Applied surface science
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
- 1
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Liquid metal microdroplet for deposition purposesVladimirov, V. V. / Badan, V. E. / Gorshkov, V. N. et al. | 1993
- 13
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Optical properties of layers and crystals of spherical particlesModinos, A. / Karathanos, V. / Stefanou, N. et al. | 1993
- 18
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A theoretical study of optical properties of thin filmsKhan, M. A. et al. | 1993
- 23
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Scanning tunneling potentiometry (STP) studies of gold islands on a thin carbon filmBesold, J. / Reiss, G. / Hoffmann, H. et al. | 1993
- 28
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Modification of Cu-W superlattices by ion irradiationGladyszewski, G. / Goudeau, P. / Naudon, A. et al. | 1993
- 35
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An alternative explanation for epitaxial growth: the case of fcc(111) on bcc(110)Grey, F. / Bohr, J. et al. | 1993
- 41
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The crystallization kinetics, growth mechanism, and stability of co-evaporated NiSi~2~~0~.~2 thin alloy filmsGrimberg, I. / Weiss, B. Z. et al. | 1993
- 49
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Epitaxial growth of platinum on Co(10.0)Barbier, A. / Carriere, B. / Da Costa, V. et al. | 1993
- 54
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Crystallographic and electronic structure of Cr films on Au(100)Rouyer, D. / Krembel, C. / Hanf, M. C. et al. | 1993
- 59
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Electron spectroscopy study of dysprosium thin films deposited on copper substratesDemri, B. / Burggraf, C. / Mesboua, N. et al. | 1993
- 63
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Growth of Pt/Cu(111) characterised by Auger electron spectroscopy, core level photoemission and X-ray photoelectron diffractionBelkhou, R. / Barrett, N. T. / Guillot, C. et al. | 1993
- 71
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Scanning tunneling microscopy on graphite and goldGuichar, G. M. / Han, B. / Morand, M. et al. | 1993
- 76
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Conduction-band dispersion in heteroepitaxial C~6~0Themlin, J.-M. / Bouzidi, S. / Coletti, F. et al. | 1993
- 83
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Characterization of graphite superficial thin films achieved during frictionLanglade, C. / Fayeulle, S. / Olier, R. et al. | 1993
- 90
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Hydrogen adsorption states on surfaces of thin transition-metal films in the process of hydride formationNowicka, E. / Wolfram, Z. / Dus, R. et al. | 1993
- 94
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Electron spectroscopy studies on carbon segregation from a mono-crystalline -Fe(111) specimenArabczyk, W. / Storbeck, F. / Muessig, H. J. et al. | 1993
- 99
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Residual stress determination by X-ray diffraction in tungsten thin filmsBadawi, K. F. / Naudon, A. / Goudeau, P. et al. | 1993
- 106
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Decomposition of thin palladium hydride films as a source for low temperature atomic hydrogen emissionDus, R. / Nowicka, E. / Wolfram, Z. et al. | 1993
- 110
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Co-based multilayer films as novel magneto-optical recording mediaShin, S.-C. et al. | 1993
- 118
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Magnetic properties of a Pd/Co/Pd ultrathin film studied by polarized neutron specular reflectionPasyuk, V. V. / Lauter, H. J. / Johnson, M. T. et al. | 1993
- 124
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Studies of giant magnetoresistive Co-Cu multilayersHighmore, R. J. / Somekh, R. E. / Shih, W. C. et al. | 1993
- 131
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Structural and magnetic studies in Ni/Ti multilayersPorte, M. / Lassri, H. / Krishnan, R. et al. | 1993
- 134
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Spin waves in thin films consisting of two different ferromagnetic materialsSwirkowicz, R. / Sukiennicki, A. et al. | 1993
- 140
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Magnetic anisotropy of a transition metal monolayer and bilayerPick, S. / Dreysse, H. et al. | 1993
- 145
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The magnetic behaviour of Fe~3Al thin films obtained by cathodic sputteringTutovan, V. / Luca, D. et al. | 1993
- 149
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Surface phase diagrams of the semi-infinite Ising model with a surface amorphizationIlkovic, V. et al. | 1993
- 157
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AES and SIMS study of magneto-optical information storage layer structureBiczo, I. / Josepovits, V. K. / Pavlyak, F. et al. | 1993
- 165
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On a possible antiferromagnetic-to-ferromagnetic transition in terms of the slab thicknessNait-Laziz, H. / Demangeat, C. et al. | 1993
- 170
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X-ray dichroism of Dy overlayers on a magnetic substrateVogel, J. / Sacchi, M. / Sirotti, F. et al. | 1993
- 175
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Modifications of structure and magnetism of Ce/Fe multilayers induced by irradiation with low-energy Ar ionsThiele, J. / Klose, F. / Schulte, O. et al. | 1993
- 179
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Study of the relation between composition and physical properties of YBaCuO thin films using RBS, NRA, XRD, XAS and p(T)Cheang Wong, J. C. / Ortega, C. / Rochet, F. et al. | 1993
- 187
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YBa~2Cu~3O~7~-~x thin films integrated on silicon-on-sapphire substrates with high critical current densitiesMatthee, T. / Wecker, J. / Behner, H. et al. | 1993
- 192
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Structural study of MBE-grown DyBa~2Cu~3O~7/Dy~2O~3 films on SrTiO~3Catana, A. / Locquet, J.-P. et al. | 1993
- 198
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Surface reactivity and protection of the YBa~2Cu~3O~7~-~x HTSC compoundRupeng, Z. / Davis, C. A. / Goringe, M. J. et al. | 1993
- 205
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Studies on as-grown, Cl-covered surfaces of YBa~2Cu~3O~7~-~ filmsLange, R. / Clemens, H. J. / Moench, W. et al. | 1993
- 212
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Thin film electroceramicsAtkinson, A. / Moseley, P. T. et al. | 1993
- 220
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Structure and property of heteroepitaxial TiO~2/VO~2 multilayersChang, H. L. M. / Gao, Y. / Zhang, T. J. et al. | 1993
- 227
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The influence of thermal annealing on the structural, electrical and optical properties of TiO~2~-~x thin filmsRadecka, M. / Zakrzewska, K. / Czternastek, H. et al. | 1993
- 235
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The effect of substrate temperature on the properties of sputtered titanium oxide filmsMeng, L. / Andritschky, M. / Dos Santos, M. P. et al. | 1993
- 240
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Electrical properties of Cr- and Nb-doped TiO~2 thin filmsBernasik, A. / Radecka, M. / Rekas, M. et al. | 1993
- 246
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Role of oxygen vacancies in anodic TiO~2 thin filmsTit, N. / Halley, J. W. / Michalewicz, M. T. et al. | 1993
- 252
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New approach for preparing blue potassium molybdenum bronze thin filmsYuan, Y. F. / Heavens, O. S. et al. | 1993
- 257
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Surface characterization of tetragonal ZrO~2Morterra, C. / Cerrato, G. / Ferroni, L. et al. | 1993
- 265
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Supply of hydrogen radicals generated by microwave plasma to the SiN film growing surface during RF plasma enhanced chemical vapor depositionYasui, K. / Shimizu, K. / Takahashi, H. et al. | 1993
- 271
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Thermodynamic characterization of a gamma-Al~2O~3 surface by an exclusively surface O/Cl exchange reactionReti, F. / Josepovits, V. K. / Perczel, I. V. et al. | 1993
- 277
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Unknown Ga~2O~3 structural phase and related characteristics as active layers for O~2 sensorsMacri, P. P. / Enzo, S. / Sberveglieri, G. et al. | 1993
- 283
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Hydrothermal ABO~3 ceramic thin filmsPilleux, M. E. / Grahmann, C. R. / Fuenzalida, V. M. et al. | 1993
- 289
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Grazing-incidence X-ray characterization of amorphous SiO~xN~yH~z thin filmsBrunel, M. / Ortega, L. / Cros, Y. et al. | 1993
- 293
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Electrical resistivity of RuO~x thin films prepared by ion beam sputter depositionKezuka, H. / Egerton, R. / Masui, M. et al. | 1993
- 298
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A study of the cation-zeolitic surface interaction by ESR spectroscopyIacomi, F. / Trif, E. / Popovici, E. et al. | 1993
- 302
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Optical properties of (AgI)~x-(Ag~2O-2B~2O~3)~1~-~x glassesArena, A. / Galli, G. / Giorgi, R. et al. | 1993
- 308
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The surface structure formed by H~2 desorption from proton-exchanged H~yLi~1~-~(~x~+~y~)Mn~2O~4 and its catalytic activity for oxidation of methane and butaneSato, K. / Inoue, Y. / Yasukawa, S. et al. | 1993
- 313
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Optical absorption and structural characterization of reactively sputtered tellurium suboxide thin filmsDi Giulio, M. / Nicotra, M. C. / Re, M. et al. | 1993
- 319
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Thin films of nickel manganese oxide for NTC thermistor applicationsFau, P. / Bonino, J. P. / Demai, J. J. et al. | 1993
- 325
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The growth and electrochemical properties of metal-oxide thin films: lithium intercalationJulien, C. / El-Farh, L. / Balkanski, M. et al. | 1993
- 331
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Effects of preliminary deposition of Ti on mechanical properties of TiN films on ironCarbucicchio, M. / Palombarini, G. et al. | 1993
- 337
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Zirconia/metal interfaces studied by X-ray photoelectron spectroscopyMariot, J.-M. / Harel, S. / Hague, C. F. et al. | 1993
- 342
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Concepts in molecular electronicsSigmund, E. / Gribi, P. / Isenmann, G. et al. | 1993
- 349
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Submicron periodic structures produced on polymer surfaces with polarized excimer laser ultraviolet radiationBolle, M. / Lazare, S. et al. | 1993
- 355
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Thin films of semiconducting polymeric porphyrinsKubaszewski, E. / Bennett, J. / Tomboulian, P. et al. | 1993
- 362
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Identification by Raman microprobe (LRM) of phenyl groups in thin surface coatingsDavis, C. A. / Rupeng, Z. / Crossley, J. A. A. et al. | 1993
- 366
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Imaging of polydiacetylenes by atomic force microscopyYamada, H. / Okada, S. / Fujii, T. et al. | 1993
- 371
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Electrical conductivity and Seebeck coefficient of some new organic semiconductorsSunel, V. / Rusu, M. / Caplanus, I. et al. | 1993
- 376
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Influence of naphthacene doping on the electrical and light-emitting behavior of 8-hydroxyquinoline aluminum based electroluminescent devicesWada, T. / Yogo, Y. / Kikuma, I. et al. | 1993
- 381
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On the current-voltage characteristics of some thin-film sandwich structures of the metal/organic semiconductor/metal typeRusu, G. I. et al. | 1993
- 388
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Characterization of sulfide/polyaniline and sulfide/polypyrrole contactsTsamouras, D. / Dalas, E. / Sakkopoulos, S. et al. | 1993
- 394
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Porous silicon: material properties, visible photo- and electroluminescenceBomchil, G. / Halimaoui, A. / Sagnes, I. et al. | 1993
- 408
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Porous n-silicon produced by photoelectrochemical etchingLevy-Clement, C. / Lagoubi, A. / Ballutaud, D. et al. | 1993
- 415
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A study on the current-voltage characteristics of porous siliconYeh, C. C. / Hsu, K. Y. J. / Chen, P. C. et al. | 1993
- 423
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Electronic structure and optical properties of silicon crystallitesProot, J. P. / Delerue, C. / Allan, G. et al. | 1993
- 426
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Unusual strain caused by the twin boundary structure in CdTe(111) filmsTatsuoka, H. / Kuwabara, H. / Nakanishi, Y. et al. | 1993
- 433
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The crystallinity of ZnS thin films prepared by MOCVDLi, J. W. / Su, Y. K. / Yokoyama, M. et al. | 1993
- 437
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EPR investigations on ZnS: Mn thin films prepared by hot wall techniqueNakamura, T. / Muramatsu, H. / Nakanishi, Y. et al. | 1993
- 442
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Determination of refractive indices of In~0~.~5~3Al~0~.~4~0Ga~0~.~0~7As and In~0~.~5~3Al~0~.~1~1Ga~0~.~3~6As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometryDinges, H. W. / Burkhard, H. / Loesch, R. et al. | 1993
- 447
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Interface defects and inhomogeneities induced by alloy clustering in InAlAs buffer layers grown on InPPeiro, F. / Cornet, A. / Morante, J. R. et al. | 1993
- 455
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Red-yellow CdSSe-ZnS SLs and blue-green SrS and CdSSe-SrS SLs double insulating EL devices prepared by hot wall epitaxyFujiyasu, H. / Takeuchi, Y. / Hikida, K. et al. | 1993
- 461
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Crystallinity of ZnS: Tb,F thin films on green thin film electroluminescent devices prepared by RF-magnetron sputteringLin, Y. J. / Su, Y. K. / Yokoyama, M. et al. | 1993
- 465
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MoS~2 thin films prepared by sulphurizationJaeger-Waldau, A. / Lux-Steiner, M. C. / Bucher, E. et al. | 1993
- 473
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Preparation of c-SiC and its application for light emitting diodesMimura, H. / Futagi, T. / Matsumoto, T. et al. | 1993
- 479
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Epitaxy of layered semiconductor thin filmsBrahim Otsmane, L. / Emery, J. Y. / Jouanne, M. et al. | 1993
- 482
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Co-evaporated thin films of semiconducting -FeSi~2Powalla, M. / Herz, K. et al. | 1993
- 489
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Crystallization process of amorphous mixed Si~xGe~1~-~x thin filmsBendayan, M. / Beserman, R. / Edelman, F. et al. | 1993
- 494
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High precision structural study of Si/Si~1~-~xGe~x superlatticesBaribeau, J.-M. / Lockwood, D. J. / Zhang, P. X. et al. | 1993
- 501
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Defect induced intermixing in thin Si/Ge superlatticesDettmer, K. / Kessler, F. R. / Freiman, W. et al. | 1993
- 507
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Interface transient layer of amorphous silicon based multilayers measured by in situ ellipsometryHatanaka, Y. / Ohkuwa, M. / Yamaguchi, T. et al. | 1993
- 511
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Influence of thickness inhomogeneity on the determination of optical constants of amorphous silicon thin filmsPisarkiewicz, T. / Czapla, A. / Czternastek, H. et al. | 1993
- 515
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Preparation and luminescent properties of SrSe:Ce thin filmsNakanishi, Y. / Ito, T. / Hatanaka, Y. et al. | 1993
- 520
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Improved luminescence from MOVPE-grown GaAs/AlGaAs single quantum wells using a multiple quantum well bufferLeitch, A. W. R. / Botha, J. R. et al. | 1993
- 525
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Rapid thermal and large area processing of Si and FeSi~2 films with a line electron beamPauli, M. / Doescher, M. / Daehn, G. et al. | 1993
- 532
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Thin film switching devices using amorphous silicon/silicon carbon multilayersHatanaka, Y. / Suzuki, M. / Watanabe, K. et al. | 1993
- 536
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Silicon etching techniques and application to mechanical devicesBourouina, T. / Spirkovitch, S. / Marty, F. et al. | 1993
- 543
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Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universalityDuke, C. B. et al. | 1993
- 553
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Progression of cleavage in Si, Ge, and GaAsLi, D. G. / McAlpine, N. S. / Haneman, D. et al. | 1993
- 560
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Surface processes in migration-enhanced epitaxy of III-V compound semiconductorsHorikoshi, Y. et al. | 1993
- 569
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Clean and Ni-adsorbed Si(110) surfacesShimaoka, G. et al. | 1993
- 575
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The roughening and pinning transition on vicinal surfaces of Si(100)Salanon, B. / Barbier, L. / Lapujoulade, J. et al. | 1993
- 580
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Vibrational properties of H/Si(111)-(1 x 1) surfaces: infrared absorption and electron energy loss spectroscopic studiesDumas, P. / Chabal, Y. J. / Jakob, P. et al. | 1993
- 587
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Analysis of boron in CVD diamond surfaces using neutron depth profilingLamaze, G. P. / Downing, R. G. / Pilione, L. et al. | 1993
- 593
-
Adsorption and decomposition of triethylindium on the Si(100) surface studied by X-ray and ultra-violet photoelectron spectroscopyFukuda, Y. / Suzuki, Y. / Murata, J. et al. | 1993
- 598
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Early stages of H~2O adsorption on clean Si(100)Lacharme, J. P. / Sebenne, C. / Cherif, S. M. et al. | 1993
- 603
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Submonolayer coverage of Ga and B adatoms on a Ge(111) surfaceCheng, C. / Kunc, K. et al. | 1993
- 607
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Optical spectroscopy of ordered GaAs(001) surfaces obtainedby sulfide passivationBerkovits, V. L. / Paget, D. et al. | 1993
- 614
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Hydrocarbon-based etching of InPAllinger, T. / Schaefer, J. A. et al. | 1993
- 619
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Halogen-induced surface states acceptors on GaAs(110) surfacesTroost, D. / Koenders, L. / Moench, W. et al. | 1993
- 625
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Atomic nitrogen on InAs(110) surfaces at room temperatureVan Gemmeren, T. / Rossi Salmagne, S. / Moench, W. et al. | 1993
- 632
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Physisorption and chemisorption of O~2 on GaAs(110) surfaces: a Kelvin-probe studyNienhaus, H. / Moench, W. et al. | 1993
- 638
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Temperature programmed desorption study of (NH~4)~2S~x treated GaAs surfacesNomura, T. / Yamagata, T. / Warashina, H. et al. | 1993
- 643
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Modification of GaAs surface stoichiometry and reactivity induced by a hydrogen plasmaDebiemme-Chouvy, C. / Ballutaud, D. / Pesant, J. C. et al. | 1993
- 647
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A study of the initial stages of the oxidation of silicon using ^1^8O~2 and RTPGanem, J.-J. / Battistig, G. / Rigo, S. et al. | 1993
- 654
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Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative studyGlachant, A. / Soukiassian, P. et al. | 1993
- 661
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Study of the heterointerfaces InSe on GaSe and GaSe on InSeFargues, D. / Brahim-Otsmane, L. / Eddrief, M. et al. | 1993
- 667
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Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopiesBrillson, L. J. / Vitomirov, I. M. / Raisanen, A. et al. | 1993
- 676
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Theory of the formation of Schottky barriersLannoo, M. / Allan, G. et al. | 1993
- 683
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Reaction of iron on siliconCrecelius, G. et al. | 1993
- 690
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Theoretical and experimental study of the Na/Si(100)2 x 1 surface structureSpiess, L. / Tang, S.-P. / Freeman, A. J. et al. | 1993
- 697
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Allotaxial growth of single-crystal Si/CoSi~2/Si(100) heterostructuresBay, H. L. / Mantl, S. / Michel, I. et al. | 1993
- 704
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The influence of growth techniques on the structure of epitaxial ErSi~1~.~7 on Si(111)Lollman, D. B. B. / Nguyen Tan, T. A. / Veuillen, J.-Y. et al. | 1993
- 712
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A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)Veuillen, J.-Y. / Lollman, D. B. B. / Nguyen Tan, T. A. et al. | 1993
- 718
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Epitaxial Er silicide formation on Si(111) in the monolayer rangeWetzel, P. / Pirri, C. / Bolmont, D. et al. | 1993
- 725
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Electrical and photoelectrical properties of ErSi~1~.~7/Si junctionsMuret, P. / Von Blanckenhagen, G. / Lefki, K. et al. | 1993
- 729
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Valency changeover at the Sm/Si(111)7 x 7 interface through chemisorption and epitaxySakho, O. / De Santis, M. / Sacchi, M. et al. | 1993
- 735
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The growth of Ag on Si(100)-2 x 1Borensztein, Y. / Alameh, R. et al. | 1993
- 742
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Investigation of the Si(100)2 x 1/Cu interface by UPS and surface reflectance spectroscopyGuillet, S. / Regalado, L. E. / Lopez-Rios, T. et al. | 1993
- 746
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Microstructural and compositional characterization of TiW/Al(0.8%Si)/TiW/PtSi/(100)SiAshkenazi, A. / Komem, Y. / Lerner, I. et al. | 1993
- 752
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Electronic transport properties of amorphous W/Si multilayersMajkova, E. / Lobotka, P. / Vavra, I. et al. | 1993
- 758
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Electrical characteristics of metal/a-Si~xC~1~-~x:H contactsOkada, K. / Ishikawa, K. / Akimoto, M. et al. | 1993
- 762
-
X-ray diffraction and I-V curve studies on the Al/Ti/Al/n-GaAs Schottky contact after annealing at various temperaturesChen, J.-R. / Chang, N.-L. et al. | 1993
- 766
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Schottky barrier formation for In deposited on GaAs(110): the low coverage limitOrtega, J. / Rincon, R. / Garcia-Vidal, F. J. et al. | 1993
- 772
-
Internal photoemission in metal/-FeSi~2/Si heterojunctionsLefki, K. / Muret, P. et al. | 1993
- 777
-
Optical studies of InP/InAlAs/InP interface recombinationsAbraham, P. / Monteil, Y. / Sacilotti, M. et al. | 1993
- 784
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OBIC measurements on planar high-voltage p^+-n junctions with diamond-like carbon films as passivation layerFrischholz, M. / Mandel, T. / Helbig, R. et al. | 1993
- 789
-
Search for photoinduced dipoles at heterojunction interfacesDell'Orto, T. / De Stasio, G. / Capozi, M. et al. | 1993
- 795
-
Electrical and optical properties of heterostructures made from diamond-like carbon layers on crystalline siliconMandel, T. / Frischholz, M. / Helbig, R. et al. | 1993
- 800
-
Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7Sirotti, F. / DeSantis, M. / Jin, X. et al. | 1993
- 806
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TM waves of a nonlinearly bounded semiconductor surface and filmBoardman, A. D. / Egan, P. / Wallis, R. F. et al. | 1993
- 814
-
Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructuresTabata, A. / Benyattou, T. / Pogany, D. et al. | 1993
- 821
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Epitaxial growth of rare earths and rare-earth compounds on II-VI semiconductorsDaudin, B. / Gros, P. / Ligeon, E. et al. | 1993
- 825
-
Chemical composition by Auger sputter-depth profiles of GaAs oxide layers formed after chemical or Ar^+ ion etchingsBresse, J. F. et al. | 1993
- 831
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Metalorganic chemical vapor deposition of ZnSe thin films on ITO/glass substratesHsu, C. T. / Su, Y. K. / Wu, T. S. et al. | 1993
- 835
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Tunnel current in n-poly-Si/SiO~2/n-Si structures with the 40-75 thermally grown silicon oxide films under very strong fieldsBalev, O. G. / Bantser, S. G. / Klimovskaja, A. I. et al. | 1993
- 840
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O Is investigation of SiO~2/Si interface formation using an alkali metal promoterRiehl-Chudoba, M. / Nishigaki, S. / Huttel, Y. et al. | 1993
- 847
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Electronic promotion of silicon oxynitridation at room temperature by alkali-metal catalystsGlachant, A. / Soukiassian, P. / Kim, S. T. et al. | 1993
- 854
-
Structural and electrical properties of Al~2O~3 thin films on p-Si grown by low-pressure metalorganic chemical vapor depositionKim, T. W. / Yom, S. S. / Kang, W. N. et al. | 1993
- 858
-
Constant capacitance technique to study electrical instabilities in InP MIS provided by PECVD silicon nitrideKim, C. H. / Kwon, S. D. / Choe, B. D. et al. | 1993