Physica B: Condensed Matter
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
Table of contents
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Electronic interactions between quantum dotsKotthaus, J.P. et al. | 1996
- 6
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Electronic excitations in quantum wires and dotsAbstreiter, G. et al. | 1996
- 11
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Quantitative analysis of elastic strains in GaAs-AlAs quantum dotsDarhuber, A. et al. | 1996
- 17
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Multiple quantum-dot infrared phototransistorsRyzhii, V. et al. | 1996
- 21
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Effects of disorder and electron-electron interactions on orbital magnetism in quantum dotsTamura, H. et al. | 1996
- 24
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Temperature-dependent magnetotransport properties for systems of few quantum wiresPloner, G. et al. | 1996
- 31
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Tunnelling and transfer between 1D and 2D electrons in adjusted quantum wells with thin barrierFriedland, K.-J. et al. | 1996
- 31
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Tunnelling and transfer between ID and 2D electrons in adjusted quantum wells with thin barrierFriedland, K.-J. / Hirayama, Y. / Fujisawa, T. et al. | 1996
- 34
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Mobility enhanced 1DEG electron transport in side gated quantum wire structuresWirner, C. et al. | 1996
- 38
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Magnetic field effects in p-type modulation-doped GaAs quantum wiresNomura, S. et al. | 1996
- 42
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Quantum transport in a Schottky in-plane-gate controlled GaAs-AlGaAs quantum well wiresHashizume, T. et al. | 1996
- 46
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Self-consistent results in quantum wires in magnetic fields: Temperature effectsSuzuki, T. et al. | 1996
- 50
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Mesoscopic transport properties of in-plane gate defined quantum wiresPivin Jr, D.P. et al. | 1996
- 54
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Conductance fluctuations in quantum wire systems: A comparison between different scattering modelsGrincwajg, A. et al. | 1996
- 57
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Scattering reduction due to electron wave interference by periodic doping of impurity ions in semiconductorsKikegawa, N. et al. | 1996
- 61
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Effect of donor layer ordering on the formation of single mode quantum wiresStopa, M. et al. | 1996
- 65
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Analysis of valence-subband structures in a quantum wire with an arbitrary cross-sectionOgawa, M. et al. | 1996
- 69
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Ballistic transport in the upper subband of a two-dimensional electron systemLu, J.P. et al. | 1996
- 74
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Spatial and energy distributions of single-carrier traps in GaAs-AlxGa1-x As heterostructuresSakamoto, T. et al. | 1996
- 77
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Photoluminescence from point contact structures -- Direct observation of electron flowNagamune, Y. et al. | 1996
- 82
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Single-electron transistors with quantum dotsHaug, R.J. et al. | 1996
- 87
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Single-electron transport in nanostructure systemsBarker, J.R. et al. | 1996
- 92
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Room temperature operated single electron transistor made by STM-AFM nano-oxidation processMatsumoto, K. et al. | 1996
- 95
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Characterization of precisely width-controlled Si quantum wires fabricated on SOI substratesHiramoto, T. et al. | 1996
- 98
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Microwave modulation of Coulomb-blockade oscillations in a quantum dotFujii, K. et al. | 1996
- 102
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Dependence of Coulomb blockade in ultrasmall single tunnel junctions on tunnel resistanceShimazu, Y. et al. | 1996
- 105
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Co-tunneling current in very small Si single-electron transistorsTakahashi, Y. et al. | 1996
- 109
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Observation of single electron effects using HEMTFutatsugi, T. et al. | 1996
- 112
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Design and fabrication of GaAs-AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEGTomozawa, H. et al. | 1996
- 116
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Suppression of current noise due to the Coulomb correlationYamaguchi, F. et al. | 1996
- 119
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Coherence and phase sensitive measurements with a quantum dotHeiblum, M. et al. | 1996
- 122
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Magnetotransport in modulated and magnetic fieldsIye, Y. et al. | 1996
- 127
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AAS oscillations in antidot latticesNakanishi, T. et al. | 1996
- 131
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Two-dimensional electrons in modulated magnetic fieldsPeeters, F.M. et al. | 1996
- 138
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Analysis of antidot lattices with periodic orbit theoryUryu, S. et al. | 1996
- 141
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Mechanism of commensurability oscillations in anisotropic antidot latticeTsukagoshi, K. et al. | 1996
- 144
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Classical and wave-mechanical aspects of magneto-transport fluctuations in ballistic quantum dotsEdwards, G. et al. | 1996
- 148
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Transition from chaotic to regular quantum scattering in mesoscopic billiards with nominally regular geometryBird, J.P. et al. | 1996
- 152
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Experimental evidence for boundary and impurity scattering related crossover in quasi-ballistic wiresOchiai, Y. et al. | 1996
- 156
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Mesoscopic noise: Common sense viewLandauer, R. et al. | 1996
- 161
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Measurement of reduced shot noise in a quantum point contactKumar, A. et al. | 1996
- 164
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Composite Fermions: Their scattering and their spinStormer, H.L. et al. | 1996
- 170
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Temperature dependence of the bend resistance of composite fermions in narrow cross junctionsHerfort, J. et al. | 1996
- 173
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Quantum Hall effect from finite-frequency studiesEngel, L.W. et al. | 1996
- 180
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Observation of universal exponent in a high mobility two-dimensional electron system in the integer quantum Hall effectHwang, S.W. et al. | 1996
- 183
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Nonlocal nature of the breakdown of the integer quantum Hall effectsKawaguchi, Y. et al. | 1996
- 186
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Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effectHaren, R.J.F.van et al. | 1996
- 189
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Bulk conductivity at quantum Hall plateaux by magnetocapacitance measurementOto, K. et al. | 1996
- 192
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Distribution of 'scarred' eigenfunctions in a quantum well with chaotic classical dynamics probed by resonant tunnellingWilkinson, P.B. et al. | 1996
- 197
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Nonequilibrium random telegraph switching in quantum point contactsSmith, J.C. et al. | 1996
- 202
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Supply-function dependent sequential resonant tunneling in semiconductor multiple quantum well diodesHirakawa, K. et al. | 1996
- 206
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Stark-ladder transition in a (GaAs)5-(AlAs)2 Zener tunneling diodeNagasawa, H. et al. | 1996
- 210
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Undoped spacer layer effects on the evaluation of the coherent length in GaInAs-InP resonant tunneling diodesKang, Y.C. et al. | 1996
- 213
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Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)-insulator (CaF2) quantum interference transistor structureMori, K. et al. | 1996
- 216
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Theoretical base current in metal-insulator resonant tunneling transistors based on electron wave scattered by base port structureKohno, Y. et al. | 1996
- 220
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Quantum effects in mesoscopic systems of metallic tunnel junctionsMooij, J.E. et al. | 1996
- 224
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Andreev reflection and quantum transport in an S-N-S junctionTakayanagi, H. et al. | 1996
- 229
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Superconducting phase tuned sample-specific conductance fluctuationsHartog, S.G.den et al. | 1996
- 232
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Capacitance dependence of critical tunneling resistance for superconductor-insulator transition in two-dimensional network of Josephson junctionsYagi, R. et al. | 1996
- 235
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Transport properties of superconducting SET transistor with a loopKanda, A. et al. | 1996
- 238
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Effect of self-capacitance on charge Kosterlitz-Thouless transition in two-dimensional arrays of small tunnel junctionsKanda, A. et al. | 1996
- 241
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Noise and adiabatic dynamics of superconducting quantum point contactsAverin, D. et al. | 1996
- 245
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Coulomb blockade and incoherent Cooper pair tunneling in ultrasmall Josephson double junctions with external circuitsIwabuchi, S. et al. | 1996
- 249
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Temperature dependence of conductivity in multi-subband quantum wiresKawabata, A. et al. | 1996
- 252
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Quantized conductance in a mesoscopic Tomonaga-Luttinger liquidOgata, M. et al. | 1996
- 256
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AC-conductance of one-dimensional, long-range correlated electronsCuniberti, G. et al. | 1996
- 259
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Single atom scale lithography for single electron devicesAhmed, H. et al. | 1996
- 264
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GaAs AlGaAs device fabrication using MBE growth and in situ focused ion beam lithographyJones, G.A.C. et al. | 1996
- 268
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Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structuresWakaya, F. et al. | 1996
- 271
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Fabrication of mesoscopic structures on n-GaAs surfaces by electrochemical scanning electron microscopeKaneshiro, C. et al. | 1996
- 276
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Nanofabrication with a metal-covered scanning tunneling microscope tipAndoh, H. et al. | 1996
- 279
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AFM fabrication of metal-oxide devices with in situ control of electrical propertiesSnow, E.S. et al. | 1996
- 282
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Possibility of hot electron detection with a scanning probe microscopeVázquez, F. et al. | 1996
- 287
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Advanced self-organized epitaxy for GaAs quantum wire arraysMiyao, M. et al. | 1996
- 291
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Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBENakashima, H. et al. | 1996
- 295
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Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfacesMotohisa, J. et al. | 1996
- 299
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The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBEChun, Y.J. et al. | 1996
- 303
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Site control of metal dot structures on fluoride surface by electron beam exposureTsutsui, K. et al. | 1996
- 307
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A new fabrication method of ultra small tunnel junctionsOotuka, Y. et al. | 1996
- 310
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Electron transport in the quantum Hall regime in strained Si-SiGeIsmail, K. et al. | 1996
- 315
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AFM-based fabrication of Si nanostructuresCampbell, P.M. et al. | 1996
- 318
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The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabricationKozicki, M.N. et al. | 1996
- 323
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Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxyKoinuma, H. et al. | 1996
- 326
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A novel fabrication method of Si mesoscopic structures on Al 2)O3 by selective epitaxial growth using electron beam irradiationYanagiya, S. et al. | 1996
- 330
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Guided modes in an arbitrarily oriented Si-quantum wire and their controlOkawa, Y. et al. | 1996
- 333
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Quantum transport calculations for silicon inversion layers in MOS structuresVasileska, D. et al. | 1996
- 336
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Validity of effective mass theory for energy levels in Si quantum wiresHoriguchi, S. et al. | 1996
- 339
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Theory of tunneling conductance of CDW junctionsTanaka, Y. et al. | 1996
- 342
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Carbon nanotubes: Effects of magnetic fields on lattice distortionsAjiki, H. et al. | 1996
- 346
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Optical properties of a quantum wire crystal, C5H 10)NH2PbI3Nagami, A. et al. | 1996
- 349
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Study of cyclotron resonance in very high magnetic fields and nonparabolic energy band in InGaAs-InAlAs quantum wellsKotera, N. et al. | 1996
- 352
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Magneto-photoluminescence spectra of excitons in GaP-AlP short period superlattices in high magnetic fieldsUchida, K. et al. | 1996
- 356
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Angular dependent cyclotron resonance in short period (GaAs) n)-(AlAs)n superlatticesYamanaka, K. et al. | 1996
- 360
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Conductance fluctuations in PbTe wide parabolic quantum wellsOswald, J. et al. | 1996
- 363
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High field transport properties of InAs-AlGaSb quantum wiresSasa, S. et al. | 1996
- 367
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Photon assisted transport through semiconductor quantum structures in intense terahertz electric fieldsAllen, S.J. et al. | 1996
- 373
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Electron-phonon interaction and the so-called phonon bottleneck effect in semiconductor quantum dotsInoshita, T. et al. | 1996
- 378
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Magneto-optical properties of InAs monolayers and InyAl 1-y) As self-assembled quantum dots in Ga(Al)As matricesWang, P.D. et al. | 1996
- 384
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Resonance of electronic states and indirect excitons in an asymmetric triple quantum well structureSawaki, N. et al. | 1996
- 387
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Tunneling and interference of electronic states in double quantum wellYamaguchi, M. et al. | 1996
- 390
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Exciton binding and delocalization in T-shaped quantum wiresBryant, G.W. et al. | 1996
- 393
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Light emission of quantum-well-exciton polaritons in single quantum wellsKatayama, S. et al. | 1996
- 397
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Physical properties of few electron mesoscopic rings: Persistent currents, optical absorption and Raman scatteringWendler, L. et al. | 1996
- 400
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Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasersMukaihara, T. et al. | 1996
- 404
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Light emission from vertical-microcavity quantum dot laser structuresNishioka, M. et al. | 1996
- 407
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Quantum mechanical description of spontaneous emission in a microcavity in terms of admittanceTakahashi, I. et al. | 1996
- 411
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Spatially ununiform gain in MQW lasers caused by nonequilibrium carrier transportTsuchiya, H. et al. | 1996
- 415
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Nanofabrication of GaInAsP-InP 2-dimensional photonic crystals by a methane-based reactive ion beam etchingBaba, T. et al. | 1996
- 419
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Author Index| 1996
- 427
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Subject Index| 1996
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Symposium Photograph| 1996
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Contents| 1996
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Opening Address| 1996
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Preface| 1996