Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Table of contents
- 1203
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Scaling behavior of delta‐doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source‐drain gaps down to 230 nmVan Hove, M. / Zou, G. / De Raedt, W. et al. | 1993
- 1209
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Two‐phase liquid phase epitaxy of In0.53Ga0.47As on InPChen, Mu‐Kuen / Lin, Hao‐Hsiung et al. | 1993
- 1214
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Effects of reactive ion etching on optical and electro‐optical properties of GaInAs/InP based strip‐loaded waveguidesThirstrup, C. / Pang, S. W. / Albrektsen, O. et al. | 1993
- 1222
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Identification of the volatile reaction products of the Cl2+GaAs etching reactionSu, Chaochin / Hou, Hui‐qui / Lee, Gang Ho et al. | 1993
- 1243
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Phenomenological modeling of ion‐enhanced surface kinetics in fluorine‐based plasma etchingGray, David C. / Tepermeister, I. / Sawin, Herbert H. et al. | 1993
- 1258
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Stepper focus characterization using diffraction from latent imagesMilner, Lisa M. / Bishop, Ken P. / Naqvi, S. Sohail H. et al. | 1993
- 1267
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Sensitivity of the focusing property of optimized electrostatic lensesBodrogi, P. / Szép, J. et al. | 1993
- 1270
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Model for predicting the effects of device geometry on the capacitance of field emitter array cathodesOhlinger, W. L. / Hill, D. N. / Feeney, R. K. et al. | 1993
- 1275
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Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular‐beam epitaxySpringThorpe, A. J. / Moore, W. T. / Majeed, A. et al. | 1993
- 1281
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Spatial and angular nonuniformities from collimated sputteringDew, S. K. / Liu, D. / Brett, M. J. et al. | 1993
- 1287
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Thin film properties of low‐pressure chemical vapor deposition TiN barrier for ultra‐large‐scale integration applicationsHegde, Rama I. / Fiordalice, Robert W. / Travis, Edward O. et al. | 1993
- 1297
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Low‐voltage field emitter array cathode for high frequency applicationsHill, D. N. / Ohlinger, W. L. / Cochran, J. K. et al. | 1993
- 1302
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Effect of lanthanum doping on the electrical properties of sol‐gel derived ferroelectric lead–zirconate–titanate for ultra‐large‐scale integration dynamic random access memory applicationsSudhama, C. / Kim, J. / Lee, J. et al. | 1993
- 1310
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Modeling of multilayer ion etching processesSherwin, S. J. / Barouch, E. / Karniadakis, G. E. et al. | 1993
- 1314
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Active neutral network control of wafer attributes in a plasma etch processRietman, Edward A. / Frye, Robert C. / Lory, Earl R. et al. | 1993
- 1317
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Electron trapping in thin oxide on n‐InPEftekhari, G. et al. | 1993
- 1331
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Dielectric/semiconductor interfacesWieder, H. H. et al. | 1993
- 1336
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Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfacesDuke, C. B. et al. | 1993
- 1347
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Reaching consensus and closure on key questions, a history of success, and failure of GaAs surfaces and interfaces at the Proceedings of the Physics and Chemistry of Semiconductor InterfacesSpicer, W. E. / Green, A. M. et al. | 1993
- 1354
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Semiconductor heterojunctions at the Conference on the Physics and Chemistry of Semiconductor Interfaces: A device physicist’s perspectiveKroemer, Herbert et al. | 1993
- 1362
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Heterojunction band discontinuities: A fundamental problem in solid‐state scienceMargaritondo, Giorgio et al. | 1993
- 1370
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Scanning tunneling microscope study of GaAs(001) surfaces grown by migration enhanced epitaxyKim, J. / Gallagher, M. C. / Willis, R. F. et al. | 1993
- 1374
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Scanning tunneling microscopy of flat and vicinal molecular‐beam epitaxy grown GaAs(001)‐(2×4) surfaces: The effect of growth ratePond, K. / Maboudian, R. / Bressler‐Hill, V. et al. | 1993
- 1379
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Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substratesLiliental‐Weber, Zuzanna / Chen, Y. / Werner, P. et al. | 1993
- 1384
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Molecular‐beam epitaxial growth mechanisms of (Al,Ga)As on vicinal GaAs surfaces: Self‐organization and step bunchingKrishnamurthy, M. / Lorke, A. / Wassermeier, M. et al. | 1993
- 1388
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Surface stoichiometry and interface formation during molecular‐beam epitaxy of strained InAs/AlxGa0.48−xIn0.52As heterostructuresTournié, Eric / Ploog, Klaus H. / Hohenstein, Matthias et al. | 1993
- 1392
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Concentration dependence of Ge segregation during the growth of a SiGe buried layerGodbey, D. J. / Ancona, M. G. et al. | 1993
- 1396
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Control of deposition rate in remote plasma enhanced chemical vapor deposition of GexSi1−x/Si heteroepitaxial filmsKinosky, D. / Qian, R. / Mahajan, A. et al. | 1993
- 1401
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Microstructure and light emission in stain‐etched Si1−xGex alloysPike, W. T. / Ksendzov, A. / Fathauer, R. W. et al. | 1993
- 1407
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Electron energy loss spectroscopy on FeSi2/Si(111) heterostructures grown by gas source molecular‐beam epitaxyRösen, B. / Schäfer, H. Ch. / Dieker, Ch. et al. | 1993
- 1413
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In situ core‐level photoelectron spectroscopy study of indium segregation at GaInAs/GaAs heterojunctions grown by molecular‐beam epitaxyLarive, M. / Nagle, J. / Landesman, J. P. et al. | 1993
- 1418
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X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerfaceWang, M. W. / Collins, D. A. / McGill, T. C. et al. | 1993
- 1423
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In situ ellipsometric study of As capping and low temperature molecular‐beam epitaxy GaAs growth and implications for the low temperature critical thicknessEyink, K. G. / Cong, Y. S. / Gilbert, R. et al. | 1993
- 1427
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GaAs surface control during metalorganic vapor phase epitaxy by reflectance anisotropy spectroscopyReinhardt, F. / Richter, W. / Müller, A. B. et al. | 1993
- 1431
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Geometry and mode of growth of alkali metal/Si(100)2×1 interfacesSoukiassian, P. / Spiess, L. / Schirm, K. M. et al. | 1993
- 1439
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Na adsorption on Si(111)‐(7×7) studied by scanning tunneling microscopy and photoemissionPaggel, J. J. / Haak, H. / Theis, W. et al. | 1993
- 1444
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Surface core‐level shifts in CaF2‐on‐Si(111) films: Experiment and theoryRotenberg, Eli / Denlinger, J. D. / Hessinger, Uwe et al. | 1993
- 1449
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Structure of Sb monolayers on Ge(111)2×1: A combined study using core‐level photoemission, x‐ray standing waves, and surface extended x‐ray absorption fine structureKendelewicz, T. / Woicik, J. C. / Miyano, K. E. et al. | 1993
- 1455
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Atomic and electronic structure of B/Si(100)Cao, R. / Yang, X. / Pianetta, P. et al. | 1993
- 1459
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Interface structure of the 1 monolayer (2×1)‐Si/GaAs(001) system by x‐ray photoelectron diffractionTran, T. T. / Chambers, S. A. et al. | 1993
- 1463
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Role of ionicity in the determination of surface atomic geometries: GaP, ZnS, and CuCl (110) surfacesKlepeis, J. E. / Mailhiot, C. / van Schilfgaarde, M. et al. | 1993
- 1467
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Atomic arrangement at the CuBr(100) surface and CuBr/GaAs(100) interface: Application of the electron counting methodDassanayake, U. M. / Chen, W. / Kahn, A. et al. | 1993
- 1472
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Tunneling microscopy of point defects on GaAs(110)Lengel, G. / Wilkins, R. / Brown, G. et al. | 1993
- 1477
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Scanning tunneling microscopy studies of Ge/GaAs(100) interface formationWang, X.‐S. / Self, K. / Leonard, D. et al. | 1993
- 1481
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Electronic properties of Sb monolayers on III–V(110) surfaces determined by resonance Raman scatteringEsser, N. / Köpp, M. / Haier, P. et al. | 1993
- 1486
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Polarization study of the p(1×1)‐ and p(1×2)‐phases of Bi/GaSb(110) using linearly polarized synchrotron radiationMcIlroy, D. N. / Heskett, D. / McLean, A. B. et al. | 1993
- 1492
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Overlayer‐induced valence states, and evidence for charge transfer in Na/GaP(110) and Na/GaAs(110): A comparative photoemission studyEvans, D. A. / Lapeyre, G. J. / Horn, K. et al. | 1993
- 1497
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Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogenSchaefer, J. A. / Stietz, F. / Woll, J. et al. | 1993
- 1502
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Cross‐sectional scanning tunneling microscopy of epitaxial GaAs structuresVaterlaus, A. / Feenstra, R. M. / Kirchner, P. D. et al. | 1993
- 1509
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Scanning tunneling microscopy of doping and compositional III–V homo‐ and heterostructuresGwo, S. / Chao, K.‐J. / Smith, A. R. et al. | 1993
- 1514
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Interface roughness in Ge/Si superlatticesHeadrick, R. L. / Baribeau, J.‐M. et al. | 1993
- 1518
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Novel Si‐based superlattices consisting of alternating layers of crystalline Si and porous amorphous Si1−xGex alloysFathauer, R. W. / George, T. / Jones, E. W. et al. | 1993
- 1521
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Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second‐harmonic generation at these interfacesBjorkman, C. H. / Yasuda, T. / Shearon, C. E. et al. | 1993
- 1528
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High resolution x‐ray photoemission spectroscopy studies of thin SiO2 and Si/SiO2 interfacesHattori, Takeo et al. | 1993
- 1533
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Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor depositionMa, Y. / Yasuda, T. / Lucovsky, G. et al. | 1993
- 1541
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Epitaxial rare earth fluoride insulating layers on semiconductors: Structure, phase transitions, and interface reactionsJenkins, L. C. / Griffiths, C. L. / Hughes, A. et al. | 1993
- 1546
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Schottky barrier height—do we really understand what we measure?Tung, R. T. et al. | 1993
- 1553
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Interfacial atomic composition and Schottky barrier heights at the Al/GaAs(001) interfaceDandrea, R. G. / Duke, C. B. et al. | 1993
- 1559
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Effect of surface reconstruction on Fermi‐level pinning in the Sn on Si(111) systemGriffiths, C. L. / Anyele, H. T. / Matthai, C. C. et al. | 1993
- 1564
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Giant variation in Schottky barrier height observed in the Co/Si systemSullivan, J. P. / Tung, R. T. / Eaglesham, D. J. et al. | 1993
- 1571
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Pb/GaAs(100): Band bending, adatom‐induced gap states and surface dipoleChen, W. / Kahn, A. / Mangat, P. S. et al. | 1993
- 1575
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Fermi‐level variation on GaAs(110) surface with Sb overlayer studied with a photoelectron microscopeKim, Changyoung / Cao, Renyu / Pianetta, Piero et al. | 1993
- 1579
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Diffusive and inelastic scattering in ballistic‐electron‐emission spectroscopy and ballistic‐electron‐emission microscopyLee, E. Y. / Turner, B. R. / Schowalter, L. J. et al. | 1993
- 1584
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Ballistic‐electron emission microscopy at metal/GaP(110) interfaces: Electron transport and Schottky‐barrier heightsBauer, A. / Cuberes, M. T. / Prietsch, M. et al. | 1993
- 1591
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Cesium on GaP(110) surfaces: A confirmation of the metal‐induced gap states‐plus‐defects modelLinz, R. / Clemens, H. J. / Mönch, W. et al. | 1993
- 1598
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Relaxation of GaAs surface band bending by atomic layer passivationWada, Yoshinori / Wada, Kazumi et al. | 1993
- 1603
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Sb‐induced surface stabilization of InP(100) wafer beyond 500 °CSoukiassian, P. / Mangat, P. S. / Huttel, Y. et al. | 1993
- 1609
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Grazing‐incidence x‐ray photoemission spectroscopy investigation of oxidized GaAs(100): A novel approach to nondestructive depth profilingChester, M. J. / Jach, Terrence / Thurgate, S. et al. | 1993
- 1614
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Free‐electron laser internal photoemission measurements of heterojunction band discontinuitiesMcKinley, J. T. / Albridge, R. G. / Barnes, A. V. et al. | 1993
- 1617
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Measurement of AlP/GaP (001) heterojunction band offsets by x‐ray photoemission spectroscopyWaldrop, J. R. / Grant, R. W. / Kraut, E. A. et al. | 1993
- 1621
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Valence band structure and Mn 3d derived density of states in epitaxially grown zinc‐blende MnSeBressler, P. R. / Klöpper, Th. / Gumlich, H.‐E. et al. | 1993
- 1628
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Modification of heterojunction band offsets at III–V/IV/III–V interfacesFranciosi, A. / Sorba, L. / Bratina, G. et al. | 1993
- 1638
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Heterojunction band offset: A local featurePriester, C. / Allan, G. / Lannoo, M. et al. | 1993
- 1642
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Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interfaceBöhrer, J. / Krost, A. / Bimberg, D. et al. | 1993
- 1647
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Exciton transport and localization in type‐II GaAs/AlAs superlatticesGilliland, G. D. / Wolford, D. J. / Bradley, J. A. et al. | 1993
- 1652
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Optical properties of strained‐layer InxGa1−xSb/GaSb heterostructures with x≤0.4Qian, L. Q. / Wessels, B. W. et al. | 1993
- 1656
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Determination of the valence band offset at the asymmetric GaAs/In0.53Ga0.47As interface by ultraviolet photoemission spectroscopyWilliams, M. D. / Chang, T. Y. et al. | 1993
- 1660
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Lower‐dimensional quantum structures by selective growth and gas‐phase nucleationVahala, Kerry J. / Saunders, Winston A. / Tsai, Charles S. et al. | 1993
- 1667
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Barrier modulated semiconductor quantum wiresKnipp, P. A. / Reinecke, T. L. et al. | 1993
- 1670
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Heterodimensional Schottky metal–two‐dimensional electron gas interfacesGelmont, B. L. / Peatman, W. / Shur, M. et al. | 1993
- 1675
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Tunable generation of microscopic and mesoscopic step arrays on non‐(100)‐oriented GaAs: A new route to quantum wire structures by epitaxial growthPloog, Klaus H. / Nötzel, Richard / Ilg, Matthias et al. | 1993
- 1681
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Orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wellsZhang, Y. / Katz, J. / Wang, W. I. et al. | 1993
- 1685
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Room temperature observation of photocurrent dependence on applied bias in Si1−xGex/Si multiquantum wellsChowdhury, Andalib A. / Rashed, M. Mahbub / Maziar, C. M. et al. | 1993
- 1689
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Effect of ordering, interface imperfections and clusters, and external electric fields on optical spectra of Si–SiGe heterostructuresJaros, M. / Beavis, A. W. / Corbin, E. et al. | 1993
- 1693
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Effect of interfacial bond type on the electronic and structural properties of GaSb/InAs superlatticesHemstreet, L. A. / Fong, C. Y. / Nelson, J. S. et al. | 1993
- 1697
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Scanning tunneling microscopy of GaInAs/InP multiquantum well (110) surfaces observed under an ultrahigh vacuumOsaka, Fukunobu / Kato, Takashi et al. | 1993
- 1702
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Study of temperature dependent hydrogenation on near‐surface strained quantum wellsChang, Ying‐Lan / Krishnamurthy, Mohan / Tan, I‐Hsing et al. | 1993
- 1706
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Surface‐layer modulation of electron concentrations in InAs–AlSb quantum wellsNguyen, Chanh / Brar, Berinder / Kroemer, Herbert et al. | 1993
- 1710
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Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructuresPollak, Fred H. et al. | 1993
- 1717
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Absorption modulation induced by electron beam excitation of strained In0.2Ga0.8As/GaAs multiple quantum wellsRich, D. H. / Rammohan, K. / Tang, Y. et al. | 1993
- 1723
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Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surfaceSobiesierski, Z. / Westwood, D. I. / Woolf, D. A. et al. | 1993
- 1727
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Evaluation of ohmic contacts to GaAs(100) and (111)B using InAs/GaAs short period superlattice and InGaAs intermediate layersHooper, S. E. / Wilks, S. P. / Elliot, M. et al. | 1993
- 1731
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Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructuresMonroe, Don / Xie, Y. H. / Fitzgerald, E. A. et al. | 1993
- 1738
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Three‐dimensional simulations of quantum transport in semiconductor nanostructuresTing, D. Z.‐Y. / Kirby, S. K. / McGill, T. C. et al. | 1993
- 1743
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Effect of interface roughness and scattering on the performance of AlAs/InGaAs resonant tunneling diodesFörster, A. / Lange, J. / Gerthsen, D. et al. | 1993
- 1748
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Ohmic contact to p‐Zn(S,Se) using a pseudograded Zn(Te,Se) structureFan, Y. / Han, J. / He, L. et al. | 1993