PHYSICA E
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Table of contents
- 2485
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Two-color two-photon Rabi oscillation of biexciton in single InAs/GaAs quantum dotBoyle, S.J. / Ramsay, A.J. / Fox, A.M. et al. | 2009
- 2489
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Observation of unique photon statistics of single artificial atom laserNomura, Masahiro / Kumagai, Naoto / Iwamoto, Satoshi et al. | 2009
- 2493
-
Coherent spin precession of electrons and excitons in charge tunable InP quantum dotsMasumoto, Yasuaki / Kawana, Keisuke / Tomimoto, Shinichi et al. | 2009
- 2497
-
Evidence for photon anti-bunching in acoustically pumped dotsCouto, O.D.D. Jr. / Lazić, S. / Iikawa, F. et al. | 2009
- 2501
-
Polarization conversion of excitonic photoluminescence under zero and nonzero magnetic fields in single InAlAs quantum dotsKaji, R. / Shindo, T. / Adachi, S. et al. | 2010
- 2505
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Large optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriersMorita, Ken / Takahashi, Tomoya / Kanbara, Toshiyuki et al. | 2009
- 2509
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Temperature dependent single photon emission in InP/GaInP quantum dotsNowak, A.K. / Gallardo, E. / Sarkar, D. et al. | 2010
- 2514
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Optical properties of modulation-doped InGaAs vertically coupled quantum dotsChuang, K.Y. / Tzeng, T.E. / Feng, David J.Y. et al. | 2010
- 2518
-
Photoconductivity of Si/Ge/Si structures with 1.5 and 2ML of Ge layerShegai, O.A. / Mashanov, V.I. / Nikiforov, A.I. et al. | 2010
- 2521
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Resonant photocurrent-spectroscopy of individual CdSe quantum dotsPanfilova, M. / Michaelis de Vasconcellos, S. / Pawlis, A. et al. | 2010
- 2524
-
Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs1−xSbx Type-II Quantum DotsHsu, Wei-Ting / Liao, Yu-An / Lu, Shu-Kai et al. | 2009
- 2529
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Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)AFukushima, T. / Hijikata, Y. / Yaguchi, H. et al. | 2009
- 2532
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Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittingsSaito, T. / Nakaoka, T. / Arakawa, Y. et al. | 2009
- 2536
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First-order photon interference of a single photon from a single quantum dotEkuni, S. / Nakajima, H. / Sasakura, H. et al. | 2009
- 2540
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Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxyKitada, Takahiro / Mukaijo, Akari / Takahashi, Tomoya et al. | 2009
- 2544
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Modulation spectroscopy on metamorphic InAs quantum dotsLin, E.Y. / Chen, C.Y. / Tzeng, T.E. et al. | 2010
- 2548
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One dimensional confinement of microcavity polaritons using non-piezoelectric surface acoustic wavesCerda-Méndez, E.A. / Krizhanovskii, D. / Biermann, K. et al. | 2010
- 2552
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Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonatorPiegdon, Karoline A. / Offer, Matthias / Lorke, Axel et al. | 2009
- 2556
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Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slabNakayama, Shigeru / Iwamoto, Satoshi / Ishida, Satomi et al. | 2010
- 2560
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Design, fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substratesTanabe, Katsuaki / Nomura, Masahiro / Guimard, Denis et al. | 2010
- 2563
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Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgapShirane, M. / Igarashi, Y. / Ota, Y. et al. | 2010
- 2567
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Characteristics of exciton polaritons in a ZnO microcavityKawase, Toshiki / Komura, Shingo / Miyazaki, Kenichi et al. | 2009
- 2571
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Optical transitions in AlGaAs/GaAs quantum wires on GaAs(631) substrates studied by photoreflectance spectroscopyCruz-Hernández, E. / Hernández-Rosas, J. / Rojas-Ramírez, J.S. et al. | 2010
- 2575
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Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitationKim, B.-J. / Tanikawa, T. / Honda, Y. et al. | 2010
- 2579
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Spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowiresMasumoto, Yasuaki / Goto, Ken / Pal, Bipul et al. | 2009
- 2583
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Retardation-effect-induced plasmon modes in a silica-core gold-shell nanocylinder pairLu, J.Y. / Chao, H.Y. / Wu, J.C. et al. | 2009
- 2588
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Gate adjustable coherent three and four level mixing in a vertical quantum dot moleculePayette, C. / Amaha, S. / Hatano, T. et al. | 2010
- 2592
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Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum wellKodera, Tetsuo / Ono, Keiji / Kumagai, Naoto et al. | 2010
- 2595
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Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixingShibata, K. / Jung, M. / Cha, K.M. et al. | 2009
- 2598
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A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDsMarquardt, Bastian / Geller, Martin / Lorke, Axel et al. | 2010
- 2602
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Importance of electronic state of two-dimensional electron gas for electron injection process in nano-electronic devicesMuraguchi, M. / Endoh, T. / Takada, Y. et al. | 2009
- 2606
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Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopyTanaka, Ichiro / Tada, Y. / Nakatani, S. et al. | 2009
- 2610
-
Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodesPolojärvi, V. / Schramm, A. / Aho, A. et al. | 2009
- 2614
-
Magnetoresistance oscillations in triple quantum wells under microwave irradiationWiedmann, S. / Mamani, N.C. / Gusev, G.M. et al. | 2009
- 2618
-
Efficient injection-type ballistic rectification in Si/SiGe cross junctionsSalloch, D. / Wieser, U. / Kunze, U. et al. | 2010
- 2622
-
Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structuresGranger, G. / Kam, A. / Studenikin, S.A. et al. | 2009
- 2628
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Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasersMátyás, Alpár / Kubis, Tillmann / Lugli, Paolo et al. | 2009
- 2632
-
Simulation of the interplay between stimulated emission and carrier distribution in quantum-cascade lasersSchrottke, L. / Giehler, M. / Wienold, M. et al. | 2009
- 2636
-
Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxyKoike, Kazuto / Kawaguchi, Ryou / Yano, Mitsuaki et al. | 2009
- 2640
-
Exciton transport by moving strain dots in GaAs quantum wellsLazić, S. / Santos, P.V. / Hey, R. et al. | 2009
- 2644
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Photoluminescence properties of exciton–exciton scattering in a GaAs/AlAs multiple quantum wellNakayama, M. / Hirao, T. / Hasegawa, T. et al. | 2009
- 2648
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Upconversion of photoluminescence due to subband resonances in a GaAs/AlAs multiple quantum well structureHasegawa, Takayuki / Okamoto, Satoshi / Nakayama, Masaaki et al. | 2009
- 2652
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Enhancement of optical gain in Li:CdZnO/ZnMgO quantum well lasersJeon, Hee Change / Lee, Seung Joo / Park, Seoung-Hwan et al. | 2009
- 2655
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Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlatticesKido, R. / Satake, A. / Fujiwara, K. et al. | 2009
- 2658
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Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wellsFujiwara, K. / Satake, A. / Takata, N. et al. | 2010
- 2661
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Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wellsGozu, Shin-ichiro / Mozume, Teruo / Ishikawa, Hiroshi et al. | 2010
- 2665
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Thermal escape process of photogenerated carriers from GaAs single-quantum-well contained in GaAs/AlAs superlatticesSatake, A. / Tanigawa, T. / Tanaka, Y. et al. | 2010
- 2669
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Terahertz radiation by spontaneous polarization fields in InNLin, K.I. / Tsai, J.T. / Hwang, J.S. et al. | 2009
- 2673
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In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contactsCiorga, M. / Einwanger, A. / Wurstbauer, U. et al. | 2010
- 2676
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Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictionsSchlapps, Markus / Geissler, Stefan / Lermer, Teresa et al. | 2009
- 2681
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Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin filmNishitani, Y. / Endo, M. / Matsukura, F. et al. | 2009
- 2685
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Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wiresKohda, M. / Ogawa, J. / Shiogai, J. et al. | 2009
- 2690
-
Optical manipulation of a single Mn spin in a CdTe quantum dotGoryca, M. / Kazimierczuk, T. / Nawrocki, M. et al. | 2009
- 2694
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Reducing influence of antiferromagnetic interactions on ferromagnetic properties of p-(Cd,Mn)Te quantum wellsSimserides, C. / Lipińska, A. / Trohidou, K.N. et al. | 2009
- 2698
-
Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum wellTakahashi, T. / Matsuzaka, S. / Ohno, Y. et al. | 2010
- 2702
-
Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopyMatsuzaka, S. / Ohno, Y. / Ohno, H. et al. | 2010
- 2707
-
Magnetic control of Rashba splittings in symmetric InAs quantum wellsMatsuura, Toru / Faniel, Sébastien / Monta, Nozomu et al. | 2010
- 2711
-
Controllable Dresselhaus field in microscopically inversion-symmetric quantum wellsMurata, Masahiko / Tsuchiya, Takuma et al. | 2009
- 2714
-
Transient grating studies of phase and spin relaxations of excitons in GaAs single quantum wellsTomoda, K. / Adachi, S. / Muto, S. et al. | 2009
- 2718
-
Effect of interface structure on current spin-polarization in narrow gap semiconductor heterostructuresSouma, Satofumi / Ogawa, Matsuto et al. | 2009
- 2722
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Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (111)Si substratePaek, J.H. / Nishiwaki, T. / Yamaguchi, M. et al. | 2010
- 2727
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Theoretical investigation on the structural stability of GaAs nanowires with two different types of facetsYamashita, Tomoki / Akiyama, Toru / Nakamura, Kohji et al. | 2010
- 2731
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Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrateIshimure, Naoki / Akiyama, Toru / Nakamura, Kohji et al. | 2010
- 2735
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Formation of InAs quantum dots at ultrahigh growth ratesAkahane, Kouichi / Yamamoto, Naokatsu et al. | 2010
- 2739
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Fabrication of metal/quantum dot/semiconductor structure on silicon substrateYamamoto, Naokatsu / Akahane, Kouichi et al. | 2010
- 2742
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Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxyKawazu, T. / Mano, T. / Noda, T. et al. | 2010
- 2745
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Growth of multi-stacked InAs/GaNAs quantum dots grown with As2 source in atomic hydrogen-assisted molecular beam epitaxyTakata, Ayami / Oshima, Ryuji / Shoji, Yasushi et al. | 2010
- 2749
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Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diodeMehta, Minisha / Reuter, Dirk / Melnikov, Alexander et al. | 2009
- 2753
-
Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush methodKumagai, N. / Ohkouchi, S. / Nakagawa, S. et al. | 2009
- 2757
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InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cellOshima, Ryuji / Takata, Ayami / Shoji, Yasushi et al. | 2009
- 2761
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Physics of novel site controlled InGaAs quantum dots on (111) oriented substratesHealy, S.B. / Young, R.J. / Mereni, L.O. et al. | 2009
- 2765
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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonicsBordel, Damien / Rajesh, Mohan / Nishioka, Masao et al. | 2009
- 2768
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The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrateShoji, Yasushi / Oshima, Ryuji / Takata, Ayami et al. | 2009
- 2772
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Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxyUmeno, K. / Furukawa, Y. / Urakami, N. et al. | 2009
- 2777
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Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt bright-field and dark-field TEMMishima, T.D. / Edirisooriya, M. / Santos, M.B. et al. | 2010
- 2781
-
Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrateYonezawa, Y. / Hiraike, R. / Miura, K. et al. | 2009
- 2784
-
A hierarchical research by large-scale and ab initio electronic structure theories—Si and Ge cleavage and stepped surfacesHoshi, T. / Tanikawa, M. / Ishii, A. et al. | 2009
- 2788
-
Ab initio-based approach to structural modulation on 4H-SiC(112¯0) during MBE growthIto, Tomonori / Ito, Takumi / Akiyama, Toru et al. | 2009
- 2792
-
Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbideKonishi, Keita / Yoh, Kanji et al. | 2010
- 2796
-
Band structures of Bernal graphene modulated by electric fieldsTsai, Sing-Jyun / Ho, Jon-Hsu / Chiu, Yu-Huang et al. | 2010
- 2799
-
Influence of the nitrogen content on the electrochemical capacitor characteristics of vertically aligned carbon nanotubesLee, Kuei-Yi / Lin, Yu-Sheng / Chen, Yi-Min et al. | 2010
- 2804
-
The modulation effects on Landau levels in graphene nanoribbonLiu, Y.H. / Wu, J.Y. / Chen, R.B. et al. | 2010
- 2808
-
Transport in armchair graphene nanoribbons modulated by magnetic barriersMyoung, Nojoon / Ihm, G. / Lee, S.J. et al. | 2009
- 2812
-
Electric-field-tunable electronic properties of graphene quantum dotsChen, R.B. / Chang, C.P. / Lin, M.F. et al. | 2009
- 2816
-
Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dotsKajimoto, Kaori / Uno, K. / Tanaka, Ichiro et al. | 2009
- 2820
-
Energy bands of atomic monolayers of various materials: Possibility of energy gap engineeringSuzuki, Tatsuo / Yokomizo, Yushi et al. | 2010
- 2826
-
Spectroscopic analysis of electromigration at gold nanojunctionsUmeno, A. / Hirakawa, K. et al. | 2009
- 2830
-
Charge transport through chains of nanoparticlesLüdtke, T. / Mirovsky, P. / Hüther, R. et al. | 2009
- 2834
-
Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor depositionTerai, Y. / Yamaoka, K. / Yoshida, K. et al. | 2010
- 2837
-
Proposal of a new physical model for Ohmic contactsTakada, Y. / Muraguchi, M. / Endoh, T. et al. | 2010
- 2841
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Surface state control of III–V semiconductors using molecular modificationYamada, Fumihiko / Shirasaka, Takeo / Fukui, Kosei et al. | 2010
- 2846
-
Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantationTerai, Y. / Tsuji, T. / Noda, K. et al. | 2009
- 2849
-
Tunable coupling of mechanical vibration in GaAs micro-resonatorsOkamoto, Hajime / Kamada, Takehito / Onomitsu, Koji et al. | 2009
- 2853
-
Noise induced amplification of sub-threshold pulses in multi-thread excitable semiconductor ‘neurons’Samardak, A. / Nogaret, A. / Janson, N.B. et al. | 2009
- 2857
-
Efficient photon detectors using surface acoustic wavesJiao, Shujie / Batista, Pablo D. / Biermann, Klaus et al. | 2009
- 2862
-
Hot carrier solar cells: Principles, materials and designKönig, D. / Casalenuovo, K. / Takeda, Y. et al. | 2009
- 2867
-
Photoabsorption-enhanced dye-sensitized solar cell by using localized surface plasmon of silver nanoparticles modified with polymerIhara, Manabu / Kanno, Masami / Inoue, Shiho et al. | 2010
- 2872
-
Detection of stress distribution using Ca2MgSi2O7:Eu,Dy microparticlesZhang, Hongwu / Xu, Chao-Nan / Terasaki, Nao et al. | 2010
- 2876
-
Electrical characterization of multilayered SiC nano-particles for application as tunnel barrier engineered non-volatile memoryLee, Dong Uk / Kim, Eun Kyu / Park, Goon-Ho et al. | 2009
- 2880
-
Patterned growth of ZnO nanorods and enzyme immobilization toward the fabrication of glucose sensorsOgata, K. / Dobashi, H. / Koike, K. et al. | 2010
- IFC
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Editorial Board| 2010
- iii
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14th International Conference on Modulated Semiconductor Structures| 2010
- iv
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EP2DS18/MSS14 Joint International Conference, Kobe, Japan, July 19–24, 2009| 2010
- v
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PrefaceOhno, Hideo / Woo, Jong-Chun / Yoshino, Junji et al. | 2010