Volume 418,
Issue a
Volume 285,
Issue pb
Volume 258,
Issue 24
Volume 258,
Issue 23
Volume 258,
Issue 22
Volume 258,
Issue 21
Volume 258,
Issue 20
Volume 258,
Issue 19
Volume 258,
Issue 18
Volume 258,
Issue 17
Volume 258,
Issue 16
Volume 258,
Issue 15
Volume 258,
Issue 14
Volume 258,
Issue 13
Volume 258,
Issue 12
Volume 258,
Issue 11
Volume 258,
Issue 10
Volume 258,
Issue 9
Volume 258,
Issue 8
Volume 258,
Issue 7
Volume 258,
Issue 6
Volume 258,
Issue 5
Volume 258,
Issue 4
Volume 258,
Issue 3
Volume 258,
Issue 2
Volume 258,
Issue 1
Volume 257,
Issue 24
Volume 257,
Issue 23
Volume 257,
Issue 22
Volume 257,
Issue 21
Volume 257,
Issue 20
Volume 257,
Issue 19
Volume 257,
Issue 18
Volume 257,
Issue 17
Volume 257,
Issue 16
Volume 257,
Issue 15
Volume 257,
Issue 14
Volume 257,
Issue 13
Volume 257,
Issue 12
Volume 257,
Issue 11
Volume 257,
Issue 10
Volume 257,
Issue 9
Volume 257,
Issue 8
Volume 257,
Issue 7
Volume 257,
Issue 6
Volume 257,
Issue 5
Volume 257,
Issue 4
Volume 257,
Issue 3
Volume 257,
Issue 2
Volume 257,
Issue 1
Volume 256,
Issue 24
Volume 256,
Issue 23
Volume 256,
Issue 22
Volume 256,
Issue 21
Volume 256,
Issue 20
Volume 256,
Issue 19
Volume 256,
Issue 18
Volume 256,
Issue 17
Volume 256,
Issue 16
Volume 256,
Issue 15
Volume 256,
Issue 14
Volume 256,
Issue 13
Volume 256,
Issue 12
Volume 256,
Issue 11
Volume 256,
Issue 10
Volume 256,
Issue 9
Volume 256,
Issue 8
Volume 256,
Issue 7
Volume 256,
Issue 6
Volume 256,
Issue 5
Volume 256,
Issue 4
Volume 256,
Issue 3
Volume 256,
Issue 2
Volume 256,
Issue 1
Volume 255,
Issue 24
Volume 255,
Issue 23
Volume 255,
Issue 22
Volume 255,
Issue 21
Volume 255,
Issue 20
Volume 255,
Issue 19
Volume 255,
Issue 18
Volume 255,
Issue 17
Volume 255,
Issue 16
Volume 255,
Issue 15
Volume 255,
Issue 14
Volume 255,
Issue 13
Volume 255,
Issue 12
Volume 255,
Issue 11
Volume 255,
Issue 10
Volume 255,
Issue 9
Volume 255,
Issue 8
Volume 255,
Issue 7
Volume 255,
Issue 6
Volume 255,
Issue 5
Volume 255,
Issue 4
Volume 255,
Issue 3
Volume 255,
Issue 2
Volume 255,
Issue 1
Volume 254,
Issue 24
Volume 254,
Issue 23
Volume 254,
Issue 22
Volume 254,
Issue 21
Volume 254,
Issue 20
Volume 254,
Issue 19
Volume 254,
Issue 18
Volume 254,
Issue 17
Volume 254,
Issue 16
Volume 254,
Issue 15
Volume 254,
Issue 14
Volume 254,
Issue 13
Volume 254,
Issue 12
Volume 254,
Issue 11
Volume 254,
Issue 10
Volume 254,
Issue 9
Volume 254,
Issue 8
Volume 254,
Issue 7
Volume 254,
Issue 6
Volume 254,
Issue 5
Volume 254,
Issue 4
Volume 254,
Issue 3
Volume 254,
Issue 2
Volume 254,
Issue 1
Volume 253,
Issue 24
Volume 253,
Issue 23
Volume 253,
Issue 22
Volume 253,
Issue 21
Volume 253,
Issue 20
Volume 253,
Issue 19
Volume 253,
Issue 18
Volume 253,
Issue 17
Volume 253,
Issue 16
Volume 253,
Issue 15
Volume 253,
Issue 14
Volume 253,
Issue 13
Volume 253,
Issue 12
Volume 253,
Issue 11
Volume 253,
Issue 10
Volume 253,
Issue 9
Volume 253,
Issue 8
Volume 253,
Issue 7
Volume 253,
Issue 6
Volume 253,
Issue 5
Volume 253,
Issue 4
Volume 253,
Issue 3
Volume 253,
Issue 2
Volume 253,
Issue 1
Volume 252,
Issue 24
Volume 252,
Issue 23
Volume 252,
Issue 22
Volume 252,
Issue 21
Volume 252,
Issue 20
Volume 252,
Issue 19
Volume 252,
Issue 18
Volume 252,
Issue 17
Volume 252,
Issue 16
Volume 252,
Issue 15
Volume 252,
Issue 14
Volume 252,
Issue 13
Volume 252,
Issue 12
Volume 252,
Issue 11
Volume 252,
Issue 10
Volume 252,
Issue 9
Volume 252,
Issue 8
Volume 252,
Issue 7
Volume 252,
Issue 6
Volume 252,
Issue 5
Volume 252,
Issue 4
Volume 252,
Issue 3
Volume 252,
Issue 2
Volume 252,
Issue 1
Volume 251,
Issue 4
Volume 251,
Issue 1
Volume 250,
Issue 4
Volume 250,
Issue 1
Volume 249,
Issue 4
Volume 249,
Issue 1
Volume 248,
Issue 4
Volume 248,
Issue 1
Volume 247,
Issue 4
Volume 247,
Issue 1
Volume 246,
Issue 4
Volume 246,
Issue 3
Volume 246,
Issue 1
Volume 245,
Issue 4
Volume 245,
Issue 1
Volume 244,
Issue 4
Volume 244,
Issue 1
Volume 243,
Issue 4
Volume 243,
Issue 1
Volume 242,
Issue 4
Volume 242,
Issue 3
Volume 242,
Issue 2
Volume 242,
Issue 1
Volume 241,
Issue 4
Volume 241,
Issue 3
Volume 241,
Issue 2
Volume 241,
Issue 1
Volume 240,
Issue 4
Volume 240,
Issue 1
Volume 239,
Issue 4
Volume 239,
Issue 3
Volume 239,
Issue 2
Volume 239,
Issue 1
Volume 238,
Issue 4
Volume 238,
Issue 1
Volume 237,
Issue 4
Volume 237,
Issue 1
Volume 236,
Issue 4
Volume 236,
Issue 1
Volume 235,
Issue 4
Volume 235,
Issue 3
Volume 235,
Issue 2
Volume 235,
Issue 1
Volume 234,
Issue 4
Volume 234,
Issue 1
Volume 233,
Issue 4
Volume 233,
Issue 1
Volume 232,
Issue jun
Volume 232,
Issue 2004
Volume 232,
Issue 15
Volume 231,
Issue jun
Volume 231,
Issue 2004
Volume 231,
Issue 15
Volume 230,
Issue 4
Volume 230,
Issue 1
Volume 229,
Issue 4
Volume 229,
Issue 1
Volume 228,
Issue 4
Volume 228,
Issue 1
Volume 227,
Issue 4
Volume 227,
Issue 1
Volume 226,
Issue 4
Volume 226,
Issue 3
Volume 226,
Issue 1
Volume 225,
Issue 4
Volume 225,
Issue 1
Volume 224,
Issue 4
Volume 224,
Issue 1
Volume 223,
Issue 4
Volume 223,
Issue 3
Volume 223,
Issue 1
Volume 222,
Issue 4
Volume 222,
Issue 1
Volume 221,
Issue 4
Volume 221,
Issue 1
Volume 220,
Issue 4
Volume 220,
Issue 1
Volume 219,
Issue 4
Volume 219,
Issue 3
Volume 219,
Issue 2
Volume 219,
Issue 1
Volume 218,
Issue 4
Volume 218,
Issue 1
Volume 217,
Issue 4
Volume 217,
Issue 1
Volume 216,
Issue spec
Volume 216,
Issue 4
Volume 216,
Issue 1
Volume 215,
Issue spec
Volume 215,
Issue 4
Volume 215,
Issue 1
Volume 214,
Issue 4
Volume 214,
Issue 1
Volume 213,
Issue spec
Volume 212,
Issue spec
Volume 212,
Issue 1
Volume 211,
Issue 4
Volume 211,
Issue 1
Volume 210,
Issue spec
Volume 210,
Issue 4
Volume 210,
Issue 3
Volume 210,
Issue 2
Volume 210,
Issue 1
Volume 209,
Issue 1
Volume 208,
Issue 1
Volume 207,
Issue 4
Volume 207,
Issue 1
Volume 206,
Issue 4
Volume 206,
Issue 1
Volume 205,
Issue 4
Volume 205,
Issue 1
Volume 204,
Issue jan
Volume 204,
Issue 2003
Volume 204,
Issue 15
Volume 203,
Issue jan
Volume 203,
Issue 2003
Volume 203,
Issue 15
Volume 202,
Issue 4
Volume 202,
Issue 3
Volume 202,
Issue 2
Volume 202,
Issue 1
Volume 201,
Issue 4
Volume 201,
Issue 1
Volume 200,
Issue 4
Volume 200,
Issue 1
Volume 199,
Issue 4
Volume 199,
Issue 1
Volume 196,
Issue 4
Volume 196,
Issue 1
Volume 195,
Issue 4
Volume 195,
Issue 1
Volume 194,
Issue 4
Volume 194,
Issue 1
Volume 193,
Issue 4
Volume 193,
Issue 1
Volume 192,
Issue 4
Volume 192,
Issue 1
Volume 191,
Issue 4
Volume 191,
Issue 1
Volume 190,
Issue 4
Volume 190,
Issue 1
Volume 189,
Issue 4
Volume 189,
Issue 3
Volume 189,
Issue 2
Volume 189,
Issue 1
Volume 188,
Issue 4
Volume 188,
Issue 3
Volume 188,
Issue 2
Volume 188,
Issue 1
Volume 187,
Issue 4
Volume 187,
Issue 3
Volume 187,
Issue 2
Volume 187,
Issue 1
Volume 186,
Issue 4
Volume 186,
Issue 1
Volume 185,
Issue 4
Volume 185,
Issue 3
Volume 185,
Issue 2
Volume 185,
Issue 1
Volume 184,
Issue 4
Volume 184,
Issue 1
Volume 183,
Issue 4
Volume 183,
Issue 3
Volume 183,
Issue 2
Volume 183,
Issue 1
Volume 182,
Issue 4
Volume 182,
Issue 3
Volume 182,
Issue 2
Volume 182,
Issue 1
Volume 181,
Issue 4
Volume 181,
Issue 3
Volume 181,
Issue 2
Volume 181,
Issue 1
Volume 180,
Issue 4
Volume 180,
Issue 3
Volume 180,
Issue 2
Volume 180,
Issue 1
Volume 179,
Issue 4
Volume 179,
Issue 1
Volume 178,
Issue 4
Volume 178,
Issue 1
Volume 177,
Issue 4
Volume 177,
Issue 3
Volume 177,
Issue 2
Volume 177,
Issue 1
Volume 175,
Issue 1
Volume 174,
Issue 4
Volume 174,
Issue 3
Volume 174,
Issue 2
Volume 174,
Issue 1
Volume 173,
Issue 4
Volume 173,
Issue 3
Volume 173,
Issue 2
Volume 173,
Issue 1
Volume 172,
Issue 4
Volume 172,
Issue 3
Volume 172,
Issue 2
Volume 172,
Issue 1
Volume 171,
Issue 4
Volume 171,
Issue 3
Volume 171,
Issue 2
Volume 171,
Issue 1
Volume 168,
Issue 4
Volume 168,
Issue 1
Volume 167,
Issue 4
Volume 167,
Issue 3
Volume 167,
Issue 2
Volume 167,
Issue 1
Volume 166,
Issue 4
Volume 166,
Issue 1
Volume 165,
Issue 4
Volume 165,
Issue 3
Volume 165,
Issue 2
Volume 165,
Issue 1
Volume 164,
Issue 4
Volume 164,
Issue 1
Volume 162,
Issue 1
Volume 161,
Issue 4
Volume 161,
Issue 3
Volume 161,
Issue 2
Volume 161,
Issue 1
Volume 160,
Issue 1
Volume 159,
Issue 1
Volume 158,
Issue 4
Volume 158,
Issue 3
Volume 158,
Issue 2
Volume 158,
Issue 1
Volume 157,
Issue 4
Volume 157,
Issue 3
Volume 157,
Issue 2
Volume 157,
Issue 1
Volume 156,
Issue 4
Volume 156,
Issue 1
Volume 153,
Issue 4
Volume 153,
Issue 3
Volume 153,
Issue 2
Volume 153,
Issue 1
Volume 152,
Issue 4
Volume 152,
Issue 3
Volume 152,
Issue 2
Volume 152,
Issue 1
Volume 151,
Issue 4
Volume 151,
Issue 3
Volume 151,
Issue 2
Volume 151,
Issue 1
Volume 150,
Issue complete
Volume 150,
Issue 4
Volume 150,
Issue 1
Volume 149,
Issue 4
Volume 149,
Issue 1
Volume 148,
Issue 4
Volume 148,
Issue 3
Volume 148,
Issue 2
Volume 148,
Issue 1
Volume 147,
Issue 4
Volume 147,
Issue 1
Volume 146,
Issue 4
Volume 146,
Issue 1
Volume 144,
Issue 1
Volume 143,
Issue 4
Volume 143,
Issue 1
Volume 142,
Issue 4
Volume 142,
Issue 1
Volume 141,
Issue 4
Volume 141,
Issue 3
Volume 141,
Issue 2
Volume 141,
Issue 1
Volume 140,
Issue 4
Volume 140,
Issue 3
Volume 140,
Issue 2
Volume 140,
Issue 1
Volume 137,
Issue 4
Volume 137,
Issue 1
Volume 136,
Issue 4
Volume 136,
Issue 3
Volume 136,
Issue 2
Volume 136,
Issue 1
Volume 135,
Issue 4
Volume 135,
Issue 1
Volume 134,
Issue 4
Volume 134,
Issue 1
Volume 133,
Issue 4
Volume 133,
Issue 3
Volume 133,
Issue 2
Volume 133,
Issue 1
Volume 132,
Issue 4
Volume 132,
Issue 1
Volume 130,
Issue 4
Volume 130,
Issue 1
Volume 129,
Issue 4
Volume 129,
Issue 1
Volume 127,
Issue 4
Volume 127,
Issue 1
Volume 126,
Issue 4
Volume 126,
Issue 3
Volume 126,
Issue 2
Volume 126,
Issue 1
Volume 125,
Issue 4
Volume 125,
Issue 3
Volume 125,
Issue 2
Volume 125,
Issue 1
Volume 122,
Issue 4
Volume 122,
Issue 1
Volume 121,
Issue 4
Volume 121,
Issue 1
Volume 120,
Issue 4
Volume 120,
Issue 3
Volume 120,
Issue 2
Volume 120,
Issue 1
Volume 119,
Issue 4
Volume 119,
Issue 3
Volume 119,
Issue 2
Volume 119,
Issue 1
Volume 118,
Issue com
Volume 117,
Issue com
Volume 116,
Issue com
Volume 116,
Issue 1
Volume 115,
Issue 4
Volume 115,
Issue 3
Volume 115,
Issue 2
Volume 115,
Issue 1
Volume 114,
Issue com
Volume 113,
Issue com
Volume 112,
Issue com
Volume 111,
Issue complete
Volume 111,
Issue com
Volume 110,
Issue complete
Volume 110,
Issue com
Volume 110,
Issue 3
Volume 109,
Issue complete
Volume 109,
Issue com
Volume 108,
Issue 4
Volume 108,
Issue 3
Volume 108,
Issue 2
Volume 108,
Issue 1
Volume 107,
Issue com
Volume 106,
Issue com
Volume 105,
Issue com
Volume 104,
Issue com
Volume 103,
Issue 4
Volume 103,
Issue 3
Volume 103,
Issue 2
Volume 103,
Issue 1
Volume 102,
Issue com
Volume 101,
Issue complete
Volume 101,
Issue com
Volume 100,
Issue complete
Volume 100,
Issue com
Volume 99,
Issue 4
Volume 99,
Issue 3
Volume 99,
Issue 2
Volume 99,
Issue 1
Volume 98,
Issue complete
Volume 98,
Issue com
Volume 96,
Issue complete
Volume 96,
Issue com
Volume 95,
Issue complete
Volume 95,
Issue com
Volume 94,
Issue complete
Volume 94,
Issue com
Volume 93,
Issue 4
Volume 93,
Issue 3
Volume 93,
Issue 2
Volume 93,
Issue 1
Volume 92,
Issue 4
Volume 92,
Issue 1
Volume 91,
Issue com
Volume 90,
Issue 4
Volume 90,
Issue 3
Volume 90,
Issue 2
Volume 90,
Issue 1
Volume 89,
Issue 4
Volume 89,
Issue 3
Volume 89,
Issue 2
Volume 89,
Issue 1
Volume 88,
Issue com
Volume 87,
Issue com
Volume 86,
Issue com
Volume 85,
Issue com
Volume 84,
Issue 4
Volume 84,
Issue 3
Volume 84,
Issue 2
Volume 84,
Issue 1
Volume 83,
Issue com
Volume 82,
Issue com
Volume 81,
Issue 4
Volume 81,
Issue 3
Volume 81,
Issue 2
Volume 81,
Issue 1
Volume 80,
Issue complete
Volume 80,
Issue com
Volume 79,
Issue complete
Volume 79,
Issue com
Volume 78,
Issue 4
Volume 78,
Issue 3
Volume 78,
Issue 2
Volume 78,
Issue 1
Volume 77,
Issue complete
Volume 77,
Issue com
Volume 77,
Issue 2
Volume 76,
Issue complete
Volume 76,
Issue com
Volume 76,
Issue 2
Volume 75,
Issue ii
Volume 75,
Issue com
Volume 75,
Issue 4
Volume 75,
Issue 1
Volume 74,
Issue i
Volume 74,
Issue 4
Volume 74,
Issue 3
Volume 74,
Issue 2
Volume 74,
Issue 1
Volume 73,
Issue complete
Volume 72,
Issue 4
Volume 72,
Issue 3
Volume 72,
Issue 2
Volume 72,
Issue 1
Volume 71,
Issue part
Volume 71,
Issue com
Volume 71,
Issue b
Volume 71,
Issue a
Volume 70,
Issue part
Volume 70,
Issue com
Volume 70,
Issue b
Volume 70,
Issue a
Volume 69,
Issue 4
Volume 69,
Issue 1
Volume 68,
Issue 4
Volume 68,
Issue 3
Volume 68,
Issue 2
Volume 68,
Issue 1
Volume 67,
Issue com
Volume 67,
Issue 4
Volume 67,
Issue 1
Volume 66,
Issue com
Volume 65,
Issue com
Volume 64,
Issue 4
Volume 64,
Issue 3
Volume 64,
Issue 2
Volume 64,
Issue 1
Volume 63,
Issue 4
Volume 63,
Issue 1
Volume 62,
Issue 4
Volume 62,
Issue 3
Volume 62,
Issue 2
Volume 62,
Issue 1
Volume 61,
Issue 4
Volume 61,
Issue 1
Volume 60,
Issue 4
Volume 60,
Issue 1
Volume 59,
Issue 4
Volume 59,
Issue 3
Volume 59,
Issue 2
Volume 59,
Issue 1
Volume 55,
Issue 4
Volume 55,
Issue 3
Volume 55,
Issue 2
Volume 55,
Issue 1
Volume 52,
Issue 4
Volume 52,
Issue 2
Volume 52,
Issue 1
Volume 51,
Issue 4
Volume 51,
Issue 3
Volume 51,
Issue 2
Volume 51,
Issue 1
Volume 50,
Issue 4
Volume 50,
Issue 1
Volume 49,
Issue complete
Volume 48,
Issue complete
Volume 47,
Issue 4
Volume 47,
Issue 3
Volume 47,
Issue 2
Volume 47,
Issue 1
Volume 46,
Issue 4
Volume 46,
Issue 1
Volume 45,
Issue 4
Volume 45,
Issue 3
Volume 45,
Issue 1
Volume 44,
Issue 4
Volume 44,
Issue 3
Volume 44,
Issue 2
Volume 44,
Issue 1
Volume 43,
Issue 4
Volume 43,
Issue 1
Volume 40,
Issue 4
Volume 40,
Issue 3
Volume 40,
Issue 2
Volume 40,
Issue 1
Volume 39,
Issue 4
Volume 39,
Issue 1
Volume 38,
Issue 4
Volume 38,
Issue 1
Volume 37,
Issue 4
Volume 37,
Issue 3
Volume 37,
Issue 2
Volume 37,
Issue 1
Volume 36,
Issue 4
Volume 36,
Issue 1
Volume 35,
Issue 4
Volume 35,
Issue 2
Volume 35,
Issue 1
Volume 34,
Issue 4
Volume 34,
Issue 1
Volume 33,
Issue 4
Volume 33,
Issue 1
Volume 32,
Issue 4
Volume 32,
Issue 2
Volume 32,
Issue 1
Volume 31,
Issue 4
Volume 31,
Issue 1
Volume 30,
Issue 4
Volume 30,
Issue 1
Volume 29,
Issue 4
Volume 29,
Issue 3
Volume 29,
Issue 2
Volume 29,
Issue 1
Volume 28,
Issue 4
Volume 28,
Issue 3
Volume 28,
Issue 2
Volume 28,
Issue 1
Volume 27,
Issue 4
Volume 27,
Issue 3
Volume 27,
Issue 2
Volume 27,
Issue 1
Volume 26,
Issue 4
Volume 26,
Issue 3
Volume 26,
Issue 2
Volume 26,
Issue 1
Volume 25,
Issue 4
Volume 25,
Issue 3
Volume 25,
Issue 2
Volume 25,
Issue 1
Volume 24,
Issue 4
Volume 24,
Issue 3
Volume 24,
Issue 2
Volume 24,
Issue 1
Volume 4,
Issue 3
>
Table of contents
1
Advanced multilevel metallization technology
Ohba, T.
et al.
| 1996
12
Ti/Co bilayers in salicide technology: electrical evaluation
Lauwers, A.
/ Wang, Q. F.
/ Deweerdt, B.
et al.
| 1996
19
Improved thermal stability of cobalt silicide formed by ion beam assisted deposition on polysilicon
Ravesi, S.
/ La Via, F.
/ Raineri, V.
et al.
| 1996
24
Epitaxy of CoSi~2/Si(100): from Co/Ti/Si(100) to reactive deposition epitaxy
Vantomme, A.
/ Degroote, S.
/ Dekoster, J.
et al.
| 1996
30
Experimental identification of the optical phonon of CoSi~2 in the infrared
Bocelli, S.
/ Guizzetti, G.
/ Marabelli, F.
et al.
| 1996
34
The modelling routes for the chemical vapour deposition process: application to Si~1~-~xGe~x deposition
Pons, M.
/ Bernard, C.
/ Rouch, H.
et al.
| 1996
44
Comparison of CoSi~2 interconnection lines on crystalline and noncrystalline silicon fabricated by writing focused ion beam implantation
Teichert, J.
/ Bischoff, L.
/ Hesse, E.
et al.
| 1996
50
Beam induced phase transformations and self annealing in as-implanted iron silicides
Crecelius, G.
/ Radermacher, K.
/ Dieker, C.
et al.
| 1996
56
Electrical and optical properties of thin Fe~1~-~xCo~xSi~2 films
Teichert, S.
/ Kilper, R.
/ Franke, T.
et al.
| 1996
63
Ni silicides formation and properties in RF sputtered Ni thin films
Belu-Marian, A.
/ Serbanescu, M. D.
/ Manaila, R.
et al.
| 1996
68
Raman study of tetragonal tungsten disilicide
Chaix-Pluchery, O.
/ Genet, F.
/ Lucazeau, G.
et al.
| 1996
72
Cubic metastable FeSi~1~-~x epitaxially grown on Si and MgO substrates
Degroote, S.
/ Vantomme, A.
/ Dekoster, J.
et al.
| 1996
77
Formation of CoSi~2 on strained Si~0~.~8Ge~0~.~2 using a sacrificial Si layer
Donaton, R. A.
/ Kolodinski, S.
/ Caymax, M.
et al.
| 1996
82
Some physical properties of ReSi~1~.~7~5 single crystals
Gottlieb, U.
/ Affronte, M.
/ Nava, F.
et al.
| 1996
87
Electrical and optical properties of thin -Fe~xSi~2 films on Al~2O~3 substrates
Herz, K.
/ Powalla, M.
et al.
| 1996
93
Photoelectron spectroscopic investigations of thin Fe~xSi~1~0~0~-~x films
Kilper, R.
/ Teichert, S.
/ Franke, T.
et al.
| 1996
98
Angular dependence of the magnetoresistance of TiSi~2 single crystals
Affronte, M.
/ Laborde, O.
/ Gottlieb, U.
et al.
| 1996
103
Phonon dispersion relations of metallic NiSi~2 and CoSi~2 by semi-empirical tight-binding calculation
Sanguinetti, S.
/ Calegari, C.
/ Miglio, L.
et al.
| 1996
107
Metallurgical and electrical investigation of Pt~5Ni~9~5/silicon interactions
Corni, F.
/ Nobili, C.
/ Ottaviani, G.
et al.
| 1996
112
Advanced copper interconnections for silicon CMOS technologies
Torres, J.
et al.
| 1996
124
Electroless copper metallisation of titanium nitride
Patterson, J. C.
/ Ni Dheasuna, C.
/ Barrett, J.
et al.
| 1996
129
Process optimization of copper MOCVD using modeling experimental design
Mouche, M.-J.
/ Mermet, J.-L.
/ Pires, F.
et al.
| 1996
134
Structure and electrical properties of thin copper films deposited by MOCVD
Roeber, J.
/ Kaufmann, C.
/ Gessner, T.
et al.
| 1996
139
Patterning of copper for multilevel metallization: reactive ion etching and chemical-mechanical polishing
Steinbruechel, C.
et al.
| 1996
147
Effects of the biasing frequency on RIE of Cu in a Cl~2-based discharge
Bertz, A.
/ Werner, T.
/ Hille, N.
et al.
| 1996
152
Investigation of the oxidation behaviour of thin film and bulk copper
O'Reilly, M.
/ Jiang, X.
/ Beechinor, J. T.
et al.
| 1996
157
Nucleation and growth of CVD-W on TiN studied by X-ray fluorescence spectrometry
Marangon, M. S.
/ Queirolo, G.
/ Savoia, C.
et al.
| 1996
162
Influence of mixed reductants on the growth rate of WF~6-based W-CVD
Jongste, J. F.
/ Oosterlaken, T. G. M.
/ Leusink, G. J.
et al.
| 1996
169
Cluster beams for metallization of microstructured surfaces
Gatz, P.
/ Hagena, O. F.
et al.
| 1996
175
Thermodynamic and experimental study of Cu-LPCVD by reduction of copper chloride
Bourhila, N.
/ Thomas, N.
/ Palleau, J.
et al.
| 1996
182
Some particular features of the condensation process, structure and properties of thin metal films caused by self-ion bombardment
Gusev, I. V.
/ Mohnjuk, A. A.
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| 1996
187
Precursor development for the chemical vapor deposition of aluminium, copper and palladium
Graefe, A.
/ Heinen, R.
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| 1996
192
Chemical mechanical polishing of copper for multilevel metallization
Stavreva, Z.
/ Zeidler, D.
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| 1996
197
Stress voiding and electromigration phenomena in aluminum alloys
Kordic, S.
/ Augur, R. A.
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et al.
| 1996
208
Influence of the anti reflective coating on the electromigration resistance of 0.5 m technology metal-2 line structures
Stevens, R.
/ Witvrouw, A.
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| 1996
215
Stress in Al, AlSiCu, and AlVPd films on oxidized Si substrates
Leusink, G. J.
/ Lokker, J. P.
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| 1996
220
Interaction of a void and a grain boundary under a high electric current stress employing three-dimensional molecular dynamics simulation
Shingubara, S.
/ Utsunomiya, I.
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| 1996
227
Electromigration resistance of TiWN/Cu/TiWN interconnections
Fukada, T.
/ Mori, T.
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| 1996
234
Model calculations on a bipolar transistor emitter interconnection with different contact shapes
Weide, K.
/ Ullmann, J.
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| 1996
239
The effect of ion implantation on the properties of Al films
Zaborowski, M.
/ Barcz, A.
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| 1996
246
Hillock recognition by digital image processing
Zaborowski, M.
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et al.
| 1996
251
Ti-diffusion barrier in Cu-based metallization
Braud, F.
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| 1996
257
Sputtering of tantalum-based diffusion barriers in Si/Cu metallization: effects of gas pressure and composition
Stavrev, M.
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| 1996
263
Co-sputtered TiB~2 as a diffusion barrier for advanced microelectronics with Cu metallization
Sade, G.
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et al.
| 1996
269
Ternary amorphous metallic thin films as diffusion barriers for Cu metallization
Nicolet, M.-A.
et al.
| 1996
277
LPCVD Re~xSi~yN~z diffusion barriers in Si/SiO~2/Cu metallizations
Dutron, A.-M.
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| 1996
285
Electrical characterization of conductive and non-conductive barrier layers for Cu-metallization
Ahrens, C.
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| 1996
291
Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization
Kaufmann, C.
/ Baumann, J.
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| 1996
295
Ti nitride phases in thin films deposited by DC magnetron sputtering
Manalia, R.
/ Biro, D.
/ Barna, P. B.
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| 1996
303
Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion
Vogt, M.
/ Drescher, K.
et al.
| 1996
308
Integration of a TiN barrier layer formed by rapid thermal annealing in a 1 m CMOS process
Stegemann, K.-H.
/ Heinig, V.
/ Fontaine, G.
et al.
| 1996
314
Aspects of TiN and Ti deposition in an ECR plasma enhanced CVD process
Weber, A.
/ Nikulski, R.
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| 1996
321
3D simulation of tungsten low-pressure chemical vapor deposition in contact holes
Bar, E.
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| 1996
326
Evaluation of selective tungsten plugs on TiN, W and AlSi by analytical and electrical measurements
Schulz, S. E.
/ Hintze, B.
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| 1996
332
Growth rate modeling for selective tungsten LPCVD
Wolf, H.
/ Streiter, R.
/ Schulz, S. E.
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| 1996
339
Selective deposition of tungsten on ITM-CoSi~2
Kaehler, J. D.
/ Depta, D.
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| 1996
342
W/Si Schottky diodes: effect of sputtering deposition conditions on the barrier height
Mamor, M.
/ Dufour-Gergam, E.
/ Finkman, L.
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| 1996
347
Ohmic contacts to p-type 6H-silicon carbide
Nennewitz, O.
/ Spiess, L.
/ Breternitz, V.
et al.
| 1996
352
The ohmic contact to the silicon Schottky barrier using vanadium silicide and gold or silver metallization
Remenyuk, A. D.
/ Schmidt, N. M.
et al.
| 1996
355
Electrical characteristics of aluminum contacts to porous silicon
Zimin, S. P.
/ Kuznetsov, V. S.
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| 1996
359
Advanced metallization technology for 256M DRAM
Kuecher, P.
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| 1996
367
Inter-metal dielectric planarization process for 0.35 m multilevel interconnection devices
Bacchetta, M.
/ Zaccherini, C.
/ Zanotti, L.
et al.
| 1996
374
A highly reliable, low cost 0.5 m three level tungsten metallization
Hain, M.
/ Koerner, H.
/ Neureither, B.
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| 1996
378
On the formation of silicides on poly runners with topography by a two-step silicidation process
Jonckx, F.
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/ Deweerdt, B.
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| 1996
382
Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology
Ruhl, G.
/ Froeschle, B.
/ Ramm, P.
et al.
| 1996