APPLIED SURFACE SCIENCE
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Table of contents
- 1
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Ab initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductorsPollmann, J. / Krueger, P. / Rohlfing, M. et al. | 1996
- 17
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Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopyBell, G. R. / McConville, C. F. / Jones, T. S. et al. | 1996
- 24
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Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopyPolyakov, V. M. / Elbe, A. / Wu, J. et al. | 1996
- 35
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Kinematical RHEED simulation of different structure models for the GaAs (311)A surfaceBraun, W. / Brandt, O. / Wassermeier, M. et al. | 1996
- 45
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Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbideKaeckell, P. / Furthmueller, J. / Bechstedt, F. et al. | 1996
- 49
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Chemical preparation of CdTe(100) and (110) surfaces using atomic hydrogenLuo, Y. / Slater, D. A. / Levy, M. et al. | 1996
- 57
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Photoexcited carrier diffusion near a Si(111) surface and in the Si bulkLi, C. M. / Sjodin, T. / Ying, Z. C. et al. | 1996
- 61
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In-situ monitoring of surface chemistry and charge transfer at semiconductor surfacesFefer, E. / Kronik, L. / Leibovitch, M. et al. | 1996
- 68
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Electronic structure of the valence band of GdS~x and Gd~3S~4Grazhulis, V. A. / Bozhko, S. I. / Bolotin, I. L. et al. | 1996
- 73
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Sb or Cs covered InAs(110) surfaces: moving E~F into conduction band and quantized 2D electron channelAristov, V. Y. / Grehk, M. / Zhilin, V. M. et al. | 1996
- 79
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Synchrotron radiation study of Cs/carbon-rich -SiC(100) and Cs/silicon-rich -SiC(100) surfaces: metallization and interface formationSemond, F. / Soukiassian, P. / Mangat, P. S. et al. | 1996
- 88
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Surface core-level shift photoelectron diffraction from As/Si(111)Johansson, L. S. O. / Gunnella, R. / Bullock, E. L. et al. | 1996
- 95
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Fluorine adsorption on GaAs(110) surfaces and the onset of etching after XeF~2 exposuresNienhaus, H. / Moench, W. et al. | 1996
- 101
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An ARUPS/NEXAFS study of the H~2S/InP(110) adsorbate systemDudzik, E. / Leslie, A. / O'Toole, E. et al. | 1996
- 107
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Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state densityAngermann, H. / Kliefoth, K. / Flietner, H. et al. | 1996
- 113
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Ge(111)3 x 1:K/Sn; on the influence of tin substitution in a metal induced 3 x 1 reconstructionGoethelid, M. / Odasso, S. / LeLay, G. et al. | 1996
- 118
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Si(110)16 x 2 and Si(110)2 x 3-Sb surfaces studied by photoemission and optical spectroscopyCricenti, A. / Perfetti, P. / Nesterenko, B. et al. | 1996
- 124
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The atomic structure of the Si(111) (23 x 23)R30-Sn reconstructionLevermann, A. H. / Howes, P. B. / Edwards, K. A. et al. | 1996
- 130
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Atomic phenomena on Si surfaces at adsorption of transition metalsOlshanetsky, B. Z. et al. | 1996
- 137
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Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopyRossow, U. / Mantese, L. / Yasuda, T. et al. | 1996
- 141
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Se-induced 3d core-level shifts of GaAs(110)Kaeckell, P. / Schmidt, W. G. / Bechstedt, F. et al. | 1996
- 147
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Optical study of potassium growth on the Si(100) surfaceRoy, M. / Borensztein, Y. et al. | 1996
- 152
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A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)Burgess, S. R. / Cowie, B. C. C. / Wilks, S. P. et al. | 1996
- 158
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Optical spectroscopy study of hydrogenation of the Si(111)-7 x 7 surfaceRoy, M. / Beitia, C. / Borensztein, Y. et al. | 1996
- 163
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Dissolution and segregation of monolayer Cu, Ni and Co atoms on the Si(111)- 3 x 3 - Ag surface induced by thermal annealingYuhara, J. / Ishigami, R. / Ishikawa, D. et al. | 1996
- 169
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Segregation of In atoms at clean and hydrogen passivated InP(100) surfacesStietz, F. / Allinger, T. / Polyakov, V. et al. | 1996
- 176
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Electronic properties of antimony monolayers on III-V (110) surfaces: a comparative study by reflectance anisotropy spectroscopy and microscopic tight-binding calculationsShkrebtii, A. I. / Esser, N. / Koepp, M. et al. | 1996
- 183
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Schottky-barrier formation at passivated surfaces: covalent and ionic semiconductorsSaiz-Pardo, R. / Rincon, R. / De Andres, P. L. et al. | 1996
- 188
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Midgap states observed by nonlinear optical spectroscopy of metal:GaAs junctionsQi, J. / Angerer, W. / Yeganeh, M. S. et al. | 1996
- 196
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Spatially resolved internal and external photoemission of Pt/n-GaP Schottky barrierColuzza, C. / Almeida, J. / Dell'Orto, T. et al. | 1996
- 204
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Structural properties of epitaxial silicide layers on SiVon Kaenel, H. / Mueller, E. / Goncalves-Conto, S. et al. | 1996
- 213
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Atomistic study of the formation process of Ni silicide on the Si(111)-7 x 7 surface with scanning tunneling microscopyYao, T. / Shinabe, S. / Yoshimura, M. et al. | 1996
- 218
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Analytical studies of nickel silicide formation through a thin Ti layerFenske, F. / Schoepke, A. / Schulze, S. et al. | 1996
- 223
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Scanning tunneling spectroscopy examination of surface electronic structures of Si(111)(23 x 23)30-Sn surfaceLin, X. F. / Chizhov, I. / Mai, H. A. et al. | 1996
- 228
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Unpinned behavior of the Fermi level and photovoltage on p-(100)GaAs surface facilitated by deposition of cesiumAlperovich, V. L. / Paulish, A. G. / Scheibler, H. E. et al. | 1996
- 234
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Development of the Na/GaAs(111)A-(2 x 2) interface at room and low temperatureThornton, J. M. C. / Weightman, P. / Bailey, P. et al. | 1996
- 240
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Metal overlayers on the MBE-grown ZnSe(001) surfaceEvans, D. A. / Wolfframm, D. / Gnoth, D. et al. | 1996
- 248
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Metal-insulator transition for K on GaAs(100)-As rich surfacesYeyati, A. L. / Martin-Rodero, A. / Flores, F. et al. | 1996
- 253
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Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantationKoyama, M. / Akita, Y. / Cheong, C. et al. | 1996
- 257
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A normal incidence X-ray standing wave study of sulphur adsorption on InP(110)Johal, T. K. / Finetti, P. / Dhanak, V. R. et al. | 1996
- 262
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The Schottky barrier of Co on strained and unstrained Si~xGe~1~-~x alloysKu, J.-H. / Nemanich, R. J. et al. | 1996
- 267
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Characterization of cobalt-diamond (100) interfaces: electron affinity and Schottky barrierBaumann, P. K. / Nemanich, R. J. et al. | 1996
- 274
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Hot-electron scattering at Au/Si(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopyVentrice, C. A. / LaBella, V. P. / Ramaswamy, G. et al. | 1996
- 282
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Valence band of Cd~1~-~xFe~xSe/Fe in resonant photoemission spectraOrlowski, B. A. / Kowalski, B. J. / Barrett, N. et al. | 1996
- 286
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Intrinsic surface atom manipulations in STM and AFMCho, K. / Joannopoulos, J. D. et al. | 1996
- 291
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Surface diffusion limitation in laser focused atomic depositionBehringer, R. E. / Natarajan, V. / Timp, G. et al. | 1996
- 297
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Graphitization of diamond (111) studied by first principles molecular dynamicsDe Vita, A. / Galli, G. / Canning, A. et al. | 1996
- 304
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A comparative study of the adsorption and thermal decomposition of triethylgallium and trimethylgallium at GaAs(100) surfaces studied by electron energy loss spectroscopyAquino, A. A. / Jones, T. S. et al. | 1996
- 312
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Smoothing of crystal surfaces during growth interruptionKaminski, A. Y. / Suris, R. A. et al. | 1996
- 317
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Comparison of structurally relaxed models of the Si(001)-SiO~2 interface based on different crystalline oxide formsPasquarello, A. / Hybertsen, M. S. / Car, R. et al. | 1996
- 323
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Initial stage of oxidation of hydrogen-terminated silicon surfacesHattori, T. / Aiba, T. / Iijima, E. et al. | 1996
- 329
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The initial oxidation of silicon: new ion scattering results in the ultra-thin regimeGusev, E. P. / Lu, H. C. / Gustafsson, T. et al. | 1996
- 335
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Local atomic structure and electrical properties of nitrided Si-SiO~2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculationsLucovsky, G. / Lee, D. R. / Hattangady, S. V. et al. | 1996
- 342
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Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defectsFlietner, H. / Fuessel, W. / Sinh, N. D. et al. | 1996
- 349
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Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO~2 thin filmsDe Padova, P. / Larciprete, R. / Ottaviani, C. et al. | 1996
- 354
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Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfacesIkeda, H. / Hotta, K. / Furuta, S. et al. | 1996
- 359
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Effect of chemical preoxidation treatment on the structure of SiO~2/Si interfacesNohira, H. / Sekikawa, H. / Matsuda, M. et al. | 1996
- 364
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Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobeKoh, M. / Horita, K. / Shigeta, B. et al. | 1996
- 369
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Weak fluence dependence of charge generation in ultra-thin oxides on siliconFarmer, K. R. / Debauche, C. P. / Giordano, A. R. et al. | 1996
- 373
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Studies on low temperature silicon grain growth on SiO~2 by electron cyclotron resonance chemical vapor depositionWang, K. C. / Hwang, H. L. / Loferski, J. J. et al. | 1996
- 379
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Characterization of nitrided SiO~2 thin films using secondary ion mass spectrometryFrost, M. R. / Magee, C. W. et al. | 1996
- 385
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Plasma assisted oxidation of SiGe layers at 500C: interface characterizationTetelin, C. / Wallart, X. / Vescan, L. et al. | 1996
- 392
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Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF~2 adlayers on Si(111)Wollschlaeger, J. / Meier, A. et al. | 1996
- 402
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Structural transformations at CaF~2/Si(111) interfacesSokolov, N. S. / Alvarez, J. C. / Shusterman, Y. V. et al. | 1996
- 409
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Molecular beam epitaxial growth of thin CaF~2 films on vicinal Si(111) surfacesKim, B. M. / Ventrice, C. A. / Mercer, T. et al. | 1996
- 417
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Growth of CdF~2/CaF~2Si(111) heterostructure with abrupt interfaces by using thin CaF~2 buffer layerIzumi, A. / Kawabata, K. / Tsutsui, K. et al. | 1996
- 422
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Hydrogen ion treatments of oxidized GaAs(100) and AlGaAs(100) surfaces: surface stoichiometry and electronic propertiesChang, Y.-L. / Yi, S. I. / Shi, S. et al. | 1996
- 428
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Interface properties of PN~x/InP structures by in-situ remote plasma processesSugino, T. / Sakamoto, Y. / Miyazaki, T. et al. | 1996
- 434
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Sulfur passivated InP(100): surface gaps and electron countingMitchell, C. E. J. / Hill, I. G. / McLean, A. B. et al. | 1996
- 441
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GaAs surface passivation using in-situ oxide depositionPasslack, M. / Hong, M. / Opila, R. L. et al. | 1996
- 448
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Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxyVenkatasubramanian, R. / Pamula, V. K. / Dorsey, D. L. et al. | 1996
- 455
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UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiCBenjamin, M. C. / Bremser, M. D. / Weeks, T. W. et al. | 1996
- 461
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Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxyYang, H. / Brandt, O. / Trampert, A. et al. | 1996
- 468
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Nitridation of GaAs surfaces stimulated by nitrogen glow dischargeXu, Q. J. / Ding, X. M. / Hou, X. Y. et al. | 1996
- 472
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Growth and characterization of ZnSe/GaAs single quantum well structuresHouse, J. L. / Dougherty, D. J. / Petrich, G. S. et al. | 1996
- 479
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Photomodulation Raman scattering spectroscopy of ZnSe/GaAs heterostructure interfaceTalaat, H. / Elissa, L. / Negm, S. et al. | 1996
- 485
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Raman monitoring of selenium decapping and subsequent antimony deposition on MBE-grown ZnSe(100)Drews, D. / Schneider, A. / Zahn, D. R. T. et al. | 1996
- 490
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Heterocrystalline SiC: ab initio calculations for the interface structure of combinations of cubic and hexagonal SiCKaeckell, P. / Bechstedt, F. et al. | 1996
- 495
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Highly mismatched heteroepitaxy: 2D platelets assisted nucleation of self-assembled 3D quantum dotsPriester, C. / Lannoo, M. et al. | 1996
- 502
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Photoluminescence and transmission electron microscopy investigation of SiGe quantum wires grown on patterned Si substratesHartmann, A. / Dieker, C. / Bangert, U. et al. | 1996
- 510
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AFM and RHEED study of Ge islanding on Si(111) and Si(100)Deelman, P. W. / Thundat, T. / Schowalter, L. J. et al. | 1996
- 516
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Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopyPfister, M. / Johnson, M. B. / Alvarado, S. F. et al. | 1996
- 522
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Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopyLew, A. Y. / Yan, C. H. / Tu, C. W. et al. | 1996
- 529
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Atomic force microscopy of III-V nanostructures in airReinhardt, F. / Dwir, B. / Biasiol, G. et al. | 1996
- 539
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Site occupation of Si atoms deposited on vicinal GaAs(001)-(2 x 4) surfacesAvery, A. R. / Sudijono, J. L. / Jones, T. S. et al. | 1996
- 546
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Characterization of nanostructures by virtue of the phenomena due to the electron-phonon interactionPokatilov, E. P. / Fomin, V. M. / Klimin, S. N. et al. | 1996
- 552
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Porous silicon layers as a model system for nanostructuresRossow, U. / Frotscher, U. / Pietryga, C. et al. | 1996
- 557
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Influence of surface reconstruction on MBE growth of layered GaSe on Si(111) substratesReqqass, H. / Lacharme, J.-P. / Eddrief, M. et al. | 1996
- 563
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Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layersMori, M. / Li, D. M. / Yamazaki, M. et al. | 1996
- 570
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Ga-Se films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSeIzumi, T. / Nishiwaki, H. / Tambo, T. et al. | 1996
- 575
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MOCVD growth of Ga~2Se~3 on GaAs(100) and GAP(100): a Raman studyVon der Emde, M. / Zahn, D. R. T. / Ng, T. et al. | 1996
- 580
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Temperature dependence of interdiffusion-induced III-V compound formation at the interface between Al, Ga, In layers and Sb substratesWagner, V. / Richter, W. / Geurts, J. et al. | 1996
- 586
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STM study of the organic semiconductor PTCDA on highly-oriented pyrolytic graphiteKendrick, C. / Kahn, A. / Forrest, S. R. et al. | 1996
- 595
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Low-energy yield spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructureDi Gaspare, L. / Capellini, G. / Chudoba, C. et al. | 1996
- 601
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Ultra-thin AlAs films on GaAs (001) investigated by high-resolution electron-energy-loss spectroscopyGuyaux, J.-L. / Lambin, P. / Lange, M. D. et al. | 1996
- 608
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Band structure evolution in InAs overlayers on GaAs(110)He, Z. Q. / Ilver, L. / Kanski, J. et al. | 1996
- 615
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Measurements of the energy band offsets of Si~1~-~xGe/Si and Ge~1~-~yC~y/Ge heterojunctionsChen, F. / Waite, M. M. / Ismat Shah, S. et al. | 1996
- 621
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The conduction barrier at the interface between low temperature grown GaAs and undoped GaAsMaranowski, K. D. / Ibbetson, J. P. / Campman, K. L. et al. | 1996
- 626
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(II-VI)~m/(IV~2)~n (110) superlattice: interfacial chemistry, electronic structure, and optical propertyWang, E. G. et al. | 1996
- 631
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Charge transfer and electronic activation at an Sb -layer in Si(001)Thornton, J. M. C. / Cole, R. J. / Gravesteijn, D. J. et al. | 1996
- 637
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A scanning tunnelling microscopy study of local surface modifications induced by misfit dislocation formation in strained-layer heteroepitaxySpringholz, G. / Bauer, G. et al. | 1996
- 646
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Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayersSauvage-Simkin, M. / Garreau, Y. / Pinchaux, R. et al. | 1996
- 652
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Interface abruptness in strained III-V heterostructuresBruni, M. R. / Kaciulis, S. / Mattogno, G. et al. | 1996
- 656
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Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAsTit, N. / Peressi, M. et al. | 1996
- 661
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Medium energy ion scattering (MEIS) studies on Si/GaSb/Si- and Si/CaF~2/Si(111) layer systemsTappe, T. / Chatziparaskewas, A. / Schaeffer, J. et al. | 1996
- 669
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Clustering on surfaces at finite areal coveragesBarel, R. / Mai, Y. / Carlow, G. R. et al. | 1996
- 679
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Preparation and properties of thin polycrystalline MnSi~1~.~7~3 filmsTeichert, S. / Kilper, R. / Erben, J. et al. | 1996
- 685
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A summary and perspective on the Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton, NJLueth, H. et al. | 1996